Classification method, device, equipment and medium for radiation damage of optoelectronic imaging devices

Abstract

The present disclosure provides a classification method for radiation damage of a photoelectric imaging device, which is applied to the field of image sensor detection technology, including: obtaining dark current data of dark field image pixels collected by the photoelectric imaging device at different annealing times, performing spline interpolation on the dark current data of pixels that meet preset conditions to obtain a spline interpolation result, taking the Chebyshev zero point of the spline interpolation result, performing Lagrange interpolation on the Chebyshev zero point to obtain a polynomial result of dark current evolution and plotting the polynomial result of dark current evolution into a dark current evolution curve in a preset coordinate system, for every two different pixels, respectively plotting the dark current evolution curve of every two different pixels in the preset coordinate system to obtain a curve plotting result, and obtaining a pixel-level classification result of radiation damage of the photoelectric imaging device based on the curve plotting result. The present disclosure also provides a classification device, electronic device and storage medium for radiation damage of a photoelectric imaging device.

Description

Technical Field

[0001] The present disclosure relates to the field of image sensor detection technology, and in particular to a classification method, device, electronic device, and storage medium for radiation damage of a photoelectric imaging device. Background Art

[0002] As part of a spacecraft's payload, space optoelectronic imaging systems are inevitably exposed to the space radiation environment during their missions. High-energy particles (protons, electrons, and heavy ions) in space induce various radiation effects, including total ionizing dose effects, displacement damage effects, and single-event effects. Radiation-induced damage can degrade the performance of optoelectronic imaging devices, impacting the proper functioning of related functions. Therefore, it is necessary to study radiation damage to optoelectronic imaging devices, understand the impact of different types of radiation damage, their annealing behavior, and explore corresponding reinforcement measures to provide technical support for the long-term, reliable operation of spacecraft.

[0003] Researchers at home and abroad have already gained a certain understanding of the radiation effects on optoelectronic imaging devices. However, due to the randomness and complexity of radiation damage, researchers have not yet reached a consensus on some issues, and many physical processes remain unclear. Furthermore, existing experimental data often focuses on the overall statistical results of all pixels, while theoretical analysis focuses on the specific conditions of individual pixels. There is a lack of a reliable connection between the two, and related methods still have room for improvement. Summary of the Invention

[0004] The main purpose of the present disclosure is to provide a method, device, electronic device and storage medium for classifying radiation damage of optoelectronic imaging devices, aiming to solve the technical problem of inaccurate classification of radiation damage of optoelectronic imaging devices in the prior art.

[0005] To achieve the above objectives, the first aspect of the present disclosure provides a method for classifying radiation damage of an optoelectronic imaging device, comprising:

[0006] Obtaining dark current data of dark field image pixels collected by the optoelectronic imaging device at different annealing times;

[0007] Performing spline interpolation on the dark current data of pixels that meet preset conditions to obtain a spline interpolation result;

[0008] Taking Chebyshev zero points for the spline interpolation result;

[0009] Performing Lagrange interpolation on the Chebyshev zeros to obtain a polynomial result of dark current evolution and plotting the polynomial result of dark current evolution into a dark current evolution curve in a preset coordinate system;

[0010] For every two different pixels, respectively plotting the dark current evolution curves of the every two different pixels in the preset coordinate system to obtain a curve plotting result;

[0011] According to the curve drawing result, a pixel-level classification result of the radiation damage of the optoelectronic imaging device is obtained.

[0012] Optionally, obtaining dark current data of dark field image pixels collected by the optoelectronic imaging device at different annealing times includes:

[0013] Under the different annealing times, performing dark field image acquisition on the irradiated optoelectronic imaging device to obtain a plurality of dark field images;

[0014] Calculate the average grayscale value of each pixel in the dark field image at different integration times;

[0015] The integration time is used as an independent variable and the average grayscale value is used as a dependent variable to calculate the slope of a curve, where the slope of the curve is the dark current corresponding to each pixel.

[0016] Optionally, for every two different pixels, respectively plotting the dark current evolution curves of the every two different pixels in the preset coordinate system to obtain the curve plotting result includes:

[0017] Plotting dark current evolution curves of a target pixel and all other pixels in the coordinate system, wherein the other pixels are pixels other than the target pixel;

[0018] For each dark current evolution curve of the target pixel and another pixel, calculating the standard deviation of the vertical coordinate differences corresponding to different horizontal coordinates;

[0019] The two dark current evolution curves with the smallest standard deviation are classified into one category to obtain a classification result of the target pixel.

[0020] Optionally, obtaining a pixel-level classification result of radiation damage of the optoelectronic imaging device according to the curve drawing result includes:

[0021] The intersection of the classification results of all the target pixels is taken to obtain a pixel-level classification result of the radiation damage of the optoelectronic imaging device.

[0022] Optionally, performing dark field image acquisition on the irradiated optoelectronic imaging device includes:

[0023] At each integration time, at least twenty dark field images are collected from the irradiated photoelectric imager.

[0024] A second aspect of the present disclosure provides a pixel-level classification device for radiation damage of an optoelectronic imaging device, comprising:

[0025] An acquisition module, used to acquire dark current data of dark field image pixels collected by the optoelectronic imaging device at different annealing times;

[0026] A first interpolation module is used to perform spline interpolation on the dark current data of pixels that meet preset conditions to obtain a spline interpolation result;

[0027] A value obtaining module, configured to obtain Chebyshev zero points for the spline interpolation result;

[0028] a second interpolation module, configured to perform Lagrange interpolation on the Chebyshev zeros to obtain a polynomial result of dark current evolution and plot the polynomial result of dark current evolution into a dark current evolution curve in a preset coordinate system;

[0029] a curve drawing module, configured to draw, for each two different pixels, dark current evolution curves of the two different pixels in the preset coordinate system to obtain a curve drawing result;

[0030] A classification module is used to obtain a pixel-level classification result of the radiation damage of the optoelectronic imaging device according to the curve drawing result.

[0031] Optionally, the acquisition module includes:

[0032] an acquisition module, configured to acquire dark field images of the irradiated photoelectric imaging device at different annealing times to obtain a plurality of dark field images;

[0033] A grayscale value calculation module is used to calculate the average grayscale value of each pixel in the dark field image at different integration times;

[0034] The slope calculation module is used to calculate the slope of a curve using the integration time as an independent variable and the average grayscale value as a dependent variable, where the slope of the curve is the dark current corresponding to each pixel.

[0035] Optionally, the curve drawing module includes:

[0036] a drawing module, configured to draw dark current evolution curves of a target pixel and all other pixels in the coordinate system, wherein the other pixels are pixels other than the target pixel;

[0037] a calculation module, configured to calculate, for each dark current evolution curve of the target pixel and another pixel, a standard deviation of a vertical coordinate difference corresponding to different horizontal coordinates;

[0038] The classification module is used to classify the two dark current evolution curves with the smallest standard deviation into one category to obtain a classification result of the target pixel.

[0039] A third aspect of the present disclosure provides an electronic device, including:

[0040] A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the method for classifying radiation damage to a photoelectric imaging device provided in the first aspect of the embodiment of the present disclosure is implemented.

[0041] A fourth aspect of an embodiment of the present disclosure provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the method for classifying radiation damage to a photoelectric imaging device provided in the first aspect of an embodiment of the present disclosure is implemented.

[0042] From the above-mentioned embodiments of the present disclosure, it can be seen that the classification method, device, electronic device and storage medium for radiation damage of optoelectronic imaging devices provided by the present disclosure establish a reliable connection between experimental data of radiation effect research of optoelectronic imaging devices and theoretical analysis. Based on the differences in annealing behaviors of different radiation damages, dark field images under different annealing conditions are collected through optoelectronic imaging devices, the dark current of the optoelectronic imaging device under the corresponding conditions is calculated, and the dark current evolution of each pixel during the annealing process is obtained. Spline interpolation is performed on the dark current annealing data points of each pixel, and the Chebyshev zero point is taken for the result of the spline interpolation. Lagrange interpolation is then performed with the Chebyshev zero point to obtain a polynomial result of the dark current annealing trend, thereby realizing the classification of different pixel damages after radiation of optoelectronic imaging devices. The present disclosure can realize pixel-level classification of radiation damage of optoelectronic imaging devices, and at the same time use coordinate system curves to describe the evolution of pixels. It has a wide range of applications and strong operability. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0044] Figure 1 A schematic flow chart of a method for classifying radiation damage to a photoelectric imaging device according to an embodiment of the present disclosure;

[0045] Figure 2 A schematic diagram of an interpolation result of dark current evolution of a single pixel provided by an embodiment of the present disclosure;

[0046] Figure 3 A schematic diagram of interpolation results of dark current evolution of multiple pixels provided by an embodiment of the present disclosure;

[0047] Figure 4 A schematic diagram of a classification result provided by an embodiment of the present disclosure;

[0048] Figure 5 A schematic diagram of another classification result provided by an embodiment of the present disclosure;

[0049] Figure 6 A schematic diagram of another classification result provided by an embodiment of the present disclosure;

[0050] Figure 7 1 is a schematic structural diagram of a device for pixel-level classification of radiation damage to a photoelectric imaging device provided by an embodiment of the present disclosure;

[0051] Figure 8 A schematic diagram of the hardware structure of an electronic device is shown. DETAILED DESCRIPTION

[0052] To make the disclosure objectives, features, and advantages of the present disclosure more apparent and understandable, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without creative work shall fall within the scope of protection of the present disclosure.

[0053] Example 1

[0054] See also Figure 1 , Figure 1 This is a flow chart of a method for classifying radiation damage to optoelectronic imaging devices provided in one embodiment of the present disclosure. The method can be applied to electronic devices, including mobile phones, tablet computers, laptops, smart watches, smart glasses, and other electronic devices capable of performing data processing while on the move, as well as desktop computers, all-in-one computers, smart TVs, and other electronic devices capable of performing data processing while on the move. The method mainly includes the following steps S101 to S106:

[0055] S101. Obtain dark current data of dark field image pixels collected by a photoelectric imaging device at different annealing times.

[0056] S102 , performing spline interpolation on dark current data of pixels that meet preset conditions to obtain a spline interpolation result.

[0057] S103. Obtain Chebyshev zero points for the spline interpolation result.

[0058] S104 , performing Lagrange interpolation on the Chebyshev zero point to obtain a polynomial result of dark current evolution, and plotting the polynomial result of dark current evolution into a dark current evolution curve in a preset coordinate system.

[0059] S105 , for every two different pixels, respectively plotting the dark current evolution curves of the every two different pixels in the preset coordinate system to obtain a curve plotting result.

[0060] S106 . Obtain pixel-level classification results of radiation damage of the optoelectronic imaging device based on the curve drawing result.

[0061] Among them, the pixels that meet the preset conditions can be the N pixels with the highest initial grayscale values, and N can be a positive integer such as 20, 30, 50, etc., which is not limited in this disclosure.

[0062] In one embodiment of the present disclosure, S101 obtains dark current data of dark field image pixels collected by the optoelectronic imaging device at different annealing times, including: collecting dark field images of the optoelectronic imaging device after irradiation at the different annealing times to obtain multiple dark field images; calculating the average grayscale value of each pixel in the dark field image at different integration times; using the integration time as the independent variable and the average grayscale value as the dependent variable, calculating the slope of the curve, and the slope of the curve is the dark current corresponding to each pixel.

[0063] In one embodiment of the present disclosure, S105 plots the dark current evolution curves of each two different pixels in the preset coordinate system, and obtains the curve drawing results including: plotting the dark current evolution curves of the target pixel and all other pixels in the coordinate system, where the other pixels are pixels other than the target pixel; for each dark current evolution curve of the target pixel and another pixel, calculating the standard deviation of the vertical coordinate difference corresponding to different horizontal coordinates; and classifying the two dark current evolution curves with the smallest standard deviation into one category to obtain the classification result of the target pixel.

[0064] In one embodiment of the present disclosure, S106 obtains the pixel-level classification result of the radiation damage of the optoelectronic imaging device based on the curve drawing result, including: taking the intersection of the classification results of all the target pixels to obtain the pixel-level classification result of the radiation damage of the optoelectronic imaging device.

[0065] In one embodiment of the present disclosure, the dark field image acquisition of the irradiated optoelectronic imaging device includes: acquiring at least twenty dark field images of the irradiated optoelectronic imager at each integration time.

[0066] Example 2

[0067] See also Figure 2-Figure 6 , Figure 2 A schematic diagram of the interpolation result of the dark current evolution of a single pixel provided by an embodiment of the present disclosure, Figure 3 A schematic diagram of the interpolation results of the dark current evolution of multiple pixels provided by an embodiment of the present disclosure, Figure 4A schematic diagram of a classification result provided by an embodiment of the present disclosure is shown. Figure 5 This is a schematic diagram of another classification result provided by an embodiment of the present disclosure. Figure 6 A schematic diagram of another classification result provided in an embodiment of the present disclosure.

[0068] This embodiment provides a method for classifying radiation damage of an optoelectronic imaging device, which can be performed according to the following steps:

[0069] a. Photoelectric imaging devices: Taking a scientific-grade CMOS image sensor (2048×2048) as an example, after irradiation with 3MeV protons, dark field tests were performed at different annealing times, with at least 20 images collected for each integration time.

[0070] b. Calculate the average grayscale value of each pixel in the dark field image at different integration times;

[0071] c. Using the integration time as the independent variable and the average grayscale value as the dependent variable, calculate the slope of the curve, i.e. the dark current corresponding to each pixel;

[0072] d. Repeat steps a to d for different annealing times to obtain dark current data of the image sensor pixel at different annealing times;

[0073] e. Perform spline interpolation on the dark current data of the 50 pixels with the highest initial grayscale values ​​to obtain a spline interpolation result;

[0074] f. Take Chebyshev zero point for the spline interpolation result;

[0075] g. Perform Lagrange interpolation on the Chebyshev zeros to obtain the polynomial results of dark current evolution and draw the dark current evolution curve, such as Figure 2 As shown;

[0076] h. Draw the dark current evolution curves of target pixel a and target pixel b in the same coordinate system, as shown in Figure 3 As shown, calculate different horizontal coordinates x1, x2, ..., x n The corresponding vertical coordinate differences △y1, △y2, ..., △y n ;

[0077] i. Calculate △y1, △y2, ..., △y n The standard deviation σ ab ;

[0078] j. Repeat steps h to i for pixel a and all other target curves to calculate σ ac , σ ad ,……;

[0079] k. The two curves with the smallest statistical standard deviation are classified into one category;

[0080] 1. Repeat steps h to k for all target pixels;

[0081] m. Take the intersection of the classification results of all curves to obtain the final classification result, such as Figure 4 、 Figure 5 、 Figure 6 shown.

[0082] Example 3

[0083] See also Figure 7 , Figure 7 This is a schematic structural diagram of a device for pixel-level classification of radiation damage to a photoelectric imaging device provided by an embodiment of the present disclosure. The device can be built into an electronic device. The device mainly includes:

[0084] An acquisition module 710 is used to acquire dark current data of dark field image pixels collected by the optoelectronic imaging device at different annealing times;

[0085] A first interpolation module 720 is configured to perform spline interpolation on the dark current data of pixels that meet a preset condition to obtain a spline interpolation result;

[0086] A value obtaining module 730 is used to obtain Chebyshev zero points for the spline interpolation result;

[0087] A second interpolation module 740 is configured to perform Lagrange interpolation on the Chebyshev zero to obtain a polynomial result of dark current evolution and plot the polynomial result of dark current evolution as a dark current evolution curve in a preset coordinate system;

[0088] The curve drawing module 750 is used to draw the dark current evolution curve of each two different pixels in the preset coordinate system to obtain a curve drawing result;

[0089] The classification module 760 is configured to obtain a pixel-level classification result of the radiation damage of the optoelectronic imaging device based on the curve drawing result.

[0090] In one embodiment of the present disclosure, the acquisition module 710 includes:

[0091] an acquisition module, configured to acquire dark field images of the irradiated photoelectric imaging device at different annealing times to obtain a plurality of dark field images;

[0092] A grayscale value calculation module is used to calculate the average grayscale value of each pixel in the dark field image at different integration times;

[0093] The slope calculation module is used to calculate the slope of a curve using the integration time as an independent variable and the average grayscale value as a dependent variable. The slope of the curve is the dark current corresponding to each pixel.

[0094] In one embodiment of the present disclosure, the curve drawing module 750 includes:

[0095] a drawing module, configured to draw dark current evolution curves of a target pixel and all other pixels in the coordinate system, wherein the other pixels are pixels other than the target pixel;

[0096] a calculation module, configured to calculate, for each dark current evolution curve of the target pixel and another pixel, a standard deviation of a vertical coordinate difference corresponding to different horizontal coordinates;

[0097] The classification module is used to classify the two dark current evolution curves with the smallest standard deviation into one category to obtain the classification result of the target pixel.

[0098] In one embodiment of the present disclosure, the classification module 760 includes:

[0099] The intersection of the classification results of all the target pixels is taken to obtain the pixel-level classification result of the radiation damage of the optoelectronic imaging device.

[0100] In one embodiment of the present disclosure, the dark field image acquisition of the irradiated optoelectronic imaging device includes: acquiring at least twenty dark field images of the irradiated optoelectronic imager at each integration time.

[0101] See Figure 8 , Figure 8 A hardware structure diagram of an electronic device is shown.

[0102] The electronic device described in this embodiment includes:

[0103] The memory 41, the processor 42 and the computer program stored in the memory 41 and capable of running on the processor, when the processor executes the program, realize the aforementioned Figure 1 The classification method of radiation damage to optoelectronic imaging devices described in the illustrated embodiment.

[0104] Furthermore, the electronic device further includes:

[0105] At least one input device 43 ; at least one output device 44 .

[0106] The memory 41 , processor 42 , input device 43 and output device 44 are connected via a bus 45 .

[0107] The input device 43 may be a camera, a touch panel, a physical button, a mouse, etc. The output device 44 may be a display screen.

[0108] The memory 41 can be a high-speed random access memory (RAM) memory or a non-volatile memory such as a disk memory. The memory 41 is used to store a set of executable program codes. The processor 42 is coupled to the memory 41.

[0109] Furthermore, the embodiment of the present disclosure further provides a computer-readable storage medium, which can be provided in the electronic device in the above embodiments. Figure 8 The electronic device in the embodiment shown. The computer readable storage medium stores a computer program, which, when executed by the processor, implements the aforementioned Figure 1 The classification method for radiation damage to optoelectronic imaging devices described in the illustrated embodiment. Furthermore, the computer storage medium may be any medium capable of storing program code, such as a USB flash drive, a mobile hard drive, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0110] It should be noted that the functional modules in the various embodiments of the present disclosure may be integrated into a single processing module, or each module may exist physically separately, or two or more modules may be integrated into a single module. The aforementioned integrated modules may be implemented in the form of hardware or software functional modules.

[0111] If the integrated module is implemented as a software functional module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present disclosure, or the part that contributes to the existing technology, or all or part of the technical solution, can be embodied in the form of a software product.

[0112] It should be noted that for the aforementioned method embodiments, for ease of description, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the present disclosure is not limited by the order of the actions described, because according to the present disclosure, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present disclosure.

[0113] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0114] The above is a description of the classification method, device, electronic device and readable storage medium for radiation damage of the optoelectronic imaging device of an electronic device provided by the present disclosure. For those skilled in the art, based on the ideas of the embodiments of the present disclosure, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present disclosure.

Claims

1. A classification method for radiation damage of optoelectronic imaging devices, characterized in that: include: Obtaining dark current data of dark field image pixels collected by the optoelectronic imaging device at different annealing times, including collecting dark field images of the irradiated optoelectronic imaging device at the different annealing times to obtain multiple dark field images; Calculating the average grayscale value of each pixel of the dark field image at different integration times; Taking the integration time as the independent variable and the average grayscale value as the dependent variable, calculating the slope of the curve, wherein the slope of the curve is the dark current corresponding to each pixel; Performing spline interpolation on the dark current data of pixels that meet preset conditions to obtain a spline interpolation result; Taking Chebyshev zero points for the spline interpolation result; Performing Lagrange interpolation on the Chebyshev zeros to obtain a polynomial result of dark current evolution and plotting the polynomial result of dark current evolution into a dark current evolution curve in a preset coordinate system; For every two different pixels, respectively plotting the dark current evolution curves of the two different pixels in the preset coordinate system to obtain a curve plotting result, including: plotting the dark current evolution curves of the target pixel and all other pixels in the coordinate system, where the other pixels are pixels other than the target pixel; for each dark current evolution curve of the target pixel and the other pixel, calculating the standard deviation of the vertical coordinate difference corresponding to different horizontal coordinates; and classifying the two dark current evolution curves with the smallest standard deviation into one category to obtain a classification result for the target pixel; According to the curve drawing result, a pixel-level classification result of the radiation damage of the optoelectronic imaging device is obtained, including: taking the intersection of the classification results of all the target pixels to obtain the pixel-level classification result of the radiation damage of the optoelectronic imaging device.

2. The classification method for radiation damage of optoelectronic imaging devices according to claim 1, characterized in that: The dark field image acquisition of the irradiated optoelectronic imaging device comprises: At each integration time, at least twenty dark field images are collected from the irradiated photoelectric imager.

3. A pixel-level classification device for radiation damage of optoelectronic imaging devices, characterized in that: include: An acquisition module, used to acquire dark current data of dark field image pixels collected by the optoelectronic imaging device at different annealing times; A first interpolation module is used to perform spline interpolation on dark current data of pixels that meet preset conditions to obtain a spline interpolation result; A value obtaining module, configured to obtain Chebyshev zero points for the spline interpolation result; a second interpolation module, configured to perform Lagrange interpolation on the Chebyshev zeros to obtain a polynomial result of dark current evolution and plot the polynomial result of dark current evolution into a dark current evolution curve in a preset coordinate system; a curve drawing module, configured to draw, for each two different pixels, dark current evolution curves of the two different pixels in the preset coordinate system to obtain a curve drawing result; A classification module, configured to obtain a pixel-level classification result of the radiation damage of the optoelectronic imaging device based on the curve drawing result, comprising: taking the intersection of the classification results of all target pixels to obtain the pixel-level classification result of the radiation damage of the optoelectronic imaging device; The acquisition module includes: an acquisition module, configured to acquire dark field images of the irradiated photoelectric imaging device at different annealing times to obtain a plurality of dark field images; A grayscale value calculation module is used to calculate the average grayscale value of each pixel in the dark field image at different integration times; A slope calculation module is configured to calculate a curve slope using the integration time as an independent variable and the average grayscale value as a dependent variable, wherein the curve slope is the dark current corresponding to each pixel; The curve drawing module includes: a drawing module, configured to draw dark current evolution curves of a target pixel and all other pixels in the coordinate system, wherein the other pixels are pixels other than the target pixel; a calculation module, configured to calculate, for each dark current evolution curve of the target pixel and another pixel, a standard deviation of a vertical coordinate difference corresponding to different horizontal coordinates; The classification module is used to classify the two dark current evolution curves with the smallest standard deviation into one category to obtain a classification result of the target pixel.

4. An electronic device comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, each step of the method for classifying radiation damage to a photoelectric imaging device as described in any one of claims 1 to 2 is implemented.

5. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, each step of the method for classifying radiation damage to a photoelectric imaging device according to any one of claims 1 to 2 is implemented.

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