A wafer detection system and method

Abstract

The present invention discloses a wafer detection system, which combines optics and band spectrum waves to establish an all-round optical and millimeter-wave noise scanning imaging. It includes: an optical detection unit, arranged at a first position relative to the wafer movement path, for performing optical imaging on the wafer; a band detection unit, arranged at a second position relative to the wafer movement path, for performing spectral imaging on the wafer; a detection and analysis unit, signal-connected to the optical detection unit and the band detection unit, for detecting and performing arithmetic analysis on the optical imaging information and the spectral imaging information to achieve the detection of the wafer and obtain the real-time state of the wafer. The present invention also provides a wafer detection method. The wafer detection system provided by the present invention can effectively detect the position, moving speed and moving process of the wafer cassette in real time, and at the same time can detect in real time whether the three-dimensional position or movement of the wafer cassette and the wafer is offset, and whether the wafer is damaged.

Description

Technical Field

[0001] The present invention relates to the field of wafer detection, and in particular to a wafer detection system and method. Background Art

[0002] Wet tank cleaning equipment is particularly important for achieving high-efficiency wafer transfer per unit time. Taking tank cleaning equipment as an example, the wafer mechanical moving device is a wafer transfer system device. The device composed of the wafer transfer and the guide module must effectively achieve high-efficiency wafer transfer during actual wafer transfer. In the process of transferring wafers or wafer boxes, it is usually necessary to transfer through a specific transfer process connection action. In the process of transfer, it is necessary to face the following two actual situations:

[0003] The incoming wafer box replaces the wafer box with the cleaning wafer box for cleaning;

[0004] The incoming wafer box takes out the wafers in batches from the wafer box for cleaning;

[0005] In both cases, it is necessary to keep the wafer box in the wafer box to ensure the coordination of the transfer process. The entire process can be controlled and various external forces that may damage the wafer box due to shaking must be avoided. Therefore, it is necessary to measure the wafer box and wafers during the transfer process and detect the position of the wafer box.

[0006] In traditional conventional designs, multiple sensors are installed on the conveying platform. During the conveying process, it is difficult to detect the specific position of the wafer box, the moving speed, and whether the wafers are misaligned, damaged, or missing. Summary of the invention

[0007] In order to facilitate the detection of the specific movement position and speed of a wafer box during the transmission process and whether the wafers are misaligned or missing, the present invention provides a wafer detection system and method.

[0008] In a first aspect, the present invention provides a wafer detection system that adopts the following technical solution:

[0009] A wafer detection system, using a combination of optics and band spectrum waves to establish omni-directional optical and millimeter wave noise scanning imaging; including

[0010] An optical detection unit, disposed at a first position relative to a wafer moving path, for optically imaging the wafer;

[0011] The band detection unit is arranged at a second position relative to the wafer moving path, and is used for performing spectral imaging on the wafer.

[0012] The detection and analysis unit is signal-connected to the optical detection unit and the band detection unit, and is used to detect and perform arithmetic analysis on the optical imaging information and the spectral imaging information to detect the wafer and obtain the real-time state of the wafer.

[0013] Optionally, the wafer detection system further includes:

[0014] The motion control unit is used to control the motion of the wafer according to the set program;

[0015] The detection and analysis unit is electrically connected to the motion control unit, obtains the set program of the wafer motion, and compares it with the real-time state of the detected wafer to perform wafer anomaly monitoring.

[0016] Optionally, the detection range of the wafer includes: detecting the real-time motion of the wafer, the wafer carrier device, and the wafer clamping device, where the real-time motion includes: planar transmission of a single action, planar transmission of multiple actions, vertical movement transmission of the wafer carrier device, transmission involving the wafer guiding action, and transmission of the wafer picking action.

[0017] Optionally, the detection range of the wafer includes: a first detection range, a second detection range, and a third detection range; where

[0018] The first detection range includes: real-time motion positioning of the wafer, misalignment, offset, and absence of the wafer;

[0019] The second detection range includes: real-time motion positioning of the wafer carrier device, misalignment, offset, and absence of the wafer carrier device, the height and relative moving speed of the wafer carrier device;

[0020] The third detection range includes: real-time motion positioning of the wafer clamping device, clamping misalignment, offset, and absence of the wafer clamping device, the height and relative moving speed of the wafer clamping device.

[0021] Optionally, the optical detection unit includes:

[0022] The light receiving integrated component is used to receive light and conduct it with deflection;

[0023] The light source integrated component is used to integrate the conducted light to optically scan the wafer;

[0024] The optical detection integrated component is used to detect the optical signal after the wafer is optically scanned and feedback it to the detection and analysis unit.

[0025] Optionally, the band detection unit includes:

[0026] The band emission end is used to emit millimeter waves to the X-axis, Y-axis, and Z-axis to form an omnidirectional space band scan;

[0027] Band detection integrated component, which is used to detect millimeter waves after the wafer is scanned in bands and feedback them to the detection and analysis unit.

[0028] Optionally, the wafer detection system further includes: a wafer carrier platform, on which a carrier position with a hollow middle is provided for supporting the wafer carrier device, and the receiving integrated component and the light source integrated component are arranged at the bottom of the wafer carrier platform and symmetrically distributed on both sides of the hollow position.

[0029] Optionally, both the receiving integrated component and the light source integrated component receive and conduct light through lifting movement and rotational swing.

[0030] Optionally, positioning blocks are provided on the wafer carrier platform corresponding to the carrier positions, and the positioning blocks are used to position the wafer carrier device.

[0031] Optionally, a detection sensor is provided on the positioning block for detecting whether the wafer carrier device is placed on the positioning feet of the positioning block.

[0032] Optionally, both the first position and the second position are on the same side of the wafer transmission path.

[0033] Optionally, the second position is in at least one of the X-axis, Y-axis, and Z-axis directions, and millimeter waves are emitted to the wafer for spectral scanning.

[0034] In a second aspect, the present invention provides a wafer detection method, including:

[0035] S1. The optical detection unit performs optical imaging on the wafer at a first position relative to the wafer, and the band detection unit performs spectral imaging on the wafer at a second position relative to the wafer;

[0036] S2. The detection and analysis unit performs detection and arithmetic analysis on the optical imaging and the spectral imaging to implement the detection of the wafer and obtain the real-time state of the wafer.

[0037] Optionally, in S1:

[0038] The optical emission end emits light sources to the X-axis, Y-axis, and Z-axis;

[0039] The receiving integrated component receives the light and conducts it with a turn;

[0040] The light source integrated component integrates the conducted light;

[0041] The optical detection integrated component detects the optical signal after the wafer is optically scanned.

[0042] Optionally, in S1:

[0043] The millimeter wave band transmitter emits millimeter waves along the X-axis, Y-axis, and Z-axis;

[0044] The millimeter wave band detection integrated component detects the millimeter waves after the wafer is scanned in the wave band.

[0045] Optionally, the wafer detection method further includes:

[0046] The detection and analysis unit obtains the set program of the wafer movement, compares it with the real-time state of the detected wafer, and monitors the wafer for abnormalities.

[0047] Compared with the prior art, the beneficial effects of the present invention are:

[0048] A wafer detection system of the present invention detects the wafer cassette and the wafer by coordinating optics and spectroscopy, and can effectively detect the position, moving speed, and moving process of the wafer cassette in real time. At the same time, it can detect in real time whether the three-dimensional position or movement of the wafer cassette and the wafer is offset, and whether the wafer is damaged. Description of the Drawings

[0049] Figure 1 Schematic diagram of the positional relationship between the receiving integrated component and the light source integrated component in the wafer detection system provided by an embodiment of the present invention;

[0050] Figure 2 Schematic diagram of the up and down movement of the receiving integrated component and the light source integrated component in the wafer detection system provided by an embodiment of the present invention;

[0051] Figure 3 Schematic diagram of the rotation of the receiving integrated component and the light source integrated component in the wafer detection system provided by an embodiment of the present invention;

[0052] Figure 4 Schematic diagram of the structure of the receiving integrated component in the wafer detection system provided by an embodiment of the present invention;

[0053] Figure 5 Schematic diagram of the structure of the light source integrated component in the wafer detection system provided by an embodiment of the present invention;

[0054] Figure 6 Schematic diagram of the optical detection of the wafer detection system provided by an embodiment of the present invention;

[0055] Figure 7 Schematic diagram of the wave band detection of the wafer detection system provided by an embodiment of the present invention;

[0056] Figure 8 Schematic diagram of the combination of optical detection and wave band detection of the wafer detection system provided by an embodiment of the present invention;

[0057] Figure 9Schematic diagram of the detection path of the wafer detection system provided by an embodiment of the present invention;

[0058] Figure 10 Schematic diagram of the detection of band detection in a wafer detection system provided by an embodiment of the present invention in a wafer transfer scenario;

[0059] Figure 11 Schematic diagram of the detection of band detection in a wafer detection system provided by an embodiment of the present invention in another wafer transfer scenario;

[0060] Figure 12 Schematic diagram of the detection of band detection in a wafer detection system provided by an embodiment of the present invention in yet another wafer transfer scenario;

[0061] Figure 13 Principle diagram of band detection in a wafer detection system provided by an embodiment of the present invention.

[0062] In the figure: 1. Receiving integrated component; 11. First meniscus negative lens; 12. Double convex positive lens; 13. Second meniscus negative lens; 2. Light source integrated component; 21. Light guide plate; 22. Grating and filter; 23. Shutter and aperture structure; 3. Wafer carrier platform; 4. Positioning block; 5. Wafer; 6. Wafer cassette. Detailed implementation manners

[0063] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0064] Refer to Figures 1 to 13 , an embodiment of a wafer detection system provided by the present invention, the wafer detection system, uses the combination of optics and band spectrum waves to establish an all-round optical and millimeter-wave noise scanning imaging; including

[0065] An optical detection unit, arranged at a first position relative to the moving path of the wafer 5, for performing optical imaging on the wafer 5;

[0066] A band detection unit, arranged at a second position relative to the moving path of the wafer 5, for performing spectral imaging on the wafer 5;

[0067] A detection and analysis unit, signal-connected to the optical detection unit and the band detection unit, for detecting and performing arithmetic analysis on the optical imaging information and the spectral imaging information to implement the detection of the wafer 5 and obtain the real-time state of the wafer 5;

[0068] A motion control unit for controlling the motion of the wafer 5 according to a set program;

[0069] The detection and analysis unit is electrically connected to the motion control unit, obtains the set program of the motion of the wafer 5, and compares it with the real-time state of the detected wafer 5 to monitor the abnormality of the wafer 5.

[0070] The optical detection unit performs optical detection and imaging on the wafer 5, the band detection unit performs spectral detection imaging on the wafer 5, and the detection and analysis unit performs detection and arithmetic analysis on the optical imaging and spectral imaging to achieve the detection of the wafer 5 and obtain the real-time state of the wafer 5. The detection and analysis unit obtains the set program of the motion of the wafer 5, and compares it with the real-time state of the detected wafer 5 to monitor the abnormality of the wafer 5.

[0071] The detection range of the wafer detection system for the wafer includes: the detection of the real-time motion of the wafer 5, the wafer carrier device, and the wafer clamping device, where the real-time motion includes: the planar transmission of a single action, the planar transmission of multiple actions, and the vertical movement transmission of the wafer carrier device, the transmission involving the wafer guiding action of the wafer 5, and the clamping action transmission of the wafer 5.

[0072] The detection range of the wafer detection system for the wafer includes: a first detection range, a second detection range, and a third detection range; where,

[0073] The first detection range includes: the real-time motion positioning of the wafer 5, the misalignment, offset, and absence of the wafer 5, as Figure 5 shown;

[0074] The second detection range includes: the real-time motion positioning of the wafer carrier device, the misalignment, offset, and absence of the wafer carrier device, the height and relative moving speed of the wafer carrier device, as Figure 7 , Figure 9 and Figure 10 shown;

[0075] The third detection range includes: the real-time motion positioning of the wafer clamping device, the clamping misalignment, offset, and absence of the wafer clamping device, the height and relative moving speed of the wafer clamping device, as Figure 11 and Figure 12 shown.

[0076] Refer to Figures 1 to 6 shown, the optical detection unit includes: an optical emission end for emitting light sources to the X-axis, Y-axis, and Z-axis to form an omnidirectional spatial optical scan;

[0077] The light receiving integrated component 1, the light receiving integrated component 1 can be lifted or rotated, so as to receive light and conduct it after turning;

[0078] The light source integration component 2 can be lifted or rotated to integrate and conduct light for optical scanning of the wafer 5.

[0079] Among them, the receiving integration component 1 includes a first meniscus negative lens 11, a biconvex positive lens 12, and a second meniscus negative lens 13 arranged in sequence along the light incident direction. The receiving integration component 1 receives the light from the light source integration component 2. The first meniscus negative lens 11, the biconvex positive lens 12, and the second meniscus negative lens 13 receive and converge the light and emit it towards the light source integration component 2, improving the scanning and imaging effects on the wafer 5.

[0080] The light source integration component 2 includes: a light guide plate 21 that can perform a small-angle rotation, a grating and a filter 22, and a shutter and aperture structure 23. Among them, the light guide plate 21 is arranged at the direct position of the incident light. The light guide plate 21 can be moved and rotated. The light guide plate 21 conducts the light, causing the light to enter the grating and the filter 22 and receive the light. The grating and the filter 22 are arranged perpendicular to the position of the light guide plate 21. The grating and the filter 22 filter and modulate the light, improving the imaging effect and conducting the light at the same time.

[0081] The grating and the filter 22 can be rotated and translated to adjust the incident angle and position of the light, perform an arc scan on the wafer 5, and thus realize the scanning and detection of wafers 5 at different positions. The shutter and aperture structure 23 is located above the grating and the filter 22 and corresponds to the hollow position. The arc scanning area of the light is parallel to the wafer 5, and finally the light scans and detects the wafer 5 through the shutter and aperture structure 22.

[0082] After the light is conducted by the light guide plate 21, filtered and conducted by the grating and the filter 22, and finally the shutter and aperture structure 23 performs an arc scan on the wafer 5 to perform an omnidirectional scan on the imaging information of the wafer 5 in the wafer cassette 6.

[0083] Furthermore, the wafer detection system further includes: a wafer carrier platform 3. A carrier position with a hollow in the middle is provided on the wafer carrier platform 3, and the carrier position is used to support the wafer carrier device. Positioning blocks 4 are provided on the wafer carrier platform 3 corresponding to the carrier position. The positioning blocks 4 are used to position the wafer carrier device (such as the wafer cassette 6). Detection sensors are provided on the positioning blocks 4 to detect whether the wafer carrier device is placed on the positioning feet of the positioning blocks 4. Among them, the receiving integration component 1 and the light source integration component 2 are arranged at the bottom of the wafer carrier platform 3 and symmetrically distributed on both sides of the hollow position. The optical fiber coming out of the light source integration component 2 enters the wafer carrier device through the hollow position of the wafer carrier platform 3 to detect the wafer 5.

[0084] Further, the optical detection unit further includes an optical detection integrated component, which is used to detect the optical signal after the optical scanning of the wafer 5 and feedback it to the detection and analysis unit. The light receiving integrated component 1 receives the light and conducts it to the light source integrated component 2. The light source integrated component 2 integrates the conducted light and performs optical scanning on the wafer 5; the optical detection integrated group detects the optical signal after the optical scanning of the wafer 5 and feedbacks it to the detection and analysis unit, and the detection and analysis unit analyzes the optical imaging information.

[0085] Reference Figures 7 to 13 , the band detection unit includes: a band emission end, located in at least one of the X-axis, Y-axis, and Z-axis directions, and is used to emit millimeter waves to the X-axis, Y-axis, and Z-axis to form an omnidirectional space band scan;

[0086] A band detection integrated component (reception end), which is used to detect the millimeter waves after the band scanning of the wafer 5 and feedback them to the detection and analysis unit.

[0087] The band detection unit can be set at any position on the transmission path of the wafer 5 according to requirements. For example, Figure 7 As shown, the band detection unit is set on one side of the wafer carrier platform with multiple wafer carrier positions. When the wafer 5 is transferred between multiple wafer carrier positions, the dynamics of the wafer cassette 6 and the wafer 5 are detected from the side. As Figure 11 and Figure 12 As shown, the band detection unit is set above the transfer position of the wafer 5, and the transfer actions such as wafer guiding and grasping of the wafer 5 are detected using the spatial position.

[0088] Preferably, the optical detection unit is set at a first position relative to the movement path of the wafer 5, and the band detection unit is set at a second position relative to the movement path of the wafer 5. The first position and the second position can both be located on the same side of the transmission path of the wafer 5, or can be located on different sides respectively.

[0089] Correspondingly, the present invention also provides a wafer detection method, which is applied to the aforementioned wafer detection system, and includes:

[0090] S1. The optical detection unit performs optical imaging on the wafer 5 at a first position relative to the wafer 5;

[0091] The optical emission end emits light sources to the X-axis, Y-axis, and Z-axis;

[0092] The light receiving integrated component 1 receives the light and conducts it with a turn;

[0093] The light source integrated component 2 integrates the conducted light;

[0094] The optical detection integrated component detects the optical signal after the optical scanning of the wafer 5.

[0095] The band detection unit performs spectral imaging on the wafer 5 at a second position relative to the wafer 5;

[0096] The band transmitting end emits millimeter waves along the X-axis, Y-axis, and Z-axis;

[0097] The band detection integrated component detects the millimeter waves after the wafer 5 is scanned in bands.

[0098] There is no chronological order between the optical transmitting end emitting light sources along the X-axis, Y-axis, and Z-axis and the band transmitting end emitting millimeter waves along the X-axis, Y-axis, and Z-axis. They can also be emitted simultaneously to image the wafer 5.

[0099] S2. The detection and analysis unit detects and performs arithmetic analysis on the optical imaging and spectral imaging to detect the wafer 5 and obtain the real-time state of the wafer 5.

[0100] The detection and analysis unit obtains the set program of the movement of the wafer 5, compares it with the real-time state of the detected wafer 5, and monitors for abnormalities in the wafer 5.

[0101] Working principle:

[0102] The transfer mechanism transfers the wafer cassette 6 carrying the wafer 5 along the wafer carrying platform 3. The wafer cassette 6 can be placed at the wafer carrying position. The receiving integrated component 1 of the optical detection unit receives light and conducts it after deflection. The light source integrated component 2 integrates the conducted light, and the optical detection integrated component detects the optical signal after the wafer 5 is optically scanned.

[0103] The band transmitting end of the band detection unit emits millimeter waves to the target detection position. After being detected by the target, the millimeter wave noise is fed back to the band detection integrated component (receiving end) to perform band detection on the detection target.

[0104] The optical detection integrated component detects the optical signal after the wafer 5 is optically scanned, and the band detection integrated component detects the millimeter waves after the wafer 5 is optically scanned. The detection and analysis unit detects and performs arithmetic analysis on the optical imaging and spectral imaging to detect the wafer 5 and obtain the real-time state of the wafer 5. Thus, it detects whether the three-dimensional position or movement of the wafer cassette 6 and the wafer 5 is offset, and whether the wafer 5 is damaged.

[0105] It should be noted that in the wafer detection method provided by the present invention, either optical detection or band detection can be used to detect the wafer 5, or a combination of both can be used for comprehensive multi-directional detection. Among them, when using a combination of both for detection, optical detection and band detection can be performed simultaneously during the same wafer 5 transmission process, or sequentially. Of course, optical detection can also be implemented in one transmission process, and band detection can be used in another transmission process.

[0106] It is obvious to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, in all respects, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be embraced within the present invention. Any reference signs in the claims should not be construed as limiting the claims involved.

Claims

1. A wafer detection system, characterized in that: An all-round optical and millimeter-wave noise scanning imaging is established by combining optics and band spectrum waves, including: An optical detection unit, arranged at a first position relative to the moving path of the wafer (5), for performing optical imaging on the wafer (5); A band detection unit, arranged at a second position relative to the moving path of the wafer (5), for performing spectral imaging on the wafer (5); A detection and analysis unit, signal-connected to the optical detection unit and the band detection unit, for detecting and performing arithmetic analysis on the optical imaging information and the spectral imaging information to detect the wafer (5) and obtain the real-time state of the wafer (5); The detection of the wafer (5) includes: detecting the real-time movements of the wafer (5), the wafer carrier device, and the wafer clamping device; The optical detection unit includes: an optical emission end, for emitting light sources along the X-axis, Y-axis, and Z-axis to form an all-round spatial optical scan; The band detection unit includes: A band emission end, for emitting millimeter waves along the X-axis, Y-axis, and Z-axis to form an all-round spatial band scan.

2. The wafer detection system according to claim 1, wherein: It further includes: A motion control unit, for controlling the movement of the wafer (5) according to a set program; The detection and analysis unit is electrically connected to the motion control unit, obtains the set program of the movement of the wafer (5), and compares it with the real-time state of the detected wafer (5) to perform abnormal monitoring of the wafer (5).

3. A wafer detection system according to claim 1, characterized in that: The real-time movements include: planar transmission of a single action of the wafer carrier device, planar transmission of multiple actions, vertical movement transmission, transmission involving the wafer guiding action of the wafer (5), and transmission of the wafer clamping action of the wafer (5).

4. A wafer detection system according to claim 1, wherein: The detection range of the wafer (5) includes: a first detection range, a second detection range, and a third detection range; wherein, The first detection range includes: real-time movement positioning of the wafer (5), misalignment, offset, and absence of the wafer (5); The second detection range includes: real-time movement positioning of the wafer carrier device, misalignment, offset, and absence of the wafer carrier device, height and relative moving speed of the wafer carrier device; The third detection range includes: real-time movement positioning of the wafer clamping device, clamping misalignment, offset, and absence of the wafer clamping device, height and relative moving speed of the wafer clamping device.

5. A wafer detection system according to claim 3, characterized in that: The optical detection unit includes: A light receiving integrated component (1), for receiving light and conducting it with a turn; A light source integrated component (2), for integrating the conducted light to perform optical scanning on the wafer (5); An optical detection integrated component, for detecting the optical signal after optical scanning of the wafer (5) and feeding it back to the detection and analysis unit.

6. The wafer detection system according to claim 5, wherein: The band detection unit includes: A band detection integrated component, for detecting the millimeter waves after band scanning of the wafer (5) and feeding it back to the detection and analysis unit.

7. The wafer detection system according to claim 5, wherein It further includes: A wafer carrier platform (3), with a carrier position with a hollow in the middle on the wafer carrier platform (3), for supporting the wafer carrier device, and the light receiving integrated component (1) and the light source integrated component (2) are arranged at the bottom of the wafer carrier platform (3) and symmetrically distributed on both sides of the hollow position.

8. The wafer detection system according to claim 7, wherein, Both the light receiving integrated component (1) and the light source integrated component (2) receive and conduct light through lifting movement and rotational swinging.

9. The wafer detection system according to claim 7, wherein, A positioning block (4) is provided corresponding to the carrying position on the wafer carrying platform (3) for positioning the wafer carrying device.

10. The wafer detection system according to claim 9, wherein, A detection sensor is provided on the positioning block (4) for detecting whether the wafer carrying device is placed on the positioning feet of the positioning block (4).

11. The wafer detection system according to claim 1, wherein Both the first position and the second position are on the same side of the wafer (5) transmission path.

12. The wafer detection system according to claim 1, wherein The second position is in at least one direction of the X-axis, Y-axis, and Z-axis, and emits millimeter waves towards the wafer (5) for spectral scanning.

13. A wafer detection method, applied to the wafer detection system according to any one of claims 1 to 12, characterized in that, Including: S1. The optical detection unit performs optical imaging on the wafer (5) at a first position relative to the wafer (5), and the band detection unit performs spectral imaging on the wafer (5) at a second position relative to the wafer (5); S2. The detection and analysis unit performs detection and arithmetic analysis on the optical imaging and the spectral imaging to achieve detection of the wafer (5) and obtain the real-time state of the wafer (5).

14. The wafer detection method according to claim 13, wherein In S1: The optical emission end emits light sources towards the X-axis, Y-axis, and Z-axis; The light receiving integrated component (1) receives the light and conducts it with a turn; The light source integrated component (2) integrates the conducted light; The optical detection integrated component detects the optical signal after the optical scanning of the wafer (5).

15. The wafer detection method according to claim 13, wherein, In S1: The band emission end emits millimeter waves towards the X-axis, Y-axis, and Z-axis; The band detection integrated component detects the millimeter waves after the band scanning of the wafer (5).

16. The wafer detection method according to claim 13, wherein It further includes: The detection and analysis unit obtains the set program of the movement of the wafer (5), compares it with the real-time state of the detected wafer (5), and performs abnormal monitoring of the wafer (5).

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