A wafer warpage adjustment method, device, equipment and readable storage medium

Abstract

This application discloses a method, apparatus, device, and readable storage medium for adjusting wafer warpage. The adsorption force of each platform region on the support platform is independently controlled. The method includes: after a thin film is deposited on the support platform, acquiring the warpage parameters of each corresponding wafer region; determining the adsorption force of each platform region based on the warpage parameters of each wafer region; and controlling the adsorption force of each platform region based on the adsorption force of the next wafer when a thin film is deposited on the support platform, so that the warpage parameters of each wafer region after film deposition are within a preset range. The technical solution disclosed in this application achieves dynamic adjustment of the warpage of different regions and directions of the wafer by independently controlling the adsorption force of each platform region based on the warpage parameters of each region after film deposition on the previous wafer, thereby ensuring warpage stability and improving the warpage adjustment effect.

Description

Technical Field

[0001] This application relates to the field of three-dimensional integration technology, and more specifically, to a method, apparatus, device, and readable storage medium for adjusting wafer warpage. Background Technology

[0002] In the field of 3D integration, many processes, such as wafer bonding, have high requirements for wafer warpage. It is typically necessary to monitor wafer warpage and adjust it at specific process stations to improve product yield and performance.

[0003] Currently, thin films are commonly deposited on wafer surfaces using methods such as Chemical Vapor Deposition (CVD) to adjust wafer warpage. Specifically, this involves attaching the wafer to a support platform and depositing a thin film on its surface. However, due to differences in crystal orientation, X / Y direction design variations, and increasing industrial complexity, wafer warpage deteriorates rapidly, resulting in significant differences in warpage across different directions. Current warpage adjustment methods using thin film deposition are non-directional and cannot address warpage in different directions, leading to poor warpage adjustment results.

[0004] In summary, how to improve the wafer warpage adjustment effect is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of this, the purpose of this application is to provide a wafer warpage adjustment method, apparatus, device, and readable storage medium.

[0006] To achieve the above objectives, this application provides the following technical solution:

[0007] A wafer warpage adjustment method is provided, wherein a wafer-supporting platform is divided into multiple platform regions, and the adsorption force of each platform region is independently controlled. The wafer warpage adjustment method includes:

[0008] After the wafer to be processed completes thin film deposition on the carrier platform, the warpage parameters of the wafer regions corresponding to each platform region in the wafer to be processed are obtained.

[0009] The magnitude of the adsorption force of each platform region is determined based on the warpage parameters of each wafer region.

[0010] When the next wafer to be processed is deposited with a thin film on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region, so that the warpage parameter of each wafer region in the wafer after film deposition is within a preset range.

[0011] Preferably, the adsorption force of each platform region is determined based on the warpage parameter of each wafer region, including:

[0012] Based on the predetermined correspondence between the warp parameter and the magnitude of the adsorption force, and the warp parameter of each wafer region, the magnitude of the adsorption force of each platform region is determined.

[0013] The corresponding relationship is determined by repeatedly running an advanced process control method to adjust the adsorption force of each platform region based on the warpage parameters of each wafer region after the previous wafer was deposited with a thin film.

[0014] Preferably, after ensuring that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range, the method further includes:

[0015] The correspondence is updated based on the warpage parameters of each wafer region in the previous wafer after the thin film deposition and the adsorption force of each platform region of the wafer after the thin film deposition.

[0016] Preferably, when the next wafer to be processed deposits a thin film on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region, so that the warpage parameter of each wafer region in the wafer after film deposition is within a preset range, including:

[0017] The next wafer to be processed is taken as the current wafer to be processed. When the current wafer to be processed deposits a thin film on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region.

[0018] After the current wafer to be processed completes thin film deposition, the warpage parameters of the wafer regions corresponding to each of the platform regions in the current wafer to be processed are obtained;

[0019] Determine whether the warpage parameter of each wafer region in the current wafer to be processed is within the preset range;

[0020] If not, then based on the warpage parameters of each wafer region in the current wafer to be processed, determine the adsorption force of each platform region, and return to the step of taking the next wafer to be processed as the current wafer to be processed, until the warpage parameters of each wafer region in the current wafer to be processed are within the preset range.

[0021] Preferably, if it is determined that the warpage parameter of each wafer region in the current wafer to be processed is not within the preset range, then the method further includes:

[0022] A message is issued indicating that the warp parameter is not within the preset range.

[0023] Preferably, each of the platform regions contains multiple vacuum zones, with the vacuum zones in the same platform region being centrally controlled and the vacuum zones in different platform regions being independently controlled.

[0024] Preferably, the warp parameter includes any one of warp, curvature, alignment, and line width.

[0025] A wafer warpage adjustment device is provided, wherein the support platform for supporting the wafer is divided into multiple platform regions, and the adsorption force of each platform region is independently controlled. The wafer warpage adjustment device includes:

[0026] The acquisition module is used to acquire the warpage parameters of the wafer regions corresponding to each platform region of the wafer after the wafer to be processed has completed thin film deposition on the carrier platform.

[0027] The determination module is used to determine the magnitude of the adsorption force of each platform region based on the warpage parameter of each wafer region;

[0028] The control module is used to control the adsorption force of each platform region according to the determined adsorption force of each platform region when the next wafer to be processed is deposited on the carrier platform, so as to keep the warpage parameter of each wafer region in the wafer after film deposition within a preset range.

[0029] A wafer warpage adjustment device, comprising:

[0030] Memory, used to store computer programs;

[0031] A processor for executing the computer program to implement the steps of the wafer warpage adjustment method as described in any of the preceding claims.

[0032] A readable storage medium storing a computer program that, when executed by a processor, implements the steps of the wafer warpage adjustment method as described in any of the preceding claims.

[0033] This application provides a wafer warpage adjustment method, apparatus, device, and readable storage medium. The wafer support platform is divided into multiple platform regions, and the adsorption force of each platform region is independently controlled. The wafer warpage adjustment method includes: after the wafer to be processed completes thin film deposition on the support platform, obtaining the warpage parameters of the wafer regions corresponding to each platform region; determining the adsorption force of each platform region based on the warpage parameters of each wafer region; and when the next wafer to be processed deposits a thin film on the support platform, controlling the adsorption force of each platform region based on the determined adsorption force, so that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range.

[0034] The technical solution disclosed in this application involves a support platform divided into multiple platform regions, each with independently controllable adsorption force. By independently controlling the adsorption force of each platform region based on the warpage parameters of each region after the previous wafer's thin film deposition, different tensile forces are applied to different regions on the back side of the wafer. This allows for dynamic adjustment of the warpage in different regions and directions of the wafer, ensuring warpage stability and improving wafer warpage adjustment effectiveness. Consequently, it facilitates improved product yield and performance. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0036] Figure 1 A schematic diagram of a saddle-shaped wafer;

[0037] Figure 2 A schematic diagram of an ideal wafer;

[0038] Figure 3 A flowchart illustrating a wafer warpage adjustment method provided in this application embodiment;

[0039] Figure 4 A schematic diagram of a carrier platform provided in an embodiment of this application;

[0040] Figure 5 A schematic diagram of a bowl-shaped wafer;

[0041] Figure 6 A flowchart illustrating another wafer warpage adjustment method provided in this application embodiment;

[0042] Figure 7This is a schematic diagram of the structure of a wafer warpage adjustment device provided in an embodiment of this application;

[0043] Figure 8 This is a schematic diagram of a wafer warpage adjustment device provided in an embodiment of this application. Detailed Implementation

[0044] Currently, in methods for adjusting wafer warpage by depositing thin films on the wafer surface, a vacuum tube is installed beneath the entire area of ​​the support platform. This vacuum tube applies an adsorption force to the entire platform, holding the wafer in place. Thin films are then deposited on the wafer surface to adjust its warpage. However, due to variations in crystal orientation, X / Y direction design differences, and increasing process complexity, wafer warpage can deteriorate drastically, resulting in significant warpage variations across different directions. In other words, wafer warpage is non-uniform. Thin film deposition for warpage adjustment lacks directionality and cannot address warpage adjustments in different wafer orientations. For example... Figure 1 The schematic diagram of the saddle-shaped wafer shown illustrates that the warping of this saddle-shaped wafer varies significantly in all directions. Therefore, adjusting the warping using thin-film deposition cannot completely restore the wafer to its flat state; in other words, it cannot be fully restored to its original shape. Figure 2 The ideal wafer shown.

[0045] Therefore, this application provides a wafer warpage adjustment method, apparatus, device, and readable storage medium to improve the wafer warpage adjustment effect, thereby improving product yield and performance.

[0046] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0047] See Figure 3 and Figure 4 ,in, Figure 3 The flowchart shown is a method for adjusting wafer warpage according to an embodiment of this application. Figure 4 This illustration shows a schematic diagram of a support platform provided in an embodiment of this application. The wafer warpage adjustment method provided in this application involves a support platform 1 for supporting the wafer divided into multiple platform regions 10, where the adsorption force of each platform region 10 is independently controlled. The wafer warpage adjustment method may include:

[0048] S11: After the wafer to be processed completes thin film deposition on the carrier platform, obtain the warpage parameters of the wafer regions corresponding to each platform region in the wafer to be processed.

[0049] In this application, the support platform 1 used to support the wafer during thin film deposition is divided into multiple platform regions 10. The adsorption force of each platform region 10 is independently controlled; that is, the gas pipeline corresponding to each platform region 10 is individually connected to a gas to independently control the adsorption force of the corresponding platform region 10. It should be noted that... Figure 4 The illustration shows the case where the carrier platform 1 is evenly divided into 8 platform regions 10, but it does not limit the carrier platform 1 to only 8 platform regions 10. The number of platform regions 10 divided by the carrier platform 1 is at least two, and the specific number of platform regions 10 can be set based on wafer fabrication process, product precision requirements, and practical experience.

[0050] Specifically, the carrier platform 1 mentioned here can be a heating tray (or heating carrier tray) in a thin film deposition equipment (such as a CVD equipment) to carry, adsorb, and heat the wafer.

[0051] After any wafer to be processed (i.e., the wafer whose warpage needs adjustment) completes thin film deposition on the support platform 1, the warpage parameters of the wafer regions corresponding to each platform region 10 can be measured at subsequent measurement stations. The thin film mentioned here can be a silicon nitride film, a silicon oxide film, or a silicon oxynitride film, etc., to provide tensile stress through the deposited film, thereby adjusting the wafer warpage to a certain extent. It should be noted that when any of the aforementioned wafers to be processed is the first wafer in a batch, the adsorption force of each platform region 10 during thin film deposition on the support platform 1 can be the corresponding initial adsorption force. The initial adsorption force of each platform region 10 can be determined based on experience, taking into account the warpage data from previous thin film deposition on other batches of wafers on the support platform 1. When any of the wafers to be processed mentioned above is a wafer other than the first wafer in a certain batch, when the wafer to be processed is deposited on the carrier platform 1, the adsorption force of each platform region 10 is determined according to the warpage parameter of each wafer region in the previous wafer, that is, the wafer to be processed is deposited in accordance with the steps S12 and S13 of this application.

[0052] The specific method for obtaining the warpage parameters of the wafer regions corresponding to each platform region 10 in the wafer to be processed can be as follows: Measuring the warpage parameters of each corresponding wafer region in a selected direction to obtain the warpage parameters of the corresponding wafer region. Specifically, the warpage parameters can be measured at one location or multiple locations in the selected direction (when measuring warpage parameters at multiple locations, the warpage parameters at these multiple locations can be averaged to obtain the warpage parameters of the corresponding wafer region). Furthermore, the selected direction can be the same or different for each wafer region. Alternatively, for each corresponding wafer region, the method is not limited to the selected direction; instead, the warpage parameters at multiple locations in the wafer region can be measured, and the average value of the warpage parameters can be calculated, using this average value as the warpage parameter of the corresponding wafer region. Alternatively, for each corresponding wafer region, the warpage parameters at a specific location can be measured separately, and this warpage parameter can be used as the warpage parameter of the corresponding wafer, etc. Preferably, the first method mentioned above is used to measure and obtain the warpage parameters of each wafer region in the wafer to be processed.

[0053] S12: Determine the magnitude of the adsorption force in each platform region based on the warpage parameters of each wafer region.

[0054] After obtaining the warpage parameters of each wafer region in the wafer to be processed, the adsorption force of each platform region 10 can be determined based on these parameters. For example, if the warpage parameters of a wafer region indicate that a certain wafer region is concavely twisted in the X direction, then the adsorption force of that wafer region in the X direction on the back side will increase to increase the pulling force, thereby achieving the purpose of flattening the X direction. Alternatively, if the warpage of the wafer in the X direction is greater than that in the Y direction, the adsorption force in the X direction can be decreased or the adsorption force in the Y direction can be increased; conversely, if the warpage of the wafer in the X direction is less than that in the Y direction, the adsorption force in the X direction can be increased or the adsorption force in the Y direction can be decreased.

[0055] S13: When the next wafer to be processed is deposited on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region, so that the warpage parameter of each wafer region in the wafer after film deposition is within the preset range.

[0056] Based on step S12, when the next wafer to be processed is deposited on the carrier platform 1, the adsorption force of each platform region 10 can be controlled according to the determined adsorption force of each platform region 10 (specifically, the adsorption force of each platform region 10 is determined according to the warpage parameters of each wafer region measured after the previous wafer to be processed is deposited). By controlling the adsorption force of each platform region 10 when the next wafer to be processed is deposited with a film based on the warpage parameters of each wafer region measured after the previous wafer to be processed is deposited in the two adjacent wafers, the wafer warpage can be dynamically adjusted. That is, the wafer warpage can be dynamically adjusted through the thin film deposition process APC (Advanced Process Control), so that the warpage parameters of each wafer region in the wafer after thin film deposition can be within a preset range, thereby achieving the stability of warpage by adjusting the process parameters. The preset range can be set in conjunction with the requirements of subsequent process technology regarding wafer warpage. Specifically, the preset range can be determined based on the warpage of an ideal wafer (i.e., a normal wafer without warpage) to adjust wafers with anisotropic warpage to the ideal wafer. Figure 1 Adjusting the saddle-shaped wafer in the middle to Figure 2 The ideal wafer shown; or, the preset range can be determined based on the warp of isotropic (referring to isotropic warp) wafers to adjust wafers with anisotropic warp to isotropic wafers, such as... Figure 1 Adjusting the saddle-shaped wafer in the middle to Figure 5 The bowl-shaped wafer shown (also known as an umbrella-shaped wafer) is shown.

[0057] As described above, this application applies different adsorption forces to different areas of the back side of the wafer (i.e., the side that adheres to the support platform 1) during the thin film deposition process. This achieves different tensile forces on different areas of the back side of the wafer, thereby adjusting the wafer warpage level. Furthermore, it dynamically adjusts the wafer warpage based on the warpage of different areas of the previous wafer. The measurement results are fed back to the thin film deposition process, and the warpage is stabilized in real time by adjusting the process parameters.

[0058] In other words, this application achieves warpage adjustment by combining thin film deposition with adjusting the adsorption force of each region during thin film deposition, and uses APC to achieve dynamic adjustment of wafer warpage, thereby making the warpage of each position on the wafer have small or even almost no difference, so as to improve the wafer warpage adjustment effect.

[0059] In this process, after ensuring that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range, the adsorption force of each platform region 10 can remain unchanged during subsequent thin film deposition. Alternatively, the warpage parameters of each wafer region can be continuously monitored and obtained. If the warpage parameters are not within the preset range, the adsorption force of each platform region 10 can be determined based on the warpage parameters of each wafer region to adjust the adsorption force of each platform region 10. This facilitates timely adjustment of wafer warpage and improves the wafer warpage adjustment effect.

[0060] The technical solution disclosed in this application involves a support platform divided into multiple platform regions, each with independently controllable adsorption force. By independently controlling the adsorption force of each platform region based on the warpage parameters of each region after the previous wafer's thin film deposition, different tensile forces are applied to different regions on the back side of the wafer. This allows for dynamic adjustment of the warpage in different regions and directions of the wafer, ensuring warpage stability and improving wafer warpage adjustment effectiveness. Consequently, it facilitates improved product yield and performance.

[0061] This application provides a wafer warpage adjustment method that determines the adsorption force of each platform region 10 based on the warpage parameters of each wafer region. This method may include:

[0062] Based on the predetermined correspondence between the warp parameter and the magnitude of the adsorption force, and the warp parameter of each wafer region, the magnitude of the adsorption force of each platform region 10 is determined;

[0063] The corresponding relationship is determined by repeatedly running an advanced process control method to adjust the adsorption force of each platform region 10 based on the warpage parameters of each wafer region after the previous wafer was deposited with a thin film.

[0064] In this application, an advanced process control method can be used to repeatedly run the steps of "adjusting the adsorption force of each platform region 10 during film deposition on the next wafer based on the warpage parameters of each wafer region after film deposition on the previous wafer". This allows for a cycle of film deposition on multiple wafers, measurement of warpage parameters of each wafer region, adjustment of the adsorption force of each platform region 10 based on the warpage parameters of each wafer region after film deposition on the previous wafer, film deposition, etc. In other words, starting from the first wafer, the process can be repeated multiple times. The process involves depositing a thin film on a wafer, measuring the warpage parameters of each wafer region after film deposition on the first wafer, adjusting the adsorption force of each platform region 10 based on the warpage parameters of each wafer region after film deposition on the second wafer, measuring the warpage parameters of each wafer region after film deposition on the second wafer, and so on, until a predetermined number of wafers are processed (corresponding to the multiple runs mentioned above). This completes the process of repeatedly adjusting the adsorption force of each platform region 10 based on the warpage parameters of each wafer region after film deposition on the previous wafer. Then, the desired warpage parameters and corresponding adsorption forces are selected, and the selected warpage parameters and corresponding adsorption forces are fitted to obtain the correspondence between the warpage parameters and the adsorption forces.

[0065] After pre-determining the correspondence between warpage parameters and adsorption force, the adsorption force of each platform region 10 can be determined based on the warpage parameters of each wafer region. This allows for the determination of the adsorption force of each platform region 10, based on the pre-determined correspondence between warpage parameters and adsorption force, and the warpage parameters of each wafer region after the previous wafer was deposited with a thin film. This improves the accuracy of determining the adsorption force of the platform region 10, thereby shortening the time for the wafer warpage to reach the preset range and improving the efficiency and effectiveness of wafer warpage adjustment. See details in [link to documentation]. Figure 6 It shows a flowchart of another wafer warpage adjustment method provided in an embodiment of this application. Figure 6 The APC parameter specifically refers to the adsorption force of each platform region 10, and the APC adjustment coefficient is the correspondence between the warpage parameter and the adsorption force. Figure 6When determining the adsorption force of each platform region 10, it is done based on the pre-determined correspondence between the warp parameter and the adsorption force. Once the adsorption force of each platform region 10 is determined, the newly determined adsorption force of each platform region 10 can be used to update and overwrite the previous adsorption force. Before performing thin film deposition on the next wafer to be processed, the adsorption force of each platform region 10 can be obtained and controlled. Then, thin film deposition, measurement and other processes are performed.

[0066] The wafer warpage adjustment method provided in this application embodiment, after ensuring that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range, may further include:

[0067] The corresponding relationships are updated based on the warpage parameters of each wafer region in the previous wafer after thin film deposition and the adsorption force of each platform region 10 on the wafer after thin film deposition.

[0068] In this application, after ensuring that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range, the corresponding relationship can be updated based on the warpage parameters of each wafer region in the previous wafer of the wafer after thin film deposition (where the warpage parameters of each wafer region are within the preset range) and the magnitude of the adsorption force of each platform region 10 of the wafer after thin film deposition during thin film deposition.

[0069] Assuming that the wafer after thin film deposition in each wafer region is called the target wafer, then the wafer before the wafer after thin film deposition mentioned above is the wafer before the target wafer, that is, the wafer adjacent to the target wafer and located before the target wafer.

[0070] In other words, the pre-determined correspondence between the warpage parameter and the adsorption force is updated based on the adsorption force magnitude that meets the requirements and the corresponding warpage parameter, so that the correspondence becomes more and more accurate, thereby improving the accuracy of determining the adsorption force magnitude in each platform region, and thus shortening the wafer warpage adjustment time, improving the wafer warpage adjustment efficiency and effect.

[0071] This application provides a wafer warpage adjustment method. When a wafer to be processed is deposited with a thin film on a support platform 1, the adsorption force of each platform region 10 is controlled according to the determined adsorption force of each platform region 10, so that the warpage parameter of each wafer region in the wafer after film deposition is within a preset range. This method may include:

[0072] The next wafer to be processed is taken as the current wafer to be processed. When the current wafer to be processed is depositing a thin film on the carrier platform 1, the adsorption force of each platform region 10 is controlled according to the determined adsorption force of each platform region 10.

[0073] After the current wafer to be processed completes the thin film deposition, the warpage parameters of the wafer regions corresponding to each platform region 10 in the current wafer to be processed are obtained.

[0074] Determine whether the warpage parameters of each wafer region in the current wafer to be processed are within the preset range;

[0075] If not, the adsorption force of each platform region 10 is determined based on the warpage parameters of each wafer region in the current wafer to be processed, and the process returns to the step of taking the next wafer to be processed as the current wafer to be processed, until the warpage parameters of each wafer region in the current wafer to be processed are within the preset range.

[0076] In this application, when a wafer to be processed is deposited with a thin film on the support platform 1, the adsorption force of each platform region 10 is controlled according to the determined adsorption force of each platform region 10 so that the warpage parameter of each wafer region in the wafer after film deposition is within a preset range. The specific implementation process can be as follows:

[0077] (1) First, the next wafer to be processed is taken as the current wafer to be processed. When the current wafer to be processed deposits a thin film on the carrier platform 1, the adsorption force of each platform region 10 is controlled according to the determined adsorption force of each platform region 10 (specifically determined according to the warpage parameter of each wafer region after the previous wafer to be processed deposits a thin film).

[0078] (2) After the current wafer to be processed completes the thin film deposition, obtain the warpage parameters of the wafer regions corresponding to each platform region 10 in the current wafer to be processed;

[0079] (3) Determine whether the warpage parameter of each wafer region in the current wafer to be processed is within the preset range; if the warpage parameter of each wafer region in the current wafer to be processed is within the preset range, the corresponding adsorption force of each platform region 10 can be maintained during the subsequent thin film deposition of the wafer; if the warpage parameter of each wafer region in the current wafer to be processed is not within the preset range, then proceed to step (4).

[0080] (4) Based on the warpage parameters of each wafer region in the current wafer to be processed, determine the adsorption force of each platform region 10. If there is a pre-determined correspondence between the warpage parameters and the adsorption force, the adsorption force of each platform region 10 can be determined by the correspondence. If there is no pre-determined correspondence between the warpage parameters and the adsorption force, the adsorption force of each platform region 10 can be received from the outside or determined according to the pre-set adsorption force adjustment rules (which may include the adsorption force adjustment step size, etc.). Then, return to the step of taking the next wafer to be processed as the current wafer to be processed, that is, return to step (1) until the warpage parameters of each wafer region in the current wafer to be processed are within the preset range.

[0081] The above implementation method can be applied to situations where there is no pre-determined correspondence between the warp parameter and the magnitude of the adsorption force, or it can be applied to situations where there is a pre-determined correspondence between the warp parameter and the magnitude of the adsorption force.

[0082] The above process involves using the APC method to dynamically adjust the wafer warpage, so that the warpage parameters of each wafer region in the wafer after thin film deposition can be within a preset range, thereby improving the warpage adjustment effect.

[0083] The wafer warpage adjustment method provided in this application embodiment, if it is determined that the warpage parameters of each wafer region in the current wafer to be processed are not within a preset range, may further include:

[0084] A message is issued indicating that the warp parameter is not within the preset range.

[0085] In this application, when it is determined that the warpage parameter of each wafer region in the current wafer to be processed is not within the preset range, a prompt can be issued indicating that the warpage parameter is not within the preset range. Specifically, the prompt can be issued through email, SMS, interface prompt, etc., so that relevant personnel can be informed that the warpage parameter is not within the preset range, thereby facilitating relevant personnel to take measures such as inputting the adsorption force of each platform region 10.

[0086] This application provides a wafer warpage adjustment method in which each platform region 10 contains multiple vacuum zones 2, the vacuum zones 2 in the same platform region 10 are centrally controlled, and the vacuum zones 2 in different platform regions 10 are independently controlled.

[0087] In this application, each platform region 10 may contain multiple vacuum zones 2, each of which can be individually connected to a gas. Alternatively, each platform region 10 may contain only one vacuum zone 2, such as... Figure 4As shown, each platform area 10 includes a vacuum zone 2 to reduce the number of vacuum zones 2 used.

[0088] When each platform region 10 contains multiple vacuum zones 2, the vacuum zones 2 within the same platform region 10 can be centrally controlled so that each vacuum zone 2 within the same region can provide the same amount of adsorption force. Of course, each vacuum zone 2 within the same platform region 10 can also be controlled independently.

[0089] The vacuum zone 2 in different platform regions 10 is controlled independently, so that the adsorption force of each platform region 10 is controlled independently.

[0090] This application provides a wafer warpage adjustment method, wherein the warpage parameters may include any one of warpage, curvature, alignment, and linewidth.

[0091] In this application, the warpage parameter may specifically include any one of warpage, curvature, alignment (OVL), and linewidth (CD). Any parameter that can reflect the degree of warpage of the wafer in space can be used as the warpage parameter.

[0092] See Figure 7 This document illustrates a schematic diagram of a wafer warpage adjustment device provided in an embodiment of this application. The wafer warpage adjustment device, as provided in this application, uses a support platform for supporting the wafer divided into multiple platform regions, each with independently controllable adsorption force. The wafer warpage adjustment device may include:

[0093] The acquisition module 71 is used to acquire the warpage parameters of the wafer regions corresponding to each platform region of the wafer after the wafer to be processed has completed thin film deposition on the carrier platform.

[0094] The determination module 72 is used to determine the magnitude of the adsorption force of each platform region based on the warpage parameters of each wafer region;

[0095] The control module 73 is used to control the adsorption force of each platform region according to the determined adsorption force of each platform region when the next wafer to be processed is deposited on the carrier platform, so as to keep the warpage parameter of each wafer region in the wafer after film deposition within a preset range.

[0096] This application provides a wafer warpage adjustment device, wherein the determining module 72 may include:

[0097] The determination unit is used to determine the magnitude of the adsorption force of each platform region based on the pre-determined correspondence between the warp parameter and the magnitude of the adsorption force, and the warp parameter of each wafer region.

[0098] The corresponding relationship is determined by repeatedly running advanced process control methods to adjust the adsorption force of each platform region based on the warpage parameters of each wafer region after the previous wafer was deposited with a thin film.

[0099] The wafer warpage adjustment device provided in this application embodiment may further include a determining module 72 comprising:

[0100] The update unit is used to update the corresponding relationship after ensuring that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range, based on the warpage parameters of each wafer region in the previous wafer after thin film deposition and the adsorption force of each platform region of the wafer after thin film deposition.

[0101] This application provides a wafer warpage adjustment device, wherein the control module 73 may include:

[0102] The control unit is used to select the next wafer to be processed as the current wafer to be processed. When the current wafer to be processed is depositing a thin film on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region.

[0103] The acquisition unit is used to acquire the warpage parameters of the wafer regions corresponding to each platform region in the current wafer after the current wafer to be processed has completed thin film deposition.

[0104] The judgment unit is used to determine whether the warpage parameter of each wafer region in the current wafer to be processed is within a preset range;

[0105] The return unit is used to determine the adsorption force of each platform region based on the warp parameters of each wafer region in the current wafer to be processed if the warp parameters of each wafer region in the current wafer to be processed are not within the preset range, and return to execute the step of taking the next wafer to be processed as the current wafer to be processed, until the warp parameters of each wafer region in the current wafer to be processed are within the preset range.

[0106] The wafer warpage adjustment device provided in this application embodiment may further include a control module 73 comprising:

[0107] The prompting unit is used to issue a prompt that the warpage parameter is not within the preset range if it is determined that the warpage parameter of each wafer region in the current wafer to be processed is not within the preset range.

[0108] This application provides a wafer warpage adjustment device in which each platform region contains multiple vacuum zones. Vacuum zones in the same platform region are centrally controlled, while vacuum zones in different platform regions are independently controlled.

[0109] This application provides a wafer warpage adjustment device, wherein the warpage parameters may include any one of warpage, curvature, alignment, and linewidth.

[0110] This application also provides a wafer warpage adjustment device, see [link to relevant documentation]. Figure 8 It shows a schematic diagram of the structure of a wafer warpage adjustment device provided in an embodiment of this application, which may include:

[0111] Memory 81 is used to store computer programs;

[0112] When the processor 82 executes the computer program stored in the memory 81, it can perform the following steps:

[0113] After the wafer to be processed completes thin film deposition on the carrier platform, the warpage parameters of the wafer regions corresponding to each platform region in the wafer to be processed are obtained; based on the warpage parameters of each wafer region, the magnitude of the adsorption force of each platform region is determined; when the next wafer to be processed is deposited on the carrier platform, the adsorption force of each platform region is controlled according to the determined magnitude of the adsorption force of each platform region, so that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range.

[0114] This application embodiment also provides a readable storage medium storing a computer program, which, when executed by a processor, can perform the following steps:

[0115] After the wafer to be processed completes thin film deposition on the carrier platform, the warpage parameters of the wafer regions corresponding to each platform region in the wafer to be processed are obtained; based on the warpage parameters of each wafer region, the magnitude of the adsorption force of each platform region is determined; when the next wafer to be processed is deposited on the carrier platform, the adsorption force of each platform region is controlled according to the determined magnitude of the adsorption force of each platform region, so that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range.

[0116] The readable storage medium may include various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0117] For a description of the relevant parts of the wafer warpage adjustment device, equipment and readable storage medium provided in this application, please refer to the detailed description of the corresponding parts in the wafer warpage adjustment method provided in the embodiments of this application, and will not be repeated here.

[0118] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that the elements inherent in a process, method, article, or apparatus that includes a list of elements are included. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, portions of the technical solutions provided in the embodiments of this application that are consistent with the implementation principles of corresponding technical solutions in the prior art have not been described in detail to avoid excessive elaboration.

[0119] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for adjusting wafer warpage, characterized in that, The support platform for supporting the wafer is divided into multiple platform regions, and the adsorption force of each platform region is independently controlled. The wafer warpage adjustment method includes: After the wafer to be processed completes thin film deposition on the carrier platform, the warpage parameters of the wafer regions corresponding to each platform region are obtained; the warpage is adjusted by providing tensile stress through the deposited thin film. Based on the predetermined correspondence between the warp parameter and the adsorption force, and the warp parameter of each wafer region, the adsorption force of each platform region is determined; wherein, the correspondence is determined by using an advanced process control method to adjust the adsorption force of each platform region by repeatedly running the process based on the warp parameter of each wafer region after the previous wafer was deposited with a thin film. When a wafer to be processed is deposited with a thin film on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region, so that the warpage parameter of each wafer region in the wafer after film deposition is within a preset range, including: The next wafer to be processed is taken as the current wafer to be processed. When the current wafer to be processed deposits a thin film on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region. After the current wafer to be processed completes thin film deposition, the warpage parameters of the wafer regions corresponding to each of the platform regions in the current wafer to be processed are obtained; Determine whether the warpage parameter of each wafer region in the current wafer to be processed is within the preset range; If not, then based on the warpage parameters of each wafer region in the current wafer to be processed, determine the adsorption force of each platform region, and return to the step of taking the next wafer to be processed as the current wafer to be processed, until the warpage parameters of each wafer region in the current wafer to be processed are within the preset range.

2. The wafer warpage adjustment method according to claim 1, characterized in that, After ensuring that the warpage parameters of each wafer region in the wafer after thin film deposition are within a preset range, the process also includes: The correspondence is updated based on the warpage parameters of each wafer region in the previous wafer after the thin film deposition and the adsorption force of each platform region of the wafer after the thin film deposition.

3. The wafer warpage adjustment method according to claim 1, characterized in that, If it is determined that the warpage parameter of each wafer region in the current wafer to be processed is not within the preset range, then the process further includes: A message is issued indicating that the warp parameter is not within the preset range.

4. The wafer warpage adjustment method according to claim 1, characterized in that, Each of the platform regions contains multiple vacuum zones. Vacuum zones within the same platform region are centrally controlled, while vacuum zones in different platform regions are independently controlled.

5. The wafer warpage adjustment method according to claim 1, characterized in that, The warpage parameter includes any one of warpage, curvature, alignment, and line width.

6. A wafer warpage adjustment device, characterized in that, The wafer support platform is divided into multiple platform regions, and the adsorption force of each platform region is independently controlled. The wafer warpage adjustment device includes: The acquisition module is used to acquire the warpage parameters of the wafer regions corresponding to each platform region of the wafer after the wafer to be processed has completed thin film deposition on the carrier platform; and to adjust the warpage by providing tensile stress through the deposited thin film. The determination module is used to determine the adsorption force of each platform region based on the pre-determined correspondence between the warp parameter and the adsorption force, and the warp parameter of each wafer region; wherein, the correspondence is determined by using an advanced process control method to adjust the adsorption force of each platform region by adjusting the warp parameter of each wafer region after the previous wafer was deposited with a thin film. The control module is used to control the adsorption force of each platform region based on the determined adsorption force of each platform region when a wafer to be processed is deposited on the carrier platform, so as to keep the warpage parameter of each wafer region in the wafer after film deposition within a preset range, including: The next wafer to be processed is taken as the current wafer to be processed. When the current wafer to be processed deposits a thin film on the carrier platform, the adsorption force of each platform region is controlled according to the determined adsorption force of each platform region. After the current wafer to be processed completes thin film deposition, the warpage parameters of the wafer regions corresponding to each of the platform regions in the current wafer to be processed are obtained; Determine whether the warpage parameter of each wafer region in the current wafer to be processed is within the preset range; If not, then based on the warpage parameters of each wafer region in the current wafer to be processed, determine the adsorption force of each platform region, and return to the step of taking the next wafer to be processed as the current wafer to be processed, until the warpage parameters of each wafer region in the current wafer to be processed are within the preset range.

7. A wafer warpage adjustment device, characterized in that, include: Memory, used to store computer programs; A processor, configured to execute the computer program to implement the steps of the wafer warpage adjustment method as described in any one of claims 1 to 5.

8. A readable storage medium, characterized in that, The readable storage medium stores a computer program that, when executed by a processor, implements the steps of the wafer warpage adjustment method as described in any one of claims 1 to 5.

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