Method for adjusting color temperature of luminous panel and luminous panel

Abstract

The present invention discloses a method for adjusting the color temperature of a light-emitting panel and a light-emitting panel. The adjustment method includes: determining the glass transition temperature of each of a first light-emitting layer, a second light-emitting layer, and an N-type doped sublayer and a P-type doped sublayer in a charge generation layer in the light-emitting panel; wherein the first light-emitting layer and the second light-emitting layer have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures; and applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer, and the P-type doped sublayer to the light-emitting panel to modify the main material of at least one of the layers and adjust the color temperature. This method achieves adjustment of the light output color of a light-emitting panel having at least two light-emitting layers connected in series, thereby improving the user experience.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of luminescence technology, and in particular to a method for adjusting the color temperature of a luminescent panel and a luminescent panel. Background Art

[0002] Organic Light Emitting Diode (OLED) light-emitting panel is a self-luminous element with the advantages of being light, thin, high brightness, low power consumption, wide viewing angle, high response speed, and flexibility. It is increasingly being used in various high-performance display and lighting fields.

[0003] Currently, for a light-emitting panel having two or more stacked light-emitting layers, the light output color is the mixed color of the light emitted by all the light-emitting layers. In such an organic electroluminescent element, although the brightness can be changed by changing the amount of current passed through, for a given light-emitting layer, it is impossible to meet the demand for changing the light output color. Therefore, how to adjust the light output color of a light-emitting panel having at least two light-emitting layers connected in series has become a problem that people in this field urgently need to solve. Summary of the Invention

[0004] The embodiments of the present invention provide a method for adjusting the color temperature of a light-emitting panel and a light-emitting panel, so as to adjust the light color of a light-emitting panel having at least two light-emitting layers connected in series, thereby improving the user experience.

[0005] According to one aspect of the present invention, a method for adjusting the color temperature of a light-emitting panel is provided. The light-emitting panel includes a first light-emitting layer, a second light-emitting layer, and a charge generation layer located between the first light-emitting layer and the second light-emitting layer; the charge generation layer includes an N-type doped sublayer and a P-type doped sublayer, and the first light-emitting layer and the second light-emitting layer emit different colors. The method for adjusting the color temperature of the light-emitting panel includes:

[0006] Determining the glass transition temperature of each of the first light-emitting layer, the second light-emitting layer, and the N-type doped sublayer and the P-type doped sublayer in the charge generation layer in the light-emitting panel; wherein the first light-emitting layer and the second light-emitting layer have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures;

[0007] A heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer and the P-type doped sublayer is applied to the light-emitting panel to modify the main material of at least one of the layers and adjust the color temperature.

[0008] Optionally, the light emitted by the first light-emitting layer and the light emitted by the second light-emitting layer are mixed to form white light;

[0009] If the glass transition temperature of the first light-emitting layer is greater than the glass transition temperature of the second light-emitting layer; applying a heating temperature to the light-emitting panel to adjust the color temperature includes:

[0010] Applying a heating temperature greater than the glass transition temperature of the second light-emitting layer and less than the glass transition temperature of the first light-emitting layer to the light-emitting panel to destroy the host material of the second light-emitting layer and adjust the light emission color of the second light-emitting layer;

[0011] Alternatively, applying a temperature greater than the glass transition temperature of the first light-emitting layer to the light-emitting panel to destroy the host materials of the first light-emitting layer and the second light-emitting layer to adjust the color temperature of the white light;

[0012] If the glass transition temperature of the second light-emitting layer is greater than the glass transition temperature of the first light-emitting layer; applying a heating temperature to the light-emitting panel to adjust the color temperature includes:

[0013] Applying a heating temperature greater than the glass transition temperature of the first light-emitting layer and less than the glass transition temperature of the second light-emitting layer to the light-emitting panel to destroy the host material of the first light-emitting layer and adjust the light emission color of the first light-emitting layer;

[0014] Alternatively, a temperature higher than the glass transition temperature of the second light-emitting layer is applied to the light-emitting panel to destroy the main materials of the first light-emitting layer and the second light-emitting layer, thereby adjusting the color temperature of the white light.

[0015] Optionally, if the glass transition temperature of the N-type doped sublayer is greater than the glass transition temperature of the P-type doped sublayer; applying a heating temperature to the light-emitting panel to adjust the color temperature includes:

[0016] Applying a heating temperature greater than the glass transition temperature of the P-type doped sublayer and less than the glass transition temperature of the N-type doped sublayer to the light-emitting panel to reduce the mobility of the P-type doped sublayer and adjust the luminescent color of the light-emitting layer closer to the P-type doped sublayer;

[0017] Alternatively, applying a temperature greater than the glass transition temperature of the N-type doped sublayer to the light emitting panel to reduce the mobility of the P-type doped sublayer and the N-type doped sublayer to adjust the color temperature of the white light;

[0018] If the glass transition temperature of the P-type doped sublayer is greater than the glass transition temperature of the N-type doped sublayer; applying a heating temperature to the light emitting panel to adjust the color temperature includes:

[0019] Applying a heating temperature to the light-emitting panel that is greater than the glass transition temperature of the N-type doped sublayer and less than the glass transition temperature of the P-type doped sublayer to reduce the mobility of the N-type doped sublayer and adjust the luminescent color of the light-emitting layer closer to the N-type doped sublayer;

[0020] Alternatively, a temperature greater than the glass transition temperature of the P-type doped sublayer is applied to the light emitting panel to reduce the mobility of the P-type doped sublayer and the N-type doped sublayer, thereby adjusting the color temperature of the white light.

[0021] Optionally, the light-emitting panel comprises at least three light-emitting layers emitting different colors; wherein the at least three light-emitting layers emitting different colors include the first light-emitting layer and the second light-emitting layer; a charge generation layer is provided between each two adjacent light-emitting layers; mixed light from all the light-emitting layers is white light; and the method for adjusting the color temperature of the light-emitting panel further comprises:

[0022] Determining the glass transition temperature of each light-emitting layer in the light-emitting panel, and the glass transition temperature of the N-type doped sublayer and the P-type doped sublayer in each charge generation layer;

[0023] A heating temperature is applied to the light emitting panel according to a target color temperature, and the light emitting colors of the corresponding number of light emitting layers are adjusted.

[0024] Optionally, before applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer, and the P-type doped sublayer to the light-emitting panel, the method further includes:

[0025] Determining a color-changing region in the light-emitting panel according to a preset color-changing pattern; wherein the number of the preset color-changing pattern is at least one;

[0026] The heating temperature applied to each color-changing area is determined according to the color temperature change corresponding to each color-changing pattern.

[0027] According to another aspect of the present invention, a light-emitting panel is provided, comprising a first light-emitting layer, a second light-emitting layer, and a charge generation layer located between the first light-emitting layer and the second light-emitting layer; the charge generation layer comprises an N-type doped sublayer and a P-type doped sublayer, and the first light-emitting layer and the second light-emitting layer emit light of different colors;

[0028] The first light-emitting layer and the second light-emitting layer have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures, so that after applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer and the P-type doped sublayer to the light-emitting panel, the main material of at least one of the film layers is modified to adjust the color temperature.

[0029] Optionally, the light-emitting panel further comprises: an anode, a cathode, a first functional layer, and a second functional layer; the anode is located on a side of the first light-emitting layer away from the second light-emitting layer, and the cathode is located on a side of the second light-emitting layer away from the first light-emitting layer; the first functional layer is located at least one location between the first light-emitting layer and the charge generation layer and between the first light-emitting layer and the anode; the second functional layer is located at least one location between the second light-emitting layer and the charge generation layer and between the second light-emitting layer and the cathode;

[0030] The first functional layer and the second functional layer have different glass transition temperatures, so that after applying a heating temperature greater than the glass transition temperature of at least one of the first functional layer and the second light-emitting functional layer to the light-emitting panel, the main material of at least one of the first functional layer and the second functional layer is modified to adjust the color temperature.

[0031] Optionally, when the first functional layer is located between the first light-emitting layer and the positive electrode, the first functional layer includes at least one of a first hole injection layer, a first hole transport layer and a first electron blocking layer; the glass transition temperature of at least one of the first hole injection layer, the first hole transport layer and the first electron blocking layer is different from the glass transition temperature of the second functional layer.

[0032] When the first functional layer is located between the first light-emitting layer and the charge generation layer, the first functional layer includes at least one layer of a first electron injection layer, a first electron transport layer and a first hole blocking layer; the glass transition temperature of at least one layer of the first electron injection layer, the first electron transport layer and the first hole blocking layer is different from the glass transition temperature of the second functional layer.

[0033] Optionally, when the second functional layer is located between the second light-emitting layer and the charge generation layer, the second functional layer includes at least one of a second hole injection layer, a second hole transport layer, and a second electron blocking layer; and the glass transition temperature of at least one of the second hole injection layer, the second hole transport layer, and the second electron blocking layer is different from the glass transition temperature of the first functional layer;

[0034] When the second functional layer is located between the second light-emitting layer and the second electrode layer, the second functional layer includes at least one of a second electron injection layer, a second electron transport layer and a second hole blocking layer; the glass transition temperature of at least one of the second electron injection layer, the second electron transport layer and the second hole blocking layer is different from the glass transition temperature of the first functional layer.

[0035] Optionally, the light-emitting panel includes at least three light-emitting layers emitting different colors; wherein, the at least three light-emitting layers emitting different colors include the first light-emitting layer and the second light-emitting layer; there is a charge generation layer between each two adjacent light-emitting layers; the mixed light of all the light-emitting layers is white light, and different light-emitting layers have different glass transition temperatures.

[0036] The technical solution provided by the embodiment of the present invention limits the glass transition temperature of the main material of the first light-emitting layer and the glass transition temperature of the main material of the second light-emitting layer to be different, and / or limits the glass transition temperature of the N-type doped sublayer in the charge generation layer and the glass transition temperature of the P-type doped sublayer to be different; by applying external heat, a heating temperature greater than the glass transition temperature of at least one film layer among the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer and the P-type doped sublayer is applied to the light-emitting panel, causing the main material of the film layer with a lower glass transition temperature to be modified, and adjusting the color of light emitted by at least one light-emitting layer, thereby realizing the adjustment of the light output color of the light-emitting panel having at least two light-emitting layers connected in series, thereby improving the user experience.

[0037] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a flow chart of a method for adjusting the color temperature of a light-emitting panel provided by an embodiment of the present invention;

[0039] Figure 2 This is a structural diagram of a light-emitting panel provided by an embodiment of the present invention;

[0040] Figure 3 is a structural schematic diagram of another light-emitting panel provided by an embodiment of the present invention;

[0041] Figure 4 is a structural schematic diagram of another light-emitting panel provided by an embodiment of the present invention;

[0042] Figure 5 This is a flow chart of another method for adjusting the color temperature of a light-emitting panel provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0043] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0044] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0045] The embodiment of the present invention provides a method for adjusting the color temperature of a light-emitting panel. Figure 1 This is a flow chart of a method for adjusting the color temperature of a light emitting panel provided by an embodiment of the present invention, with reference to Figure 1 , the method for adjusting the color temperature of the light-emitting panel includes:

[0046] S110. Determine the glass transition temperatures of the first light-emitting layer, the second light-emitting layer, and the N-type doped sublayer and the P-type doped sublayer in the charge generation layer in the light-emitting panel; wherein the first light-emitting layer and the second light-emitting layer have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures.

[0047] Specifically, Figure 2 This is a schematic structural diagram of a light emitting panel provided by an embodiment of the present invention, referring to Figure 2The light-emitting panel includes a substrate 10, a first electrode layer 20, a first light-emitting layer 30, a charge generation layer 40, a second light-emitting layer 50, a second electrode layer 60, and an encapsulation layer 70. The first light-emitting layer 30 and the second light-emitting layer 50 emit different colors. Before color adjustment, the light-emitting panel emits a mixed color of the light from the first light-emitting layer 30 and the second light-emitting layer 50. The charge generation layer 40 (CGL) is composed of a first-type doped sublayer 41 and a second-type doped sublayer 42. One of the first-type doped sublayer 41 and the second-type doped sublayer 42 is a P-type semiconductor and the other is an N-type semiconductor. When the device is operating, the CGL can generate hole-electron pairs under the action of an electric field. This allows carriers to travel to the charge injection layer without crossing the energy level barrier of the electrode, thereby making charge injection independent of the electrode material. The charge generation layer 40 is used to connect the first light-emitting layer 30 and the second light-emitting layer 50 in series.

[0048] The first electrode layer 20 and the second electrode layer 60 in the display panel are respectively a positive electrode and a negative electrode. Figure 2 , the positive electrode is located on the side of the first light-emitting layer 30 away from the second light-emitting layer 50, and the negative electrode is located on the side of the second light-emitting layer 50 away from the first light-emitting layer 30, then the N-type doped sublayer (41) in the charge generation layer 40 is adjacent to the first light-emitting layer 30, and the P-type doped sublayer (42) in the charge generation layer 40 is adjacent to the second light-emitting layer 50. If the positive electrode is located on the side of the second light-emitting layer 50 away from the first light-emitting layer 30, and the negative electrode is located on the side of the first light-emitting layer 30 away from the second light-emitting layer 50, then the N-type doped sublayer in the charge generation layer 40 is adjacent to the second light-emitting layer 50, and the P-type doped sublayer in the charge generation layer 40 is adjacent to the first light-emitting layer 30.

[0049] The glass transition is an inherent property of amorphous polymers (i.e., amorphous polymers). It is a macroscopic manifestation of the change in the polymer's motion pattern and directly affects the material's performance and processing properties. Most polymer materials can typically exist in four physical states (or mechanical states): glassy, ​​viscoelastic, highly elastic (rubbery), and viscous-flow. The glass transition is the transition between the highly elastic and glassy states. In this embodiment, the first luminescent layer 30 and the second luminescent layer 50 have different glass transition temperatures (Tg), and the N-type and P-type doped sublayers in the charge generation layer 40 have the same Tg. Alternatively, the first luminescent layer 30 and the second luminescent layer 50 have the same Tg, and the N-type and P-type doped sublayers in the charge generation layer 40 have different Tgs. Alternatively, the first luminescent layer 30 and the second luminescent layer 50 have different Tgs, and the N-type and P-type doped sublayers in the charge generation layer 40 have different Tgs.

[0050] S120, applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer and the P-type doped sublayer to the light-emitting panel to modify the main material of at least one of the film layers and adjust the color temperature.

[0051] Specifically, each light-emitting layer contains at least a host material and a phosphorescent material. The host material includes at least a first host material and a second host material. The glass transition point of the first host material differs significantly from the glass transition point of the second host material, for example, by more than 70°C. Furthermore, the Tg of the first host material is higher than the Tg of the second host material. The first host material undergoes denaturation upon heating. It can be understood that when the host material of the first light-emitting layer 30 and the second light-emitting layer 50 undergo denaturation, it is the first host material within each respective layer that denatures. Due to the higher glass transition temperature, the second host material within each respective layer does not undergo denaturation. The following descriptions of the denaturation of the host material of the first light-emitting layer 30 and the denaturation of the host material of the second light-emitting layer 50 refer to the respective first host materials.

[0052] A heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer 30, the second light-emitting layer 50, the N-type doped sublayer, and the P-type doped sublayer is applied to the light-emitting panel to modify the main material of at least one of the film layers and adjust the color temperature. Color temperature refers to the different colors produced by applying different temperatures to an absolute black body. The color temperature of a light source is determined by comparing its color with a theoretical thermal black body radiator, and the unit is Kelvin (Kelvin is the unit of measurement for temperature, symbol K). Different color temperatures correspond to different colors, so the approximate temperature can be judged by the color, that is, adjusting the color of the light emitted by the light-emitting panel is equivalent to adjusting the color temperature of the light-emitting panel.

[0053] The applied heating temperature can exceed the glass transition temperature of at least one of the first light-emitting layer 30, the second light-emitting layer 50, the N-type doped sublayer, and the P-type doped sublayer, causing at least one of the first light-emitting layer 30, the second light-emitting layer 50, the N-type doped sublayer, and the P-type doped sublayer to undergo denaturation. Taking the denaturation of the host material of a single layer as an example, if the first light-emitting layer 30 has the lowest glass transition temperature, the emission color of the first light-emitting layer 30 can be adjusted, shifting the light output color of the display panel toward that of the second light-emitting layer 50. Alternatively, if the second light-emitting layer 50 has the lowest glass transition temperature, the emission color of the second light-emitting layer 50 can be adjusted, shifting the light output color of the display panel toward that of the first light-emitting layer 30. Alternatively, if the N-type doped sublayer has the lowest glass transition temperature, the emission color of the light-emitting layer adjacent to the N-type doped sublayer can be adjusted, causing the recombination area of ​​the light-emitting layer adjacent to the N-type doped sublayer to change, shifting the light output color of the display panel toward that of the other light-emitting layer. Alternatively, if the glass transition temperature of the P-type doped sublayer is the lowest, the luminous color of the light-emitting layer adjacent to the P-type doped sublayer can be adjusted, so that the recombination area of ​​the light-emitting layer adjacent to the P-type doped sublayer changes, and the light-emitting color of the display panel is biased towards the light-emitting color of another light-emitting layer.

[0054] The method for adjusting the color temperature of a light-emitting panel provided in an embodiment of the present invention applies a heating temperature greater than the glass transition temperature of at least one film layer among the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer and the P-type doped sublayer to the light-emitting panel by applying external heat, thereby causing the main material of the film layer with a lower glass transition temperature to be modified, and adjusting the color of light emitted by at least one light-emitting layer, thereby achieving the adjustment of the light output color of the light-emitting panel having at least two light-emitting layers connected in series, and improving the user experience.

[0055] Optional, reference Figure 2 The light emitted by the first light-emitting layer 30 and the light emitted by the second light-emitting layer 50 mix to form white light. For example, the first light-emitting layer 30 may emit blue light, while the second light-emitting layer 50 may emit yellow light. Alternatively, the first light-emitting layer 30 may emit yellow light, while the second light-emitting layer 50 may emit blue light. The blue and yellow light mix to form a white light-emitting screen.

[0056] In one embodiment of the present method, optionally, the glass transition temperature of the first light-emitting layer 30 is greater than the glass transition temperature of the second light-emitting layer 50; applying a heating temperature to the light-emitting panel to adjust the color temperature includes:

[0057] Applying a heating temperature greater than the glass transition temperature of the second light-emitting layer 50 and less than the glass transition temperature of the first light-emitting layer 30 to the light-emitting panel to destroy the host material of the second light-emitting layer 50 and adjust the light color of the second light-emitting layer 50;

[0058] Alternatively, a temperature higher than the glass transition temperature of the first light-emitting layer 30 is applied to the light-emitting panel to destroy the main materials of the first light-emitting layer 30 and the second light-emitting layer 50 , thereby adjusting the color temperature of the overall white light.

[0059] Specifically, let's take the example of a case where the first light-emitting layer 30 emits blue and the second light-emitting layer 50 emits yellow. If the glass transition temperature of the first light-emitting layer 30 is higher than that of the second light-emitting layer 50, then heating the light-emitting panel to a temperature higher than the glass transition temperature of the second light-emitting layer 50 but lower than the glass transition temperature of the first light-emitting layer 30 can destroy the main material of the second light-emitting layer 50, adjusting the yellow light emitted by the second light-emitting layer 50 and shifting the color of the light emitted by the light-emitting panel toward blue, thereby increasing the color temperature of the light-emitting panel. Applying a temperature higher than the glass transition temperature of the first light-emitting layer 30 to the light-emitting panel can also destroy the main materials of the first and second light-emitting layers 30, 50, thereby achieving overall white light color temperature adjustment.

[0060] In one embodiment of the present method, optionally, the glass transition temperature of the second light-emitting layer 50 is greater than the glass transition temperature of the first light-emitting layer 30; applying a heating temperature to the light-emitting panel to adjust the color temperature includes:

[0061] Applying a heating temperature greater than the glass transition temperature of the first light-emitting layer 30 and less than the glass transition temperature of the second light-emitting layer 50 to the light-emitting panel to destroy the host material of the first light-emitting layer 30 and adjust the light color of the first light-emitting layer 30;

[0062] Alternatively, a glass transition temperature higher than that of the second light-emitting layer 50 is applied to the light-emitting panel to destroy the main materials of the first light-emitting layer 30 and the second light-emitting layer 50 , thereby adjusting the color temperature of the overall white light.

[0063] Specifically, let's take the example of a case where the first light-emitting layer 30 emits blue light and the second light-emitting layer 50 emits yellow light. If the glass transition temperature of the second light-emitting layer 50 is higher than that of the first light-emitting layer 30, then applying a heating temperature greater than the glass transition temperature of the first light-emitting layer 30 but less than the glass transition temperature of the second light-emitting layer 50 to the light-emitting panel can destroy the main material of the first light-emitting layer 30, adjust the blue light emitted by the first light-emitting layer 30, and shift the light color of the light-emitting panel toward yellow, thereby reducing the color temperature of the light-emitting panel. Applying a heating temperature greater than the glass transition temperature of the second light-emitting layer 50 to the light-emitting panel can also destroy the main materials of the first and second light-emitting layers 30, 50, thereby achieving overall white light color temperature adjustment.

[0064] In one embodiment of the present method, optionally, the glass transition temperature of the N-type doped sublayer is greater than the glass transition temperature of the P-type doped sublayer; applying a heating temperature to the light-emitting panel to adjust the color temperature includes:

[0065] Applying a heating temperature greater than the glass transition temperature of the P-type doped sublayer and less than the glass transition temperature of the N-type doped sublayer to the light-emitting panel to reduce the mobility of the P-type doped sublayer and adjust the luminescent color of the light-emitting layer closer to the P-type doped sublayer;

[0066] Alternatively, a temperature greater than the glass transition temperature of the N-type doped sublayer is applied to the light emitting panel to reduce the mobility of the P-type doped sublayer and the N-type doped sublayer, thereby adjusting the color temperature of the white light.

[0067] Specifically, refer to Figure 2 , the positive electrode is located on the side of the first light-emitting layer 30 away from the second light-emitting layer 50, and the negative electrode is located on the side of the second light-emitting layer 50 away from the first light-emitting layer 30; and the light color of the first light-emitting layer 30 is blue, and the light color of the second light-emitting layer 50 is yellow. Applying a heating temperature greater than the glass transition temperature of the P-type doped sublayer (42) and less than the glass transition temperature of the N (41) type doped sublayer to the light-emitting panel can reduce the mobility of the P-type doped sublayer (42), adjust the yellow light of the second light-emitting layer 50 that is closer to the P-type doped sublayer (42), make the light color of the light-emitting panel biased towards blue, and thus increase the color temperature value of the light-emitting panel. Applying a glass transition temperature greater than the N-type doped sublayer (41) to the light-emitting panel can reduce the mobility of the P-type doped sublayer (42) and the N-type doped sublayer, and realize the color temperature adjustment of white light as a whole.

[0068] In one embodiment of the present method, optionally, the glass transition temperature of the P-type doped sublayer is greater than the glass transition temperature of the N-type doped sublayer; applying a heating temperature to the light-emitting panel to adjust the color temperature includes:

[0069] Applying a heating temperature to the light-emitting panel that is greater than the glass transition temperature of the N-type doped sublayer and less than the glass transition temperature of the P-type doped sublayer to reduce the mobility of the N-type doped sublayer and adjust the luminescent color of the light-emitting layer closer to the N-type doped sublayer;

[0070] Alternatively, a temperature greater than the glass transition temperature of the P-type doped sublayer is applied to the light emitting panel to reduce the mobility of the P-type doped sublayer and the N-type doped sublayer, thereby adjusting the color temperature of the white light.

[0071] Specifically, refer to Figure 2, the positive electrode is located on the side of the first light-emitting layer 30 away from the second light-emitting layer 50, and the negative electrode is located on the side of the second light-emitting layer 50 away from the first light-emitting layer 30; and the light color of the first light-emitting layer 30 is blue, and the light color of the second light-emitting layer 50 is yellow. Applying a heating temperature greater than the glass transition temperature of the N-type doped sublayer (41) and less than the glass transition temperature of the P-type doped sublayer (42) to the light-emitting panel can reduce the mobility of the N-type doped sublayer (41), adjust the blue light of the first light-emitting layer 30 that is closer to the N-type doped sublayer (41), make the light color of the light-emitting panel tend to yellow, and thus reduce the color temperature value of the light-emitting panel. Applying a glass transition temperature greater than the P-type doped sublayer (42) to the light-emitting panel can reduce the mobility of the P-type doped sublayer (42) and the N-type doped sublayer (41), and realize the color temperature adjustment of white light as a whole.

[0072] For example, the Tg of the N-type doped sublayer is 90°C, the Tg of the P-type doped sublayer is 110°C, and the Tg of the blue light emitting layer and the yellow light emitting layer is ≥130°C; when the temperature applied to the device is between 90-110°C, the efficiency of the N-type doped sublayer decreases, the mobility decreases, and the blue light is weak; when the temperature applied to the device is above 110°C, the mobility efficiency of the N-type doped sublayer and the P-type doped sublayer will both decrease, thereby achieving overall color temperature adjustment of white light.

[0073] On the basis of the above embodiment, optionally, the first light-emitting layer 30 and the doped sublayer (41) in the charge generation layer adjacent to the first light-emitting layer 30 can be set as the two film layers with the lowest glass transition temperature in the film layer, and then after applying a heating temperature to the light-emitting panel, only the main material of the doped sublayer (41) in the first light-emitting layer 30 and the charge generation layer adjacent to the first light-emitting layer 30 can be denatured, thereby further making the light color of the light-emitting panel close to the light color of the second light-emitting layer 50. Alternatively, the second light-emitting layer 50 and the doped sublayer (42) in the charge generation layer adjacent to the second light-emitting layer 50 can be set as the two film layers with the lowest glass transition temperature in the film layer, and then after applying a heating temperature to the light-emitting panel, only the main material of the doped sublayer (42) in the second light-emitting layer 50 and the charge generation layer adjacent to the second light-emitting layer 50 can be denatured, thereby further making the light color of the light-emitting panel close to the light color of the first light-emitting layer 30.

[0074] Figure 3 This is a schematic diagram of the structure of another light-emitting panel provided by an embodiment of the present invention, referring to Figure 3In one embodiment of the present method, the light-emitting panel may further include a first functional layer 91 and a second functional layer 92; the positive electrode is located on a side of the first light-emitting layer 30 away from the second light-emitting layer 50, and the negative electrode is located on a side of the second light-emitting layer 50 away from the first light-emitting layer 30; the first functional layer 91 is located at least one location between the first light-emitting layer 30 and the charge generation layer 40 and between the first light-emitting layer 30 and the positive electrode; the second functional layer 92 is located at least one location between the second light-emitting layer 50 and the charge generation layer 40 and between the second light-emitting layer 50 and the negative electrode; and the method for adjusting the color temperature of the light-emitting panel may further include:

[0075] Determining the glass transition temperatures of the first functional layer 91 and the second functional layer 92 in the light-emitting panel; wherein the first functional layer 91 and the second functional layer 92 have different glass transition temperatures;

[0076] A heating temperature greater than the glass transition temperature of at least one of the first functional layer 91 and the second light-emitting functional layer is applied to the light-emitting panel to modify the main material of at least one of the first functional layer 91 and the second functional layer 92 and adjust the color temperature.

[0077] Specifically, if the glass transition temperature of the first functional layer 91 is greater than the glass transition temperature of the second functional layer 92; a heating temperature greater than the glass transition temperature of the second functional layer 92 and less than the glass transition temperature of the first functional layer 91 is applied to the light-emitting panel to destroy the main material of the second functional layer 92 and adjust the luminous color of the second light-emitting layer 50; or, a glass transition temperature greater than the first functional layer 91 is applied to the light-emitting panel to destroy the main materials of the first functional layer 91 and the second functional layer 92, and the color temperature of the white light is adjusted.

[0078] If the glass transition temperature of the second functional layer 92 is greater than the glass transition temperature of the first functional layer 91; a heating temperature greater than the glass transition temperature of the first functional layer 91 and less than the glass transition temperature of the second functional layer 92 is applied to the light-emitting panel to destroy the main material of the first functional layer 91 and adjust the luminous color of the first light-emitting layer 30; or, a glass transition temperature greater than the second functional layer 92 is applied to the light-emitting panel to destroy the main materials of the first functional layer 91 and the second functional layer 92, and adjust the color temperature of the white light.

[0079] On the basis of the above embodiment, optionally, the first light-emitting layer 30, the doped sublayer (41) in the charge generation layer 40 adjacent to the first light-emitting layer 30, and the first functional layer 91 can be set as the three film layers with the lowest glass transition temperature in the film layer. Then, after applying heating temperature to the light-emitting panel, only the main materials of the first light-emitting layer 30, the doped sublayer (41) in the charge generation layer 40 adjacent to the first light-emitting layer 30, and the first functional layer 91 can be denatured, thereby further making the light color of the light-emitting panel close to the light color of the second light-emitting layer 50. Alternatively, the second light-emitting layer 50, the doped sublayer (42) in the charge generation layer 40 adjacent to the second light-emitting layer 50, and the second functional layer 92 can be set as the three film layers with the lowest glass transition temperature in the film layer. Then, after applying heating temperature to the light-emitting panel, only the main materials of the second light-emitting layer 50, the doped sublayer (42) in the charge generation layer 40 adjacent to the second light-emitting layer 50, and the second functional layer 92 can be denatured, thereby further making the light emission color of the light-emitting panel close to the light emission color of the first light-emitting layer 30.

[0080] In one embodiment of the present method, optionally, when the first functional layer 91 is located between the first light-emitting layer 30 and the positive electrode, the first functional layer 91 includes at least one of a first hole injection layer, a first hole transport layer, and a first electron blocking layer; when the first functional layer 91 is located between the first light-emitting layer 30 and the charge generation layer 40, the first functional layer 91 includes at least one of a first electron injection layer, a first electron transport layer, and a first hole blocking layer; applying a temperature greater than the glass transition temperature of the first functional layer 91 to the light-emitting panel to destroy the main material of the first functional layer 91 includes:

[0081] Applying a heating temperature greater than the glass transition temperature of at least one of the first hole injection layer, the first hole transport layer, and the first electron blocking layer to the light-emitting panel to destroy the host material of at least one of the first hole injection layer, the first hole transport layer, and the first electron blocking layer;

[0082] And / or, applying a heating temperature greater than the glass transition temperature of at least one of the first electron injection layer, the first electron transport layer and the first hole blocking layer to the light-emitting panel to destroy the main material of at least one of the first electron injection layer, the first electron transport layer and the first hole blocking layer.

[0083] Specifically, the glass transition temperatures of the first hole injection layer, the first hole transport layer, and the first electron blocking layer may be the same, partially the same, or completely different. The glass transition temperatures of the first electron injection layer, the first electron transport layer, and the first hole blocking layer may be the same, partially the same, or completely different.

[0084] In one embodiment of the present method, optionally, when the second functional layer 92 is located between the second light-emitting layer 50 and the charge generation layer 40, the second functional layer 92 includes at least one of a second hole injection layer, a second hole transport layer, and a second electron blocking layer; when the second functional layer 92 is located between the second light-emitting layer 50 and the second electrode layer, the second functional layer 92 includes at least one of a second electron injection layer, a second electron transport layer, and a second hole blocking layer; applying a temperature greater than the glass transition temperature of the second functional layer 92 to the light-emitting panel to destroy the main material of the second functional layer 92 includes:

[0085] Applying a heating temperature greater than the glass transition temperature of at least one of the second hole injection layer, the second hole transport layer, and the second electron blocking layer to the light-emitting panel to destroy the host material of at least one of the second hole injection layer, the second hole transport layer, and the second electron blocking layer;

[0086] And / or, applying a heating temperature greater than the glass transition temperature of at least one of the second electron injection layer, the second electron transport layer and the second hole blocking layer to the light-emitting panel to destroy the main material of at least one of the second electron injection layer, the second electron transport layer and the second hole blocking layer.

[0087] Specifically, the glass transition temperatures of the second hole injection layer, the second hole transport layer, and the second electron blocking layer may be the same, partially the same, or completely different. The glass transition temperatures of the second electron injection layer, the second electron transport layer, and the second hole blocking layer may be the same, partially the same, or completely different.

[0088] For example, the blue hole transport layer has a Tg of 90°C, the electron transport layer has a Tg of 100°C, the n-doped CGL layer has a Tg of 110°C, and the p-doped CGL layer has a Tg of 120°C; the yellow hole transport layer has a Tg of 130°C, and the electron transport layer has a Tg of 140°C. This approach limits the migration rate of the light-emitting layer by temperature. When a temperature of 90-100°C is applied, the migration rate of blue light holes decreases, and the blue light is weaker.

[0089] In one embodiment of this method, the light-emitting panel optionally includes at least three light-emitting layers emitting different colors; wherein the at least three light-emitting layers emitting different colors include a first light-emitting layer and a second light-emitting layer; a charge generation layer is provided between each two adjacent light-emitting layers; and the mixed light of all the light-emitting layers is white light. The method for adjusting the color temperature of the light-emitting panel further includes:

[0090] Determining the glass transition temperature of each light-emitting layer in the light-emitting panel, and the glass transition temperature of the N-type doped sublayer and the P-type doped sublayer in each charge generation layer;

[0091] A heating temperature is applied to the light-emitting panel according to the target color temperature, and the emission color of the corresponding number of light-emitting layers is adjusted.

[0092] Specifically, Figure 4 This is a schematic diagram of the structure of another light-emitting panel provided by an embodiment of the present invention, referring to Figure 4 , the light-emitting layer also includes a third light-emitting layer 80. For example, the light-emitting color of the first light-emitting layer 30 is red, the light-emitting color of the second light-emitting layer 50 is blue, and the light-emitting color of the third light-emitting layer 80 is green. The red light, blue light, and green light can be mixed to form white light. The glass transition temperature of the first light-emitting layer 30 can be set to be the lowest. After adjusting the red light of the first light-emitting layer 30, the light output color of the light-emitting panel is adjusted from white to cyan, or a color close to cyan. The glass transition temperature of the second light-emitting layer 50 can be set to be the lowest. After adjusting the blue light of the second light-emitting layer 50, the light output color of the light-emitting panel is adjusted from white to yellow, or a color close to yellow. The glass transition temperature of the third light-emitting layer 80 can be set to be the lowest. After adjusting the green light of the third light-emitting layer 80, the light output color of the light-emitting panel is adjusted from white to magenta, or a color close to magenta. The colors of both light-emitting layers can also be adjusted; for example, by adjusting the colors of the first light-emitting layer 30 and the second light-emitting layer 50, the light output color of the light-emitting panel can be adjusted from white to green, or a color close to green, and so on. This is not further elaborated here. The N-type doped sublayers in different charge generation layers 40 can be the same or different, and the P-type doped sublayers in different charge generation layers 40 can be the same or different, depending on actual needs. The glass transition temperature of the charge generation layer 40 can also be adjusted during color temperature adjustment.

[0093] Figure 5 This is a flow chart of another method for adjusting the color temperature of a light emitting panel provided by an embodiment of the present invention. Figure 5 , the method for adjusting the color temperature of the light-emitting panel includes:

[0094] S210. Determine the glass transition temperatures of the first light-emitting layer, the second light-emitting layer, and the N-type doped sublayer and the P-type doped sublayer in the charge generation layer in the light-emitting panel; wherein the first light-emitting layer and the second light-emitting layer have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures.

[0095] S220. Determine a color-changing region in the light-emitting panel according to a preset color-changing pattern; wherein the number of the preset color-changing patterns is at least one.

[0096] S230 , determining a heating temperature to be applied to each color-changing area according to the color temperature change corresponding to each color-changing pattern.

[0097] S240. Apply a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer, and the P-type doped sublayer to the light-emitting panel to modify the main material of at least one of the film layers and adjust the color temperature.

[0098] Specifically, before applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer, and the P-type doped sublayer to the light-emitting panel, the method further includes determining a color-changing region in the light-emitting panel based on a preset color-changing pattern; and determining the heating temperature applied to each color-changing region based on the color temperature change corresponding to each color-changing pattern. Color change and patterning are achieved by limiting Tg differences and applying external heat. The preset color-changing pattern may include a circle, an ellipse, a polygon, or other special shape. The color changes in different color-changing regions may be the same or different.

[0099] refer to Figure 2 The embodiment of the present invention further provides a light-emitting panel, comprising a first light-emitting layer 30, a second light-emitting layer 50, and a charge generation layer 40 located between the first light-emitting layer 30 and the second light-emitting layer 50; the charge generation layer 40 comprises an N-type doped sublayer and a P-type doped sublayer, and the first light-emitting layer 30 and the second light-emitting layer 50 emit different colors;

[0100] Among them, the first light-emitting layer 30 and the second light-emitting layer 50 have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures, so that after applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer 30, the second light-emitting layer 50, the N-type doped sublayer and the P-type doped sublayer to the light-emitting panel, the main material of at least one of the film layers is modified to adjust the color temperature.

[0101] Specifically, the glass transition temperature of the main material of the first light-emitting layer 30 is limited to be different from the glass transition temperature of the main material of the second light-emitting layer 50, and / or the glass transition temperature of the N-type doped sublayer and the glass transition temperature of the P-type doped sublayer in the charge generation layer 40 are limited to be different; by applying external heat, a heating temperature greater than the glass transition temperature of at least one film layer among the first light-emitting layer 30, the second light-emitting layer 50, the N-type doped sublayer and the P-type doped sublayer is applied to the light-emitting panel, causing the main material of the film layer with a lower glass transition temperature to be modified, and adjusting the color of light emitted by at least one light-emitting layer, thereby realizing the adjustment of the light output color of the light-emitting panel having at least two light-emitting layers connected in series, thereby improving the user experience.

[0102] Optional, reference Figure 3The light-emitting panel further includes: an anode, a cathode, a first functional layer 91, and a second functional layer 92. The anode is located on the side of the first light-emitting layer 30 away from the second light-emitting layer 50, and the cathode is located on the side of the second light-emitting layer 50 away from the first light-emitting layer 30. The first functional layer 91 is located at least one location between the first light-emitting layer 30 and the charge generation layer 40, and between the first light-emitting layer 30 and the anode. The second functional layer 92 is located at least one location between the second light-emitting layer 50 and the charge generation layer 40, and between the second light-emitting layer 50 and the cathode. The first functional layer 91 and the second functional layer 92 have different glass transition temperatures, so that applying a heating temperature greater than the glass transition temperature of at least one of the first functional layer 91 and the second light-emitting functional layer 92 to the light-emitting panel modifies the host material of at least one of the first functional layer 91 and the second functional layer 92, thereby adjusting the color temperature.

[0103] When the first functional layer 91 is located between the first light-emitting layer 30 and the positive electrode, the first functional layer 91 includes at least one layer of the first hole injection layer, the first hole transport layer and the first electron blocking layer; the glass transition temperature of at least one layer of the first hole injection layer, the first hole transport layer and the first electron blocking layer is different from the glass transition temperature of the second functional layer 92.

[0104] When the first functional layer 91 is located between the first light-emitting layer 30 and the charge generation layer 40, the first functional layer 91 includes at least one layer of a first electron injection layer, a first electron transport layer and a first hole blocking layer; the glass transition temperature of at least one layer of the first electron injection layer, the first electron transport layer and the first hole blocking layer is different from the glass transition temperature of the second functional layer 92.

[0105] When the second functional layer 92 is located between the second light-emitting layer 50 and the charge generation layer 40, the second functional layer 92 includes at least one of a second hole injection layer, a second hole transport layer and a second electron blocking layer; the glass transition temperature of at least one of the second hole injection layer, the second hole transport layer and the second electron blocking layer is different from the glass transition temperature of the first functional layer 91.

[0106] When the second functional layer 92 is located between the second light-emitting layer 50 and the second electrode layer, the second functional layer 92 includes at least one layer of a second electron injection layer, a second electron transport layer and a second hole blocking layer; the glass transition temperature of at least one layer of the second electron injection layer, the second electron transport layer and the second hole blocking layer is different from the glass transition temperature of the first functional layer 91.

[0107] refer to Figure 4The light-emitting panel includes at least three light-emitting layers that emit different colors. For example, the light-emitting layer also includes a third light-emitting layer 80. A charge generation layer 40 is located between each two adjacent light-emitting layers; the mixed light of all the light-emitting layers is white light. The first light-emitting layer 30 can emit red light, the second light-emitting layer 50 can emit blue light, and the third light-emitting layer 80 can emit green light. The red, blue, and green lights can be mixed to form white light. The glass transition temperature of each light-emitting layer in the light-emitting panel and the glass transition temperature of the N-type doped sublayer and the P-type doped sublayer in each charge generation layer can be determined; heating temperature is applied to the light-emitting panel according to the target color temperature to adjust the emission color of the corresponding number of light-emitting layers.

[0108] Note that the above are only preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments and may include many other equivalent embodiments without departing from the concept of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for adjusting the color temperature of a light-emitting panel, characterized in that: The light emitting panel includes a first light emitting layer, a second light emitting layer, and a charge generating layer located between the first light emitting layer and the second light emitting layer; The charge generation layer comprises an N-type doped sublayer and a P-type doped sublayer, and the first light-emitting layer and the second light-emitting layer emit light of different colors; The method for adjusting the color temperature of the light-emitting panel includes: Determining the glass transition temperature of each of the first light-emitting layer, the second light-emitting layer, and the N-type doped sublayer and the P-type doped sublayer in the charge generation layer in the light-emitting panel; wherein the first light-emitting layer and the second light-emitting layer have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures; applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer, and the P-type doped sublayer to the light-emitting panel to modify the main material of at least one of the layers and adjust the color temperature; If the glass transition temperature of the first light-emitting layer is greater than the glass transition temperature of the second light-emitting layer, applying a heating temperature to the light-emitting panel to adjust the color temperature includes: when adjusting the luminous color of the second light-emitting layer, applying a heating temperature greater than the glass transition temperature of the second light-emitting layer and less than the glass transition temperature of the first light-emitting layer to the light-emitting panel to destroy the main material of the second light-emitting layer; when adjusting the luminous colors of the second light-emitting layer and the first light-emitting layer, applying a heating temperature greater than the glass transition temperature of the first light-emitting layer to the light-emitting panel to destroy the main materials of the first light-emitting layer and the second light-emitting layer.

2. The method for adjusting the color temperature of a light-emitting panel according to claim 1, wherein: The light emitted by the first light-emitting layer and the light emitted by the second light-emitting layer are mixed to form white light; If the glass transition temperature of the second light-emitting layer is greater than the glass transition temperature of the first light-emitting layer, applying a heating temperature to the light-emitting panel to adjust the color temperature includes: When adjusting the light emitting color of the first light emitting layer, applying a heating temperature greater than the glass transition temperature of the first light emitting layer and less than the glass transition temperature of the second light emitting layer to the light emitting panel to destroy the host material of the first light emitting layer; When adjusting the color temperature of the overall white light, a temperature higher than the glass transition temperature of the second light-emitting layer is applied to the light-emitting panel to destroy the host materials of the first light-emitting layer and the second light-emitting layer.

3. The method for adjusting the color temperature of a light-emitting panel according to claim 1, wherein: If the glass transition temperature of the N-type doped sublayer is greater than the glass transition temperature of the P-type doped sublayer; Applying heating temperature to the light emitting panel to adjust the color temperature includes: When adjusting the luminescent color of the light-emitting layer closer to the P-type doped sublayer, applying a heating temperature greater than the glass transition temperature of the P-type doped sublayer and less than the glass transition temperature of the N-type doped sublayer to the light-emitting panel to reduce the mobility of the P-type doped sublayer; When adjusting the color temperature of white light, applying a temperature greater than the glass transition temperature of the N-type doped sublayer to the light emitting panel to reduce the mobility of the P-type doped sublayer and the N-type doped sublayer; If the glass transition temperature of the P-type doped sublayer is greater than the glass transition temperature of the N-type doped sublayer; applying a heating temperature to the light emitting panel to adjust the color temperature includes: When adjusting the luminescent color of the light-emitting layer closer to the N-type doped sublayer, applying a heating temperature greater than the glass transition temperature of the N-type doped sublayer and less than the glass transition temperature of the P-type doped sublayer to the light-emitting panel to reduce the mobility of the N-type doped sublayer; When adjusting the color temperature of white light, a temperature greater than the glass transition temperature of the P-type doped sublayer is applied to the light emitting panel to reduce the mobility of the P-type doped sublayer and the N-type doped sublayer.

4. The method for adjusting the color temperature of a light-emitting panel according to claim 1, wherein: The light-emitting panel comprises at least three light-emitting layers emitting different colors; wherein the at least three light-emitting layers emitting different colors include the first light-emitting layer and the second light-emitting layer; a charge generation layer is provided between each two adjacent light-emitting layers; mixed light from all the light-emitting layers is white light; and the method for adjusting the color temperature of the light-emitting panel further comprises: Determining the glass transition temperature of each light-emitting layer in the light-emitting panel, and the glass transition temperature of the N-type doped sublayer and the P-type doped sublayer in each charge generation layer; A heating temperature is applied to the light emitting panel according to a target color temperature, and the light emitting colors of the corresponding number of light emitting layers are adjusted.

5. The method for adjusting the color temperature of a light-emitting panel according to claim 1, wherein: Before applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer, and the P-type doped sublayer to the light-emitting panel, the method further includes: Determining a color-changing region in the light-emitting panel according to a preset color-changing pattern; wherein the number of the preset color-changing pattern is at least one; The heating temperature applied to each color-changing area is determined according to the color temperature change corresponding to each color-changing pattern.

6. A light-emitting panel, characterized in that: The invention comprises a first light-emitting layer, a second light-emitting layer, and a charge generation layer located between the first light-emitting layer and the second light-emitting layer; the charge generation layer comprises an N-type doped sublayer and a P-type doped sublayer, and the first light-emitting layer and the second light-emitting layer emit different colors; The first light-emitting layer and the second light-emitting layer have different glass transition temperatures, and / or the N-type doped sublayer and the P-type doped sublayer have different glass transition temperatures, so that after applying a heating temperature greater than the glass transition temperature of at least one of the first light-emitting layer, the second light-emitting layer, the N-type doped sublayer, and the P-type doped sublayer to the light-emitting panel, the main material of at least one of the layers is modified to adjust the color temperature; If the glass transition temperature of the first light-emitting layer is greater than the glass transition temperature of the second light-emitting layer, applying a heating temperature to the light-emitting panel to adjust the color temperature includes: when adjusting the luminous color of the second light-emitting layer, applying a heating temperature greater than the glass transition temperature of the second light-emitting layer and less than the glass transition temperature of the first light-emitting layer to the light-emitting panel to destroy the main material of the second light-emitting layer; when adjusting the luminous colors of the second light-emitting layer and the first light-emitting layer, applying a heating temperature greater than the glass transition temperature of the first light-emitting layer to the light-emitting panel to destroy the main materials of the first light-emitting layer and the second light-emitting layer.

7. The light emitting panel according to claim 6, wherein: Also includes: A positive electrode, a negative electrode, a first functional layer, and a second functional layer; the positive electrode is located on a side of the first light-emitting layer away from the second light-emitting layer, and the negative electrode is located on a side of the second light-emitting layer away from the first light-emitting layer; the first functional layer is located at least one location between the first light-emitting layer and the charge generation layer and between the first light-emitting layer and the positive electrode; the second functional layer is located at least one location between the second light-emitting layer and the charge generation layer and between the second light-emitting layer and the negative electrode; The first functional layer and the second functional layer have different glass transition temperatures, so that after applying a heating temperature greater than the glass transition temperature of at least one of the first functional layer and the second functional layer to the light-emitting panel, the main material of at least one of the first functional layer and the second functional layer is modified to adjust the color temperature.

8. The light emitting panel according to claim 7, wherein: When the first functional layer is located between the first light-emitting layer and the positive electrode, the first functional layer includes at least one of a first hole injection layer, a first hole transport layer, and a first electron blocking layer; the glass transition temperature of at least one of the first hole injection layer, the first hole transport layer, and the first electron blocking layer is different from the glass transition temperature of the second functional layer; When the first functional layer is located between the first light-emitting layer and the charge generation layer, the first functional layer includes at least one layer of a first electron injection layer, a first electron transport layer and a first hole blocking layer; the glass transition temperature of at least one layer of the first electron injection layer, the first electron transport layer and the first hole blocking layer is different from the glass transition temperature of the second functional layer.

9. The light emitting panel according to claim 7, wherein: When the second functional layer is located between the second light-emitting layer and the charge generation layer, the second functional layer includes at least one of a second hole injection layer, a second hole transport layer, and a second electron blocking layer; the glass transition temperature of at least one of the second hole injection layer, the second hole transport layer, and the second electron blocking layer is different from the glass transition temperature of the first functional layer; When the second functional layer is located between the second light-emitting layer and the negative electrode, the second functional layer includes at least one layer of a second electron injection layer, a second electron transport layer and a second hole blocking layer; the glass transition temperature of at least one layer of the second electron injection layer, the second electron transport layer and the second hole blocking layer is different from the glass transition temperature of the first functional layer.

10. The light emitting panel according to claim 7, wherein: The invention comprises at least three light-emitting layers emitting different colors; wherein the at least three light-emitting layers emitting different colors include the first light-emitting layer and the second light-emitting layer; a charge generation layer is provided between each two adjacent light-emitting layers; the mixed light of all the light-emitting layers is white light, and different light-emitting layers have different glass transition temperatures.

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