A control structure for independent control of visible light and infrared light

Abstract

The present invention relates to the technical field of electro-optical regulation, and particularly relates to a regulation structure for independent regulation of visible light and infrared light. The regulation structure includes an infrared regulation structure and a visible light regulation structure, and the infrared regulation structure and the visible light regulation structure are respectively arranged on both sides of a substrate that is permeable to visible light. The infrared regulation structure sequentially includes a reflection layer, an insulating layer, and a regulation layer along the direction away from the substrate. The visible light regulation structure sequentially includes a first electrode layer, a first color-changing layer, an electrolyte layer, a second color-changing layer, and a second electrode layer along the direction away from the substrate. The preparation material of the reflection layer includes a conductor and a semiconductor that have infrared reflection and visible light transmission. The preparation material of the regulation layer includes a conductor or a semiconductor that is infrared semi-transparent and visible light transmissive. The preparation materials of the first color-changing layer and the second color-changing layer are metal oxides. The embodiment of the present invention provides a regulation structure for independent regulation of visible light and infrared light, which can provide a regulation structure for flexibly controlling the infrared band and the visible band.

Description

Technical Field

[0001] The present invention relates to the technical field of electro-optical regulation, and particularly relates to a regulation structure for independent regulation of visible light and infrared light. Background Art

[0002] Electrochromism refers to the phenomenon that cations (such as hydrogen ions, lithium ions, aluminum ions, etc.) are embedded inside a material under the action of an external electric field, causing a reversible change in the valence component of the material, and thus resulting in a reversible change in the optical properties (such as transmittance, reflectance, absorbance, etc.) of the material. Electrochromic devices assembled from electrochromic materials have many applications in the fields of intelligence and energy conservation and emission reduction, such as regulation structures, anti-glare rearview mirrors, spacecraft thermal control systems, and electronic tags. According to the different regulated spectral ranges, electrochromic technologies are mainly divided into two categories: (1) Reversible regulation technology in the visible spectral region (380 - 780 nm); (2) Reversible regulation technology in the infrared spectral region (0.8 - 25 μm).

[0003] The electrochromic technology with reversible regulation in the visible spectral region macroscopically presents a reversible change in color, and is mainly applied in fields such as regulation structures, anti-glare rearview mirrors, and electronic tags. Among them, the color-changing layer is the core layer, and common materials include tungsten oxide, nickel oxide, vanadium oxide, molybdenum oxide, etc. The electrolyte layer provides the metal cations required for the color-changing reaction, and common materials include solid electrolyte materials such as lithium tantalate and lithium niobate, gels containing metal cations, and liquid electrolyte materials. The electrochromic technology with reversible regulation in the infrared spectral region is mainly applied in fields such as spacecraft thermal control, radiative cooling, and camouflage. Common materials include graphene, tungsten oxide, lithium titanate, polyaniline, etc. Among the above materials or devices, some devices composed of, for example, nickel oxide, vanadium oxide, molybdenum oxide, etc. can only achieve a change in the transmittance or reflectance in the visible spectral region and have no regulation ability for the infrared spectral region; others such as graphene can achieve the ability to regulate the transmittance in the visible spectral region and the emissivity in the infrared spectral region together.

[0004] So far, there is still a lack of a technology that can independently regulate the transmittance in the visible spectral region and the emissivity in the infrared spectral region.

[0005] Therefore, aiming at the above deficiencies, there is an urgent need for a regulation structure for independent regulation of visible light and infrared light. Summary of the Invention

[0006] The embodiment of the present invention provides a regulation structure for independent regulation of visible light and infrared light, which can provide a regulation structure for flexibly controlling the infrared band and the visible band.

[0007] An embodiment of the present invention provides a regulation structure for independent regulation of visible light and infrared light, including an infrared regulation structure and a visible light regulation structure. The infrared regulation structure and the visible light regulation structure are respectively arranged on both sides of a substrate that is permeable to visible light. The infrared regulation structure sequentially includes a reflective layer, an insulating layer, and a regulation layer in a direction away from the substrate. The visible light regulation structure sequentially includes a first electrode layer, a first color-changing layer, an electrolyte layer, a second color-changing layer, and a second electrode layer;

[0008] The first electrode layer, the second electrode layer, the reflective layer, and the regulation layer are all connected to a power source, and the power source provides adjustable positive or negative bias voltages for the first electrode layer, the second electrode layer, the reflective layer, and the regulation layer respectively;

[0009] The preparation material of the reflective layer includes a conductor and a semiconductor that have infrared reflection and visible light transmission. The preparation material of the regulation layer includes a conductor or a semiconductor that is infrared semi-transparent and visible light transmissive. When infrared light irradiates the regulation layer, the unreflected infrared light passes through the regulation layer, and an optical resonant cavity structure is formed between the regulation layer and the reflective layer. The optical resonant cavity is used to regulate the absorption of infrared light. By adjusting the voltage of the power source, the infrared transmittance and absorption rate of the regulation layer are changed to adjust the amount of infrared light entering the optical resonant cavity structure, and further adjust the infrared light emissivity of the regulation structure;

[0010] The preparation materials of the first color-changing layer and the second color-changing layer are metal oxides. By applying a voltage between the first electrode layer and the second electrode layer, ions in the electrolyte layer enter the first color-changing layer or the second color-changing layer to cause the first color-changing layer or the second color-changing layer to change color.

[0011] In a possible design, the preparation materials of the first electrode layer, the second electrode layer, the reflective layer, and the regulation layer include one or several combinations of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, silver-containing or other metal thin films, or graphene;

[0012] The preparation materials of the first color-changing layer and the second color-changing layer are one or several combinations of tungsten oxide, nickel oxide, vanadium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, yttrium oxide;

[0013] The preparation materials of the insulating layer include one or several combinations of silicon oxide, silicon nitride, silicon carbide, tungsten oxide, aluminum oxide, nickel oxide, vanadium oxide, beryllium oxide, magnesium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, yttrium oxide;

[0014] The preparation materials of the electrolyte layer include one or several combinations of lithium metal, lithium niobate, lithium fluoride, lithium borate, lithium aluminum fluoride, lithium oxide.

[0015] In a possible design, the thickness of the reflective layer is 10 to 1500 nanometers;

[0016] The thickness of the insulating layer is 10 to 1500 nanometers;

[0017] The thickness of the adjustment layer is 10 to 1500 nanometers;

[0018] The thickness of the first color-changing layer is 10 to 800 nanometers;

[0019] The thickness of the second color-changing layer is 10 to 800 nanometers;

[0020] The thickness of the electrolyte layer is 10 to 400 nanometers.

[0021] In a possible design, the preparation material of the adjustment layer includes a heat-treated conductor or semiconductor.

[0022] In a possible design, the voltage applied by the power supply to the adjustment layer is -8 to 0V or 0 to 8V.

[0023] In a possible design, the thickness of the reflective layer is 150 to 250 nm, and the thickness of the adjustment layer is 500 to 800 nm;

[0024] When the positive pole of the power supply is connected to the adjustment layer to apply a positive bias voltage, the infrared emissivity of the control structure increases. When the negative pole of the power supply is connected to the adjustment layer to apply a negative bias voltage, the infrared emissivity of the control structure decreases.

[0025] In a possible design, the thickness of the reflective layer is 150 to 250 nm, the thickness of the insulating layer is 150 to 250 nm, and the thickness of the adjustment layer is 45 to 80 nm;

[0026] When the positive pole of the power supply is connected to the adjustment layer to apply a positive bias voltage, the infrared emissivity of the control structure decreases. When the negative pole of the power supply is connected to the adjustment layer to apply a negative bias voltage, the infrared emissivity of the control structure increases.

[0027] In a possible design, the control structure is prepared by sequentially coating films on the substrate.

[0028] In a possible design, the conductivity of the reflective layer is 300 to 3000 S / cm, and the conductivity of the adjustment layer is 1×10 -3 ~2.5 S / cm.

[0029] In a possible design, the temperature of the heat treatment is 10 to 600 degrees Celsius, and the time is 10 to 600 minutes.

[0030] The present invention has at least the following beneficial effects compared with the prior art:

[0031] The regulation structure provided by the present invention includes an infrared regulation structure and a visible light regulation structure, and the infrared light and visible light of the regulation structure can be respectively regulated by a power source.

[0032] The infrared regulation structure provided by the present invention has three layers, which are a reflection layer, an insulating layer, and a regulation layer along the thickness direction. Both the reflection layer and the regulation layer are conductors or semiconductors with conductive ability. The reflection layer has the property of reflecting infrared light, and the regulation layer has infrared semi-transparent properties, which can both reflect part of the infrared light and allow part of the infrared light to pass through. When infrared light irradiates the regulation layer, part of the infrared light is reflected, and part of the infrared light passes through the regulation layer. The infrared light passing through the regulation layer oscillates in the optical resonance cavity structure between the reflection layer and the regulation layer. Through the oscillation effect of the optical resonance cavity structure, the infrared emissivity of the infrared regulation structure can be significantly increased. Further, the reflection layer and the regulation layer are respectively connected to the two electrodes of the power source, and the carrier concentration in the regulation layer is controlled by adjusting the voltage of the power source. The carrier concentration affects the infrared light transmittance of the regulation layer. Therefore, by adjusting the power source voltage, the infrared light transmittance of the regulation layer can be changed, and further the intensity of the infrared light entering the optical resonance cavity and the oscillation effect of the optical resonance cavity can be adjusted, achieving the effect of adjustable infrared light emissivity. Different effects are obtained when the regulation layer is connected to electrodes with different polarities. When the regulation layer is connected to the negative electrode, the carrier concentration is increased, and the infrared transmittance of the regulation layer is reduced; when the regulation layer is connected to the positive electrode, the carrier concentration is reduced, and the infrared transmittance of the regulation layer is increased.

[0033] The visible light regulation structure includes a first electrode layer, a first color-changing layer, an electrolyte layer, a second color-changing layer, and a second electrode layer. A voltage is applied between the first electrode layer and the second electrode layer to enable the ions in the electrolyte layer to enter the first color-changing layer or the second color-changing layer, thereby causing the first color-changing layer or the second color-changing layer to change color. The degree of color change can be adjusted by adjusting the voltage value. By changing the polarity of the power source connecting the first electrode layer and the second electrode layer, the ions in the electrolyte layer can be controlled to enter the first color-changing layer or the second color-changing layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0035] Figure 1 is a schematic cross-sectional view of a regulation structure for independent regulation of visible light and infrared light provided by an embodiment of the present invention;

[0036] Figure 2 is the emissivity curve of the infrared spectral region of the regulation structure provided in the first specific embodiment of the present invention;

[0037] Figure 3 is the transmittance curve of the visible spectral region of the regulation structure provided in the first specific embodiment of the present invention;

[0038] Figure 4 is the emissivity curve of the infrared spectral region of the regulation structure provided in the second specific embodiment of the present invention;

[0039] Figure 5 is the transmittance curve of the visible spectral region of the regulation structure provided in the second specific embodiment of the present invention;

[0040] Figure 6 is the emissivity curve of the infrared spectral region of the regulation structure provided in the third specific embodiment of the present invention;

[0041] Figure 7 is the transmittance curve of the visible spectral region of the regulation structure provided in the third specific embodiment of the present invention;

[0042] Figure 8 is the emissivity curve of the infrared spectral region of the regulation structure provided in the fourth specific embodiment of the present invention;

[0043] Figure 9 is the transmittance curve of the visible spectral region of the regulation structure provided in the fourth specific embodiment of the present invention;

[0044] Figure 10 is the emissivity curve of the infrared spectral region of the regulation structure provided in the fifth specific embodiment of the present invention;

[0045] Figure 11 is the transmittance curve of the visible spectral region of the regulation structure provided in the fifth specific embodiment of the present invention;

[0046] Figure 12 is the emissivity curve of the infrared spectral region of the regulation structure provided in the sixth specific embodiment of the present invention;

[0047] Figure 13 is the transmittance curve of the visible spectral region of the regulation structure provided in the sixth specific embodiment of the present invention;

[0048] Figure 14 is the emissivity curve of the infrared spectral region of the regulation structure provided in the seventh specific embodiment of the present invention;

[0049] Figure 15 is the transmittance curve of the visible spectral region of the regulation structure provided in the seventh specific embodiment of the present invention;

[0050] Figure 16It is the emissivity curve in the infrared spectral region of the regulation structure provided in the eighth specific embodiment of the present invention;

[0051] Figure 17 It is the transmittance curve in the visible spectral region of the regulation structure provided in the eighth specific embodiment of the present invention.

[0052] In the figure:

[0053] 1 - Substrate;

[0054] 2 - First electrode layer;

[0055] 3 - First color-changing layer;

[0056] 4 - Electrolyte layer;

[0057] 5 - Second color-changing layer;

[0058] 6 - Second electrode layer;

[0059] 7 - Reflective layer;

[0060] 8 - Insulating layer;

[0061] 9 - Regulation layer. Specific embodiments

[0062] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0063] In the description of the embodiments of the present invention, unless otherwise clearly specified and defined, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance; unless otherwise specified or stated, the term "plurality" means two or more; the terms "connection", "fixation", etc. should all be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, an integral connection, or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0064] In the description of this specification, it should be understood that the orientation terms such as "upper" and "lower" described in the embodiments of the present invention are described from the angles shown in the drawings and should not be construed as limiting the embodiments of the present invention. In addition, in the context, it should also be understood that when it is mentioned that an element is connected "above" or "below" another element, it can not only be directly connected "above" or "below" another element, but also be indirectly connected "above" or "below" another element through an intermediate element.

[0065] As Figure 1 shown, the embodiments of the present invention provide a regulation structure for independent regulation of visible light and infrared light, including an infrared regulation structure and a visible light regulation structure. The infrared regulation structure and the visible light regulation structure are respectively arranged on both sides of a substrate 1 that is visible light transmissive. The infrared regulation structure sequentially includes a reflective layer 7, an insulating layer 8, and a regulation layer 9 along the direction away from the substrate 1. The visible light regulation structure sequentially includes a first electrode layer 2, a first color-changing layer 3, an electrolyte layer 4, a second color-changing layer 5, and a second electrode layer 6 along the direction away from the substrate 1;

[0066] The first electrode layer 2, the second electrode layer 6, the reflective layer 7, and the regulation layer 9 are all connected to a power supply, and the power supply provides an adjustable positive or negative bias voltage for the first electrode layer 2, the second electrode layer 6, the reflective layer 7, and the regulation layer 9 respectively;

[0067] The preparation material of the reflective layer 7 includes a conductor and a semiconductor that have infrared reflection and visible light transmission. The preparation material of the regulation layer 9 includes a conductor or a semiconductor that is infrared semi-transparent and visible light transmissive. When infrared light irradiates the regulation layer 9, the unreflected infrared light passes through the regulation layer 9, and an optical resonant cavity structure is formed between the regulation layer 9 and the reflective layer 7. The optical resonant cavity is used to regulate the absorption of infrared light. By adjusting the voltage of the power supply, the infrared transmittance and absorption rate of the regulation layer 9 are changed to regulate the amount of infrared light entering the optical resonant cavity structure, and further regulate the infrared light emission rate of the regulation structure;

[0068] The preparation materials of the first color-changing layer 3 and the second color-changing layer 5 are metal oxides. By applying a voltage between the first electrode layer 2 and the second electrode layer 6, the ions in the electrolyte layer 4 enter the first color-changing layer 3 or the second color-changing layer 5 to cause the first color-changing layer 3 or the second color-changing layer 5 to change color.

[0069] The regulation structure provided by the present invention includes an infrared regulation structure and a visible light regulation structure, and can respectively regulate the infrared light and visible light of the regulation structure through a power supply.

[0070] The infrared adjustment structure provided by the present invention has three layers, which are a reflective layer 7, an insulating layer 8, and an adjustment layer 9 in the thickness direction. Both the reflective layer 7 and the adjustment layer 9 are conductors or semiconductors with electrical conductivity. The reflective layer 7 has the property of reflecting infrared light, and the adjustment layer 9 has infrared semi-transparent properties, which can both reflect part of the infrared light and allow part of the infrared light to pass through. When infrared light irradiates the adjustment layer 9, part of the infrared light is reflected, and part of the infrared light passes through the adjustment layer 9. The infrared light passing through the adjustment layer 9 oscillates in the optical resonant cavity structure between the reflective layer 7 and the adjustment layer 9. The oscillation effect of the optical resonant cavity structure can significantly increase the infrared emissivity of the infrared adjustment structure. Further, the reflective layer 7 and the adjustment layer 9 are respectively connected to two electrodes of a power supply. By adjusting the voltage of the power supply, the carrier concentration in the adjustment layer 9 is controlled. The carrier concentration affects the infrared light transmittance of the adjustment layer 9. Therefore, by adjusting the power supply voltage, the infrared light transmittance of the adjustment layer 9 can be changed, and further, the intensity of the infrared light entering the optical resonant cavity and the oscillation effect of the optical resonant cavity can be adjusted, achieving the effect of adjustable infrared light emissivity. Different effects are obtained when the adjustment layer 9 is connected to electrodes of different polarities. When the adjustment layer 9 is connected to the negative electrode, the carrier concentration increases, and the infrared transmittance of the adjustment layer 9 decreases; when the adjustment layer 9 is connected to the positive electrode, the carrier concentration decreases, and the infrared transmittance of the adjustment layer 9 increases.

[0071] The visible light adjustment structure includes a first electrode layer 2, a first color-changing layer 3, an electrolyte layer 4, a second color-changing layer 5, and a second electrode layer 6. A voltage is applied between the first electrode layer 2 and the second electrode layer 6 to cause ions in the electrolyte layer 4 to enter the first color-changing layer 3 or the second color-changing layer 5, thereby causing the first color-changing layer 3 or the second color-changing layer 5 to change color. The degree of color change can be adjusted by adjusting the voltage value. By changing the polarity of the power supply connecting the first electrode layer 2 and the second electrode layer 6, the ions in the electrolyte layer 4 can be controlled to enter the first color-changing layer 3 or the second color-changing layer 5.

[0072] The emissivity regulation of the infrared adjustment structure is related to the following four factors: a. The infrared semi-transmission performance of the adjustment layer 9; b. The thickness of the adjustment layer 9; c. The thickness of the resonant cavity; d. The carrier concentration of the adjustment layer 9.

[0073] In the present invention, different effects are obtained when the adjustment layer 9 is connected to electrodes of different polarities. When the adjustment layer 9 is connected to the negative electrode, the carrier concentration increases, and the infrared transmittance of the adjustment layer 9 increases; when the adjustment layer 9 is connected to the positive electrode, the carrier concentration decreases, and the infrared transmittance of the adjustment layer 9 decreases.

[0074] In some embodiments of the present invention, the preparation materials of the first electrode layer 2, the second electrode layer 6, the reflective layer 7, and the adjustment layer 9 include one or several combinations of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, silver-containing or other metal thin films, or graphene;

[0075] The preparation materials of the first color-changing layer 3 and the second color-changing layer 5 are one or a combination of several of tungsten oxide, nickel oxide, vanadium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, and yttrium oxide;

[0076] The preparation materials of the insulating layer 8 include one or a combination of several of silicon oxide, silicon nitride, silicon carbide, tungsten oxide, aluminum oxide, nickel oxide, vanadium oxide, beryllium oxide, magnesium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, and yttrium oxide;

[0077] The preparation materials of the electrolyte layer 4 include one or a combination of several of metallic lithium, lithium niobate, lithium fluoride, lithium borate, lithium aluminum fluoride, and lithium oxide.

[0078] In the embodiment, the adjusting layer 9 is a material with a carrier concentration that changes with the voltage. Specifically, after the structure is determined and the electrodes are connected, a voltage is applied, and the injection / extraction of electrons causes a change in the carrier concentration of the material.

[0079] In some embodiments of the present invention, the thickness of the reflective layer 7 is 10 to 1500 nanometers;

[0080] The thickness of the insulating layer 8 is 10 to 1500 nanometers;

[0081] The thickness of the adjusting layer 9 is 10 to 1500 nanometers;

[0082] The thickness of the first color-changing layer 3 is 10 to 800 nanometers;

[0083] The thickness of the second color-changing layer 5 is 10 to 800 nanometers;

[0084] The thickness of the electrolyte layer 4 is 10 to 400 nanometers.

[0085] In this embodiment, the thickness of the adjusting layer 9 affects the infrared transmittance of the adjusting layer 9 itself, and the transmittance of the adjusting layer 9 affects the oscillation effect of the optical resonator. The thickness of the insulating layer 8 affects the effect of the optical resonator structure, and the two even directly determine whether an optical resonator can be formed. Preferably, the thickness of the insulating layer 8 is 450 to 800 nm, and the thickness of the adjusting layer 9 is 40 to 800 nm.

[0086] In some embodiments of the present invention, the preparation materials of the adjusting layer 9 include a conductor or semiconductor that has been heat-treated.

[0087] In this embodiment, an infrared adjustment structure with different initial states can be prepared according to actual requirements. The initial state refers to the infrared emissivity when no voltage is applied. Without heat treatment, the emissivity of the initial state is a high emissivity state (0.81), and it becomes a low emissivity state (0.39) after applying a negative bias voltage; after heat treatment, the initial state is a low emissivity state (0.5), and it becomes a high emissivity state (0.81) after applying a positive bias voltage. The emissivity regulation range of the infrared adjustment structure provided by the present invention is greater than 0.42, the response time is less than 30 s, and the solar absorptance is less than 0.28. It should be noted that the above emissivity values are integral emissivities, which are obtained by integrating blackbody radiation (in the wavelength range of 0.25 - 25 μm).

[0088] In some embodiments of the present invention, the voltage applied by the power supply to the adjustment layer 9 is -8 to 0 V or 0 to 8 V.

[0089] In this embodiment, since the oscillation adjustment function of infrared light mainly comes from the optical resonant cavity, only a relatively low voltage is required to change the infrared transmittance of the adjustment layer 9. Preferably, the voltage applied by the power supply to the adjustment layer 9 is -3 to 0 V or 0 to 3 V.

[0090] In some embodiments of the present invention, the thickness of the reflective layer 7 is 150 - 250 nm, and the thickness of the adjustment layer 9 is 500 - 800 nm;

[0091] When the positive pole of the power supply is connected to the adjustment layer 9 to apply a positive bias voltage, the infrared emissivity of the adjustment structure increases. When the negative pole of the power supply is connected to the adjustment layer 9 to apply a negative bias voltage, the infrared emissivity of the adjustment structure decreases.

[0092] In this embodiment, the thickness of the adjustment layer 9 is relatively thick, and the infrared transmittance of the initial state is relatively low. At this time, when a positive bias voltage is applied to extract electrons and reduce the carrier concentration, the infrared transmittance of the adjustment layer 9 increases, the stronger the infrared light entering the optical resonant cavity, and the higher the infrared emissivity; when a negative bias voltage is applied to inject electrons and increase the carrier concentration, the infrared reflectivity of the adjustment layer 9 increases, the weaker the infrared light entering the optical resonant cavity, and the lower the infrared emissivity.

[0093] In some embodiments of the present invention, the thickness of the reflective layer 7 is 150 - 250 nm, the thickness of the insulating layer 8 is 150 - 250 nm, and the thickness of the adjustment layer 9 is 45 - 80 nm;

[0094] When the positive pole of the power supply is connected to the adjustment layer 9 to apply a positive bias voltage, the infrared emissivity of the adjustment structure decreases. When the negative pole of the power supply is connected to the adjustment layer 9 to apply a negative bias voltage, the infrared emissivity of the adjustment structure increases.

[0095] In this embodiment, the thickness of the adjustment layer 9 is relatively thin, and the infrared transmittance in the initial state is relatively high. At this time, most of the infrared light in the initial state passes through the adjustment layer 9, and the infrared light is mainly reflected by the reflection layer 7. Applying a positive bias voltage to extract electrons reduces the carrier concentration, and the further increase in the infrared transmittance of the adjustment layer 9 affects the infrared light oscillation effect of the optical resonator. Most of the infrared light is directly reflected by the reflection layer 7, resulting in a decrease in the infrared emissivity. Applying a negative bias voltage to inject electrons increases the carrier concentration, the infrared reflectivity of the adjustment layer 9 increases, and then the infrared light oscillation of the optical resonator is increased, and the infrared emissivity is increased.

[0096] In some embodiments of the present invention, the regulation structure is prepared by sequentially coating a film on the substrate 1.

[0097] In this embodiment, the substrate 1 can be a rigid substrate 1, such as glass, quartz, copper foil, aluminum sheet, silicon wafer; the substrate 1 can also be an organic substrate 1, such as polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyimide (PI), polyethylene, polypropylene, polycarbonate (PC), polyurethane, silicone resin. The film coating treatment includes one or a combination of evaporation coating, sputtering coating, and ion plating.

[0098] In some embodiments of the present invention, the conductivity of the reflection layer 7 is 300 - 3000 S / cm, and the conductivity of the adjustment layer 9 is 1×10 -3 ~2.5 S / cm.

[0099] In this embodiment, the conductivity of the reflection layer 7 is 300 - 3000 S / cm, enabling the reflection layer 7 to have excellent infrared reflection performance, and the conductivity of the adjustment layer 9 is 1×10 -3 ~2.5 S / cm, enabling the infrared transmittance of the adjustment layer 9 to be sensitive and have a large adjustment range under different voltages.

[0100] In some embodiments of the present invention, the temperature of the heat treatment is 10 - 600 degrees Celsius, and the time is 10 - 600 minutes. Specific Embodiment 1

[0102] For the substrate 1, the flexible transparent substrate 1 material polyethylene terephthalate (PET) is selected. The infrared adjustment structure is first prepared on the upper surface of the substrate 1 by vacuum coating. From the bottom up of the substrate 1, there are a reflection layer 7, an insulating layer 8, and an adjustment layer 9. The visible light adjustment structure is prepared on the lower surface of the substrate 1 by vacuum coating. From the bottom up of the substrate 1, there are a first electrode layer 2, a first color-changing layer 3, an electrolyte layer 4, a second color-changing layer 5, and a second electrode layer 6.

[0103] The thin films involved in the infrared adjustment structure and the visible light adjustment structure are prepared by magnetron sputtering technology. In the specific preparation process, the infrared adjustment structure is prepared first and then the visible light adjustment structure.

[0104] First, the surface of the substrate 1 is cleaned. It is ultrasonically cleaned with ethanol, acetone, and deionized water in sequence for 20 minutes each. Then, thin film deposition is carried out. For the infrared adjustment structure, a reflective layer 7, an insulating layer 8, and an adjustment layer 9 are sequentially deposited from the substrate 1.

[0105] The reflective layer 7 uses aluminum-doped zinc oxide material with a conductivity of 300 - 3000 S / cm and a thickness of 600 nanometers.

[0106] The insulating layer 8 is hafnium dioxide, an infrared transparent material and an infrared lossless material, with a thickness of 500 nanometers.

[0107] The adjustment layer 9 is generally indium tin oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, and the thickness is 10 - 400 nanometers.

[0108] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 400 nanometers.

[0109] The first color-changing layer 3 is tungsten oxide, with a thickness of 800 nanometers.

[0110] The electrolyte layer 4 is lithium tantalate, a material containing metal cations, with a thickness of 400 nanometers.

[0111] The second color-changing layer 5 is vanadium oxide. It should be particularly noted that the positions of the first color-changing layer 3 and the second color-changing layer 5 can be interchanged. The thickness of the second color-changing layer 5 is 400 nanometers.

[0112] After the adjustment structure is prepared, the above-mentioned independent regulation function can be achieved. In addition, heat treatment can be carried out to optimize the regulation function. The heat treatment can be carried out in vacuum, atmosphere, or other atmospheres. The heat treatment temperature is 200 degrees Celsius and the time is 400 minutes.

[0113] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage of 5V and the voltage application time starting from 60 seconds.

[0114] After the device is prepared, corresponding tests are carried out, and the test results are as Figure 2 and Figure 3 shown. Specific Embodiment 2

[0116] A new type of combined device is prepared on the substrate 1, and the substrate 1 is selected as rigid glass.

[0117] The thin films involved in the infrared adjustment structure and the visible light adjustment structure are prepared by magnetron sputtering technology. During the specific preparation process, the infrared adjustment structure is prepared first and then the visible light adjustment structure.

[0118] First, the surface of the substrate 1 is cleaned, and it is ultrasonically cleaned with ethanol, acetone, and deionized water in sequence for 20 minutes each. Then, thin film deposition is carried out. For the infrared adjustment structure, the reflective layer 7, the insulating layer 8, and the adjustment layer 9 are deposited on the substrate 1 in sequence.

[0119] The reflective layer 7 uses aluminum-doped zinc oxide material with a conductivity of 3000 S / cm and a thickness of 600 nanometers.

[0120] The insulating layer 8 is hafnium dioxide, an infrared transparent material and an infrared lossless material, with a thickness of 400 nanometers.

[0121] The adjustment layer 9 is generally indium tin oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, and the thickness is 400 nanometers.

[0122] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 400 nanometers.

[0123] The first color-changing layer 3 is tungsten oxide, with a thickness of 300 nanometers.

[0124] The electrolyte layer 4 is lithium tantalate, a material containing metal cations, with a thickness of 5000 nanometers.

[0125] The second color-changing layer 5 is nickel oxide. It should be particularly noted that the positions of the first color-changing layer 3 and the second color-changing layer 5 can be interchanged. The thickness of the second color-changing layer 5 is 200 nanometers.

[0126] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage range of 1 V and a voltage application time of 10 seconds.

[0127] After the device is fabricated, corresponding tests are carried out, and the test results are as shown in Figure 4 and Figure 5 shown. Specific Embodiment 3

[0129] A novel combined device is fabricated on a flexible substrate 1, and the substrate 1 is selected as polyethylene terephthalate.

[0130] The thin films involved in the infrared adjustment structure and the visible light adjustment structure are prepared by vacuum electron beam evaporation. In the specific preparation process, the infrared adjustment structure is prepared first and then the visible light adjustment structure is prepared.

[0131] First, the surface of the substrate 1 is cleaned, and it is ultrasonically cleaned with ethanol, acetone, and deionized water in sequence for 20 minutes each. Then, thin film deposition is carried out. For the infrared adjustment structure, the reflective layer 7, the insulating layer 8, and the adjustment layer 9 are deposited on the substrate 1 in sequence.

[0132] The reflective layer 7 uses aluminum-doped zinc oxide material with a conductivity of 3000 S / cm and a thickness of 600 nm.

[0133] The insulating layer 8 is hafnium dioxide, an infrared-transparent material and an infrared-lossless material, with a thickness of 800 nm.

[0134] The adjustment layer 9 is generally indium tin oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, and the thickness is 100 nm.

[0135] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 100 nm.

[0136] The first electrochromic layer 3 is tungsten oxide, with a thickness of 100 nm.

[0137] The electrolyte layer 4 is lithium tantalate, a material containing metal cations, with a thickness of 600 nm.

[0138] The second electrochromic layer 5 is nickel oxide. It should be particularly noted that the positions of the first electrochromic layer 3 and the second electrochromic layer 5 can be interchanged. The thickness of the second electrochromic layer 5 is 300 nm.

[0139] After the composite device structure is fabricated, the above-mentioned independent regulation functions can be achieved. Additionally, heat treatment can be performed to optimize the regulation functions, and the heat treatment can be carried out in a vacuum, in the atmosphere, or in other atmospheres. The heat treatment temperature is 300 °C, and the time is 10 - 400 minutes.

[0140] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage range of 8 V, and the voltage application time is from 10 - 600 seconds.

[0141] After the device is fabricated, corresponding tests are carried out, and the test results are as Figure 6 and Figure 7 shown. Specific Embodiment 4

[0143] A novel composite device is fabricated on a rigid substrate 1, and the selected material is glass.

[0144] The thin films involved in the infrared adjustment structure and the visible light adjustment structure are prepared by magnetron sputtering technology. During the specific preparation process, the infrared adjustment structure is prepared first and then the visible light adjustment structure.

[0145] First, the surface of the substrate 1 is cleaned, and it is ultrasonically cleaned with ethanol, acetone, and deionized water for 20 minutes each in sequence. Then, thin film deposition is carried out. For the infrared adjustment structure, the reflective layer 7, the insulating layer 8, and the adjustment layer 9 are deposited on the substrate 1 in sequence.

[0146] The reflective layer 7 uses a fluorine-doped tin oxide material with a conductivity of 300 - 3000 S / cm and a thickness of 100 nanometers.

[0147] The insulating layer 8 is hafnium dioxide, an infrared-transparent material and an infrared-lossless material, with a thickness of 100 nanometers.

[0148] The adjustment layer 9 is generally indium tin oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, with a thickness of 400 nanometers.

[0149] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 250 nanometers.

[0150] The first electrochromic layer 3 is tungsten oxide, with a thickness of 700 nanometers.

[0151] The electrolyte layer 4 is lithium tantalate, a material containing metal cations, with a thickness of 500 nanometers.

[0152] The second electrochromic layer 5 is nickel oxide. It should be particularly noted that the positions of the first electrochromic layer 3 and the second electrochromic layer 5 can be interchanged. The thickness of the second electrochromic layer 5 is 800 nanometers.

[0153] After the combined device structure is prepared, the above-mentioned independent regulation functions can be achieved. In addition, heat treatment can be carried out to optimize the regulation function, and the heat treatment can be carried out in vacuum, air or other atmospheres. The heat treatment temperature is 400 degrees Celsius and the time is 400 minutes.

[0154] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage range of 8V and the voltage application time ranging from 10 - 600 seconds.

[0155] After the device is prepared, corresponding tests are carried out, and the test results are as Figure 8 and Figure 9 shown. Specific Embodiment 5

[0157] A new type of combined device is prepared on a rigid substrate 1, and the selected material is glass.

[0158] The thin films involved in the infrared adjustment structure and the visible light adjustment structure are prepared by magnetron sputtering technology. During the specific preparation process, the infrared adjustment structure is prepared first and then the visible light adjustment structure.

[0159] First, the surface of the substrate 1 is cleaned, and it is ultrasonically cleaned with ethanol, acetone, and deionized water for 20 minutes each in sequence. Then, thin film deposition is carried out. For the infrared adjustment structure, the reflective layer 7, the insulating layer 8, and the adjustment layer 9 are deposited on the substrate 1 in sequence.

[0160] The reflective layer 7 uses a fluorine-doped tin oxide material with a conductivity of 300 - 3000 S / cm and a thickness of 600 nanometers.

[0161] The insulating layer 8 is silica, an infrared-transparent material and an infrared-lossless material, with a thickness of 600 nanometers.

[0162] The adjustment layer 9 is generally indium tin oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, with a thickness of 400 nanometers.

[0163] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 400 nanometers.

[0164] The first electrochromic layer 3 is tungsten oxide, with a thickness of 100 nanometers.

[0165] The electrolyte layer 4 is lithium tantalate, a material containing metal cations, with a thickness of 10 nanometers.

[0166] The second electrochromic layer 5 is nickel oxide. It should be particularly noted that the positions of the first electrochromic layer 3 and the second electrochromic layer 5 can be interchanged. The thickness of the second electrochromic layer 5 is 100 nanometers.

[0167] After the combined device structure is fabricated, the above-mentioned independent regulation functions can be achieved. Additionally, heat treatment can be carried out to optimize the regulation functions, and the heat treatment can be performed in a vacuum, in the atmosphere, or in other atmospheres. The heat treatment temperature is 500 degrees Celsius and the time is 100 minutes.

[0168] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage range of 8V and the voltage application time ranging from 100 seconds.

[0169] After the device is fabricated, corresponding tests are carried out, and the test results are as Figure 10 and Figure 11 shown. Specific Embodiment Six

[0171] A new type of combined device is fabricated on a rigid substrate 1, and the selected material is glass.

[0172] The thin films involved in the infrared adjustment structure and the visible light adjustment structure are fabricated using magnetron sputtering technology. During the specific fabrication process, the infrared adjustment structure is fabricated first and then the visible light adjustment structure.

[0173] First, the surface of the substrate 1 is cleaned, and it is ultrasonically cleaned with ethanol, acetone, and deionized water for 20 minutes each in sequence. Then, thin film deposition is carried out. For the infrared adjustment structure, the reflective layer 7, the insulating layer 8, and the adjustment layer 9 are deposited on the substrate 1 in sequence.

[0174] The reflective layer 7 uses a fluorine-doped tin oxide material with a conductivity of 300 - 3000 S / cm and a thickness of 100 nanometers.

[0175] The insulating layer 8 is hafnium dioxide, an infrared transparent material and an infrared lossless material, with a thickness of 600 nanometers.

[0176] The adjustment layer 9 is generally indium tin oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, with a thickness of 400 nanometers.

[0177] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 10 - 400 nanometers.

[0178] The first electrochromic layer 3 is tungsten oxide, with a thickness of 800 nanometers.

[0179] The electrolyte layer 4 is lithium tantalate, a material containing metal cations, with a thickness of 100 nanometers.

[0180] The second electrochromic layer 5 is nickel oxide. It should be noted that the positions of the first electrochromic layer 3 and the second electrochromic layer 5 can be interchanged. The thickness of the second electrochromic layer 5 is 150 nanometers.

[0181] After the combined device structure is fabricated, the above-mentioned independent regulation functions can be achieved. Additionally, heat treatment can be performed to optimize the regulation functions, and the heat treatment can be carried out in a vacuum, in the atmosphere, or in other atmospheres. The heat treatment temperature is 600 degrees Celsius and the time is 100 minutes.

[0182] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage range of 6V and the voltage application time ranging from 60 seconds.

[0183] After the device is fabricated, corresponding tests are carried out, and the test results are as Figure 12 and Figure 13 shown. Specific Embodiment Seven

[0185] A novel combined device is fabricated on a rigid substrate 1, and the selected material is glass.

[0186] The thin films involved in the infrared adjustment structure and the visible light adjustment structure are prepared by magnetron sputtering technology. During the specific preparation process, the infrared adjustment structure is prepared first and then the visible light adjustment structure.

[0187] First, the surface of the substrate 1 is cleaned, and it is ultrasonically cleaned with ethanol, acetone, and deionized water for 20 minutes each in sequence. Then, thin film deposition is carried out. For the infrared adjustment structure, the reflective layer 7, the insulating layer 8, and the adjustment layer 9 are deposited on the substrate 1 in sequence.

[0188] The reflective layer 7 uses a fluorine-doped tin oxide material with a conductivity of 300 - 3000 S / cm and a thickness of 450 nanometers.

[0189] The insulating layer 8 is tungsten oxide, an infrared-transparent material and an infrared-lossless material, with a thickness of 550 nanometers.

[0190] The adjustment layer 9 is generally aluminum-doped zinc oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, with a thickness of 350 nanometers.

[0191] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 350 nanometers.

[0192] The first electrochromic layer 3 is tungsten oxide, with a thickness of 250 nanometers.

[0193] The electrolyte layer 4 is lithium tantalate, a material containing metal cations, with a thickness of 150 nanometers.

[0194] The second electrochromic layer 5 is nickel oxide. It should be noted that the positions of the first electrochromic layer 3 and the second electrochromic layer 5 can be interchanged. The thickness of the second electrochromic layer 5 is 150 nanometers.

[0195] After the composite device structure is fabricated, the above-mentioned independent regulation functions can be achieved. Additionally, heat treatment can be carried out to optimize the regulation functions, and the heat treatment can be performed in a vacuum, in the atmosphere, or in other atmospheres. The heat treatment temperature is 450 degrees Celsius and the time is 150 minutes.

[0196] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage range of 7V, and the voltage application time ranges from 10 - 600 seconds.

[0197] After the device is fabricated, corresponding tests are carried out, and the test results are as Figure 14 and Figure 15 shown. Specific Embodiment VIII

[0199] A new type of composite device is fabricated on a rigid substrate 1, and the selected material is glass.

[0200] The thin films involved in the infrared adjustment structure are prepared by magnetron sputtering technology, and the thin films involved in the visible light adjustment structure are prepared by resistance evaporation technology.

[0201] First, the surface of the substrate 1 is cleaned, and it is ultrasonically cleaned with ethanol, acetone, and deionized water for 20 minutes each in sequence. Then, thin film deposition is carried out. For the infrared adjustment structure, the reflective layer 7, the insulating layer 8, and the adjustment layer 9 are deposited on the substrate 1 in sequence.

[0202] The reflective layer 7 uses an aluminum-doped zinc oxide material with a conductivity of 300 - 3000 S / cm and a thickness of 450 nanometers.

[0203] The insulating layer 8 is tungsten oxide, an infrared transparent material and an infrared lossless material, with a thickness of 650 nanometers.

[0204] The adjustment layer 9 is generally tin-doped indium oxide, and the conductivity of this layer is 1×10 -3 ~2.5 S / cm, with a thickness of 250 nanometers.

[0205] For the visible light adjustment structure, indium tin oxide is selected as the material for both the first electrode layer 2 and the second electrode layer 6, with a thickness of 350 nanometers.

[0206] The first electrochromic layer 3 is tungsten oxide, with a thickness of 650 nanometers.

[0207] The electrolyte layer 4 is lithium niobate, a material containing metal cations, with a thickness of 350 nanometers.

[0208] The second electrochromic layer 5 is vanadium oxide. It should be particularly noted that the positions of the first electrochromic layer 3 and the second electrochromic layer 5 can be interchanged. The thickness of the second electrochromic layer 5 is 150 nanometers.

[0209] After the combined device structure is prepared, the above-mentioned independent regulation functions can be achieved. Additionally, heat treatment can be carried out to optimize the regulation function, and the heat treatment can be performed in a vacuum, in the atmosphere, or in other atmospheres. The heat treatment temperature is 150 degrees Celsius and the time is 400 minutes.

[0210] The external power supply can be selected from a simple alkaline battery to a complex electrochemical workstation, with a voltage range of 4V and the voltage application time starting from 15 seconds.

[0211] After the device is prepared, corresponding tests are carried out, and the test results are as Figure 16 and Figure 17 shown.

[0212] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A control structure for independent control of visible light and infrared light, characterized in that, it includes an infrared adjustment structure and a visible light adjustment structure. The infrared adjustment structure and the visible light adjustment structure are respectively arranged on both sides of a substrate that is transparent to visible light. The infrared adjustment structure sequentially includes a reflection layer, an insulating layer, and an adjustment layer along the direction away from the substrate. The visible light adjustment structure sequentially includes a first electrode layer, a first color-changing layer, an electrolyte layer, a second color-changing layer, and a second electrode layer along the direction away from the substrate; the first electrode layer, the second electrode layer, the reflection layer, and the adjustment layer are all connected to a power supply, and the power supply provides adjustable positive or negative bias voltages for the first electrode layer, the second electrode layer, the reflection layer, and the adjustment layer respectively; the preparation material of the reflection layer includes a conductor and a semiconductor that have infrared reflection and visible light transmission. The preparation material of the adjustment layer includes a conductor or a semiconductor that is infrared semi-transparent and visible light transmissive. When infrared light irradiates the adjustment layer, the unreflected infrared light passes through the adjustment layer, and an optical resonant cavity structure is formed between the adjustment layer and the reflection layer. The optical resonant cavity is used to adjust the absorption of infrared light. By adjusting the voltage of the power supply, the infrared transmittance and absorption rate of the adjustment layer are changed to adjust the amount of infrared light entering the optical resonant cavity structure, and further adjust the infrared light emission rate of the control structure; the preparation materials of the first color-changing layer and the second color-changing layer are metal oxides. By applying a voltage between the first electrode layer and the second electrode layer, ions in the electrolyte layer enter the first color-changing layer or the second color-changing layer to cause the first color-changing layer or the second color-changing layer to change color.

2. The control structure according to claim 1, characterized in that, the preparation materials of the first electrode layer, the second electrode layer, the reflection layer, and the adjustment layer include one or several combinations of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, metal thin film, or graphene; the preparation materials of the first color-changing layer and the second color-changing layer are one or several combinations of tungsten oxide, nickel oxide, vanadium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, yttrium oxide; the preparation materials of the insulating layer include one or several combinations of silicon oxide, silicon nitride, silicon carbide, tungsten oxide, aluminum oxide, nickel oxide, vanadium oxide, beryllium oxide, magnesium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, yttrium oxide; the preparation materials of the electrolyte layer include one or several combinations of lithium metal, lithium niobate, lithium fluoride, lithium borate, lithium aluminum fluoride, lithium oxide.

3. The control structure according to claim 1, characterized in that, the thickness of the reflection layer is 10 to 1500 nanometers; the thickness of the insulating layer is 10 to 1500 nanometers; the thickness of the adjustment layer is 10 to 1500 nanometers; the thickness of the first color-changing layer is 10 to 800 nanometers; the thickness of the second color-changing layer is 10 to 800 nanometers; the thickness of the electrolyte layer is 10 to 400 nanometers.

4. The control structure according to claim 1, characterized in that, The preparation material of the adjustment layer includes a conductor or semiconductor that has been heat-treated.

5. The regulation structure according to claim 1, wherein, the voltage applied by the power supply to the adjustment layer is -8 to 0 V or 0 to 8 V.

6. The regulation structure according to claim 1, wherein, the thickness of the reflection layer is 150 to 250 nm, and the thickness of the adjustment layer is 500 to 800 nm; when the positive electrode of the power supply is connected to the adjustment layer to apply a positive bias voltage, the infrared emissivity of the regulation structure increases, and when the negative electrode of the power supply is connected to the adjustment layer to apply a negative bias voltage, the infrared emissivity of the regulation structure decreases.

7. The regulation structure according to claim 1, wherein, the thickness of the reflection layer is 150 to 250 nm, the thickness of the insulating layer is 150 to 250 nm, and the thickness of the adjustment layer is 45 to 80 nm; when the positive electrode of the power supply is connected to the adjustment layer to apply a positive bias voltage, the infrared emissivity of the regulation structure decreases, and when the negative electrode of the power supply is connected to the adjustment layer to apply a negative bias voltage, the infrared emissivity of the regulation structure increases.

8. The regulation structure according to claim 1, wherein, the regulation structure is prepared by sequentially coating films on the substrate.

9. The regulation structure according to claim 1, wherein, The conductivity of the reflection layer is 300 to 3000 S / cm, and the conductivity of the adjustment layer is 1×10 -3 ~2.5 S / cm.

10. The regulation structure according to claim 4, wherein, the temperature of the heat treatment is 10 to 600 degrees Celsius, and the time is 10 to 600 minutes.

Images