A flexible infrared detector with a compound eye structure, its preparation method and application

Abstract

The present invention belongs to the technical field of optoelectronic devices, and particularly relates to a compound-eye structure flexible infrared detector, a preparation method thereof, and an application. In the present invention, a two-dimensional semiconductor layer and a zero-dimensional semiconductor layer which are stacked form a low-dimensional semiconductor heterojunction. By utilizing the large Young's modulus and high stability under stress of the low-dimensional semiconductor heterojunction, the stability performance of the flexible detector is improved; through effective coupling with a curved micro-lens, a compound-eye structure flexible infrared detector with high stability, wide-spectrum detection, large linear dynamic range, and high sensitivity to moving targets is obtained.

Description

Technical Field

[0001] The present invention belongs to the technical field of optoelectronic devices, and particularly relates to a compound-eye structure flexible infrared detector, a preparation method thereof, and an application thereof. Background Art

[0002] A compound-eye structure detector is a detector with a structure similar to that of an insect compound eye. It belongs to bionic optoelectronic devices and has advantages such as a large field of view, small distortion, high time resolution, light weight, sensitive detection of moving targets, and infinite depth of field.

[0003] The field of view of traditional compound-eye structure detectors based on flat front-end microlenses and flat imaging systems is narrow, and it is difficult to reproduce the superior imaging performance of biological compound eyes. In recent years, with the iteration of optical technologies, curved microlenses with adjustable focal lengths have been developed, and their field of view can reach 31° - 162°. Therefore, artificial compound-eye imaging systems based on curved microlenses have received extensive attention.

[0004] The curved microlens structure requires the detector to work stably on a curved structure or a flexible substrate. However, traditional semiconductor materials have a small Young's modulus and are prone to stress fracture on a curved structure or a flexible substrate, thereby reducing the stability of the compound-eye structure detector. Summary of the Invention

[0005] The purpose of the present invention is to provide a compound-eye structure flexible infrared detector, a preparation method thereof, and an application thereof. The compound-eye structure flexible infrared detector provided by the present invention has high stability.

[0006] To achieve the above purpose, the present invention provides the following technical solutions:

[0007] The present invention provides a compound-eye structure flexible infrared detector, including an electrode module and a curved microlens covering the electrode module;

[0008] The electrode module includes a flexible substrate and a plurality of mutually parallel metal bottom electrodes and a plurality of mutually parallel top electrodes sequentially arranged on the flexible substrate;

[0009] The plurality of metal bottom electrodes and the plurality of top electrodes are vertically distributed to form a network structure;

[0010] A semiconductor heterojunction is provided at the contact position of the metal bottom electrode and the top electrode;

[0011] The semiconductor heterojunction includes a two-dimensional semiconductor layer and a zero-dimensional semiconductor layer stacked sequentially from bottom to top;

[0012] The curved microlens is provided with a plurality of protrusions; the distribution mode of the protrusions is the same as the distribution mode of the semiconductor heterojunction.

[0013] Preferably, the number of the plurality of metal bottom electrodes is 4 to 16;

[0014] The interval between two adjacent metal bottom electrodes is 0.5 to 2.5 mm.

[0015] Preferably, the metal bottom electrode includes a titanium metal layer and a gold metal layer which are stacked in sequence from bottom to top;

[0016] The thickness of the titanium metal layer is 20 to 30 nm; the thickness of the gold metal layer is 60 to 80 nm.

[0017] Preferably, the number of the plurality of top electrodes is 4 to 16;

[0018] The interval between two adjacent top electrodes is 0.5 to 2.5 mm;

[0019] The thickness of the top electrode is 200 to 220 nm.

[0020] Preferably, the material of the top electrode includes indium tin oxide.

[0021] Preferably, the material of the two-dimensional semiconductor layer includes one or more of zinc oxide, titanium dioxide, graphene, and molybdenum disulfide;

[0022] The thickness of the two-dimensional semiconductor layer is 180 to 200 nm.

[0023] Preferably, the material of the zero-dimensional semiconductor layer includes lead sulfide quantum dots 、 mercury telluride quantum dots, lead selenide quantum dots, and lead telluride quantum dots;

[0024] The thickness of the zero-dimensional semiconductor layer is 340 to 360 nm.

[0025] Preferably, the material of the curved microlens includes polydimethylsiloxane;

[0026] The radius of curvature of each convex is 0.5 to 1.25 mm.

[0027] The present invention also provides a preparation method of the compound-eye structure flexible infrared detector according to the above technical solution, including the following steps:

[0028] Prepare a plurality of metal bottom electrodes on the surface of the flexible substrate;

[0029] Prepare a plurality of semiconductor heterojunctions on the contact regions of the plurality of metal bottom electrodes and the top electrodes;

[0030] Prepare a plurality of top electrodes on the plurality of semiconductor heterojunctions to obtain an electrode module;

[0031] Combining the curved micro-lens and the electrode module to obtain the compound-eye structure flexible infrared detector.

[0032] The present invention also provides an application of the compound-eye structure flexible infrared detector described in the above technical solution or the compound-eye structure flexible infrared detector prepared by the preparation method described in the above technical solution in bionic optoelectronic devices.

[0033] The present invention provides a compound-eye structure flexible infrared detector, including an electrode module and a curved micro-lens covering the electrode module; the electrode module includes a flexible substrate and a plurality of mutually parallel metal bottom electrodes and a plurality of mutually parallel top electrodes sequentially arranged on the flexible substrate; the plurality of metal bottom electrodes and the plurality of top electrodes are vertically distributed to form a mesh structure; a semiconductor heterojunction is arranged at the contact position of the metal bottom electrode and the top electrode; the semiconductor heterojunction includes a two-dimensional semiconductor layer and a zero-dimensional semiconductor layer stacked from bottom to top in sequence; the curved micro-lens is provided with a plurality of protrusions; the distribution mode of the protrusions is the same as the distribution mode of the semiconductor heterojunction. In the present invention, the stacked two-dimensional semiconductor layer and zero-dimensional semiconductor layer form a low-dimensional semiconductor heterojunction. By using the large Young's modulus and high stability under stress of the low-dimensional semiconductor heterojunction, the stability performance of the flexible detector is improved; through effective coupling with the curved micro-lens, a compound-eye structure flexible infrared detector with high stability, wide-spectrum detection, large linear dynamic range and high-sensitivity detection of moving targets is obtained. Description of the Drawings

[0034] Figure 1 It is a schematic cross-sectional structure diagram of the electrode module obtained in Example 1, where 1 - flexible substrate, 2 - metal bottom electrode, 3 - two-dimensional zinc oxide semiconductor layer, 4 - zero-dimensional lead sulfide quantum dot semiconductor layer, 5 - indium tin oxide top electrode;

[0035] Figure 2 It is a top view of the electrode module obtained in Example 1, where 1 - flexible substrate, 2 - metal bottom electrode, 5 - indium tin oxide top electrode, 6 - semiconductor heterojunction;

[0036] Figure 3 It is a schematic diagram of the preparation process of the curved micro-lens provided by the present invention;

[0037] Figure 4 It is a schematic diagram of the process of combining the curved micro-lens and the electrode module provided by the present invention;

[0038] Figure 5 It is a spectral response diagram of the compound-eye structure flexible infrared detector obtained in Example 1;

[0039] Figure 6 It is a linear dynamic range diagram of the compound-eye structure flexible infrared detector obtained in Example 1;

[0040] Figure 7 It is the transient response test diagram of the compound-eye-structured flexible infrared detector obtained in Example 1;

[0041] Figure 8 It is the stability test diagram of the compound-eye-structured flexible infrared detector obtained in Example 1;

[0042] Figure 9 It is the three-dimensional diagram of the photocurrent value of the compound-eye-structured flexible infrared detector obtained in Example 1 under illumination. Specific implementation manners

[0043] The present invention provides a compound-eye-structured flexible infrared detector, which includes an electrode module and a curved microlens covering the electrode module;

[0044] The electrode module includes a flexible substrate and a plurality of mutually parallel metal bottom electrodes and a plurality of mutually parallel top electrodes sequentially arranged on the flexible substrate;

[0045] The plurality of metal bottom electrodes and the plurality of top electrodes are vertically distributed to form a mesh structure;

[0046] A semiconductor heterojunction is arranged at the contact position of the metal bottom electrode and the top electrode;

[0047] The semiconductor heterojunction includes a two-dimensional semiconductor layer and a zero-dimensional semiconductor layer sequentially stacked from bottom to top;

[0048] The curved microlens is provided with a plurality of protrusions; the distribution mode of the protrusions is the same as the distribution mode of the semiconductor heterojunction.

[0049] In the present invention, the material of the flexible substrate preferably includes polyimide; the thickness of the flexible substrate is preferably 0.1 mm. In a specific embodiment of the present invention, the size of the flexible substrate is preferably 4 cm * 4 cm.

[0050] In the present invention, the number of the plurality of metal bottom electrodes is preferably 4 to 16. In a specific embodiment of the present invention, the number of the metal bottom electrodes is specifically 16.

[0051] In the present invention, the metal bottom electrode preferably includes an end region and an intermediate region. In the present invention, the size of the end region is preferably 1.2 - 1.6 mm * 1.2 - 1.6 mm. In the present invention, the width of the intermediate region is preferably 0.5 - 2.5 mm. The present invention has no special limitation on the length of the intermediate region, and it can be adjusted according to the size of the required device. In a specific embodiment of the present invention, the length of the intermediate region is preferably 3.5 cm. In the present invention, the interval between adjacent two metal bottom electrodes is preferably 0.5 - 2.5 mm.

[0052] In the present invention, the metal bottom electrode preferably includes a titanium metal layer and a gold metal layer which are stacked in sequence from bottom to top. In the present invention, the thickness of the titanium metal layer is preferably 20 - 30 nm, further preferably 22 - 28 nm, and more preferably 23 - 25 nm; the thickness of the gold metal layer is preferably 60 - 80 nm, further preferably 62 - 78 nm, and more preferably 65 - 75 nm.

[0053] In the present invention, the material of the two-dimensional semiconductor layer preferably includes one or more of zinc oxide, titanium dioxide, graphene, and molybdenum disulfide. In the present invention, the thickness of the two-dimensional semiconductor layer is preferably 180 - 200 nm, further preferably 182 - 195 nm, and more preferably 185 - 190 nm.

[0054] In the present invention, the material of the zero-dimensional semiconductor layer preferably includes one or more of lead sulfide quantum dots, mercury telluride quantum dots, lead selenide quantum dots, and lead telluride quantum dots. In the present invention, the thickness of the zero-dimensional semiconductor layer is preferably 340 - 360 nm, further preferably 342 - 358 nm, and more preferably 345 - 355 nm.

[0055] In the present invention, the size of the semiconductor heterojunction is preferably 1 - 3 mm * 1 - 3 mm. In the present invention, the semiconductor heterojunction is preferably square.

[0056] In the present invention, the stacked two-dimensional semiconductor layer and zero-dimensional semiconductor layer form a low-dimensional semiconductor heterojunction.

[0057] In the present invention, the material of the top electrode preferably includes indium tin oxide.

[0058] In the present invention, the number of the plurality of top electrodes is preferably 4 - 16. In a specific embodiment of the present invention, the number of the top electrodes is preferably 16.

[0059] In the present invention, the top electrode preferably includes an end region and a middle region. In the present invention, the size of the end region is preferably 1.2 - 1.6 mm * 1.2 - 1.6 mm. In the present invention, the width of the middle region is preferably 0.5 - 2.5 mm. The present invention has no special limitation on the length of the middle region, and it can be adjusted according to the size of the required device. In a specific embodiment of the present invention, the length of the middle region is preferably 3.5 cm. In the present invention, the interval between two adjacent top electrodes is preferably 0.5 - 2.5 mm.

[0060] In the present invention, the thickness of the top electrode is preferably 200 - 220 nm, more preferably 205 - 215 nm, and still more preferably 208 - 210 nm.

[0061] In the present invention, the material of the curved microlens preferably includes polydimethylsiloxane. In the present invention, the radius of curvature of each convex is preferably 0.5 - 1.25 mm.

[0062] The present invention also provides a method for preparing the compound-eye structure flexible infrared detector according to the above technical solution, including the following steps:

[0063] Preparing a plurality of metal bottom electrodes on the surface of the flexible substrate;

[0064] Preparing a plurality of semiconductor heterojunctions on the contact regions of the plurality of metal bottom electrodes and the top electrode;

[0065] Preparing a plurality of top electrodes on the plurality of semiconductor heterojunctions to obtain an electrode module;

[0066] Combining the curved microlens and the electrode module to obtain the compound-eye structure flexible infrared detector.

[0067] The present invention prepares a plurality of metal bottom electrodes on the surface of the flexible substrate.

[0068] In the present invention, when the material of the flexible substrate is polyimide, the flexible substrate is preferably obtained by preparation, and the preparation method preferably includes the following steps:

[0069] Pasting a polyimide double-sided adhesive on the quartz glass, transferring the polyimide film to the surface of the polyimide double-sided adhesive, and performing a vacuum treatment to obtain the flexible substrate.

[0070] In the present invention, the thickness of the quartz glass is preferably 1 mm; the size is preferably 4 cm * 4 cm. In the present invention, the thickness of the polyimide film is preferably 0.1 mm, and the size is preferably 4 cm * 4 cm.

[0071] The present invention has no special limitation on the process of the transfer and vacuum pumping treatment, and the process well-known to those skilled in the art can be adopted. In the present invention, the air bubbles and the impurities attached to the surface between the polyimide film and the quartz glass can be removed through the vacuum pumping treatment.

[0072] In the present invention, the preparation method of the plurality of metal bottom electrodes is preferably ion beam sputtering deposition, electron beam evaporation deposition or thermal evaporation deposition. In the present invention, the deposition rates of the ion beam sputtering deposition and the electron beam evaporation deposition are independently preferably 0.1 to 0.5 Å / second. The present invention has no special limitation on the process of the ion beam sputtering deposition or the electron beam evaporation deposition, and the process well-known to those skilled in the art can be adopted.

[0073] In a specific embodiment of the present invention, the preparation of the plurality of metal bottom electrodes preferably includes:

[0074] Placing a mask plate on the surface of the flexible substrate, and sequentially depositing a titanium metal layer and a gold metal layer by means of ion beam sputtering deposition, electron beam evaporation deposition or thermal evaporation deposition.

[0075] After obtaining the plurality of metal bottom electrodes, the present invention prepares a plurality of semiconductor heterojunctions in the contact regions between the plurality of metal bottom electrodes and the top electrode.

[0076] In the present invention, the preparation of the semiconductor heterojunction preferably includes:

[0077] Depositing a two-dimensional semiconductor layer on the metal bottom electrode by means of atomic layer deposition, magnetron sputtering deposition or chemical vapor deposition;

[0078] Preparing a zero-dimensional semiconductor layer on the surface of the two-dimensional semiconductor layer by means of spin coating.

[0079] The present invention has no special limitation on the processes of the atomic layer deposition, the magnetron sputtering deposition, the chemical vapor deposition and the spin coating, and the processes well-known to those skilled in the art can be adopted.

[0080] In the present invention, the semiconductor heterojunction is preferably located in the middle region of the metal bottom electrode. In the present invention, the interval between two adjacent semiconductor heterojunctions on each metal bottom electrode is preferably 1 mm.

[0081] After obtaining the semiconductor heterojunction, the present invention prepares a plurality of top electrodes on the surface of the semiconductor heterojunction to obtain an electrode module.

[0082] In the present invention, the preparation method of the top electrode is preferably ion beam sputtering deposition; the deposition rate of the ion beam sputtering deposition is preferably 0.1 - 0.5 Å / s. The present invention does not have special limitations on the process of the ion beam sputtering deposition, and the process well-known to those skilled in the art can be adopted.

[0083] In a specific embodiment of the present invention, the preparation of the top electrode preferably includes:

[0084] Placing a mask on the surface of a flexible substrate on which a metal bottom electrode and a semiconductor heterojunction are grown, and preparing the top electrode by means of ion beam sputtering deposition.

[0085] After obtaining the electrode module, the present invention combines the curved microlens and the electrode module to obtain the compound eye structure flexible infrared detector.

[0086] In the present invention, when the material of the curved microlens is polydimethylsiloxane, the curved microlens is preferably prepared through; the preparation method preferably includes:

[0087] Mixing a polydimethylsiloxane prepolymer and a silicone elastomer, pouring the obtained mixture into an aluminum curved microlens metal mold through soft lithography process, and sequentially standing and drying to obtain the curved microlens.

[0088] In the present invention, the mass ratio of the polydimethylsiloxane prepolymer to the silicone elastomer is 10:1. The present invention does not have special limitations on the mixing process, and a conventional mixing method can be adopted to mix evenly.

[0089] The present invention does not have special limitations on the process of the soft lithography process, and the process well-known to those skilled in the art can be adopted. In the present invention, the standing time is preferably 72 h; the drying method is preferably natural air drying.

[0090] In the present invention, the schematic diagram of the preparation process of the curved microlens is as Figure 3 shown.

[0091] In the present invention, the combination process preferably includes:

[0092] Aligning the curved microlens and the electrode module by using the automatic alignment technology of a high-precision transfer platform, and curing by ultraviolet light ozone to combine the curved microlens and the electrode module.

[0093] The present invention does not have special limitations on the alignment and ultraviolet light ozone curing processes, and the processes well-known to those skilled in the art can be adopted.

[0094] In the present invention, the schematic diagram of the process of combining the curved microlens and the electrode module is as Figure 4as shown

[0095] The present invention also provides the application of the compound-eye structure flexible infrared detector described in the above technical solution or the compound-eye structure flexible infrared detector prepared by the preparation method described in the above technical solution in bionic optoelectronic devices. The present invention has no special limitation on the specific implementation manner of the application, and the process well-known to those skilled in the art can be adopted.

[0096] In order to further illustrate the present invention, a compound-eye structure flexible infrared detector provided by the present invention, its preparation method and application will be described in detail below with reference to the accompanying drawings and embodiments, but they cannot be understood as limiting the protection scope of the present invention.

[0097] Example 1

[0098] A polyimide double-sided adhesive is pasted on a quartz glass (with a thickness of 1 mm and a size of 4 cm * 4 cm), and a polyimide film (with a thickness of 0.1 mm and a size of 4 cm * 4 cm) is transferred to the surface of the polyimide double-sided adhesive, and after vacuum treatment, the flexible substrate is obtained;

[0099] A mask plate is arranged on the surface of the flexible substrate, and a titanium metal layer with a thickness of 25 nm and a gold metal layer with a thickness of 65 nm are sequentially deposited by ion beam sputtering at a deposition rate of 0.5 Å / s to obtain 16 metal bottom electrodes (where the size of the end region is 1.2 mm * 1.2 mm, and the length of the middle region is 3.5 cm and the width is 1 mm), and the interval between adjacent two metal bottom electrodes is 1 mm;

[0100] A two-dimensional zinc oxide semiconductor layer with a thickness of 185 nm is deposited in the middle region of each metal bottom electrode by atomic layer deposition; then a zero-dimensional lead sulfide quantum dot semiconductor layer with a thickness of 345 nm is prepared on the surface of the two-dimensional zinc oxide semiconductor layer by spin coating to obtain 16 semiconductor heterojunctions, and the interval between adjacent two semiconductor heterojunctions on each metal bottom electrode is 1 mm;

[0101] A mask plate is arranged on the surface of the flexible substrate on which the metal bottom electrode and the semiconductor heterojunction are grown, and 16 indium tin oxide top electrodes with a thickness of 200 nm (where the size of the end region is 1.2 mm * 1.2 mm, and the length of the middle region is 3.5 cm and the width is 1 mm) are prepared by ion beam sputtering deposition at a deposition rate of 0.5 Å / s to obtain an electrode module; the cross-sectional structure schematic diagram of the obtained electrode module is as Figure 1 shown, where 1 is the flexible substrate, 2 is the metal bottom electrode, 3 is the two-dimensional zinc oxide semiconductor layer, 4 is the zero-dimensional lead sulfide quantum dot semiconductor layer, and 5 is the indium tin oxide top electrode; the top view of the obtained electrode module is as Figure 2As shown, where 1 is a flexible substrate, 2 is a metal bottom electrode, 5 is an indium tin oxide top electrode, and 6 is a semiconductor heterojunction;

[0102] Mix the polydimethylsiloxane prepolymer and the silicone elastomer in a mass ratio of 10:1. Pour the resulting mixture into an aluminum curved microlens metal mold through soft lithography, let it stand for 72 h, and air-dry naturally to obtain the curved microlens (with a curvature radius of 0.5 mm). Use the automatic alignment technology of a high-precision transfer platform to align the curved microlens and the electrode module, and cure them by ultraviolet light ozone to combine the curved microlens and the electrode module to obtain the compound eye structure flexible infrared detector.

[0103] Example 2

[0104] Paste a polyimide double-sided adhesive on a quartz glass (with a thickness of 1 mm and a size of 4 cm × 4 cm), transfer the polyimide film (with a thickness of 0.1 mm and a size of 4 cm × 4 cm) to the surface of the polyimide double-sided adhesive, and perform a vacuum treatment to obtain the flexible substrate;

[0105] Set a mask on the surface of the flexible substrate, and sequentially deposit a titanium metal layer with a thickness of 30 nm and a gold metal layer with a thickness of 80 nm by electron beam evaporation deposition at a deposition rate of 0.5 Å / s to obtain 16 metal bottom electrodes (where the size of the end region is 1.6 mm × 1.6 mm, and the length of the middle region is 3.5 cm and the width is 1.5 mm). The interval between adjacent two metal bottom electrodes is 1 mm;

[0106] Deposit a two-dimensional zinc oxide semiconductor layer with a thickness of 200 nm in the middle region of each metal bottom electrode by atomic layer deposition; then prepare a zero-dimensional lead sulfide quantum dot semiconductor layer with a thickness of 360 nm on the surface of the two-dimensional zinc oxide semiconductor layer by spin coating to obtain 16 semiconductor heterojunctions. The interval between adjacent two semiconductor heterojunctions on each metal bottom electrode is 1 mm;

[0107] Set a mask on the surface of the flexible substrate grown with the metal bottom electrode and the semiconductor heterojunction, and prepare 16 indium tin oxide top electrodes with a thickness of 220 nm (where the size of the end region is 1.6 mm × 1.6 mm, and the length of the middle region is 3.5 cm and the width is 1.5 mm) by ion beam sputtering deposition at a deposition rate of 0.5 Å / s to obtain the electrode module;

[0108] Mix the polydimethylsiloxane prepolymer and the silicone elastomer in a mass ratio of 10:1. Pour the obtained mixture into an aluminum curved micro-lens metal mold through a soft lithography process, let it stand for 72 h, and air-dry naturally to obtain the curved micro-lens (with a curvature radius of 0.75 mm). Align the curved micro-lens and the electrode module using the automatic alignment technology of a high-precision transfer platform, and cure them by ultraviolet light ozone to combine the curved micro-lens and the electrode module, thereby obtaining the compound eye structure flexible infrared detector.

[0109] Performance Test

[0110] Test Example 1

[0111] Perform variable incident light wavelength testing on the compound eye structure flexible infrared detector obtained in Example 1. The obtained spectral response diagram is as Figure 5 shown. It can be seen from Figure 5 that under the working conditions of an incident light power of 53 μW and an applied voltage of 0 V, the compound eye structure flexible infrared detector provided by the present invention exhibits high-sensitivity detection capabilities in a wide spectral range (405 - 1550 nm); in the near-infrared band (wavelength of 830 nm), the responsivity of the compound eye structure flexible infrared detector reaches 74 mA / W.

[0112] Test Example 2

[0113] Perform variable light power testing on the compound eye structure flexible infrared detector obtained in Example 1. The obtained linear dynamic range diagram is as Figure 6 shown. It can be seen from Figure 6 that under the working conditions of an applied voltage of 0 V, the compound eye structure flexible infrared detector has a large linear dynamic range in a wide spectral range (520 - 1330 nm). When the incident light wavelength is 637 nm, the linear dynamic range of the compound eye structure flexible infrared detector reaches 102 dB.

[0114] Test Example 3

[0115] Perform transient response testing on the compound eye structure flexible infrared detector obtained in Example 1. The obtained test diagram is as Figure 7 shown. It can be seen from Figure 7 that under the working conditions of an applied voltage of 0 V, the rise and fall times of the compound eye structure flexible infrared detector are 71 and 312 μs respectively, indicating its application prospects in the field of high-sensitivity moving target detection;

[0116] Test Example 4

[0117] Perform stability testing on the compound eye structure flexible infrared detector obtained in Example 1. The obtained light response diagram is as Figure 8 shown. It can be seen from Figure 8It can be seen that under the illumination of periodically switched incident light (wavelength: 830 nm, power: 23 μW, applied voltage: 0 V), the device still exhibits a stable optical response after more than 380 cycles, indicating the high stability of the device.

[0118] Test Example 5

[0119] The three-dimensional image of the photocurrent value of the compound eye structure flexible infrared detector obtained in Example 1 under white light illumination is as Figure 9 shown. From Figure 9 it can be seen that under the working condition of an applied voltage of 0 V, all 16×16 flexible detectors exhibit an obvious optical response, and the photocurrent values are all 100 nA, indicating that the area array infrared detection of the compound eye structure shows high uniformity.

[0120] Although the above embodiments have described the present invention in detail, they are only a part of the embodiments of the present invention, rather than all embodiments. Other embodiments can be obtained based on these embodiments without creative efforts, and these embodiments all fall within the protection scope of the present invention.

Claims

1. A flexible infrared detector with a compound eye structure, characterized in that, It includes an electrode module and a curved micro-lens covering the electrode module; The electrode module includes a flexible substrate, and a plurality of mutually parallel metal bottom electrodes and a plurality of mutually parallel top electrodes sequentially arranged on the flexible substrate; the number of the plurality of metal bottom electrodes is 4 to 16, and the interval between adjacent two metal bottom electrodes is 0.5 to 2.5 mm; the number of the plurality of top electrodes is 4 to 16, and the interval between adjacent two top electrodes is 0.5 to 2.5 mm; The plurality of metal bottom electrodes and the plurality of top electrodes are vertically distributed to form a network structure; A semiconductor heterojunction is arranged at the contact position of the metal bottom electrode and the top electrode; The semiconductor heterojunction includes a two-dimensional semiconductor layer and a zero-dimensional semiconductor layer which are stacked in sequence from bottom to top; the material of the two-dimensional semiconductor layer includes one or more of zinc oxide, titanium dioxide, graphene, and molybdenum disulfide; the thickness of the two-dimensional semiconductor layer is 180-200 nm; the material of the zero-dimensional semiconductor layer includes one or more of lead sulfide quantum dots 、 mercury telluride quantum dots, lead selenide quantum dots, and lead telluride quantum dots; the thickness of the zero-dimensional semiconductor layer is 340-360 nm; The curved micro-lens is provided with a plurality of protrusions; the distribution mode of the protrusions is the same as the distribution mode of the semiconductor heterojunction.

2. The flexible infrared detector with a compound eye structure according to claim 1, wherein The metal bottom electrode includes a titanium metal layer and a gold metal layer sequentially stacked from bottom to top; The thickness of the titanium metal layer is 20 to 30 nm; the thickness of the gold metal layer is 60 to 80 nm.

3. The compound-eye structure flexible infrared detector according to claim 1, wherein, The thickness of the top electrode is 200 to 220 nm.

4. The compound-eye structure flexible infrared detector according to claim 1 or 3, characterized in that The material of the top electrode includes indium tin oxide.

5. The compound-eye structure flexible infrared detector according to claim 1, wherein The material of the curved micro-lens includes polydimethylsiloxane; The curvature radius of each protrusion is 0.5 to 1.25 mm.

6. The preparation method of the compound eye structure flexible infrared detector according to any one of claims 1 to 5, characterized in that, It includes the following steps: Prepare a plurality of metal bottom electrodes on the surface of the flexible substrate; Prepare a plurality of semiconductor heterojunctions on the contact areas of the plurality of metal bottom electrodes and the top electrodes; Prepare a plurality of top electrodes on the plurality of semiconductor heterojunctions to obtain an electrode module; Combine the curved micro-lens and the electrode module to obtain the compound-eye structure flexible infrared detector.

7. Application of the compound-eye structure flexible infrared detector according to any one of claims 1 to 5 or the compound-eye structure flexible infrared detector prepared by the preparation method according to claim 6 in bionic optoelectronic devices.

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