Display panel, preparation method thereof, display assembly and display device

Abstract

The application provides a display panel, a preparation method thereof, a display assembly and a display device. The display panel comprises a substrate, a driving circuit layer and a light-emitting layer. The substrate comprises a first flexible substrate layer, a second flexible substrate layer located above the first flexible substrate layer, and a spacing layer located between the second flexible substrate layer and the first flexible substrate layer, and part of the second flexible substrate layer is connected with the first flexible substrate layer through the spacing layer; the material of the spacing layer is different from that of the first flexible substrate layer and the second flexible substrate layer; the driving circuit layer is located above the substrate, and the light-emitting layer is located above the driving circuit layer. The display panel has two flexible substrate layers which are partially spaced and partially connected, so that the flexibility of the substrate is improved, the stress conduction and absorption capacity of the substrate are improved, the influence of stress on the internal driving circuit layer and the light-emitting layer is reduced, and the performance, service life and yield of the display panel are improved.

Description

Technical Field

[0001] This invention belongs to the field of display technology, and particularly relates to a display panel and its manufacturing method, display components, and display devices. Background Technology

[0002] Flexible panels have become increasingly commercialized and their applications are constantly expanding. Flexible panels, such as Active-Matrix Organic Light Emitting Diode (AMOLED) panels, dominate the flexible screen market due to their ability to bend and fold significantly. However, AMOLED panels also suffer from issues such as broken lines, dark spots, and screen distortion. Improving the performance of AMOLED panels has been a major focus of attention. Summary of the Invention

[0003] According to a first aspect of the present invention, a display panel is provided, the display panel having a display area and a non-display area located around the display area, comprising:

[0004] The substrate includes a first flexible substrate layer, a second flexible substrate layer located on top of the first flexible substrate layer, and a spacer layer located between the second flexible substrate layer and the first flexible substrate layer, wherein a portion of the second flexible substrate layer extends through the spacer layer and is connected to the first flexible substrate layer; wherein the spacer layer is made of a different material than the first flexible substrate layer and the second flexible substrate layer.

[0005] A driving circuit layer is located on the substrate;

[0006] The light-emitting layer is located above the driving circuit layer.

[0007] In some embodiments, the spacer layer has an opening pattern at least located in the display area, and the second flexible substrate layer includes a connecting portion located in the opening pattern and a main body portion located on the side of the spacer layer opposite to the first flexible substrate layer; or,

[0008] The driving circuit layer includes a pixel driving circuit with a thin film transistor; the spacer layer has an opening pattern located at least below the thin film transistor, and the second flexible substrate layer includes a connection portion located in the opening pattern and a main body portion located on the side of the spacer layer opposite to the first flexible substrate layer.

[0009] In some embodiments, the thickness of the main body portion of the second flexible substrate is less than the thickness of the first flexible substrate;

[0010] The thickness of the first flexible substrate layer is 10 μm-50 μm; and / or,

[0011] The thickness of the main body of the second flexible substrate is 5μm-20μm.

[0012] In some embodiments, the spacer layer is an inorganic material layer;

[0013] The thickness of the spacer layer is 400 nanometers to 700 nanometers; and / or,

[0014] The first flexible substrate layer is doped with elastic microspheres.

[0015] The elastic microsphere structure is made of polyimide or rubber.

[0016] According to a second aspect of the present invention, a display assembly is provided, including a carrier plate and a display panel as described above; wherein the display panel is disposed on the carrier plate.

[0017] According to a third aspect of the present invention, a display device is provided, including a display panel as described above.

[0018] According to a fourth aspect of the present invention, a method for manufacturing a display panel is provided, comprising:

[0019] Provide carrier board;

[0020] A substrate is formed on the carrier plate. The substrate includes a first flexible substrate layer, a second flexible substrate layer located on the first flexible substrate layer, and a spacer layer located between the second flexible substrate layer and the first flexible substrate layer. A portion of the second flexible substrate layer passes through the spacer layer and is connected to the first flexible substrate layer. The spacer layer is made of a different material than the first flexible substrate layer and the second flexible substrate layer.

[0021] A driving circuit layer is formed on the substrate;

[0022] A light-emitting layer is formed on top of the driving circuit layer.

[0023] In some embodiments, forming a substrate on the carrier plate includes:

[0024] A first flexible substrate layer is formed on the carrier plate;

[0025] A spacer layer is formed on a first flexible substrate layer, and an opening pattern is formed in the spacer layer;

[0026] A second flexible substrate layer is formed on the spacer layer and in the aperture pattern.

[0027] In some embodiments, the display panel has a display area and a non-display area located around the display area, and forming an opening pattern in the spacer layer includes:

[0028] An opening pattern located in the display area is formed in the spacer layer; or,

[0029] The driving circuit layer includes a pixel driving circuit with thin-film transistors, and forming an aperture pattern in the spacer layer includes:

[0030] An opening pattern is formed in the spacer layer, at least below the thin-film transistor;

[0031] The second flexible substrate layer includes a connecting portion located in the opening pattern and a main body portion located on the side of the spacer layer opposite to the first flexible substrate layer, wherein the thickness of the main body portion of the second flexible substrate layer is less than the thickness of the first flexible substrate layer.

[0032] The formation of the first flexible substrate layer on the carrier plate includes:

[0033] An elastic microsphere material is disposed on the substrate to form an elastic microsphere structure layer; the elastic microsphere structure layer includes a plurality of spaced elastic microsphere structures;

[0034] A first flexible substrate material is disposed on the elastic microsphere structure layer to form a first flexible substrate layer doped with the elastic microsphere structure.

[0035] Alternatively, forming the first flexible substrate layer on the carrier plate includes:

[0036] The elastic microsphere structure material is mixed into the first flexible substrate material to form a hybrid substrate material;

[0037] The hybrid substrate material is disposed on the substrate to form the first flexible substrate layer.

[0038] The elastic microsphere structure is made of polyimide or rubber.

[0039] In some embodiments, the spacer layer is an inorganic material layer;

[0040] After forming the light-emitting layer on the driving circuit layer, the method includes:

[0041] Remove the carrier plate.

[0042] Based on the above technical solution, the above display panel, by setting the substrate as two flexible substrate layers with partial spacing and partial connection, is conducive to improving the flexibility of the substrate, improving the stress transmission and absorption capacity of the substrate, reducing the impact of stress on internal driving circuit layers and light-emitting layers and other functional layers, and improving the performance, service life and yield of the display panel. Attached Figure Description

[0043] Figure 1 A top view of a display panel provided according to an embodiment of the present invention;

[0044] Figure 2 A partial cross-sectional view of a display panel provided in an embodiment of the present invention;

[0045] Figure 3 A partial cross-sectional view of a display component provided in an embodiment of the present invention;

[0046] Figure 4 A flowchart illustrating the fabrication process of a display panel according to an embodiment of the present invention;

[0047] Figures 5 to 21 This is a manufacturing process diagram of a display panel provided according to an embodiment of the present invention. Detailed Implementation

[0048] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. The terminology used in this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

[0049] Flexible panels have become increasingly commercialized and their applications are constantly expanding. Flexible panels, such as Active-Matrix Organic Light Emitting Diode (AMOLED) panels, dominate the flexible screen market due to their ability to bend and fold significantly. However, AMOLED panels also suffer from issues like broken lines, dark spots, and screen distortion. Improving the performance of AMOLED panels has been a major focus. Inventors have discovered that the single-layer substrate used in related technologies has weak stress resistance. The functional layers (such as the driving circuit layer and the light-emitting layer) and their corresponding circuitry within the display panel are easily subjected to significant stress when the panel is fully open or folded, leading to damage and affecting the panel's yield and lifespan.

[0050] Therefore, this application provides a display panel, a method for manufacturing the same, a display component, and a display device. The display panel includes a substrate, a driving circuit layer, and a light-emitting layer. The substrate includes a first flexible substrate layer, a second flexible substrate layer located on top of the first flexible substrate layer, and a spacer layer located between the second flexible substrate layer and the first flexible substrate layer. A portion of the second flexible substrate layer penetrates the spacer layer and is connected to the first flexible substrate layer. The spacer layer is made of a different material than both the first and second flexible substrate layers. The driving circuit layer is located on the substrate. The light-emitting layer is located on the driving circuit layer. By configuring the substrate as two flexible substrate layers with partial spacing and partial connection, the display panel improves the flexibility of the substrate, enhances its stress transmission and absorption capabilities, reduces the impact of stress on internal driving circuit layers and light-emitting layers, and improves the performance, lifespan, and yield of the display panel.

[0051] The following is combined with Figures 1 to 21 The display panel, its manufacturing method, display components, and display device are described in detail.

[0052] Please refer to Figure 1 and combine when necessary Figure 2 As shown, Figure 1 This application provides a display panel 1000. Figure 2 It can be Figure 1 The diagram shows a cross-sectional view of the display panel 1000 at point A. The display panel 1000 has a display area S1 (i.e., area AA) and a non-display area S2 located around the display area. The display panel 1000 includes a substrate 10, a driving circuit layer 600, and a light-emitting layer 90.

[0053] The substrate 10 includes a first flexible substrate layer 11, a second flexible substrate layer 12 located on the first flexible substrate layer 11, and a spacer layer 13 located between the second flexible substrate layer 12 and the first flexible substrate layer 11. A portion of the second flexible substrate layer 12 passes through the spacer layer 13 and is connected to the first flexible substrate layer 11. The spacer layer 13 is made of a different material than the first flexible substrate layer 11 and the second flexible substrate layer 12.

[0054] The spacer layer 13 has an opening pattern 1301 located at least below the thin film transistor 60, and the second flexible substrate layer 12 includes a connecting portion 121 located in the opening pattern 1301 and a main body portion 122 located on the side of the spacer layer 13 opposite to the first flexible substrate layer 11.

[0055] It is understood that in some embodiments, the spacer layer 13 may have an opening pattern 1301 located in the display area S1. Thus, the spacer layer 13 can be a solid film layer in the non-display area. Of course, in other embodiments, the opening pattern may extend into the non-display area.

[0056] Accordingly, the second flexible substrate layer 12 includes a connecting portion 121 located in the opening pattern 1301 and a main body portion 122 located on the side of the spacer layer 13 opposite to the first flexible substrate layer 11.

[0057] Please combine Figure 8 As shown, the opening pattern 1301 may include multiple spaced openings. The shape of the openings can be regular or irregular, such as rectangles, circles, or ellipses. The specific shape can be set as needed, and this application does not limit this.

[0058] In some embodiments, the thickness of the main body 122 of the second flexible substrate 12 is less than the thickness of the first flexible substrate 11, which is more conducive to the second flexible substrate 12 transmitting stress to the first flexible substrate 11, and the first flexible substrate 11 can absorb more stress.

[0059] For example, in some embodiments, the thickness of the first flexible substrate layer 11 is 10μm-50μm.

[0060] In some embodiments, the thickness of the main body portion 122 of the second flexible substrate layer 12 is 5μm-20μm.

[0061] The thicknesses of the first flexible substrate layer 11 and the second flexible substrate layer 12 can be set according to specific circumstances. This application does not impose any limitations on this.

[0062] It is understandable that the materials of the first flexible substrate layer 11 and the second flexible substrate layer can be flexible materials such as polyimide.

[0063] In some embodiments, the spacer layer 13 is an inorganic material layer, such as a SiN & SiO film layer. In embodiments where the spacer layer 13 has an opening pattern 1301 in the display area S1 but no opening pattern in the non-display area S2, the spacer layer 13 can better prevent moisture from spreading upward from the bottom and edges, which is more conducive to improving the service life of the display panel.

[0064] In some embodiments, the thickness of the spacer layer 13 is 400 nanometers to 700 nanometers. For example, it can be set to 600 nanometers.

[0065] In some embodiments, the first flexible substrate layer 11 is doped with an elastic microsphere structure 111. This elastic microsphere structure 111 can absorb some of the stress, which is more conducive to improving the ability of the first flexible substrate layer 11 to resist and absorb stress.

[0066] In some embodiments, the elastic microsphere structure 111 is made of polyimide or rubber.

[0067] The driving circuit layer 600 is located on the substrate 10. The driving circuit layer 600 includes a pixel driving circuit having a plurality of thin-film transistors 60.

[0068] Accordingly, in some embodiments, the opening pattern 1301 of the spacer layer 13 is located below the thin film transistor 60, such as directly below it, which helps to ensure that the stress at the thin film transistor 60 can be well transmitted downward.

[0069] The thin-film transistor 60 includes a first electrode 63, a second electrode 64, a gate electrode 62, and an active layer 61. One of the first electrode 63 and the second electrode 64 is the source electrode, and the other is the drain electrode.

[0070] The driving circuit layer 600 further includes a gate insulating layer 40, an interlayer dielectric layer 50, a passivation layer 70, and a planarization layer 80. The gate insulating layer 40 is located between the active layer 61 and the gate 62. The interlayer dielectric layer 50 is located on the side of the gate 62, the active layer 61, and the gate insulating layer 40 facing away from the substrate 10. The first electrode 63 and the second electrode 64 are connected to the active layer 61 through vias penetrating the interlayer dielectric layer 50. The passivation layer 70 is located on the side of the interlayer dielectric layer 50 and the first electrode 63 and the second electrode 64 facing away from the substrate 10. The planarization layer 80 is located on the side of the passivation layer 70 facing away from the substrate 10.

[0071] The active layer 61 can be formed by sputtering and can be indium gallium zinc oxide (IGZO), with a thickness of tens of nanometers, such as 30 nanometers. The gate insulating layer 40 can be formed by chemical vapor deposition (CVD), with a thickness of hundreds of nanometers, such as 150 nanometers. The gate 62 can be formed by physical vapor deposition (PVD), with a thickness of hundreds of nanometers. The interlayer dielectric layer 50 can be several hundred nanometers thick, such as over three hundred nanometers. The material of the interlayer dielectric layer 50 can be SiO. The first electrode 63, the second electrode 64, and the corresponding vias can be formed by physical vapor deposition (PVD) and photolithography. The passivation layer 70 can be formed by chemical vapor deposition (CVD) combined with photolithography, with a thickness of hundreds of nanometers, such as 150 nanometers. The planarization layer 80 can be formed by coating.

[0072] The light-emitting layer 90 is located above the driving circuit layer 600. The light-emitting layer includes a plurality of spaced light-emitting devices 901. Each light-emitting device 901 includes a first electrode 91, a second electrode 93, and a light-emitting material layer 92 located between them. The first electrode 91 can be an anode, and the second electrode 93 can be a cathode. The cathode can be a surface electrode.

[0073] The light-emitting layer 90 also includes an isolation dam structure 110 (which can also be understood as a pixel definition layer) located at least around the light-emitting material layer 92.

[0074] The first electrode 91 can be formed using physical vapor deposition (PVD) combined with appropriate photolithography and etching techniques. Its film layer can specifically be an ITO / Ag / ITO film layer. The isolation dam structure 110 can be formed by coating and patterning using exposure and development methods. The light-emitting material layer 92 can be formed by printing. The second electrode 93 can be formed by vapor deposition.

[0075] The display panel 1000 also includes an encapsulation layer 120 located on the side of the light-emitting layer 90 facing away from the substrate 10.

[0076] In addition, the display panel 1000 also includes an inorganic film layer 20 on the substrate 10, a light-shielding layer 601 on the inorganic film layer 20, and an insulating layer 30 on the side of the light-shielding layer 601 facing away from the substrate. The light-shielding layer 601 can be connected to the second electrode 64 through a through hole penetrating the insulating layer 30 and the interlayer dielectric layer 50.

[0077] The inorganic film layer 20 can be deposited on the second flexible substrate layer 12 of the substrate 10 by chemical vapor deposition (CVD). Its material can be SiN & SiO, and its thickness can be set according to specific circumstances, such as several hundred nanometers, or 300 nanometers.

[0078] The insulating layer 30 can also be formed by chemical vapor deposition (CVD), and its material can be SiN & SiO. The thickness can be set according to specific circumstances, such as several hundred nanometers. For example, it can be set to 300 nanometers, where SiN can be 100 nanometers and SiO can be 200 nanometers.

[0079] Please refer to Figure 3 As shown, this application provides a display component. It includes a carrier plate 200 and a display panel 1000 or a similar display panel 1000 as described above. The display panel 1000 is disposed on the carrier plate 200.

[0080] The display assembly may also include a sacrificial layer 201, which may be an adhesive layer or a flexible buffer layer, etc. The display panel 1000 is disposed on the carrier plate 200 through the sacrificial layer 201.

[0081] The sacrificial layer 201 can be a film layer formed of amorphous silicon, and its thickness can be a few nanometers, such as 5 nanometers.

[0082] The carrier plate 200 can be a glass plate.

[0083] This application also provides a display device, including the display panel 1000 as described above. This display device can be a foldable or bendable display device, a mobile device, etc.

[0084] This application also provides a method for manufacturing a display panel, which can be used to manufacture the above-described display panel 1000 or a similar display panel 1000. Please refer to... Figure 4 As shown, and combined where necessary. Figures 5 to 21 The preparation method includes the following steps S101 to S107:

[0085] In step S101, a carrier plate 200 is provided;

[0086] In step S103, a substrate 10 is formed on the carrier plate 200. The substrate 10 includes a first flexible substrate layer 11, a second flexible substrate layer 12 located on the first flexible substrate layer 11, and a spacer layer 13 located between the second flexible substrate layer 12 and the first flexible substrate layer 11. A portion of the second flexible substrate layer 12 passes through the spacer layer 13 and is connected to the first flexible substrate layer 11. The spacer layer 13 is made of a different material than the first flexible substrate layer 11 and the second flexible substrate layer 12.

[0087] In step S105, a driving circuit layer 600 is formed on the substrate 10;

[0088] In step S107, a light-emitting layer 90 is formed on the driving circuit layer 600.

[0089] In some embodiments, the display panel is disposed on the carrier plate 200 via a sacrificial layer.

[0090] The sacrificial layer 201 can be a film formed of amorphous silicon, and its thickness can be a few nanometers, such as 5 nanometers. The sacrificial layer 201 is grown on the surface of the carrier 200.

[0091] like Figure 5 As shown, after providing the carrier plate 200 in step S101, a sacrificial layer 201 can also be provided on the carrier plate 200. All structures disposed on the carrier plate 200 are located on the sacrificial layer 201 during the fabrication process.

[0092] Please combine Figures 6 to 9As shown, in some embodiments, step S103, forming a substrate 10 on the carrier plate 200, includes the following steps S1031 to S1035:

[0093] In step S1031, a first flexible substrate layer 11 is formed on the carrier plate 200;

[0094] In step S1033, a spacer layer 13 is formed on the first flexible substrate layer 11, and an opening pattern 1301 is formed in the spacer layer 13;

[0095] In step S1035, a second flexible substrate layer 12 is formed on the spacer layer 13 and in the opening pattern 1301.

[0096] In some embodiments, the display panel 1000 has a display area S1 and a non-display area S2 located around the display area S1. Step S1033, forming the opening pattern 1301 in the spacer layer 13, may include the following step S1331:

[0097] An opening pattern 1301 located in the display area S1 is provided in the spacer layer 13.

[0098] In some embodiments, the driving circuit layer 600 includes a pixel driving circuit having a thin-film transistor 60, and the formation of the opening pattern 1301 in the spacer layer 13 in step S1033 may include the following step S1332:

[0099] An opening pattern 1301 is formed in the spacer layer 13, at least below the thin-film transistor 60.

[0100] In some embodiments, the second flexible substrate 12 includes a connecting portion 121 located in the opening pattern 1301 and a main body portion 122 located on the side of the spacer layer 13 opposite to the first flexible substrate 11, wherein the thickness of the main body portion 122 of the second flexible substrate 12 is less than the thickness of the first flexible substrate 11.

[0101] In some embodiments, forming the first flexible substrate layer 11 on the carrier plate 200 in step S1031 may include the following steps S1311 and S1312:

[0102] In step S1311, an elastic microsphere material is disposed on the substrate 10 to form an elastic microsphere structure layer; the elastic microsphere structure layer includes a plurality of spaced elastic microsphere structures 111.

[0103] In step S1312, a first flexible substrate material is disposed on the elastic microsphere structure layer to form a first flexible substrate layer 11 doped with the elastic microsphere structure 111.

[0104] Here, the elastic microsphere structure layer can be formed by coating a large amount of elastic microsphere material onto the substrate 10.

[0105] The multiple elastic microsphere structures 111 can be spaced apart individually, or they can be clusters of elastic microsphere structures. Each cluster of microsphere structures can be formed by multiple elastic microsphere structures connected together. Alternatively, multiple elastic microsphere structures 111 can be spaced apart from multiple clusters of elastic microsphere structures.

[0106] Here, the elastic microsphere structure 111 can be closer to the bottom side of the display panel (i.e., closer to the side of the carrier plate 200).

[0107] In some other embodiments, forming the first flexible substrate layer 11 on the carrier plate 200 in step S1031 may include the following steps S1313 and S1314:

[0108] In step S1313, the elastic microsphere structure 111 material is mixed into the first flexible substrate material to form a mixed substrate material;

[0109] In step S1314, the hybrid substrate material is disposed on the substrate to form the first flexible substrate layer 11.

[0110] In some embodiments, the elastic microsphere structure 111 is made of polyimide or rubber.

[0111] In some embodiments, the spacer layer 13 is an inorganic material layer, such as a SiN & SiO film layer.

[0112] Please combine Figures 10 to 12 As shown, in some embodiments, after step S103 and before step S105, the method includes sequentially forming an inorganic film layer 20, a light-shielding layer 601 on the inorganic film layer 20, and an insulating layer 30 on the side of the light-shielding layer 601 facing away from the substrate.

[0113] The inorganic film layer 20 can be deposited on the second flexible substrate layer 12 of the substrate 10 by chemical vapor deposition (CVD). Its material can be SiN & SiO, and its thickness can be set according to specific circumstances, such as several hundred nanometers, or 300 nanometers.

[0114] The insulating layer 30 can also be formed by chemical vapor deposition (CVD), and its material can be SiN & SiO. The thickness can be set according to specific circumstances, such as several hundred nanometers. For example, it can be set to 300 nanometers, where SiN can be 100 nanometers and SiO can be 200 nanometers.

[0115] Please combine Figures 13 to 18As shown, in step S105, the method includes sequentially forming an active layer 61, a gate insulating layer 40, a gate 62, and an interlayer dielectric layer 50 on the insulating layer 30. Then, a via 501 is formed in the interlayer dielectric layer 50, followed by the formation of a first electrode 63, a second electrode 64, and conductive structures within the via 501. Subsequently, a passivation layer 70 and a planarization layer 80 are formed. The passivation layer 70 is located on the side of the interlayer dielectric layer 50 and the first electrode 63 and second electrode 64 facing away from the substrate 10. The planarization layer 80 is located on the side of the passivation layer 70 facing away from the substrate 10. This completes the formation of the driving circuit layer 600.

[0116] The active layer 61 can be formed by sputtering; it can be indium gallium zinc oxide (IGZO) and its thickness can be tens of nanometers, such as 30 nanometers. The gate insulating layer 40 can be formed by chemical vapor deposition (CVD) and its thickness can be hundreds of nanometers, such as 150 nanometers. The gate 62 can be formed by physical vapor deposition (PVD) and its thickness can reach several hundred nanometers. The interlayer dielectric layer 50 can be several hundred nanometers thick, such as over three hundred nanometers. The material of the interlayer dielectric layer 50 can be SiO. The first electrode 63, the second electrode 64, and the corresponding vias can be formed by physical vapor deposition (PVD) and photolithography. The passivation layer 70 can be formed by chemical vapor deposition (CVD) combined with photolithography, and its thickness can be hundreds of nanometers, such as 150 nanometers. The planarization layer 80 can be formed by coating.

[0117] Please combine Figures 18 to 20 As shown, in step S107, vias are formed in the passivation layer 70 and planarization layer 80 of the driving circuit layer 600. A first electrode 91 is formed on the planarization layer 80, and a conductive material is formed in the vias to connect the first electrode 91 to the second electrode 64. This forms an isolation dam structure 110. The isolation dam structure 110 has a pixel opening that exposes the first electrode 91. Then, a light-emitting material layer 92 is formed in the pixel opening of the isolation dam structure 110. A second electrode 93 is formed on the light-emitting material layer 92 and the isolation dam structure 110. Thus, a light-emitting layer 90 is formed. The first electrode 91 can be an anode, and the second electrode 93 can be a cathode. The cathode can be a surface electrode.

[0118] The first electrode 91 can be formed using physical vapor deposition (PVD) combined with appropriate photolithography and etching techniques. Specifically, its film layer can be an ITO / Ag / ITO film layer. The isolation dam structure 110 can be formed by coating and patterning using exposure and development. The luminescent material layer 92 can be formed by printing. The second electrode 93 can be formed by vapor deposition.

[0119] Furthermore, the preparation method also includes forming an encapsulation layer 120 on the side of the light-emitting layer 90 facing away from the substrate 10.

[0120] Furthermore, the fabrication method also includes forming a light-shielding layer 601 on the substrate 10 and an insulating layer 30 located on the side of the light-shielding layer 601 facing away from the substrate 10. The light-shielding layer 601 can be connected to the second electrode 64 through a through-hole penetrating the insulating layer 30 and the interlayer dielectric layer 50.

[0121] Furthermore, the preparation method also includes forming an inorganic film layer 20 on one side of the substrate 10. The inorganic film layer 20 is located between the insulating layer 30 and the substrate 10.

[0122] Please combine Figure 21 As shown, in some embodiments, after forming the light-emitting layer 90 on the driving circuit layer 600, the method may include the following steps:

[0123] Remove the carrier plate 200 to form the display panel 1000.

[0124] In this application, the structural embodiments and method embodiments described can complement each other without conflict.

[0125] Those skilled in the art will understand that the accompanying drawings are merely schematic diagrams of a preferred embodiment, and the modules or processes shown in the drawings are not necessarily essential for implementing the present invention. The above descriptions are only specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A display panel having a display area and a non-display area located at a periphery of the display area, characterized by, The display panel comprises: a substrate comprising a first flexible substrate layer, a second flexible substrate layer located above the first flexible substrate layer, and a spacing layer located between the second flexible substrate layer and the first flexible substrate layer, a portion of the second flexible substrate layer being connected to the first flexible substrate layer through the spacing layer; wherein the spacing layer is different in material from the first flexible substrate layer and the second flexible substrate layer; a driving circuit layer located above the substrate; a light-emitting layer located above the driving circuit layer; the spacing layer is provided with an opening pattern located in the display area, and the second flexible substrate layer comprises a connecting portion located in the opening pattern and a main body portion located on a side of the spacing layer away from the first flexible substrate layer; or the driving circuit layer comprises a pixel driving circuit comprising a thin film transistor; the spacing layer is provided with an opening pattern located at least below the thin film transistor, and the second flexible substrate layer comprises a connecting portion located in the opening pattern and a main body portion located on a side of the spacing layer away from the first flexible substrate layer; the thickness of the main body portion of the second flexible substrate layer is less than the thickness of the first flexible substrate layer; the first flexible substrate layer comprises an elastic microsphere structure layer and a first flexible material substrate material located on the elastic microsphere structure layer.

2. The display panel of claim 1, wherein, The thickness of the first flexible substrate layer is 10-50 μm; and / or the thickness of the main body portion of the second flexible substrate layer is 5-20 μm. The spacing layer is an inorganic material layer; 3. The display panel of claim 1, wherein, The thickness of the spacing layer is 400-700 nm; and / or The material of the elastic microsphere structure is polyimide or rubber. The display panel comprises a carrier plate and the display panel according to any one of claims 1-3; wherein the display panel is located on the carrier plate.

4. A display assembly characterized by, The display panel comprises the display panel according to any one of claims 1-3.

5. A display device, characterized by comprising: The display panel comprises:

6. A method for manufacturing a display panel, characterized by, providing a carrier plate; forming a substrate on the carrier plate, the substrate comprising a first flexible substrate layer, a second flexible substrate layer located above the first flexible substrate layer, and a spacing layer located between the second flexible substrate layer and the first flexible substrate layer, a portion of the second flexible substrate layer being connected to the first flexible substrate layer through the spacing layer; wherein the spacing layer is different in material from the first flexible substrate layer and the second flexible substrate layer; forming a driving circuit layer on the substrate; forming a light-emitting layer on the driving circuit layer; the spacing layer is provided with an opening pattern located in the display area, and the second flexible substrate layer comprises a connecting portion located in the opening pattern and a main body portion located on a side of the spacing layer away from the first flexible substrate layer; or the driving circuit layer comprises a pixel driving circuit comprising a thin film transistor; the spacing layer is provided with an opening pattern located at least below the thin film transistor, and the second flexible substrate layer comprises a connecting portion located in the opening pattern and a main body portion located on a side of the spacing layer away from the first flexible substrate layer; the thickness of the main body portion of the second flexible substrate layer is less than the thickness of the first flexible substrate layer; the first flexible substrate layer comprises an elastic microsphere structure layer and a first flexible material substrate material located on the elastic microsphere structure layer. The first flexible substrate layer comprises an elastic microsphere structure layer and a first flexible material substrate material on the elastic microsphere structure layer.

7. The method of producing a display panel according to claim 6, wherein The forming the substrate on the carrier plate comprises: forming a first flexible substrate layer on the carrier plate; forming a spacer layer on the first flexible substrate layer and forming an opening pattern in the spacer layer; forming a second flexible substrate layer on the spacer layer and in the opening pattern.

8. The method of producing a display panel according to claim 7, wherein The display panel has a display area and a non-display area outside the display area, and the forming the opening pattern in the spacer layer comprises: the spacer layer is provided with an opening pattern in the display area; or The driving circuit layer comprises a pixel driving circuit with a thin film transistor, and the forming the opening pattern in the spacer layer comprises: the spacer layer is provided with an opening pattern at least below the thin film transistor; The second flexible substrate layer comprises a connecting portion in the opening pattern and a main body portion on the side of the spacer layer away from the first flexible substrate layer, and the thickness of the main body portion of the second flexible substrate layer is less than the thickness of the first flexible substrate layer. The forming the first flexible substrate layer on the carrier plate comprises: a elastic microsphere material is arranged on the substrate to form an elastic microsphere structure layer; the elastic microsphere structure layer comprises a plurality of spaced elastic microsphere structures; a first flexible substrate material is arranged on the elastic microsphere structure layer to form a first flexible substrate layer doped with the elastic microsphere structure; Alternatively, the forming the first flexible substrate layer on the carrier plate comprises: mixing an elastic microsphere structure material into a first flexible substrate material to form a mixed substrate material; arranging the mixed substrate material on the substrate to form the first flexible substrate layer; The material of the elastic microsphere structure is polyimide or rubber.

9. The method of producing a display panel according to claim 6, wherein The spacer layer is an inorganic material layer; After forming the light-emitting layer on the driving circuit layer, the method comprises: removing the carrier plate.

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