Method, device and medium for determining incident position of muon

Abstract

The application discloses a muon incidence position determination method, device, equipment and medium, wherein the method comprises the following steps: after receiving the mth signal with an amplitude greater than a first threshold value and less than a second threshold value from a muon detection device, if the nth signal with an amplitude greater than the second threshold value is received from the muon detection device, the nth time corresponding to the nth signal is acquired; wherein the mth signal and the nth signal comprise signals obtained by an anode wire of a detection device of the muon detection device in response to ions ionized when the muon is captured by the detection device; m is an integer greater than or equal to 1; n is an integer greater than m; based on the nth time, the incidence time of the muon incident to the detection device is determined; and based on the incidence time, the incidence position of the muon on the detection device is determined.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of detection, and in particular to a method and device for determining the incidence position of muons, equipment and a medium. BACKGROUND

[0002] In practical applications, when detecting cosmic muons of fission and materials, the specific position of muon incidence to a muon detector is usually determined by measuring the drift time of the signal transmitted by the muon detector. However, the signal transmitted by the muon detector is often hidden in noise, and thus is easily submerged by noise, so that the specific position of muon incidence to the muon detector cannot be accurately determined. SUMMARY

[0003] Based on the above problems, the present application provides a method and device for determining the incidence position of muons, equipment and a medium.

[0004] The technical scheme provided by the present application is as follows:

[0005] The present application provides a method for determining the incidence position of muons, which comprises:

[0006] After receiving the mth signal with an amplitude greater than a first threshold value and less than a second threshold value from a muon detection device, if an nth signal with an amplitude greater than the second threshold value is received from the muon detection device, an nth time corresponding to the nth signal is acquired; wherein the mth signal and the nth signal comprise a signal obtained by an anode wire of a detection device of the muon detection device sensing ions ionized when the muon is captured by the detection device; m is an integer greater than or equal to 1; n is an integer greater than m;

[0007] Based on the nth time, the incidence time of the muon to the detection device is determined.

[0008] Based on the incidence time, the incidence position of the muon to the detection device is determined.

[0009] In some embodiments, the determination of the incidence time of the muon to the detection device based on the nth time comprises:

[0010] The mth signal is delayed to obtain a delayed mth signal;

[0011] If the amplitude of the delayed mth signal is greater than the first threshold value at the nth time, the incidence time is determined based on the nth time.

[0012] In some embodiments, the determination of the incidence time based on the nth time comprises:

[0013] acquire a time delay duration for delaying the mth signal;

[0014] determine the incidence time as a difference between the nth time and the time delay duration.

[0015] In some embodiments, the delaying the mth signal to obtain a delayed mth signal comprises:

[0016] delaying the mth signal through a first transmission path to obtain a delayed mth signal;

[0017] The method further comprises:

[0018] receiving the nth signal from a second transmission path; wherein the first transmission path and the second transmission path are arranged in parallel.

[0019] In some embodiments, the method further comprises:

[0020] acquiring a time delay duration of the time delay operation and a trigger time of the time delay operation;

[0021] if a low-level signal is received from the first transmission path within the time delay duration starting from the trigger time, discarding the delayed mth signal.

[0022] In some embodiments, a back control unit is arranged between the first transmission path and the second transmission path; the method further comprises:

[0023] if it is detected that the second transmission path outputs the nth signal, resetting the first transmission path through the back control unit.

[0024] In some embodiments, the first transmission path and the second transmission path are respectively connected to a signal amplification circuit; the signal amplification circuit is configured to amplify signals transmitted by the muon detection device; the method further comprises:

[0025] acquiring an attribute parameter of the signal amplification circuit;

[0026] determining the time delay duration of the time delay operation based on the attribute parameter.

[0027] In some embodiments, the muon penetrates into the detection device through the material to be detected; the method further comprises:

[0028] determining a deflection angle of the muon based on the incidence position;

[0029] determining a type of the material to be detected based on the deflection angle.

[0030] The embodiment of the present application further provides a muon incident position determination device, the device comprises:

[0031] The acquisition module is configured to, after receiving the mth signal with an amplitude greater than the first threshold value and less than the second threshold value from the muon detection device, acquire an nth time corresponding to an nth signal if the nth signal with an amplitude greater than the second threshold value is received from the muon detection device, wherein the mth signal and the nth signal comprise signals obtained by an anode wire of a detection device of the muon detection device in response to ions ionized when the muon is captured by the detection device, m is an integer greater than or equal to 1, and n is an integer greater than m;

[0032] The determination module is configured to determine an incident time of the muon to the detection device based on the nth time, and determine an incident position of the muon to the detection device based on the incident time.

[0033] The embodiment of the present application further provides an electronic device, which comprises a processor and a memory, wherein the memory stores a computer program, and the computer program is executed by the processor to implement the muon incident position determination method according to any one of the preceding embodiments.

[0034] The embodiment of the present application further provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor of an electronic device to implement the muon incident position determination method according to any one of the preceding embodiments.

[0035] The muon incident position determination method provided by the embodiment of the present application, after receiving the mth signal with an amplitude greater than the first threshold value and less than the second threshold value from the muon detection device, if the nth signal with an amplitude greater than the second threshold value is received from the muon detection device, the nth time corresponding to the nth signal is acquired, since the second threshold value is greater than the first threshold value, through the continuous detection of the mth signal and the nth signal and the differential comparison of different threshold values, not only the continuous tracking of the electrical signal transmitted by the muon detection device can be realized, and the probability that the effective signal transmitted by the muon detection device is submerged by noise can be reduced, but also the identification probability of the effective signal transmitted by the muon detection device can be improved; and since the amplitude of the nth signal is greater than the second threshold value, through determining the incident time of the muon to the detection device based on the nth time, the probability that the incident time is misjudged as the excitation time of the noise signal can be reduced, thereby improving the accuracy of the incident time; at the same time, through determining the incident position of the muon to the detection device based on the incident time, the accuracy of the incident position can be greatly improved, thereby laying a data foundation for accurately tracking and capturing the muon. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1A flowchart of a method for determining the incident position of muons provided by an embodiment of the present application is shown in FIG. 1.

[0037] Figure 2 A schematic diagram of a setting structure of a first transmission path and a second transmission path provided by an embodiment of the present application is shown in FIG. 2.

[0038] Figure 3A A schematic diagram of time-domain variation of an output electrical signal of a preamplifier circuit provided by an embodiment of the present application is shown in FIG. 3.

[0039] Figure 3B is a schematic diagram of the principle of delaying the mth electrical signal corresponding to Figure 3A

[0040] A schematic diagram of a circuit structure for determining the incident position of muons provided by an embodiment of the present application is shown in FIG. 4. Figure 4

[0041] A schematic diagram of a device for determining the incident position of muons provided by an embodiment of the present application is shown in FIG. 5. Figure 5

[0042] A schematic diagram of an electronic device provided by an embodiment of the present application is shown in FIG. 6. Figure 6 DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.

[0044] It should be understood that the specific embodiments described herein are merely intended to explain the present application and not to limit the present application.

[0045] Cosmic ray muon imaging technology is a new type of non-destructive imaging technology developed in recent years. With the help of the strong penetrating ability of cosmic ray muons and the sensitivity to high atomic number materials, cosmic ray muon imaging technology has obvious technical advantages in the field of non-destructive imaging of heavy nuclear materials, and has broad application prospects in the fields of nuclear security, nuclear waste measurement and treaty verification.

[0046] The principle of cosmic ray muon imaging for detecting fissile materials is to determine the type of fissile materials by measuring the deflection angle of cosmic ray muons passing through the fissile materials. The resolution capability of fissile materials or heavy nuclear materials depends on the position resolution accuracy of the position detection sensor for cosmic ray muon tracks. The position resolution accuracy of the position detection sensor for cosmic ray muon tracks depends largely on the accuracy of the drift time of ions obtained by the position detection sensor for ray ionization, so real-time accurate detection of ions obtained by the position detection sensor for ray ionization is particularly important.

[0047] ​In actual applications, the electrical signal transmitted by the position sensitive detector needs to be amplified by an amplification circuit for subsequent processing circuit analysis to determine whether the electrical signal contains an effective electrical signal corresponding to the ions generated by the ionization of the rays. However, the traditional current-type amplification circuit and the integral-type amplification circuit either amplify a large amount of noise or have a slow reaction speed, and thus are not suitable for amplifying the electrical signal transmitted by the position sensitive detector.

[0048] To solve the above technical problems, a technical solution is provided in the related art for amplifying the electrical signal transmitted by the position sensitive detector by using a current-voltage (I-V) amplifier, which has a small amplification noise and a fast reaction speed, and is suitable for measuring the drift time of various position sensitive detectors. However, because the anode wire of the drift tube in the position sensitive detector is long, slight interference around the position sensitive detector can generate complex and frequent noise, so that the effective signal corresponding to the muon incidence is often hidden in the noise when it first appears. In addition, because the position of the ionization of the rays in the drift tube and the drift speed of the ions are different, the time for the effective signal to be hidden in the noise range after being generated is also different, which is not conducive to the accurate measurement of the effective signal.

[0049] Based on the above problems, the embodiments of the present application provide a method, device, equipment and medium for determining the incidence position of a muon.

[0050] The method for determining the incidence position of a muon provided by the embodiments of the present application can be implemented by a processor of an electronic device. The processor can be at least one of an Application Specific Integrated Circuit (ASIC), a Digital Signal Processor (DSP), a Digital Signal Processing Device (DSPD), a Programmable Logic Device (PLD), a Field Programmable Gate Array (FPGA), a Central Processing Unit (CPU), a controller, a microcontroller, and a microprocessor.

[0051] Figure 1 A flowchart of the method for determining the incidence position of a muon provided by the embodiments of the present application is shown in FIG. 1, which can include the following steps: Figure 1

[0052] ​Step 101, after receiving the mth signal with an amplitude greater than the first threshold value and less than the second threshold value from the muon detection device, if the nth signal with an amplitude greater than the second threshold value is received from the muon detection device, the nth time corresponding to the nth signal is obtained.

[0053] The mth signal and the nth signal include signals sensed by an anode wire of a detection device of the muon detection device when a muon is captured by the detection device and ions ionized by the muon are ionized.

[0054] For example, if the nth signal with an amplitude greater than the second threshold value is not received from the muon detection device after the mth signal with an amplitude greater than the first threshold value and less than the second threshold value is received from the muon detection device, the operation of obtaining the nth time corresponding to the nth signal can not be performed.

[0055] In an embodiment, the muon detection device can include a detection device capable of capturing muons. For example, the muon detection device can include a position detection sensor such as a drift tube detector, wherein the position detection accuracy of the drift tube detector can reach 1 mm. In actual applications, the electrical signal output by the drift tube detector can be sent to a subsequent analog-to-digital converter (ADC) circuit for processing after processing. In order to extract accurate time information from the electrical signal, the subsequent ADC circuit needs to have the characteristics of fast signal rise, low noise, and wide bandwidth.

[0056] In an embodiment, the detection device can include a hollow circular tube of metal and an anode wire located at the geometric center of the hollow circular tube. For example, the hollow circular tube can be an aluminum circular tube.

[0057] In an embodiment, the anode wire can be made of metal. In this way, when the ions ionized after the muon is captured by the hollow circular tube of the detection device drift to the anode wire, they can be quickly sensed and generate an electrical signal.

[0058] In an embodiment, an electrical connection path can be established between the muon detection device and the electronic device. In this way, the detection device of the muon detection device can send the electrical signal generated thereby to the electronic device through the above-mentioned electrical connection path, so that the pre-stage amplification circuit of the electronic device can amplify and process the electrical signal.

[0059] In an embodiment, the mth signal and the nth signal can include electrical signals received from the detection device at different times, respectively.

[0060] In an embodiment, the first threshold value and the second threshold value can be predetermined.

[0061] In an embodiment, the first threshold value and the second threshold value can be flexibly adjustable; for example, the first threshold value and the second threshold value can be determined according to detection parameters of the muon detection device, sensitivity of the electronic device, and actual muon detection requirements; for example, the detection parameters can include deployment manners of the muon detection device, such as deployment density, spacing, and quantity of the detection device, etc.; for example, the sensitivity can include a minimum unit for detecting signal amplitude transmitted by the detection device; for example, the muon detection requirements can include detection accuracy of the muon incident position, etc.

[0062] In an embodiment, the first threshold value and the second threshold value can be determined according to noise state of the environment where the muon detection device is located; for example, the first threshold value can be greater than or equal to the average amplitude of white noise of the environment where the muon detection device is located. In actual application, since the anode wire located at the geometric center of the hollow circular tube has a relatively long length, weak interference can cause corresponding noise fluctuation of the anode wire, and the effective signal corresponding to the muon incidence is often hidden in the noise. Therefore, in order to weaken the frequent interference of noise fluctuation, the first threshold value can be set to be slightly greater than the amplitude of noise intensity.

[0063] In an embodiment, the second threshold value can be any positive number greater than the first threshold value; for example, the second threshold value can be a multiple of the first threshold value, such as the second threshold value can be twice the first threshold value. In this way, through the lower first threshold value, the effective signal corresponding to the muon incidence can be captured in advance, and through the higher second threshold value, the effective signal corresponding to the muon incidence can be continuously tracked.

[0064] In an embodiment, the nth moment can include a moment when the detection device detects the nth signal or outputs the nth signal.

[0065] In an embodiment, the nth moment can include a moment when the electronic device detects the nth signal.

[0066] In actual application, since the electrical connection path is established between the detection device and the electronic device, and the transmission speed of the electron in the electrical connection path is the speed of light, the moment when the detection device detects the nth signal, the moment when the detection device outputs the nth signal, and the moment when the electronic device detects the nth signal can be determined as one moment, i.e., the nth moment.

[0067] In an embodiment, the nth moment can be counted in basic units of clock period of the detection device or the electronic device, such as the nth moment is the kth clock period of the detection device or the electronic device; wherein k is an integer greater than 1.

[0068] Step 102, determining the incident time of the muon incident to the detection device based on the nth moment.

[0069] In an embodiment, the incidence time can include the time when the muon is captured by the detection device; for example, the incidence time can include the time when the muon is captured by the hollow cylinder in the detection device.

[0070] In an embodiment, the incidence time can be slightly earlier than the nth moment; for example, the difference between the incidence time and the nth moment can be the drift time of the ion drifting from the hollow cylinder to the central wire.

[0071] In an embodiment, the incidence time can be determined by any of the following ways:

[0072] determining a drift period, determining the difference between the nth moment and the drift period as the incidence time; for example, the drift period can be determined according to the geometry of the hollow part of the hollow cylinder and the distance between the wall of the hollow cylinder and the central wire.

[0073] determining a time processing algorithm, processing the nth moment by the time processing algorithm, and determining the processing result as the incidence time; for example, the time processing algorithm can be determined according to the detection parameters of the muon detection device, the sensitivity of the electronic device, and the actual muon detection requirements.

[0074] Step 103, determining the incidence position of the muon in the detection device based on the incidence time.

[0075] In an embodiment, the incidence position can include the specific position where the muon is captured by the hollow cylinder of the detection device; for example, the incidence position can include the specific position where the muon is captured by the outer wall of the hollow cylinder.

[0076] In an embodiment, the incidence position can be determined by the following ways:

[0077] determining the drift time of the ion based on the incidence time, determining the transmission distance of the ion according to the drift time, and determining the incidence position according to the transmission distance, the geometry of the hollow part of the hollow cylinder, and the distance between the wall of the hollow cylinder and the central wire.

[0078] From the above, the muon incident position determination method provided by the embodiments of the present application can, after receiving the mth signal with an amplitude greater than the first threshold value and less than the second threshold value from the muon detection device, acquire the nth time corresponding to the nth signal if the nth signal with an amplitude greater than the second threshold value is received from the muon detection device. Since the second threshold value is greater than the first threshold value, the continuous detection of the mth signal and the nth signal and the differential comparison based on the difference between different threshold values can not only realize continuous tracking of the electrical signal transmitted by the muon detection device and reduce the probability that the effective signal transmitted by the muon detection device is overwhelmed by noise, but also improve the identification probability of the effective signal transmitted by the muon transmission detection device. In addition, since the amplitude of the nth signal is greater than the second threshold value, the determination of the incident time of the muon incident to the detection device based on the nth time can reduce the probability of misjudging the incident time as the excitation time of the noise signal, thereby improving the accuracy of the incident time. At the same time, the determination of the incident position of the muon in the detection device based on the incident time can greatly improve the accuracy of the incident position, thereby laying a data foundation for accurately tracking and capturing the muon.

[0079] Based on the foregoing embodiments, in the muon incident position determination method provided by the embodiments of the present application, the determination of the incident time of the muon incident to the detection device based on the nth time can be realized in the following manner:

[0080] The mth signal is delayed to obtain a delayed mth signal. If the amplitude of the delayed mth signal is greater than the first threshold value at the nth time, the incident time is determined based on the nth time.

[0081] For example, if the delayed mth signal is not greater than the first threshold value at the nth time, the operation of determining the incident time based on the nth time is not performed.

[0082] In an embodiment, the mth signal can be delayed for a predetermined delay duration to obtain a delayed mth signal. For example, the delay duration can be determined according to the geometric structure of the detection device. For example, the delay duration can be less than or equal to a third threshold value, wherein the third threshold value can be determined according to the noise distribution state in the environment where the muon detection device is located.

[0083] In an embodiment, if the nth signal transmitted by the muon detection device at the nth time is greater than the second threshold value and the delayed mth signal is greater than the first threshold value, it can be indicated that the amplitude of the electrical signal transmitted by the muon detection device is gradually increasing within the delay duration. At this time, the mth signal can be determined as the initial detected effective signal.

[0084] From the above, the method for determining the incident position of muons provided by the embodiments of the present application can be summarized as follows: after delaying the mth signal to obtain the delayed mth signal, if the delayed mth signal is greater than the first threshold value at the nth moment, the incident time is determined based on the nth moment. In this way, by adjusting the delay time of the mth signal, the effective signal transmitted by the muon detection device within the delay time can be tracked comprehensively. In addition, by judging the amplitude of the delayed mth signal at the nth moment, the amplitude correlation of the mth signal and the nth signal can be realized, thereby realizing the dual correlation of the time and amplitude of the mth signal and the nth signal, and further improving the continuous correlation tracking of the effective signal in the electrical signal transmitted by the muon detection device and improving the determination accuracy of the incident time.

[0085] Based on the foregoing embodiments, the method for determining the incident position of muons provided by the embodiments of the present application can be implemented in the following way:

[0086] The delay duration for delaying the mth signal is obtained, and the incident time is determined as the difference between the nth moment and the delay duration.

[0087] In one embodiment, the delay duration can be a predetermined fixed value.

[0088] In one embodiment, the delay duration can be adjusted or determined according to the detection parameters of the muon detection device, the sensitivity of the electronic device, and the actual muon detection requirements, which are not limited by the embodiments of the present application.

[0089] In one embodiment, the nth moment can be the moment when the energy of the ionized ions on the hollow circular tube captured by the detection device is greater than or equal to the energy threshold value, i.e., the moment when the muon rays with energy greater than or equal to the energy threshold value ionize ions on the hollow circular tube; correspondingly, the mth signal can be the electrical signal ionized on the hollow circular tube when the detection device first captures the muon rays with energy less than the energy threshold value.

[0090] In combination with the foregoing description, the delay duration can be the drift time of the nth signal in the detection device, i.e., the difference between the nth moment and the delay duration, which can accurately represent the time when the detection device first captures muons and ionizes ions.

[0091] From the above, the method for determining the incident position of muons provided by the embodiments of the present application can determine the difference between the incident time and the delay time length after obtaining the delay time length of the mth signal. In this way, by adjusting the delay time length, the incident time of muons can be captured comprehensively in various situations. Moreover, the incident time is associated with the n th moment and the delay time length, so that the incident time can accurately represent the time when the muon is initially captured, thereby reducing the probability that the low-amplitude electrical signal is overwhelmed by noise, and further improving the accuracy of the incident time.

[0092] Based on the foregoing embodiments, the method for determining the incident position of muons provided by the embodiments of the present application can obtain the mth signal after delay by delaying the mth signal, which can be achieved by the following methods:

[0093] The first transmission path can perform a delay operation on the mth signal to obtain the mth signal after delay.

[0094] In an embodiment, the first transmission path can be an electrical connection path between the muon detection device and the electronic device, which can realize the transmission and delay operation of the mth signal.

[0095] In an embodiment, the first transmission path can be a post-stage circuit of an amplification circuit connected to the muon detection device, which can also be connected to the electronic device.

[0096] In an embodiment, the first transmission path can be realized by a first comparator. For example, the threshold value of the first comparator can be a first threshold value, that is, the amplification circuit can send the electrical signal transmitted by the muon detection device to the first transmission path, and when the amplitude of the electrical signal is greater than the first threshold value, the first transmission path can output the electrical signal, that is, the mth signal, and also perform a delay operation on the mth signal.

[0097] Correspondingly, the method for determining the incident position of muons provided by the embodiments of the present application can further include the following steps:

[0098] The n th signal is received from the second transmission path.

[0099] The first transmission path and the second transmission path are arranged in parallel.

[0100] In an embodiment, the second transmission path can transmit the n th signal.

[0101] In an embodiment, the second transmission path can be arranged in the same way as the first transmission path, which will not be described here.

[0102] In an embodiment, the second transmission path can be implemented by a second comparator; for example, the threshold value of the second comparator can be a second threshold value, and when the second transmission path receives an electrical signal transmitted by the muon detection device and the amplitude of the electrical signal is greater than the second threshold value, the electrical signal, i.e., the nth signal, can be transmitted in a transparent manner.

[0103] Figure 2 A schematic diagram of the setting structure of the first transmission path and the second transmission path provided by the embodiment of the present application is shown in Figure 2 The first transmission path 201 and the second transmission path 202 are arranged in parallel, and the first transmission path 201 can include a first comparator 203 and a delay unit 204 connected in series, and the second transmission path 202 can include a second comparator 205; the first transmission path 201 and the second transmission path 202 are arranged between a preamplification circuit 206 and an AND gate unit 207.

[0104] For example, the preamplification circuit 206 is used for amplifying the electrical signal transmitted by the muon detection device, and the amplified electrical signal is transmitted to the first transmission path 201 and the second transmission path 202; the threshold value of the first transmission path 201 can be a first threshold value, the threshold value of the second transmission path 202 can be a second threshold value, and the second threshold value can be twice the first threshold value.

[0105] For example, if the amplitude of the mth signal output by the preamplification circuit 206 is greater than the first threshold value and less than the second threshold value, the first comparator 203 can output the mth signal, and the mth signal is subjected to delay processing by the delay unit 204, so as to obtain a delayed mth signal.

[0106] For example, if the amplitude of the nth signal output by the preamplification circuit 206 is greater than the second threshold value, the second comparator 205 can output the nth signal.

[0107] For example, at the nth moment, the delayed mth signal and the nth signal are transmitted to the AND gate unit 207, at this time, if the delayed mth signal and the nth signal are both greater than the first threshold value, the AND gate unit 207 can output a high level to indicate that the nth signal corresponding to the nth moment is a valid signal, so as to trigger the recording of the nth moment by the subsequent circuit.

[0108] Figure 3A A schematic diagram of the time-domain change of the electrical signal output by the preamplification circuit provided by the embodiment of the present application is shown in Figure 3A In the two-dimensional coordinate system, the horizontal coordinate can be time t, and the unit can be millisecond, the vertical coordinate can be voltage v, and the unit can be millivolt, and the curve in the two-dimensional coordinate system represents the statistical result of the electrical signal output by the preamplification circuit over time.

[0109] InFigure 3A In the process, after muons are captured by the detection device, the ions ionized are sensed by the anode wire. At time t1, the output amplitude of the muon detection device is greater than the first threshold v1 / 2 and less than the second threshold v1, such as the m-th signal. As the number of captured muons increases or the energy of the muons increases, the amplitude of this signal can gradually increase, so that at time t2, the output amplitude of the muon detection device can be greater than the second threshold v1, i.e., the n-th signal.

[0110] In practical applications, the threshold value of the comparator, such as the first comparator in the aforementioned embodiment, can be set to v1 / 2. In this way, the first comparator can filter invalid signals, such as noise signals, and screen and filter valid signals.

[0111] For example, in the embodiments of this application, since the first threshold is less than the second threshold, the first threshold can be called the discrimination threshold, which is used to detect in advance whether there is a valid signal corresponding to the muon incident in the noise region through the first comparator.

[0112] Figure 3B Is with Figure 3A The corresponding schematic diagram illustrates the principle of delaying the m-th electrical signal. (See attached diagram.) Figure 3B As shown, when the electrical signal at time t1 is greater than the first threshold and less than the second threshold, the first comparator can output a high level, i.e., the m-th signal, and delay the m-th signal to obtain the delayed m-th signal. At the same time, when the amplitude of the electrical signal at time t2 is greater than the second threshold, the second comparator can output the n-th signal. That is, at time t2, both the delayed m-th signal and the n-th signal are in a high-level state. At this time, the incident time can be determined as the difference between the n-th moment when the second transmission path outputs the n-th signal and the delay duration of the delay unit.

[0113] As can be seen from the above, in the method for determining the incident position of a muon provided in this application embodiment, the m-th signal is delayed by performing a delay operation on the m-th signal through the first transmission path to obtain the delayed m-th signal, and the n-th signal is received from the second transmission path. In this way, the m-th signal and the n-th signal are obtained through different transmission paths, which can reduce the mutual interference between the m-th signal and the n-th signal. Furthermore, by setting the first transmission path and the second transmission path in parallel, the electrical signals transmitted by the muon detection device can be processed simultaneously and differently, thereby further reducing the mutual interference between the m-th signal and the n-th signal.

[0114] Based on the foregoing embodiments, the method for determining the incident position of a muon provided in this application may further include the following steps:

[0115] acquire a delay time length of the delay operation and a trigger time of the delay operation; and discard the delayed mth signal if a low-level signal is received from the first transmission path within the delay time length starting from the trigger time.

[0116] In an example, if no low-level signal is received from the first transmission path, the operation of discarding the delayed mth signal is not performed.

[0117] In an embodiment, when the delay operation is triggered, the trigger time of the delay operation can be recorded.

[0118] In an embodiment, when the delay operation is triggered, a timer can be created, and the amplitude of the electrical signal output by the first transmission path can be detected within the valid time of the timer; in an example, the timeout time of the timer can be the delay time length.

[0119] In an embodiment, the first comparator included in the first transmission path can compare the amplitude of the electrical signal received by the first comparator with a first threshold value; if the amplitude of the electrical signal received by the first transmission path is greater than the first threshold value within the delay time length starting from the trigger time, the first transmission path does not output a low-level signal; accordingly, if the amplitude of the electrical signal received by the first transmission path is less than the first threshold value within the delay time length starting from the trigger time, the first transmission path can output a low-level signal; in an example, the amplitude of the electrical signal received by the first transmission path being less than the first threshold value can indicate that the number of muons captured by the muon detection device is small, or that the muon detection device does not continuously capture muons.

[0120] As can be seen from the above, the method for determining the incident position of muons provided by the embodiments of the present application, after acquiring the delay time length and the trigger time of the delay operation, if a low-level signal is received from the first transmission path within the delay time length starting from the trigger time, the delayed mth signal is discarded. Thus, within the delay time length starting from the trigger time, the level of the electrical signal received from the first transmission path is judged, so as to determine whether to discard the delayed mth signal, thereby realizing continuous tracking processing of the electrical signal transmitted by the muon detection device within the delay time length starting from the trigger time; and after receiving a low-level signal from the first transmission path, the delayed mth signal is discarded, which can also simplify the processing procedure of the delayed mth signal by the subsequent circuit.

[0121] Based on the foregoing embodiments, in the method for determining the incident position of muons provided by the embodiments of the present application, a feedback unit is arranged between the first transmission path and the second transmission path.

[0122] In an embodiment, the feedback unit can include a circuit for realizing state control or switching between the first transmission path and the second transmission path.

[0123] In an embodiment, the backstepping unit can include a circuit unit capable of achieving state synchronization between the first transmission path and the second transmission path.

[0124] Exemplarily, the backstepping unit can be configured as shown in Figure 2 As shown, the output end of the second comparator 205 can be connected to the first end of the backstepping unit 208, and the second end of the backstepping unit 208 can be connected to the control signal input end of the first comparator 203, that is, the backstepping unit 208 can receive the signal or instruction transmitted by the second transmission path, and transmit the signal or instruction to the first comparator 203, or process the signal or instruction to obtain a target instruction, and transmit the target instruction to the first comparator 203.

[0125] Correspondingly, the method for determining the incident position of the muon provided by the embodiments of the present application can further include the following steps:

[0126] If the n-th signal output by the second transmission path is detected, the backstepping unit is used to reset the first transmission path.

[0127] Exemplarily, if the n-th signal output by the second transmission path is not detected, the operation of resetting the first transmission path by the backstepping unit can not be performed.

[0128] In an embodiment, the backstepping unit can detect the electrical signal output by the second transmission path, and if the backstepping unit detects the n-th signal output by the second transmission path, the backstepping unit can generate a target instruction and transmit the target instruction to the first transmission path.

[0129] In an embodiment, the resetting can include resetting the first threshold of the first comparator in the first transmission path, or controlling the first comparator to stop outputting the electrical signal.

[0130] In an embodiment, after the m-th signal is discarded after the delay, or the m-th signal and the n-th signal are both high at the n-th moment after the delay, and the Figure 2 As shown, the AND gate circuit outputs a high level to further determine the incident time, and then the first comparator in the first transmission path can be set, that is, the threshold of the first comparator is set to the first threshold.

[0131] From the above, the method for determining the incident position of muons provided by the embodiments of the present application, the first transmission path and the second transmission path are provided with a feedback unit, so that the first transmission path and the second transmission path can realize the synchronization between the states, data and control instructions; and if the n th signal output by the second transmission path is detected, the first transmission path is reset by the feedback unit, thereby reducing the interference between the processing process of the electrical signal sensed after capturing muons this time and the processing process of the electrical signal sensed after capturing muons next time.

[0132] Based on the foregoing embodiments, the method for determining the incident position of muons provided by the embodiments of the present application, the first transmission path and the second transmission path are respectively connected to a signal amplification circuit; the signal amplification circuit is used for amplifying and processing the signal transmitted by the muon detection device.

[0133] In an embodiment, the signal amplification circuit here can be a preamplifier in the signal processing circuit. Figure 2

[0134] In an embodiment, the signal amplification circuit can perform power amplification processing on the electrical signal transmitted by the muon detection device, such as amplification processing on the voltage amplitude and / or current amplitude of the electrical signal.

[0135] In an embodiment, the signal amplification circuit can be an I-V amplification circuit.

[0136] Correspondingly, the method for determining the incident position of muons provided by the embodiments of the present application can further include the following steps:

[0137] Obtaining an attribute parameter of the signal amplification circuit; determining the delay time length of the delay operation based on the attribute parameter.

[0138] In an embodiment, the attribute parameter can include at least one of a signal processing noise parameter, a signal amplification speed, a signal amplification gain and a working bandwidth of the signal amplification circuit; for example, the signal processing noise parameter can include the distribution state of the signal amplification noise, etc.; for example, the signal amplification speed can include the time length from receiving the signal to outputting the amplified signal of the signal amplification circuit.

[0139] In an embodiment, the delay time length can be determined according to the front-end rise time of the amplifier in the attribute parameter; for example, the delay time length can be proportional to the front-end rise time of the amplifier.

[0140] ​From the above, the method for determining the incident position of muons provided by the embodiments of the present application, the first transmission path and the second transmission path are connected to the signal amplification circuit, and the signal amplification circuit is used for amplifying the signal transmitted by the muon detection device, so that the first transmission path and the second transmission path can simultaneously receive the amplified electrical signal output by the signal amplification circuit, thereby improving the detection and transmission efficiency of the mth signal and the nth signal; and after obtaining the attribute parameters of the signal amplification circuit, the delay time of the delay operation can be determined based on the attribute parameters, so that the delay time can be determined according to the attribute parameters of the signal amplification circuit, so that the accuracy of the delay time can be improved, and when the signal amplification circuit is replaced or the attribute parameters of the signal amplification circuit change, the delay time can be adaptively adjusted and changed, thereby realizing the automatic and intelligent determination of the delay time.

[0141] Based on the foregoing embodiments, the method for determining the incident position of muons provided by the embodiments of the present application, the muon penetrates the material to be detected and then enters the detection device.

[0142] In an embodiment, the material to be detected can be any material; for example, the material to be detected can be in a solid or liquid state, or in a state of coexistence of solid and liquid.

[0143] In an embodiment, the material to be detected can be a material with a high atomic number, such as a heavy nucleus material.

[0144] Correspondingly, the method for determining the incident position of muons provided by the embodiments of the present application can further include the following steps:

[0145] Based on the incident position, the deflection angle of the muon is determined; and based on the deflection angle, the type of the material to be detected is determined.

[0146] In an embodiment, the muon detection device can be arranged in an array, so that the detection device can also be arranged in an array, wherein the positions of the detection devices in the array can be known. Then, after the muon penetrates the material to be detected, if the hth detection device outputs an electrical signal and the amplitude of the electrical signal is greater than a first threshold value, the incident position of the muon can be roughly determined by the hth detection device, and the mth signal and the nth signal obtained from the electrical signal continuously transmitted by the hth detection device can accurately determine the specific incident point of the muon at the hth detection device, thereby more accurately determining the incident position of the muon at the hth detection device. Wherein h is an integer greater than or equal to 1.

[0147] In an embodiment, the radiation direction of the muon when it does not penetrate the material to be detected can be known, and the deflection angle of the muon relative to the above-mentioned radiation direction can be determined based on the incident position of the muon at the hth detection device determined according to the foregoing embodiments.

[0148] In an embodiment, the type of the to-be-tested substance can include whether the to-be-tested substance is a heavy nuclear material.

[0149] In practical applications, the deflection angle of the cosmic muon after penetrating the to-be-tested substance is closely related to the atomic number of the to-be-tested substance. Therefore, after the deflection angle of the muon is determined, the type of the to-be-tested substance can be determined according to the correlation between the deflection angle and the atomic number of the to-be-tested substance.

[0150] As can be seen from the above, in the method for determining the incidence position of the muon provided by the embodiments of the present application, the muon penetrates the to-be-tested substance and then is incident to the detection device, the deflection angle of the muon is determined based on the incidence position, and the type of the to-be-tested substance is determined based on the deflection angle. In this way, when the accuracy of the incidence position of the muon is improved, the deflection angle of the muon determined based on the incidence position can also be improved accordingly, so that the accuracy of the type of the to-be-tested substance can be improved.

[0151] Figure 4 A circuit structure schematic diagram for determining the incidence position of the muon provided by the embodiments of the present application is shown in FIG. 1, which includes a first transmission path 201, a second transmission path 202, and a preamplification circuit 206. Figure 4 The first transmission path 201 can be composed of a comparator U11 and a delay module U17, wherein the comparator U11 can be the first comparator in the foregoing embodiments, and the delay module U17 can be the delay unit in the foregoing embodiments. The second transmission path 202 can include a comparator U12, wherein the comparator U12 can be the second comparator in the foregoing embodiments. The preamplification circuit 206 can include a series of resistors, capacitors, and an amplifier U13, which is used to amplify the electrical signal transmitted by the muon detection device and transmit the amplified electrical signal to the first transmission path 201 and the second transmission path 202 through resistors R25, respectively.

[0152] For example, the threshold value of the comparator U11 can be a first threshold value, and the threshold value of the comparator U12 can be a second threshold value. For example, when the amplitude of the amplified electrical signal is greater than the first threshold value and less than the second threshold value, the comparator U11 can output a rising edge signal, i.e., an mth signal, in a very short time, transmit the mth signal to the A port of the delay module U17 to trigger the delay module U17 to generate a positive pulse with a width of 40 ns, i.e., a delayed mth signal, and record the delay time of 40 ns in the temporary memory of the FPGA. At the same time, the output port of the comparator U11 is also synchronously input to the CLR port of the delay module U17, and whether the comparator U11 outputs a low-level signal within 40 ns is detected through the port. If the comparator U11 outputs a low-level signal within 40 ns, the positive pulse with a width of 40 ns is discarded.

[0153] For example, the 40 ns can be determined according to the attribute parameters of the preamplification circuit.

[0154] Exemplarily, if the amplitude of the electrical signal received by the comparator U12 is greater than the second threshold value within the positive pulse duration of 40 ns, the nth signal is output, and the nth signal is subjected to an AND operation with the positive pulse of 40 ns, if the result of the AND operation is 1, the result is sent to the FPGA to determine that the electrical signal received by the comparator U12 is a valid electrical signal, at the same time, the time when the comparator U12 outputs the nth signal, i.e., the nth moment, is recorded, and then the nth moment is stored in the time information queue.

[0155] Exemplarily, after confirming the nth moment, the difference between the nth moment and 40 ns can be determined as the incidence time of the muon, and then the incidence position of the muon is determined according to the incidence time, and the deflection angle of the muon is determined according to the incidence position, so as to determine the type of the substance to be detected penetrated by the muon.

[0156] Exemplarily, the positive electrode of the comparator U11 and the comparator U12 can input the amplified electrical signal output by the preamplifier circuit 206, and the negative electrode can be connected to the threshold value; and the first threshold value can be half of the second threshold value.

[0157] As can be seen from the above, through the above-mentioned circuit, the amplitude of the signal output by the preamplifier circuit can be detected in advance through the first transmission path in the case where the amplitude is comparable to the amplitude of the noise; and the continuous tracking detection of the electrical signal output by the preamplifier circuit can be realized through the second transmission path, so as to reduce the technical problem of detection lag of the electrical signal output by the preamplifier circuit, to realize the discovery of the electrical signal hidden in the noise, and to improve the accuracy of the occurrence time of the electrical signal output by the preamplifier circuit; at the same time, in the case where the preamplifier circuit is connected to the muon detection device, through the above-mentioned circuit, when a small amount of muons are captured by the muon detection device, the electrical signal induced by the ionization of the muons after being captured can be detected in advance, so as to improve the incidence time of the muons incident to the muon detection device.

[0158] Based on the foregoing embodiments, the embodiments of the present application also provide a muon incidence position determination device, Figure 5 The structure diagram of the muon incidence position determination device provided by the embodiments of the present application is shown in Figure 5 As shown in the figure, the device can include:

[0159] The acquisition module 501 is configured to, after receiving the mth signal with an amplitude greater than the first threshold value and less than the second threshold value from the muon detection device, acquire an nth time corresponding to an nth signal if the nth signal with an amplitude greater than the second threshold value is received from the muon detection device; the mth signal and the nth signal include signals obtained by the anode wire of the detection device when the muon is captured by the detection device and ions ionized are inducted; m is an integer greater than or equal to 1; n is an integer greater than m.

[0160] The determination module 502 is configured to determine an incidence time of the muon incident to the detection device based on the nth time, and determine an incidence position of the muon at the detection device based on the incidence time.

[0161] In some embodiments, the device further includes a processing module configured to delay the mth signal to obtain a delayed mth signal.

[0162] The determination module 502 is configured to determine the incidence time based on the nth time if the amplitude of the delayed mth signal is greater than the first threshold value at the nth time.

[0163] In some embodiments, the acquisition module 501 is configured to acquire a delay duration of the delay operation on the mth signal.

[0164] The determination module 502 is configured to determine the incidence time as a difference between the nth time and the delay duration.

[0165] In some embodiments, the processing module is configured to perform a delay operation on the mth signal through a first transmission path to obtain the delayed mth signal.

[0166] The acquisition module 501 is configured to receive the nth signal from a second transmission path; the first transmission path and the second transmission path are arranged in parallel.

[0167] In some embodiments, the acquisition module 501 is configured to acquire a delay duration of the delay operation and a trigger time of the delay operation.

[0168] The processing module is configured to, within the delay duration starting from the trigger time, discard the delayed mth signal if a low-level signal is received from the first transmission path.

[0169] In some embodiments, a feedback unit is arranged between the first transmission path and the second transmission path.

[0170] The processing module is configured to reset the first transmission path through the feedback unit if it is detected that the second transmission path outputs the nth signal.

[0171] In some embodiments, the first transmission path and the second transmission path are respectively connected to a signal amplification circuit; the signal amplification circuit is configured to amplify and process signals transmitted by the muon detection device.

[0172] The acquisition module 501 is used to acquire the attribute parameters of the signal amplification circuit;

[0173] The determination module 502 is used to determine the delay duration of the delay operation based on the attribute parameters.

[0174] In some embodiments, muons penetrate the substance to be tested and are incident on the detection device;

[0175] The determination module 502 is used to determine the deflection angle of the muon based on the incident position; and to determine the type of the analyte based on the deflection angle.

[0176] The muon incident position determination device provided in this application, after receiving the m-th signal with an amplitude greater than a first threshold and less than a second threshold from the muon detection device, if receiving the n-th signal with an amplitude greater than the second threshold from the muon detection device, obtains the n-th time corresponding to the n-th signal. Since the second threshold is greater than the first threshold, by continuously detecting the m-th and n-th signals and combining the differential comparison of different thresholds, it is possible not only to continuously track the electrical signal transmitted by the muon detection device and reduce the probability that the effective signal transmitted by the muon detection device is submerged by noise, but also to improve the recognition probability of the effective signal transmitted by the muon detection device. Furthermore, since the amplitude of the n-th signal is greater than the second threshold, by determining the incident time of the muon to the detection device based on the n-th time, the probability of misjudging the incident time as the excitation time of a noise signal can be reduced, thereby improving the accuracy of the incident time. At the same time, by determining the incident position of the muon in the detection device based on the incident time, the accuracy of the incident position can be greatly improved, thus laying a data foundation for accurate tracking and capturing of muons.

[0177] Based on the foregoing embodiments, this application also provides an electronic device. Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Figure 6 As shown, the electronic device may include a processor 601 and a memory 602; wherein, the memory 602 stores a computer program, which, when executed by the processor 601, is capable of implementing the method for determining the incident position of a muon as provided in any of the preceding embodiments.

[0178] The aforementioned processor can be at least one of ASIC, DSP, DSPD, PLD, FPGA, CPU, controller, microcontroller, and microprocessor.

[0179] The memory can be a volatile memory (volatile memory), such as a random access memory (Random Access Memory, RAM); or a non-volatile memory (non-volatile memory), such as a read-only memory (Read-Only Memory, ROM), a flash memory, a hard disk drive (Hard Disk Drive, HDD) or a solid state disk (Solid State Disk, SSD); or a combination of the above types of memories, and provides instructions and data to the processor.

[0180] Based on the foregoing embodiments, the embodiments of the present application also provide a computer readable storage medium, the storage medium stores a computer program, and the computer program is executed by a processor of an electronic device to realize the muon incident position determination method provided in any one of the foregoing embodiments.

[0181] The above description of various embodiments tends to emphasize the differences between various embodiments, and the same or similar parts can be referred to each other, and for the sake of brevity, the same or similar parts will not be described herein.

[0182] The methods disclosed in the various method embodiments provided by the present application can be combined arbitrarily without conflict to obtain new method embodiments.

[0183] The features disclosed in the various product embodiments provided by the present application can be combined arbitrarily without conflict to obtain new product embodiments.

[0184] The features disclosed in the various method or device embodiments provided by the present application can be combined arbitrarily without conflict to obtain new method or device embodiments.

[0185] It should be noted that the computer readable storage medium above can be a Read Only Memory (ROM), a Programmable Read-Only Memory (PROM), an Erasable Programmable Read-Only Memory (EPROM), an Electrically Erasable Programmable Read-Only Memory (EEPROM), a Ferromagnetic Random Access Memory (FRAM), a Flash Memory, a magnetic surface memory, an optical disc, or a Compact Disc Read-Only Memory (CD-ROM) memory, etc. It can also be various electronic devices including one or any combination of the above memories, such as a mobile phone, a computer, a tablet device, a personal digital assistant, etc.

[0186] It should be noted that in this paper, the term "include", "contain" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or includes elements inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0187] The above sequence number of the embodiments of the present application is only for description, not representing the advantages and disadvantages of the embodiments.

[0188] Through the above description of the embodiments, those skilled in the art can clearly understand that the above-mentioned embodiment method can be realized by software plus necessary general hardware nodes, of course, it can also be realized by hardware, but in many cases the former is a better implementation. Based on such understanding, the technical solutions of the present application can be embodied in the form of a software product in essence or in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium (such as ROM / RAM, magnetic disc, optical disc), and includes a plurality of instructions for making a terminal device (which can be a mobile phone, computer, server, air conditioner, or network device, etc.) execute the method described in each embodiment of the present application.

[0189] The computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart block or blocks. Figure 1 one or more flow or blocks. Figure 1 one or more flow or blocks.

[0190] These computer program instructions can also be stored in a computer readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer readable memory produce an article of manufacture including instructions which implement the function specified in the flowchart block or blocks. Figure 1 one or more flow or blocks. Figure 1 one or more flow or blocks.

[0191] The computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart block or blocks. Figure 1 one or more flow or blocks. Figure 1 one or more flow or blocks.

[0192] The above merely provides the preferred embodiment of the present application, and is not intended to limit the patent scope of the present application, and any equivalent structure or equivalent flow transformation according to the content of the present application specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method of determining an incident position of a muon, characterized by, The method comprises: after receiving the mth signal with an amplitude greater than a first threshold value and less than a second threshold value from a muon detection device, if an nth signal with an amplitude greater than the second threshold value is received from the muon detection device, an nth time corresponding to the nth signal is obtained; wherein the mth signal and the nth signal include signals obtained by an anode wire of a detection device of the muon detection device when ions ionized when the muon is captured by the detection device are inducted; m is an integer greater than or equal to 1; n is an integer greater than m; based on the nth time, an incidence time of the muon incident to the detection device is determined; based on the incidence time, an incidence position of the muon at the detection device is determined; wherein the determination of the incidence time of the muon incident to the detection device based on the nth time comprises: delaying the mth signal to obtain a delayed mth signal; if the amplitude of the delayed mth signal is greater than the first threshold value at the nth time, the incidence time is determined based on the nth time; the incidence position is determined by: based on the incidence time, a drift time of the ions is determined, the transmission distance of the ions is determined according to the drift time, and the incidence position is determined according to the transmission distance, combined with the geometric structure of the hollow part of the hollow circular tube and the distance between the tube wall and the center wire of the hollow circular tube; the detection device comprises the hollow circular tube.

2. The method of claim 1, wherein, the determination of the incidence time based on the nth time comprises: obtaining the delay time of the delay of the mth signal; the incidence time is the difference between the nth time and the delay time.

3. The method of claim 1, wherein, the delaying of the mth signal to obtain a delayed mth signal comprises: performing a delay operation on the mth signal through a first transmission path to obtain a delayed mth signal; the method further comprises: receiving the nth signal from a second transmission path; wherein the first transmission path and the second transmission path are arranged in parallel.

4. The method of claim 3, wherein, the method further comprises: obtaining the delay time of the delay operation and the trigger time of the delay operation; if a low-level signal is received from the first transmission path within the delay time starting from the trigger time, the delayed mth signal is discarded.

5. The method according to claim 3 or 4, characterized in that, a feedback unit is arranged between the first transmission path and the second transmission path; the method further comprises: if it is detected that the second transmission path outputs the nth signal, the first transmission path is reset through the feedback unit.

6. The method according to claim 3 or 4, characterized in that, the first transmission path and the second transmission path are respectively connected to a signal amplification circuit; the signal amplification circuit is used for amplifying the signal transmitted by the muon detection device; the method further comprises: obtaining the attribute parameters of the signal amplification circuit; based on the attribute parameters, the delay time of the delay operation is determined.

7. The method of claim 1, wherein, the muon penetrates the to-be-detected substance and is incident to the detection device; the method further comprises: based on the incidence position, the deflection angle of the muon is determined; based on the deflection angle, the type of the to-be-detected substance is determined.

8. An apparatus for determining the position of incidence of a muon, characterized in that the device comprises: The acquisition module is configured to, after receiving the mth signal with an amplitude greater than a first threshold value and less than a second threshold value from the muon detection device, acquire an nth time corresponding to an nth signal received from the muon detection device if the amplitude of the nth signal is greater than the second threshold value; wherein the mth signal and the nth signal include signals obtained by an anode wire of a detection device of the muon detection device in response to ions ionized when the muon is captured by the detection device; m is an integer greater than or equal to 1; n is an integer greater than m; The determination module is configured to determine, based on the nth time, an incidence time of the muon incident to the detection device, and determine, based on the incidence time, an incidence position of the muon at the detection device. The determination module is specifically configured to obtain a delayed mth signal by delaying the mth signal; if the amplitude of the delayed mth signal is greater than the first threshold value at the nth time, determine the incidence time based on the nth time; determine a drift time of the ions based on the incidence time, determine a transmission distance of the ions according to the drift time, and determine the incidence position according to the transmission distance, in combination with a geometric structure of a hollow part of a hollow circular tube and a distance between a tube wall of the hollow circular tube and a central wire; and the detection device includes the hollow circular tube.

9. An electronic device, comprising: The device includes a processor and a memory; wherein the memory stores a computer program; and the computer program, when executed by the processor, can implement the method for determining the incidence position of the muon according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The storage medium stores a computer program; and the computer program, when executed by a processor of an electronic device, can implement the method for determining the incidence position of the muon according to any one of claims 1 to 7.

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