A silicon carbide schottky diode chip, circuit board assembly, and electronic device

Abstract

This application provides a silicon carbide Schottky diode chip, a circuit board assembly, and an electronic device. The silicon carbide Schottky diode chip includes multiple Schottky diode units. Each Schottky diode unit includes a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer, and a termination structure. By forming multiple Schottky diode units with equal overcurrent capabilities, a Schottky diode unit with a failure point does not affect other Schottky diode units, reducing the possibility of complete failure of the silicon carbide Schottky diode chip due to a failure point.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a silicon carbide Schottky diode chip, circuit board assembly, and electronic device. Background Technology

[0002] Currently, silicon carbide electronic devices are widely used due to their excellent electrical properties. With the rapid development of electrical equipment, the silicon carbide electronic device industry is also developing in line with the trend. Among them, silicon carbide Schottky diode chips are the most widely used.

[0003] For silicon carbide Schottky diode chips with high current properties, their chip area is relatively large compared to other ordinary silicon carbide Schottky diode chips. However, all silicon carbide Schottky diode chips are currently manufactured as a single unit. If a single failure point exists in a large silicon carbide Schottky diode chip, the entire silicon carbide Schottky diode chip will fail and become unusable. Summary of the Invention

[0004] The main objective of this application is to provide a silicon carbide Schottky diode chip, a circuit board assembly, and an electronic device, which aims to enable the silicon carbide Schottky diode chip to still operate in a matching current environment even when there is a failure point.

[0005] To achieve the above objectives, a first aspect of the present application provides a silicon carbide Schottky diode chip, the silicon carbide Schottky diode chip comprising a plurality of Schottky diode units;

[0006] For each of the Schottky diode units, the Schottky diode unit includes: a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer, and a termination structure.

[0007] In some possible embodiments of this application, for each of the Schottky diode units, the Schottky diode unit includes a base unit; a plurality of the Schottky diode units include:

[0008] Multiple central Schottky diode units are in contact with each other to form a central matrix;

[0009] Multiple side-side Schottky diode units are in contact with each other to form multiple side-side matrices;

[0010] Multiple corner Schottky diode units, each of the corner Schottky diode units contacting two of all the side matrices to form a first enclosing circle that contacts and encloses the central matrix.

[0011] In some possible embodiments of this application, for each of the Schottky diode units, the termination structure forms a plurality of floating field rings on the N-type epitaxial layer.

[0012] In some possible embodiments of this application, for each of the Schottky diode units, the termination structure forms multiple field plate structures on an N-type epitaxial layer.

[0013] In some possible embodiments of this application, the base units of all the central Schottky diode units are equidistant from each other.

[0014] In some possible embodiments of this application, the base units of all the central Schottky diode units are spaced apart by a first distance, and the base units of all the side Schottky diode units are spaced apart by the first distance;

[0015] The base unit of each of the side-side Schottky diode units is spaced from the edge of the silicon carbide Schottky diode chip by a second distance, the second distance being greater than the first distance.

[0016] In some possible embodiments of this application, for each corner Schottky diode unit, the base unit of the corner Schottky diode unit is spaced apart from the base unit of the side-contact Schottky diode unit by a first distance, and spaced apart from the edge of the silicon carbide Schottky diode chip by a second distance, wherein the side-contact Schottky diode unit is the side-contact Schottky diode unit that contacts the corner Schottky diode unit in the side matrix that contacts the corner Schottky diode unit.

[0017] In some possible embodiments of this application, for each of the central Schottky diode units in contact with the side matrix, the shortest interval between the base unit of the central Schottky diode unit and the base units of all the side Schottky diode units is the first distance.

[0018] To achieve the above objectives, a second aspect of this application provides a circuit board assembly comprising a silicon carbide Schottky diode chip as described in the first aspect above.

[0019] To achieve the above objectives, a third aspect of this application provides an electronic device comprising a circuit board assembly as described in the second aspect above.

[0020] This application discloses a silicon carbide Schottky diode chip, a circuit board assembly, and an electronic device. The silicon carbide Schottky diode chip includes multiple Schottky diode units. Each Schottky diode unit includes: a cathode metal layer; an N-type substrate layer; an N-type epitaxial layer; an anode metal layer; and a termination structure. By forming multiple Schottky diode units, each Schottky diode unit achieves an equivalent overcurrent capability. When one Schottky diode unit has a failure point, the other Schottky diode units still shunt current normally, allowing the silicon carbide Schottky diode chip to continue operating in a matched current environment, reducing the possibility of complete failure due to a failure point. Attached Figure Description

[0021] Figure 1 This is a top view of the silicon carbide Schottky diode chip provided in the embodiments of this application;

[0022] Figure 2 yes Figure 1 A schematic diagram of the cell structure of a Schottky diode unit;

[0023] Figure 3 yes Figure 2 A schematic diagram of a cellular structure containing a junctional structure;

[0024] Figure 4 yes Figure 2 A schematic diagram of another embodiment of the terminal structure 15.

[0025] Figure label:

[0026] Cell 20, basic unit 21, cell sub-unit 22, central Schottky diode unit 110, central matrix 111, side Schottky diode unit 120, side matrix 121, corner Schottky diode unit 130;

[0027] Cathode metal layer 11;

[0028] N-type substrate layer 12;

[0029] N-type epitaxial layer 13, isolation section 131;

[0030] Anode metal layer 14;

[0031] Terminal structure 15, floating field ring 151. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0034] First, let's analyze some of the terms used in this application:

[0035] Silicon carbide (SiC) is an inorganic compound produced by high-temperature smelting of raw materials such as quartz sand, petroleum coke (or coal coke), and sawdust in an electric resistance furnace. It possesses high thermal conductivity, high breakdown electric field strength, and high maximum current density, making it a high-performance semiconductor. Among them, the hexagonal 4H-type SiC (4H-SiC) has the advantages of high critical breakdown electric field and high electron mobility, making it an excellent semiconductor material for manufacturing high-voltage, high-temperature, and radiation-resistant power semiconductor devices. It is also currently the third-generation semiconductor material with the best overall performance, the highest degree of commercialization, and the most mature technology.

[0036] A Schottky diode, also known as a Schottky barrier diode (SBD), is a semiconductor diode with low forward voltage drop and very fast switching operation. In a Schottky diode, a semiconductor-metal junction is formed between the semiconductor and the metal, creating a Schottky barrier. This Schottky barrier reduces the forward voltage drop and enables the diode to switch very quickly.

[0037] Schottky contact: refers to the region at the metal-semiconductor boundary where the energy bands of the semiconductor bend at the interface when metal and semiconductor materials come into contact, forming a Schottky barrier.

[0038] Currently, silicon carbide electronic devices are widely used due to their excellent electrical properties. With the rapid development of electrical equipment, the silicon carbide electronic device industry is also developing in line with the trend. Among them, silicon carbide Schottky diode chips are the most widely used.

[0039] For silicon carbide Schottky diode chips with high current properties, their chip area is relatively large compared to other ordinary silicon carbide Schottky diode chips. However, all silicon carbide Schottky diode chips are currently manufactured as a single unit. If a single failure point exists in a large silicon carbide Schottky diode chip, the entire silicon carbide Schottky diode chip will fail and become unusable.

[0040] Based on this, embodiments of this application provide a silicon carbide Schottky diode chip, a circuit board assembly, and an electronic device, which aim to enable the silicon carbide Schottky diode chip to still operate in a matching current environment even when there is a failure point.

[0041] This application provides a silicon carbide Schottky diode chip, a circuit board assembly, and an electronic device, which are specifically described through the following embodiments. First, the silicon carbide Schottky diode chip in the embodiments of this application is described.

[0042] Please see Figure 1 , Figure 1 This is a schematic diagram of a Schottky diode unit provided in an embodiment of this application. In the embodiments of this application, the silicon carbide Schottky diode chip includes multiple Schottky diode units, each of which includes, but is not limited to, a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer, and a termination structure. Each Schottky diode unit forms a typical silicon carbide Schottky diode structure.

[0043] It should be understood that the structure of the Schottky diode unit here is diverse, and those skilled in the art can determine the specific structure of the silicon carbide diode unit based on the diode chip structure in the prior art.

[0044] For each Schottky diode unit, each Schottky diode unit includes a base unit 21, and the plurality of Schottky diode units include, but are not limited to, three parts: a center Schottky diode unit 110, a side Schottky diode unit 120, and a corner Schottky diode unit 130.

[0045] There are multiple central Schottky diode units 110, and each central Schottky diode unit 110 is in contact with the others to form a central matrix 111.

[0046] There are multiple side-side Schottky diode units 120, and each side-side Schottky diode unit 120 is in contact with each other to form multiple side-side matrices 121.

[0047] There are multiple corner Schottky diode units 130, and each corner Schottky diode unit 130 contacts two of all side matrix 121 to form a first enclosing ring, which contacts and encloses the central matrix 111.

[0048] In some possible embodiments of this application, for all center Schottky diode units 110, the base unit 21 of each center Schottky diode unit 110 is equidistant from the base unit 21 of other center Schottky diode units 110.

[0049] In some possible embodiments of this application, the base unit 21 of each central Schottky diode unit 110 is spaced apart from the base units 21 of other central Schottky diode units 110 by a first distance. For each side-side Schottky diode unit 120, the base unit 21 of each side-side Schottky diode unit 120 is equidistant from the base units 21 of other side-side Schottky diode units 120, both being the first distance. The base unit 21 in each side-side Schottky diode unit 120 is spaced apart from the edge of the silicon carbide Schottky diode chip by a second distance, the second distance being greater than the first distance.

[0050] In this embodiment, the spacing between the base unit 21 of the center Schottky diode unit 110 and the base units 21 of all the side Schottky diode units 120 is set to be equal to the spacing between the base units 21 of each center Schottky diode unit 110. This ensures that the overcurrent capacity of the side Schottky diode units 120 and the center Schottky diode units 110 is equal, preventing uneven overcurrent among the Schottky diode units from causing damage to the side Schottky diode units 120.

[0051] In some possible embodiments of this application, for each corner Schottky diode unit 130, the base unit 21 of the corner Schottky diode unit 130 is spaced apart from the base unit 21 of the side-contact Schottky diode unit by a first distance.

[0052] It should be understood that the side contact Schottky diode unit here refers to the side Schottky diode unit 120 that is in contact with the corner Schottky diode unit 130 in the side matrix 121 that is in contact with the corner Schottky diode unit 130.

[0053] In this embodiment, the distance between the base units 21 of each Schottky diode unit is set to be equal, and the distance between the base unit 21 of the corner Schottky diode unit 130 and the edge of the silicon carbide Schottky diode chip is increased. This ensures that each Schottky diode unit is equal and achieves the same overcurrent capability, thereby enabling the silicon carbide Schottky diode chip to continue to work even if the internal current is not completely damaged.

[0054] In some possible embodiments of this application, for each central Schottky diode unit 110 in contact with the side matrix 121, the shortest interval between the base unit 21 of the central Schottky diode unit 110 and the base units 21 of all side Schottky diode units 120 is a first distance.

[0055] This application proposes a silicon carbide Schottky diode chip that forms multiple Schottky diode units, each with an equal overcurrent capacity. Even if one Schottky diode unit has a failure point, the others can still shunt current normally, allowing the silicon carbide Schottky diode chip to continue operating in a matched current environment. This reduces the possibility of complete failure due to the failure point. Furthermore, due to this structure, even if a failure point exists within the silicon carbide Schottky diode chip during production, it can still operate normally in a matched current environment, reducing production waste.

[0056] Please see Figure 2 , Figure 2 for Figure 1 A schematic diagram of the cell structure of a Schottky diode unit. In some possible embodiments of this application, a basic unit 21 includes multiple cells 20, and each cell 20 includes a cell sub-section 22. The specific cell structure of a Schottky diode unit is illustrated below.

[0057] The cathode metal layer 11 is located at the bottom of the silicon carbide Schottky diode chip and is used to bring out the package electrode that contacts the external circuit.

[0058] It should be understood that the materials in the cathode metal layer 11 are diverse, such as elemental metals like titanium, aluminum, and copper, or metal compounds like titanium nitride. Those skilled in the art can select appropriate materials as the cathode metal layer 11 according to the current property requirements of the silicon carbide Schottky diode chip.

[0059] The N-type substrate layer 12 is disposed on the cathode metal layer 11, providing electrical performance for the silicon carbide Schottky diode chip and providing a supporting substrate for other layers of the silicon carbide Schottky diode chip.

[0060] The N-type epitaxial layer 13 is disposed above the N-type substrate layer 12 and is used to adjust the electrical performance of the silicon carbide Schottky diode chip.

[0061] It should be understood that the ion concentration in the N-type epitaxial layer 13 and the thickness of the N-type epitaxial layer 13 itself determine the current and voltage of the device. Those skilled in the art can determine the thickness of the N-type epitaxial layer 13 and the specific doping concentration of the N-type epitaxial layer according to the actual situation. This application does not limit this.

[0062] Multiple anode metal layers 14 are disposed on the upper surface of the N-type epitaxial layer 13. For each anode metal layer 14, the anode metal layer 14 contacts the N-type epitaxial layer 13 to form a Schottky contact. The anode metal layer 14 and the N-type epitaxial layer 13 form a Schottky barrier due to the Schottky contact. That is, the cathode metal layer 11, the N-type substrate layer 12, the N-type epitaxial layer 13, and the anode metal layer 14 form a cell 22. When packaging the silicon carbide diode chip, a packaging electrode that contacts the external circuit is led out from the anode metal layer 14.

[0063] It should be understood that the specific material of the anode metal layer 14 is diverse, and exemplary materials include nickel, platinum, etc. Those skilled in the art can select a suitable material as the anode metal layer 14 according to the actual situation, and this application does not limit it.

[0064] Each cell 22 contains a semiconductor-metal junction. Trapped electrons in the semiconductor diffuse into the metal, creating a depletion region and a built-in electric field within the semiconductor. The cell 22 can be considered a small Schottky diode. During forward conduction, a large number of free electrons are generated in the N-type semiconductor and metal, causing the depletion region to shrink and thus reducing the built-in electric field. Taking a diode structure represented by a single cell 20 as an example, applying a forward voltage to this diode structure reduces the size of the depletion region, making it easier for internal electrons to pass through. When the applied voltage exceeds the forward voltage, the depletion region becomes very narrow, causing the diode structure to conduct and generate current.

[0065] The terminal structure 15 is disposed on the surface of the isolation portion 131 formed opposite to the cell sub-parts 22 on the N-type epitaxial layer 15, and forms a plurality of cells 20 corresponding to the plurality of cell sub-parts 22. Specifically, for a cell sub-part 22, the terminal structure 15 surrounds the cell sub-part 22 to form a cell 20.

[0066] In some possible embodiments of this application, the terminal structure 15 is disposed on the upper surface of the isolation portion 131 to form a plurality of field plate structures, the plurality of field plate structures corresponding one-to-one with a plurality of cell portions 22, each field plate structure surrounding the corresponding cell portion 22 and contacting the anode metal layer 14 in the cell portion 22.

[0067] Because the terminal structure 15 of the side Schottky diode unit 120 is partially occupied by the anode metal layer 14, the terminal structure 15 needs to be expanded outward to achieve the same overcurrent capacity as the central Schottky diode unit 110. Further expanding the terminal structure, from the width of the first distance to the width of the second distance, ensures that the overcurrent of the side Schottky diode unit 120 is balanced with that of the central Schottky diode unit 110, preventing uneven overcurrent between Schottky diode units and thus avoiding damage to the side Schottky diode unit 120.

[0068] The terminal structure 15 of the corner Schottky diode unit 130 is partially occupied by the anode metal layer 14, which expands the size of the terminal structure formed by the terminal structure 15 outward, so that the corner Schottky diode unit 130 maintains the same overcurrent capability as the side Schottky diode unit 120, and prevents uneven overcurrent between Schottky diode units from causing damage to the side Schottky diode unit 120.

[0069] Please see Figure 3 , Figure 3 for Figure 2 A schematic diagram of a cell structure including a junction structure. Taking a field plate structure as an example, since the anode metal layer 14 is disposed on the N-type epitaxial layer 13, it is not only in contact with the bottom of the N-type epitaxial layer 13, but also with the sidewalls of the anode metal layer 14. This Schottky contact forms a three-dimensional enclosed depletion region, such as... Figure 3 As shown by line A in the middle. When power is applied, the depletion region shrinks. For the depletion region in this embodiment, shrinkage manifests as the semiconductor-metal junction contracting inward, at which point the junction surface becomes spherical, as... Figure 3 As shown by line B, for the spherical junction surface, the internal electric field lines are dense, causing the electric field anomaly to increase at this location, leading to breakdown of the cell portion 22 at that position. When the termination structure 15 is provided, under the action of the termination structure 15, the junction electrons of the semiconductor-metal junction are depleted, and the depletion region expands, as shown... Figure 3 As shown in the C-line, reducing the size of the built-in electric field improves the cell subunit's resistance to breakdown.

[0070] In this embodiment, since the silicon carbide Schottky diode chip has Schottky diode units, the identical termination structure 15 and the same semiconductor-metal junction structure ensure that each basic unit 21 has the same overcurrent capability. Therefore, each Schottky diode unit can divide the current passing through the silicon carbide Schottky diode chip into smaller currents. For example, if a Schottky diode unit is formed in the silicon carbide Schottky diode chip, and the current passing through the silicon carbide Schottky diode chip is YA, then the current passing through each Schottky diode unit is XA / Y.

[0071] Furthermore, thanks to the terminal structure and isolation unit, each Schottky diode unit is isolated from the others. When one Schottky diode unit malfunctions and cannot function as a Schottky diode, the overcurrent of the other Schottky diode units remains unaffected. The overcurrent capability of the silicon carbide Schottky diode chip is reduced, but it continues to operate in the corresponding current environment. For example, if the breakdown current of a Schottky diode unit is QA, and X Schottky diode units are formed in the silicon carbide Schottky diode chip, then the overcurrent capability of the silicon carbide Schottky diode chip reaches XQA. When one Schottky diode unit fails, the overcurrent capability of the silicon carbide Schottky diode chip becomes (X-1)QA.

[0072] In some possible embodiments of this application, the field plate structure includes an oxide medium layer and a field plate metal layer (both not shown in the figure), with the field plate metal layer in contact with the anode metal layer 14.

[0073] It should be understood that the field plate metal layer can be formed in various ways. For example, the anode metal layer 14 can extend above the oxide medium layer to form the field plate metal layer. Another example is that a separate field plate metal layer can be provided on the oxide medium layer and make contact with the anode metal layer 14. Those skilled in the art can determine the structure of the field plate metal layer and the oxide medium layer according to the actual situation. This application does not limit this.

[0074] By expanding the depletion region size near the semiconductor-metal junction through the field plate structure, the junction surface of the semiconductor-metal junction is enlarged, thereby improving the breakdown resistance of the basic unit 21.

[0075] Please see Figure 4 , Figure 4 for Figure 2 A schematic diagram of another embodiment of the terminal structure 15. In some possible embodiments of this application, the terminal structure 15 is embedded in the upper surface of the isolation portion 131, such that the upper surface of the isolation portion 131 forms a plurality of floating field rings 151 surrounding the cell sub-parts 22, each floating field ring 151 surrounding the corresponding cell sub-part 22 to form a cell 20. The floating field rings 151 contact the N-type epitaxial layer 13 to form diode junctions, and the junction surfaces of these diode junctions also form depletion regions. For a cell 20, each floating field ring 151 is not equidistantly distributed, and the depletion regions formed by each diode junction are interconnected, causing the depletion regions to expand, thereby expanding the semiconductor-metal junction surface and improving the breakdown resistance of the basic unit 21.

[0076] It should be understood that one cell sub-part 22 can correspond to multiple floating field rings 151, that is, in one cell 20, one cell sub-part 22 is surrounded by multiple corresponding floating field rings 151.

[0077] It should be understood that the specific material of the floating field ring 151 is varied, and the specific spacing between each floating field ring is varied. It can be the same as the material of the anode metal layer 14 or different from the material of the anode metal layer 14. Those skilled in the art can determine the specific material of the floating field ring and the specific spacing between each floating field ring 151 according to the actual situation. This application does not limit this.

[0078] The second aspect of this application provides a circuit board assembly, which includes a silicon carbide Schottky diode chip provided in the first aspect of this application. The silicon carbide Schottky diode chip forms multiple Schottky diode units, each of which has an equal overcurrent capacity. When one Schottky diode unit has a failure point, the other Schottky diode units still shunt current normally, allowing the silicon carbide Schottky diode chip to continue operating in a matching current environment, reducing the possibility of the silicon carbide Schottky diode chip completely failing due to a failure point. Furthermore, due to this structure, even if there is a failure point in the silicon carbide Schottky diode chip during the production process, it can still operate normally in a matching current environment, reducing production waste.

[0079] The third aspect of this application provides an electronic device, which includes a circuit board assembly provided in the second aspect of this application. The circuit board assembly includes a silicon carbide Schottky diode chip provided in the first aspect of this application. The silicon carbide Schottky diode chip forms multiple Schottky diode units, so that each Schottky diode unit has an equal overcurrent capacity. When a Schottky diode unit has a failure point, the other Schottky diode units still shunt current normally, so that the silicon carbide Schottky diode chip can still work in a matching current environment, reducing the possibility of the silicon carbide Schottky diode chip completely failing due to the failure point, and maintaining the stability of the electronic device.

[0080] This application discloses a silicon carbide Schottky diode chip, a circuit board assembly, and an electronic device. The silicon carbide Schottky diode chip comprises multiple Schottky diode units. Each Schottky diode unit includes a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer, and a termination structure. By forming multiple Schottky diode units, each unit achieves an equivalent overcurrent capability. Even if one Schottky diode unit has a failure point, the other units still shunt current normally, allowing the silicon carbide Schottky diode chip to continue operating in a matching current environment. This reduces the possibility of complete failure due to a failure point. Furthermore, due to this structure, even if a failure point exists within the silicon carbide Schottky diode chip during production, it can still operate normally in a matching current environment, reducing production waste.

[0081] The embodiments described in this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems.

[0082] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0083] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0084] The embodiments described in this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems.

[0085] Those skilled in the art will understand that the technical solutions shown in the figures do not constitute a limitation on the embodiments of this application, and may include more or fewer steps than shown, or combine certain steps, or different steps.

Claims

1. A silicon carbide Schottky diode chip, characterized in that, The silicon carbide Schottky diode chip includes multiple Schottky diode units; For each of the Schottky diode units, the Schottky diode unit includes: a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer, and a termination structure, wherein the N-type epitaxial layer includes an isolation portion, and the termination structure is disposed on the surface of the isolation portion.

2. The silicon carbide Schottky diode chip according to claim 1, characterized in that, For each of the Schottky diode units, the Schottky diode unit includes a base unit; the plurality of Schottky diode units include: a plurality of central Schottky diode units, each of the central Schottky diode units being in contact with each other to form a central matrix; Multiple side-side Schottky diode units are in contact with each other to form multiple side-side matrices; Multiple corner Schottky diode units, each of the corner Schottky diode units contacting two of all the side matrices to form a first enclosing circle that contacts and encloses the central matrix.

3. The silicon carbide Schottky diode chip according to claim 1, characterized in that, For each of the Schottky diode units, the termination structure forms multiple floating field rings on the N-type epitaxial layer.

4. The silicon carbide Schottky diode chip according to claim 1, characterized in that, For each of the Schottky diode units, the termination structure forms multiple field plate structures on the N-type epitaxial layer.

5. The silicon carbide Schottky diode chip according to claim 2, characterized in that, The base units of all the central Schottky diode units are equidistant from each other.

6. The silicon carbide Schottky diode chip according to claim 5, characterized in that, The base units of all the central Schottky diode units are spaced apart by a first distance, and the base units of all the side Schottky diode units are spaced apart by the first distance; The base unit of each of the side-side Schottky diode units is spaced from the edge of the silicon carbide Schottky diode chip by a second distance, the second distance being greater than the first distance.

7. The silicon carbide Schottky diode chip according to claim 6, characterized in that, For each corner Schottky diode unit, the base unit of the corner Schottky diode unit is spaced apart from the base unit of the side-contact Schottky diode unit by a first distance, and spaced apart from the edge of the silicon carbide Schottky diode chip by a second distance, wherein the side-contact Schottky diode unit is the side-contact Schottky diode unit that contacts the corner Schottky diode unit in the side matrix that contacts the corner Schottky diode unit.

8. The silicon carbide Schottky diode chip according to claim 7, characterized in that, For each of the central Schottky diode units that is in contact with the side matrix, the shortest interval between the base unit of the central Schottky diode unit and the base units of all the side Schottky diode units is the first distance.

9. A circuit board assembly, characterized in that, The circuit board assembly includes a silicon carbide Schottky diode chip as described in any one of claims 1 to 8.

10. An electronic device, characterized in that, The electronic device includes the circuit board assembly as described in claim 9.

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