A micro-factory device for semiconductors

Abstract

This invention relates to a micro-factory equipment for semiconductors, comprising: an atmospheric pressure processing device; an atmospheric pressure equipment housing, wherein the atmospheric pressure processing device is disposed within the atmospheric pressure equipment housing; the atmospheric pressure equipment housing includes an inner protective layer mechanism and an outer protective layer mechanism, both of which are heat-insulating protective layer structures with metal layers, and an airflow buffer layer is formed between them; a temperature compensation unit connected to the processing area where the atmospheric pressure processing device is located, used to compensate for temperature fluctuations caused by changes in equipment power within the processing area; and a dust filtration unit disposed within the atmospheric pressure equipment housing. Through the above configuration, the problem of huge investment in the construction of cleanroom and constant-temperature workshops in current semiconductor factories can be solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a micro-factory device for semiconductors. Background Technology

[0002] In the precision processing and inspection of semiconductors, thermal expansion and contraction caused by temperature changes often lead to larger processing errors, making it impossible to complete precision processing or resulting in insufficient overall accuracy. At the same time, dust problems often affect the processing quality of semiconductor products such as chips and sensors.

[0003] Therefore, semiconductor factories often invest heavily in factory construction to create a dust-free, temperature-controlled processing, manufacturing, and inspection environment. Summary of the Invention

[0004] To address the aforementioned technical problems, the present invention aims to provide a micro-factory device for semiconductors, thereby solving the problem of huge investment in the construction of cleanroom and temperature-controlled workshops in current semiconductor factories.

[0005] To achieve one of the above-mentioned objectives, one embodiment of the present invention provides a semiconductor micro-factory device, comprising:

[0006] Atmospheric pressure processing equipment;

[0007] An atmospheric pressure equipment enclosure, wherein the atmospheric pressure processing equipment is disposed in the atmospheric pressure equipment enclosure; the atmospheric pressure equipment enclosure includes an inner protective layer mechanism and an outer protective layer mechanism, both of which are heat-insulating protective layer structures with metal layers, and an airflow buffer layer is formed between them;

[0008] A temperature compensation unit is connected to the processing area where the atmospheric pressure processing equipment is located, and is used to compensate for temperature fluctuations caused by changes in the power of the equipment within the processing area;

[0009] The dust filtration unit is located inside the enclosure of the atmospheric pressure equipment.

[0010] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes a high-precision integrated temperature sensor, which is connected to the temperature compensation unit for controlling and providing temperature feedback.

[0011] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes an ambient pressure equipment current sensor for monitoring the equipment power changes of the ambient pressure processing equipment; the output terminal of the ambient pressure equipment current sensor is connected to the temperature compensation unit for feeding back equipment power change information.

[0012] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes a temperature mixing unit for uniformly mixing the airflow near the temperature compensation unit with the overall airflow of the atmospheric pressure equipment housing, so that the temperature field distribution is uniform and stable.

[0013] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes a gas filtration unit located in the airflow buffer layer and disposed on the inner protective layer mechanism, for treating organic gases and other exhaust gases generated during the production process of the atmospheric pressure processing equipment.

[0014] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes a wafer transfer unit, a first valve, and a first robotic arm; the wafer transfer unit is located on the first outer side of the atmospheric pressure equipment housing, the first valve passes through both the inner protective layer mechanism and the outer protective layer mechanism, and the first robotic arm is located in the atmospheric pressure equipment housing; the wafer transfer unit, the processing area of ​​the atmospheric pressure processing equipment, and the first valve are connected in sequence, and are used to transfer raw material wafers in or finished chips out by means of the first robotic arm.

[0015] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes a vacuum processing device, a vacuum device interface, a second valve, and a second robotic arm; the vacuum processing device is located on the second outer side of the atmospheric pressure equipment housing, the second valve passes through both the inner protective layer mechanism and the outer protective layer mechanism, and the second robotic arm is located in the vacuum processing device; the processing area of ​​the atmospheric pressure processing device, the second valve, the vacuum device interface, and the vacuum processing device are connected in sequence for transferring the processed wafer.

[0016] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes a vacuum processing enclosure for covering the interface between the vacuum processing equipment and the vacuum equipment.

[0017] As a further improvement of one embodiment of the present invention, the heat insulation protective layer structure is at least one of a stainless steel heat insulation material sandwich insulation structure and a stainless steel external heat insulation layer insulation structure.

[0018] As a further improvement of one embodiment of the present invention, the semiconductor micro-factory equipment further includes a gas processing unit disposed between the temperature compensation unit and the processing area of ​​the atmospheric pressure processing equipment, for pre-processing the gas.

[0019] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0020] In semiconductor micro-factory equipment, the wall panels are designed as a heat-insulating protective layer structure with a metal layer to form an inner protective layer mechanism, which not only ensures the strength of the micro-factory, but also provides heat insulation to reduce the impact of external temperature changes on the interior of the micro-factory.

[0021] In addition, an outer protective layer mechanism with the same structure is set outside the inner protective layer mechanism to further enhance the protection against temperature changes caused by external temperature.

[0022] An airflow buffer layer is formed between the two layers, which can prevent external gas from directly conducting heat with the gas in the micro-factory through the inner protective layer structure;

[0023] Meanwhile, the temperature compensation unit is used to compensate for temperature fluctuations caused by changes in the power of the equipment in the processing area; it cools appropriately when the power is high and heats up appropriately when the power is low to maintain a constant temperature.

[0024] The dust filtration unit is used to meet the cleanliness level of the entire micro-factory and to promote a more uniform temperature field.

[0025] This allows for a dust-free, temperature-controlled environment in semiconductor manufacturing to be achieved in a more economical way. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0027] Figure 1 This is a schematic diagram of the structure of a semiconductor micro-factory device according to an embodiment of the present invention.

[0028] The reference numerals used in the attached figures are as follows:

[0029] The equipment includes an atmospheric pressure chamber 10, an inner protective layer mechanism 11, an outer protective layer mechanism 12, a temperature compensation unit 13, a gas processing unit 14, a gas filtration unit 15, a wafer transfer unit 20, a first valve 21, a vacuum processing chamber 30, a second valve 32, a vacuum equipment interface 33, and a vacuum processing equipment 34. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0031] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0032] like Figure 1 As shown, one embodiment of the present invention provides a micro-factory device for semiconductors, comprising:

[0033] Atmospheric pressure processing equipment;

[0034] The atmospheric pressure equipment enclosure 10 contains atmospheric pressure processing equipment. The atmospheric pressure equipment enclosure 10 includes an inner protective layer mechanism 11 and an outer protective layer mechanism 12. Both the inner protective layer mechanism 11 and the outer protective layer mechanism 12 are heat insulation protective layer structures with metal layers, and an airflow buffer layer is formed between them.

[0035] Temperature compensation unit 13 is connected to the processing area where the atmospheric pressure processing equipment is located, and is used to compensate for temperature fluctuations caused by changes in the power of the equipment in the processing area.

[0036] The dust filtration unit is located in the enclosure 10 of the atmospheric pressure equipment.

[0037] Specifically, in semiconductor micro-factory equipment, the wall panels are designed as a heat-insulating protective layer structure with a metal layer, forming an inner protective layer mechanism 11, which not only ensures the strength of the micro-factory but also provides heat insulation, thereby reducing the impact of external temperature changes on the interior of the micro-factory.

[0038] In addition, an outer protective layer mechanism 12 with the same structure is provided outside the inner protective layer mechanism 11 to further enhance the protection against temperature changes caused by external temperature.

[0039] An airflow buffer layer is formed between the two layers, which can prevent external gas from directly conducting heat with the gas in the micro-factory through the inner protective layer mechanism 11;

[0040] Meanwhile, the temperature compensation unit 13 is used to compensate for temperature fluctuations caused by changes in the power of the equipment in the processing area; when the power is high, it is appropriately cooled; when the power is low, the heat release power is small, so as to maintain a constant temperature.

[0041] The dust filtration unit is used to meet the cleanliness level of the entire micro-factory and to promote a more uniform temperature field.

[0042] This allows for a dust-free, temperature-controlled environment in semiconductor manufacturing to be achieved in a more economical way.

[0043] In practical applications, atmospheric pressure processing equipment can be devices such as lithography machines, cleaning machines, coating and developing machines, or inspection machines.

[0044] Furthermore, the semiconductor micro-factory equipment also includes a high-precision integrated temperature sensor, which is connected to the temperature compensation unit 13 for controlling and providing temperature feedback.

[0045] In practical use, the aforementioned semiconductor micro-factory equipment is also equipped with multiple high-precision integrated temperature sensors for temperature control and feedback.

[0046] Furthermore, the semiconductor micro-factory equipment also includes an ambient pressure equipment current sensor for monitoring changes in the power of the ambient pressure processing equipment; the output of the ambient pressure equipment current sensor is connected to the temperature compensation unit 13 for feedback of equipment power change information.

[0047] In practical use, the aforementioned semiconductor micro-factory equipment is further equipped with a current sensor for the processing area (or other related sensors for monitoring power) to monitor changes in equipment power and provide feedback to the temperature compensation unit 13 for fine control.

[0048] Furthermore, the semiconductor micro-factory equipment also includes a temperature mixing unit for uniformly mixing the airflow near the temperature compensation unit 13 with the overall airflow of the atmospheric pressure equipment housing 10, so that the temperature field distribution is uniform and stable.

[0049] In practical use, the above-mentioned semiconductor micro-factory equipment is equipped with a temperature mixing unit to uniformly mix the gas output from the temperature compensation unit 13 with the airflow inside the chamber, so that the temperature field is uniformly distributed and continuously stable.

[0050] Furthermore, the semiconductor micro-factory equipment also includes a gas processing unit 14, located between the temperature compensation unit 13 and the processing area of ​​the atmospheric pressure processing equipment, for pre-processing gases.

[0051] Furthermore, the semiconductor micro-factory equipment also includes a gas filtration unit 15, located in the airflow buffer layer and disposed on the inner protective layer mechanism 11, for treating organic gases and other exhaust gases generated during the production process of the atmospheric pressure processing equipment.

[0052] In practical use, the aforementioned semiconductor micro-factory equipment is also equipped with a gas filtration unit 15, which is used to treat organic gases and other exhaust gases generated during the production process.

[0053] Furthermore, the semiconductor micro-factory equipment also includes a wafer transfer unit 20, a first valve 21, and a first robotic arm; the wafer transfer unit 20 is located on the first outer side of the atmospheric pressure equipment housing 10, the first valve 21 passes through both the inner protective layer mechanism 11 and the outer protective layer mechanism 12, and the first robotic arm is located in the atmospheric pressure equipment housing 10; the wafer transfer unit 20, the processing area of ​​the atmospheric pressure processing equipment, and the first valve 21 are connected in sequence, and are used to transfer raw material wafers in or finished chips out through the first robotic arm.

[0054] In practical use, the aforementioned semiconductor micro-factory equipment is also equipped with multiple wafer transfer-in and transfer-out units, which can switch between normal pressure and vacuum, and are used to transfer raw material wafers or finished chips in and out by robotic arms within the micro-factory.

[0055] Furthermore, the semiconductor micro-factory equipment also includes a vacuum processing device 34, a vacuum device interface 33, a second valve 32, and a second robotic arm; the vacuum processing device 34 is located on the second outer side of the atmospheric pressure equipment housing 10, the second valve 32 passes through both the inner protective layer mechanism 11 and the outer protective layer mechanism 12, and the second robotic arm is located in the vacuum processing device 34; the processing area of ​​the atmospheric pressure processing device, the second valve 32, the vacuum device interface 33, and the vacuum processing device 34 are connected in sequence for transferring the processed wafer.

[0056] In practical use, the aforementioned semiconductor micro-factory equipment is also equipped with a vacuum equipment interface 33, which is used to connect to vacuum process equipment in the wafer processing process, and the wafers can be transferred between the robotic arms in the micro-factory and the vacuum robotic arms in the vacuum equipment.

[0057] In practical use, vacuum processing equipment 34 can be machines such as CVD.

[0058] Furthermore, the semiconductor micro-factory equipment also includes a vacuum processing enclosure 30 for housing the vacuum processing equipment 34 and the vacuum equipment interface 33.

[0059] Meanwhile, a micro-space enclosure for the operation and maintenance of vacuum process equipment is also installed around the vacuum processing equipment 34.

[0060] Furthermore, the thermal insulation layer structure is at least one of stainless steel thermal insulation material sandwich insulation structure and stainless steel external thermal insulation layer insulation structure.

[0061] In practical use, the metal layer is a stainless steel layer;

[0062] The structures of the inner protective layer mechanism 11 and the outer protective layer mechanism 12 are not limited and can be selected according to the actual situation.

[0063] It should be noted that in actual use, the aforementioned semiconductor micro-factory equipment is also equipped with auxiliary water, electricity, gas, and special gas exhaust interfaces.

[0064] In summary, the present invention provides a micro-factory device for semiconductors, which has the following advantages:

[0065] 1. More economical and environmentally friendly investment scale;

[0066] 2. Microenvironment control results in smaller size and easier temperature control, ensuring processing accuracy and leading to better product processing precision and quality;

[0067] 3. The microenvironment control system has a smaller volume and a more uniform temperature distribution within the chamber;

[0068] 4. The chamber temperature is continuously constant, with high precision and good stability.

[0069] 5. Microenvironment control results in smaller volume, easier control of cleanliness, more controllable process, higher yield, and better quality assurance;

[0070] 6. The microenvironment control system is smaller in size and can achieve waterless and oxygen-free operation, which can be used for the research and development and application of new air-sensitive semiconductors in the future;

[0071] 7. Unmanned factories have a more controllable environment.

[0072] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0073] The detailed descriptions listed above are merely specific descriptions of feasible implementations of the present invention and are not intended to limit the scope of protection of the present invention. All equivalent implementations or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.

Claims

1. A micro-fab facility for semiconductor, characterized by, include: Atmospheric pressure processing equipment; An atmospheric pressure equipment enclosure, wherein the atmospheric pressure processing equipment is disposed in the atmospheric pressure equipment enclosure; the atmospheric pressure equipment enclosure includes an inner protective layer mechanism and an outer protective layer mechanism, both of which are heat-insulating protective layer structures with metal layers, and an airflow buffer layer is formed between them; A temperature compensation unit is connected to the processing area where the atmospheric pressure processing equipment is located, and is used to compensate for temperature fluctuations caused by changes in the power of the equipment within the processing area; A dust filtration unit is located within the enclosure of the atmospheric pressure equipment; wherein... The semiconductor micro-factory equipment also includes a high-precision integrated temperature sensor, which is connected to the temperature compensation unit for controlling and providing temperature feedback. The semiconductor micro-factory equipment also includes an ambient pressure equipment current sensor for monitoring power changes in the ambient pressure processing equipment; the output of the ambient pressure equipment current sensor is connected to the temperature compensation unit for feedback of equipment power change information; and The semiconductor micro-factory equipment also includes a temperature mixing unit, which is used to uniformly mix the airflow near the temperature compensation unit with the overall airflow of the atmospheric pressure equipment enclosure, so that the temperature field distribution is uniform and stable.

2. The micro-fab facility for semiconductors according to claim 1, wherein, The semiconductor micro-factory equipment also includes a gas filtration unit located in the airflow buffer layer and disposed on the inner protective layer mechanism, for treating organic gases and other exhaust gases generated during the production process of the atmospheric pressure processing equipment.

3. The semiconductor micro-factory equipment according to claim 1, characterized in that, The semiconductor micro-factory equipment also includes a wafer transfer unit, a first valve, and a first robotic arm; the wafer transfer unit is located on the first outer side of the atmospheric pressure equipment housing, the first valve passes through both the inner protective layer mechanism and the outer protective layer mechanism, and the first robotic arm is located inside the atmospheric pressure equipment housing; the wafer transfer unit, the processing area of ​​the atmospheric pressure processing equipment, and the first valve are connected in sequence, and are used to transfer raw material wafers in or finished chips out through the first robotic arm.

4. The semiconductor micro-factory equipment according to claim 1, characterized in that, The semiconductor micro-factory equipment also includes a vacuum processing device, a vacuum device interface, a second valve, and a second robotic arm; the vacuum processing device is located on the second outer side of the atmospheric pressure equipment housing, the second valve passes through both the inner protective layer mechanism and the outer protective layer mechanism, and the second robotic arm is located in the vacuum processing device; the processing area of ​​the atmospheric pressure processing device, the second valve, the vacuum device interface, and the vacuum processing device are connected in sequence for transferring the processed wafer.

5. The semiconductor micro-factory equipment according to claim 4, characterized in that, The semiconductor micro-factory equipment also includes a vacuum processing enclosure for housing the interface between the vacuum processing equipment and the vacuum equipment.

6. The semiconductor micro-factory equipment according to claim 1, characterized in that, The thermal insulation protective layer structure is at least one of stainless steel thermal insulation material sandwich insulation structure and stainless steel external thermal insulation layer insulation structure.

7. The semiconductor micro-factory equipment according to claim 1, characterized in that, The semiconductor micro-factory equipment also includes a gas processing unit located between the temperature compensation unit and the processing area of ​​the atmospheric pressure processing equipment, for pre-processing gases.

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