Micro-electro-mechanical device with multiple vibrating parts

Abstract

This invention discloses a microelectromechanical device (MEMS) with multiple vibrating parts, comprising a base and a thin film. The thin film includes a fixed portion, a peripheral portion, a central portion, a first elastic portion, and a second elastic portion. The fixed portion is disposed on the base. The peripheral portion surrounds the central portion. The first elastic portion includes a first electrode, and the second elastic portion includes a second electrode. The first elastic portion connects the fixed portion and the peripheral portion. The second elastic portion connects the peripheral portion and the central portion. When a low-frequency electrical drive signal is input to the first electrode, the peripheral portion and the central portion respectively generate a first low-frequency amplitude and a second low-frequency amplitude along an axis parallel to the normal vector of the base. When a high-frequency electrical drive signal is input to the second electrode, the peripheral portion and the central portion respectively generate a first high-frequency amplitude and a second high-frequency amplitude along an axial direction. The difference between the first low-frequency amplitude and the second low-frequency amplitude is smaller than the difference between the first high-frequency amplitude and the second high-frequency amplitude.

Description

Technical Field

[0001] This invention relates to a microelectromechanical device having multiple vibrating parts. Background Technology

[0002] In the past, traditional miniature loudspeakers typically used a voice coil motor to vibrate the air and thus emit sound waves, such as headphones.

[0003] However, a single voice coil motor typically only generates sufficient sound pressure levels within a specific frequency range. Therefore, a single voice coil motor cannot easily meet the demands of both high-frequency and low-frequency audio simultaneously. Furthermore, voice coil motors usually require the assembly of multiple components, making their manufacturing process complex. Additionally, voice coil motors are difficult to miniaturize, thus limiting their application in miniaturized electronic devices such as Bluetooth wireless headphones. Moreover, voice coil motors undergo multiple energy conversions during operation, which can easily lead to excessive power consumption. Summary of the Invention

[0004] The purpose of this invention is to provide a microelectromechanical device with multiple vibration parts, which can meet the response requirements of both high and low frequencies, react quickly and reduce energy consumption.

[0005] An embodiment of the present invention provides a microelectromechanical device (MEMS) with multiple vibrating parts, comprising a base and a thin film. The thin film includes a fixed portion, a peripheral portion, a central portion, at least one first elastic portion, and at least one second elastic portion. The fixed portion is disposed on the base. The peripheral portion surrounds the central portion. The first elastic portion includes a first electrode. The second elastic portion includes a second electrode. The first elastic portion connects the fixed portion and the peripheral portion. The second elastic portion connects the peripheral portion and the central portion. When a low-frequency electrical drive signal is input to the first electrode, the peripheral portion generates a first low-frequency amplitude along an axial direction, and the central portion generates a second low-frequency amplitude along an axial direction. The axial direction is parallel to a normal vector of the base. When a high-frequency electrical drive signal is input to the second electrode, the peripheral portion generates a first high-frequency amplitude along an axial direction, and the central portion generates a second high-frequency amplitude along an axial direction. The difference between the first low-frequency amplitude and the second low-frequency amplitude is smaller than the difference between the first high-frequency amplitude and the second high-frequency amplitude.

[0006] According to an embodiment of the present invention, a microelectromechanical device (MEMS) with multiple vibrating sections achieves low-frequency vibration in both the peripheral and central sections by making the difference between the first and second low-frequency amplitudes smaller than the difference between the first and second high-frequency amplitudes, while simultaneously causing the central section to vibrate at high frequencies. This allows for a balance between high-frequency and low-frequency response requirements. Furthermore, the first and second electrodes can directly apply electrical energy to the first and second elastic sections, respectively, to induce vibration in both the peripheral and central sections. This reduces power consumption when the MEMS generates audio frequencies over a wide frequency range.

[0007] The above description of the content of this invention and the following description of the embodiments are used to demonstrate and explain the spirit and principle of this invention, and to provide a further explanation of the claims of this invention. Attached Figure Description

[0008] Figure 1 This is a simplified top view of a microelectromechanical device with multiple vibration sections according to an embodiment of the present invention;

[0009] Figure 2 for Figure 1 A top view schematic diagram of a microelectromechanical device;

[0010] Figure 3 For along Figure 2 A schematic side view of the section along line III-III;

[0011] Figure 4 For along Figure 3 A top view of the cross section along line IV-IV;

[0012] Figure 5 For along Figure 3 A top view of the V-V profile;

[0013] Figure 6 for Figure 2 A partial top view of the microelectromechanical device;

[0014] Figure 7 for Figure 3 A side cross-sectional view of the manufacturing process of microelectromechanical devices;

[0015] Figure 8 for Figure 3 A side cross-sectional view of the manufacturing process of microelectromechanical devices;

[0016] Figure 9 for Figure 3 A side cross-sectional view of the manufacturing process of microelectromechanical devices;

[0017] Figure 10 for Figure 3 A side cross-sectional view of the manufacturing process of microelectromechanical devices;

[0018] Figure 11 for Figure 3 A side view sectional diagram of a microelectromechanical device (MEMS) in operation;

[0019] Figure 12 for Figure 3 A side view sectional diagram of a microelectromechanical device (MEMS) in operation;

[0020] Figure 13This is a perspective view of a microelectromechanical device assembly with multiple vibration sections according to another embodiment of the present invention;

[0021] Figure 14 This is a top view schematic diagram of a microelectromechanical device with multiple vibration sections according to another embodiment of the present invention;

[0022] Figure 15 For along Figure 14 A side view of the XV-XV line section;

[0023] Figure 16 for Figure 13 A side view sectional diagram of a microelectromechanical device (MEMS) in operation;

[0024] Figure 17 for Figure 13 A side view sectional diagram of a microelectromechanical device (MEMS) in operation;

[0025] Figure 18 This is a top view schematic diagram of a microelectromechanical device with multiple vibration sections according to another embodiment of the present invention.

[0026] Symbol Explanation

[0027] 1,1′,1″,1″′,4,8: Microelectromechanical devices

[0028] 1a: Microelectromechanical device assembly

[0029] 101,101′,801,801′: First gap

[0030] 102,102′,801: Second gap

[0031] 11,41,81: Fixing part

[0032] 12,42,82: Peripheral area

[0033] 12a: Outer edge

[0034] 12b: Inner edge

[0035] 13,43,83: Central Department

[0036] 14,14′,44,84: First elastic part

[0037] 14a, 14a′: First outer link

[0038] 14b, 14b′: First inner connecting part

[0039] 141,441,841: First electrode

[0040] 142,442,842: First conductive line

[0041] 15, 15′, 45, 85: Second elastic part

[0042] 15a, 15a′: Second outer connecting part

[0043] 15b, 15b′: Second inner connecting part

[0044] 151,451,851: Second electrode

[0045] 152,452,852: Second conductive wire

[0046] 2: Base

[0047] 20: Back cavity

[0048] 21: Substrate layer

[0049] 21a: Bottom surface

[0050] 22: Insulation layer

[0051] 3,5:Thin film

[0052] 31, 51: Substrate layer

[0053] 32,52: Insulation layer

[0054] 33: Common electrode layer

[0055] 331: First Insulated Wire

[0056] 332: Second Insulated Wire

[0057] 34,94: Piezoelectric material layer

[0058] 341: First piezoelectric material layer

[0059] 342: Second piezoelectric material layer

[0060] 6:Substrate

[0061] 71: First fixed electrode

[0062] 72: Second fixed electrode

[0063] C: Center

[0064] D1, D2, D3, D4: Distance

[0065] H1, H5: First low-frequency amplitude

[0066] H2, H6: Second low-frequency amplitude

[0067] H3, H7: First high-frequency amplitude

[0068] H4, H8: Second high-frequency amplitude

[0069] Z: Axial direction Detailed Implementation

[0070] The following detailed description of the embodiments of the present invention outlines its features and advantages. This description is sufficient to enable anyone skilled in the art to understand the technical content of the embodiments of the present invention and to implement them accordingly. Furthermore, based on the disclosure, claims, and drawings in this specification, anyone skilled in the art can easily understand the related objectives and advantages of the present invention. The following embodiments are intended to further illustrate the viewpoints of the present invention, but are not intended to limit the scope of the invention in any way.

[0071] In the so-called schematic diagrams of this specification, dimensions, proportions, and angles may be exaggerated for illustrative purposes, but are not intended to limit the invention. Various modifications are possible without departing from the spirit of the invention. The up, down, front, and back orientations mentioned in the description of the embodiments and drawings are for illustrative purposes and are not intended to limit the invention.

[0072] Please refer to Figure 1 , Figure 2 and Figure 3 . Figure 1 A simplified top view schematic diagram of a microelectromechanical device having multiple vibrating parts according to an embodiment of the present invention is shown. Figure 2 Draw Figure 1 A top-view schematic diagram of a microelectromechanical device. Figure 3 Drawing along Figure 2 A schematic side view of section III-III.

[0073] like Figure 1 , Figure 2 and Figure 3 As shown, the microelectromechanical device 1 with multiple vibrating parts includes a base 2, a thin film 3, a first conductive line 142, and a second conductive line 152. The base 2 includes a substrate layer 21 and an insulating layer 22 disposed on the substrate layer 21. The thin film 3 is disposed on the insulating layer 22. The base 2 has a back cavity 20. Specifically, the base 2 has holes penetrating the substrate layer 21 and the insulating layer 22. After the base 2 and the thin film 3 are combined, a back cavity 20 is formed at the holes. The thin film 3 includes a stacked substrate layer 31, an insulating layer 32, a common electrode layer 33, and a piezoelectric material layer 34. The thin film 3 includes a fixing portion 11, a peripheral portion 12, a central portion 13, multiple first elastic portions 14, and multiple second elastic portions 15, such as... Figure 2 and Figure 3 As shown. The number of first elastic parts 14 and the number of second elastic parts 15 are not limited to four, and may also be other numbers. The number of first elastic parts 14 and the number of second elastic parts 15 may be the same or different.

[0074] A fixing part 11 is disposed on the base 2. The fixing part 11 surrounds the peripheral part 12. A first gap 101, a first elastic part 14, and another first gap 101' are provided between the fixing part 11 and the peripheral part 12. Each first elastic part 14 is separated from the fixing part 11 by the first gap 101. Each first elastic part 14 is separated from the peripheral part 12 by another first gap 101'. Each first elastic part 14 is located between the first gap 101 and the other first gap 101' and connects the fixing part 11 and the peripheral part 12. The peripheral part 12 surrounds the central part 13. A second gap 102, a second elastic part 15, and another second gap 102' are provided between the peripheral part 12 and the central part 13. Each second elastic part 15 is separated from the peripheral part 12 by the second gap 102. Each second elastic part 15 is separated from the central part 13 by another second gap 102'. Each second elastic portion 15 is located between the second gap 102 and another second gap 102' and connects the peripheral portion 12 and the central portion 13. In this embodiment, the rigidity of each second elastic portion 15 along the axial direction Z is greater than the rigidity of each first elastic portion 14 along the axial direction Z. In other words, the rigidity (K2) of the second elastic portion 15 along the axial direction Z is greater than the rigidity (K1) of the first elastic portion 14 along the axial direction Z, wherein the axial direction Z is parallel to the normal vector of the base 2. In this embodiment, a rigidity ratio (K2 / K1) of the second elastic portion 15 along the axial direction Z relative to the rigidity (K1) of the first elastic portion 14 along the axial direction Z can be greater than a preset rigidity ratio. In this embodiment, the preset rigidity ratio can be 4.6. In other embodiments, the preset rigidity ratio can be greater than or equal to 3.0. On the other hand, the rigidity of each first elastic portion 14 along the axial direction Z is less than the rigidity of each second elastic portion 15 along the axial direction Z. Specifically, the main segment of each first elastic portion 14 is an arc shape surrounding the peripheral portion 12. One end of each first elastic portion 14 is bent toward and connected to the fixing portion 11. The other end of each first elastic portion 14 is bent toward and connected to the peripheral portion 12. The main segment of each second elastic portion 15 is an arc shape surrounding the central portion 13. One end of each second elastic portion 15 is bent toward and connected to the peripheral portion 12, and the other end is bent toward and connected to the central portion 13. However, this is not a limitation. Other shapes may be used in other embodiments.

[0075] In this embodiment, the length of each first elastic part 14 is greater than the length of each second elastic part 15, so that the rigidity of each first elastic part 14 along the axial direction Z is less than the rigidity of each second elastic part 15 along the axial direction Z. In one embodiment, rigidity is defined as the rigidity of each elastic element. The equivalent rigidity of the plurality of first elastic parts 14 and the equivalent rigidity of the plurality of second elastic parts 15 can be calculated by calculating the equivalent rigidity of the plurality of elastic elements connected in parallel. That is, the equivalent rigidity is defined as the equivalent rigidity when the plurality of elastic elements are connected in parallel. Since the number of first elastic parts 14 is the same as the number of second elastic parts 15, the equivalent rigidity of the plurality of first elastic parts 14 is also less than the equivalent rigidity of the plurality of second elastic parts 15. However, this is not a limitation. In other embodiments, the thickness of each first elastic part 14 can also be less than the thickness of each second elastic part 15, so that the rigidity of each first elastic part 14 along the axial direction Z is less than the rigidity of each second elastic part 15 along the axial direction Z. In other embodiments, the width of each first elastic portion 14 can be smaller than the width of each second elastic portion 15, so that the rigidity of each first elastic portion 14 along the Z-axis is less than the rigidity of each second elastic portion 15 along the Z-axis. In other embodiments, the number of first elastic portions 14 can be less than the number of second elastic portions 15, so that the equivalent rigidity of the plurality of first elastic portions 14 along the Z-axis is less than the equivalent rigidity of the plurality of second elastic portions 15 along the Z-axis. The plurality of first elastic portions 14 are arranged in a ring around the peripheral portion 12. The first elastic portions 14 can be slightly torsional deformed, so that the peripheral portion 12 can descend or rise along the Z-axis, thereby generating elastic vibration. The plurality of second elastic portions 15 are arranged in a ring around the central portion 13. The second elastic portions 15 can be slightly torsional deformed, so that the central portion 13 can descend or rise along the Z-axis.

[0076] Since the rigidity or equivalent rigidity of the multiple first elastic parts 14 along the axial direction Z is less than the rigidity or equivalent rigidity of the multiple second elastic parts 15 along the axial direction Z, when a low-frequency electrical drive signal is input to the first electrode 141, the peripheral part 12 can generate a first low-frequency amplitude H1 along the axial direction Z (e.g., Figure 11 (As shown) and the central part 13 also generates a second low-frequency amplitude H2 along the axial direction Z (as shown) Figure 11 (As shown). At this time, the difference between the first low-frequency amplitude H1 and the second low-frequency amplitude H2 is less than a preset low-frequency amplitude value. Furthermore, when the rigidity or equivalent rigidity of the plurality of first elastic parts 14 along the Z-axis is less than the rigidity or equivalent rigidity of the plurality of second elastic parts 15 along the Z-axis, and a low-frequency electrical drive signal is input to the first electrode 141, the value of the first low-frequency amplitude H1 will be close to the value of the second low-frequency amplitude H2. At this time, both the peripheral part 12 and the central part 13 can be considered to be performing low-frequency vibration.

[0077] like Figure 2As shown, the thin film 3 includes a fixing portion 11, a peripheral portion 12, a central portion 13, a first elastic portion 14, and a second elastic portion 15. The fixing portion 11, peripheral portion 12, central portion 13, first elastic portion 14, and second elastic portion 15 of the thin film 3 all include a stacked substrate layer 31, an insulating layer 32, a common electrode layer 33, and a piezoelectric material layer 34. Figure 3 As shown, the piezoelectric material layer 34 located in each of the first elastic portions 14 can also be referred to as the first piezoelectric material layer 341, and each of the first elastic portions 14 further includes a first electrode 141 disposed on the first piezoelectric material layer 341. The piezoelectric material layer 34 located in each of the second elastic portions 15 can also be referred to as the second piezoelectric material layer 342, and each of the second elastic portions 15 further includes a second electrode 151 disposed on the second piezoelectric material layer 342. A first conductive wire 142 is disposed on the piezoelectric material layer 34 of the fixing portion 11. The width of the first conductive wire 142 is smaller than the width of the first electrode 141. Figure 2 and Figure 3 As shown, Figure 3 The left side of the cross-section shows the second conductive wire 152 disposed on the first piezoelectric material layer 341 of one of the first elastic portions 14 and on the piezoelectric material layer 34 of the outer periphery 12. Figure 3 The right side of the cross-section shows the second conductive wire 152 disposed on the piezoelectric material layer 34 of the peripheral portion 12. The width of the second conductive wire 152 is smaller than the width of the second electrode 151. Since the width of the first conductive wire 142 is narrower than the width of the first electrode 141, when current flows through the first conductive wire 142, it will not cause a large deformation of the piezoelectric material layer 34 of the fixing portion 11, thereby preventing unexpected deformation of the fixing portion 11 through which the first conductive wire 142 passes. Similarly, since the width of the second conductive wire 152 is narrower than the width of the second electrode 151, when current flows through the second conductive wire 152, it will not cause a large deformation of the first piezoelectric material layer 341 of the first elastic portion 14 and the piezoelectric material layer 34 of the peripheral portion 12, thereby preventing unexpected deformation of the first elastic portion 14 or the peripheral portion 12 through which the second conductive wire 152 passes.

[0078] Please refer to Figures 2 to 6 . Figure 4 Drawing along Figure 3 A top view of the cross section along line IV-IV. Figure 5 Drawing along Figure 3 A top view of the V-V profile. Figure 6 Draw Figure 2 A partial top view of a microelectromechanical device.

[0079] like Figure 3 and Figure 4As shown, the first insulating wire 331 is disposed at the position where the first conductive wire 142 is projected onto the common electrode layer 33. The first insulating wire 331 penetrates the common electrode layer 33, such that a portion of the piezoelectric material layer 34 is located between the first conductive wire 142 and the first insulating wire 331. Therefore, it is difficult for an electric field to be generated between the first conductive wire 142 and the first insulating wire 331 that would pass through the piezoelectric material layer 34. The second insulating wire 332 is disposed at the position where the second conductive wire 152 is projected onto the common electrode layer 33. The second insulating wire 332 penetrates the common electrode layer 33, such that another portion of the piezoelectric material layer 34 is located between the second conductive wire 152 and the second insulating wire 332. Therefore, it is difficult for an electric field to be generated between the second conductive wire 152 and the second insulating wire 332 that would pass through the piezoelectric material layer 34. When an electrical signal flows through the first conductive wire 142 and the common electrode layer 33, the piezoelectric material layer 34 located between the first conductive wire 142 and the first insulating wire 331 will not deform due to the absence of an electric field. Similarly, when an electrical signal flows through the second conductive line 152 and the common electrode layer 33, the piezoelectric material layer 34 located between the second conductive line 152 and the second insulating line 332 will not deform due to the absence of an electric field.

[0080] Please refer to Figure 3 and Figure 5 . Figure 5 Drawing along Figure 3 A top view of the V-V profile. Specifically, Figure 5 The structures shown in the top view diagram are all structures of the piezoelectric material layer 34. Hereinafter, the geometry and connection relationship of the top view structure of the first elastic part 14 and the second elastic part 15 will be described through the piezoelectric material layer 34.

[0081] like Figure 2 and Figure 5 As shown, the first elastic part 14 also includes a first external connecting part 14a (such as...). Figure 5 (as shown in the thick solid line frame) and the first inner connecting part 14b ... Figure 5 (As shown in the thick solid line frame). The first elastic portion 14 surrounds the outer portion 12. The first outer connecting portion 14a connects to the fixing portion 11 and the first inner connecting portion 14b connects to the outer portion 12. The second elastic portion 15 also includes a second outer connecting portion 15a (as shown in the thick solid line frame). Figure 5 (as shown in the thick solid line frame) and the second inner connecting part 15b ... Figure 5 (As shown in the thick solid line frame). The second elastic part 15 surrounds the central part 13. The second outer connecting part 15a connects to the outer periphery part 12 and the second inner connecting part 15b connects to the central part 13.

[0082] For ease of explanation, the other first elastic part can be designated as 14'. The first elastic part 14' also includes a first external connecting part 14a' (e.g., ...). Figure 5 (as shown in the thick solid line frame) and the first inner connecting part 14b′ ... Figure 5 (As shown in the thick solid line frame). The shortest distance from the first outer connecting portion 14a of the first elastic portion 14 to the first inner connecting portion 14b' of the other first elastic portion 14' is D1. The distance from the first outer connecting portion 14a of the first elastic portion 14 to the first inner connecting portion 14b' of the first elastic portion 14 is D2. In this embodiment, D1 is less than D2. In other words, the first outer connecting portion 14a of the first elastic portion 14 is closer to the first inner connecting portion 14b' of the other first elastic portion 14'. Thus, the first elastic portion 14 can not only connect the fixing portion 11 and the peripheral portion 12, but also has sufficient length when surrounding the peripheral portion 12 so that the rigidity of the first elastic portion 14 along the axial direction Z can be less than the rigidity of the second elastic portion 15 along the axial direction Z.

[0083] On the other hand, for ease of explanation, another second elastic part can be designated as 15′. The second elastic part 15′ also includes a second external connecting part 15a′ (e.g., Figure 5 (as shown in the thick solid line frame) and the second inner connecting part 15b′ ... Figure 5 (As shown in the thick solid line frame). The shortest distance from the second outer connecting portion 15a of the second elastic portion 15 to the second inner connecting portion 15b' of the other second elastic portion 15' is D3. The distance from the second inner connecting portion 15b of the second elastic portion 15 to the second outer connecting portion 15a of the second elastic portion 15 is D4. In this embodiment, D3 is less than D4. In other words, the second outer connecting portion 15a of the second elastic portion 15 is closer to the second inner connecting portion 15b' of the other second elastic portion 15'. Thus, the second elastic portion 15 can not only connect the central portion 13 and the peripheral portion 12, but also allows the second elastic portion 15 to be easily designed with an appropriate length in a limited space. When the second elastic portion 15 has a specific length, it can have the optimal rigidity along the axial direction Z, thereby allowing the central portion 13 to generate optimal high-frequency vibration.

[0084] Furthermore, the direction in which the first outer connecting portion 14a extends is parallel to the direction in which the second outer connecting portion 15a extends. The direction in which the first inner connecting portion 14b extends is parallel to the direction in which the second inner connecting portion 15b extends. The same applies to the other first elastic portions 14, 14' and the other second elastic portions 15, 15'.

[0085] Please refer to Figure 3 and Figure 6 . Figure 6 Draw Figure 2 A partial top view of a microelectromechanical device.

[0086] like Figure 3 and Figure 6As shown, within the range of each first elastic portion 14, a first electrode 141 is disposed on a first piezoelectric material layer 341. Furthermore, within the range of each second elastic portion 15, a second electrode 151 is disposed on a second piezoelectric material layer 342.

[0087] Please refer to again Figure 2 and Figure 3 A first conductive line 142 is disposed on the piezoelectric material layer 34 of the fixing portion 11. The first conductive line 142 extends around a plurality of first elastic portions 14 and has multiple branches that are electrically connected to a plurality of first electrodes 141 respectively. When an electrical signal is applied to the first conductive line 142, the electrical signal can be simultaneously applied to the first electrodes 141. When the electrical signal flows through the first electrodes 141 and the common electrode layer 33, the first piezoelectric material layer 341 of the first elastic portion 14 can deform according to the electrical signal.

[0088] The second conductive line 152 is disposed on the first piezoelectric material layer 341 of one of the first elastic portions 14 and on the piezoelectric material layer 34 of the peripheral portion 12. The second conductive line 152 further extends around the plurality of second elastic portions 15 and has multiple branches that are electrically connected to the plurality of second electrodes 151 respectively. When an electrical signal is applied to the second conductive line 152, the electrical signal can be simultaneously applied to the second electrodes 151. When the electrical signal flows through the second electrodes 151 and the common electrode layer 33, the second piezoelectric material layer 342 of the second elastic portion 15 can deform according to the electrical signal.

[0089] The manufacturing process of microelectromechanical device 1 is described below. Please refer to... Figure 2 , Figure 3 , Figure 7 , Figure 8 , Figure 9 and Figure 10 . Figure 7 , Figure 8 , Figure 9 and Figure 10 Draw Figure 3 A side view sectional diagram of the manufacturing process of microelectromechanical devices.

[0090] like Figure 7 As shown, the substrate layer 21 and the insulating layer 22 are used to form Figure 3 The base 2. The substrate layer 31, the insulating layer 32, and the common electrode layer 33 are used to form the base 2. Figure 3 Thin film 3. In thin film 3, a first insulating line 331 and a second insulating line 332 are formed along the axial direction Z, penetrating the common electrode layer 33.

[0091] like Figure 8As shown, a piezoelectric material layer 34 is formed on the common electrode layer 33. A first electrode 141, a second electrode 151, a first conductive line 142, and a second conductive line 152 are formed on the piezoelectric material layer 34.

[0092] like Figure 9 As shown, a first gap 101, a first gap 101', a second gap 102, and a second gap 102' are formed from the piezoelectric material layer 34 toward the base 2. The first gaps 101, 101' and the second gaps 102, 102' penetrate the piezoelectric material layer 34, the common electrode layer 33, the insulating layer 32, and the substrate layer 31. Figure 2 and Figure 9 As shown, the first gaps 101, 101' and the second gaps 102, 102' separate the fixing part 11, the peripheral part 12, the central part 13, four first elastic parts 14 and four second elastic parts 15. In this embodiment, the number of first elastic parts 14 and second elastic parts 15 may be four, but in other embodiments, this is not a limitation.

[0093] Next, as follows Figure 10 As shown, a back cavity 20 is formed from the bottom surface 21a of the substrate layer 21. The back cavity 20 penetrates the substrate layer 21 and the insulating layer 22 and communicates with the first gap 101, the first gap 101', the second gap 102, and the second gap 102'. This completes the base 2.

[0094] The operation of microelectromechanical device 1 is described below. Please refer to... Figure 3 , Figure 11 and Figure 12 . Figure 11 and Figure 12 Draw Figure 3 A side view sectional diagram of a microelectromechanical device in operation.

[0095] like Figure 11 As shown, when a low-frequency electrical drive signal (e.g., a low-frequency voltage drive signal) is input to the first electrode 141 and a reference voltage is input to the common electrode layer 33, the first electrode 141 drives the first piezoelectric material layer 341 of the first elastic portion 14 to deform, thereby causing the peripheral portion 12 to vibrate along the axial direction Z with a first low-frequency amplitude H1. When the peripheral portion 12 generates the first low-frequency amplitude H1 along the axial direction Z, the central portion 13 can be simultaneously driven by the second elastic portion 15, so that the central portion 13 generates vibration along the axial direction Z with a second low-frequency amplitude H2. Since the rigidity of the first elastic portion 14 along the axial direction Z is less than that of the second elastic portion 15 along the axial direction Z, the first principal resonant frequency (f) of the peripheral portion 12 is... 1N1 The second primary resonant frequency (f) of the central part is less than that of the central part 13. 2N1 When the outer periphery 12 vibrates along the axial direction Z at a frequency lower than the first principal resonance frequency (f... 1N1When the central part 13 vibrates, it will also generate low-frequency vibrations. In order to ensure that the difference between the first low-frequency amplitude of the central part 13 and the second low-frequency amplitude of the peripheral part 12 during low-frequency vibration is not too large, the second principal resonant frequency (f) of the central part 13 is set to a certain value. 2N1 The first principal resonant frequency (f) far from the outer perimeter 12 1N1 In this embodiment, the second principal resonant frequency (f) of the central portion 13 2N1 ) relative to the first principal resonant frequency (f) of the outer part 12 1N1 The frequency ratio can be greater than a preset frequency ratio. In this embodiment, the preset frequency ratio is, for example, greater than or equal to 2.0. In this case, the difference between the first low-frequency amplitude H1 of the peripheral portion 12 and the second low-frequency amplitude H2 of the central portion 13 will be less than the preset low-frequency amplitude value. In this embodiment, the size of the first low-frequency amplitude H1 can be 7.73 micrometers and the size of the second low-frequency amplitude H2 can be 8.56 micrometers. In this case, the difference between the first low-frequency amplitude H1 and the second low-frequency amplitude H2 is 0.83 micrometers and less than a preset low-frequency amplitude value. For example, in this embodiment, the preset low-frequency amplitude value can be 1.0 micrometer. In other embodiments, a better preset low-frequency amplitude value can be selected within a range (e.g., greater than 0 micrometers and less than 1.0 micrometers) according to different design requirements. In other words, the difference between the first low-frequency amplitude H1 and the second low-frequency amplitude H2 will not be too large. In this case, the central portion 13 and the peripheral portion 12 can be considered as a whole simultaneously performing low-frequency vibration. Therefore, the effective area of ​​the thin film 3 for low-frequency vibration is increased, thereby increasing the sound pressure level of low-frequency audio.

[0096] like Figure 12 As shown, when no electrical signal is input to the first electrode 141, the peripheral portion 12 remains almost stationary. At this time, the first high-frequency amplitude H3 of the peripheral portion 12 along the axial direction Z is almost zero. When a high-frequency electrical drive signal (e.g., a high-frequency voltage drive signal) is input to the second electrode 151 and a reference voltage is input to the common electrode layer 33, the second electrode 151 drives the second piezoelectric material layer 342 of the second elastic portion 15 to deform, thereby causing the central portion 13 to vibrate along the axial direction Z with a second high-frequency amplitude H4. At this time, the central portion 13, through the second elastic portion 15, drives the peripheral portion 12 to vibrate along the axial direction Z with a second high-frequency amplitude H4. Since the rigidity of the second elastic portion 15 along the axial direction Z is greater than that of the first elastic portion 14 along the axial direction Z, the second principal resonant frequency (f) of the central portion 13... 2N1 The first principal resonant frequency (f) of the outer part 12 is greater than that of the outer part 12. 1N1 Therefore, when the central part 13 vibrates along the axial direction Z at a frequency close to the second principal resonant frequency (f... 2N1When the film vibrates, the second high-frequency amplitude H4 generated by the central portion 13 along the Z-axis will be greater than the first high-frequency amplitude H3 generated by the peripheral portion 12 along the Z-axis. At this time, the difference between the first high-frequency amplitude H3 and the second high-frequency amplitude H4 will be close to the second high-frequency amplitude H4. In other words, the difference between the first high-frequency amplitude H3 and the second high-frequency amplitude H4 is greater than a preset high-frequency amplitude value. In this embodiment, the size of the first high-frequency amplitude H3 can be 3.47 micrometers and the size of the second high-frequency amplitude H4 can be 7.28 micrometers. At this time, the difference between the first high-frequency amplitude H3 and the second high-frequency amplitude H4 is 3.81 micrometers and greater than a preset high-frequency amplitude value. For example, in this embodiment, the preset high-frequency amplitude value can be 3.0 micrometers. In other embodiments, a better preset high-frequency amplitude value can be selected within a range (e.g., greater than 3.0 micrometers and less than 10.0 micrometers) according to different design requirements. In this case, the area of ​​the central portion 13 can be considered as the effective area of ​​the film 3 during high-frequency vibration. Since the central portion 13 has a higher vibration frequency, the outer portion 12 is not required to give the thin film 3 a sufficient effective area to provide high-frequency audio with a sufficient sound pressure level.

[0097] Compare Figure 11 and Figure 12 As mentioned above, the difference between the first low-frequency amplitude H1 and the second low-frequency amplitude H2 (0.83 micrometers) is smaller than the difference between the first high-frequency amplitude H3 and the second high-frequency amplitude H4 (3.81 micrometers). Therefore, when the thin film 3 vibrates at low or high frequencies, the thin film 3 will have sufficient effective area to generate low-frequency audio with a sufficient sound pressure level or high-frequency audio with a sufficient sound pressure level.

[0098] The outer portion 12 has a first principal resonant frequency (f 1N1 The central part 13 has a second principal resonant frequency (f). 2N1 The first principal resonant frequency (f) 1N1 The frequency is less than the second principal resonance frequency (f). 2N1 When an electrical signal is applied to the first electrode 141 and the common electrode layer 33, causing the peripheral portion 12 and the central portion 13 driven by the peripheral portion 12 to generate low-frequency vibration, the frequency of this low-frequency vibration can be close to the first principal resonant frequency (f). 1N1 This allows the amplitudes generated by the outer portion 12 and the central portion 13 to approximate the amplitude of the outer portion 12 when it resonates naturally. Therefore, a large amount of electrical energy does not need to be applied to the first electrode 141 and the common electrode layer 33 to generate low-frequency vibrations with sufficient amplitude.

[0099] When an electrical signal is applied to the second electrode 151 and the common electrode layer 33 to cause the central portion 13 to vibrate at a high frequency, the frequency of this high-frequency vibration can be close to the second principal resonant frequency (f). 2N1In this way, the central portion 13 can generate natural resonance. Therefore, a large amount of electrical energy does not need to be applied to the second electrode 151 and the common electrode layer 33 to generate high-frequency vibrations with sufficient amplitude.

[0100] In addition, the outer portion 12 has at least one first sub-resonant frequency (f 1N2 f 1N3 ...), that is, the first principal resonant frequency (f) of the outer part 12. 1N1 (The resonant frequencies other than) the first secondary resonant frequency and the first primary resonant frequency (f 1N1 The difference between the first secondary resonant frequency and the second primary resonant frequency (f) is smaller than that between the first secondary resonant frequency and the second primary resonant frequency (f). 2N1 The difference between the first secondary resonant frequency and the second primary resonant frequency (f) is significant. In other words, the first secondary resonant frequency will not be too close to the second primary resonant frequency (f). 2N1 It will be closer to the first principal resonant frequency (f) 1N1 Therefore, when the central portion 13 vibrates at high frequencies, the first high-frequency amplitude H3 generated by the peripheral portion 12 will not be too large. This ensures that the sound pressure of the high-frequency audio generated by the central portion 13 is not interfered with by the sound pressure of the low-frequency audio. In another embodiment, when the distance C between the center C of the peripheral portion 12 and the central portion 13 increases, the first secondary resonant frequency and the first primary resonant frequency (f...)... 1N1 The difference between the first secondary resonant frequency and the second primary resonant frequency (f) will decrease. In other words, when the distance between the outer edge 12a or inner edge 12b of the peripheral portion 12 and the center C of the central portion 13 increases, the difference between the first secondary resonant frequency and the second primary resonant frequency (f) will decrease. 2N1 The difference will increase.

[0101] Please refer to Figure 13 . Figure 13 A perspective view of a microelectromechanical device (MEMS) assembly with multiple vibrating parts according to another embodiment of the present invention is shown. In this embodiment, the MEMS assembly 1a includes MEMS 1, MEMS 1′, MEMS 1″, and MEMS 1″′ arranged in an array and connected to each other. The first principal resonant frequency (f) of each of the MEMS 1, MEMS 1′, MEMS 1″, and MEMS 1″′ is... 1N1 and the second principal resonance frequency (f 2N1 They can be different from each other. This microelectromechanical device assembly 1a can be applied to a wider frequency range.

[0102] Please refer to Figure 14 and Figure 15 . Figure 14 A top view schematic diagram of a microelectromechanical device having multiple vibrating parts according to another embodiment of the present invention is shown. Figure 15 Drawing along Figure 14 A side view of the XV-XV line section.

[0103] like Figure 14As shown, the microelectromechanical device 4 includes a base 2, a thin film 5, a first conductive line 442, a second conductive line 452, and a substrate 6. The base 2 and... Figure 2 The base 2 of the microelectromechanical device 1 shown is similar, and its description is omitted. For example... Figure 15 As shown, the film 5 includes a fixing part 41, a peripheral part 42, a central part 43, a plurality of first elastic parts 44 and a plurality of second elastic parts 45.

[0104] A fixing part 41 is disposed on the base 2. The fixing part 41 surrounds the outer periphery 42. A first elastic part 44 connects the fixing part 41 and the outer periphery 42. The outer periphery 42 surrounds the central part 43. A second elastic part 45 connects the outer periphery 42 and the central part 43. The rigidity of the first elastic part 44 along the axial direction Z is less than the rigidity of the second elastic part 45 along the axial direction Z.

[0105] The fixing part 41, the peripheral part 42, the central part 43, the first elastic part 44, and the second elastic part 45 all include a stacked substrate layer 51 and an insulating layer 52 (e.g., Figure 15 (As shown). Each first elastic portion 44 further includes a first electrode 441 disposed on the insulating layer 52. A first conductive wire 442 is disposed on the insulating layer 52 of the fixing portion 41. The first conductive wire 442 is electrically connected to the first electrode 441 (e.g., as shown). Figure 14 (As shown).

[0106] Each second elastic portion 45 further includes a second electrode 451 disposed on the insulating layer 52. A second conductive line 452 is disposed on the insulating layer 52 of one of the first elastic portions 44 and on the insulating layer 52 of the peripheral portion 42. The second conductive line 452 is electrically connected to the second electrode 451.

[0107] like Figure 15 As shown, the base 2 is disposed on the substrate 6. The substrate 6 has a plurality of first fixed electrodes 71 and a plurality of second fixed electrodes 72. The projection of each first electrode 441 along the Z-axis onto the substrate 6 overlaps with the projection of each first fixed electrode 71 along the Z-axis onto the substrate 6. Each first elastic portion 44 is suspended above each first fixed electrode 71. The projection of each second electrode 451 along the Z-axis onto the substrate 6 overlaps with the projection of each second fixed electrode 72 along the Z-axis onto the substrate 6. Each second elastic portion 45 is suspended above each second fixed electrode 72.

[0108] The following describes the operation of the microelectromechanical device 4. Please refer to... Figure 15 , Figure 16 and Figure 17 . Figure 16 and Figure 17 Draw Figure 15 A side view sectional diagram of a microelectromechanical device in operation.

[0109] like Figure 16As shown, when a low-frequency electrical drive signal is input to the first electrode 441 and the first fixed electrode 71, an electrostatic force is generated between the first electrode 441 and the first fixed electrode 71, causing the peripheral portion 42 to generate a first low-frequency amplitude H5 along the axial direction Z. Since the rigidity of the second elastic portion 45 along the axial direction Z is greater than that of the first elastic portion 44 along the axial direction Z, the peripheral portion 42 can drive the central portion 43 through the second elastic portion 45, causing the central portion 43 to generate a second low-frequency amplitude H6 along the axial direction Z. Therefore, when a low-frequency electrical drive signal is input to the first electrode 441 and the first fixed electrode 71, both the peripheral portion 42 and the central portion 43 will generate low-frequency vibrations along the axial direction Z. Since the rigidity of the second elastic portion 45 along the axial direction Z is greater than that of the first elastic portion 44 along the axial direction Z, the difference between the first low-frequency amplitude H5 and the second low-frequency amplitude H6 is extremely small.

[0110] like Figure 17 As shown, when no electrical signal is input to the first electrode 441 and the first fixed electrode 71, the peripheral portion 42 remains almost stationary. At this time, the first high-frequency amplitude H7 of the peripheral portion 42 along the axial direction Z is almost zero. When a high-frequency electrical drive signal is input to the second electrode 451 and the second fixed electrode 72, the second electrode 451 and the second fixed electrode 72 generate another electrostatic force, causing the central portion 43 to generate a second high-frequency amplitude H8 along the axial direction Z. Although the central portion 43 can also drive the peripheral portion 42 through the second elastic portion 45, the first high-frequency amplitude H7 of the peripheral portion 42 along the axial direction Z will be very small. In addition, since the rigidity of the second elastic portion 45 along the axial direction Z is greater than that of the first elastic portion 44 along the axial direction Z, and the high-frequency electrical drive signal drives the central portion 43 to generate a vibration frequency of the second principal resonant frequency (f... 2N1 The high-frequency vibration of the first high-frequency amplitude H7 is smaller than that of the second high-frequency amplitude H8. On the other hand, when the high-frequency electrical drive signal is input to the second electrode 451 and the second fixed electrode 72, the difference between the first high-frequency amplitude H7 and the second high-frequency amplitude H8 is almost the same as that of the second high-frequency amplitude H8.

[0111] Based on the above explanation and comparison Figure 16 and Figure 17 Subsequently, the difference between the first low-frequency amplitude H5 and the second low-frequency amplitude H6 is smaller than the difference between the first high-frequency amplitude H7 and the second high-frequency amplitude H8.

[0112] Please refer to Figure 18 . Figure 18 A top view schematic diagram of a microelectromechanical device having multiple vibrating parts according to another embodiment of the present invention is shown. Figure 18 The microelectromechanical device 8 shown is Figure 2 and Figure 3 The similarities between the microelectromechanical device 1 shown will not be elaborated upon below.

[0113] like Figure 18As shown, the microelectromechanical device 8 with multiple vibrating parts includes a thin film, a first conductive line 842, and a second conductive line 852. The thin film includes a fixing part 81, a peripheral part 82, a central part 83, a plurality of first elastic parts 84, and a plurality of second elastic parts 85. In this embodiment, there may be four first elastic parts 84 and four second elastic parts 85, but this is not a limitation.

[0114] A fixing portion 81 surrounds a peripheral portion 82. A first gap 801, a first elastic portion 84, and a first gap 801' are provided between the fixing portion 81 and the peripheral portion 82. Each first elastic portion 84 is separated from the fixing portion 81 by the first gap 801. Each first elastic portion 84 is separated from the peripheral portion 82 by another first gap 801'. Each first elastic portion 84 is located between the first gap 801 and the other first gap 801' and connects the fixing portion 81 and the peripheral portion 82. The peripheral portion 82 surrounds a central portion 83. The peripheral portion 82 and the central portion 83 are separated by a second gap 802. Each second elastic portion 85 is located between the peripheral portion 82 and the central portion 83 and directly connects the peripheral portion 82 and the central portion 83 with the shortest distance. Therefore, the rigidity of each second elastic portion 85 along an axial direction Z is greater than the rigidity of each first elastic portion 84 along an axial direction Z. On the other hand, the rigidity of each of the first elastic parts 84 along the axial direction Z is less than the rigidity of each of the second elastic parts 85 along the axial direction Z.

[0115] Each first elastic portion 84 further includes a first electrode 841 disposed on the piezoelectric material layer 94. Each second elastic portion 85 further includes a second electrode 851 disposed on the piezoelectric material layer 94. A first conductive wire 842 is disposed on the piezoelectric material layer 94 of the fixing portion 11. A second conductive wire 852 is disposed on the piezoelectric material layer 94 of one of the first elastic portions 84 and on the piezoelectric material layer 94 of the peripheral portion 12.

[0116] In summary, the microelectromechanical device with multiple vibrating sections in one embodiment of the present invention achieves low-frequency vibration in both the peripheral and central portions by making the difference between the first and second low-frequency amplitudes smaller than the difference between the first and second high-frequency amplitudes, while simultaneously causing the central portion to vibrate at high frequencies. Therefore, the microelectromechanical device with multiple vibrating sections in one embodiment of the present invention can generate sufficient sound pressure levels during both low-frequency and high-frequency vibrations, thus satisfying the response requirements for both high-frequency and low-frequency audio. Furthermore, multiple microelectromechanical devices can be used to generate audio with a wide frequency range.

Claims

1. A microelectromechanical device (MEMS) with multiple vibrating parts, comprising: Base; as well as Thin film, including: A fixing part is provided on the base; Peripheral area; The central part, surrounded by the outer part; At least one first elastic portion, including at least one first electrode; and At least one second elastic portion includes at least one second electrode; The at least one first elastic portion connects the fixed portion and the peripheral portion, and the at least one second elastic portion connects the peripheral portion and the central portion; When a low-frequency electrical drive signal is input to the at least one first electrode, the peripheral portion generates a first low-frequency amplitude along the axial direction and the central portion generates a second low-frequency amplitude along the axial direction, the axial direction being parallel to the normal vector of the base. When a high-frequency electrical drive signal is input to the at least one second electrode, the peripheral portion generates a first high-frequency amplitude along the axial direction and the central portion generates a second high-frequency amplitude along the axial direction. The difference between the first low-frequency amplitude and the second low-frequency amplitude is smaller than the difference between the first high-frequency amplitude and the second high-frequency amplitude.

2. The microelectromechanical device with multiple vibration parts as claimed in claim 1, wherein the difference between the first low-frequency amplitude and the second low-frequency amplitude is less than a preset value of low-frequency amplitude and the difference between the first high-frequency amplitude and the second high-frequency amplitude is greater than a preset value of high-frequency amplitude, the preset value of low-frequency amplitude is less than or equal to 1.0 micrometer and the preset value of high-frequency amplitude is greater than or equal to 3.0 micrometer.

3. The microelectromechanical device with multiple vibration sections as claimed in claim 1, wherein the at least one first elastic section further includes at least one first piezoelectric material layer, and the at least one first electrode drives the at least one first piezoelectric material layer to generate the first low-frequency amplitude along the axial direction of the peripheral section and to generate the second low-frequency amplitude along the axial direction of the central section.

4. The microelectromechanical device with multiple vibration sections as claimed in claim 1, wherein the at least one second elastic section further includes at least one second piezoelectric material layer, and the at least one second electrode drives the at least one second piezoelectric material layer to generate the first high-frequency amplitude along the axial direction of the peripheral section and to generate the second high-frequency amplitude along the axial direction of the central section.

5. The microelectromechanical device with multiple vibration sections as claimed in claim 1, further comprising a substrate, wherein the base is disposed on the substrate, and the substrate has at least one first fixed electrode and at least one second fixed electrode.

6. The microelectromechanical device having multiple vibrating parts as claimed in claim 5, wherein when the at least one first electrode generates an electrostatic force with the at least one first fixed electrode, the peripheral portion generates the first low-frequency amplitude along the axial direction, and the central portion generates the second low-frequency amplitude along the axial direction.

7. The microelectromechanical device having multiple vibration sections as claimed in claim 5, wherein when the at least one second electrode generates another electrostatic force with the at least one second fixed electrode, the peripheral portion generates the first high-frequency amplitude along the axial direction, and the central portion generates the second high-frequency amplitude along the axial direction.

8. The microelectromechanical device having multiple vibrating parts as claimed in claim 1, wherein the rigidity of the at least one second elastic part along the axial direction is greater than the rigidity of the at least one first elastic part along the axial direction.

9. The microelectromechanical device having multiple vibration parts as claimed in claim 8, wherein the ratio of the rigidity of the at least one second elastic part along the axial direction to the rigidity of the at least one first elastic part along the axial direction is greater than a preset rigidity ratio, the preset rigidity ratio being greater than or equal to 3.

0.

10. The microelectromechanical device having multiple vibrating parts as claimed in claim 8, wherein the length of the at least one first elastic part is greater than the length of the at least one second elastic part.

11. The microelectromechanical device having multiple vibrating parts as claimed in claim 8, wherein the thickness of the at least one first elastic part is less than the thickness of the at least one second elastic part.

12. The microelectromechanical device having multiple vibrating parts as claimed in claim 8, wherein the width of the at least one first elastic part is smaller than the width of the at least one second elastic part.

13. The microelectromechanical device having multiple vibrating parts as claimed in claim 8, wherein the number of the at least one first elastic part is less than the number of the at least one second elastic part.

14. The microelectromechanical device having multiple vibrating parts as claimed in claim 8, wherein the at least one first elastic part further includes a first outer connecting part and a first inner connecting part, the at least one first elastic part surrounds the peripheral part, the first outer connecting part is connected to the fixing part and the first inner connecting part is connected to the peripheral part.

15. The microelectromechanical device having multiple vibrating parts as claimed in claim 14, wherein the at least one second elastic part further includes a second outer connecting part and a second inner connecting part, the at least one second elastic part surrounds the central part, the second outer connecting part is connected to the peripheral part and the second inner connecting part is connected to the central part.

16. The microelectromechanical device having multiple vibration sections as claimed in claim 14, wherein the number of the at least one first elastic section is multiple, and the shortest distance from the first outer connection portion of one of the first elastic sections to the first inner connection portion of another of the first elastic sections is less than the distance from the first inner connection portion of one of the first elastic sections to the first outer connection portion of another of the first elastic sections.

17. The microelectromechanical device having multiple vibration sections as claimed in claim 15, wherein the number of the at least one second elastic section is multiple, and the shortest distance from the second outer connection section of one of the second elastic sections to the second inner connection section of another of the second elastic sections is less than the distance from the second inner connection section of one of the second elastic sections to the second outer connection section of another of the second elastic sections.

18. The microelectromechanical device with multiple vibrating parts as claimed in claim 1, wherein the peripheral part has a first primary resonant frequency, the central part has a second primary resonant frequency, and the first primary resonant frequency is less than the second primary resonant frequency.

19. The microelectromechanical device having multiple vibration parts as claimed in claim 18, wherein the frequency ratio of the second primary resonant frequency to the first primary resonant frequency is greater than a preset frequency ratio, and the preset frequency ratio is greater than or equal to 2.

0.

20. The microelectromechanical device having multiple vibrating parts as claimed in claim 18, wherein the peripheral portion has at least one first secondary resonant frequency, the difference between the first secondary resonant frequency and the first primary resonant frequency being less than the difference between the first secondary resonant frequency and the second primary resonant frequency.

21. The microelectromechanical device with multiple vibrating parts as claimed in claim 1, further comprising a first conductive line and a second conductive line, the first conductive line being disposed on the thin film and electrically connected to the at least one first electrode, and the second conductive line being disposed on the thin film and electrically connected to the at least one second electrode.

22. The microelectromechanical device with multiple vibrating parts as claimed in claim 21, wherein the thin film further includes a first insulating wire, a second insulating wire, a common electrode layer, and a piezoelectric material layer disposed on the common electrode layer, the first insulating wire being disposed at the position where the first conductive wire is projected onto the common electrode layer, the first insulating wire penetrating the common electrode layer such that a portion of the piezoelectric material layer is located between the first conductive wire and the first insulating wire, the second insulating wire being disposed at the position where the second conductive wire is projected onto the common electrode layer, the second conductive wire penetrating the common electrode layer such that a portion of the piezoelectric material layer is located between the second conductive wire and the second insulating wire.

23. The microelectromechanical device having multiple vibrating parts as claimed in claim 22, wherein the first conductive line is disposed on the piezoelectric material layer of the fixing part, and the width of the first conductive line is smaller than the width of the at least one first electrode.

24. The microelectromechanical device having multiple vibrating parts as claimed in claim 22, wherein the second conductive line is disposed on the piezoelectric material layer of the at least one first elastic part and on the piezoelectric material layer of the peripheral part, and the width of the second conductive line is smaller than the width of the at least one second electrode.

25. A microelectromechanical device having multiple vibrating parts, comprising: Base; as well as Thin film, including: A fixing part is provided on the base; Peripheral area; The central part, surrounded by the outer part; At least one first elastic part, including: At least one first electrode; At least one first piezoelectric material layer, wherein the at least one first electrode is electrically connected to the at least one first piezoelectric material layer; First external connection part; and A first inner connecting portion, wherein the at least one first elastic portion surrounds the outer peripheral portion, the first outer connecting portion connects to the fixed portion and the first inner connecting portion connects to the outer peripheral portion; and At least one second elastic part, including: At least one second electrode; At least one second piezoelectric material layer, wherein the at least one second electrode is electrically connected to the at least one second piezoelectric material layer; Second external connecting part; and The second inner connecting portion, wherein the at least one second elastic portion surrounds the central portion, the second outer connecting portion connects to the peripheral portion, and the second inner connecting portion connects to the central portion. The rigidity of the at least one first elastic part along the axial direction is less than the rigidity of the at least one second elastic part along the axial direction.

26. The microelectromechanical device having multiple vibrating parts as claimed in claim 25, wherein the length of the at least one first elastic part is greater than the length of the at least one second elastic part.

27. The microelectromechanical device having multiple vibrating parts as claimed in claim 25, wherein the width of the at least one first elastic part is smaller than the width of the at least one second elastic part.

28. The microelectromechanical device having multiple vibrating parts as claimed in claim 25, wherein the thickness of the at least one first elastic part is less than the thickness of the at least one second elastic part.

29. The microelectromechanical device having multiple vibration sections as claimed in claim 25, wherein the number of the at least one first elastic section is multiple, and the shortest distance from the first outer connection portion of one of the first elastic sections to the first inner connection portion of another of the first elastic sections is less than the distance from the first inner connection portion of one of the first elastic sections to the first outer connection portion of that one of the first elastic sections.

30. The microelectromechanical device having multiple vibration sections as claimed in claim 25, wherein the number of the at least one second elastic section is multiple, and the shortest distance from the second outer connection section of one of the second elastic sections to the second inner connection section of another of the second elastic sections is less than the distance from the second inner connection section of one of the second elastic sections to the second outer connection section of another of the second elastic sections.

31. The microelectromechanical device having multiple vibration sections as claimed in claim 25, wherein one direction in which the first outer connecting portion extends is parallel to another direction in which the second outer connecting portion extends, and one direction in which the first inner connecting portion extends is parallel to another direction in which the second inner connecting portion extends.

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