Semiconductor structure and method for manufacturing the same, light-emitting device and method for manufacturing the same

Abstract

The present application provides a semiconductor structure and a manufacturing method thereof, a light-emitting device and a manufacturing method thereof. The semiconductor structure includes: a substrate, a first semiconductor layer, an isolation layer, an active layer, a second semiconductor layer, a first electrode and a second electrode; the second semiconductor layer is a conductive DBR structure; the first semiconductor layer includes a flat portion, a first protrusion portion and a second protrusion portion stacked in sequence along the vertical direction, the second protrusion portions correspond to the first through holes one by one, and the second protrusion portions are arranged at intervals, and the side surface of the second protrusion portion is an inclined surface; the active layer, the second semiconductor layer and the first electrode are stacked in sequence on the second protrusion portion of the first semiconductor layer; the isolation layer is provided with a second through hole, and the second electrode is formed in the second through hole. The light-emitting device includes the semiconductor structure. By setting the second semiconductor layer as a conductive DBR structure and setting the side wall of the epitaxial structure as an inclined surface, the light-emitting efficiency of the semiconductor device can be improved in the present application.

Description

Technical Field

[0001] The present application relates to the field of semiconductors, and particularly to a semiconductor structure and a manufacturing method thereof, a light-emitting device and a manufacturing method thereof. Background Art

[0002] Currently, gallium nitride-based materials are usually used to prepare LED light-emitting devices, and the epitaxial sidewalls of the prepared LED light-emitting devices are vertical structures. However, due to such a vertical structure and the high refractive index of gallium nitride, most of the light is reflected when it reaches the surface of the LED light-emitting device, causing a large amount of light to be confined inside the LED chip, resulting in low light extraction efficiency.

[0003] Therefore, how to further improve the light-emitting efficiency of LED light-emitting devices remains a difficult problem to be solved urgently at present. Summary of the Invention

[0004] The present application provides a semiconductor structure and a manufacturing method thereof, a light-emitting device and a manufacturing method thereof, which can improve the light-emitting efficiency of the light-emitting device.

[0005] To achieve the above object, according to the first aspect of the embodiments of the present application, a semiconductor structure is provided. The semiconductor structure includes: a substrate, a first semiconductor layer, an isolation layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode; the first semiconductor layer and the second semiconductor layer have opposite conductivity types, and the second semiconductor layer is a conductive DBR structure;

[0006] The first semiconductor layer includes a flat portion, a first protrusion portion, and a second protrusion portion that are sequentially stacked in the vertical direction. The flat portion is formed on the substrate, the isolation layer is formed on the flat portion and is provided with a plurality of first through holes in the vertical direction. The first protrusion portion is formed in the first through holes, the second protrusion portion is formed on the first protrusion portion, the second protrusion portion corresponds to the first through hole one by one, and the second protrusion portions are spaced apart, and the side

[0007] surface is an inclined surface;

[0008] The active layer, the second semiconductor layer, and the first electrode are sequentially stacked on the second protrusion portion of the first semiconductor layer;

[0009] The isolation layer is further provided with a second through hole in the vertical direction, and the second electrode is formed in the second through hole and is connected to the first semiconductor layer.

[0010] Optionally, the conductive DBR structure is a porous conductive DBR structure, and the porous conductive DBR structure includes alternately stacked first porous conductive layers and second porous conductive layers formed after electrochemical etching. Among them, a plurality of first holes are formed in the first porous conductive layer, and a plurality of second holes are formed in the second porous conductive layer. The diameters of the first holes are different from those of the second holes.

[0011] Optionally, the materials of the first porous conductive layer and the second porous conductive layer are gallium nitride-based materials.

[0012] Optionally, the included angle between the side surface of the second protrusion and the horizontal plane is a first included angle, and the degree range of the first included angle is 40 degrees - 70 degrees.

[0013] Optionally, the side wall of the first through hole is an inclined surface, and the inclination direction of the side wall of the first through hole is the same as the inclination direction of the side surface of the second protrusion.

[0014] Optionally, the shape of the second protrusion is conical, frustum-shaped, pyramid-shaped or frustum-shaped.

[0015] Optionally, a transparent electrode is further provided between the second semiconductor layer and the first electrode.

[0016] Optionally, the material of the first semiconductor layer is a gallium nitride-based material.

[0017] According to the second aspect of the embodiments of the present application, a light-emitting device is provided. The light-emitting device includes the semiconductor structure as described above. The light-emitting device further includes a circuit board and a wavelength conversion medium layer;

[0018] The circuit board is provided with a first pad and a second pad. The first electrode of the semiconductor structure is connected to the first pad on the circuit board, and the second electrode of the semiconductor structure is connected to the second pad on the circuit board;

[0019] A plurality of third through holes are formed on the side of the substrate away from the first semiconductor layer. The third through holes correspond to the first through holes one by one, and the wavelength conversion medium layer is disposed in at least one of the third through holes.

[0020] Optionally, the side wall of the third through hole is an inclined surface.

[0021] Optionally, the light-emitting device further includes a reflective layer, and the reflective layer is coated on the side wall of the third through hole.

[0022] According to the third aspect of the embodiments of the present application, a method for manufacturing a semiconductor structure is provided for manufacturing the semiconductor structure as described above. The method for manufacturing the semiconductor structure includes the following steps:

[0023] S1: Form a flat portion of the first semiconductor layer on the substrate; form the isolation layer on the flat portion of the first semiconductor layer, form a plurality of the first through holes on the isolation layer; form a first protrusion of the first semiconductor layer in the first through hole of the isolation layer, and form a second protrusion of the first semiconductor layer on the first protrusion;

[0024] S2: Form an active layer on the second protrusion of the first semiconductor layer;

[0025] S3: Form the second semiconductor layer with a conductivity type opposite to that of the first semiconductor layer on the active layer;

[0026] S4: Form the first electrode on the second semiconductor layer; form the second through hole on the isolation layer, form the second electrode connected to the first semiconductor layer in the second through hole, and form the semiconductor structure.

[0027] Optionally, in step S2, an active layer is formed on the second protrusion of the first semiconductor layer by selective growth;

[0028] In step S3, the second semiconductor layer with a conductivity type opposite to that of the first semiconductor layer is formed on the active layer by selective growth;

[0029] In step S4, the first electrode is formed on the second semiconductor layer by selective growth.

[0030] According to the fourth aspect of the embodiments of the present application, a manufacturing method of a light-emitting device is provided. The manufacturing method of the light-emitting device includes the manufacturing method of the semiconductor structure as described above, and the manufacturing method of the light-emitting device further includes:

[0031] S5: Mount the semiconductor structure on the front surface of the circuit board. The circuit board is provided with a first pad and a second pad, connect the first electrode of the semiconductor structure to the first pad on the circuit board, and connect the second electrode of the semiconductor structure to the second pad on the circuit board;

[0032] S6: Open a plurality of third through holes on the side of the substrate away from the first semiconductor layer, and the third through holes correspond to the first through holes one by one;

[0033] S7: Form a wavelength conversion medium layer in at least one of the third through holes.

[0034] Optionally, the side wall of the third through hole is an inclined surface.

[0035] Optionally, after step S6 and before step S7, it further includes:

[0036] A reflective layer is formed on the sidewall of the third through hole.

[0037] For the semiconductor structure and its manufacturing method, and the light-emitting device and its manufacturing method of the present application, by setting the second semiconductor layer as a conductive DBR structure, on the one hand, the conductive DBR structure serves as an essential part of the P-N junction in the light-emitting device. On the other hand, the conductive DBR structure can form resonance for light of a suitable wavelength, thereby improving the light-emitting efficiency. At the same time, by setting the sidewall of the epitaxial structure as an inclined plane, not only can a certain reflection angle be provided, but also the area of the reflection surface can be increased, so that more light can be reflected to the light-emitting surface, thereby improving the light extraction efficiency. It should be noted that by setting the side surface of the second protrusion of the first semiconductor layer as an inclined plane, the sidewalls of the active layer, the second semiconductor layer, and the first electrode formed on its outer surface are all inclined planes, so as to achieve the effect that the sidewall of the final epitaxial structure is an inclined plane. And because the sidewall of the active layer is set as an inclined plane, the light-emitting area of the light-emitting device can be increased without increasing the size of the light-emitting device. Description of the Drawings

[0038] Figure 1 is a cross-sectional structure schematic diagram of the semiconductor structure of Embodiment 1 of the present application.

[0039] Figure 2 is Figure 1 a partial enlarged view of Part A of

[0040] Figure 3 is a cross-sectional structure schematic diagram of the second semiconductor layer of the semiconductor structure of Embodiment 1 of the present application.

[0041] Figures 4(a) - 4(g) is a process flow diagram of the manufacturing method of the semiconductor structure of Embodiment 1 of the present application.

[0042] Figure 5 is a cross-sectional structure schematic diagram of the light-emitting component of Embodiment 2 of the present application.

[0043] Figures 6(a) - 6(d) is a process flow diagram of the manufacturing method of the light-emitting component of Embodiment 2 of the present application. Detailed Description of the Embodiments

[0044] Here, the exemplary embodiments will be described in detail, and the examples are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0045] Embodiment 1

[0046] As Figure 1 and Figure 2 shown, this embodiment provides a semiconductor structure 100. The semiconductor structure 100 includes: a substrate 110, a first semiconductor layer 120, an isolation layer 130, an active layer 140, a second semiconductor layer 150, a first electrode 160, and a second electrode 170. The conductive types of the first semiconductor layer 120 and the second semiconductor layer 150 are opposite, that is, when the first semiconductor layer 120 is a P-type semiconductor layer, the second semiconductor layer 150 is an N-type semiconductor layer; or when the first semiconductor layer 120 is an N-type semiconductor layer, the second semiconductor layer 150 is a P-type semiconductor layer.

[0047] As Figure 3 shown, the second semiconductor layer 150 is a conductive DBR structure, and the conductive DBR structure is a porous conductive DBR structure. Specifically, the porous conductive DBR structure includes first porous conductive layers 151 and second porous conductive layers 152 that are alternately stacked after electrochemical etching. Among them, a plurality of first holes 1511 are formed in the first porous conductive layer 151, and a plurality of second holes 1521 are formed in the second porous conductive layer 152. The diameters of the first holes 1511 and the second holes 1521 are different.

[0048] The materials of the first porous conductive layer 151 and the second porous conductive layer 152 are gallium nitride-based materials, such as materials like GaN, AlGaN, GaInN, AlGaInN, etc. The doping concentrations of the first porous conductive layer 151 and the second porous conductive layer 152 are different.

[0049] In this way, by setting the second semiconductor layer 150 as a conductive DBR structure, on the one hand, the conductive DBR structure serves as a part of the essential P-N junction in the light-emitting device. On the other hand, the conductive DBR structure can form resonance for light of a suitable wavelength, thereby improving the light-emitting efficiency.

[0050] Please refer back to Figure 2, the first semiconductor layer 120 includes a flat portion 121, a first convex portion 122, and a second convex portion 123 that are sequentially stacked along the vertical direction Y. The flat portion 121 is formed on the substrate 110. An isolation layer 130 is formed on the flat portion 121 and is provided with a plurality of first through holes 131 along the vertical direction Y. The first convex portion 122 is formed in the first through holes 131. The second convex portion 123 is formed on the first convex portion 122. The second convex portions 123 correspond to the first through holes 131 one by one, and the second convex portions 123 are arranged at intervals. The side surface 1231 of the second convex portion is an inclined surface, that is, the side surface of the second convex portion is inclined in a direction close to its center. The active layer 140, the second semiconductor layer 150, and the first electrode 160 are sequentially stacked on the second convex portion 123 of the first semiconductor layer 120.

[0051] In this way, by setting the side surface 1231 of the second convex portion of the first semiconductor layer 120 as an inclined surface, the side walls of the active layer 140, the second semiconductor layer 150, and the first electrode 160 formed on its outer surface are all inclined surfaces, so as to achieve the effect that the side walls of the final epitaxial structure are inclined surfaces. By setting the side walls of the epitaxial structure as inclined surfaces, not only can a certain reflection angle be provided, but also the area of the reflection surface can be increased, so that more light can be reflected to the light-emitting surface, thereby improving the light extraction efficiency. It should be noted that by setting the side surface of the second convex portion of the first semiconductor layer as an inclined surface, the side walls of the active layer 140, the second semiconductor layer 150, and the first electrode 160 formed on its outer surface are all inclined surfaces, so as to achieve the effect that the side walls of the final epitaxial structure are inclined surfaces; and, due to the setting that the side wall of the active layer 140 is an inclined surface, the light-emitting area of the light-emitting device can be increased without increasing the size of the light-emitting device.

[0052] Moreover, since the active layer 140, the second semiconductor layer 150, and the first electrode 160 are all formed corresponding to the second convex portion 123 of the first semiconductor layer 120, a plurality of spaced-apart epitaxial structures corresponding to the number of the second convex portions 123 are finally formed. The width w of the second semiconductor layer 150 in each epitaxial structure is less than or equal to 200 um, preferably less than or equal to 100 um.

[0053] Optionally, the shape of the second convex portion 123 is conical, frustum-shaped, pyramidal, or frustum-shaped, for example, hexagonal frustum or hexagonal pyramid.

[0054] In this embodiment, the included angle between the side surface 1231 of the second convex portion and the horizontal plane is the first included angle α, and the degree range of the first included angle α is 40 degrees - 70 degrees.

[0055] It should be noted that each second protrusion 123 can be formed not only on the corresponding first protrusion 122, but also on a part of the isolation layer 130 located on the outer peripheral edge of the first protrusion 122 at the same time.

[0056] The side wall 1311 of the first through hole is an inclined surface, and the included angle between the side wall 1311 of the first through hole and the horizontal plane is the second included angle β, and the degree range of the second included angle β is 0 degree - 90 degrees. The inclination direction of the side wall 1311 of the first through hole is the same as the inclination direction of the side surface 1231 of the second protrusion, so as to avoid blocking the optical path of the light reflected from the side wall of the epitaxial structure to the light emitting surface, thereby further improving the light emitting efficiency.

[0057] In this embodiment, a transparent electrode is further provided between the second semiconductor layer 150 and the first electrode 160 to increase the contact between the second semiconductor layer 150 and the first electrode 160. The material of the transparent electrode is ITO.

[0058] The material of the first semiconductor layer 120 is a gallium nitride-based material, such as materials like GaN, AlGaN, GaInN, AlGaInN, etc.

[0059] The isolation layer 130 is further provided with a second through hole 132 in the vertical direction, the second electrode 170 is formed in the second through hole 132, and is connected to the first semiconductor layer 120. The materials of the first electrode 160 and the second electrode 170 can be Cr, or Al, or Ti, or Pt.

[0060] Figures 4(a) - 4(g) It is a process flow chart of the manufacturing method of the semiconductor structure of Embodiment 1 of the present application. This manufacturing method is used to manufacture the semiconductor structure as described above. The manufacturing method of the semiconductor structure includes the following steps:

[0061] S10: Form a flat portion of the first semiconductor layer on the substrate; form the isolation layer on the flat portion of the first semiconductor layer, form a plurality of the first through holes on the isolation layer; form a first protrusion of the first semiconductor layer in the first through hole of the isolation layer, and form a second protrusion of the first semiconductor layer on the first protrusion;

[0062] S20: Form an active layer on the second protrusion of the first semiconductor layer;

[0063] S30: Form the second semiconductor layer with a conductivity type opposite to that of the first semiconductor layer on the active layer;

[0064] S40: Form the first electrode on the second semiconductor layer; form the second through hole on the isolation layer, form the second electrode connected to the first semiconductor layer in the second through hole, and form the semiconductor structure.

[0065] Specifically, in step S10, it includes:

[0066] Step S11: As shown in FIG. 4(a), through the first epitaxial growth, a flat portion 121 of the first semiconductor layer 120 is formed on the substrate 110, and one side of the flat portion 121 away from the substrate 110 is a plane;

[0067] Step S12: As shown in FIG. 4(b), an isolation layer 130 is formed on the flat portion 121 of the first semiconductor layer 120, and a plurality of first through holes 131 are formed in the isolation layer 130;

[0068] Step S13: As shown in FIG. 4(c), through the second epitaxial growth, the first semiconductor layer 120 continues to grow in the first through holes 131 of the isolation layer 130 and on the isolation layer 130 until one side of the first semiconductor layer 120 away from the substrate 110 grows into a plane. The portion of the first semiconductor layer 120 located in the first through holes 131 of the isolation layer 130 is the first protrusion 122 of the first semiconductor layer 120;

[0069] Step S14: As shown in FIG. 4(d), the side of the first semiconductor layer 120 away from the substrate 110 is etched until the isolation layer 130 is exposed, forming the second protrusion 123 of the first semiconductor layer 120.

[0070] However, it is not limited to this. By adjusting the growth parameters of the first semiconductor layer 120, the first protrusion 122 of the first semiconductor layer 120 can also be formed only in the first through holes 131 of the isolation layer 130 through the action of a mask, and the second protrusion 123 with an inclined sidewall can be directly grown on the first protrusion 122 without the etching step.

[0071] In step S20, as shown in FIG. 4(e), through selective growth, an active layer 140 is formed on the second protrusion 123 of the first semiconductor layer 120, so that the active layer 140 is only formed on the surface of the second protrusion 123 to achieve the effect that the side of the active layer 140 is also inclined. In addition, through selective growth, the sidewall non-radiative recombination caused by ICP etching in the conventional process can be effectively avoided.

[0072] In step S30, as shown in FIG. 4(f), through selective growth, a second semiconductor layer 150 having a conductivity type opposite to that of the first semiconductor layer 120 is formed on the active layer 140, so that the second semiconductor layer 150 is only formed on the surface of the active layer 140 to achieve the effect that the side of the second semiconductor layer 150 is also inclined.

[0073] In step S40, as shown in FIG. 4(g), a first electrode 160 is formed on the second semiconductor layer 150 by selective growth, such that the first electrode 160 is formed only on the surface of the second semiconductor layer 150, so as to achieve the effect that the side surface of the first electrode 160 is also an inclined surface.

[0074] Embodiment 2

[0075] As Figure 5 shown, this embodiment provides a light-emitting component, which includes the semiconductor structure 100 in Embodiment 1. The light-emitting component in this embodiment further includes a circuit board 200, a reflective layer 500, and a wavelength conversion medium layer 300.

[0076] The circuit board 200 is provided with a first pad 210 and a second pad 220. The first electrode 160 of the semiconductor structure 100 is connected to the first pad 210 on the circuit board 200, and the second electrode 170 of the semiconductor structure 100 is connected to the second pad 220 on the circuit board 200.

[0077] A plurality of third through-holes 111 are formed on the side of the substrate 110 away from the first semiconductor layer 120, and the third through-holes 111 correspond to the first through-holes 131 one by one. Preferably, the side wall 1111 of the third through-hole is an inclined surface to further improve the light extraction efficiency.

[0078] The reflective layer 500 is disposed on the side wall 1111 of the third through-hole to further improve the light extraction efficiency.

[0079] The wavelength conversion medium layer 300 is disposed in at least one of the third through-holes 111. The wavelength conversion medium layer 300 includes a first wavelength conversion medium layer 300 and a second wavelength conversion medium layer 300, and the wavelengths converted by the first wavelength conversion medium layer 300 and the second wavelength conversion medium layer 300 are different. Specifically, it is set according to design requirements. For example, when the light emitted by the active layer 140 is blue light, a first wavelength conversion medium layer 300 capable of converting blue light into red light can be disposed in some of the third through-holes 111, a second wavelength conversion medium layer 300 capable of converting blue light into green light can be disposed in some of the third through-holes 111, and wavelength conversion medium layers are not disposed in some of the third through-holes 111, so as to still emit blue light.

[0080] In other embodiments, the reflective layer 500 may not be provided, and the wavelength conversion medium layer 300 may be directly disposed in the third through-holes 111.

[0081] As Figures 6(a) - 6(d) shown, another aspect of this embodiment further provides a manufacturing method of a light-emitting component for manufacturing the above-mentioned light-emitting component. The manufacturing method of the light-emitting component includes the manufacturing method of the semiconductor structure in Embodiment 1, and further includes:

[0082] S50: As shown in Fig. 6(a), the semiconductor structure 100 is mounted on the front side of the circuit board 200. The circuit board 200 is provided with a first pad 210 and a second pad 220. The first electrode 160 of the semiconductor structure 100 is connected to the first pad 210 on the circuit board 200, and the second electrode 170 of the semiconductor structure 100 is connected to the second pad 220 on the circuit board 200. Specifically, since the area of the first electrode 160 is relatively large, the first electrode 160 of the semiconductor structure 100 can be connected to the first pad 210 on the circuit board 200 through a conductive adhesive 400.

[0083] Before entering the next step, the substrate 110 can be thinned first to reduce the thickness of the overall device.

[0084] S60: As shown in Fig. 6(b), a plurality of third through-holes 111 are formed on the side of the substrate 110 away from the first semiconductor layer 120, and the third through-holes 111 correspond to the first through-holes 131 one by one; the side wall 1111 of the third through-hole can be set as an inclined surface to further improve the light extraction efficiency.

[0085] Before entering the next step, as shown in Fig. 6(c), a reflective layer 500 can be formed on the side wall 1111 of the third through-hole to further improve the light extraction efficiency.

[0086] S70: As shown in Fig. 6(d), a wavelength conversion medium layer 300 is formed in at least one of the third through-holes 111.

[0087] For the light-emitting device 1 and its manufacturing method of the present application, by setting the second semiconductor layer 150 as a conductive DBR structure, on the one hand, the conductive DBR structure serves as an essential part of the P-N junction in the light-emitting device 1, and on the other hand, the conductive DBR structure can form resonance for light of a suitable wavelength, thereby improving the light-emitting efficiency; at the same time, by setting the side wall of the epitaxial structure as an inclined surface, it can not only provide a certain reflection angle but also increase the area of the reflection surface, so that more light can be reflected to the light extraction surface, thereby improving the light extraction efficiency. It should be noted that by setting the side surface 1231 of the second protrusion of the first semiconductor layer 120 as an inclined surface, the side walls of the active layer 140, the second semiconductor layer 150, and the first electrode 160 formed on its outer surface are all inclined surfaces, so as to achieve the effect that the side wall of the final epitaxial structure is an inclined surface.

[0088] The above are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the scope of protection of the present application.

Claims

1. A semiconductor structure, characterized in that, The semiconductor structure includes: a substrate, a first semiconductor layer, an isolation layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode; the first semiconductor layer and the second semiconductor layer have opposite conduction types, and the second semiconductor layer is a conductive DBR structure; The conductive DBR structure is a porous conductive DBR structure, and the porous conductive DBR structure includes a first porous conductive layer and a second porous conductive layer. Among them, a plurality of first holes are formed in the first porous conductive layer, and a plurality of second holes are formed in the second porous conductive layer. The diameters of the first holes are different from those of the second holes; The first semiconductor layer includes a flat portion, a first protrusion, and a second protrusion stacked in sequence in the vertical direction. The flat portion is formed on the substrate, the isolation layer is formed on the flat portion and is provided with a plurality of first through holes in the vertical direction. The first protrusion is formed in the first through hole, the second protrusion is formed on the first protrusion, the second protrusion corresponds to the first through hole one by one, and the second protrusions are arranged at intervals. The side surface of the second protrusion is an inclined surface; The active layer, the second semiconductor layer, and the first electrode are sequentially stacked on the second protrusion of the first semiconductor layer; The isolation layer is further provided with a second through hole in the vertical direction, and the second electrode is formed in the second through hole and is connected to the first semiconductor layer.

2. The semiconductor structure according to claim 1, wherein, The porous conductive DBR structure includes an alternately stacked first porous conductive layer and second porous conductive layer formed after electrochemical etching.

3. The semiconductor structure according to claim 1, wherein The materials of the first porous conductive layer and the second porous conductive layer are gallium nitride-based materials.

4. The semiconductor structure according to claim 1, wherein, The included angle between the side surface of the second protrusion and the horizontal plane is a first included angle, and the degree range of the first included angle is 40 degrees - 70 degrees.

5. The semiconductor structure according to claim 4, wherein, The side wall of the first through hole is an inclined surface, and the inclination direction of the side wall of the first through hole is the same as the inclination direction of the side surface of the second protrusion.

6. The semiconductor structure according to claim 1, characterized in that The shape of the second protrusion is conical, frustum-shaped, pyramidal or frustum-shaped.

7. The semiconductor structure according to claim 1, characterized in that, A transparent electrode is further provided between the second semiconductor layer and the first electrode.

8. The semiconductor structure according to claim 1, wherein The material of the first semiconductor layer is a gallium nitride-based material.

9. A light-emitting device, characterized in that, The light-emitting device includes the semiconductor structure according to any one of claims 1 to 8, and the light-emitting device further includes a circuit board and a wavelength conversion medium layer; The circuit board is provided with a first pad and a second pad. The first electrode of the semiconductor structure is connected to the first pad on the circuit board, and the second electrode of the semiconductor structure is connected to the second pad on the circuit board; A plurality of third through holes are formed on the surface of the substrate away from the first semiconductor layer, the third through holes correspond to the first through holes one by one, and the wavelength conversion medium layer is disposed in at least one of the third through holes.

10. The light-emitting device according to claim 9, characterized in that, The side wall of the third through hole is an inclined surface.

11. The light-emitting device according to claim 9, characterized in that, The light-emitting device further includes a reflective layer, and the reflective layer is coated on the side wall of the third through hole.

12. A method for fabricating a semiconductor structure, characterized in that For manufacturing the semiconductor structure according to any one of claims 1 to 8, the manufacturing method of the semiconductor structure includes the following steps: S1: Form a flat portion of the first semiconductor layer on the substrate; form the isolation layer on the flat portion of the first semiconductor layer, form a plurality of the first through-holes on the isolation layer; form a first protrusion portion of the first semiconductor layer in the first through-hole of the isolation layer, and form a second protrusion portion of the first semiconductor layer on the first protrusion portion; S2: Form an active layer on the second protrusion portion of the first semiconductor layer; S3: Form the second semiconductor layer with a conductivity type opposite to that of the first semiconductor layer on the active layer; S4: Form the first electrode on the second semiconductor layer; form the second through-hole on the isolation layer, and form the second electrode connected to the first semiconductor layer in the second through-hole to form the semiconductor structure.

13. The manufacturing method of the semiconductor structure according to claim 12, wherein, In step S2, an active layer is formed on the second protrusion portion of the first semiconductor layer by selective growth; In step S3, the second semiconductor layer with a conductivity type opposite to that of the first semiconductor layer is formed on the active layer by selective growth; In step S4, the first electrode is formed on the second semiconductor layer by selective growth.

14. A method for manufacturing a light-emitting device, characterized in that, The manufacturing method of the light-emitting device includes the manufacturing method of the semiconductor structure according to claim 12 or 13, and the manufacturing method of the light-emitting device further includes: S5: Mount the semiconductor structure on the front surface of the circuit board. The circuit board is provided with a first pad and a second pad. Connect the first electrode of the semiconductor structure to the first pad on the circuit board, and connect the second electrode of the semiconductor structure to the second pad on the circuit board; S6: Open a plurality of third through-holes on the side of the substrate away from the first semiconductor layer. The third through-holes correspond to the first through-holes one by one; S7: Form a wavelength conversion medium layer in at least one of the third through-holes.

15. The method for manufacturing a light-emitting device according to claim 14, characterized in that, The side wall of the third through-hole is an inclined surface.

16. The manufacturing method of the light-emitting device according to claim 15, wherein, After step S6 and before step S7, it further includes: Form a reflective layer on the side wall of the third through-hole.

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