Evaporation apparatus and evaporation method

Abstract

This invention relates to a vapor deposition apparatus and a vapor deposition method. According to one embodiment, the vapor deposition apparatus includes: a stage, a vapor deposition head opposite the stage, and a chamber. The chamber houses the stage and the vapor deposition head. The vapor deposition head includes a vapor deposition source, a nozzle, a control plate, and a moving mechanism. The vapor deposition source heats a material to generate vapor. The nozzle is connected to the vapor deposition source and ejects the vapor generated by the vapor deposition source toward the stage. The control plate has a sleeve surrounding the nozzle. The moving mechanism moves the control plate along the extension direction of the sleeve.

Description

[0001] Cross-referencing of related applications

[0002] This application claims priority based on Japanese Patent Application No. 2022-003107, filed on January 12, 2022, and incorporates all the contents of that Japanese application. Technical Field

[0003] The embodiments of the present invention relate to vapor deposition apparatus and vapor deposition method. Background Technology

[0004] In recent years, display devices using organic light-emitting diodes (OLEDs) as display elements have been put into practical use. These display elements include pixel circuits containing thin-film transistors, a lower electrode connected to the pixel circuits, an organic layer covering the lower electrode, and a top electrode covering the organic layer. In addition to the light-emitting layer, the organic layer also includes functional layers such as a hole transport layer and an electron transport layer.

[0005] For example, when using a mask to deposit an organic layer, a fine mask with openings corresponding to each pixel is applied. However, due to factors such as the processing precision of the fine mask and deformation of the opening shape, the formation accuracy of the thin film formed by evaporation may be reduced. Therefore, a technique is needed to form a thin film in the desired area without using a fine mask. Summary of the Invention

[0006] The purpose of this implementation is to provide a vapor deposition apparatus and a vapor deposition method capable of controlling the vapor deposition angle.

[0007] According to one embodiment, the vapor deposition apparatus includes:

[0008] A mounting stage; a vapor deposition head opposite the mounting stage; and a chamber that houses the mounting stage and the vapor deposition head, the vapor deposition head comprising: a vapor deposition source for heating a material to generate vapor; a nozzle connected to the vapor deposition source for spraying vapor generated by the vapor deposition source toward the mounting stage; a control plate having a sleeve surrounding the nozzle; and a moving mechanism for moving the control plate along the extension direction of the sleeve.

[0009] According to one embodiment, the vapor deposition apparatus includes:

[0010] A first vapor deposition head is configured to vapor deposit a first material on a processing substrate; and a second vapor deposition head is configured to vapor deposit a second material on the processing substrate on which the first material is vapor deposited. Each of the first and second vapor deposition heads includes: a vapor deposition source for heating the material to generate vapor; a nozzle connected to the vapor deposition source for ejecting vapor generated by the vapor deposition source toward the processing substrate; and a sleeve surrounding the nozzle and extending toward the processing substrate further than the tip of the nozzle. The distance from the tip of the nozzle to the tip of the sleeve in the second vapor deposition head is less than the distance from the tip of the nozzle to the tip of the sleeve in the first vapor deposition head.

[0011] According to one embodiment, in the vapor deposition method:

[0012] A processing substrate is prepared having a lower electrode, a rib having an opening overlapping the lower electrode, and a partition wall formed on the substrate. The partition wall includes a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from the side of the lower portion. A sleeve surrounding a nozzle of a first vapor deposition head is positioned at a first position. Vapor of a first material is ejected from the first vapor deposition head, and the first material is vapor-deposited on the processing substrate. A sleeve surrounding a nozzle of a second vapor deposition head is positioned at a second position further away from the processing substrate than the first position. Vapor of a second material is ejected from the second vapor deposition head, and the second material is vapor-deposited on the processing substrate on which the first material is vapor-deposited.

[0013] According to the embodiments, it is possible to provide a vapor deposition apparatus and a vapor deposition method that can control the vapor deposition angle. Attached Figure Description

[0014] Figure 1 This is a diagram illustrating an example of the configuration of a display device DSP.

[0015] Figure 2 This is a diagram showing an example of the layout of sub-pixels SP1, SP2, and SP3.

[0016] Figure 3 It is along Figure 2 A schematic cross-sectional view of the display device DSP on line III-III.

[0017] Figure 4 This is a diagram showing an example of the configuration of the display element 20.

[0018] Figure 5 This is an example diagram used to illustrate a manufacturing method for a display device DSP.

[0019] Figure 6 It is used for explanation Figure 5 The diagram shows the vapor deposition process of the first thin film.

[0020] Figure 7 This is a diagram showing an example of the vapor deposition apparatus 100 of this embodiment.

[0021] Figure 8 This is an exploded perspective view of the main parts of the vapor deposition head 120.

[0022] Figure 9 This is a diagram illustrating an example of the vapor deposition apparatus and vapor deposition method of this embodiment.

[0023] Figure 10 This is a diagram used to illustrate the deposition angle when depositing the first thin film. Detailed Implementation

[0024] One embodiment is described with reference to the accompanying drawings.

[0025] The disclosed example is merely one instance, and appropriate modifications that can be readily conceived by those skilled in the art without departing from the spirit of the invention are naturally included within the scope of this invention. Furthermore, the accompanying drawings are for the purpose of making the description clearer; the width, thickness, shape, etc., of each part may be schematically shown compared to the actual form, but this is merely an example and not a limitation on the interpretation of the invention. Additionally, in this specification and the various figures, for constituent elements that perform the same or similar functions as those described with respect to the already presented figures, there are instances where the same reference numerals are used and repeated detailed descriptions are appropriately omitted.

[0026] It should be noted that, for ease of understanding, mutually orthogonal X-axis, Y-axis, and Z-axis are shown in the accompanying drawings. The direction along the X-axis is referred to as the first direction, the direction along the Y-axis as the second direction, and the direction along the Z-axis as the third direction. The observation of various elements parallel to the third direction Z is called a top-down view.

[0027] The display device of this embodiment is an organic electroluminescent display device that includes an organic light-emitting diode (OLED) as a display element, and can be mounted on televisions, personal computers, in-vehicle devices, tablet computers, smartphones, mobile phones, etc.

[0028] Figure 1 This is a diagram illustrating an example of the configuration of a display device DSP.

[0029] The display device DSP has a display area DA for displaying images and a peripheral area SA surrounding the display area DA on an insulating substrate 10. The substrate 10 can be glass or a flexible resin film.

[0030] In this embodiment, the substrate 10 viewed from above has a rectangular shape. However, the shape of the substrate 10 viewed from above is not limited to a rectangle; it can also be other shapes such as a square, a circle, or an ellipse.

[0031] The display area DA has multiple pixels PX arranged in a matrix along the first direction X and the second direction Y. Pixel PX contains multiple sub-pixels SP. In one example, pixel PX contains a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3. It should be noted that pixel PX may also contain sub-pixels SP of other colors, such as white, along with or in place of any of the sub-pixels SP1, SP2, and SP3.

[0032] The sub-pixel SP includes a pixel circuit 1 and a display element 20 driven by the pixel circuit 1. The pixel circuit 1 includes a pixel switch 2, a driving transistor 3, and a capacitor 4. The pixel switch 2 and the driving transistor 3 are switching elements made of, for example, thin-film transistors.

[0033] The gate electrode of pixel switch 2 is connected to scan line GL. One of the source and drain electrodes of pixel switch 2 is connected to signal line SL, and the other is connected to the gate electrode of driving transistor 3 and capacitor 4. In driving transistor 3, one of the source and drain electrodes is connected to power line PL and capacitor 4, and the other is connected to the anode of display element 20.

[0034] It should be noted that the configuration of pixel circuit 1 is not limited to the example shown in the figure. For example, pixel circuit 1 may also have more thin-film transistors and capacitors.

[0035] Display element 20 is an organic light-emitting diode (OLED), sometimes referred to as an organic EL element, which serves as a light-emitting element. For example, sub-pixel SP1 has a display element 20 that emits light in the red wavelength region, sub-pixel SP2 has a display element 20 that emits light in the green wavelength region, and sub-pixel SP3 has a display element 20 that emits light in the blue wavelength region.

[0036] Figure 2 This is a diagram showing an example of the layout of sub-pixels SP1, SP2, and SP3.

[0037] exist Figure 2 In the example, sub-pixels SP1 and SP2 are arranged in the second direction Y. Furthermore, sub-pixels SP1 and SP2 are arranged with sub-pixel SP3 in the first direction X.

[0038] With sub-pixels SP1, SP2, and SP3 arranged in this layout, a column of sub-pixels SP1 and SP2 alternately arranged in the second direction Y, and a column of multiple sub-pixels SP3 repeatedly arranged in the second direction Y, are formed in the display area DA. These columns are alternately arranged in the first direction X.

[0039] It should be noted that the layout of sub-pixels SP1, SP2, and SP3 is not limited to... Figure 2For example, the sub-pixels SP1, SP2, and SP3 in each pixel PX can also be arranged sequentially in the first direction X.

[0040] The display area DA is provided with ribs 5 and partitions 6. Ribs 5 have openings AP1, AP2, and AP3 at sub-pixels SP1, SP2, and SP3, respectively. Figure 2 In the example, opening AP2 is larger than opening AP1, and opening AP3 is larger than opening AP2.

[0041] When viewed from above, the partition 6 overlaps with the rib 5. The partition 6 has a plurality of first partitions 6x extending along a first direction X and a plurality of second partitions 6y extending along a second direction Y. The plurality of first partitions 6x are respectively disposed between adjacent openings AP1 and AP2 in the second direction Y and between two adjacent openings AP3 in the second direction Y. The second partitions 6y are respectively disposed between adjacent openings AP1 and AP3 in the first direction X and between adjacent openings AP2 and AP3 in the first direction X.

[0042] exist Figure 2 In the example, the first partition 6x and the second partition 6y are interconnected. Thus, the partition 6 as a whole is formed as a lattice surrounding the openings AP1, AP2, and AP3. The partition 6 can also have openings in the sub-pixels SP1, SP2, and SP3, just like the ribs 5.

[0043] Sub-pixel SP1 has a lower electrode LE1, an upper electrode UE1, and an organic layer OR1 that overlap with opening AP1. Sub-pixel SP2 has a lower electrode LE2, an upper electrode UE2, and an organic layer OR2 that overlap with opening AP2. Sub-pixel SP3 has a lower electrode LE3, an upper electrode UE3, and an organic layer OR3 that overlap with opening AP3.

[0044] exist Figure 2 In the example, the shapes of the lower electrodes LE1, LE2, and LE3 are represented by dashed lines, while the shapes of the organic layers OR1, OR2, and OR3 and the upper electrodes UE1, UE2, and UE3 are represented by dashed lines. The periphery of each of the lower electrodes LE1, LE2, and LE3 overlaps with the rib 5. The shape of the upper electrode UE1 is roughly the same as that of the organic layer OR1, and the periphery of both the upper electrode UE1 and the organic layer OR1 overlaps with the partition wall 6. The shape of the upper electrode UE2 is roughly the same as that of the organic layer OR2, and the periphery of both the upper electrode UE2 and the organic layer OR2 overlaps with the partition wall 6. The shape of the upper electrode UE3 is roughly the same as that of the organic layer OR3, and the periphery of both the upper electrode UE3 and the organic layer OR3 overlaps with the partition wall 6.

[0045] The lower electrode LE1, the upper electrode UE1, and the organic layer OR1 constitute the display element 20 of sub-pixel SP1. The lower electrode LE2, the upper electrode UE2, and the organic layer OR2 constitute the display element 20 of sub-pixel SP2. The lower electrode LE3, the upper electrode UE3, and the organic layer OR3 constitute the display element 20 of sub-pixel SP3. The lower electrodes LE1, LE2, and LE3 correspond, for example, to the anode of the display element 20. The upper electrodes UE1, UE2, and UE3 correspond to the cathode or common electrode of the display element 20.

[0046] The lower electrode LE1 is connected to the pixel circuit 1 of the sub-pixel SP1 via the contact hole CH1 (see [link]). Figure 1 The lower electrode LE2 is connected to the pixel circuit 1 of sub-pixel SP2 through contact hole CH2. The lower electrode LE3 is connected to the pixel circuit 1 of sub-pixel SP3 through contact hole CH3.

[0047] Figure 3 It is along Figure 2 A schematic cross-sectional view of the display device DSP on line III-III.

[0048] A circuit layer 11 is disposed on the substrate 10. The circuit layer 11 includes... Figure 1 The diagram shows various circuits and wiring, including pixel circuit 1, scan line GL, signal line SL, and power line PL. Circuit layer 11 is covered by insulating layer 12. Insulating layer 12 functions as a planarization film to flatten the unevenness created by circuit layer 11.

[0049] The lower electrodes LE1, LE2, and LE3 are disposed on the insulating layer 12. Ribs 5 are disposed on the insulating layer 12 and the lower electrodes LE1, LE2, and LE3. The ends of the lower electrodes LE1, LE2, and LE3 are covered by the ribs 5.

[0050] The partition 6 includes a lower portion 61 disposed above the rib 5 and an upper portion 62 covering the upper surface of the lower portion 61. The upper portion 62 has a wider width than the lower portion 61. Therefore, in Figure 3 In the middle, the two ends of the upper part 62 protrude beyond the sides of the lower part 61. Such a shape of the partition 6 can also be called cantilevered.

[0051] Figure 2 The organic layer OR1 shown comprises a first organic layer OR1a and a second organic layer OR1b that are separated from each other. Additionally, Figure 2 The upper electrode UE1 shown includes a first upper electrode UE1a and a second upper electrode UE1b that are separated from each other. Figure 3As shown, the first organic layer OR1a contacts the lower electrode LE1 through the opening AP1, and covers the lower electrode LE1 and a portion of the rib 5. The second organic layer OR1b is located above the upper portion 62. The first upper electrode UE1a is opposite to the lower electrode LE1 and covers the first organic layer OR1a. Furthermore, the first upper electrode UE1a contacts the side of the lower portion 61. The second upper electrode UE1b is located above the partition wall 6 and covers the second organic layer OR1b.

[0052] Figure 2 The organic layer OR2 shown comprises a first organic layer OR2a and a second organic layer OR2b that are separated from each other. Additionally, Figure 2 The upper electrode UE2 shown includes a first upper electrode UE2a and a second upper electrode UE2b that are separated from each other. For example... Figure 3 As shown, the first organic layer OR2a contacts the lower electrode LE2 through the opening AP2, and covers the lower electrode LE2 and a portion of the rib 5. The second organic layer OR2b is located above the upper portion 62. The first upper electrode UE2a is opposite to the lower electrode LE2 and covers the first organic layer OR2a. Furthermore, the first upper electrode UE2a contacts the side of the lower portion 61. The second upper electrode UE2b is located above the partition wall 6 and covers the second organic layer OR2b.

[0053] Figure 2 The organic layer OR3 shown comprises a first organic layer OR3a and a second organic layer OR3b that are separated from each other. Additionally, Figure 2 The upper electrode UE3 shown includes a first upper electrode UE3a and a second upper electrode UE3b that are separated from each other. For example... Figure 3 As shown, the first organic layer OR3a contacts the lower electrode LE3 through the opening AP3, and covers the lower electrode LE3 and a portion of the rib 5. The second organic layer OR3b is located above the upper portion 62. The first upper electrode UE3a is opposite to the lower electrode LE3 and covers the first organic layer OR3a. Furthermore, the first upper electrode UE3a contacts the side of the lower portion 61. The second upper electrode UE3b is located above the partition wall 6 and covers the second organic layer OR3b.

[0054] Encapsulation layers 71, 72, and 73 are respectively disposed on sub-pixels SP1, SP2, and SP3. Encapsulation layer 71 continuously covers the first upper electrode UE1a, the side surface of the lower part 61, and the second upper electrode UE1b. Encapsulation layer 72 continuously covers the first upper electrode UE2a, the side surface of the lower part 61, and the second upper electrode UE2b. Encapsulation layer 73 continuously covers the first upper electrode UE3a, the side surface of the lower part 61, and the second upper electrode UE3b.

[0055] exist Figure 3In the example, the second organic layer OR1b, the second upper electrode UE1b, and the sealing layer 71 on the partition 6 between sub-pixels SP1 and SP3 are separated from the second organic layer OR3b, the second upper electrode UE3b, and the sealing layer 73 on the partition 6. Additionally, the second organic layer OR2b, the second upper electrode UE2b, and the sealing layer 72 on the partition 6 between sub-pixels SP2 and SP3 are separated from the second organic layer OR3b, the second upper electrode UE3b, and the sealing layer 73 on the partition 6.

[0056] Sealing layers 71, 72, and 73 are covered by resin layer 13. Resin layer 13 is covered by sealing layer 14. Furthermore, sealing layer 14 is covered by resin layer 15.

[0057] The insulating layer 12 is formed of an organic material. The ribs 5 and the sealing layers 14, 71, 72, and 73 are formed of inorganic materials such as silicon nitride (SiNx). The thickness of the ribs 5, formed of inorganic materials, is sufficiently small compared to the thickness of the partition wall 6 and the insulating layer 12. In one example, the thickness of the ribs 5 is more than 200 nm and less than 400 nm.

[0058] The lower part 61 of the partition 6 is conductive. The upper part 62 of the partition 6 may also be conductive.

[0059] The lower electrodes LE1, LE2, and LE3 can be formed from transparent conductive materials such as ITO, or they can have a stacked structure of metallic materials such as silver (Ag) and transparent conductive materials. The upper electrodes UE1, UE2, and UE3 are formed from metallic materials such as magnesium and silver alloys (MgAg). The upper electrodes UE1, UE2, and UE3 can also be formed from transparent conductive materials such as ITO.

[0060] When the potentials of the lower electrodes LE1, LE2, and LE3 are relatively higher than those of the upper electrodes UE1, UE2, and UE3, the lower electrodes LE1, LE2, and LE3 are equivalent to the anode, and the upper electrodes UE1, UE2, and UE3 are equivalent to the cathode. Conversely, when the potentials of the upper electrodes UE1, UE2, and UE3 are relatively higher than those of the lower electrodes LE1, LE2, and LE3, the upper electrodes UE1, UE2, and UE3 are equivalent to the anode, and the lower electrodes LE1, LE2, and LE3 are equivalent to the cathode.

[0061] The organic layers OR1, OR2, and OR3 contain multiple functional layers and a light-emitting layer.

[0062] Subpixels SP1, SP2, and SP3 may further include cap layers for adjusting the optical properties of the light emitted by the light-emitting layers of organic layers OR1, OR2, and OR3. Such cap layers may also be disposed between the upper electrode UE1 and the sealing layer 71, between the upper electrode UE2 and the sealing layer 72, and between the upper electrode UE3 and the sealing layer 73, respectively.

[0063] The partition 6 is supplied with a common voltage. This common voltage is supplied to the first upper electrodes UE1a, UE2a, and UE3a, which are in contact with the side of the lower part 61. The lower electrodes LE1, LE2, and LE3 are supplied with pixel voltages via the pixel circuits 1 of each sub-pixel SP1, SP2, and SP3.

[0064] If a potential difference is formed between the lower electrode LE1 and the upper electrode UE1, the light-emitting layer of the first organic layer OR1a emits light in the red wavelength region. If a potential difference is formed between the lower electrode LE2 and the upper electrode UE2, the light-emitting layer of the first organic layer OR2a emits light in the green wavelength region. If a potential difference is formed between the lower electrode LE3 and the upper electrode UE3, the light-emitting layer of the first organic layer OR3a emits light in the blue wavelength region.

[0065] As another example, the light-emitting layers of organic layers OR1, OR2, and OR3 can also emit light of the same color (e.g., white). In this case, the display device DSP can also include a color filter for converting the light emitted by the light-emitting layers into light corresponding to the colors of the sub-pixels SP1, SP2, and SP3. Alternatively, the display device DSP can also include a layer containing quantum dots, wherein the quantum dots are excited by the light emitted by the light-emitting layers to generate light of the colors corresponding to the sub-pixels SP1, SP2, and SP3.

[0066] Figure 4 This is a diagram showing an example of the configuration of the display element 20.

[0067] Figure 4 The lower electrode LE shown is Figure 3 The lower electrodes LE1, LE2, and LE3 are respectively equivalent. Figure 4 The organic layer OR shown Figure 3 The organic layers OR1, OR2, and OR3 are each equivalent. Figure 4 The upper electrode UE shown is Figure 3 The upper electrodes UE1, UE2, and UE3 are respectively equivalent.

[0068] The organic layer OR has a carrier adjustment layer CA1, a light-emitting layer EM, and a carrier adjustment layer CA2. The carrier adjustment layer CA1 is located between the lower electrode LE and the light-emitting layer EM, and the carrier adjustment layer CA2 is located between the light-emitting layer EM and the upper electrode UE. The carrier adjustment layers CA1 and CA2 contain multiple functional layers. The following explanation uses the case where the lower electrode LE corresponds to the anode and the upper electrode UE corresponds to the cathode as an example.

[0069] The carrier adjustment layer CA1, as a functional layer, includes a hole injection layer F11, a hole transport layer F12, and an electron blocking layer F13. The hole injection layer F11 is disposed above the lower electrode LE, the hole transport layer F12 is disposed above the hole injection layer F11, the electron blocking layer F13 is disposed above the hole transport layer F12, and the light-emitting layer EM is disposed above the electron blocking layer F13.

[0070] The carrier adjustment layer CA2, as a functional layer, includes a hole blocking layer F21, an electron transport layer F22, and an electron injection layer F23. The hole blocking layer F21 is disposed above the light-emitting layer EM, the electron transport layer F22 is disposed above the hole blocking layer F21, the electron injection layer F23 is disposed above the electron transport layer F22, and the upper electrode UE is disposed above the electron injection layer F23.

[0071] It should be noted that, in addition to the above-mentioned functional layers, the carrier adjustment layers CA1 and CA2 may also include other functional layers such as the carrier generation layer as needed, and at least one of the above-mentioned functional layers may be omitted.

[0072] Figure 5 This is an example diagram used to illustrate a manufacturing method for a display device DSP.

[0073] The manufacturing method shown here generally includes a process of preparing a processing substrate as the base for each sub-pixel SP1, SP2, SP3 (step ST1) and a process of forming the first sub-pixel (step ST2). It should be noted that the first sub-pixel here is any one of sub-pixels SP1, SP2, and SP3.

[0074] First, in step ST1, a processing substrate SUB is prepared on the substrate 10, which has a lower electrode LE, a rib 5 having an opening AP that overlaps with the lower electrode LE, a lower portion 61 disposed on the rib 5, and an upper portion 62 disposed on the lower portion 61 and protruding from the side of the lower portion 61.

[0075] Next, in step ST2, a first thin film is first deposited on the processing substrate SUB (step ST21). The deposition process of the first thin film will be described later. Then, a resist patterned into a predetermined shape is formed on the first thin film (step ST22). Then, the first thin film is etched using the resist as a mask (step ST23). Then, the resist is removed (step ST24). Thus, a first sub-pixel having a first thin film with a predetermined shape is formed.

[0076] Figure 6 It is used for explanation Figure 5 The diagram shows the vapor deposition process of the first thin film. The first thin film illustrated here has an organic layer OR, an upper electrode UE, and a sealing layer 7. Furthermore, the organic layer OR has… Figure 4The multiple functional layers shown.

[0077] First, a material for forming the hole injection layer F11 is deposited on the processing substrate SUB (step ST211). This forms the hole injection layer F11, which is in contact with the lower electrode LE. The lower electrode LE here corresponds to any one of the lower electrodes LE1, LE2, and LE3 described above.

[0078] Then, a material for forming the hole transport layer F12 is deposited on the hole injection layer F11 (step ST212). Thus, the hole transport layer F12, which is in contact with the hole injection layer F11, is formed.

[0079] Then, a material for forming the electron blocking layer F13 is deposited on the hole transport layer F12 (step ST213). Thus, the electron blocking layer F13 in contact with the hole transport layer F12 is formed.

[0080] Then, a material for forming the light-emitting layer EM is deposited on the electron blocking layer F13 (step ST214). Thus, the light-emitting layer EM in contact with the electron blocking layer F13 is formed.

[0081] Then, a material for forming the hole blocking layer F21 is deposited on the light-emitting layer EM (step ST215). Thus, the hole blocking layer F21 in contact with the light-emitting layer EM is formed.

[0082] Then, a material for forming the electron transport layer F22 is deposited on the hole blocking layer F21 (step ST216). Thus, the electron transport layer F22, which is in contact with the hole blocking layer F21, is formed.

[0083] Then, a material for forming the electron injection layer F23 is deposited on the electron transport layer F22 (step ST217). Thus, the electron injection layer F23, which is in contact with the electron transport layer F22, is formed. An organic layer OR is formed through a series of steps from ST211 to ST217. The organic layer OR here is equivalent to any of the aforementioned organic layers OR1, OR2, and OR3.

[0084] Then, the material for forming the upper electrode UE is deposited on the electron injection layer F23 (step ST218). Thus, an upper electrode UE is formed that is in contact with the electron injection layer F23 and the lower part 61 of the partition wall 6, and is covered with an organic layer OR. This upper electrode UE is equivalent to any of the upper electrodes UE1, UE2, and UE3 described above.

[0085] Then, a sealing layer 7 is formed covering the upper electrode UE and the partition 6 (step ST219). The sealing layer 7 here is equivalent to any of the sealing layers 71, 72, and 73 mentioned above.

[0086] It should be noted that a transparent capping layer (optical adjustment layer) may also be deposited before forming the sealing layer 7. Additionally, at least one of steps ST211 to ST213 and at least one of steps ST215 to ST217 may be omitted. Furthermore, in addition to steps ST211 to ST217, a step for forming a functional layer constituting the organic layer may be added.

[0087] Next, an example of a vapor deposition apparatus 100 that can be used in the above-described vapor deposition process will be described.

[0088] Figure 7 This is a diagram showing an example of the vapor deposition apparatus 100 of this embodiment.

[0089] The vapor deposition apparatus 100 includes a stage 110 for arranging the processing substrate SUB, a vapor deposition head 120 opposite to the stage 110, a drive mechanism 130 for driving the vapor deposition head 120, and a chamber 140. The chamber 140 is configured to accommodate the stage 110, the vapor deposition head 120, the drive mechanism 130, etc., and is capable of being vacuumed inside.

[0090] For example, in the formation Figure 2 In the case of sub-pixels SP1, SP2, and SP3 in the layout shown, the vapor deposition head 120 is positioned opposite the stage 110 in the third direction Z. The drive mechanism 130 includes a scanning mechanism that moves the vapor deposition head 120, which ejects vapor, along the second direction Y, and a moving mechanism that moves the vapor deposition head 120 in the first direction X.

[0091] The vapor deposition head 120 includes a vapor deposition source 121, multiple nozzles 122, a control board 123, and a moving mechanism 125.

[0092] The vapor deposition source 121 is configured to heat the material to generate vapor. The vapor deposition source 121 has a bottom surface 121A on the side opposite to the stage 110 in the third direction Z. The material to be heated is either a material used to form an organic layer or a material used to form an upper electrode.

[0093] Multiple nozzles 122 are arranged in the first direction X and connected to the bottom surface 121A of the vapor deposition source 121, extending from the bottom surface 121A toward the stage 110 in the third direction Z. These multiple nozzles 122 are configured to spray vapor generated by the vapor deposition source 121 toward the stage 110 (or the processing substrate SUB above the stage 110).

[0094] The control plate 123 has an upper surface 123A opposite to the bottom surface 121A in the third direction Z. The control plate 123 includes a plurality of sleeves 124. The plurality of sleeves 124 are formed corresponding to a plurality of nozzles 122 and extend toward the stage 110 in the third direction Z. Each of the sleeves 124 is arranged to surround the nozzle 122. Such sleeves 124 restrict the vapor ejected from the vapor deposition head 120 toward the processed substrate SUB. Hereinafter, the spread angle of the vapor ejected from the vapor deposition head 120 toward the processed substrate SUB via the sleeves 124 will be referred to as the vapor deposition angle.

[0095] The moving mechanism 125 is configured to move the control plate 123 along the extending direction of the sleeve 124. That is, in the illustrated example, the moving mechanism 125 is capable of moving the control plate 123 along the third direction Z.

[0096] For example, in the first mode (narrow evaporation angle mode) where the evaporation angle of the vapor ejected from the evaporation head 120 is the first angle, the moving mechanism 125 is in Figure 7 The control panel 123 is positioned at position P1, shown in solid line. Furthermore, in the second mode (wide evaporation angle mode) where the evaporation angle of the vapor ejected from the evaporation head 120 is greater than the first angle, the moving mechanism 125... Figure 7 The control panel 123 is positioned at the second position P2, indicated by a dashed line. The second position P2 is closer to the vapor deposition source 121 than the first position P1. It should be noted that the moving mechanism 125 is not limited to... Figure 7 The example shown can also be configured in other positions different from the first position P1 and the second position P2.

[0097] The portion of nozzle 122 closest to the mounting stage 110 is referred to as the front end 122T of nozzle 122, and the portion of sleeve 124 closest to the mounting stage 110 is referred to as the front end 124T of sleeve 124. In this case, regarding the distance D along the third direction Z from the front end 122T of nozzle 122 to the front end 124T of sleeve 124, the distance Db of the second mode is less than the distance Da of the first mode.

[0098] Furthermore, regarding the distance G along the third direction Z between the bottom surface 121A of the vapor deposition source 121 and the upper surface 123A of the control plate 123, the distance Gb of the second mode is smaller than the distance Ga of the first mode.

[0099] By controlling the position of the control plate 123 via the moving mechanism 125, the distance D and interval G can be freely set. A larger distance D or interval G results in the vapor ejected from the nozzle 122 being more restricted by the sleeve 124, leading to higher vapor flow and a smaller deposition angle. Conversely, a smaller distance D or interval G results in the vapor ejected from the nozzle 122 being less restricted by the sleeve 124, leading to higher vapor dispersion and a larger deposition angle. In this way, the deposition angle of the vapor ejected from the deposition head 120 toward the processed substrate SUB can be freely controlled by controlling the position of the control plate 123.

[0100] Figure 8 This is an exploded perspective view of the main parts of the vapor deposition head 120.

[0101] In the vapor deposition head 120, the nozzle 122 is formed into a cylindrical shape extending along the third direction Z. A plurality of nozzles 122 are arranged at equal intervals in the first direction X.

[0102] In the control plate 123, the sleeve 124 is formed as a cylinder extending along the third direction Z. The inner diameter of the sleeve 124 is larger than the outer diameter of the nozzle 122. A plurality of sleeves 124 are arranged at equal intervals in the first direction X. The spacing between the sleeves 124 is equal to the spacing between the nozzles 122.

[0103] It should be noted that, in Figure 8 In the example shown, the vapor deposition head 120 has nozzles 122 arranged in a row in the first direction X, but it is not limited to this example; the vapor deposition head 120 may also have nozzles 122 arranged in multiple rows. When the vapor deposition head 120 has nozzles 122 arranged in multiple rows, the control plate 123 has sleeves 124 arranged in multiple rows.

[0104] Figure 9 This is a diagram illustrating an example of the vapor deposition apparatus and method of this embodiment. It should be noted that the plurality of chambers and the elements contained within the chambers shown here can be considered as one vapor deposition apparatus 100.

[0105] First, the processing substrate SUB is prepared. As described above, the processing substrate SUB has a lower electrode LE, a rib 5, and a partition 6 formed on the substrate 10.

[0106] Next, the processing substrate SUB is introduced into the chamber 1401 and placed on the stage 1101. The vapor deposition head 1201 housed in the chamber 1401 is configured to vapor deposit material M1 onto the processing substrate SUB. In the vapor deposition head 1201, under vacuum conditions, the control plate 1231 is moved by the moving mechanism 1251 to position the sleeve 1241 in the first position, and the distance D1 between the tip of the nozzle 1221 and the tip of the sleeve 1241 is set.

[0107] Furthermore, the vapor deposition head 1201 moves in the second direction Y while spraying vapor of material M1 toward the processing substrate SUB. At this time, a portion of the vapor ejected from the nozzle 1221 is blocked by the sleeve 1241. The vapor deposition head 1201 sprays vapor of material M1 at a deposition angle θ1. Thus, material M1 is deposited onto the processing substrate SUB.

[0108] Next, the processing substrate SUB is introduced into the chamber 1402 and placed on the stage 1102. The vapor deposition head 1202 housed in the chamber 1402 is configured to vapor deposit material M2 onto the processing substrate SUB, on which material M1 has been vapor-deposited. In the vapor deposition head 1202, under vacuum, the control plate 1232 is moved by the moving mechanism 1252 to position the sleeve 1242 at a second position further away from the processing substrate SUB than the first position, and a distance D2 is set between the tip of the nozzle 1222 and the tip of the sleeve 1242. Distance D2 is less than distance D1.

[0109] Then, the vapor deposition head 1202 moves along the second direction Y while spraying vapor of material M2 toward the processing substrate SUB. At this time, a portion of the vapor ejected from the nozzle 1222 is blocked by the sleeve 1242. The vapor deposition head 1202 sprays vapor of material M2 at a deposition angle θ2. The deposition angle θ2 is different from the deposition angle θ1, and is greater than the deposition angle θ1. As a result, material M2 is deposited on the processing substrate SUB. Material M2 is deposited over a wider area than material M1, thus covering material M1.

[0110] Next, the processing substrate SUB is introduced into chamber 1403 and placed on stage 1103. The vapor deposition head 1203 housed in chamber 1403 is configured to vapor deposit material M3 onto the processing substrate SUB, on which material M2 has been vapor-deposited. In the vapor deposition head 1203, under vacuum, the control plate 1233 is moved by the moving mechanism 1253 to position the sleeve 1243 at a third position further away from the processing substrate SUB than the second position, and the distance D3 between the tip of the nozzle 1223 and the tip of the sleeve 1243 is set. Distance D3 is less than distance D2.

[0111] Furthermore, the vapor deposition head 1203 moves in the second direction Y while ejecting vapor of material M3 toward the processing substrate SUB. At this time, a portion of the vapor ejected from the nozzle 1223 is blocked by the sleeve 1243. The vapor deposition head 1203 ejects the vapor of material M3 at a deposition angle θ3. The deposition angle θ3 differs from deposition angles θ1 and θ2, and is greater than them. Thus, material M3 is deposited onto the processing substrate SUB. Material M3 is deposited over a wider area than the previously deposited material M2, thus covering material M2.

[0112] It should be noted that, in Figure 9In the example shown, the extension direction of nozzle 1221 is parallel to the normal of stage 1101, the extension direction of nozzle 1222 is parallel to the normal of stage 1102, and the extension direction of nozzle 1223 is parallel to the normal of stage 1103.

[0113] In addition, the distance along the third direction Z from the mounting platform 1101 to the nozzle 1221, the distance along the third direction Z from the mounting platform 1102 to the nozzle 1222, and the distance along the third direction Z from the mounting platform 1103 to the nozzle 1223 are all the same, but they can also be different from each other.

[0114] Figure 10 This is a diagram used to illustrate the deposition angle when depositing the first thin film.

[0115] Here, the lower ORA layer, which includes multiple functional layers and light-emitting layers, and the upper ORB layer, which is located near the lower electrode LE, are shown. The lower ORA layer is, for example, the hole injection layer, hole transport layer, and light-emitting layer described above. The upper ORB layer is, for example, the electron injection layer, electron transport layer, and hole blocking layer described above.

[0116] The vapor deposition process using vapor deposition head 1201 and Figure 6 This corresponds to at least one of the steps in the vapor deposition process of the first thin film shown, such as steps ST211 to ST214.

[0117] The vapor deposition head 1201 moves in the second direction Y while ejecting vapor of material M1, thereby forming a lower ORA layer. At this time, a portion of the vapor directed towards the partition wall 6 at a deposition angle θ1 is blocked by the upper part 62. Therefore, the lower ORA layer, which is adjacent to the partition wall 6 in the second direction Y, is separated from the lower part 61 by the partition wall 6. Furthermore, the material M1 used to form the lower ORA layer is deposited on the upper part 62 of the partition wall 6. The deposition angle θ1, indicated by solid lines in the figure, is, for example, 55° to 65°.

[0118] The vapor deposition process using vapor deposition head 1202 and Figure 6 This is equivalent to at least one of the steps in the vapor deposition process of the first thin film shown, such as steps ST215 to ST217.

[0119] The vapor deposition head 1202 moves in the second direction Y while ejecting vapor of material M2, thereby forming the upper ORB layer. At this time, a portion of the vapor facing the partition wall 6 at a vapor deposition angle θ2 is blocked by the upper part 62. Therefore, the upper ORB layer adjacent to the partition wall 6 in the second direction Y is separated from the lower part 61 by the partition wall 6. In addition, material M2 for forming the upper ORB layer is vapor deposited on the upper part 62 of the partition wall 6. Since the vapor deposition angle θ2 is greater than the vapor deposition angle θ1, material M2 is vapor deposited over a wider range than material M1. Therefore, material M2 is also vapor deposited in a range closer to the partition wall 6 than material M1. Therefore, the lower ORA layer is covered by the upper ORB layer. The vapor deposition angle θ2, indicated by the dashed line in the figure, is, for example, 95° to 105°.

[0120] The vapor deposition process using vapor deposition head 1203 and Figure 6 The process is equivalent to, for example, step ST218 in the vapor deposition process of the first thin film shown.

[0121] The vapor deposition head 1203 moves in the second direction Y while ejecting vapor of material M3, thereby forming the upper electrode UE. At this time, although the vapor directed toward the partition wall 6 at a vapor deposition angle θ3 greater than the vapor deposition angle θ2 is blocked by the upper part 62, some of the vapor reaches the lower part 61. Therefore, the upper electrode UE, which is adjacent to the partition wall 6 in the second direction Y, is separated by the partition wall 6 but is in contact with the lower part 61. In addition, material M3 for forming the upper electrode UE is vapor deposited on the upper part 62 of the partition wall 6. Since material M3 is vapor deposited in a range closer to the partition wall 6 than material M2, the upper ORB layer is covered by the upper electrode UE. The vapor deposition angle θ3, indicated by a single-dotted line in the figure, is, for example, 115° to 125°.

[0122] Above rib 5, the lower ORA, upper ORB, and upper electrode UE have portions A, B, and C that respectively become shadows of the partition wall 6 during evaporation. Although these portions A, B, and C tend to be thinner than the portions overlapping with the lower electrode LE, they do not contribute to light emission because they are separated from the lower electrode LE. From the viewpoint of contacting the upper electrode UE with the partition wall 6 and suppressing undesirable contact between portions A and C, it is preferable that the aforementioned evaporation angles θ1 to θ3 are set such that portions A, B, and C are respectively formed on rib 5.

[0123] Regarding the width of portions A, B, and C along the second direction Y, portion B is larger than portion A, and portion C is larger than portion B. Furthermore, portion B covers portion A, and portion C covers portion B. Additionally, portions A and B are separate from partition 6, while portion C is connected to partition 6.

[0124] In the example described here, when the vapor deposition head 1201 is equivalent to the first vapor deposition head, the material M1 is equivalent to the first material, and the vapor deposition angle θ1 is equivalent to the first angle, the vapor deposition head 1202 or 1203 is equivalent to the second vapor deposition head, the material M2 or M3 is equivalent to the second material, and the vapor deposition angle θ2 or θ3 is equivalent to the second angle.

[0125] Alternatively, if the vapor deposition head 1203 is equivalent to the second vapor deposition head, the material M3 is equivalent to the second material, and the vapor deposition angle θ3 is equivalent to the second angle, then the vapor deposition head 1201 or 1202 is equivalent to the first vapor deposition head, the material M1 or M2 is equivalent to the first material, and the vapor deposition angle θ1 or θ2 is equivalent to the first angle.

[0126] Alternatively, there may be situations where the vapor deposition head 1201 is equivalent to the first vapor deposition head, the material M1 is equivalent to the first material, the vapor deposition angle θ1 is equivalent to the first angle, the vapor deposition head 1202 is equivalent to the second vapor deposition head, the material M2 is equivalent to the second material, the vapor deposition angle θ2 is equivalent to the second angle, the vapor deposition head 1203 is equivalent to the third vapor deposition head, the material M3 is equivalent to the third material, and the vapor deposition angle θ3 is equivalent to the third angle.

[0127] For example, material M1 is the material used to form the lower layer ORA of the organic layer OR, material M2 is the material used to form the upper layer ORB of the organic layer OR, and material M3 is the material used to form the upper electrode UE.

[0128] Thus, according to this embodiment, the vapor deposition head 120 has the function of controlling the vapor deposition angle. Therefore, the optimal vapor deposition angle can be achieved during the vapor deposition of each layer. In addition, the end positions of each layer can be staggered by controlling the vapor deposition angle.

[0129] Furthermore, if material adheres to the inner surface of the sleeve 124 during vapor deposition, the vapor deposition angle may change. According to this embodiment, by changing the position of the control plate 123 according to the amount of material adhered, the vapor deposition angle can be kept constant. In addition, since the moving mechanism 125 is housed in the chamber 140, the position of the control plate 123 can be changed while maintaining a vacuum inside the chamber 140.

[0130] As described above, according to this embodiment, a vapor deposition apparatus and a vapor deposition method capable of controlling the vapor deposition angle can be provided.

[0131] All vapor deposition apparatuses and methods that can be implemented by appropriate design modifications based on the vapor deposition apparatuses and methods described above as embodiments of the present invention, as long as they contain the spirit of the present invention, are also within the scope of the present invention.

[0132] It should be understood that various modifications and variations that can be conceived by those skilled in the art within the scope of the present invention also fall within the scope of the present invention. For example, as long as the essence of the present invention is present, technical solutions obtained by those skilled in the art through appropriate addition, deletion, or design changes to the above-described embodiments, or through the addition, omission, or modification of processes or conditions, are also included within the scope of the present invention.

[0133] Furthermore, regarding other effects resulting from the methods described in the above embodiments, any effects that are clear from the description in this specification or that can be reasonably conceived by those skilled in the art should naturally be considered as effects resulting from the present invention.

Claims

1. A vapor deposition apparatus, comprising: The first evaporation head is configured to deposit a first material onto a processing substrate; and The second evaporation head is configured to deposit the second material onto the processing substrate on which the first material has been deposited. The first evaporation head and the second evaporation head each have: A vapor deposition source that heats the material to generate vapor; Multiple nozzles are connected to the bottom surface of the vapor deposition source and extend along the normal direction of the bottom surface to spray out vapor generated by the vapor deposition source; The control panel is a flat plate parallel to the bottom surface; and A plurality of sleeves, the same number as the plurality of nozzles, are connected to the control plate and individually surround each of the plurality of nozzles, extending further toward the processing substrate than the tip of the nozzle. The distance from the front end of the nozzle to the front end of the sleeve in the second vapor deposition head is less than the distance from the front end of the nozzle to the front end of the sleeve in the first vapor deposition head. Each of the plurality of sleeves surrounds the plurality of nozzles throughout their respective circumference and is formed as a cylindrical shape extending in the extension direction of the nozzle.

2. The vapor deposition apparatus as described in claim 1, wherein, The expansion angle of the vapor of the second material ejected from the second evaporation head is greater than the expansion angle of the vapor of the first material ejected from the first evaporation head.

3. The vapor deposition apparatus as described in claim 1, wherein, The first evaporation head and the second evaporation head each have a moving mechanism, which moves the control plate with the sleeve along the extension direction of the sleeve.

4. The vapor deposition apparatus as described in claim 1, wherein, The first material is the material used to form the lower layer of the organic layer constituting the organic EL element. The second material is the material used to form the upper layer of the organic layer constituting the organic EL element.

5. The vapor deposition apparatus as described in claim 1, wherein, The first material is a material used to form the organic layer constituting the organic EL element. The second material is used to form the upper electrode constituting the organic EL element.

6. Evaporation deposition method, among which, A processing substrate is prepared having a lower electrode, a rib having an opening overlapping the lower electrode, and a partition wall formed on a substrate. The partition wall comprises a lower portion disposed above the rib and an upper portion disposed above the lower portion and projecting from the side of the lower portion. The partition wall is a grid-like structure surrounding the opening. The processing substrate is introduced into the first chamber. A sleeve, individually surrounded by multiple nozzles of the first evaporation head, is positioned at the first location. Vapor of the first material is ejected from the first evaporation head without a mask between the processing substrate and the first evaporation head. The partition wall serves as a mask for evaporating the first material onto the processing substrate. The processing substrate is introduced into a second chamber, different from the first chamber. A sleeve, individually surrounded by multiple nozzles of the second evaporation head, is positioned at a second location farther from the processing substrate than the first location. Vapor of the second material is ejected from the second evaporation head without a mask between the processing substrate and the second evaporation head. The second material is then deposited onto the processing substrate, on which the first material has been deposited, using the partition wall as a mask. The first evaporation head and the second evaporation head each have: Evaporation source; Multiple nozzles are connected to the bottom surface of the vapor deposition source and extend along the normal direction of the bottom surface; The control panel is a flat plate parallel to the bottom surface; and A plurality of sleeves, the same number as the plurality of nozzles, are connected to the control panel. The plurality of sleeves used to limit the expansion angle of the ejected steam each surround the plurality of nozzles throughout their respective circumference and are formed as cylindrical shapes extending in the extension direction of the nozzles.

7. The vapor deposition method as described in claim 6, wherein, The expansion angle of the vapor of the second material ejected from the second evaporation head is greater than the expansion angle of the vapor of the first material ejected from the first evaporation head.

8. The vapor deposition method as described in claim 6, wherein, The distance from the front end of the nozzle to the front end of the sleeve in the second vapor deposition head is less than the distance from the front end of the nozzle to the front end of the sleeve in the first vapor deposition head.

9. The vapor deposition method as described in claim 6, wherein, The first material forms the lower layer of the organic layer constituting the organic EL element, and is deposited on the lower electrode, the rib, and the upper part respectively, and is separate from the lower part. The second material forms the upper layer of the organic layer constituting the organic EL element, and covers the first material and is separated from the lower part.

10. The vapor deposition method as described in claim 6, wherein, The first material forms an organic layer constituting the organic EL element and is deposited on the lower electrode, the rib, and the upper part respectively, and is separate from the lower part. The second material forms the upper electrode constituting the organic EL element, covers the first material, and is in contact with the lower part.

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