GaN and diamond composite heat dissipation structure film and preparation method thereof

By growing an AlNGa-AlN-AlNC-NC composite layer on a GaN HEMT substrate as a buffer layer, the heat dissipation problem of GaN-based microwave power devices was solved, the bonding strength and heat dissipation efficiency were improved, and higher output power and better film quality were achieved.

CN116446041BActive Publication Date: 2026-06-09SHENZHEN RES INST OF WUHAN UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHENZHEN RES INST OF WUHAN UNIVERSITY
Filing Date
2023-03-13
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

GaN-based microwave power devices suffer from severe heat accumulation under conditions of miniaturization and power increase, leading to performance degradation. Traditional packaging and heat dissipation technologies are difficult to solve this problem. The heterogeneous integration epitaxy of diamond and GaN-based semiconductor materials has problems such as large lattice mismatch and large thermal mismatch, resulting in high thermal resistance of the bonding layer and poor film quality.

Method used

Using a Si-based GaN HEMT substrate or a GaN HEMT substrate with the Si base removed, an AlNGa-AlN-AlNC-NC composite layer is grown as a buffer layer after cleaning with an MOCVD instrument. The gradient concentration is designed to enhance the bonding force between diamond and GaN. The NC layer is used as the layer before diamond to grow a diamond film.

Benefits of technology

It improves the bonding force between diamond and GaN devices, reduces contact thermal resistance, increases heat dissipation efficiency and GaN effective output power by 25%, protects the buffer layer from hydrogen plasma etching, and simplifies the diamond film preparation process.

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Abstract

The application discloses a film layer of a GaN and diamond composite heat dissipation structure and a preparation method thereof. The film layer uses a gradually changing concentration AlNGa-AlN-AlNC-NC composite layer as a buffer layer of epitaxial diamond; and uses NC material as a previous layer of the epitaxial diamond. The film layer design scheme can improve the heat dissipation efficiency, improve 25% of the effective output power of GaN without damaging the GaN device, improve the bonding force between the diamond thin film and the GaN device, further improve the possibility of successfully epitaxial diamond, and protect the buffer layer from hydrogen plasma etching.
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