A circuit structure based on a high-gain photosensitive device

Abstract

The application discloses a circuit structure based on a high-gain photosensitive device, and is proposed in view of the problem of high dark current in the prior art. Mainly by regulating the gate voltage of two series MOS tubes when the optical signal is zero input, the current difference of the two is zero, and at least one of the MOS tubes is a PD-MOS. The advantage is that compared with the traditional photoelectric sensor, it has lower noise current and dark current, and realizes that the device has wide dynamic range and high sensitivity in small size. The PID has the functions of small size, high sensitivity, high gain and wide dynamic range; and has the functions of low dark current, low noise and low temperature drift. The pixel array prepared based on the PID can consider random reading and adopt spatial correlation double sampling to realize the way of reducing FPN, and the dynamic range of the random reading active pixel circuit of the embodiment of the application can be up to 160 dB. The high performance of the pixel is realized from the device level, and the working interval can be independently controlled through bias setting.

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