Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

By introducing dual photoelectric conversion elements and microlenses into the CMOS image sensor, combined with global shutter and autofocus functions, high dynamic range and high frame rate image capture are achieved, solving the problems of motion image distortion and insufficient dynamic range, and making it suitable for machine vision and IoT fields.

CN116456210BActive Publication Date: 2026-07-03PRILUNICUS SINGAPORE PTE LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
PRILUNICUS SINGAPORE PTE LTD
Filing Date
2023-01-10
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing CMOS image sensors are prone to image distortion when shooting moving subjects, and they are insufficient in terms of high dynamic range and autofocus performance, especially in applications in machine vision and IoT where demand is increasing.

Method used

A solid-state imaging device is employed, comprising two photoelectric conversion elements and a microlens. It achieves global shutter function and autofocus function by switching between different transmission periods and conversion gains, and can exhibit high dynamic range performance in single exposure. High dynamic range is achieved by switching the conduction state of the transmission elements and the conversion gain between autofocus mode and video mode.

Benefits of technology

It achieves high global shutter speed and autofocus, and can fully demonstrate the high dynamic range performance of a single exposure, solving the problems of image distortion and insufficient dynamic range, and is suitable for machine vision and IoT fields.

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Abstract

Provided are a solid-state imaging device, a driving method for the solid-state imaging device, and an electronic apparatus, which have high GS function, AF function, and can fully achieve SEHDR performance and substantially achieve high dynamic range and high frame rate. A conversion signal reading unit (211) performs, in accordance with driving control of a reading unit (70), in an imaging mode, reading processing of a pixel signal corresponding to a combined charge of accumulated charges of a first photodiode PD11 and a second photodiode PD12, in accordance with a first conversion gain HCG, and then in accordance with a second conversion gain LCG, while maintaining a first transfer transistor TG11-Tr and a second transfer transistor TG12-Tr in an on state during the same transfer period.
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