An ultrafast response organic photodetector based on light field control

By controlling the light field to limit the diffusion of photogenerated excitons, and using high-mobility organic materials to fabricate a bulk heterojunction structure for an ultrafast response organic photodetector, the problem of slow response speed of existing organic photodetectors is solved, achieving sub-nanosecond response and high bandwidth.

CN116456732BActive Publication Date: 2026-05-29SOUTH CHINA UNIV OF TECH
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Patent Information

Application Number
CN202310290289.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-03-23
Publication Date
2026-05-29
Estimated Expiration
2043-03-23

AI Technical Summary

Technical Problem

Existing organic photodetectors have a much slower response speed than traditional inorganic photodetectors. They also have complex structures, require stringent fabrication conditions, and require a long diffusion process to form photoexcitons after the electron or hole transport layer absorbs light in the detection band.

Method used

By employing a light field control approach, and selecting electron transport layers and hole transport layers that absorb very little light in the target wavelength band, the main light absorption location is limited to the photosensitive layer, actively suppressing the long-distance diffusion process of photogenerated excitons. High-mobility organic materials such as Rubrene, TAPC, C70, C60, and BCP are used to fabricate an ultrafast response organic photodetector with a bulk heterojunction structure.

Benefits of technology

It achieves sub-nanosecond response speed and a maximum bandwidth of 970 MHz in the red light band, reduces the carrier transport time inside the device, is suitable for flexible substrates, and can meet various application requirements.

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Abstract

The application discloses an ultrafast response organic photoelectric detector based on light field control, which has a bulk heterojunction structure and sequentially comprises a transparent substrate, an anode, a hole transport layer, a photosensitive layer, an electron transport layer, a hole blocking layer and a cathode. 70 The photosensitive layer is a blending layer of an electron donor material and an electron acceptor material. 60 The electron transport layer material is C 60 The material of the hole transport layer is Rubrene or TAPC. The application adopts the light field control mode, suppresses the diffusion process of excitons, realizes the ultrafast response speed, reaches the sub-nanosecond response in the red light band, and the highest bandwidth is up to 970MHz.
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