GOA circuit compensation device and method, and liquid crystal display

Abstract

The present invention relates to a compensation device for a GOA circuit, comprising a temperature detection module, a driver IC, a GOA circuit module, and a temperature compensation module. The driver IC is connected to the temperature detection module, the GOA circuit module, and the temperature compensation module, respectively, and the temperature compensation module is connected to the GOA circuit module. The present invention also relates to a method for performing GOA circuit compensation using the compensation device. The present invention also relates to a liquid crystal display, comprising a liquid crystal panel and the compensation device for the GOA circuit connected to the liquid crystal panel.

Description

Technical Field

[0001] The present invention relates to the field of liquid crystal display technology, and in particular to a compensation device and method for a GOA circuit capable of improving the stability of the GOA circuit in low-temperature and high-temperature environments, as well as a liquid crystal display. Background Art

[0002] This section provides background information related to the present application which does not necessarily constitute prior art.

[0003] Thin Film Transistor Liquid Crystal Displays (TFT-LCDs) are widely used in all aspects of life. Gate Driver On Array (GOA) technology integrates the thin film transistor gate drive circuitry directly onto the array substrate, replacing driver chips made from external silicon chips. Because GOA circuits eliminate the need for gate ICs, they can be fabricated directly around the panel, simplifying the manufacturing process and reducing product costs. This increases the integration density of TFT-LCD panels and allows for thinner displays.

[0004] Figure 1 FIG. 1 is a schematic diagram of a GOA circuit structure in the prior art. The GOA circuit includes multiple thin film transistors (TFTs). Figure 1 As shown in the figure, the TFTs in the GOA circuit include T11, T21, T22, T31, T321, T41, T42, T51 and T52. The signals connected to the gate, source and drain of each TFT are related to the normal operation and stability of the entire circuit. VDD is the power supply voltage, VSS is the common ground voltage, CK and XCK are two AC signals with opposite phases, G (N-1) is the gate signal output terminal of the N-1th level GOA unit, G (N) is the gate signal output terminal of the Nth level GOA unit, G (N+1) is the gate signal output terminal of the N+1th level GOA unit, ST (N-1) is the gate signal output terminal of the N-1th level GOA unit, ST (N) is the gate signal output terminal of the Nth level GOA unit, and Q (N) and P (N) are the corresponding nodes of the Nth level GOA unit. Figure 2 for Figure 1 The input signal and node waveforms of the GOA circuit are shown.

[0005] TFT conduction performance varies at different ambient temperatures. At low temperatures, TFT conduction performance deteriorates, weakening driving capability. This leads to insufficient drive capability in the GOA circuit and even GOA cascade anomalies. The GOA output cannot properly drive the pixel TFT to effectively turn on, resulting in display anomalies. At high temperatures, TFT conduction performance increases, but leakage also increases. This shortens TFT lifespan, increases leakage, and weakens liquid crystal retention, increasing the risk of screen flicker. Therefore, to expand the operating temperature range of the GOA circuit, the GOA turn-on voltage is intentionally increased to above 30V during driver circuit design. When the operating temperature drops, the TFT in the GOA circuit requires a higher operating voltage; when the operating temperature rises, the TFT in the GOA circuit requires a lower turn-on voltage. However, the TFT operating voltage directly affects the device lifespan. Maintaining a high operating voltage at high temperatures accelerates TFT aging. Failure to increase the TFT operating voltage at low temperatures can affect the proper output of the gate scan signal, thereby reducing the charge rate.

[0006] To solve the above technical problems, Chinese patent CN201811540919.4 discloses a driving voltage compensation method for a GOA circuit, which includes the following steps: (1) detecting the real-time temperature of the GOA circuit; and (2) looking up a preset temperature compensation table according to the real-time temperature to obtain a compensation voltage value that matches the real-time temperature, so as to linearly adjust the driving voltage of the GOA circuit according to the compensation voltage value, wherein the preset temperature compensation table records various pre-acquired temperature intervals and corresponding compensation voltage values.

[0007] To solve the above technical problems, Chinese patent CN201710513968.8 provides a GOA circuit module, including a power integration module, a timing control module, a compensation module and a temperature sensor. The temperature sensor is connected to the power integration module and the compensation module respectively, and is used to obtain the operating temperature of the GOA circuit module from the power integration module and transmit the operating temperature to the compensation module; the compensation module is also connected to the power integration module and the timing control module, and is used to obtain corresponding compensation parameters according to the operating temperature, and transmit the compensation parameters to the power integration module and / or the timing control module; the power integration module is also connected to the timing control module, and the power integration module and / or the timing control module adjust the DC low voltage or clock signal according to the compensation parameters and then output it to the liquid crystal panel, so that the operating voltage of the TFT device of the liquid crystal panel GOA circuit matches the operating temperature. Summary of the Invention

[0008] The present invention aims to provide a compensation device and method for a GOA circuit that can improve its stability in both low- and high-temperature environments. This compensation device, through the collaboration of a temperature detection module and a temperature compensation module, compensates for the GOA's driving capability. This can address the problem of a GOA circuit failing to display properly due to reduced driving capability in low-temperature environments, as well as the problem of a GOA circuit operating at high temperatures, which can shorten TFT life and increase power consumption.

[0009] To achieve the above objectives, the present invention adopts the following technical solution: a compensation device for a GOA circuit, comprising: a temperature detection module, a driver IC (i.e., a driver integrated chip), a GOA circuit module, and a temperature compensation module.

[0010] The driver IC is connected to the temperature detection module, the GOA circuit module and the temperature compensation module respectively. The temperature compensation module is connected to the GOA circuit module.

[0011] The pins of the driver IC include the CK pin (AC signal input pin), the VGL pin (negative power input pin of the TFT screen), the EN_1 pin, and the EN_2 pin. In one embodiment, the driver IC model is ST7701S.

[0012] The driver IC is connected to the temperature compensation module and the GOA circuit module via multiple chip output pins and related circuits. The temperature detection module is used to obtain the operating temperature of the GOA circuit module. The temperature detection module 10 converts the operating temperature into an output signal and transmits it to the driver IC. The driver IC generates a corresponding control signal based on the output signal and transmits it to the temperature compensation module.

[0013] The GOA circuit module includes a capacitor C1, a thin-film transistor M6, and a thin-film transistor M1. The drain of thin-film transistor M6 is connected to the gate of thin-film transistor M1, and capacitor C1 is connected to the gate and source of thin-film transistor M1. Gout(n-1) is the output signal of the n-1th GOA unit in the GOA circuit module, Cout(n) is the output signal of the nth GOA unit in the GOA circuit module, and Gout(n+1) is the output signal of the n+1th GOA unit in the GOA circuit module. The CK pin of the driver IC is connected to the drain of thin-film transistor M1, Gout(n-1) is connected to the drain of thin-film transistor M6 and the gate of thin-film transistor M1, and Gout(n+1) is connected to the gate of thin-film transistor M6. The VGL pin of the driver IC is connected to the source of thin-film transistor M6, and Gout(n) is connected to the source of thin-film transistor M1.

[0014] The EN_1 pin of the driver IC is connected to the switch signal line EN_1, and the EN_2 pin of the driver IC is connected to the switch signal line EN_2. The driver IC uses the switch signal lines EN_1 and EN_2 to respectively activate and activate the various thin-film transistors within the temperature compensation module. The temperature compensation module includes thin-film transistors M2, M3, M4, and M5. The driver IC is connected to the gate of thin-film transistor M5 via the switch signal line EN_1, and to the gate of thin-film transistor M4 via the switch signal line EN_2. The source of thin-film transistor M4 is connected to the gate of thin-film transistor M2, and the source of thin-film transistor M5 is connected to the gate of thin-film transistor M3. The CK pin of the driver IC is connected to both the drain of thin-film transistor M2 and the drain of thin-film transistor M3. Gout(n) is connected to both the source of thin-film transistor M2 and the source of thin-film transistor M3. The connection point between capacitor C1 and the gate of thin-film transistor M1 is connected to both the drain of thin-film transistor M4 and the drain of thin-film transistor M5.

[0015] According to the characteristics of the TFT switch, its on-state current can be referred to the following formula:

[0016] I ds =μ×C ox × (W / L) × (V gs -V th -V ds / 2) ×V ds

[0017] Where, μ is the electron mobility; C ox is the unit area capacitance of the MIS structure of the TFT device; W / L is the ratio of the channel width to the channel length of the TFT device; V gs is the gate-source voltage difference; V th is the threshold voltage; V ds is the source-drain voltage difference. From the on-state current formula of the TFT switch, we can know that: I ds The ratio of W / L and C ox Positive correlation, when L is constant, the larger W is, the higher C is. ox The larger the W is, the stronger the TFT conduction capability is; on the contrary, the smaller the W is, the stronger the C ox Therefore, the driver IC turns on the thin film transistor M4 and / or the thin film transistor M5 through the switch signal lines EN_1 and EN_2, respectively, thereby using the thin film transistor M2 and / or the thin film transistor M3 to enhance the conduction capability of M1.

[0018] The present invention also provides a method for performing GOA circuit compensation using the compensation device, the method comprising the following steps:

[0019] The temperature detection module detects the real-time temperature of the GOA circuit module;

[0020] The driver IC switches the output timing of EN_1 and EN_2 according to the detection result of the temperature detection module;

[0021] The driving capability of the thin film transistor M1 of the GOA circuit module is compensated by turning on the thin film transistor M2 and / or the thin film transistor M3 of the temperature compensation module.

[0022] The present invention also provides a liquid crystal display, comprising a liquid crystal panel and a compensation device for the aforementioned GOA circuit connected to the liquid crystal panel. The GOA circuit module of the compensation device is connected to the liquid crystal panel, and the driver IC is configured to provide power to the GOA circuit module and output a low DC voltage to the liquid crystal panel.

[0023] Compared to existing technologies, the technical solution of the present invention has at least the following beneficial effects: it improves the stability of the GOA circuit, broadens the operating temperature range, and reduces the risk of display anomalies at high and low temperatures. Existing solutions adjust the output voltage of the driver IC based on temperature, while the technical solution of the present invention integrates the temperature compensation module on the glass substrate, reducing the cost of the driver IC and eliminating the need to adjust the driver IC's drive voltage, resulting in lower display power consumption and easier implementation.

[0024] The following describes the details in conjunction with specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The accompanying drawings further illustrate the present invention, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention.

[0026] Figure 1 Schematic diagram of the existing GOA circuit architecture;

[0027] Figure 2 The input signal and node waveform diagram of the existing GOA circuit;

[0028] Figure 3 A schematic structural diagram of a liquid crystal display provided by an embodiment of the present invention;

[0029] Figure 4 A schematic diagram of a circuit of a GOA circuit module and a temperature compensation module provided in one embodiment of the present invention;

[0030] Figures 5a-5c These are timing diagrams of a compensation device for a GOA circuit provided by an embodiment of the present invention configured according to the principle of temperature compensation;

[0031] Figure 6 Based on Figure 5cThe low temperature compensation timing shown in the figure is simulated by Gateway software.

[0032] Figure 7 Based on Figure 5b The high temperature compensation timing shown in the figure is a waveform simulated by Gateway software. DETAILED DESCRIPTION

[0033] It should be understood that the embodiments described are only a portion of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative work are within the scope of protection of the present invention.

[0034] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The singular forms "a", "an", "the" and "the" used in the embodiments of the present invention and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0035] It should be understood that the term "and / or" as used herein is merely a description of the relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A exists alone, A and B exist simultaneously, or B exists alone. Furthermore, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0036] like Figure 3 As shown, this embodiment provides a liquid crystal display, including a liquid crystal panel (corresponding to the attached Figure 1 The present invention relates to a device for compensating a GOA circuit connected to a display area 50 in a liquid crystal panel and a GOA circuit. The GOA circuit compensation device includes a temperature detection module 10, a driver IC 20, a GOA circuit module 30, and a temperature compensation module 40. The GOA circuit module 30 of the compensation device is connected to the display area 50, and the driver IC 20 is connected to the temperature detection module 10, the GOA circuit module 30, and the temperature compensation module 40, respectively. The temperature compensation module 40 is connected to the GOA circuit module 30. The driver IC 20 is connected to the temperature compensation module 40 and the GOA circuit module 30 via multiple chip output pins and related circuits.

[0037] The temperature detection module 10 is used to obtain the operating temperature of the GOA circuit module 30. The temperature detection module 10 can be implemented using any existing technology, so it will not be described in detail here. In this embodiment, the temperature detection module 10 is located on a glass substrate, and the GOA circuit module 30 is also located on a glass substrate. In this way, the ambient temperature of the temperature detection module 10 and the GOA circuit module 30 is consistent, so that the output signal of the temperature detection module 10 can accurately reflect the operating ambient temperature of the GOA circuit module 30. The output signal of the temperature detection module 10 can be transmitted to the driver IC 20, and the driver IC 20 generates a corresponding control signal based on the output signal. The driver IC 20 can determine the current temperature based on the output signal and determine the control signal based on the current temperature.

[0038] The temperature detection module 10 converts the operating temperature into an output signal and transmits it to the driver IC 20. The driver IC 20 generates a corresponding control signal based on the output signal and transmits it to the temperature compensation module 40. The temperature compensation module 40 is connected to the driver IC 20 and determines the action corresponding to the current temperature based on the control signal. In this embodiment, the control signal is a turn-on signal for the thin-film transistor M4 and the thin-film transistor M5, controlling whether the gates of the thin-film transistors M4 and M5 are conductive. In other words, the control signal is used to control the operating state of the thin-film transistors M4 and M5. The driver IC 20 outputs a control signal corresponding to the temperature through the switch signal lines EN_1 and EN_2. The temperature characteristics of the thin-film transistor M5 and the temperature characteristics of the thin-film transistor M4 meet preset conditions. The driver IC 20 controls the working state of the thin film transistor M4 through the switch signal line EN_1, thereby indirectly controlling the opening and closing of the thin film transistor M2. The driver IC 20 controls the working state of the thin film transistor M5 through the switch signal line EN_2, thereby indirectly controlling the opening and closing of the thin film transistor M3.

[0039] In this embodiment, the temperature characteristics of the thin film transistor M4 and the temperature characteristics of the thin film transistor M5 satisfy a preset condition, which may include: the temperature characteristics of the thin film transistor M4 and the thin film transistor M5 are the same, for example, the type and model of the thin film transistor M4 and the thin film transistor M5 are the same, then the temperature characteristics of the thin film transistor M4 and the thin film transistor M5. The temperature characteristics may include: the turn-on voltage of the transistor at different temperatures, the electron mobility of the thin film transistor at different high temperatures, etc.

[0040] In other embodiments, the temperature characteristics of the thin film transistor M4 and the temperature characteristics of the thin film transistor M5 meet preset conditions, which may also include: the temperature characteristics of the thin film transistor M4 and the thin film transistor M5 are similar, indicating that the temperature characteristics of the two transistors or the two transistors are very close, so close that the difference is within a preset range.

[0041] In this embodiment, the driver IC 20 may be various processing circuits or processors, including central processing units, microprocessors, digital signal processors, application processors, programmable arrays, application-specific integrated circuits, or other integrated chips or circuits.

[0042] In this embodiment, the GOA circuit module 30 is formed by connecting a plurality of thin film transistors. The thin film transistors of the GOA circuit module 30 can control the deflection degree of the liquid crystal corresponding to the pixel in the liquid display area 50, thereby controlling the display brightness and / or color of the corresponding pixel.

[0043] like Figure 4 As shown, the GOA circuit module 30 includes a capacitor C1, a thin film transistor M6 and a thin film transistor M1. The drain of the thin film transistor M6 is connected to the gate of the thin film transistor M1, the capacitor C1 is respectively connected to the gate and source of the thin film transistor M1, the CK pin (AC signal input pin) of the driver IC 20 is connected to the drain of the thin film transistor M1, Gout (n-1) (the output signal of the n-1th level GOA unit) is respectively connected to the drain of the thin film transistor M6 and the gate of the thin film transistor M1, Gout (n+1) (the output signal of the n+1th level GOA unit) is connected to the gate of the thin film transistor M6, the VGL pin (the negative power input pin of the TFT screen) of the driver IC 20 is connected to the source of the thin film transistor M6, and Gout (n) (the output signal of the nth level GOA unit) is connected to the source of the thin film transistor M1.

[0044] like Figure 4 As shown, the driver IC 20 uses switching signal lines EN_1 and EN_2 to activate different thin-film transistors within the temperature compensation module 40 and perform corresponding operations. The temperature compensation module 40 includes thin-film transistors M2, M3, M4, and M5. The driver IC is connected to the gate of thin-film transistor M5 via switching signal line EN_1, and to the gate of thin-film transistor M4 via switching signal line EN_2. The source of thin-film transistor M4 is connected to the gate of thin-film transistor M2, and the source of thin-film transistor M5 is connected to the gate of thin-film transistor M3. The CK pin is connected to both the drain of thin-film transistor M2 and the drain of thin-film transistor M3. Gout(n) is connected to both the source of thin-film transistor M2 and the source of thin-film transistor M3.

[0045] like Figure 4 As shown, the connection point between the capacitor C1 and the gate of the thin film transistor M1 is connected to the drain of the thin film transistor M4 and the drain of the thin film transistor M5 at the same time.

[0046] exist Figure 4 CK shown in FIG is a preset periodically changing signal, EN_1 is the enable pin for thin-film transistor M5, EN_2 is the enable pin for thin-film transistor M4, and Gout is used to control the gates of a predetermined number of thin-film transistors in the GOA circuit module 30 to be turned on. The GOA circuit module 30 includes multiple cascaded driver subunits, that is, the GOA circuit module 30 includes N driver subunits. The output signal of the nth driver subunit is the input signal of the (n+1)th driver subunit, where n is a positive integer less than N; N is also a positive integer.

[0047] like Figure 4 As shown in , the current working environment temperature can be obtained from the temperature detection module 10, and the driver IC 20 generates a control signal corresponding to the current temperature based on the current working environment temperature. The control signal is then directly applied to the thin film transistor M4 and / or the thin film transistor M5. The thin film transistor M4 and / or the thin film transistor M5 are turned on or turned on, thereby using the thin film transistor M2 and / or the thin film transistor M3 to compensate for the driving capability of the thin film transistor M1. In this way, the compensation device of the GOA circuit may not include a memory storing control signals corresponding to the temperature (the function of the memory is to query or search the corresponding relationship between the temperature and the control signal based on the current working environment temperature, so as to find a control signal that is well displayed in the control display area 50 that is adapted to the current working environment temperature).

[0048] This embodiment also provides a method for performing GOA circuit compensation using the compensation device for the GOA circuit provided by the present invention, the method comprising the following steps:

[0049] Step S110: the temperature detection module detects the real-time temperature of the GOA circuit module;

[0050] Step S120: the driver IC switches the output timing of EN_1 and EN_2 according to the detection result of the temperature detection module;

[0051] Step S130: Compensating for the driving capability of the thin film transistor M1 of the GOA circuit module by turning on and off the thin film transistor M2 and the thin film transistor M3 of the temperature compensation module.

[0052] The thin-film transistors (including thin-film transistors M1 and M6) of the GOA circuit module may have different conduction electrical signals (e.g., conduction voltage or conduction current) at different temperatures. Whether the thin-film transistors are on or off determines whether the current output signal of Gout(n) is a high level or a low level, and obviously also determines the duty cycle of the output signal of Gout(n) within a certain period. The high level and low level here are relative to a reference level, for example, the reference level can be 0V.

[0053] The method can be applied to a display device. The method obtains a corresponding control signal according to the current working environment temperature.

[0054] Figure 5a 、 Figure 5b and Figure 5c The timing diagram of the compensation device of the GOA circuit is configured according to the principle of temperature compensation. Specifically:

[0055] 1. If Figure 5a As shown, when the temperature detection module detects that the working environment temperature of the GOA circuit module is normal temperature (25-35°C):

[0056] T1: EN_1 is high, EN_2 is low, Gout (n-1) is high, Gout (n+1) is low, CK is low, point A (corresponding to the attached Figure 4 Point A marked in (the same below) is high, the thin film transistors M1 and M5 are turned on, the thin film transistors M2, M3, M4 and M6 are turned off, and the output of Gout(n) is low;

[0057] T2: EN_1 is high, EN_2 is low, Gout(n-1) is low, Gout(n+1) is low, CK is high, point A is high, thin film transistors M1, M3, and M5 are turned on, thin film transistors M2, M4, and M6 are turned off, and Gout(n) output is high;

[0058] T3: EN_1 is high, EN_2 is low, Gout(n-1) is low, Gout(n+1) is high, CK is low, point A is low, thin film transistors M5 and M6 are turned on, thin film transistors M1, M2, M3, and M4 are turned off, and Gout(n) output is low;

[0059] T4: EN_1 is high, EN_2 is low, Gout(n-1) is low, Gout(n+1) is low, CK is high, point A is low, thin film transistor M5 is turned on, thin film transistor M1, thin film transistor M2, thin film transistor M3, thin film transistor M4, and thin film transistor M6 are turned off, and Gout(n) output is low.

[0060] 2. If Figure 5b As shown, when the temperature detection module detects that the working environment temperature of the GOA circuit module is high temperature (not less than 80°C):

[0061] T1: EN_1 is low, EN_2 is low, Gout(n-1) is high, Gout(n+1) is low, CK is low, point A is high, thin film transistor M1 is turned on, thin film transistor M2, thin film transistor M3, thin film transistor M4, thin film transistor M5, and thin film transistor M6 are turned off, and Gout(n) output is low;

[0062] T2: EN_1 is low, EN_2 is low, Gout(n-1) is low, Gout(n+1) is low, CK is high, point A is high, thin film transistor M1 is turned on, thin film transistor M2, thin film transistor M3, thin film transistor M4, thin film transistor M5, and thin film transistor M6 are turned off, and Gout(n) output is high;

[0063] T3: EN_1 is low, EN_2 is low, Gout(n-1) is low, Gout(n+1) is high, CK is low, point A is low, TFT M6 is turned on, TFT M1, TFT M2, TFT M3, TFT M4 and TFT M5 are turned off, and Gout(n) output is low;

[0064] T4: EN_1 is low, EN_2 is low, Gout (n-1) is low, Gout (n+1) is low, CK is high, point A is low, thin film transistors M1, M2, M3, M4, M5, and M6 are turned off, and Gout (n) output is low.

[0065] 3. If Figure 5c As shown, when the temperature detection module detects that the working environment temperature of the GOA circuit module is low temperature (not greater than -30°C):

[0066] T1: EN_1 is high, EN_2 is high, Gout(n-1) is high, Gout(n+1) is low, CK is low, point A is high, thin film transistors M1, M4, and M5 are turned on, thin film transistors M2, M3, and M6 are turned off, and Gout(n) output is low;

[0067] T2: EN_1 is high, EN_2 is high, Gout(n-1) is low, Gout(n+1) is low, CK is high, point A is high, thin film transistors M1, M2, M4, M3, and M5 are turned on, thin film transistor M6 is turned off, and Gout(n) output is high;

[0068] T3: EN_1 is high, EN_2 is high, Gout(n-1) is low, Gout(n+1) is high, CK is low, point A is low, thin film transistors M4, M5, and M6 are turned on, thin film transistors M1, M2, and M3 are turned off, and Gout(n) output is low;

[0069] T4: EN_1 is high, EN_2 is high, Gout (n-1) is low, Gout (n+1) is low, CK is high, point A is low, thin film transistors M4 and M5 are turned on, thin film transistors M1, M2, M3, and M6 are turned off, and Gout (n) output is low.

[0070] Figure 6 Based on Figure 5c The low temperature compensation timing shown in FIG is a waveform diagram simulated by Gateway software. The W / L values ​​of the thin film transistor M1, the thin film transistor M2 and the thin film transistor M3 are all 1000 / 3. Figure 6 As shown in the figure, after low temperature compensation, the rise time is reduced from 8.3624us to 5.914us, and the fall time is reduced from 30.39us to 4.6911us, and the waveform is significantly improved.

[0071] Figure 7 Based on Figure 5b The high temperature compensation timing shown in FIG is a waveform diagram simulated by Gateway software. The W / L values ​​of the thin film transistor M1, the thin film transistor M2, and the thin film transistor M3 are all 1000 / 3. Figure 7 As shown in the figure, after high temperature compensation, the output voltage is reduced from -2.8197V to -8.6966V, and the waveform is significantly improved.

[0072] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as: multiple units or group components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0073] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0074] In addition, all functional units in the embodiments of the present invention can be integrated into one processing module, or each unit can be a separate unit, or two or more units can be integrated into one unit; the above-mentioned integrated units can be implemented in the form of hardware components or in the form of hardware components plus software component functional units.

[0075] Those skilled in the art will appreciate that all or part of the steps of the above-mentioned method embodiments may be implemented through hardware components related to program instructions. The aforementioned program may be stored in a computer-readable storage medium. When the program is executed, the program executes the steps of the above-mentioned method embodiments. The aforementioned storage medium includes various media that can store program codes, such as mobile storage devices, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical disks.

[0076] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0077] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A method for compensating a GOA circuit using a compensation device, characterized in that: The compensation device includes a temperature detection module, a driver IC, a GOA circuit module and a temperature compensation module, the driver IC is connected to the temperature detection module, the GOA circuit module and the temperature compensation module respectively, and the temperature compensation module is connected to the GOA circuit module; Gout(n-1) is the output signal of the n-1th level GOA unit of the GOA circuit module, Cout(n) is the output signal of the nth level GOA unit of the GOA circuit module, and Gout(n+1) is the output signal of the n+1th level GOA unit of the GOA circuit module; The GOA circuit module includes a capacitor C1, a thin film transistor M6 and a thin film transistor M1. The drain of the thin film transistor M6 is connected to the gate of the thin film transistor M1. The capacitor C1 is connected to the gate and source of the thin film transistor M1 respectively. The CK pin of the driver IC is connected to the drain of the thin film transistor M1. The Gout (n-1) is connected to the drain of the thin film transistor M6 and the gate of the thin film transistor M1 respectively. The Gout (n+1) is connected to the gate of the thin film transistor M6. The VGL pin of the driver IC is connected to the source of the thin film transistor M6. The Gout (n) is connected to the source of the thin film transistor M1. The temperature compensation module includes a thin film transistor M2, a thin film transistor M3, a thin film transistor M4, and a thin film transistor M5. The driver IC is connected to the gate of the thin film transistor M5 via a switch signal line EN_1, and is connected to the gate of the thin film transistor M4 via a switch signal line EN_2. The source of the thin film transistor M4 is connected to the gate of the thin film transistor M2, and the source of the thin film transistor M5 is connected to the gate of the thin film transistor M3. The CK pin is simultaneously connected to the drain of the thin film transistor M2 and the drain of the thin film transistor M3. The Gout(n) is simultaneously connected to the source of the thin film transistor M2 and the source of the thin film transistor M3. The connection point between the capacitor C1 and the gate of the thin film transistor M1 is simultaneously connected to the drain of the thin film transistor M4 and the drain of the thin film transistor M5. The method comprises the following steps: The temperature detection module detects the real-time temperature of the GOA circuit module; The driver IC switches the output timing of EN_1 and EN_2 according to the detection result of the temperature detection module; The driving capability of the thin film transistor M1 of the GOA circuit module is compensated by turning on the thin film transistor M2 and / or the thin film transistor M3 of the temperature compensation module.

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