An amplification feedback laser and a preparation method thereof

Abstract

The application provides an amplification feedback laser and a preparation method thereof, relates to the field of optoelectronic technology, avoids the problem that the purity of light-generated microwaves is influenced by degenerate double modes in the prior art amplification feedback laser, and thus greatly improves the device performance. The amplification feedback laser comprises a laser region, a phase control region and an amplification feedback region; the phase control region is arranged between the laser region and the phase control region and is connected with the laser region and the amplification feedback region respectively; the laser region, the phase control region and the amplification feedback region each comprise a multilayer growth structure; the multilayer growth structure comprises a grating layer, the grating layer of the laser region comprises a grating region and a non-grating region, and the grating region comprises a grating.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optoelectronics, and in particular to an amplified feedback laser and a preparation method thereof. BACKGROUND

[0002] With the vigorous development of technologies such as the Internet of Things, autonomous driving, and radar, low-frequency electromagnetic wave resources are increasingly scarce, and researchers have begun to explore shorter wavelengths and higher frequencies of electromagnetic wave bands to obtain greater bandwidth. Among them, photonic microwave is one of the important means. One important technical means of photonic microwave includes generating microwave signals through double-mode laser frequency mixing. Two modes in the laser resonant cavity oscillate in the same cavity, have good phase correlation, and can directly frequency-mix to generate stable microwave signals, and are widely used.

[0003] Double-mode lasers are mainly divided into dual-wavelength fiber lasers and monolithic integrated dual-wavelength semiconductor lasers; the former has a large system size, which is not conducive to miniaturization; the latter uses photon integration technology for monolithic integration, can realize miniaturization and integration, and has a more extensive application prospect. The amplified feedback laser (AFL) is a typical dual-wavelength semiconductor laser.

[0004] The conventional amplified feedback laser includes a distributed feedback laser (DFB) region, a phase control region, and an amplified feedback region, and the phase control region and the amplified feedback region jointly constitute an external feedback cavity of the distributed feedback laser region. To achieve good photonic microwave signal output, the amplified feedback laser is usually required to be capable of single-mode operation under no feedback condition. In this way, when the amplified feedback cavity is working, another optical mode can appear on the basis of single mode, thereby realizing dual-mode output. However, researchers have found that the distributed feedback laser region works in a degenerate dual-wavelength state under no feedback condition; then when feedback exists, the amplified feedback laser can appear two groups of dual-mode (i.e., degenerate dual-mode) on the basis of the degenerate dual-wavelength, thereby greatly reducing the purity of the output photonic microwave. SUMMARY

[0005] The present application provides an amplified feedback laser and a preparation method thereof, which avoids the problem that the purity of photonic microwave is affected by degenerate dual-mode in the prior art, thereby greatly improving the performance of the device.

[0006] The present application provides an amplified feedback laser, comprising: a laser region, a phase control region, and an amplified feedback region; the phase control region is arranged between the laser region and the amplified feedback region, and is connected with the laser region and the amplified feedback region, respectively;

[0007] The laser region, the phase control region and the amplification feedback region each comprise a multi-layer growth structure; the multi-layer growth structure comprises a grating layer, the grating layer of the laser region comprises a grating region and a non-grating region, and the grating region comprises a grating; the grating layer of the phase control region and the grating layer of the amplification feedback region each comprise grating material covering the region.

[0008] The amplification feedback laser further comprises a substrate, and the laser region, the phase control region and the amplification feedback region are integrated on the same side of the substrate.

[0009] The multi-layer growth structure further comprises an active layer, which is arranged between the substrate and the grating layer; growth structures arranged in different regions and belonging to the same layer are made of the same material.

[0010] The amplification feedback laser further comprises a substrate, and the laser region, the phase control region and the amplification feedback region are integrated on the same side of the substrate.

[0011] The multi-layer growth structure further comprises a buffer layer, a first confinement layer, a quantum well layer, a second confinement layer, an etching stop layer, a grating layer, a waveguide layer and an electrode layer arranged in sequence on the substrate; the grating layer is arranged between the etching stop layer and the waveguide layer; and in the multi-layer growth structure, growth structures arranged in different regions and belonging to the same layer are integrally connected.

[0012] The waveguide layer comprises three waveguide portions arranged in parallel and spaced apart along a preset direction, and the arrangement direction of the laser region, the phase control region and the amplification feedback region is perpendicular to the preset direction; grooves are arranged between adjacent waveguide portions to expose the grating layer; and in the laser region, the grating at least partially overlaps the waveguide portion located at the middle position in the direction perpendicular to the substrate.

[0013] The waveguide portion comprises an upper cover portion and a contact portion, and the contact portion is arranged on the side of the upper cover portion away from the substrate.

[0014] The upper cover portions arranged in different regions are integrally connected; and the contact portions arranged in different regions are independent of each other.

[0015] The electrode layer comprises a first electrode and a second electrode connected in an electrically connected manner.

[0016] The first electrode covers the contact portion in the middle position, and the second electrode covers a partial area of any of the contact portions in the two side positions.

[0017] The application further provides a preparation method of the amplification feedback laser as described above, comprising:

[0018] forming the laser region, the phase control region and the amplification feedback region;

[0019] forming the laser region comprises:

[0020] forming the grating layer by holographic exposure and dry etching process.

[0021] According to the application, a preparation method of an amplification feedback laser is provided, the amplification feedback laser further comprises a substrate, the laser region, the phase control region and the amplification feedback region are integrated on the same side of the substrate; the multi-layer growth structure further comprises an active layer, the active layer is arranged between the substrate and the grating layer; the growth structures arranged in different regions and belonging to the same layer adopt the same material;

[0022] the forming the laser region, the phase control region and the amplification feedback region comprises:

[0023] forming the laser region, the phase control region and the amplification feedback region on the substrate by using the same process.

[0024] The application provides an amplification feedback laser and a preparation method thereof, the amplification feedback laser comprising: a laser region, a phase control region and an amplification feedback region; the phase control region is arranged between the laser region and the amplification feedback region and connected with the laser region and the amplification feedback region respectively; wherein the laser region, the phase control region and the amplification feedback region each comprise a multi-layer growth structure; the multi-layer growth structure comprises a grating layer, the grating layer of the laser region comprises a grating region and a non-grating region, and the grating region comprises a grating; the grating layer of the phase control region and the grating layer of the amplification feedback region each comprise grating material covering the region. The amplification feedback laser adopts a partial-grating laser region, and the two threshold values in the threshold spectrum of the partial-grating laser region are greatly different, so that single-mode output is easily realized under the condition of no feedback, thereby avoiding the problem of degenerate double mode, further avoiding the problem of affecting the purity of photo-generated microwave due to the degenerate double mode, improving the single-mode yield, and further greatly improving the device performance. BRIEF DESCRIPTION OF DRAWINGS

[0025] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the structure of the amplified feedback laser provided by the present invention;

[0027] Figure 2 yes Figure 1 Top view of the middle raster layer;

[0028] Figure 3 yes Figure 1 Top view of the middle waveguide layer;

[0029] Figure 4 It is along Figure 1 A schematic diagram of the cross-section along the BB1 ​​direction. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0031] In the embodiments of the present invention, the use of terms such as "first" and "second" to distinguish identical or similar items with essentially the same function and effect is only for the purpose of clearly describing the technical solutions of the embodiments of the present invention, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0032] In embodiments of the present invention, "multi-layer" means two or more layers, "at least one layer" means one or more layers, and "multiple" means two or more layers, unless otherwise explicitly defined.

[0033] In the embodiments of the present invention, the terms "upper" and "lower" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0034] An embodiment of the present invention provides an amplified feedback laser, see reference. Figure 1As shown, the amplifier feedback laser includes: a laser region A1, a phase control region A2 and an amplifier feedback region A3; the phase control region A2 is arranged between the laser region A1 and the amplifier feedback region A3, and is connected with the laser region A1 and the amplifier feedback region A3 respectively.

[0035] Wherein, in combination Figure 1 And Figure 2 As shown, the laser region A1, the phase control region A2 and the amplifier feedback region A3 each include a multi-layer growth structure 1; the multi-layer growth structure includes a grating layer; the grating layer 2 of the laser region A1 includes a grating region G2 and a non-grating region G1, and the grating region includes a grating. The grating layer 2a of the phase control region A2 and the grating layer 2b of the amplifier feedback region A3 each include a grating material covering the region.

[0036] The above-mentioned laser region (referred to as PC-LD region), phase control region (referred to as P region) and amplifier feedback region (referred to as A region) together constitute the resonant cavity of the amplifier feedback laser. The laser region is in a lasing state under the action of the driving current, thereby emitting a single-mode light. The phase control region and the amplifier feedback region together constitute a short external feedback cavity of the laser region, and provide feedback light with appropriate phase and intensity, wherein the phase control region is used for controlling the phase of the feedback light signal, and the amplifier feedback region is used for controlling the intensity of the feedback light signal. The bimode spacing of the laser is determined by the resonant cavity length. By controlling the injection current of the phase control region and the amplifier feedback region, the phase and intensity of the feedback light signal can be controlled respectively, thereby adjusting the mode spacing of the bimode light signal. The laser region, the phase control region and the amplifier feedback region cooperate with each other, so that the amplifier feedback laser works in a bimode state or a chaotic state, thereby realizing the output of a bimode light signal with tunable mode spacing or a wide-spectrum chaotic light signal. In the above-mentioned laser region, the grating region refers to a region provided with a grating, and the non-grating region refers to a region without a grating. The specific type and structure of the grating are not limited, for example, refer to Figure 2 As shown, the grating can include a plurality of parallel opaque parts 3, and a slit 4 is arranged between adjacent opaque parts 3, and here the length and width of the opaque part are not limited, and can be selected according to design requirements.

[0037] The preparation method of the above-mentioned grating layer is not limited, for example, a holographic exposure and dry etching process can be used for preparation.

[0038] The grating layer of the above-mentioned phase control region and the grating layer of the amplifier feedback region each include a grating material covering the region, that is, refer to Figure 2 As shown, the grating layer 2a of the phase control region and the grating layer 2b of the amplifier feedback region are not provided with gratings, and only the grating region G2 in the laser region is provided with a grating. In order to distinguish, Figure 2In the embodiment, the grating layer of the laser region A1, the grating layer of the phase control region A2 and the grating layer of the amplification feedback region A3 are marked as 2, 2a and 2b respectively; Figure 1 The multi-layer growth structure 1 is taken as an example to mark the growth structure.

[0039] The working wave band of the amplification feedback laser provided by the embodiment can be 1.3 μm or 1.5 μm. Of course, the semiconductor gain material can also be adjusted to work at other communication wave bands, which are not limited herein.

[0040] The embodiment of the present application provides an amplification feedback laser, which adopts a partial grating laser region, and two threshold values in the threshold spectrum of the partial grating laser region are greatly different, and single mode output is easily realized under the condition of no feedback, so that the problem of degenerate double mode is avoided, and the problem of affecting the purity of photo-generated microwave due to the degenerate double mode is avoided, and finally the single mode yield is improved, and the device performance is greatly improved.

[0041] In the prior art, the phase control region is usually made of a passive structure, and the laser region and the phase control region are made of an active structure. The butt-joint regrowth (BJR) and quantum well intermixing (QWI) are usually adopted to realize the monolithic integration of the passive structure and the active structure. The butt-joint regrowth can optimize the materials of different growth regions respectively, and has high flexibility. However, the growth quality of the materials at the butt-joint interface of the active and passive structures is difficult to guarantee, and additional mirror feedback is easily introduced in the cavity, which affects the working state of the laser. In addition, the butt-joint regrowth needs to contact the layer material three times, and the process is complex. The quantum well intermixing induces defects or impurities on the material surface through doping or ion implantation, and a large number of lattice defects diffuse to the quantum well region under high-temperature annealing, which induces the atomic mutual diffusion and intermixing between the barrier material and the well material of the quantum well, so that the energy band shape of the quantum well changes from the ladder type to the parabolic type. However, when the quantum well intermixing is adopted, the injection concentration, the annealing temperature and the time need to be controlled, and the process repeatability in the preparation process is difficult to guarantee, and the material damage problem is inevitably caused when the defects are introduced.

[0042] In order to solve the above problems, optionally, with reference to Figure 1 As shown in the figure, the amplification feedback laser further includes a substrate 5, and the laser region A1, the phase control region A2 and the amplification feedback region A3 are integrated on the same side of the substrate 5; the multi-layer growth structure further includes an active layer, and the active layer is arranged between the substrate and the grating layer; the growth structures arranged in different regions and belonging to the same layer adopt the same material.

[0043] The active layer can include at least one layer of, for example,Figure 1 The quantum well layer 8 is not limited in quantity and material.

[0044] The amplification feedback laser provided by the embodiment of the present application belongs to a full active grating amplification feedback laser, wherein the phase control region, the laser region and the amplification feedback region adopt the same material system, that is, the same material is adopted for the growth structure of the same layer; and all of the three regions include an active layer, so that the butt joint growth process or the quantum well hybrid process is not additionally adopted, the additional mirror feedback is avoided in the resonant cavity, and the preparation process is further simplified.

[0045] Optionally, the difference between the center wavelength of the photoluminescence spectrum of the phase control region and the lasing wavelength of the laser region is greater than a preset value.

[0046] After a large amount of research, the preset value can be 20nm-30nm, and for example, the preset value can be 20nm, 24nm, 26nm, 28nm or 30nm.

[0047] In the case that the difference between the center wavelength of the photoluminescence spectrum of the phase control region and the lasing wavelength of the laser region is greater than the preset value, when a small current injection or no injection is applied to the phase control region below the transparent current, the absorption of the phase control region to the optical signal can be effectively reduced, so as to reduce the optical loss in the cavity.

[0048] In order to further simplify the structure and facilitate the manufacturing, optionally, Figure 1 As shown in the figure, the multilayer growth structure 1 further includes a buffer layer 6, a first confinement layer 7, a quantum well layer 8, a second confinement layer 9, an etching stop layer 10, a waveguide layer 11 and an electrode layer 12 which are sequentially stacked on the substrate 5; wherein the grating layer 2 is arranged between the etching stop layer 10 and the waveguide layer 11. Figure 1 The growth structures are marked by taking the multilayer growth structure 1 included in the laser region A1 as an example.

[0049] The materials of the above-mentioned layers are not limited, and for example, the InP material system is taken as an example for description, the material of the substrate can include N-type InP, the material of the buffer layer can include N-type InP, the material of the first confinement layer can include AlGaInAs, the material of the quantum well layer can include AlGaInAs, the material of the second confinement layer can include AlGaInAs, the material of the etching stop layer can include InGaAsP, the material of the grating layer can include InGaAsP, the material of the upper cover layer can include InP, and the material of the contact layer can include InGaAs. Of course, the film layers can also be made of other materials, which are not limited here.

[0050] It should be noted that the quantum well layer belongs to the aforementioned active layer and can be made of a semiconductor active material. The specific structure of the quantum well layer is not limited, for example, the quantum well layer can include a pair of quantum wells, specifically, the pair of quantum wells can include a first barrier layer, an intermediate layer and a second barrier layer arranged in a stack; or, the quantum well layer can include two pairs of quantum wells, specifically, the two pairs of quantum wells can include a first barrier layer, a first intermediate layer, a second barrier layer, a second intermediate layer and a third barrier layer arranged in a stack; of course, it can also include three pairs or more than three pairs of quantum wells, which is not limited here.

[0051] In order to further reduce the difficulty of manufacturing, optionally, in the multi-layer growth structure, in addition to the grating layer, the waveguide layer and the electrode layer, the growth structures arranged in different regions and belonging to the same layer are integrally connected. Taking the first confinement layer as an example, referring to Figure 1 It is shown that the first confinement layer 7 arranged in the laser region, the first confinement layer 7a arranged in the phase control region and the first confinement layer 7b arranged in the amplification feedback region are integrally connected, which can be formed by one preparation process, thereby further simplifying the manufacturing process.

[0052] In order to facilitate the formation of a laser transverse optical field to facilitate directional output of laser, optionally, in combination with Figure 1 and Figure 3 It is shown that in the multi-layer growth structure, the waveguide layer 11 includes three waveguide portions 110 arranged in parallel and spaced apart along a predetermined direction (the OO3 direction shown in Figure 1 It is shown that the arrangement direction (the OO1 direction shown in Figure 1 ) of the laser region A1, the phase control region A2 and the amplification feedback region A3 is perpendicular to the predetermined direction (the OO3 direction shown in Figure 1 ); grooves are arranged between adjacent waveguide portions to expose the grating layer; in the laser region, the grating at least partially overlaps with the waveguide portion located at the middle position in the direction perpendicular to the substrate. Figure 1 and Figure 3 It is shown that the waveguide layer adopts a double-groove ridge waveguide structure, of course, according to design requirements, other waveguide structures can also be used.

[0053] The above three waveguide portions, referring to Figure 3 It is shown that the width W of the waveguide portion located at the middle position along the predetermined direction (the OO3 direction shown in Figure 3 ) is less than the width W1 and W2 of the waveguide portions located at the two side positions along the predetermined direction (the OO3 direction shown in Figure 3 ), thereby more favorably preventing the occurrence of high-order transverse modes and making the laser work in a fundamental transverse mode. The widths of the waveguide portions located at the two side positions along the predetermined direction can be the same or different, which is not limited here. Figure 3 Taking the widths of the waveguide portions located at the two side positions along the predetermined direction as an example, the same is shown.

[0054] In the aforementioned laser region, the overlap of the grating and the waveguide located in the middle position along a direction perpendicular to the substrate means that: the grating overlaps with the waveguide located in the middle position along a direction perpendicular to the substrate, and in this case, the orthogonal projection of the waveguide located in the middle position onto the substrate covers the orthogonal projection of the grating onto the substrate; or, the overlap of the grating and the waveguide located in the middle position along a direction perpendicular to the substrate means that the orthogonal projection of the grating onto the substrate partially overlaps with the orthogonal projection of the waveguide located in the middle position onto the substrate.

[0055] The laser region, phase control region, and amplification feedback region operate at different currents. To facilitate individual power supply to different regions, it is optional to combine... Figure 1 , Figure 3 and Figure 4 As shown, the waveguide portion 110 includes an upper cover portion 111 and a contact portion 112, with the contact portion 112 disposed on the side of the upper cover portion 111 away from the substrate 5; wherein, the upper cover portions 111 disposed adjacently in different regions are integrally connected; and the contact portions 112 disposed adjacently in different regions are independent of each other.

[0056] The material of the top cover can include P-type InP, and the material of the contact portion can include P-type InGaAs. Of course, the top cover and the contact portion can also be made of other materials, as long as they are compatible with other film layers; no limitation is made here. For example, if the material of the top cover is P-type InP and the material of the contact portion is P-type InGaAs, the material of the substrate can include N-type InP, and the material of the buffer layer can also include N-type InP.

[0057] To better supply power to the contact portion located in the middle position, especially when the width of the contact portion located in the middle position along the preset direction is small, alternatively, refer to Figure 1 As shown, in the multilayer growth structure, the electrode layer 12 includes a first electrode 121 and a second electrode 122 that are electrically connected; the first electrode 121 covers the contact portion 112 located in the middle position, and the second electrode 122 covers a portion of either contact portion 112 located on both sides.

[0058] The first and second electrodes described above can be fabricated using the same material through a selective wet etching process; for example, a titanium (TiAu) alloy can be used. The patterns of the second electrodes in each region can be the same or different; different patterns can be used for easy differentiation.

[0059] The above amplification feedback laser can apply a current to the second electrode in the laser region, the phase control region and the amplification feedback region when working; in the case that the material of the upper cover portion comprises P-type InP, the material of the contact portion comprises P-type InGaAs, the material of the substrate comprises N-type InP, and the material of the buffer layer comprises N-type InP, the applied current is a forward current. It should be noted that the amplification feedback laser provided by the embodiment of the present application can further comprise a negative electrode layer arranged on the side of the substrate away from the buffer layer. The negative electrode layer can be arranged on the side of the substrate away from the buffer layer in an integral manner; the material of the negative electrode layer can comprise gold germanium nickel (AuGeNi) alloy, and of course can also comprise other materials, which are not limited herein.

[0060] In the amplification feedback laser provided by the embodiment of the present application, the contact portion at the intermediate position can be connected to the current through the first electrode and the second electrode, thereby further ensuring the current input of the contact portion at the intermediate position and greatly improving the quality and efficiency of the current input.

[0061] In order to ensure the electrical connection relationship between the first electrode and the second electrode, optionally, as shown in Figure 3 As shown in FIG. 1, the waveguide layer 11 in the multi-layer growth structure can further comprise a waveguide connecting portion 113, and the waveguide connecting portion 113 is connected to the adjacent waveguide portion 110; the waveguide connecting portion can further comprise an upper cover connecting portion and a contact connecting portion, and the contact connecting portion covers the upper cover connecting portion; as shown in FIG. 2, the electrode layer 12 can further comprise a connecting electrode 123, and the connecting electrode 123 covers the contact connecting portion and is connected to the first electrode 121 and the second electrode 122 respectively. Figure 1

[0062] The upper cover connecting portion and the upper cover portion can be integrally formed, the contact connecting portion and the contact portion can be integrally formed, and the connecting electrode, the first electrode and the second electrode can be integrally formed.

[0063] The embodiment of the present application further provides a preparation method of the amplification feedback laser, comprising:

[0064] S01, forming a laser region, a phase control region and an amplification feedback region.

[0065] It should be noted that the related descriptions of the laser region, the phase control region and the amplification feedback region can refer to the foregoing embodiments, which will not be described herein.

[0066] In step S01, forming the laser region comprises:

[0067] S011, forming a grating layer by using a holographic exposure and dry etching process.

[0068] ​In the prior art, the amplification feedback laser adopts a quarter wavelength phase shift grating or a gain coupled grating to prepare a distributed feedback laser. The distributed feedback laser based on the quarter wavelength phase shift grating is not easily affected by the end face reflection in the single mode state, and can work in the single mode state when the amplification feedback laser works in the non-feedback state. The intrinsic mode with the lowest threshold of the distributed feedback laser based on the gain coupled grating is unique, and the single wavelength lasing is achieved when the laser works. The single mode working state of the laser based on the grating structure is stable, and is not easily affected by the end face reflectivity. However, the quarter wavelength phase shift grating needs to be etched by an electron beam lithography (EBL) process, which has a high cost and a slow production speed. The gain coupled grating needs to be etched to the quantum well region, which is easy to introduce material damage and affect the light emitting efficiency of the laser.

[0069] Based on the above, the preparation method provided by the embodiment of the present application adopts a holographic exposure and dry etching process to form the grating layer. Compared with the electron beam exposure process for etching the grating, the production speed is faster and the cost is lower, which is beneficial to the mass production of products. At the same time, the influence on the quantum well region during the preparation of the grating is avoided, which is beneficial to the improvement of the performance of the product.

[0070] In one or more embodiments, optionally, the amplification feedback laser further includes a substrate, and the laser region, the phase control region and the amplification feedback region are integrated on the same side of the substrate; the multi-layer growth structure further includes an active layer, and the active layer is arranged between the substrate and the grating layer; the growth structures arranged in different regions and belonging to the same layer are made of the same material.

[0071] S01, forming a laser region, a phase control region and an amplification feedback region includes:

[0072] S10, forming a laser region, a phase control region and an amplification feedback region on a substrate by using the same process.

[0073] Step S10 refers to that the growth structures belonging to the same layer in the multi-layer growth structures included in the laser region, the phase control region and the amplification feedback region are prepared by using the same process. For example, the quantum well layers of the laser region, the quantum well layers of the phase control region and the quantum well layers of the amplification feedback region are formed on the substrate by using the same process.

[0074] By performing step S10, the phase control region can be prepared by using the butt joint growth process or the quantum well hybrid process, thereby greatly reducing the possibility of introducing mirror reflection in the cavity by using the butt joint growth process, further improving the yield of the device, and further simplifying the preparation process.

[0075] As used in this description, the terms "one embodiment", "an embodiment” or "one or more embodiments” mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of the phrase "in one embodiment” in various places in this description are not necessarily all referring to the same embodiment.

[0076] In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application can be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been described in detail in order not to obscure the understanding of this description.

[0077] It should be noted that the above-mentioned embodiments are merely used to illustrate the technical solutions of the present application, rather than limiting the present application; although the present application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still make modifications to the technical solutions recorded in the foregoing embodiments, or replace equivalent replacements to part of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An amplifying feedback laser characterized in that, The amplification feedback laser further comprises a substrate, and the laser region, the phase control region and the amplification feedback region are integrated on the same side of the substrate. The multi-layer growth structure further comprises an active layer, and the active layer is arranged between the substrate and the grating layer. The difference between the center wavelength of the photoluminescence spectrum of the phase control region and the lasing wavelength of the laser region is greater than a preset value.

2. The amplifying feedback laser of claim 1, wherein, The multi-layer growth structure further comprises a buffer layer, a first confinement layer, a quantum well layer, a second confinement layer, an etching stop layer, a waveguide layer and an electrode layer which are sequentially arranged on the substrate; and the grating layer is arranged between the etching stop layer and the waveguide layer. In the multi-layer growth structure, the waveguide layer comprises three waveguide portions which are arranged in parallel and at intervals along a preset direction, and the arrangement direction of the laser region, the phase control region and the amplification feedback region is perpendicular to the preset direction; a groove is arranged between adjacent waveguide portions to expose the grating layer; and in the laser region, the grating at least partially overlaps the waveguide portion located at the middle position in the direction perpendicular to the substrate.

3. The amplifying feedback laser of claim 2, wherein, The waveguide portion comprises an upper cover portion and a contact portion, and the contact portion is arranged on the side of the upper cover portion away from the substrate.

4. The amplifying feedback laser of claim 2, wherein, In the multi-layer growth structure, the electrode layer comprises a first electrode and a second electrode which are electrically connected.

5. The amplifying feedback laser of claim 4, wherein, The first electrode covers the contact portion located at the middle position, and the second electrode covers part of the area of any contact portion located at the two side positions. The amplification feedback laser further comprises a substrate, and the laser region, the phase control region and the amplification feedback region are integrated on the same side of the substrate. The multi-layer growth structure further comprises an active layer, and the active layer is arranged between the substrate and the grating layer.

7. The amplifying feedback laser of claim 6, wherein, The multi-layer growth structure further comprises a buffer layer, a first confinement layer, a quantum well layer, a second confinement layer, an etching stop layer, a waveguide layer and an electrode layer which are sequentially arranged on the substrate; and the grating layer is arranged between the etching stop layer and the waveguide layer. In the multi-layer growth structure, the waveguide layer comprises three waveguide portions which are arranged in parallel and at intervals along a preset direction, and the arrangement direction of the laser region, the phase control region and the amplification feedback region is perpendicular to the preset direction; a groove is arranged between adjacent waveguide portions to expose the grating layer; and in the laser region, the grating at least partially overlaps the waveguide portion located at the middle position in the direction perpendicular to the substrate.

8. The amplifying feedback laser of claim 7, wherein, The waveguide portion comprises an upper cover portion and a contact portion, and the contact portion is arranged on the side of the upper cover portion away from the substrate. In the multi-layer growth structure, the electrode layer comprises a first electrode and a second electrode which are electrically connected.

9. A method of producing an amplifying feedback laser as claimed in any one of claims 1-8, characterized in that The first electrode covers the contact portion located at the middle position, and the second electrode covers part of the area of any contact portion located at the two side positions. The amplification feedback laser further comprises a substrate, and the laser region, the phase control region and the amplification feedback region are integrated on the same side of the substrate. The multi-layer growth structure further comprises an active layer, and the active layer is arranged between the substrate and the grating layer. The multi-layer growth structure further comprises a buffer layer, a first confinement layer, a quantum well layer, a second confinement layer, an etching stop layer, a waveguide layer and an electrode layer which are sequentially arranged on the substrate; and the grating layer is arranged between the etching stop layer and the waveguide layer.

10. The production method according to claim 9, characterized by, In the multi-layer growth structure, the waveguide layer comprises three waveguide portions which are arranged in parallel and at intervals along a preset direction, and the arrangement direction of the laser region, the phase control region and the amplification feedback region is perpendicular to the preset direction; a groove is arranged between adjacent waveguide portions to expose the grating layer; and in the laser region, the grating at least partially overlaps the waveguide portion located at the middle position in the direction perpendicular to the substrate. The waveguide portion comprises an upper cover portion and a contact portion, and the contact portion is arranged on the side of the upper cover portion away from the substrate. In the multi-layer growth structure, the electrode layer comprises a first electrode and a second electrode which are electrically connected. The first electrode covers the contact portion located at the middle position, and the second electrode covers part of the area of any contact portion located at the two side positions. The laser region, the phase control region, and the amplification feedback region are formed on the substrate using the same process. The laser region, the phase control region, and the amplification feedback region are formed on the substrate using the same process.

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