An experimental method for measuring the electron-hole recombination emission rate

Abstract

This invention discloses an experimental method for measuring the electron-hole recombination emission rate. The apparatus for this method includes a laser chip (with an anti-reflection coating on only one end of its horizontal two-sided end face), a plano-convex lens, a polarizer, a fiber optic coupler, an optical fiber, and a spectrometer. The plano-convex lens, polarizer, plano-convex lens, and fiber optic coupler are placed sequentially on the same horizontal line on both sides of the chip. The fiber optic coupler is connected to the spectrometer via an optical fiber. First, energy is applied to the laser chip, causing it to emit light from both sides. The spectra from both sides are focused onto the fiber optic coupler by the plano-convex lens and then transmitted to the spectrometer via the optical fiber. By rotating the polarizer, different polarization spectra can be selected to obtain specific spectral images under transverse electric / magnetic field modes. Finally, by substituting the spectral data from both ends into the established formula, the electron-hole recombination rate of the laser chip can be calculated.

Description

Technical Field

[0001] This invention relates to the field of optics, and in particular to an experimental method for measuring the electron-hole recombination emission rate. Background Technology

[0002] Measuring the electron-hole recombination rate of experimental subjects is a necessary condition for studying laser physics, and measuring the electron-hole recombination rate of materials is an important part of studying luminescence properties. With the development of materials science and specialized manufacturing technologies, we need to improve the luminescence performance of materials based on their fundamental property data, and to manufacture high-performance lasers through specialized processes.

[0003] Existing methods for obtaining electron-hole recombination rates typically employ theoretical simulations. However, theoretical simulations usually calculate recombination rates under ideal conditions, resulting in numerous theoretical approximations. Furthermore, they cannot obtain accurate recombination rates, and due to the special nature of the measurement materials, the experimental costs are relatively high and the error tolerance is low. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an experimental method for measuring the electron-hole recombination emission rate, which addresses the shortcomings of the prior art.

[0005] To achieve the above objectives, the specific technical solution of the experimental method for measuring the electron-hole recombination emission rate of the present invention is as follows:

[0006] An experimental method for measuring the electron-hole recombination emission rate includes the following steps:

[0007] S1. A first plano-convex lens, a first polarizer, a third plano-convex lens, and a first fiber coupler are sequentially arranged on one side of the chip. The first fiber coupler is connected to a first spectrometer through a first optical fiber. An anti-reflection coating is deposited on the end face of the chip near the first plano-convex lens.

[0008] On the other side of the chip, a second plano-convex lens, a second polarizer, a fourth plano-convex lens, and a second fiber optic coupler are arranged in sequence. The second fiber optic coupler is connected to the second spectrometer through a second optical fiber.

[0009] S2. Apply excitation energy to the chip through the exciter to provide power for the chip to emit light;

[0010] S3. Light emitted from the side of the chip coated with the antireflection film is first converted into parallel light by a first plano-convex lens. The parallel light is then converged to a first fiber coupler by a first polarizer and a third plano-convex lens. The first fiber coupler guides the light into a first optical fiber, and the optical signal is then transmitted through the first optical fiber to a first spectrometer. The spectrum I collected from the side of the chip coated with the antireflection film... PL1The formula relating to the chip is as follows:

[0011]

[0012] Where Isp is the spontaneous emission rate, G is the mode gain of the chip, R is the reflectivity of the uncoated end of the chip, and L is the length of the chip.

[0013] The light emitted from the other side of the chip is first parallelized by a second plano-convex lens. This parallel light then passes through a second polarizer and a fourth plano-convex lens before converging at a second fiber coupler. The second fiber coupler guides the light into a second optical fiber, which then transmits the optical signal to a second spectrometer. The spectrum I is collected from the other natural end face of the chip. PL2 The formula relating to the chip is as follows:

[0014]

[0015] Where Isp is the spontaneous emission rate, G is the mode gain of the chip, R is the reflectivity of the uncoated end of the chip, and L is the length of the chip.

[0016] S4. Rotate the first polarizer and the second polarizer, select the transverse electric field mode (TE mode) or the transverse magnetic field mode (TM mode) polarization spectrum, use the first spectrometer to record the spectrum radiated on the side of the chip with the anti-reflection coating, and use the second spectrometer to record the polarization spectrum radiated on the side without the anti-reflection coating.

[0017] By simultaneously solving equations 1 and 2 above, we obtain:

[0018]

[0019]

[0020] And the inversion factor P F Electron-hole recombination emission rate r sp The formula for (hv) is as follows:

[0021]

[0022]

[0023] ;

[0024] Where C: scaling factor; Γ: constraint factor; n: refractive index of laser material; h: Planck's constant; v: photon frequency; Reduced Planck constant; c: speed of light in vacuum; m r : Effective mass of electron-hole pair; u: Step function; E g : Band gap; τ r: Radiation recombination lifetime; d: Laser material thickness;

[0025] Substituting equations 3 and 4 into equations 5, 6, and 7, we obtain the electron-hole recombination emission rate r. sp The derivation formula for (hv) is as follows:

[0026]

[0027] S5. The polarization spectral data I collected by the first and second spectrometers on both sides of the chip PL1 and I PL1 The recombination luminescence rate r of electrons and holes sp The derivation formula of (hv) is used to calculate the recombination rate of electrons and holes in the laser chip under TE and TM modes, respectively.

[0028] Furthermore, step S1 is specifically implemented through the following steps:

[0029] S1-1. A first plano-convex lens, a first polarizer, a third plano-convex lens, and a first fiber optic coupler are sequentially arranged on one side of the chip; a second plano-convex lens, a second polarizer, a fourth plano-convex lens, and a second fiber optic coupler are sequentially arranged on the other side of the chip.

[0030] S1-2, The distance L1 between the first plano-convex lens and the chip end face is determined by the focal length f1 of the first plano-convex lens, i.e., L1 = f1; the distance L2 between the second plano-convex lens and the chip end face is determined by the focal length f2 of the second plano-convex lens, i.e., L2 = f2; the first fiber coupler and the second fiber coupler are located at the focal points of the third plano-convex lens and the fourth plano-convex lens, respectively; the first polarizer is located between the third plano-convex lens and the first plano-convex lens; and the second polarizer is located between the second plano-convex lens and the fourth plano-convex lens.

[0031] Furthermore, step S2 is specifically implemented through the following steps:

[0032] S2-1 provides energy to the chip, which can be light, electricity, or chemical energy. After the chip receives energy, its two ends will radiate light.

[0033] Furthermore, step S3 is specifically implemented through the following steps:

[0034] S3-1. After light is emitted from the end of the chip coated with an anti-reflection film, it first passes through the first plano-convex lens. The first plano-convex lens is used to receive the light emitted by the chip and convert it into parallel light to the first polarizing mirror. The parallel light is converged to the first fiber coupler through the first polarizing mirror and the third plano-convex lens. The first fiber coupler is used to introduce the light into the first optical fiber, and then the optical signal is transmitted into the first spectrometer through the first optical fiber.

[0035] S3-2. After the light is emitted from the uncoated end of the chip, it first passes through the second plano-convex lens. The second plano-convex lens is used to receive the light emitted by the chip and convert it into parallel light to the second polarizer. The parallel light is converged by the second polarizer and the fourth plano-convex lens to the second fiber coupler. The second fiber coupler is used to introduce the light into the second optical fiber, and then the optical signal is transmitted into the second spectrometer through the second optical fiber.

[0036] Furthermore, step S4 is specifically implemented through the following steps:

[0037] S4-1. Manually adjust the first and second polarizers on both sides of the chip. Observe the images displayed by the first and second spectrometers. When the peak value (highest value) is reached, it is the TE (transverse electric field) mode. The angles of the first and second polarizers should be kept consistent.

[0038] S4-2. Once the spectral image reaches its peak, manually adjust the angles of the first and second polarizers on both sides of the chip, rotating them both by 90°. This is the TM (Transverse Magnetic Field) mode, where the angles of the first and second polarizers remain consistent.

[0039] S4-3. After receiving the light passing through the first plano-convex lens, the first polarizer, and the third plano-convex lens, the first fiber optic coupler on one side of the chip transmits the light to the first spectrometer through the first optical fiber.

[0040] The second fiber optic coupler on the other side of the chip receives the light passing through the second plano-convex lens, the second polarizer, and the fourth plano-convex lens, and then transmits the light to the second spectrometer through the second fiber optic cable.

[0041] S4-4, the first spectrometer, and the second spectrometer receive light and simultaneously display spectral images in TE or TM mode.

[0042] Furthermore, step S5 is specifically implemented through the following steps:

[0043] S5-1, The spectral data recorded by the first spectrometer is labeled as I. PL1 The spectral data recorded by the second spectrometer is labeled as I. PL2 By substituting the TE and TM polarization spectral data sequentially into the formula for the electron-hole recombination emission rate, the electron-hole recombination emission rate of the chip in TE and TM modes can be calculated. The electron-hole recombination emission rate at different injection energies can be obtained by changing the injection power of the excitation energy. The derived formula for the electron-hole recombination emission rate is as follows:

[0044]

[0045] Where R: reflectivity at both ends of the chip; I PL: Spectral data; C: Scale factor; Γ: Restriction factor (related to laser structure); n: Refractive index of laser material; h: Planck's constant; ν: Photon frequency; Reduced Planck constant; c: speed of light in vacuum; m r : Effective mass of electron-hole pair; u: Step function; E g : Band gap; τ r : Radiation recombination lifetime; d: Laser material thickness; G: Mode gain.

[0046] Compared with the prior art, the beneficial effects of the present invention are: the method of the present invention overcomes the shortcomings of the prior art, such as large computational load and poor real-time performance, and makes the obtained electron-hole recombination rate more intuitive and accurate, thereby realizing the effective measurement of the emission rate of laser chip. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0049] Figure 2 The images show the transverse electric field (TE) mode spectra obtained from both sides of the chip under different excitation energy injections; the solid line represents the TE spectrum obtained from the antireflection coating end under different excitation energy injections. PL1 The dashed line represents the TE spectrum curves collected from the uncoated end under different excitation energies. PL2 The excitation energy injection values ​​for the red, blue, green, and black curves are 4.8 × 10⁻⁶. 17 cm -3 4.5×10 17 cm -3 4.2×10 17 cm -3 and 3.6×10 17 cm -3 ;

[0050] Figure 3 The images show the transverse magnetic field (TM) mode spectra obtained from both sides of the chip under different excitation energy injections; the solid line represents the TM spectrum obtained from the antireflection coating end under different excitation energy injections. PL1 The dashed line represents the TM spectrum curves collected from the uncoated end under different excitation energy injections. PL2The excitation energy injection values ​​for the red, blue, green, and black curves are 4.8 × 10⁻⁶. 17 cm -3 4.5×10 17 cm -3 4.2×10 17 cm -3 and 3.6×10 17 cm -3 ;

[0051] Figure 4 The graph shows the electron-hole recombination emission rate curves under different excitation energy injections in TE and TM modes, obtained from the experiment. The solid line represents the calculated electron-hole recombination emission rate curve in TE mode under different excitation energy injections, and the dashed line represents the calculated electron-hole recombination emission rate curve in TM mode under different excitation energy injections. The excitation energy injection values ​​for the red, blue, green, and black curves are 4.8 × 10⁻⁶, respectively. 17 cm -3 4.5×10 17 cm -3 4.2×10 17 cm -3 and 3.6×10 17 cm -3 ;

[0052] The markings in the diagram are as follows: 1. First fiber optic coupler; 2. Second fiber optic coupler; 3. First spectrometer; 4. Second spectrometer; 5. Chip; 6. Anti-reflection coating; 7. First optical fiber; 8. Second optical fiber; 9. Exciter; L1. First plano-convex lens; L2. Second plano-convex lens; L3. Third plano-convex lens; L4. Fourth plano-convex lens; P1. First polarizer; P2. Second polarizer. Detailed Implementation

[0053] To better understand the purpose, structure, and function of this invention, the following detailed description of an experimental method for measuring the electron-hole recombination emission rate is provided in conjunction with the accompanying drawings and specific preferred embodiments.

[0054] In the description of this invention, it should be understood that the terms "left side," "right side," "upper part," "lower part," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. "First," "second," etc., do not indicate the importance of the components, and therefore should not be construed as a limitation of this invention. The specific dimensions used in this embodiment are only for illustrating the technical solution and do not limit the scope of protection of this invention.

[0055] Example 1:

[0056] Please see Figure 1 This invention provides a technical solution: an experimental method for measuring the electron-hole recombination emission rate, comprising the following steps:

[0057] S1. A first plano-convex lens L1, a first polarizer P1, a third plano-convex lens L3, and a first fiber optic coupler 1 are sequentially arranged on one side of the chip 5. The first fiber optic coupler 1 is connected to the first spectrometer 3 through a first fiber optic cable 7. An anti-reflection coating 6 is deposited on the end face of the chip 5 near the first plano-convex lens L1.

[0058] On the other side of chip 5, a second plano-convex lens L2, a second polarizer P2, a fourth plano-convex lens L4, and a second fiber optic coupler 2 are arranged in sequence. The second fiber optic coupler 2 is connected to the second spectrometer 4 through a second fiber optic cable 8.

[0059] Among them, the first fiber coupler 1, the second fiber coupler 2, the chip 5, the first plano-convex lens L1, the second plano-convex lens L2, the third plano-convex lens L3, the fourth plano-convex lens L4, the first polarizer P1, and the second polarizer P2 are on the same horizontal line.

[0060] Specifically, the chip used in this experiment is an InGaAs / GaAs quantum well structure with dimensions of 3mm x 1.5mm; the plano-convex lenses L1-L4 are K9 plano-convex lenses, model OLB25-100 with a focal length of 100mm; the polarizers P1 and P2 are model SPFN-30C-26; the fiber couplers 1 and 2 are model APFC-5T-FC; and the first and second spectrometers and fiber optic kits are model HR-2XR300-50.

[0061] S2. Apply excitation energy to chip 5 through exciter 9 to provide power for chip to emit light, and light is radiated from both sides of the chip.

[0062] Specifically, this experiment uses an 808nm fiber-coupled laser to apply energy to chip 5, model LWIRL808-40W-F, with a power of 40W (0-Pmax adjustable);

[0063] S3. The light emitted from one side of chip 5 is first parallelized by the first plano-convex lens L1. The parallel light is then converged by the first polarizer P1 and the third plano-convex lens L3 to the first fiber coupler 1. The first fiber coupler 1 guides the light into the first optical fiber 7, and the optical signal is then transmitted through the first optical fiber 7 to the first spectrometer 3. The spectrum I is collected from the side of chip 5 coated with the antireflection film 6. PL1 The formula relating to chip 5 is as follows:

[0064]

[0065] Where Isp is the spontaneous emission rate, G is the mode gain of chip 5, R is the reflectivity of the uncoated end of chip 5, and L is the length of chip 5.

[0066] The light emitted from the other side of chip 5 is first parallelized by the second plano-convex lens L2. The parallel light is then converged by the second polarizer P2 and the fourth plano-convex lens L4 to the second fiber coupler 2. The second fiber coupler 2 guides the light into the second optical fiber 8, and the optical signal is then transmitted through the second optical fiber 8 to the second spectrometer 4. The spectrum I is collected from the other natural end face of chip 5. PL2 The formula relating to chip 5 is as follows:

[0067]

[0068] Where Isp is the spontaneous emission rate, G is the mode gain of chip 5, R is the reflectivity of the uncoated end of chip 5, and L is the length of chip 5.

[0069] S4. Rotate the first polarizer P1 and the second polarizer P2, select the transverse electric field mode (TE mode) or transverse magnetic field mode (TM mode) polarization spectrum, use the first spectrometer 3 to record the spectrum radiated on the side of the chip 5 with the anti-reflection coating 6, and the second spectrometer 4 to record the polarization spectrum radiated on the side without the anti-reflection coating.

[0070] By simultaneously solving equations 1 and 2 above, we obtain:

[0071]

[0072]

[0073] And the inversion factor P F Electron-hole recombination emission rate r sp The formula for (hv) is as follows:

[0074]

[0075]

[0076]

[0077] Where C: scaling factor; Γ: constraint factor; n: refractive index of laser material; h: Planck's constant; ν: photon frequency; Reduced Planck constant; c: speed of light in vacuum; m r : Effective mass of electron-hole pair; u: Step function; E g : Band gap; τ r : Radiation recombination lifetime; d: Laser material thickness;

[0078] Substituting equations 3 and 4 into equations 5, 6, and 7, we obtain the electron-hole recombination emission rate r. sp The derivation formula for (hv) is as follows:

[0079]

[0080] Specifically, this experiment used TE and TM spectral data acquired by a spectrometer. PL1 and I PL1 All were generated using Origin drawing software, such as Figure 2 and Figure 3 As shown;

[0081] S5. The polarization spectral data I collected by the first spectrometer 3 and the second spectrometer 4 on both sides of the chip 5 are... PL1 and I PL1 The recombination luminescence rate r of electrons and holes sp The derivation formula of (hv) is used to calculate the recombination emission rate curves of electron-hole laser chips in TE and TM modes, respectively.

[0082] Specifically, the electron-hole recombination emission rate curves r obtained in this experiment under TE and TM modes are shown. sp (hv) were all generated using Origin drawing software, such as Figure 4 As shown.

[0083] Furthermore, step S1 is specifically implemented through the following steps:

[0084] S1-1. A first plano-convex lens L1, a first polarizer P1, a third plano-convex lens L3, and a first fiber optic coupler 1 are sequentially arranged on one side of the chip 5; a second plano-convex lens L2, a second polarizer P2, a fourth plano-convex lens L4, and a second fiber optic coupler 2 are sequentially arranged on the other side of the chip 5.

[0085] S1-2, The distance L1 between the first plano-convex lens L1 and the end face of the chip 5 is determined by the focal length f1 of the first plano-convex lens L1, i.e., L1 = f1; The distance L2 between the second plano-convex lens L2 and the end face of the chip 5 is determined by the focal length f2 of the second plano-convex lens L2, i.e., L2 = f2; The first fiber coupler 1 and the second fiber coupler 2 are located at the focal points of the third plano-convex lens L3 and the fourth plano-convex lens L4, respectively; The first polarizer P1 is located between the third plano-convex lens L3 and the first plano-convex lens L1; The second polarizer P2 is located between the second plano-convex lens L2 and the fourth plano-convex lens L4.

[0086] Furthermore, step S2 is specifically implemented through the following steps:

[0087] S2-1 provides energy to chip 5. This energy can be light, electricity, or chemical energy. After receiving energy, chip 5 will radiate light from both ends.

[0088] Furthermore, step S3 is specifically implemented through the following steps:

[0089] S3-1. After light is emitted from the end of chip 5 coated with antireflective film 6, it first passes through the first plano-convex lens L1. The first plano-convex lens L1 is used to receive the light emitted by chip 5 and convert it into parallel light to the first polarizer P1. The parallel light is converged to the first fiber coupler 1 through the first polarizer P1 and the third plano-convex lens L3. The first fiber coupler 1 is used to introduce the light into the first fiber 7, and then the optical signal is transmitted into the first spectrometer 3 through the first fiber 7.

[0090] S3-2. After the light is emitted from the uncoated end of the chip 5, it first passes through the second plano-convex lens L2. The second plano-convex lens L2 is used to receive the light emitted by the chip 5 and convert it into parallel light to the second polarizer P2. The parallel light is converged to the second fiber coupler 2 through the second polarizer P2 and the fourth plano-convex lens L4. The second fiber coupler 2 is used to introduce the light into the second fiber 8, and then the optical signal is transmitted into the second spectrometer 4 through the second fiber 8.

[0091] Furthermore, step S4 is specifically implemented through the following steps:

[0092] S4-1. Manually adjust the first polarizer P1 and the second polarizer P2 on both sides of the chip 5. Observe the images displayed by the first spectrometer 3 and the second spectrometer 4. When the peak value (highest value) is reached, it is the TE (transverse electric field) mode. The angles of the first polarizer P1 and the second polarizer P2 should be kept consistent.

[0093] S4-2. With the spectral image reaching its peak, manually adjust the angles of the first polarizer P1 and the second polarizer P2 on both sides of the chip 5, rotating them both by 90°. This is the TM (Transverse Magnetic Field) mode, where the angles of the first polarizer P1 and the second polarizer P2 remain consistent.

[0094] After receiving light through the first plano-convex lens L1, the first polarizer P1, and the third plano-convex lens L3, the first fiber coupler 1 on the S4-3 and chip 5 side transmits the light to the first spectrometer 3 through the first optical fiber 7.

[0095] After receiving the light through the second plano-convex lens L2, the second polarizer P2, and the fourth plano-convex lens L4, the second fiber coupler 2 on the other side of chip 5 transmits the light to the second spectrometer 4 through the second fiber 8.

[0096] After receiving light, S4-4, the first spectrometer 3, and the second spectrometer 4 simultaneously display spectral images in TE or TM mode.

[0097] Furthermore, step S5 is specifically implemented through the following steps:

[0098] S5-1, The spectral data recorded by the first spectrometer 3 is labeled as I. PL1 The spectral data recorded by the second spectrometer 4 is labeled as I. PL2 By substituting the TE and TM polarization spectral data into the formula for the recombination emission rate of electrons and holes, the recombination emission rate of electrons and holes in chip 5 under TE and TM modes can be calculated. By changing the injection power of the excitation energy, the recombination emission rate of electrons and holes in chip 5 under different injection energies can be obtained. The derivation formula for the recombination emission rate of electrons and holes is as follows:

[0099]

[0100] Where R: reflectivity at both ends of the chip; I PL : Spectral data; C: Scale factor; Γ: Restriction factor (related to laser structure); n: Refractive index of laser material; h: Planck's constant; ν: Photon frequency; Reduced Planck constant; c: speed of light in vacuum; m r : Effective mass of electron-hole pair; u: Step function; E g : Band gap; τ r : Radiation recombination lifetime; d: Laser material thickness; G: Mode gain.

[0101] Specifically, the injected carrier concentrations of the excitation energy used in this experiment were 3.6×10¹⁷cm⁻³, 4.2×10¹⁷cm⁻³, 4.5×10¹⁷cm⁻³ and 4.8×10¹⁷cm⁻³, respectively.

[0102] Working principle:

[0103] The experimental method of this invention involves an apparatus including a laser chip (one side of which is coated with an antireflective film), a plano-convex lens, a polarizer, a fiber optic coupler, an optical fiber, and a spectrometer. The plano-convex lens, polarizer, plano-convex lens, and fiber optic coupler are placed sequentially on the same horizontal line on both sides of the chip.

[0104] This invention places a plano-convex lens, a polarizer, another plano-convex lens, and an optical fiber coupler on both sides of the chip in sequence, and connects the optical fiber coupler to a spectrometer with an optical fiber. When energy is applied to the chip, the chip will radiate light outward. The light emitted from both sides of the chip is collimated and focused by the plano-convex lens onto the optical fiber coupler, and then guided into the spectrometer for collection and measurement through the optical fiber. By adjusting the angle of the polarizer, the TE / TM mode conversion is achieved. Finally, the data measured by the spectrometer is substituted into the recombination rate formula to calculate the electron-hole recombination rate.

[0105] It is understood that the present invention has been described through some embodiments, and those skilled in the art will recognize that various changes or equivalent substitutions can be made to these features and embodiments without departing from the spirit and scope of the invention. Furthermore, under the teachings of the present invention, these features and embodiments can be modified to adapt to specific situations and materials without departing from the spirit and scope of the invention. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the protection scope of the present invention.

Claims

1. An experimental method for measuring the electron-hole recombination emission rate, characterized in that, Includes the following steps: S1. A first plano-convex lens (L1), a first polarizer (P1), a third plano-convex lens (L3), and a first fiber coupler (1) are sequentially arranged on one side of the chip (5). The first fiber coupler (1) is connected to the first spectrometer (3) through a first fiber (7). The end face of the chip (5) near the first plano-convex lens (L1) is coated with an anti-reflection film (6). On the other side of the chip (5), a second plano-convex lens (L2), a second polarizer (P2), a fourth plano-convex lens (L4), and a second fiber optic coupler (2) are arranged in sequence. The second fiber optic coupler (2) is connected to the second spectrometer (4) through a second fiber optic cable (8). S2. Apply excitation energy to the chip (5) through the exciter (9) to provide power for the chip to emit light; S3, the light emitted from the side of the chip (5) coated with the anti-reflective film (6) first passes through the first plano-convex lens (L1) to become parallel light, the parallel light passes through the first polarizer (P1) and the third plano-convex lens (L3) to converge to the first fiber coupler (1), the light is introduced into the first optical fiber (7) by using the first fiber coupler (1), and the light signal is conducted into the first optical spectrometer (3) through the first optical fiber (7), and the spectrum I collected from the side of the chip (5) coated with the anti-reflective film (6) PL1 The relationship formula with the chip (5) is as follows: Formula 1: Where Isp is the spontaneous emission rate, G is the mode gain of the chip (5), R is the reflectivity of the uncoated end of the chip (5), and L is the length of the chip (5). The light emitted from the other side of the chip (5) is first changed into parallel light by the second plano-convex lens (L2), and the parallel light is converged to the second fiber coupler (2) by the second polarizer (P2) and the fourth plano-convex lens (L4). The light is introduced into the second optical fiber (8) by the second fiber coupler (2), and the light signal is conducted into the second optical spectrometer (4) by the second optical fiber (8). The spectrum I collected from the other natural end face of the chip (5) is PL2 The relationship formula with the chip (5) is as follows: Formula 2: Where Isp is the spontaneous emission rate, G is the mode gain of the chip (5), R is the reflectivity of the uncoated end of the chip (5), and L is the length of the chip (5). S4. Rotate the first polarizer (P1) and the second polarizer (P2), select the polarization spectrum in TE mode or TM mode, and use the first spectrometer (3) to record the spectrum radiated on the side of the chip (5) with the anti-reflection coating (6), and the second spectrometer (4) to record the polarization spectrum radiated on the side without the anti-reflection coating. By simultaneously solving equations 1 and 2 above, we obtain: Formula 3: Formula 4: The reverse factor P F And electron hole recombination rate r sp The formula of (hv) is as follows: Formula 5: Formula Six: Formula 7: Where C: scaling factor; Γ: constraint factor; n: refractive index of laser material; h: Planck's constant; v: photon frequency; Reduced Planck constant; c: speed of light in vacuum; m r : Effective mass of electron-hole pair; u: Step function; E g : Band gap; τ r : Radiation recombination lifetime; d: Laser material thickness; Substituting equations 3 and 4 into equations 5, 6, and 7, we obtain the electron-hole recombination emission rate r. sp The derivation formula for (hv) is as follows: S5. The polarization spectral data on both sides of the chip (5) collected by the first spectrometer (3) and the second spectrometer (4) are I PL1 and I PL1 The recombination luminescence rate r of electrons and holes sp The derivation formula of (hv) is used to calculate the recombination rate of electrons and holes in the laser chip under TE and TM modes, respectively.

2. The experimental method for measuring the electron-hole recombination emission rate according to claim 1, characterized in that, Step S1 is implemented through the following steps: S1-1. A first plano-convex lens (L1), a first polarizer (P1), a third plano-convex lens (L3), and a first fiber optic coupler (1) are arranged sequentially on one side of the chip (5); a second plano-convex lens (L2), a second polarizer (P2), a fourth plano-convex lens (L4), and a second fiber optic coupler (2) are arranged sequentially on the other side of the chip (5). S1-2, The distance L1 between the first plano-convex lens (L1) and the end face of the chip (5) is determined by the focal length f1 of the first plano-convex lens (L1), i.e., L1 = f1; The distance L2 between the second plano-convex lens (L2) and the end face of the chip (5) is determined by the focal length f2 of the second plano-convex lens (L2), i.e., L2 = f2; The first fiber coupler (1) and the second fiber coupler (2) are located at the focal points of the third plano-convex lens (L3) and the fourth plano-convex lens (L4) respectively; The first polarizer (P1) is located between the third plano-convex lens (L3) and the first plano-convex lens (L1); The second polarizer (P2) is located between the second plano-convex lens (L2) and the fourth plano-convex lens (L4).

3. The experimental method for measuring the electron-hole recombination emission rate according to claim 1 or 2, characterized in that, Step S2 is implemented through the following steps: S2-1. Provide energy to the chip (5). This energy can be light, electricity, or chemical energy. After the chip (5) receives energy, both ends will emit light.

4. The experimental method for measuring the electron-hole recombination emission rate according to claim 1, characterized in that, Step S3 is implemented through the following steps: S3-1. After light is emitted from one end of the chip (5) coated with an anti-reflection film (6), it first passes through the first plano-convex lens (L1). The first plano-convex lens (L1) is used to receive the light emitted by the chip (5) and convert it into parallel light to the first polarizer (P1). The parallel light is converged to the first fiber coupler (1) through the first polarizer (P1) and the third plano-convex lens (L3). The light is introduced into the first fiber (7) through the first fiber coupler (1), and then the light signal is transmitted into the first spectrometer (3) through the first fiber (7). S3-2. After the light is emitted from the uncoated end of the chip (5), it first passes through the second plano-convex lens (L2). The second plano-convex lens (L2) is used to receive the light emitted by the chip (5) and convert it into parallel light to the second polarizer (P2). The parallel light is converged to the second fiber coupler (2) through the second polarizer (P2) and the fourth plano-convex lens (L4). The light is introduced into the second fiber (8) through the second fiber coupler (2), and then the light signal is transmitted into the second spectrometer (4) through the second fiber (8).

5. The experimental method for measuring the electron-hole recombination emission rate according to claim 1, characterized in that, Step S4 is implemented through the following steps: S4-1. Manually adjust the first polarizer (P1) and the second polarizer (P2) on both sides of the chip (5). Observe the images displayed by the first spectrometer (3) and the second spectrometer (4). When the peak value (highest value) is reached, it is the TE (transverse electric field) mode. The angles of the first polarizer (P1) and the second polarizer (P2) should be kept consistent. S4-2. Based on the peak value of the spectral image, manually adjust the angles of the first polarizer (P1) and the second polarizer (P2) on both sides of the chip (5) by rotating them by 90°. This is the TM (lateral magnetic field) mode. The angles of the first polarizer (P1) and the second polarizer (P2) remain consistent. S4-3, the first fiber optic coupler (1) on the chip (5) side receives light through the first plano-convex lens (L1), the first polarizer (P1), and the third plano-convex lens (L3), and then transmits the light to the first spectrometer (3) through the first fiber optic cable (7). After receiving the light through the second plano-convex lens (L2), the second polarizer (P2) and the fourth plano-convex lens (L4) on the other side of the chip (5), the second fiber coupler (2) transmits the light to the second spectrometer (4) through the second fiber (8); After receiving light, S4-4, the first spectrometer (3) and the second spectrometer (4) simultaneously display spectral images in TE or TM mode.

6. The experimental method for measuring the electron-hole recombination emission rate according to claim 1, characterized in that, Step S5 is implemented through the following steps: S5-1, The spectral data recorded by the first spectrometer (3) is labeled as I. PL1 The spectral data recorded by the second spectrometer (4) is labeled as I. PL2 By substituting the TE and TM polarization spectral data into the formula for the recombination emission rate of electrons and holes, the recombination emission rate of the chip (5) in TE and TM modes can be calculated. By changing the injection power of the excitation energy, the recombination emission rate of the chip (5) under different injection energies can be obtained. The derivation formula for the recombination emission rate of electrons and holes is as follows: Where R: reflectivity at both ends of the chip; I PL : Spectral data; C: Scale factor; Γ: Limitation factor; n: Refractive index of laser material; h: Planck's constant; v: Photon frequency; Reduced Planck constant; c: speed of light in vacuum; m r : Effective mass of electron-hole pair; u: Step function; E g : Band gap; τ r : Radiation recombination lifetime; d: Laser material thickness; G: Mode gain.

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