Integrated chip, method for manufacturing integrated chip, and semiconductor random laser

Abstract

The application belongs to the technical field of semiconductor lasers, and discloses an integrated chip, a manufacturing method of the integrated chip and a semiconductor random laser. The integrated chip comprises ring mirrors, the ring mirror comprises a ring mirror waveguide and a directional coupler, the two ends of the ring mirror waveguide are connected with the ports on the corresponding sides of the directional coupler, the number of the ring mirrors is set to be multiple, the multiple ring mirrors are connected in sequence to provide random feedback, two adjacent ring mirrors are connected through a connecting waveguide, and the ring mirror located at one end is connected with a light output waveguide on the side away from the adjacent ring mirror. The semiconductor random laser comprises the integrated chip, and further comprises a semiconductor optical amplifier, the semiconductor optical amplifier is connected with the light output waveguide of the integrated chip, and the output end of the semiconductor optical amplifier is provided with a reflection structure corresponding to the light output waveguide. The integrated chip provided by the application is used as the feedback structure of the semiconductor random laser, has the advantages of simple structure, high integration, and greater reflection bandwidth and higher feedback strength.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor laser devices, and in particular to an integrated chip, a method for manufacturing the integrated chip, and a semiconductor random laser. Background Art

[0002] Random lasers have a unique cavity structure, and the feedback structure they use is randomly distributed in space, making them easier to manufacture than traditional lasers. The random lasers they produce also have unique optical properties. Currently, random lasers have attracted widespread research interest from researchers both domestically and internationally, and many types of random lasers have been reported. Random lasers have also been widely reported to be applied in many fields, including optical sensing, optical communications, and optical imaging, and have achieved better performance than traditional lasers in many aspects.

[0003] The feedback structures of existing random lasers are mainly divided into two categories: those using Rayleigh scattering and those using random gratings. Rayleigh scattering-based lasers can achieve a wide operating bandwidth, but their feedback strength is extremely weak (less than 0.1%), and random lasers are large and have poor integration. Random lasers using random gratings, while providing random feedback through the grating, can achieve high feedback strength. However, the operating bandwidth of random gratings is typically on the nanometer scale, which limits the operational wavelength range of such lasers. Furthermore, on-chip fabrication of random gratings requires high etching precision and low support efficiency.

[0004] Therefore, designing a feedback structure for random lasers that has high integration, high feedback intensity, and large reflection bandwidth has become the current direction of efforts. Summary of the Invention

[0005] The object of the present invention is to provide an integrated chip which serves as a feedback structure of a semiconductor random laser and has a simple structure, strong integration, a larger reflection bandwidth and a higher feedback intensity.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] An integrated chip, comprising:

[0008] The loop mirror includes a loop mirror waveguide and a directional coupler. The two ends of the loop mirror waveguide are respectively connected to the ports on the corresponding sides of the directional coupler. The number of loop mirrors is set to multiple, and the multiple loop mirrors are connected in sequence to provide random feedback; wherein,

[0009] Two adjacent loop mirrors are connected via a connecting waveguide, and the loop mirror at one end is connected to a light transmission waveguide on a side away from the adjacent loop mirror.

[0010] Optionally, the lengths of the plurality of loop mirror waveguides are set to different preset values, so that the plurality of loop mirrors connected in sequence provide random feedback.

[0011] Optionally, among the multiple loop mirrors, the length of the connecting waveguide between every two adjacent loop mirrors is set to a different preset value, so that the multiple loop mirrors connected in sequence provide random feedback.

[0012] Optionally, the reflectivity of the ring mirror is ≤5%.

[0013] Optionally, the number of the annular mirrors is set to 7-30.

[0014] The present invention also provides a method for manufacturing an integrated chip, which has a simple structure, is reliable and practical, and has strong integration.

[0015] A method for manufacturing an integrated chip, used to manufacture any of the above integrated chips, characterized in that the method for manufacturing the integrated chip comprises the following steps:

[0016] S100, fabricating a mask on an SOI wafer, the SOI wafer including a silicon substrate, a silicon dioxide lower cladding layer, and a top silicon layer, performing a photolithography or etching process on the top silicon layer to form a loop mirror waveguide, a directional coupler, a connecting waveguide, and a light transmission waveguide, and connecting a directional coupler at both ends of each loop mirror waveguide to form a loop mirror; providing a plurality of loop mirrors, and sequentially connecting the plurality of loop mirrors to provide random feedback; wherein,

[0017] Two adjacent loop mirrors are connected via a connecting waveguide, and the loop mirror at one end is connected to a light transmission waveguide on the side away from the adjacent loop mirror;

[0018] S200, depositing and growing a silicon dioxide upper cladding layer on the top silicon layer to form an integrated chip.

[0019] The present invention also provides a semiconductor random laser with a simple structure, strong integration, larger reflection bandwidth and higher feedback intensity.

[0020] A semiconductor random laser, comprising the above-mentioned integrated chip, further comprising:

[0021] The semiconductor optical amplifier is connected to the light transmission waveguide of the integrated chip, and the output end of the semiconductor optical amplifier is provided with a reflection structure corresponding to the light transmission waveguide.

[0022] Optionally, a wedge-shaped spot converter is further included, which is arranged on the light transmission waveguide and located on a side of the semiconductor optical amplifier away from the reflective structure.

[0023] Optionally, the reflective structure is configured as a waveguide grating or a reflective film.

[0024] Optionally, the reflectivity of the reflective structure is set to 1%-50%.

[0025] Beneficial effects:

[0026] The integrated chip provided by the present invention is compared to conventional Rayleigh scattering. When multiple loop mirrors are cascaded, the light intensity reflected by each loop mirror will interfere with each other, and the light of a specific wavelength will interfere with each other. Therefore, as the number of loop mirrors increases, the reflectivity of the loop mirror will increase significantly, thereby being able to achieve a higher feedback intensity for the semiconductor random laser. In addition, the bandwidth of the loop mirror is determined by the directional coupler, while the random grating is composed of a Bragg grating. The bandwidth of the random grating is determined by the bandwidth of the Bragg grating. Since the bandwidth of the directional coupler is usually much larger than the bandwidth of the Bragg grating, the integrated chip provided by the present invention can enable the semiconductor random laser with the integrated chip to have a larger operating bandwidth compared to the random grating. Multiple loop mirrors and other components are all arranged on the integrated chip, which has a simple structure, can effectively reduce the size, has strong integration, and the use of the loop mirror has relatively low requirements for etching precision, which can reduce the production cost to a certain extent and further improve production efficiency. The semiconductor optical amplifier and the reflective structure on the semiconductor random laser can together form the gain region of the laser, and the multiple loop mirrors can together form the random reflection region of the laser. Semiconductor optical amplifiers are used to convert electrical excitation into laser energy, bidirectionally amplifying the laser light entering them. When a semiconductor random laser is operating, the amplifier first generates a weak laser light that propagates through an optical waveguide and then through multiple loop mirrors. These mirrors provide random reflections for the laser light. Each time the laser light passes through the loop mirror waveguide and directional coupler of a loop mirror, a portion of the laser light is randomly reflected and changes its direction of propagation, while another portion continues to enter the next loop mirror waveguide and directional coupler until all the laser light has been reflected. After being reflected by the loop mirror, the laser light propagates in the opposite direction, passing through the semiconductor optical amplifier and then into the reflective structure. Because the laser light gain at this point is low, this portion of the laser light is reflected and propagates in the opposite direction after propagating through the reflective structure. It then enters the semiconductor optical amplifier for further amplification, then propagates through multiple loop mirrors and is reflected back to the semiconductor optical amplifier and reflective structure by the loop mirrors, continuing this round-trip propagation. During this process, the laser light repeatedly gains gain through the semiconductor optical amplifier. When the gain gained from these round trips offsets the total loss, the laser light finally exits the optical waveguide and is emitted through the reflective structure, making it reliable and practical. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 1 is a simplified structural diagram of a semiconductor random laser provided by one embodiment of the present invention;

[0028] Figure 2 is a simplified structural diagram of a semiconductor random laser provided by another embodiment of the present invention;

[0029] Figure 3It is a structural schematic diagram of the integrated chip provided by the present invention;

[0030] Figure 4 It is a schematic diagram of the integrated chip manufacturing method provided by the present invention.

[0031] In the picture:

[0032] 101, silicon substrate; 102, silicon dioxide lower cladding layer; 103, top silicon layer; 104, silicon dioxide upper cladding layer;

[0033] 110. Loop mirror; 111. Loop mirror waveguide; 112. Directional coupler; 113. Connecting waveguide; 114. Light transmission waveguide;

[0034] 200. Semiconductor optical amplifier;

[0035] 300, reflective structure;

[0036] 400. Wedge-shaped pattern converter. DETAILED DESCRIPTION

[0037] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures.

[0038] In the description of the present invention, unless otherwise expressly specified or limited, the terms "connected," "connected," and "fixed" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention in specific circumstances.

[0039] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0040] In the description of this embodiment, the terms "upper," "lower," "right," and other orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely for ease of description and simplified operation. They do not indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first" and "second" are used solely for descriptive purposes and have no special meanings.

[0041] The present invention provides an integrated chip used as a feedback structure of a semiconductor random laser. Figures 1 to 2 As shown, the integrated chip includes a loop mirror 110, which includes a loop mirror waveguide 111 and a directional coupler 112. The two ends of the loop mirror waveguide 111 are respectively connected to the ports on the corresponding sides of the directional coupler 112. The number of loop mirrors 110 is set to multiple, and the multiple loop mirrors 110 are connected in sequence to provide random feedback. Two adjacent loop mirrors 110 are connected through a connecting waveguide 113, and the loop mirror 110 located at one end is connected to a light transmission waveguide 114 on the side away from the adjacent loop mirror 110.

[0042] In this embodiment, multiple loop mirrors 110 can together form a random reflection area of ​​the laser. The semiconductor optical amplifier 200 is used to convert electrical excitation into laser energy and can bidirectionally amplify the laser light entering it. When the semiconductor random laser is working, the laser light propagates through the light transmission waveguide 114 and through multiple loop mirrors 110 in sequence. The multiple loop mirrors 110 can provide random reflection for the laser light. Each time the laser light passes through the loop mirror waveguide 111 and the directional coupler 112 of a loop mirror 110, a part of it is randomly reflected and changes the propagation direction, and the other part continues to enter the next loop mirror waveguide 111 and the directional coupler 112 until all the laser light is reflected. As for the reflection ratio provided by each loop mirror 110 to the laser light, it can be set according to actual needs.

[0043] The loop mirror waveguide 111 can be a strip waveguide or a ridge waveguide. In this embodiment, to reduce the overall size of the device, the shape of the loop mirror waveguide 111 is preferably set to a strip waveguide. It should be noted that setting the loop mirror waveguide 111 as a strip waveguide is only a preferred embodiment of this solution and does not specifically limit the shape of the loop mirror waveguide 111 in this solution. Of course, it can also be set to other shapes according to actual needs, such as square, circle, or rounded square. Changing only the shape of the loop mirror waveguide 111 still falls within the scope of protection of the present invention.

[0044] Optionally, the lengths of the plurality of loop mirror waveguides 111 are set to be different and set to preset values ​​to provide random feedback. Figure 1Optionally, among the plurality of loop mirrors 110 connected in sequence, the length of the connecting waveguide 113 between each two adjacent loop mirrors 110 is set to be different and set to a preset value to provide random feedback. Figure 2 As shown. Optionally, the lengths of the multiple loop mirror waveguides 111 and the lengths of the connecting waveguides 113 between each two adjacent loop mirrors 110 are set to different values ​​and set to preset values ​​to provide random feedback. This setting can further ensure the randomness of the laser reflections of the multiple loop mirrors 110. It is pointed out that the above preset values ​​are set according to actual needs. The preset values ​​of the length of each loop mirror waveguide 111 and / or the length of the connecting waveguide 113 between each two adjacent loop mirrors 110 can be adaptively adjusted according to different needs, and random values ​​can be taken within a certain range.

[0045] Specifically, when multiple loop mirrors 110 are connected together, if the length of the loop mirror waveguide 111 in each loop mirror 110 is set to a random value, then the time delay of the reflected light from each loop mirror 110 will be random, which means that the multiple connected loop mirrors 110 can be equivalently regarded as randomly distributed in space. Therefore, the feedback provided by the connection of multiple loop mirrors 110 can be regarded as randomly distributed in space, thereby providing random feedback. In addition, when the length of the loop mirror waveguide 111 in each loop mirror 110 is the same, when the length of the connecting waveguide 113 connecting adjacent loop mirrors 110 is artificially set to a random value, since each loop mirror 110 is randomly distributed in space, the feedback provided by the connection of multiple loop mirrors 110 is randomly distributed in space, thereby providing random feedback.

[0046] In this embodiment, the reflectivity of the ring mirror 110 is ≤5%. Setting the reflectivity of the ring mirror 110 to ≤5% allows light incident on the multiple cascaded ring mirrors 110 to be transmitted to each ring mirror 110, effectively avoiding the situation where the reflectivity of the ring mirror 110 is too high, resulting in the light incident on the multiple cascaded ring mirrors 110 being almost completely reflected during the process of propagating through the first few ring mirrors 110, causing the ring mirrors 110 far away from the incident end to have almost no effect. Therefore, the reflectivity of the ring mirror 110 is preferably limited to within 5%.

[0047] Optionally, the reflectivity of the ring mirror 110 may be 1%, 2%, 3%, 4% or 5%.

[0048] As an optional embodiment, the number of the ring mirrors 110 is set to 7-30. The overall reflectivity of the multiple cascaded ring mirrors 110 is preferably set to be greater than 90%. On the basis of ensuring reliable and effective random reflection of the laser, the production cost is also reasonably controlled.

[0049] As an optional embodiment, the annular mirrors 110 are arranged in sequence along the length direction of the integrated chip. This arrangement makes the arrangement of the multiple annular mirrors 110 more regular and facilitates production.

[0050] As an optional embodiment, the material of the integrated chip is set to be silicon, silicon nitride, silicon dioxide, or indium phosphide.

[0051] In this embodiment, the reflectivity, wavelength, number, and other parameters of all the loop mirrors 110 are determined by actual conditions. The reflectivity, wavelength, number, and other parameters of the multiple loop mirrors 110 can be the same or different.

[0052] This embodiment also provides a method for manufacturing an integrated chip, which is used to manufacture the integrated chip mentioned above. Figure 4 As shown, the method for manufacturing an integrated chip based on silicon on insulator includes the following steps:

[0053] S100, a mask is fabricated on an SOI wafer, the SOI wafer including a silicon substrate 101, a silicon dioxide lower cladding layer 102, and a top silicon layer 103. The top silicon layer 103 is subjected to a photolithography or etching process to form a loop mirror waveguide 111, a directional coupler 112, a connecting waveguide 113, and a light transmission waveguide 114. A directional coupler 112 is connected at both ends of each loop mirror waveguide 111 to form a loop mirror 110. A plurality of loop mirrors 110 are provided, and the plurality of loop mirrors 110 are sequentially connected to provide random feedback.

[0054] Two adjacent loop mirrors 110 are connected via a connecting waveguide 113 , and a loop mirror 110 at one end thereof is connected to a light transmission waveguide 114 on a side away from the adjacent loop mirror 110 ;

[0055] S200 , depositing and growing a silicon dioxide upper cladding layer 104 on the top silicon layer 103 to form an integrated chip.

[0056] In this embodiment, the SOI wafer can be manufactured using the implanted oxygen separation technology, the bonding and etching back technology, and the smart shearing technology.

[0057] Specifically, the thickness of the silica lower cladding layer 102 and the silica upper cladding layer 104 is set to 1-5um. As an optional embodiment, the thickness of the silica lower cladding layer 102 and the silica upper cladding layer 104 is set to 2-3um; the thickness of the silicon substrate 101 is set to 500-1000um; the thickness of the top silicon 103 is set to 200-300nm; as an optional embodiment, the thickness of the top silicon 103 is set to 220nm.

[0058] In this embodiment, after the integrated chip processing is completed, wafer scribing, chip end surface grinding and other processes need to be performed in sequence.

[0059] The present invention also provides a semiconductor random laser. Figures 1 to 2 As shown, the semiconductor random laser mainly includes the above-mentioned integrated chip, and also includes a semiconductor optical amplifier 200. The semiconductor optical amplifier 200 is connected to the optical input waveguide 114 of the integrated chip. The output end of the semiconductor optical amplifier 200 is provided with a reflective structure 300 corresponding to the optical input waveguide 114. Optionally, the semiconductor optical amplifier 200 and the integrated chip can be integrated together through inter-chip hybrid integration or monolithic integration.

[0060] In this embodiment, the semiconductor optical amplifier 200 and the reflective structure 300 together form the laser gain region, and the multiple loop mirrors 110 together form the laser random reflection region. The semiconductor optical amplifier 200 is used to convert electrical excitation into laser energy and can bidirectionally amplify the laser light entering it. When the semiconductor random laser is in operation, the semiconductor optical amplifier 200 first generates a weak laser light that propagates through the optical waveguide 114 and sequentially through the multiple loop mirrors 110. The multiple loop mirrors 110 can provide random reflection for the laser light. Each time the laser light passes through the loop mirror waveguide 111 and directional coupler 112 of a loop mirror 110, a portion of the laser light is randomly reflected and changes its propagation direction, while another portion continues to enter the next loop mirror waveguide 111 and directional coupler 112 until all the laser light is reflected. After being reflected by the loop mirror 110, the laser propagates in the reverse direction and propagates through the semiconductor optical amplifier 200 to the reflective structure 300. Since the laser is reflected fewer times at this time, the corresponding gain is smaller. Therefore, after this part of the laser propagates to the reflective structure 300, it will be reflected and propagated in the reverse direction, and then enter the semiconductor optical amplifier 200 again for amplification, and then propagate to multiple loop mirrors 110 again and be reflected back to the semiconductor optical amplifier 200 and the reflective structure 300 under the action of the loop mirror 110, and propagate back and forth. During the round-trip process, the laser repeatedly passes through the semiconductor optical amplifier 200 for gain. During the round-trip process, the laser is continuously amplified. When the gain obtained can offset the total consumption, the laser can be output from the light transmission waveguide 114 and finally emitted through the reflective structure 300, which is reliable and practical.

[0061] In this embodiment, the semiconductor random laser further includes a wedge-shaped pattern converter 400, which is disposed on the optical input waveguide 114 and located on the side of the semiconductor optical amplifier 200 away from the reflective structure 300. Specifically, given that the waveguide mode field sizes of the semiconductor optical amplifier 200 and the multiple loop mirrors 110 generally do not match, the provision of the wedge-shaped pattern converter 400 allows the laser light to enter the wedge-shaped pattern converter 400 as it propagates along the optical input waveguide 114 toward the semiconductor optical amplifier 200. The wedge-shaped pattern converter 400 can then achieve low-loss coupling with the random reflection region formed by the multiple loop mirrors 110, thereby reducing the coupling loss between the semiconductor optical amplifier 200 and the multiple loop mirrors 110.

[0062] In this embodiment, the reflective structure 300 may be configured as a waveguide grating, or the reflective structure 300 may be configured as a reflective film.

[0063] In this embodiment, the reflectivity of the reflective structure 300 is set to 1-50%. Specifically, as the reflectivity increases, the threshold of the semiconductor random laser gradually decreases. The optical efficiency of the semiconductor random laser first increases and then decreases with the increase in reflectivity, reaching maximum optical efficiency at the optimal reflectivity. At this time, the semiconductor random laser can obtain the maximum random laser lasing power. The optimal reflectivity is related to the reflectivity of the cascaded ring mirror, limiting the reflectivity of the reflective structure 300 to 1%-50%.

[0064] Optionally, the reflectivity of the reflective structure 300 may be 1%, 5%, 10%, 20%, 30%, 40% or 50%.

[0065] In summary, the semiconductor random laser provided by this embodiment, with its multiple loop mirrors 110 structure, can achieve higher feedback strength compared to conventional Rayleigh scattering and have a wider operating bandwidth compared to conventional random gratings. Multiple loop mirrors 110, semiconductor optical amplifier 200, and other components are all provided on an integrated chip, resulting in a simple structure, effective size reduction, and strong integration. Furthermore, the use of loop mirrors 110 requires relatively low etching precision, which can reduce production costs to a certain extent and further improve production efficiency.

[0066] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. A person skilled in the art would be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is not necessary and impossible to enumerate all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. An integrated chip, characterized in that: include: A loop mirror (110), the loop mirror (110) comprising a loop mirror waveguide (111) and a directional coupler (112), the two ends of the loop mirror waveguide (111) being respectively connected to ports on corresponding sides of the directional coupler (112), the number of the loop mirrors (110) being set to be multiple, and the multiple loop mirrors (110) being connected in sequence to provide random feedback; wherein, Two adjacent ring mirrors (110) are connected via a connecting waveguide (113), and the ring mirror (110) located at one end is connected to a light transmission waveguide (114) on a side away from the adjacent ring mirror (110).

2. The integrated chip according to claim 1, characterized in that: The lengths of the plurality of loop mirror waveguides (111) are set to different preset values, so that the plurality of loop mirrors (110) connected in sequence provide random feedback.

3. The integrated chip according to claim 1, characterized in that: In the plurality of loop mirrors (110), the length of the connecting waveguide (113) between each two adjacent loop mirrors (110) is set to a different preset value, so that the plurality of sequentially connected loop mirrors (110) provide random feedback.

4. The integrated chip according to any one of claims 1 to 3, characterized in that: The reflectivity of the annular mirror (110) is ≤5%.

5. The integrated chip according to any one of claims 1 to 3, characterized in that: The number of the annular mirrors (110) is set to 7-30.

6. A method for manufacturing an integrated chip, for manufacturing the integrated chip according to any one of claims 1 to 5, characterized in that: The manufacturing method of the integrated chip comprises the following steps: S100, making a mask on an SOI wafer, the SOI wafer comprising a silicon substrate (101), a silicon dioxide lower cladding layer (102), and a top silicon layer (103), performing a photolithography or etching process on the top silicon layer (103) to form the loop mirror waveguide (111), the directional coupler (112), the connecting waveguide (113), and the light transmission waveguide (114), and connecting the directional coupler (112) at both ends of each loop mirror waveguide (111) to form the loop mirror (110); the loop mirror (110) is provided in plurality, and the plurality of loop mirrors (110) are connected in sequence to provide random feedback; wherein, Two adjacent ring mirrors (110) are connected via a connecting waveguide (113), and the ring mirror (110) located at one end thereof is connected to a light transmission waveguide (114) on a side away from the adjacent ring mirror (110); S200, depositing and growing a silicon dioxide upper cladding layer (104) on the top silicon layer (103) to form the integrated chip.

7. A semiconductor random laser, characterized in that: The integrated chip according to any one of claims 1 to 5 further comprises: A semiconductor optical amplifier (200) is connected to the optical transmission waveguide (114) of the integrated chip, and a reflection structure (300) corresponding to the optical transmission waveguide (114) is provided at the output end of the semiconductor optical amplifier (200).

8. The semiconductor random laser according to claim 7, characterized in that It also includes a wedge-shaped spot converter (400), which is arranged on the light transmission waveguide (114) and located on a side of the semiconductor optical amplifier (200) away from the reflective structure (300).

9. The semiconductor random laser according to claim 7, characterized in that The reflective structure (300) is configured as a waveguide grating or a reflective film.

10. The semiconductor random laser according to any one of claims 7 to 9, characterized in that: The reflectivity of the reflective structure (300) is set to 1%-50%.

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