High electron mobility transistor with vertical AlGaN / GaN structure and method of making the same
By introducing a vertical AlGaN/GaN structure and heterojunction design into GaN-based high electron mobility transistors, the problems of poor normally-on and breakdown voltage capabilities of the devices are solved, and enhancement-mode operation with high breakdown voltage is achieved, making it suitable for high-voltage and high-frequency power electronics applications.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU CHIPPORT SEMICON CO LTD
- Filing Date
- 2023-03-21
- Publication Date
- 2026-07-24
AI Technical Summary
Existing GaN-based high electron mobility transistors suffer from threshold voltage less than 0 and poor voltage withstand capability, resulting in devices that are always on and unstable in high-voltage environments, increasing the difficulty of circuit design and posing safety hazards.
A vertical AlGaN/GaN structure is adopted. By growing a C-doped GaN layer and an N-GaN transition layer on a self-supporting N+-GaN substrate, and forming steps and grooves by dry plasma etching, a GaN channel layer and an AlGaN barrier layer are grown to form a heterostructure. Gate contacts are designed on the polar and non-polar surfaces to achieve enhancement mode operation.
This invention achieves enhanced devices with high breakdown voltage and enhanced operating characteristics, simplifies circuit design, and improves device safety and stability, making it suitable for high-voltage and high-frequency applications.
Smart Images
Figure CN116504805B_ABST