A method for 3D additive manufacturing of electronic and optoelectronic devices

Abstract

This invention provides a method for 3D additive manufacturing of electronic and optoelectronic devices, establishing an intelligent integrated platform for 3D additive manufacturing. It integrates a design group, a 3D additive intelligent manufacturing group, a 3D additive manufacturing multi-functional testing group, a multi-type integrated packaging group, and a local cloud data sharing group. The integrated design group designs the overall 3D additive manufacturing process for semiconductor electronic and optoelectronic devices. The 3D additive intelligent manufacturing group generates detailed 3D additive manufacturing processes for intelligent 3D additive manufacturing of semiconductor electronic and optoelectronic devices. The 3D additive manufacturing multi-functional testing group performs real-time detection and final testing of 3D additive manufacturing. The multi-type integrated packaging group performs electrical connections and packaging of semiconductor electronic and optoelectronic devices. The local cloud data sharing group enables data sharing, storage, interoperability, and mutual backup computing between the platform's local end and the cloud.

Description

Technical Field

[0001] This invention relates to the field of 3D additive precision manufacturing technology for electronic semiconductors, and more specifically, to a method for 3D additive manufacturing of electronic and optoelectronic devices. Background Technology

[0002] Current semiconductor device manufacturing has the following main shortcomings: long production cycle, requiring hundreds of complex processes from design to product delivery, including chip manufacturing, packaging, and testing, and passing through several factories such as semiconductor chip factories and semiconductor packaging and testing factories; typically, it takes at least two months from product design submission to product delivery; high production and transportation costs, falling far short of end customers' basic requirements for high performance, low cost, and short cycle time; and product reliability issues, as the hundreds of processes from chip manufacturing, packaging, and testing, including reliability testing, and the transportation process from semiconductor chip factories to semiconductor packaging and testing factories, make the quality control of semiconductor devices extremely challenging and remain unresolved. Therefore, it is necessary to propose a 3D additive manufacturing method for electronic and optoelectronic devices to at least partially solve the problems existing in the current technology. Summary of the Invention

[0003] The summary of this invention introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. The summary of this invention does not mean that it attempts to limit the key features and essential technical features of the claimed technical solution, nor does it mean that it attempts to determine the scope of protection of the claimed technical solution.

[0004] To at least partially solve the above problems, the present invention provides a method for 3D additive manufacturing of electronic and optoelectronic devices, comprising:

[0005] S100: Establish a smart integrated platform for 3D additive manufacturing; the smart integrated platform for 3D additive manufacturing includes: integrated design group, 3D additive intelligent manufacturing group, 3D additive manufacturing multi-functional testing group, multi-type integrated packaging group and local cloud data sharing group;

[0006] S200: Through the integrated design group, the overall process design of 3D additive manufacturing of semiconductor electronic and optoelectronic devices is carried out, and the overall design data of 3D additive manufacturing is obtained.

[0007] S300: Based on the overall design data of 3D additive manufacturing, the 3D additive intelligent manufacturing group generates detailed 3D additive manufacturing processes to carry out 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices.

[0008] S400: Through the 3D additive manufacturing multi-functional inspection group, real-time inspection and final inspection of 3D additive manufacturing are performed;

[0009] S500: Enables electrical connection and packaging of semiconductor electronic and optoelectronic devices through a multi-type integrated package;

[0010] S600: Enables data sharing, storage, interoperability, and backup computing between the platform's local end and the cloud via a local cloud data sharing group.

[0011] Preferably, S100 includes:

[0012] S101: Establish a 3D additive manufacturing connection structure framework, integrating the design group's communication connection to the local cloud data sharing group and the 3D additive intelligent manufacturing group; the 3D additive intelligent manufacturing group is electrically connected to the integrated design group and the 3D additive manufacturing multi-functional testing group respectively; the multi-type integrated packaging group is electrically connected to the 3D additive intelligent manufacturing group and the 3D additive manufacturing multi-functional testing group respectively.

[0013] S102: Based on the 3D additive manufacturing connection structure framework, create a 3D additive manufacturing intelligent integrated platform.

[0014] Preferably, S200 includes:

[0015] S201: Read relevant design information of semiconductor electronic and optoelectronic devices to be manufactured through the integrated design group;

[0016] S202: Based on semiconductor electronic and optoelectronic device design information, the preliminary device manufacturing specifications and preliminary device packaging specifications are automatically selected through the semiconductor device and packaging design unit;

[0017] S203: Based on the preliminary specifications for device manufacturing and device packaging, design the overall 3D additive manufacturing process using the semiconductor device 3D additive manufacturing CAD computer-aided design unit; obtain the overall 3D additive manufacturing design data based on the overall 3D additive manufacturing process design; and transmit the overall 3D additive manufacturing design data to the 3D additive intelligent manufacturing group.

[0018] Preferably, S300 includes:

[0019] S301: Based on the overall design data of 3D additive manufacturing, the detailed process of 3D additive manufacturing is generated through the 3D additive intelligent manufacturing group; the 3D additive intelligent manufacturing group includes: 3D additive manufacturing CAM computer-aided manufacturing unit and 3D additive manufacturing special process unit;

[0020] S302: Based on the detailed 3D additive manufacturing process, 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices is carried out through the 3D additive manufacturing CAM computer-aided manufacturing unit; 3D additive intelligent manufacturing includes: 3D ceramic material sintering and melting, 3D semiconductor material sintering and melting, 3D metal material sintering and melting, 3D polymer nanomaterial processing, 3D material component heat treatment, 3D plasma etching and chemical cleaning;

[0021] S303: Special semiconductor manufacturing processes are performed using special 3D additive manufacturing process units; the special 3D additive manufacturing process units include: special semiconductor laser sintering subunit, special semiconductor melt epitaxy subunit, special semiconductor atomic layer epitaxy subunit, special semiconductor heat treatment subunit, special semiconductor ion beam etching subunit, and special semiconductor chemical cleaning subunit.

[0022] Preferably, S400 includes:

[0023] S401: In the 3D additive manufacturing process, a multi-functional 3D additive manufacturing inspection group is used to perform non-destructive and non-contact real-time inspection of semiconductor electronic and optoelectronic devices. The real-time inspection of 3D additive manufacturing includes: measuring semiconductor structure through X-ray diffraction, detecting thin film characteristics through polarization optics, monitoring the process through secondary ion mass spectrometry, and detecting process parameters and device parameters in real time through surface capacitance, voltage, and impedance meters.

[0024] S402: After the 3D additive manufacturing process is completed, the final 3D additive manufacturing test is performed.

[0025] Preferably, S500 includes:

[0026] S501: Determine the type of electrical connection metal and electrical connection design parameters according to the electrical connection technology requirements of semiconductor electronic and optoelectronic devices;

[0027] S502: Select the 3D packaging type according to the application technology requirements of semiconductor electronic and optoelectronic devices;

[0028] S503: Through a multi-type integrated package, it performs electrical connection and packaging of semiconductor electronic and optoelectronic devices according to the type of electrical connection metal, electrical connection design parameters and three-dimensional packaging type.

[0029] Preferably, S600 includes:

[0030] S601: The local cloud data sharing group and the integrated design group share communication data storage; and when the local computing limit is reached, they can perform mutual communication and backup computing through cloud computing.

[0031] S602: Data sharing and storage includes all data and information from the shared storage integrated design group, the 3D additive intelligent manufacturing group, the 3D additive manufacturing multi-functional testing group, and the multi-type integrated packaging group;

[0032] S603: Enables data sharing, storage, interoperability, and backup computing between the platform's local end and the cloud via a local cloud data sharing group.

[0033] Preferably, S201 includes:

[0034] S2031: Establish the integrated design group design unit; the integrated design group includes: semiconductor device and packaging design unit and semiconductor device 3D additive manufacturing CAD computer-aided design unit;

[0035] S2032: Read the design-related information of the semiconductor electronic and optoelectronic devices to be manufactured; semiconductor electronic and optoelectronic devices include: semiconductor electronic devices, semiconductor optoelectronic devices or semiconductor power devices; the design-related information of semiconductor electronic and optoelectronic devices includes: device application, device performance and device reliability requirements.

[0036] Preferably, S302 includes:

[0037] S3021: Transfer the detailed 3D additive manufacturing process to the 3D additive manufacturing CAM computer-aided manufacturing unit;

[0038] S3022: Intelligent 3D additive manufacturing of semiconductor electronic and optoelectronic devices using 3D additive manufacturing (CAM) computer-aided manufacturing units;

[0039] S3023: 3D additive intelligent manufacturing includes: 3D ceramic material sintering and melting, 3D semiconductor material sintering and melting, 3D metal material sintering and melting, 3D polymer nanomaterial processing, 3D material component heat treatment, 3D plasma etching and chemical cleaning; in the 3D additive intelligent manufacturing process, each layer of the required sintering and melting area is solidified into a solid by intelligently controlled selective ultraviolet irradiation; the final component undergoes a heat treatment degreasing process; 3D semiconductor material sintering and melting includes: semiconductor binder spraying, selectively applying a mixture of high-purity semiconductor material and binder layer by layer; the final component undergoes a heat treatment degreasing process; semiconductor powder sintering; using a high-power laser to sinter high-purity semiconductor powder of different conductivity types to the required positions of the device layer by layer; semiconductor nanoparticle spraying, depositing a liquid suspension containing solid semiconductor nanoparticles of different conductivity types layer by layer through a nano-nozzle as needed; semiconductor photopolymerization, using a photopolymerization DLP digital light processing additive manufacturing machine, solidifying each layer of the required sintering and melting area into a solid by intelligently controlled selective ultraviolet irradiation of photosensitive resin containing semiconductor microparticles of different conductivity types.

[0040] Preferably, S402 includes:

[0041] S4021: After the 3D additive manufacturing process is completed, a final inspection node is set up to conduct the final inspection test of the 3D additive manufacturing process.

[0042] S4022: Final testing for 3D additive manufacturing includes: device size and appearance design standard testing, device basic functional parameter testing, device special functional parameter testing, and 3D additive manufacturing device performance and reliability testing; device basic functional parameter testing includes: device basic input parameters, device basic output parameters, and device basic leakage current parameters; device special functional parameters include: device special input parameters, device special output parameters, and device special leakage current parameters; 3D additive manufacturing device performance and reliability testing includes: device design performance parameter testing and device reliability parameter testing; design performance parameter testing includes: high-frequency testing, low-frequency testing, and power parameter testing; device reliability parameter testing includes: reliability testing of devices manufactured using conventional processes and reliability testing of 3D additive manufacturing devices.

[0043] Compared with the prior art, the present invention has at least the following beneficial effects:

[0044] This invention provides a method for 3D additive manufacturing of electronic and optoelectronic devices, and establishes an intelligent integrated platform for 3D additive manufacturing. The intelligent integrated platform includes: an integrated design group, a 3D additive intelligent manufacturing group, a 3D additive manufacturing multi-functional testing group, a multi-type integrated packaging group, and a local cloud data sharing group. Through the integrated design group, the overall 3D additive manufacturing process for semiconductor electronic and optoelectronic devices is designed, and overall 3D additive manufacturing design data is obtained. Based on the overall 3D additive manufacturing design data, the 3D additive intelligent manufacturing group generates detailed 3D additive manufacturing processes, and performs intelligent 3D additive manufacturing of semiconductor electronic and optoelectronic devices. Through 3D additive manufacturing... The multi-functional testing group performs real-time testing and final inspection of 3D additive manufacturing; the multi-type integrated packaging group performs electrical connection and packaging of semiconductor electronic and optoelectronic devices; the local cloud data sharing group enables data sharing, storage, interoperability, and backup computing between the local platform and the cloud; shortens the design and production cycle of semiconductor electronic and optoelectronic devices and power devices by 80% to 95%; reduces the manufacturing cost of semiconductor electronic and optoelectronic devices and power devices by 60% to 80%; improves the performance of semiconductor electronic and optoelectronic devices and power devices; enhances the reliability of semiconductor electronic and optoelectronic devices and power devices; and is environmentally friendly, reducing environmental pollution.

[0045] The present invention provides a method for 3D additive manufacturing of electronic and optoelectronic devices. Other advantages, objectives and features of the present invention will be apparent in part from the following description, and in part from the understanding of those skilled in the art through study and practice of the invention. Attached Figure Description

[0046] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings:

[0047] Figure 1 This is a flowchart illustrating a method for 3D additive manufacturing of electronic and optoelectronic devices according to the present invention.

[0048] Figure 2 This is a diagram of an embodiment of a method for 3D additive manufacturing of electronic and optoelectronic devices according to the present invention.

[0049] Figure 3 This is a diagram of another embodiment of the method for 3D additive manufacturing of electronic and optoelectronic devices according to the present invention. Detailed Implementation

[0050] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments, so that those skilled in the art can implement it based on the specification; for example Figures 1-3 As shown, the present invention provides a method for 3D additive manufacturing of electronic and optoelectronic devices, comprising:

[0051] S100: Establish a smart integrated platform for 3D additive manufacturing; the smart integrated platform for 3D additive manufacturing includes: integrated design group, 3D additive intelligent manufacturing group, 3D additive manufacturing multi-functional testing group, multi-type integrated packaging group and local cloud data sharing group;

[0052] S200: Through the integrated design group, the overall process design of 3D additive manufacturing of semiconductor electronic and optoelectronic devices is carried out, and the overall design data of 3D additive manufacturing is obtained.

[0053] S300: Based on the overall design data of 3D additive manufacturing, the 3D additive intelligent manufacturing group generates detailed 3D additive manufacturing processes to carry out 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices.

[0054] S400: Through the 3D additive manufacturing multi-functional inspection group, real-time inspection and final inspection of 3D additive manufacturing are performed;

[0055] S500: Enables electrical connection and packaging of semiconductor electronic and optoelectronic devices through a multi-type integrated package;

[0056] S600: Enables data sharing, storage, interoperability, and backup computing between the platform's local end and the cloud via a local cloud data sharing group.

[0057] The principle and effects of the above technical solution are as follows: This invention provides a method for 3D additive manufacturing of electronic and optoelectronic devices, and establishes a 3D additive manufacturing intelligent integrated platform; the 3D additive manufacturing intelligent integrated platform includes: an integrated design group, a 3D additive intelligent manufacturing group, a 3D additive manufacturing multi-functional testing group, a multi-type integrated packaging group, and a local cloud data sharing group; through the integrated design group, the overall process design of 3D additive manufacturing of semiconductor electronic and optoelectronic devices is carried out, and the overall design data of 3D additive manufacturing is obtained; based on the overall design data of 3D additive manufacturing, the 3D additive intelligent manufacturing group generates detailed 3D additive manufacturing processes, and performs 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices; The system utilizes a multi-functional 3D additive manufacturing inspection group for real-time and final testing of 3D additive manufacturing processes; a multi-type integrated packaging group for electrical connections and packaging of semiconductor electronic and optoelectronic devices; and a local-cloud data sharing group for data sharing, storage, interoperability, and backup computing between the local platform and the cloud. This approach shortens the design and production cycle of semiconductor electronic and optoelectronic devices and power devices by 80% to 95%; reduces manufacturing costs by 60% to 80%; improves performance and reliability; and is environmentally friendly, reducing pollution.

[0058] In one embodiment, S100 includes:

[0059] S101: Establish a 3D additive manufacturing connection structure framework, integrating the design group's communication connection to the local cloud data sharing group and the 3D additive intelligent manufacturing group; the 3D additive intelligent manufacturing group is electrically connected to the integrated design group and the 3D additive manufacturing multi-functional testing group respectively; the multi-type integrated packaging group is electrically connected to the 3D additive intelligent manufacturing group and the 3D additive manufacturing multi-functional testing group respectively.

[0060] S102: Based on the 3D additive manufacturing connection structure framework, create a 3D additive manufacturing intelligent integrated platform.

[0061] The principles and effects of the above technical solution are as follows: A 3D additive manufacturing connection structure framework is established, integrating the design group's communication connection to the local cloud data sharing group and the 3D additive intelligent manufacturing group; the 3D additive intelligent manufacturing group is electrically connected to the integrated design group and the 3D additive manufacturing multi-functional testing group; the multi-type integrated packaging group is electrically connected to the 3D additive intelligent manufacturing group and the 3D additive manufacturing multi-functional testing group; based on the 3D additive manufacturing connection structure framework, a 3D additive manufacturing intelligent integrated platform is created; the design and production cycle of semiconductor electronic and optoelectronic devices as well as power devices is shortened.

[0062] In one embodiment, S200 includes:

[0063] S201: Read relevant design information of semiconductor electronic and optoelectronic devices to be manufactured through the integrated design group;

[0064] S202: Based on semiconductor electronic and optoelectronic device design information, the preliminary device manufacturing specifications and preliminary device packaging specifications are automatically selected through the semiconductor device and packaging design unit;

[0065] S203: Based on the preliminary specifications for device manufacturing and device packaging, design the overall 3D additive manufacturing process using the semiconductor device 3D additive manufacturing CAD computer-aided design unit; acquire the overall 3D additive manufacturing design data based on the overall 3D additive manufacturing process design; transmit the overall 3D additive manufacturing design data to the 3D additive intelligent manufacturing group; the overall 3D additive manufacturing process design includes: device 3D material selection, 3D additive step-by-step manufacturing process design, device packaging type design, and 3D additive manufacturing testing design; the overall 3D additive manufacturing design data includes: device circuit design diagram, device overall design diagram, device process flow diagram, device packaging design data, device testing plan, device finished product performance testing plan, and reliability evaluation plan; the device packaging design data includes: device packaging model, packaging size, and packaging material.

[0066] The principle and effect of the above technical solution are as follows: The integrated design group reads relevant design information of the semiconductor electronic and optoelectronic devices to be manufactured; based on this design information, the semiconductor device and packaging design unit automatically selects preliminary device manufacturing specifications and preliminary device packaging specifications; based on these specifications, the semiconductor device 3D additive manufacturing CAD computer-aided design unit designs the overall 3D additive manufacturing process; based on this overall process design, the overall 3D additive manufacturing design data is obtained; and the overall design data is transmitted to the 3D additive intelligent manufacturing group. The overall 3D additive manufacturing process design includes: device 3D material selection, 3D additive step-by-step manufacturing process design, device packaging type design, and 3D additive manufacturing testing design. The overall design data includes: device circuit design diagrams, device overall design diagrams, device process flow diagrams, device packaging design data, device testing schemes, device finished product performance testing schemes, and reliability evaluation schemes. The device packaging design data includes: device packaging model, packaging size, and packaging material. This significantly improves the efficiency of the overall process design for semiconductor electronic and optoelectronic devices.

[0067] In one embodiment, S300 includes:

[0068] S301: Based on the overall design data of 3D additive manufacturing, the detailed 3D additive manufacturing process is generated through the 3D additive intelligent manufacturing group. The 3D additive intelligent manufacturing group includes: a 3D additive manufacturing CAM computer-aided manufacturing unit and a 3D additive manufacturing special process unit. The detailed 3D additive manufacturing process includes: types of 3D additive manufacturing processes and required materials, detailed parameters of 3D additive manufacturing processes, types of 3D additive manufacturing packaging processes and required materials, detailed parameters of 3D additive manufacturing packaging processes, methods and parameters for testing 3D additive manufacturing packaged products, detailed parameters for testing 3D additive manufacturing packaged products, methods and parameters for reliability assessment of packaged products, and detailed parameters for reliability testing of packaged products.

[0069] S302: Based on the detailed 3D additive manufacturing process, 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices is carried out through the 3D additive manufacturing CAM computer-aided manufacturing unit; 3D additive intelligent manufacturing includes: 3D ceramic material sintering and melting, 3D semiconductor material sintering and melting, 3D metal material sintering and melting, 3D polymer nanomaterial processing, 3D material component heat treatment, 3D plasma etching and chemical cleaning;

[0070] S303: Special semiconductor manufacturing processes are performed using special 3D additive manufacturing process units; the special 3D additive manufacturing process units include: special semiconductor laser sintering subunit, special semiconductor melt epitaxy subunit, special semiconductor atomic layer epitaxy subunit, special semiconductor heat treatment subunit, special semiconductor ion beam etching subunit, and special semiconductor chemical cleaning subunit.

[0071] 3D ceramic material sintering and melting includes: ceramic materials required for electronic, optoelectronic, and power devices, including: metallic, non-metallic, or inorganic compounds with ionic and covalent bonds, such as aluminum nitride, silicon oxide, zirconium oxide, silicon nitride, silicon carbide, and alumina; ceramic binder spraying, selectively applying a ceramic-binder mixture layer by layer; the final component undergoes a heat treatment debinding process; ceramic powder sintering, using a high-power laser to sinter ceramic powder layer by layer to the required location in the device; ceramic nanoparticle spraying, depositing a liquid suspension containing solid ceramic nanoparticles layer by layer through a nano-nozzle; ceramic photopolymerization, using a 3D laser stereolithography machine (3DLSL) or a digital light processing additive manufacturing machine (DLP) to selectively irradiate each layer of the required area into a solid state through intelligent control; the final component undergoes a heat treatment debinding process.

[0072] 3D metal material sintering and melting includes: high-purity metals and metal compound materials required for 3D additive manufacturing in electronics, optoelectronics, and power devices, including: titanium (Ti), aluminum (Al), copper (Cu), nickel (Ni), molybdenum (Mo), cobalt (Co), silver (Ag), gold (Au), titanium nitride (TiN), or titanium tungsten (TiW); liquid metal spraying, which deposits metal layers by spraying molten liquid metal droplets at high temperatures; electrochemical metal deposition, where an ion needle micro-additive manufacturing nozzle is immersed in an electrolyte bath, and the gas pressure is precisely adjusted to push the liquid containing metal ions through a microchannel in the ion needle tip to release the liquid containing metal ions to the area to be additively manufactured, and then the dissolved metal ions are electrodeposited into solid metal atoms; and metal binder spraying, which selectively applies metal binders layer by layer. The process involves: mixing metal materials with binders; the final component undergoing a heat treatment degreasing process; metal powder sintering, where high-power lasers are used to sinter different types of metal powder, including single metal or alloy powders, to the desired locations on the device layer by layer; metal nanoparticle jetting, where a liquid suspension containing different types of solid metal nanoparticles, including single metal or alloy solid metal nanoparticles, is deposited layer by layer as needed through a nano-jet nozzle; metal photopolymerization, where photosensitive resin containing different types of metal particles, including single metal particles or metal alloy particles, is used in a DLP digital light processing additive manufacturing machine to cure each layer in the desired area into a solid state through intelligent control and selective ultraviolet irradiation; and the final component undergoing a heat treatment degreasing process.

[0073] 3D polymer nanomaterial processing includes: 3D additive manufacturing of high-purity polymer nanomaterials required for electronic, optoelectronic and power devices, including: antistatic resin ESD, epoxy resin N2, biphenyl aryl phenolic varnish epoxy resin, cresol-phenolic varnish, siloxane polyimide, polyxylene, organosilicon, polyepoxide, bisbenzocyclobutene, polypropylene, polytetrafluoroethylene or carbon nanotubes;

[0074] Heat treatment of 3D material components includes: high-temperature rapid heat treatment, in which the 3D additive manufacturing electronic, optoelectronic, and power devices to be heat-treated are placed in a vacuum chamber filled with a special gas. The type of gas is determined according to the specific needs of the 3D additive manufacturing device, including: nitrogen-filled chamber for annealing semiconductor and insulating dielectric films, and a mixture of nitrogen and hydrogen for annealing metal films; isothermal heat treatment, in which the 3D additive manufacturing electronic, optoelectronic, and power devices to be heat-treated are placed in a vacuum chamber filled with a special gas. The type of gas is determined according to the specific needs of the 3D additive manufacturing device, including: nitrogen-filled chamber for annealing semiconductor and insulating dielectric films, and a mixture of nitrogen and hydrogen for annealing metal films; the temperature and time of the isothermal heat treatment are determined according to the specific needs of the 3D additive manufacturing device.

[0075] Laser heat treatment involves placing the 3D additive manufacturing electronics, optoelectronics, and power devices that require heat treatment in a vacuum chamber. The type of laser source is determined according to the needs of the 3D additive manufacturing device, including: semiconductor and insulating dielectric film annealing, which is determined by the characteristics of the semiconductor material and the insulating dielectric film, including: the bandgap of the material, the laser absorption coefficient, and the reflection coefficient.

[0076] 3D plasma etching includes: ion beam etching, which uses inert ions to perform physical etching; ion beam etching can etch all materials, including: materials that have not undergone plasma etching, and can be used to etch multiple materials or stacks of layers. It can also achieve precise control of multilayer material etching through SIMS secondary ion mass spectrometry, shape sidewalls by tilting the sample, and has independent control of ion beam current and energy, resulting in high repeatability and good uniformity.

[0077] Chemical cleaning includes semiconductor-grade chemical cleaning using deionized water, acids, alkalis, or organic solvents.

[0078] 3D additive manufacturing materials include: semiconductor materials, ceramic and insulating materials, special materials, polymer materials, metallic materials, and biomaterials;

[0079] Semiconductor materials include: elemental semiconductors or compound semiconductors; elemental semiconductors include: germanium or silicon; compound semiconductors include: silicon carbide, gallium nitride, gallium arsenide, gallium phosphide or gallium oxide; material states include: powder state or powder mixed with binder state;

[0080] Ceramics and insulating materials, including: silicon nitride, silicon dioxide;

[0081] Special materials include: carbon nanotubes, carbon fibers, or diamond;

[0082] Polymer materials include: ABS plastic or biodegradable plastic materials; biodegradable plastic materials include: PLA; polymer composite materials include: photocurable polymer materials;

[0083] Metallic materials include: aluminum, titanium, cobalt, gold, silver, or stainless steel; used in sintering, melting, and EBM electron beam melting processes;

[0084] Biomaterials include: non-toxic organic and inorganic materials that are compatible with the human body;

[0085] Material states include: powder state or powder mixed with binder state;

[0086] The manufacturing equipment characteristics of 3D additive manufacturing of electronic and optoelectronic devices include: integration and modularity; integration means that the electronic and optoelectronic devices are formed in a continuous and integrated manner from the substrate to the device manufacturing and packaging; modularity means that different equipment components are used for the 3D additive manufacturing of different electronic and optoelectronic devices.

[0087] The materials used in 3D additive manufacturing of electronic and optoelectronic devices are characterized by: high purity, high strength and toughness, high temperature resistance, or radiation resistance.

[0088] The principle and effect of the above technical solution are as follows: Based on the overall design data of 3D additive manufacturing, a detailed 3D additive manufacturing process is generated through a 3D additive intelligent manufacturing group. The 3D additive intelligent manufacturing group includes: a 3D additive manufacturing CAM computer-aided manufacturing unit and a 3D additive manufacturing special process unit. The detailed 3D additive manufacturing process includes: types of 3D additive manufacturing processes and required materials, detailed parameters of the 3D additive manufacturing process, types of 3D additive manufacturing packaging processes and required materials, detailed parameters of the 3D additive manufacturing packaging process, methods and parameters for testing the packaged product, detailed parameters for testing the packaged product, methods and parameters for reliability assessment of the packaged product, and detailed parameters for reliability testing of the packaged product. Based on the detailed 3D additive manufacturing process, a 3D additive manufacturing CAM computer... The auxiliary manufacturing unit performs 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices. 3D additive intelligent manufacturing includes: 3D ceramic material sintering and melting, 3D semiconductor material sintering and melting, 3D metal material sintering and melting, 3D polymer nanomaterial processing, 3D material component heat treatment, 3D plasma etching, and chemical cleaning. It also performs special semiconductor process manufacturing through special 3D additive manufacturing process units. These special process units include: special semiconductor laser sintering subunits, special semiconductor melt epitaxy subunits, special semiconductor atomic layer epitaxy subunits, special semiconductor heat treatment subunits, special semiconductor ion beam etching subunits, and special semiconductor chemical cleaning subunits. This reduces the manufacturing cost of semiconductor electronic and optoelectronic devices and power devices, and improves their performance.

[0089] In one embodiment, S400 includes:

[0090] S401: In the 3D additive manufacturing process, a multi-functional 3D additive manufacturing inspection group is used to perform non-destructive and non-contact real-time inspection of semiconductor electronic and optoelectronic devices. The real-time inspection of 3D additive manufacturing includes: measuring semiconductor structure through X-ray diffraction, detecting thin film characteristics through polarization optics, monitoring the process through secondary ion mass spectrometry, and detecting process parameters and device parameters in real time through surface capacitance, voltage, and impedance meters.

[0091] S402: After the final completion of 3D additive manufacturing, final 3D additive manufacturing testing is conducted. This final testing includes: device size and appearance design standard testing, device basic functional parameter testing, device special functional parameter testing, and 3D additive manufacturing device performance and reliability testing. Basic functional parameter testing includes: device basic input parameters, device basic output parameters, and device basic leakage current parameters. Special functional parameters include: device special input parameters, device special output parameters, and device special leakage current parameters. 3D additive manufacturing device performance and reliability testing includes: device design performance parameter testing and device reliability parameter testing. Design performance parameter testing includes: high-frequency testing, low-frequency testing, and power parameter testing. Device reliability parameter testing includes: reliability testing of devices manufactured using conventional processes and reliability testing of 3D additive manufacturing devices.

[0092] The principle and effect of the above technical solution are as follows: In the 3D additive manufacturing process, a multi-functional 3D additive manufacturing inspection group performs non-destructive and non-contact real-time inspection of semiconductor electronic and optoelectronic devices. Real-time inspection includes: measuring semiconductor structure using X-ray diffraction, detecting thin film characteristics using polarization optics, monitoring the process using secondary ion mass spectrometry, and real-time detection of process and device parameters using surface capacitance, voltage, and impedance meters. After the final 3D additive manufacturing is completed, final 3D additive manufacturing inspection is performed. This final inspection includes: device size and appearance design standard inspection, and device basic functionality inspection. Performance and reliability testing of 3D additive manufacturing devices includes: basic functional parameter testing, special functional parameter testing, and performance and reliability testing of 3D additive manufacturing devices; basic functional parameter testing includes: basic input parameters, basic output parameters, and basic leakage current parameters; special functional parameters include: special input parameters, special output parameters, and special leakage current parameters; performance and reliability testing of 3D additive manufacturing devices includes: device design performance parameter testing and device reliability parameter testing; design performance parameter testing includes: high-frequency testing, low-frequency testing, and power parameter testing; device reliability parameter testing includes: reliability testing of devices manufactured using conventional processes and reliability testing of 3D additive manufacturing devices.

[0093] Calculate the average gradient value of real-time inspection X-ray diffraction images in 3D additive manufacturing:

[0094]

[0095] Wherein, TUVLi,j represents the average gradient value of the X-ray diffraction image for real-time detection in 3D additive manufacturing, i represents the i-th pixel gray value in the x-direction of the X-ray diffraction image for real-time detection in 3D additive manufacturing, j represents the j-th pixel gray value in the y-direction of the X-ray diffraction image for real-time detection in 3D additive manufacturing, HUE represents the maximum pixel gray value in the x-direction of the X-ray diffraction image for real-time detection in 3D additive manufacturing, HVF represents the maximum pixel gray value in the y-direction of the X-ray diffraction image for real-time detection in 3D additive manufacturing, TUi,j represents the gradient in the x-direction of the X-ray diffraction image for real-time detection in 3D additive manufacturing, TVi,j represents the gradient in the y-direction of the X-ray diffraction image for real-time detection in 3D additive manufacturing, and SUt represents the gradient error coefficient. The larger the average gradient value of the X-ray diffraction image for real-time detection in 3D additive manufacturing, the larger the average difference between adjacent pixels in the X-ray diffraction image for real-time detection in 3D additive manufacturing, the higher the image clarity and the higher the detection accuracy. By calculating the average gradient value of the X-ray diffraction image for real-time detection in 3D additive manufacturing, the real-time detection accuracy of 3D additive manufacturing is significantly increased.

[0096] In one embodiment, S500 includes:

[0097] S501: Determine the type of electrical connection metal and electrical connection design parameters according to the electrical connection technology requirements of semiconductor electronic and optoelectronic devices;

[0098] S502: Select the 3D packaging type according to the application technology requirements of semiconductor electronic and optoelectronic devices;

[0099] S503: Through a multi-type integrated package, based on the type of electrical connection metal, electrical connection design parameters, and three-dimensional package type, it performs electrical connection and packaging of semiconductor electronic and optoelectronic devices;

[0100] The principle and effect of the above technical solution are as follows: the type of electrical connection metal and the electrical connection design parameters are determined according to the electrical connection technical requirements of semiconductor electronic and optoelectronic devices;

[0101] The 3D packaging type is selected based on the application technology requirements of semiconductor electronic and optoelectronic devices; through multi-type integrated packaging groups, the electrical connection and packaging of semiconductor electronic and optoelectronic devices are carried out according to the type of electrical connection metal, electrical connection design parameters and 3D packaging type.

[0102] In one embodiment, S600 includes:

[0103] S601: The local cloud data sharing group and the integrated design group share communication data storage; and when the local computing limit is reached, they can perform mutual communication and backup computing through cloud computing.

[0104] S602: Data sharing and storage includes all data and information from the shared storage integrated design group, the 3D additive intelligent manufacturing group, the 3D additive manufacturing multi-functional testing group, and the multi-type integrated packaging group;

[0105] S603: Enables data sharing, storage, interoperability, and backup computing between the platform's local end and the cloud via a local cloud data sharing group.

[0106] The principle and effect of the above technical solution are as follows: the local cloud data sharing group and the integrated design group communicate and share data storage; and when the local computing on the platform reaches its limit, they perform mutual communication and backup computing through cloud computing; the data sharing and storage includes: sharing all data and information of the integrated design group, the 3D additive intelligent manufacturing group, the 3D additive manufacturing multi-functional testing group, and the multi-type integrated packaging group; the local cloud data sharing group performs data sharing and storage and data sharing, mutual communication and backup computing between the local platform and the cloud; and improves the reliability and scale of storage computing.

[0107] In one embodiment, S201 includes:

[0108] S2031: Establish the integrated design group design unit; the integrated design group includes: semiconductor device and packaging design unit and semiconductor device 3D additive manufacturing CAD computer-aided design unit;

[0109] S2032: Read the design-related information of the semiconductor electronic and optoelectronic devices to be manufactured; semiconductor electronic and optoelectronic devices include: semiconductor electronic devices, semiconductor optoelectronic devices or semiconductor power devices; the design-related information of semiconductor electronic and optoelectronic devices includes: device application, device performance and device reliability requirements.

[0110] The principle and effect of the above technical solution are as follows: to build an integrated design group design unit; the integrated design group includes: semiconductor device and packaging design unit and semiconductor device 3D additive manufacturing CAD computer-aided design unit;

[0111] Read relevant information about the design of semiconductor electronic and optoelectronic devices to be manufactured; semiconductor electronic and optoelectronic devices include: semiconductor electronic devices, semiconductor optoelectronic devices or semiconductor power devices; relevant information about the design of semiconductor electronic and optoelectronic devices includes: device application, device performance and device reliability requirements; to make the relevant information about the design of semiconductor electronic and optoelectronic devices more complete and accurate, and increase the reliability of the design.

[0112] In one embodiment, S302 includes:

[0113] S3021: Transfer the detailed 3D additive manufacturing process to the 3D additive manufacturing CAM computer-aided manufacturing unit;

[0114] S3022: Intelligent 3D additive manufacturing of semiconductor electronic and optoelectronic devices using 3D additive manufacturing (CAM) computer-aided manufacturing units;

[0115] S3023: 3D additive intelligent manufacturing includes: 3D ceramic material sintering and melting, 3D semiconductor material sintering and melting, 3D metal material sintering and melting, 3D polymer nanomaterial processing, 3D material component heat treatment, 3D plasma etching and chemical cleaning; in the 3D additive intelligent manufacturing process, each layer of the required sintering and melting area is solidified into a solid by intelligently controlled selective ultraviolet irradiation; the final component undergoes a heat treatment degreasing process; 3D semiconductor material sintering and melting includes: semiconductor binder spraying, selectively applying a mixture of high-purity semiconductor material and binder layer by layer; the final component undergoes a heat treatment degreasing process; semiconductor powder sintering; using a high-power laser to sinter high-purity semiconductor powder of different conductivity types to the required positions of the device layer by layer; semiconductor nanoparticle spraying, depositing a liquid suspension containing solid semiconductor nanoparticles of different conductivity types layer by layer through a nano-nozzle as needed; semiconductor photopolymerization, using a photopolymerization DLP digital light processing additive manufacturing machine, solidifying each layer of the required sintering and melting area into a solid by intelligently controlled selective ultraviolet irradiation of photosensitive resin containing semiconductor microparticles of different conductivity types.

[0116] The principle and effect of the above technical solution are as follows: Detailed 3D additive manufacturing processes are transferred to a 3D additive manufacturing CAM (Computer-Aided Manufacturing) unit; 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices is performed through the 3D additive manufacturing CAM unit; 3D additive intelligent manufacturing includes: 3D ceramic material sintering and melting, 3D semiconductor material sintering and melting, 3D metal material sintering and melting, 3D polymer nanomaterial processing, 3D material component heat treatment, 3D plasma etching, and chemical cleaning; during the 3D additive intelligent manufacturing process, selective ultraviolet irradiation is used to sinter the required materials. Each layer of the molten region solidifies into a solid; the final component undergoes a heat treatment degreasing process; 3D semiconductor material sintering and melting includes: semiconductor binder spraying, selectively applying a mixture of high-purity semiconductor material and binder layer by layer; the final component undergoes a heat treatment degreasing process; semiconductor powder sintering; using a high-power laser to sinter high-purity semiconductor powders of different conductivity types layer by layer to the required positions in the device; semiconductor nanoparticle spraying, depositing a liquid suspension containing solid semiconductor nanoparticles of different conductivity types layer by layer as needed through a nano-nozzle; semiconductor photopolymerization, through photopolymerization DLP digital light processing... The additive manufacturing machine uses intelligently controlled selective ultraviolet irradiation to solidify each layer of the desired sintering and melting region of photosensitive resin containing semiconductor nanoparticles of different conductivity types into a solid state. It also deposits a liquid suspension containing solid semiconductor nanoparticles of different conductivity types layer by layer through a nano-nozzle. The process includes uniformly mixing the liquid suspension through a dual-wave mixing spiral cavity. The dual-wave mixing spiral cavity includes: an inner corrugated surface at the bottom of the cavity, an inner corrugated surface at the top of the cavity, a suspension inlet, a suspension outlet, and an inner spiral surface on the side of the cavity. The spiral surface on the inner spiral surface of the cavity... The spiral groove rises spirally from the inlet end of the suspension to the outlet end. When the liquid suspension enters the double-wave mixing spiral cavity through the inlet, it is mixed in a wave-like state under the action of the corrugated surface at the bottom of the cavity. When it passes through the spiral groove on the inner spiral surface of the cavity side, fluid reflux occurs. When the suspension fills the cavity, it forms a reverse wave flow again through the corrugated surface at the top of the cavity. After the suspension is uniformly mixed, it flows out through the outlet and is deposited layer by layer as needed through the nano-nozzle. This improves the mixing uniformity of liquid suspensions of solid semiconductor nanoparticles with different conductivity types and enhances the performance of semiconductor electronic and optoelectronic devices as well as power devices.

[0117] In one embodiment, S402 includes:

[0118] S4021: After the 3D additive manufacturing process is completed, set up the final inspection node and conduct the final inspection test of the 3D additive manufacturing process.

[0119] S4022: Final testing for 3D additive manufacturing includes: device size and appearance design standard testing, device basic functional parameter testing, device special functional parameter testing, and 3D additive manufacturing device performance and reliability testing; device basic functional parameter testing includes: device basic input parameters, device basic output parameters, and device basic leakage current parameters; device special functional parameters include: device special input parameters, device special output parameters, and device special leakage current parameters; 3D additive manufacturing device performance and reliability testing includes: device design performance parameter testing and device reliability parameter testing; design performance parameter testing includes: high-frequency testing, low-frequency testing, and power parameter testing; device reliability parameter testing includes: reliability testing of devices manufactured using conventional processes and reliability testing of 3D additive manufacturing devices.

[0120] The principle and effect of the above technical solution are as follows: After the 3D additive manufacturing is completed, a final inspection node is set up to conduct the final inspection and testing of 3D additive manufacturing.

[0121] The final testing for 3D additive manufacturing includes: device size and appearance design standard testing, device basic functional parameter testing, device special functional parameter testing, and 3D additive manufacturing device performance and reliability testing; device basic functional parameter testing includes: device basic input parameters, device basic output parameters, and device basic leakage current parameters; device special functional parameters include: device special input parameters, device special output parameters, and device special leakage current parameters; 3D additive manufacturing device performance and reliability testing includes: device design performance parameter testing and device reliability parameter testing; design performance parameter testing includes: high-frequency testing, low-frequency testing, and power parameter testing; device reliability parameter testing includes: reliability testing of devices manufactured using conventional processes and reliability testing of 3D additive manufacturing devices; 3D additive manufacturing device reliability testing includes: using the theoretical test target parameters of 3D additive manufacturing device reliability testing as the final target of structural reliability testing. The system continuously and synchronously outputs theoretical test target parameters and collects test data of the 3D additive manufacturing device structure. Based on the theoretical test target parameters, it calculates the instantaneous measurement error, steady-state measurement error, and average measurement error of the 3D additive manufacturing device structure test data. It then performs weighted calculations on the instantaneous measurement error, steady-state measurement error, and average measurement error. When stability is measured through instantaneous impact, the system intelligently increases the weight of the instantaneous measurement error to obtain the weighted instantaneous measurement error. When the device structure test is in a stable state, the system intelligently increases the weight of the steady-state measurement error to obtain the weighted steady-state measurement error. When the device structure test is in the final test stage, it performs the mean calculation of the weighted instantaneous measurement error and the weighted steady-state measurement error to obtain the weighted average measurement error of the measurement process. It performs measurement process error compensation, significantly improving the accuracy of reliability testing for 3D additive manufacturing devices and enhancing the reliability of semiconductor electronic and optoelectronic devices as well as power devices.

[0122] Although embodiments of the present invention have been disclosed above, they are not limited to the applications listed in the specification and embodiments. They can be applied to various fields suitable for the present invention. Other modifications can be easily made by those skilled in the art. Therefore, without departing from the general concept defined by the claims and their equivalents, the present invention is not limited to the specific details and illustrations shown and described herein.

Claims

1. A method for 3D additive manufacturing of electronic and optoelectronic devices, characterized in that, include: S100: Building an intelligent integrated platform for 3D additive manufacturing; The 3D additive manufacturing intelligent integrated platform includes: an integrated design group, a 3D additive intelligent manufacturing group, a 3D additive manufacturing multi-functional testing group, a multi-type integrated packaging group, and a local cloud data sharing group. S200: Through the integrated design group, the overall process design of 3D additive manufacturing of semiconductor electronic and optoelectronic devices is carried out, and the overall design data of 3D additive manufacturing is obtained. S300: Based on the overall design data of 3D additive manufacturing, the 3D additive intelligent manufacturing group generates detailed 3D additive manufacturing processes to carry out 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices. S400: Through the 3D additive manufacturing multi-functional inspection group, real-time inspection and final inspection of 3D additive manufacturing are carried out; S500: Enables electrical connection and packaging of semiconductor electronic and optoelectronic devices through a multi-type integrated package; S600: Enables data sharing, storage, interoperability, and backup computing between the platform's local end and the cloud via a local cloud data sharing group; The S300 includes: S301: Based on the overall design data of 3D additive manufacturing, the detailed process of 3D additive manufacturing is generated through the 3D additive intelligent manufacturing group; the 3D additive intelligent manufacturing group includes: 3D additive manufacturing CAM computer-aided manufacturing unit and 3D additive manufacturing special process unit; S302: Based on the detailed 3D additive manufacturing process, 3D additive intelligent manufacturing of semiconductor electronic and optoelectronic devices is carried out through the 3D additive manufacturing CAM computer-aided manufacturing unit; 3D additive intelligent manufacturing includes: 3D ceramic material sintering and melting, 3D semiconductor material sintering and melting, 3D metal material sintering and melting, 3D polymer nanomaterial processing, 3D material component heat treatment, 3D plasma etching and chemical cleaning; S302 includes: S3021: Transfer the detailed 3D additive manufacturing process to the 3D additive manufacturing CAM computer-aided manufacturing unit; S3022: Intelligent 3D additive manufacturing of semiconductor electronic and optoelectronic devices using 3D additive manufacturing (CAM) computer-aided manufacturing units; S3023: 3D additive intelligent manufacturing adopts 3D semiconductor material sintering and melting; 3D semiconductor material sintering and melting adopts semiconductor nanoparticle spraying, which deposits a liquid suspension containing solid semiconductor nanoparticles of different conductivity types layer by layer as needed through a nano-spray nozzle; The process of depositing a liquid suspension containing solid semiconductor nanoparticles of different conductivity types layer by layer through a nano-nozzle includes: uniformly mixing the liquid suspension containing solid semiconductor nanoparticles of different conductivity types through a dual-wave mixing spiral cavity; the dual-wave mixing spiral cavity includes: an inner corrugated surface at the bottom of the cavity, an inner corrugated surface at the top of the cavity, a suspension inlet, a suspension outlet, and an inner spiral surface on the side of the cavity; the spiral grooves on the inner spiral surface on the side of the cavity spirally rise from the suspension inlet end to the suspension outlet end; when the liquid suspension enters the dual-wave mixing spiral cavity through the suspension inlet, it is mixed in a wave-like state under the action of the inner corrugated surface at the bottom of the cavity, and fluid reversal occurs when it passes through the spiral grooves on the inner spiral surface on the side of the cavity; when the suspension fills the cavity, it forms a reverse wave flow again through the inner corrugated surface at the top of the cavity, and the suspension flows out through the suspension outlet after uniform mixing, and is deposited layer by layer through the nano-nozzle as needed.

2. The method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 1, characterized in that, S100 includes: S101: Establish a 3D additive manufacturing connection structure framework, integrating the design group's communication connection to the local cloud data sharing group and the 3D additive intelligent manufacturing group; the 3D additive intelligent manufacturing group is electrically connected to the integrated design group and the 3D additive manufacturing multi-functional testing group respectively; the multi-type integrated packaging group is electrically connected to the 3D additive intelligent manufacturing group and the 3D additive manufacturing multi-functional testing group respectively. S102: Based on the 3D additive manufacturing connection structure framework, create a 3D additive manufacturing intelligent integrated platform.

3. The method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 1, characterized in that, S200 includes: S201: Read relevant design information of semiconductor electronic and optoelectronic devices to be manufactured through the integrated design group; S202: Based on semiconductor electronic and optoelectronic device design information, the preliminary device manufacturing specifications and preliminary device packaging specifications are automatically selected through the semiconductor device and packaging design unit; S203: Based on the preliminary specifications for device manufacturing and device packaging, design the overall 3D additive manufacturing process using the semiconductor device 3D additive manufacturing CAD computer-aided design unit; obtain the overall 3D additive manufacturing design data based on the overall 3D additive manufacturing process design; and transmit the overall 3D additive manufacturing design data to the 3D additive intelligent manufacturing group.

4. The method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 1, characterized in that, The S300 includes: S303: Special semiconductor manufacturing processes are performed using special 3D additive manufacturing process units; the special 3D additive manufacturing process units include: special semiconductor laser sintering subunit, special semiconductor melt epitaxy subunit, special semiconductor atomic layer epitaxy subunit, special semiconductor heat treatment subunit, special semiconductor ion beam etching subunit, and special semiconductor chemical cleaning subunit.

5. The method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 1, characterized in that, The S400 includes: S401: In the 3D additive manufacturing process, a multi-functional 3D additive manufacturing inspection group is used to perform non-destructive and non-contact real-time inspection of semiconductor electronic and optoelectronic devices. The real-time inspection of 3D additive manufacturing includes: measuring semiconductor structure through X-ray diffraction, detecting thin film characteristics through polarization optics, monitoring the process through secondary ion mass spectrometry, and detecting process parameters and device parameters in real time through surface capacitance, voltage, and impedance meters. S402: After the 3D additive manufacturing process is completed, the final 3D additive manufacturing test is performed.

6. The method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 1, characterized in that, The S500 includes: S501: Determine the type of electrical connection metal and electrical connection design parameters according to the electrical connection technology requirements of semiconductor electronic and optoelectronic devices; S502: Select the 3D packaging type according to the application technology requirements of semiconductor electronic and optoelectronic devices; S503: Through a multi-type integrated package, it performs electrical connection and packaging of semiconductor electronic and optoelectronic devices according to the type of electrical connection metal, electrical connection design parameters and three-dimensional packaging type.

7. The method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 1, characterized in that, The S600 includes: S601: The local cloud data sharing group and the integrated design group share communication data storage; and when the local computing limit is reached, they can perform mutual communication and backup computing through cloud computing. S602: Data sharing and storage includes all data and information from the shared storage integrated design group, the 3D additive intelligent manufacturing group, the 3D additive manufacturing multi-functional testing group, and the multi-type integrated packaging group; S603: Enables data sharing, storage, interoperability, and backup computing between the platform's local end and the cloud via a local cloud data sharing group.

8. A method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 3, characterized in that, S201 includes: S2031: Establish the integrated design group design unit; the integrated design group includes: semiconductor device and packaging design unit and semiconductor device 3D additive manufacturing CAD computer-aided design unit; S2032: Read the design-related information of the semiconductor electronic and optoelectronic devices to be manufactured; semiconductor electronic and optoelectronic devices include: semiconductor electronic devices, semiconductor optoelectronic devices or semiconductor power devices; the design-related information of semiconductor electronic and optoelectronic devices includes: device application, device performance and device reliability requirements.

9. A method for 3D additive manufacturing of electronic and optoelectronic devices as described in claim 5, characterized in that, S402 includes: S4021: After the 3D additive manufacturing process is completed, set up the final inspection node and conduct the final inspection test of the 3D additive manufacturing process. S4022: Final testing for 3D additive manufacturing includes: device size and appearance design standard testing, device basic functional parameter testing, device special functional parameter testing, and 3D additive manufacturing device performance and reliability testing; device basic functional parameter testing includes: device basic input parameters, device basic output parameters, and device basic leakage current parameters; device special functional parameters include: device special input parameters, device special output parameters, and device special leakage current parameters; 3D additive manufacturing device performance and reliability testing includes: device design performance parameter testing and device reliability parameter testing; design performance parameter testing includes: high-frequency testing, low-frequency testing, and power parameter testing; device reliability parameter testing includes: reliability testing of devices manufactured using conventional processes and reliability testing of 3D additive manufacturing devices.

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