graphite carrier plate

By designing grooves and arc-shaped protrusions on the surface of the graphite carrier disk, a turbulent current-carrying field is formed, which solves the rotational obstruction and quality problems caused by the accumulation of by-products during epitaxial wafer growth, and improves the uniformity and crystal quality of the epitaxial wafer.

CN116516472BActive Publication Date: 2026-06-09HC SEMITEK (SUZHOU) CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HC SEMITEK (SUZHOU) CO LTD
Filing Date
2023-03-30
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

During epitaxial wafer growth, the accumulation of byproducts on the sidewalls of the planetary disk hinders rotation, affecting uniformity and epitaxial wafer quality. Furthermore, the shedding of accumulated byproducts may damage the growing epitaxial wafer.

Method used

A graphite carrier disk was designed with multiple first grooves on its surface and arc-shaped protrusions distributed on the sidewalls of the grooves to form a turbulent flow field, thereby avoiding the accumulation of by-products and preventing them from falling off.

Benefits of technology

This improves the uniformity and crystal quality of the epitaxial wafer, prevents damage to the epitaxial wafer from byproducts, and ensures the stable rotation of the planetary disk.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present disclosure provides a graphite carrier disc, and relates to the technical field of semiconductors. The graphite carrier disc comprises a graphite cover disc, a bearing surface of the graphite cover disc has a plurality of first grooves, side walls of the first grooves have a plurality of convex structures, and the plurality of convex structures are distributed along a circumferential direction of the first grooves. During growth of an epitaxial wafer, part of the carrier gas flows into a gap region between the side walls of the first grooves and a planetary disc. The plurality of convex structures on the side walls of the first grooves make the carrier gas flowing into the gap region more likely to form a turbulent carrier gas field, the turbulent carrier gas field makes it difficult for by-products of a side reaction to accumulate in the gap region, avoids hindering rotation of the planetary disc, thereby affecting uniformity of the epitaxial wafer, and also prevents part of the accumulated by-products from being thrown onto the epitaxial wafer being grown when the planetary disc rotates, which is conducive to improving crystal quality of the epitaxial wafer.
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Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a graphite carrier disk. Background Technology

[0002] Light-emitting diodes (LEDs) are highly influential new products in the optoelectronics industry. They are characterized by their small size, long lifespan, rich and colorful colors, and low energy consumption, and are widely used in display devices.

[0003] Epitaxial wafer growth is a crucial step in the fabrication of light-emitting diodes (LEDs). Epitaxial wafer growth is typically performed in an MOCVD (Metal-organic Chemical Vapor Deposition) reaction chamber. The reaction chamber contains a graphite carrier disk with multiple circular grooves on its surface. Planetary disks are placed within these grooves to hold the substrate.

[0004] During the growth of epitaxial wafers, a regular airflow field exists in the gap between the sidewalls of the planetary disks and the sidewalls of the grooves, causing byproducts to accumulate continuously. When too many byproducts accumulate on the sidewalls of the planetary disks, the rotation of the planetary disks is hindered, affecting normal production. Furthermore, the degree of byproduct accumulation varies on the sidewalls of each planetary disk, resulting in different effects on each disk and consequently, differences in the rotational speed of each disk, thus affecting the final uniformity of the epitaxial wafer. Byproducts also have the potential to detach; if detached byproducts fall onto the growing epitaxial wafer, they can significantly impact the quality of the final epitaxial wafer. Summary of the Invention

[0005] This disclosure provides a graphite carrier disk that can solve the problems of uneven thickness and excessive by-product impurities after epitaxial wafer forming in related technologies. The technical solution is as follows:

[0006] The graphite carrier disk includes a graphite cover disk. The bearing surface of the graphite cover disk has a plurality of first grooves. The sidewalls of the first grooves have a plurality of protrusions. The plurality of protrusions are distributed along the circumferential direction of the first grooves. The surface of the protrusions near the axis of the first groove is an arc-shaped convex surface. The cross-section and longitudinal section of the arc-shaped convex surface are both arcs. The cross-section is parallel to the bearing surface, and the longitudinal section is perpendicular to the cross-section and passes through the axis of the first groove.

[0007] Optionally, the line connecting the two ends of the longitudinal section of the arcuate convex surface is parallel to the axis of the first groove.

[0008] Optionally, the longitudinal section of the arc-shaped convex surface is a semi-circular arc.

[0009] Optionally, the longitudinal section of the arc-shaped convex surface is a quarter-circle arc, and the tangent of the quarter-circle arc at one end near the bottom of the first groove is parallel to the axis of the first groove.

[0010] Optionally, the graphite cover disk includes a plurality of graphite cover members and a graphite disk, the plurality of graphite cover members are located on the first surface of the graphite disk and are detachably connected to the graphite disk respectively, and the first surface of the graphite disk and the plurality of graphite cover members form a plurality of the first grooves.

[0011] Optionally, the plurality of graphite covers include a plurality of first graphite covers, a plurality of second graphite covers, and a plurality of third graphite covers; the plurality of second graphite covers are located at the center of the graphite disk and are distributed around the central circumference of the graphite disk, with adjacent second graphite covers spliced ​​together; the plurality of first graphite covers and the plurality of third graphite covers are located at the edge of the graphite disk and are distributed in multiple groups, the multiple groups being distributed along the edge of the graphite disk, each group including two first graphite covers distributed along the edge of the graphite disk and one third graphite cover located between the two first graphite covers.

[0012] Optionally, the graphite cover has a plurality of second grooves on the surface near the graphite disk, and the graphite disk has a plurality of third grooves on the surface near the graphite cover. The graphite cover and the graphite disk are connected by a first connector, which is located in the second grooves and the third grooves.

[0013] Optionally, the graphite cover includes a cover body and an extension, the extension being located at the bottom of the first groove and connected to the cover body.

[0014] Optionally, the graphite carrier disk further includes a plurality of planetary disks, which are respectively located in the plurality of first grooves, and there is a gap between the surface of the planetary disk near the bottom of the first groove and the extension.

[0015] Optionally, the planetary disk has a fourth groove on the surface near the graphite disk, and the graphite disk has a fifth groove on the surface near the planetary disk. The graphite disk and the planetary disk are connected by a second connector, which is located in the fourth and fifth grooves.

[0016] The beneficial effects of the technical solutions provided in this disclosure include at least the following:

[0017] A graphite carrier disk is placed in a chemical vapor deposition reaction chamber. During the epitaxial wafer growth process, a first groove on the surface of the graphite carrier disk is used to place planetary disks, and the substrate is placed on multiple planetary disks. During the epitaxial wafer growth process, some of the carrier gas flows into the gap region between the sidewall of the first groove and the planetary disks. The multiple protrusions on the sidewall of the first groove make it easier for the carrier gas flowing into this gap region to form a turbulent flow field. The turbulent flow field makes it difficult for by-products to accumulate in this gap region, avoiding obstruction of the planetary disk rotation, which is beneficial to improving the uniformity of the epitaxial wafer. It also prevents some of the accumulated by-products from being thrown onto the growing epitaxial wafer when the planetary disks rotate, which is beneficial to improving the crystal quality of the epitaxial wafer. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a top view of a graphite carrier disk provided in an embodiment of this disclosure;

[0020] Figure 2 This is a partial cross-sectional structural diagram of a graphite carrier disk provided in an embodiment of this disclosure;

[0021] Figure 3 This is a partial structural diagram of the longitudinal section of another graphite carrier provided in an embodiment of this disclosure;

[0022] Figure 4 This is a partial cross-sectional structural diagram of a graphite carrier disk provided in an embodiment of this disclosure. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0024] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the element or object preceding “comprising” or “including” encompasses the element or object listed following “comprising” or “including” and its equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described object changes.

[0025] Figure 1 This is a top view schematic diagram of a graphite carrier disk provided in an embodiment of this disclosure, as shown below. Figure 1 As shown, the graphite carrier disk includes a graphite cover disk 1. The bearing surface of the graphite cover disk 1 has multiple first grooves 2, and the sidewalls of the first grooves 2 have multiple protrusions 3. The multiple protrusions 3 are distributed along the circumferential direction of the first grooves 2. The surface of the protrusions 3 near the axis of the first groove 2 is an arc-shaped convex surface 4. The cross-section and longitudinal section of the arc-shaped convex surface 4 are both arcs. Specifically, the cross-section of the arc-shaped convex surface 4 is parallel to the bearing surface of the graphite cover disk 1, the longitudinal section of the arc-shaped convex surface 4 is perpendicular to the cross-section of the arc-shaped convex surface 4, and the longitudinal section of the arc-shaped convex surface 4 passes through the axis of the first groove 2.

[0026] A graphite carrier disk is placed in a chemical vapor deposition reaction chamber. During the epitaxial wafer growth process, the first groove 2 on the surface of the graphite carrier disk is used to place planetary disks 15, and the substrate is placed on multiple planetary disks 15. During the epitaxial wafer growth process, some of the carrier gas flows into the gap region 20 between the sidewall of the first groove 2 and the planetary disks 15. Multiple protrusions 3 on the sidewall of the first groove 2 make it easier for the carrier gas flowing into the gap region 20 to form a turbulent carrier field. The turbulent carrier field makes it difficult for by-products to accumulate in the gap region 20, avoiding obstruction of the rotation of the planetary disks 15, which would affect the uniformity of the epitaxial wafer. It also prevents some of the accumulated by-products from being thrown onto the growing epitaxial wafer when the planetary disks 15 rotate, which is beneficial to improving the crystal quality of the epitaxial wafer.

[0027] like Figure 1As shown, the graphite cover disk 1 includes multiple graphite cover pieces 5 and a graphite disk 6. The multiple graphite cover pieces 5 are located on the first surface of the graphite disk 6, and the multiple graphite cover pieces 5 are detachably connected to the graphite disk 6. The first surface of the graphite disk 6 and the multiple graphite cover pieces 5 form multiple first grooves 2.

[0028] The graphite cover 5 is made of graphite, which has good thermal conductivity, and its overall structure is resistant to high temperature, high pressure, and corrosion. The graphite disk 6 has two opposing circular surfaces and a cylindrical side connecting the two circular surfaces. The first surface of the graphite disk 6 can be either of the two circular surfaces.

[0029] Since multiple graphite covers 5 are detachably connected to the graphite disk 6, when any one of the graphite covers 5 is damaged, the damaged graphite cover 5 can be removed from the first surface of the graphite disk 6 and replaced with a graphite cover 5 of the same size.

[0030] Furthermore, since the graphite cover 5 and the graphite disk 6 are detachably connected, they can be processed separately during production. When processing the graphite cover 5, the protruding structure 3 can be machined on its side. After processing, the graphite cover 5 and the graphite disk 6 are assembled together, making the processing of the protruding structure 3 more convenient and ensuring that the machined arc-shaped convex surface 4 meets the design requirements.

[0031] During the epitaxial wafer growth process, a planetary disk 15 is placed in the first groove 2, and the substrate for growing the epitaxial wafer is placed on the planetary disk 15. Epitaxial wafers come in various diameter specifications, such as four-inch and six-inch. When different sizes of epitaxial wafers need to be grown, planetary disks 15 of different sizes need to be replaced. In order to match different sizes of planetary disks 15, the inner diameter of the first groove 2 also needs to be adjusted.

[0032] In this example, the graphite carrier disk may include multiple different first graphite covers 7, multiple different second graphite covers 8, and multiple different third graphite covers 9. For example, each of the multiple different first graphite covers 7 has a different curvature for the sidewalls forming the first groove 2. One first graphite cover 7, one second graphite cover 8, and one third graphite cover 9 can form a first groove 2 of a certain diameter, and another first graphite cover 7, another second graphite cover 8, and another third graphite cover 9 can form a first groove 2 of a different diameter. That is, when it is necessary to replace the planetary disk 15 with a different size, different diameters of the first groove 2 can be formed by disassembling and replacing different first graphite covers 7, second graphite covers 8, and third graphite covers 9, so that the diameter of the first groove 2 matches the size of the planetary disk 15.

[0033] like Figure 1 As shown, the plurality of graphite covers 5 include a plurality of first graphite covers 7, a plurality of second graphite covers 8, and a plurality of third graphite covers 9. The plurality of second graphite covers 8 are located at the center of the graphite disk 6 and are distributed around the central circumference of the graphite disk 6, with adjacent second graphite covers 8 spliced ​​together; the plurality of first graphite covers 7 and the plurality of third graphite covers 9 are located at the edge of the graphite disk 6 and are distributed in multiple groups, with multiple groups distributed along the edge of the graphite disk 6. Each group includes two first graphite covers 7 distributed along the edge of the graphite disk 6 and one third graphite cover 9 located between the two first graphite covers 7.

[0034] Adjacent second graphite covers 8 are spliced ​​together, meaning that among multiple second graphite covers 8, the edges of adjacent second graphite covers 8 are in contact.

[0035] In this example, there are four second graphite covers 8 at the center of the graphite disk 6, and multiple first graphite covers 7 and multiple third graphite covers 9 are distributed in eight groups at the edge of the graphite disk 6.

[0036] Optionally, the two first graphite cover pieces 7 and the third graphite cover piece 9 in the same group are spliced ​​together. When any one of the first graphite cover pieces 7 or the third graphite cover piece 9 in the same group is accidentally damaged, the accidentally damaged first graphite cover piece 7 or the third graphite cover piece in the group can be disassembled and replaced individually to extend the overall service life of the graphite carrier disk.

[0037] like Figure 1As shown, at least one graphite cover 5 has a positioning mark 25 on its surface. For example, among a plurality of third graphite covers 9 located at the edge of the graphite disk 6, one third graphite cover 9 has a positioning mark 25 on its surface, which is used to facilitate determining the orientation of the graphite cover disk 1 in the circumferential direction during epitaxial growth.

[0038] The first surface of the graphite disk 6, the first graphite cover 7, the second graphite cover 8 and the third graphite cover 9 form a first groove 2. The side walls of the first graphite cover 7, the second graphite cover 8 and the third graphite cover 9 that form the first groove 2 each have multiple protruding structures 3.

[0039] The graphite disk may include various first graphite covers 7, various second graphite covers 8, and various third graphite covers 9. For example, among the various first graphite covers 7, the shape or size of the protrusion structure 3 on the sidewall of each first graphite cover 7 is different. When one first graphite cover 7, one second graphite cover 8, and one third graphite cover 9 are disposed on the graphite disk 6, the sidewall of the formed first groove 2 has a first type of protrusion structure 3. When another first graphite cover 7, another second graphite cover 8, and another third graphite cover 9 are disposed on the graphite disk 6, the sidewall of the formed first groove 2 has a second type of protrusion structure 3.

[0040] In this embodiment, the first protrusion structure 3 and the second protrusion structure 3 are different, which may be different in shape or size. That is, when it is necessary to set a protrusion structure 3 of a different shape or size, different first graphite cover 7, second graphite cover 8 and third graphite cover 9 can be disassembled and replaced.

[0041] Figure 2 This is a partial cross-sectional structural diagram of a graphite carrier disk provided in an embodiment of this disclosure, as shown below. Figure 2 As shown, the graphite disk 6 has an airflow channel 21 inside, and the opening of the airflow channel 21 is located at the bottom of the first groove 2. The airflow channel 21 is used to inject airflow into the reaction chamber, and the airflow can provide rotational power to the planetary disk 15 placed at the bottom of the first groove 2.

[0042] The line connecting the two ends of the longitudinal section of the arc-shaped convex surface 4 is parallel to the axis of the first groove 2. Figure 2The image shows two parallel dashed lines indicating the connection between the two ends of the longitudinal section of the arc-shaped convex surface 4 and the axis of the first groove 2. The arc-shaped convex surface 4 is a spherical cap surface. When the airflow between the planetary disk 15 and the bottom surface of the first groove 2 flows to the slit region 20, most of the airflow will circulate along the surface of the spherical cap surface and reach the opening of the slit region 20 away from the graphite disk 6 before leaving the slit region 20. In the region between adjacent arc-shaped convex surfaces 4, the airflow velocity is very high, which can promote the generation of turbulence.

[0043] Figure 3 This is a partial structural diagram of the longitudinal section of another graphite carrier disk provided in this embodiment. The longitudinal section of the arc-shaped convex surface 4 is a quarter-circle arc, and the tangent at the end of the quarter-circle arc near the bottom of the first groove 2 is parallel to the axis of the first groove 2. The arc-shaped convex surface 4 is an approximate quarter-sphere. When the airflow between the planetary disk 15 and the bottom surface of the first groove 2 flows to the gap region 20, the airflow flows out along the surface of the arc-shaped convex surface 4. During the flow, it also bypasses the arc-shaped convex surface 4 and approaches the region between adjacent arc-shaped convex surfaces 4, which increases the airflow speed and promotes the generation of turbulence.

[0044] like Figure 2 As shown, the graphite cover 5 has a second groove 10 on the surface near the graphite disk 6, and the graphite disk 6 has a third groove 11 on the surface near the graphite cover 5. The graphite cover 5 and the graphite disk 6 are connected by a first connector 12, which is located in the second groove 10 and the third groove 11.

[0045] Since the first connector 12, the second groove 10 and the third groove 11 are all located inside the graphite cover disk 1, the outer surface of the graphite cover disk 1 is relatively smooth. The flow-carrying gas flowing through the outer surface of the graphite cover disk 1 will not be obstructed during its journey, and the by-products carried in the flow-carrying gas are not likely to accumulate continuously in local positions on the outer surface of the graphite cover disk 1.

[0046] Optionally, the first connecting member 12 is a rivet or a pin, wherein the pin can be a cylindrical pin or a cuboid pin. The pin can be made of quartz or an alloy. Using quartz or an alloy to make the pin can increase the wear resistance of the pin and thus extend the service life of the pin.

[0047] As an example, the first connector 12 is a cuboid pin. The graphite cover 5 and the graphite disk 6 are connected by the cuboid pin, which can be interference-fitted with the graphite disk 6 to reduce the torsional range between the graphite cover 5 and the graphite disk 6, making it difficult for the graphite cover 5 and the graphite disk 6 to rotate relative to each other.

[0048] In other examples, the first connector 12 may also be a cylindrical pin.

[0049] The graphite cover 5 and the graphite disk 6 can be connected by one or more first connectors 12. When only one first connector 12 is provided, it is easier to connect using a cylindrical pin.

[0050] For example, the cylindrical pin can be inserted into the third groove 11 first, and then the second groove 10 on the graphite cover 5 can be aligned with the cylindrical pin and assembled together. Since the cross-section of the cylindrical pin is circular, the second groove 10 is easier to align with the cylindrical pin. After the cylindrical pin is inserted into the second groove 10, the graphite cover 5 can be rotated to adjust its angle and place it in place. When only one cylindrical pin is used, the cylindrical pin is interference-fitted with the second groove 10 and the third groove 11, so that there is no relative rotation between the graphite cover 5 and the graphite disk 6.

[0051] In some examples, the graphite cover 5 and the graphite disk 6 can be connected by multiple first connectors 12. By setting multiple first connectors 12, the graphite cover 5 can be prevented from becoming loose relative to the graphite disk 6 under the combined action of the multiple first connectors 12, making the installation of the graphite cover 5 more stable.

[0052] like Figure 2 As shown, the graphite cover 5 includes a cover body 13 and an extension 14. The extension 14 is located at the bottom of the first groove 2 and is connected to the cover body 13.

[0053] For multiple graphite covers 5 forming the same first groove 2, the extensions 14 of these graphite covers 5 form a ring around the bottom of the first groove 2. When the planetary disk 15 is placed into the first groove 2, the extensions 14 can support the edge of the planetary disk 15 and keep the planetary disk 15 separated from the outlet of the airflow channel 21. When airflow is introduced into the reaction chamber through the airflow channel 21, the planetary disk 15 can be stably suspended at a certain height.

[0054] like Figure 1 As shown, the graphite carrier disk also includes multiple planetary disks 15, which are located in multiple first grooves 2.

[0055] The planetary disk 15 has two opposing circular surfaces and an arc-shaped side connecting the two circular surfaces. On either of the two circular surfaces, there is a sixth groove 22 for placing the substrate to be processed.

[0056] like Figure 2 As shown, there is a gap 16 between the surface of the planetary disk 15 near the bottom of the first groove 2 and the extension 14.

[0057] There is a gap 16 between the surface of the planetary disk 15 near the bottom of the first groove 2 and the extension 14, so that the planetary disk 15 does not directly contact the extension 14, ensuring that the rotation of the planetary disk 15 under the action of the airflow will not be hindered by friction, so that the planetary disk 15 always maintains a stable rotation state.

[0058] like Figure 2 As shown, the planetary disk 15 has a fourth groove 17 on the surface near the graphite disk 6, and the graphite disk 6 has a fifth groove 18 on the surface near the planetary disk 15. The graphite disk 6 and the planetary disk 15 are connected by a second connector 19. At least one of the multiple fourth grooves 17 is coaxial with the fifth groove 18. The second connector 19 is located in the fourth groove 17 and the fifth groove 18.

[0059] In some examples, the second connector 19 is a cylindrical pin.

[0060] When the second connector 19 is a cylindrical pin, there can be various mating forms between the second connector 19 and the fourth groove 17 and the fifth groove 18, for example:

[0061] 1. The second connector 19 is clearance-fitted with the fourth groove 17, and the second connector 19 is interference-fitted with the fifth groove 18.

[0062] 2. The second connector 19 is interference-fitted with the fourth groove 17, and the second connector 19 is clearance-fitted with the fifth groove 18.

[0063] 3. The second connector 19 is clearance-fitted with the fourth groove 17 and the fifth groove 18.

[0064] All three methods enable relative rotation between planetary disk 15 and graphite disk 6.

[0065] For example, the second connector 19 can be a metal structural component.

[0066] For example, in some examples, the second connector 19 can be made of molybdenum alloy material, which has high wear resistance. Using molybdenum alloy material to make the second connector 19 is beneficial to extending its service life.

[0067] Figure 4 This is a partial structural schematic diagram of a cross-section of a graphite carrier disk provided in an embodiment of this disclosure. The cross-section is... Figure 2 Section AA in the example Figure 4 As shown, the cross-section of the arc-shaped convex surface 4 is a circular arc, and the central angle corresponding to the circular arc is less than or equal to 180°.

[0068] Multiple arc-shaped convex surfaces 4 are arranged on the sidewall of the graphite cover 5. For the cross-section of each arc-shaped convex surface 4, the distances from the two endpoints 24 of the arc to the second connector 19 can be equal, i.e. Figure 4 The distance L1 shown is equal to the distance L3, and the distance L2 from the midpoint 23 of the arc to the second connector 19 is less than the distance L1. This causes the airflow between the planetary disk 15 and the bottom surface of the first groove 2 to accelerate towards the area between adjacent arc convex surfaces 4 under the action of the arc convex surface 4, thus disrupting the airflow.

[0069] During the epitaxial wafer growth process in the reaction chamber, the carrier gas flows through the gap region 20 between the sidewall of the graphite cap 5 and the planetary disk 15. As the carrier gas passes through the gap region 20, some of it is affected by the protruding structure 3. When the carrier gas flows over the surface of the protruding structure 3, the viscous drag slows down the flow velocity. Here, the Reynolds number is introduced as a dimensionless number to characterize the stability of the fluid flow, as described below:

[0070]

[0071] Where ρ represents the density of the carrier gas, μ represents the viscosity coefficient of the carrier gas, L represents the characteristic scale of the flow field, v represents the velocity of the carrier gas, and the Reynolds number indicates the stability of the fluid motion. A higher Reynolds number indicates a more unstable flow field, making it more prone to turbulence under boundary disturbances. A lower Reynolds number makes it easier for disturbances to be counteracted by surface viscosity, allowing the fluid to maintain a laminar flow state.

[0072] In this embodiment of the disclosure, the arc-shaped convex surface 4 of the protrusion structure 3 increases the Reynolds number of the flow-carrying gas flowing through the gap region 20. When the Reynolds number increases, the laminar flow at the boundary of the gap region 20 will transition earlier, generating small-scale and unpredictable turbulence on the surface. The turbulence can reduce the probability of byproducts accumulating in the gap region 20.

[0073] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A graphite carrier disk, characterized in that, The graphite carrier disk includes a graphite cover disk (1) and a plurality of planetary disks (15). The graphite cover disk (1) includes a plurality of graphite cover elements (5) and a graphite disk (6). The plurality of graphite cover elements (5) are located on the first surface of the graphite disk (6). The bearing surface of the graphite cover disk (1) has a plurality of first grooves (2). The sidewalls of the first grooves (2) have a plurality of protrusions (3). The plurality of protrusions (3) are distributed along the circumferential direction of the first grooves (2). The surface of the protrusions (3) near the axis of the first grooves (2) is an arc-shaped convex surface (4). The cross section and longitudinal section of the arc-shaped convex surface (4) are both arcs. The cross section is parallel to the bearing surface, and the longitudinal section is perpendicular to the cross section and passes through the axis of the first groove (2). The graphite cover (5) includes an extension (14) located at the bottom of the first groove (2), and a plurality of planetary disks (15) are located in the plurality of first grooves (2). There is a gap (16) between the planetary disks (15) near the bottom of the first groove (2) and the extension (14).

2. The graphite carrier disk according to claim 1, characterized in that, The line connecting the two ends of the longitudinal section of the arc-shaped convex surface (4) is parallel to the axis of the first groove (2).

3. The graphite carrier disk according to claim 2, characterized in that, The longitudinal section of the arc-shaped convex surface (4) is a semi-circular arc.

4. The graphite carrier disk according to claim 1, characterized in that, The longitudinal section of the arc-shaped convex surface (4) is a quarter circle arc, and the tangent of the quarter circle arc at one end near the bottom of the first groove (2) is parallel to the axis of the first groove (2).

5. The graphite carrier disk according to claim 1, characterized in that, The plurality of graphite covers (5) are detachably connected to the graphite disk (6), and the first surface of the graphite disk (6) and the plurality of graphite covers (5) form a plurality of the first grooves (2).

6. The graphite carrier disk according to claim 5, characterized in that, The plurality of graphite coverings (5) include a plurality of first graphite coverings (7), a plurality of second graphite coverings (8) and a plurality of third graphite coverings (9); the plurality of second graphite coverings (8) are located at the center of the graphite disk (6) and are distributed around the central circumference of the graphite disk (6), and adjacent second graphite coverings (8) are spliced ​​together; the plurality of first graphite coverings (7) and the plurality of third graphite coverings (9) are located at the edge of the graphite disk (6) and are distributed in a plurality of groups, the plurality of groups are distributed along the edge of the graphite disk (6), and each group includes two first graphite coverings (7) distributed along the edge of the graphite disk (6) and one third graphite covering (9) located between the two first graphite coverings (7).

7. The graphite carrier disk according to claim 5, characterized in that, The graphite cover (5) has a plurality of second grooves (10) on the surface near the graphite disk (6), and the graphite disk (6) has a plurality of third grooves (11) on the surface near the graphite cover (5). The graphite cover (5) and the graphite disk (6) are connected by a first connector (12), which is located in the second grooves (10) and the third grooves (11).

8. The graphite carrier disk according to claim 5, characterized in that, The graphite cover (5) includes a cover body (13), and the extension (14) is connected to the cover body (13).

9. The graphite carrier disk according to claim 1, characterized in that, The planetary disk (15) has a fourth groove (17) on the surface near the graphite disk (6), and the graphite disk (6) has a fifth groove (18) on the surface near the planetary disk (15). The graphite disk (6) and the planetary disk (15) are connected by a second connector (19), which is located in the fourth groove (17) and the fifth groove (18).