Display device

Abstract

A display device is provided. The display device includes a first bank including a first sub-bank and a second sub-bank disposed apart from each other on a base, a first electrode disposed on the first sub-bank, a second electrode disposed on the second sub-bank and spaced apart from the first electrode, and a light emitting element disposed between the first sub-bank and the second sub-bank, wherein each of the first sub-bank and the second sub-bank has a curved profile with a recess, and includes a first area adjacent to the light emitting element, the first electrode includes a first area extending to the light emitting element, the second electrode includes a first area extending to the light emitting element, and a width of the first area of the first electrode is different from a width of the first area of the second electrode.

Description

Technical Field

[0001] The disclosure relates to a display device. Background Technology

[0002] With the development of multimedia technology, display devices are becoming increasingly important. As a result, various display devices such as organic light-emitting diode (OLED) displays and liquid crystal display (LCD) displays are now in use.

[0003] Typical display devices include display panels such as organic light-emitting display panels or liquid crystal display (LCD) panels. Light-emitting display panels may include light-emitting elements. For example, light-emitting diodes (LEDs) include organic light-emitting diodes (OLEDs) that use organic materials as fluorescent materials and inorganic LEDs that use inorganic materials as fluorescent materials. Summary of the Invention

[0004] Technical issues

[0005] This disclosure provides a display device including a sub-dike having an outer surface facing a light-emitting element and having a concave curved shape.

[0006] The aspects and features of this disclosure provide a display device with improved light output efficiency.

[0007] It should be noted that the aspects of this disclosure are not limited to those described above, and those skilled in the art will clearly understand other aspects of this disclosure not mentioned through the following description.

[0008] Technical solution

[0009] According to a disclosed embodiment, a display device includes: a substrate; a first dam including a first sub-dam and a second sub-dam spaced apart from each other on the substrate; a first electrode on the first sub-dam; a second electrode on the second sub-dam and spaced apart from the first electrode; and a light-emitting element between the first sub-dam and the second sub-dam, wherein each of the first sub-dam and the second sub-dam has a first region having a concave curved shape in cross-section and adjacent to the light-emitting element, wherein the first electrode has a first portion extending toward the light-emitting element beyond the first sub-dam, wherein the second electrode has a first portion extending toward the light-emitting element beyond the second sub-dam, and wherein the width of the first portion of the first electrode is different from the width of the first portion of the second electrode.

[0010] The inclination angle of the outer surface of the first region of the first sub-dike and the inclination angle of the outer surface of the first region of the second sub-dike can increase along the thickness direction of the base.

[0011] Each of the first and second sub-dikes may also have a second region having an inclination angle of the outer surface that decreases along the thickness direction of the base.

[0012] The first electrode may be formed on the first sub-dike and along the surface shape of the first sub-dike, and the second electrode may be formed on the second sub-dike and along the surface shape of the second sub-dike.

[0013] The first electrode may also have a second portion on a first region of the first sub-dike, wherein the second electrode may also have a second portion on a first region of the second sub-dike, and wherein each of the second portions of the first electrode and the second portion of the second electrode may have a concave curved shape in cross-section.

[0014] Each of the first and second electrodes may include silver, aluminum, or an alloy thereof.

[0015] The second part of the first electrode and the second part of the second electrode can respectively face the opposite ends of the light-emitting element.

[0016] The display device may also include a via layer on a substrate and having a flat surface, wherein the first sub-dike and the second sub-dike may be directly on the via layer.

[0017] The first electrode may also have a second portion, which is on the first region of the first sub-dike and has a concave curved shape in cross-section, wherein the first portion of the first electrode may be on the via layer and is flat.

[0018] The first part of the first electrode may extend from the second part of the first electrode.

[0019] The height from the surface of the substrate to the top of the first region of the first sub-dike can be greater than the height from the surface of the substrate to the upper surface of the light-emitting element.

[0020] The first end of the light-emitting element may be stacked with the first portion of the first electrode in the thickness direction of the substrate, wherein the second end of the light-emitting element may be stacked with the first portion of the second electrode in the thickness direction of the substrate, and wherein the width of the first portion of the first electrode may be greater than the width of the first portion of the second electrode.

[0021] The width of the first end of the light-emitting element overlapping the first part of the first electrode in the thickness direction of the substrate can be greater than the width of the second end of the light-emitting element overlapping the first part of the second electrode in the thickness direction of the substrate.

[0022] The light-emitting element may include: a first semiconductor layer; a second semiconductor layer spaced apart from the first semiconductor layer; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer may be closer to the first end of the light-emitting element than to the second end of the light-emitting element, and wherein the first semiconductor layer may be closer to the second end of the light-emitting element than to the first end of the light-emitting element.

[0023] The active layer may be closer to the first end of the light-emitting element than the center of the light-emitting element, and wherein the first portion of the first electrode may extend entirely beneath the second semiconductor layer and the active layer of the light-emitting element.

[0024] According to a disclosed embodiment, a display device includes: a substrate; a via layer on the substrate; a first sub-dam on the via layer; a second sub-dam on the via layer and spaced apart from the first sub-dam; a first electrode on the first sub-dam; a second electrode on the second sub-dam; and a light-emitting element between the first sub-dam and the second sub-dam, wherein each of the first and second sub-dams has a first region facing both ends of the light-emitting element and having a concave curved shape in cross-section, wherein the first electrode has a first portion on the first region of the first sub-dam and a second portion extending from the first portion of the first electrode toward the light-emitting element, wherein the second electrode has a first portion on the first region of the second sub-dam and a second portion extending from the first portion of the second electrode toward the light-emitting element, wherein the second portions of the first electrode and the second portions of the second electrode are spaced apart from each other on the via layer, and wherein the width of the second portion of the first electrode is different from the width of the second portion of the second electrode.

[0025] The first electrode may be formed on the first sub-dike and via layer and along the surface shape of the first sub-dike and via layer below the first electrode, and wherein the second electrode may be formed on the second sub-dike and via layer and along the surface shape of the second sub-dike and via layer below the second electrode.

[0026] Each of the first portion of the first electrode and the first portion of the second electrode may have a concave curved shape in cross-section, and each of the second portions of the first electrode and the second portion of the second electrode may be flat.

[0027] The light-emitting element may include an active layer, wherein the active layer may be closer to a first end of the light-emitting element relative to the center of the light-emitting element, and wherein the first end of the light-emitting element may face a first region of a first sub-dike.

[0028] The second part of the first electrode can be stacked with the first end of the light-emitting element in the thickness direction of the substrate, wherein the second part of the second electrode can be stacked with the second end of the light-emitting element in the thickness direction of the substrate, and wherein the width of the second part of the first electrode can be greater than the width of the second part of the second electrode.

[0029] Details of other embodiments are included in the detailed description and accompanying drawings.

[0030] Beneficial effects

[0031] The display device according to an embodiment may include a first dike comprising a plurality of sub-dikes spaced apart from each other and having curved outer surfaces. A plurality of electrodes may be disposed on the sub-dikes. Light-emitting diodes (LEDs) may be disposed between the sub-dikes and electrically connected to the electrodes. The plurality of sub-dikes may have a first region with a concave outer surface on the side facing the LED, such that light emitted from the LED is reflected by the surfaces of the electrodes disposed on the first region of the sub-dike. Because the outer surfaces of the sub-dikes facing the LED have a concave curved shape, the amount of light emitted from the LED and directed toward the display side (or display surface) of the display device is increased, and the light-gathering efficiency is improved. As a result, the output efficiency of the display device can be improved.

[0032] The effects of the embodiments are not limited to those illustrated above, and many more different effects are included in this disclosure. Attached Figure Description

[0033] Figure 1 This is a plan view of a display device according to an embodiment of the present disclosure.

[0034] Figure 2 This is a schematic plan view illustrating the pixels of a display device according to an embodiment of the present disclosure.

[0035] Figure 3 This is a plan view illustrating the sub-pixels of a display device according to an embodiment of the present disclosure.

[0036] Figure 4 It is along Figure 3 The sectional views taken from lines Q1-Q1', Q2-Q2', and Q3-Q3'.

[0037] Figure 5 It is along Figure 3 A sectional view taken from line Q4-Q4'.

[0038] Figure 6 This is a view showing a light-emitting element according to an embodiment of the present disclosure.

[0039] Figure 7 It is shown Figure 4 An enlarged sectional view of region A.

[0040] Figure 8 yes Figure 7 An enlarged sectional view of a portion of the document.

[0041] Figure 9 This is a cross-sectional view showing the propagation path of light emitted from a light-emitting diode of a display device according to an embodiment.

[0042] Figure 10 It is shown Figure 9 An enlarged cross-sectional view of an example of region B.

[0043] Figure 11 This illustrates a different embodiment. Figure 4 An enlarged sectional view of region A.

[0044] Figures 12 to 19 This is a cross-sectional view illustrating the process steps of a method for manufacturing a display device according to an embodiment of the present disclosure.

[0045] Figure 20 According to another embodiment, along Figure 3 A cross-sectional view taken from line Q2-Q2'.

[0046] Figure 21 According to another embodiment, along Figure 3 A cross-sectional view taken from line Q2-Q2'. Detailed Implementation

[0047] This disclosure will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the disclosure are illustrated. However, this disclosure may be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0048] It will also be understood that when a layer is referred to as being "on" another layer or substrate, the layer may be directly on the other layer or substrate, or an intermediary layer may be present. Throughout the specification, the same reference numerals denote the same components.

[0049] It will be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the teachings of this disclosure, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0050] In the following description, embodiments will be illustrated with reference to the accompanying drawings.

[0051] Figure 1This is a plan view of a display device according to an embodiment of the present disclosure.

[0052] Reference Figure 1 The display device 10 is configured to display moving or still images. The display device 10 can refer to any electronic device that provides (or includes) a display screen. For example, the display device 10 may include a television, laptop computer, monitor, electronic billboard, Internet of Things (IoT) device, mobile phone, smartphone, tablet PC, electronic watch, smartwatch, watch phone, head-mounted display device, mobile communication terminal, electronic notebook, e-book reader, portable multimedia player (PMP), navigation device, game console, digital camera, and camcorder, etc.

[0053] Display device 10 includes a display panel for providing a display screen. Examples of display panels may include inorganic light-emitting diode (LED) display panels, organic light-emitting diode (OLED) display panels, quantum dot (QD) light-emitting diode (OLED) display panels, plasma display panels, field emission display panels, etc. In the following description, display device 10 is described as an inorganic LED display panel, but this disclosure is not limited thereto. Other suitable display panels may be used, provided that the technical concept of this disclosure can be equivalently applied thereto.

[0054] The accompanying drawings define a first direction DR1, a second direction DR2, and a third direction DR3. A display device 10 according to an embodiment of the present disclosure will be described with reference to the drawings. The first direction DR1 may be perpendicular to the second direction DR2 in a plane. The third direction DR3 may be perpendicular to a plane in which the first direction DR1 and the second direction DR2 are positioned. The third direction DR3 may be perpendicular to each of the first direction DR1 and the second direction DR2. In the following description of the display device 10 according to an embodiment of the present disclosure, the third direction DR3 refers to the thickness direction of the display device 10 (e.g., the display side or display direction).

[0055] When viewed from above, the display device 10 may have a rectangular shape having a longer side in the first direction DR1 and a shorter side in the second direction DR2. While the corner where the longer and shorter sides of the display device 10 intersect may form a right angle, this is merely illustrative. The display device 10 may have rounded corners. The shape of the display device 10 is not limited to the shape shown and can be modified in various ways. For example, the display device 10 may have other shapes such as a square, a rectangle with rounded corners (vertices), other polygons, and circles.

[0056] The display surface may be positioned on one side of the display device 10 in a third direction DR3 (e.g., the thickness direction). In the following description, unless otherwise specified, the upper side of the display device 10 refers to the side in the third direction DR3 on which the displayed image is located, and the upper surface of the display device 10 refers to the surface facing the third direction DR3. Additionally, the lower side refers to the opposite side in the third direction DR3, and similarly, the lower surface refers to the surface facing the direction opposite to the third direction DR3. As used herein, the terms "left side," "right side," "upper side," and "lower side" refer to relative positions when the display device 10 is viewed from above. For example, the right side refers to one side in the first direction DR1, the left side refers to the opposite side in the first direction DR1, the upper side refers to one side in the second direction DR2, and the lower side refers to the opposite side in the second direction DR2.

[0057] The display device 10 may have a display area DPA and a non-display area NDA. An image may be displayed in the display area DPA. An image may not be displayed in the non-display area NDA.

[0058] The shape of the display area DPA can follow the shape of the display device 10. For example, when viewed from above, the display area DPA can have a rectangular shape that is generally similar to the shape of the display device 10. The display area DPA can generally occupy most of the center of the display device 10.

[0059] The display area DPA may include multiple pixels PX. The multiple pixels PX may be arranged in a matrix. When viewed from above, each of the pixels PX may be rectangular or square in shape. In an embodiment, each of the pixels PX may include multiple light-emitting elements comprising inorganic particles (or made of inorganic particles).

[0060] The non-display area NDA can be disposed around the display area DPA. The non-display area NDA can completely or partially surround the display area DPA (e.g., it can extend around the periphery of the display area DPA). The non-display area NDA can form the bezel of the display device 10.

[0061] Figure 2 This is a schematic plan view illustrating the pixels of a display device according to an embodiment of the present disclosure. Figure 3 This is a plan view illustrating the sub-pixels of a display device according to an embodiment of the present disclosure.

[0062] Reference Figure 2Each pixel PX may include multiple sub-pixels SPX: SPX1, SPX2, and SPX3. For example, a pixel PX may include a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. The first sub-pixel SPX1 may emit light of a first color, the second sub-pixel SPX2 may emit light of a second color, and the third sub-pixel SPX3 may emit light of a third color. The first color may be blue, the second color may be green, and the third color may be red. However, it will be understood that this disclosure is not limited thereto. Sub-pixels SPX1, SPX2, and SPX3 may emit light of the same color. Although in Figure 2 In the example shown, a single pixel PX includes three sub-pixels SPX1, SPX2, and SPX3, but this disclosure is not limited thereto. Each pixel PX may include more than three sub-pixels SPX.

[0063] Each of the sub-pixels SPX in the display device 10 may have an emitting region EMA and a non-emitting region. Light emitted from the light-emitting diode ED can exit from the emitting region EMA. Light emitted from the light-emitting diode ED does not reach the non-emitting region and therefore no light exits from the non-emitting region.

[0064] The emitting region EMA may include the area where a light-emitting diode ED is disposed and the area adjacent to that area. The emitting region EMA may also include the area where light emitted from the light-emitting diode ED is reflected or refracted by other elements to exit (e.g., the area adjacent to the area where the light-emitting diode ED is disposed).

[0065] Each sub-pixel SPX may also include an auxiliary region SA disposed in a non-emitting region. A light-emitting diode (ED) may not be disposed in the auxiliary region SA. The auxiliary region SA may be disposed above the emitting region EMA within a sub-pixel SPX (e.g., on one side of the emitting region EMA in the second direction DR2). The auxiliary region SA may be disposed between the emitting regions EMA of adjacent sub-pixels SPX along the second direction DR2.

[0066] The auxiliary region SA may include a separation region ROP. In the separation region ROP of the auxiliary region SA, the first electrode 210 and the second electrode 220 included in the sub-pixel SPX may be separated from the first electrode 210 and the second electrode 220 included in another sub-pixel SPX adjacent to the sub-pixel SPX in the second direction DR2, respectively. Therefore, portions of the first electrode 210 and the second electrode 220 disposed in each of the sub-pixels SPX may be disposed in the auxiliary region SA.

[0067] Reference Figure 2 and Figure 3Each sub-pixel SPX of the display device 10 according to the embodiment may include a plurality of electrodes 210 and 220, a first dike 400 including a plurality of sub-dikes, a plurality of contact electrodes 710 and 720, a plurality of light-emitting diodes ED, and a second dike 600.

[0068] In the following text, refer to Figure 2 and Figure 3 The following will describe the arrangement of a plurality of electrodes 210 and 220 in a single sub-pixel SPX of a display device 10 according to an embodiment of the present disclosure, a first dike 400 including a plurality of sub-dikes, a plurality of contact electrodes 710 and 720, a plurality of light-emitting diodes ED and a second dike 600, when viewed from top.

[0069] When viewed from above, the second dike 600 can be arranged in a grid pattern across the entire surface of the display area DPA and can have portions extending in the first direction DR1 and the second direction DR2. The second dike 600 can be arranged along the boundary of each of the sub-pixels SPX to distinguish adjacent sub-pixels SPX from one another. The second dike 600 can be configured to surround the emission region EMA and auxiliary region SA within each of the sub-pixels SPX (e.g., configured to extend around the periphery of the emission region EMA and auxiliary region SA within each of the sub-pixels SPX) to differentiate them. For example, the emission region EMA and auxiliary region SA in each of the sub-pixels SPX can be defined by the second dike 600.

[0070] A first dike 400 may be disposed within a transmission region EMA. The first dike 400 may have a shape extending in a second direction DR2 within the transmission region EMA. The first dike 400 may extend in the second direction DR2 and may be spaced apart from a second dike 600 surrounding the transmission region EMA. For example, the length of the first dike 400 in the second direction DR2 may be less than the length of the transmission region EMA surrounded by the second dike 600 in the second direction DR2.

[0071] The first dike 400 may include a plurality of sub-dikes 410 and 420 arranged facing each other in the emission region EMA. Because the plurality of sub-dikes 410 and 420 are spaced apart from each other, they can provide space between them in which light-emitting diodes (LEDs) are disposed (e.g., the LEDs may be disposed in the region between the plurality of sub-dikes 410 and 420). Additionally, as will be described in more detail later, each of the plurality of sub-dikes 410 and 420 has an outer surface facing the LED and has a concave, curved shape, such that it also serves as a reflective partition that changes the direction of light traveled from the LED towards the display side.

[0072] The first dike 400 may include a first sub-dike 410 and a second sub-dike 420. The first sub-dike 410 and the second sub-dike 420 may be spaced apart from each other and face each other in a first direction DR1. For example, when viewed from above, the first sub-dike 410 may be located on the left side of the emission area EMA, and the second sub-dike 420 may be located on the right side of the emission area EMA.

[0073] Although the first dike 400 included in a sub-pixel SPX includes two sub-dikes (e.g., first sub-dike 410 and second sub-dike 420) in the illustrated embodiment, the number of sub-dikes included in a sub-pixel SPX is not limited thereto. For example, the first dike 400 included in a sub-pixel SPX may include more than two sub-dikes depending on the number of electrodes 210 and 220.

[0074] Electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. The first electrode 210 and the second electrode 220 may be spaced apart from each other and face each other in a first direction DR1.

[0075] The first electrode 210 may be disposed on the first sub-pixel 410. When viewed from above, the first electrode 210 may be disposed on the left side of each of the sub-pixels SPX. When viewed from above, the first electrode 210 may have a shape extending in the second direction DR2. The first electrode 210 may be configured such that it passes through the emission region EMA. The first electrode 210 may be separated from the first electrode 210 of another sub-pixel SPX adjacent to it in the second direction DR2 at the separation region ROP of the auxiliary region SA.

[0076] The second electrode 220 can be disposed on the second sub-pixel 420. The second electrode 220 can be spaced apart from the first electrode 210 in the first direction DR1. The second electrode 220 can be spaced apart from the first electrode 210 in the first direction DR1 and face the first electrode 210. When viewed from above, the second electrode 220 can be disposed on the right side of each of the sub-pixels SPX. When viewed from above, the second electrode 220 can have a shape extending in the second direction DR2. The second electrode 220 can be configured to pass through the emission region EMA. The second electrode 220 can be separated from the second electrode 220 of another sub-pixel SPX adjacent to it in the second direction DR2 at the separation region ROP of the auxiliary region SA.

[0077] In some embodiments, the first electrode 210 and the second electrode 220 may be configured to have widths greater than those of the first sub-dike 410 and the second sub-dike 420, respectively. For example, the width of the first electrode 210 in the first direction DR1 may be greater than the width of the first sub-dike 410 in the first direction DR1, and the width of the second electrode 220 in the first direction DR1 may be greater than the width of the second sub-dike 420 in the first direction DR1. Therefore, when viewed from above, the distance between the first electrode 210 and the second electrode 220 in the first direction DR1 may be less than the distance between the first sub-dike 410 and the second sub-dike 420 in the first direction DR1.

[0078] The first electrode 210 and the second electrode 220 can be configured to cover the outer surfaces of the first sub-dike 410 and the second sub-dike 420, respectively.

[0079] The first electrode 210 may cover the first sub-dike 410 to extend outward from the first sub-dike 410, and may be configured such that a side surface of the first electrode 210 facing the second electrode 220 (e.g., the right side of the first electrode 210 when viewed from above) is positioned between the first sub-dike 410 and the second sub-dike 420. Similarly, the second electrode 220 may cover the outer surface of the second sub-dike 420 to extend outward from the second sub-dike 420, and may be configured such that a side surface of the second electrode 220 facing the first electrode 210 (e.g., the left side of the second electrode 220 when viewed from above) is positioned between the first sub-dike 410 and the second sub-dike 420.

[0080] The width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 into the region between the first sub-dike 410 and the second sub-dike 420 can be equal to a first horizontal distance d1 between the right side of the first electrode 210 and the right side of the first sub-dike 410. The right side of the first electrode 210 can be the side of the first electrode 210 facing the second electrode 220. The right side of the first sub-dike 410 can be the side of the first sub-dike 410 facing the second sub-dike 420 or the side of the first sub-dike 410 facing the first end of the light-emitting diode ED, which will be described later.

[0081] Similarly, the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420 can be equal to the second horizontal distance d2 between the left side of the second electrode 220 and the left side of the second sub-dike 420. The left side of the second electrode 220 can be the side of the second electrode 220 facing the first electrode 210. The left side of the second sub-dike 420 can be the side of the second sub-dike 420 facing the first sub-dike 410 or the side of the second sub-dike 420 facing the second end of the light-emitting diode ED, which will be described later, and the second end of the light-emitting diode ED is the opposite end of the first end.

[0082] The first horizontal distance d1 between the right side of the first electrode 210 and the right side of the first sub-dike 410 may be different from the second horizontal distance d2 between the left side of the second electrode 220 and the left side of the second sub-dike 420. For example, the width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 into the region between the first sub-dike 410 and the second sub-dike 420 may be different from the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420. For example, the first horizontal distance d1 between the right side of the first electrode 210 and the right side of the first sub-dike 410 may be greater than the second horizontal distance d2 between the left side of the second electrode 220 and the left side of the second sub-dike 420. When the width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 to the region between the first sub-dike 410 and the second sub-dike 420 is different from the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 to the region between the first sub-dike 410 and the second sub-dike 420, the width of the portion of the first electrode 210 superimposed on the light-emitting diode ED may be different from the width of the portion of the second electrode 220 superimposed on the light-emitting diode ED, which will be described in more detail later.

[0083] The structure of the display device 10 as viewed from above is shown. Figure 2 and Figure 3 In the diagram, the first horizontal distance d1 when viewed from above is defined as "the horizontal distance d1 between the right side of the first electrode 210 and the right side of the first sub-dike 410" or as "the width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 into the region between the first sub-dike 410 and the second sub-dike 420". A cross-sectional structure of the display device 10 is shown and will be described later. Figure 7 In the same reference numeral "d1", it can be defined as "the width d1 of the portion of the first electrode 210 protruding from the first sub-dike 410 into the region between the first sub-dike 410 and the second sub-dike 420" in cross-section. Similarly, the second horizontal distance d2 when viewed from the top is defined as "the horizontal distance d2 between the left side of the second electrode 220 and the left side of the second sub-dike 420" or as "the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420". The cross-sectional structure of the display device 10 is shown and will be described later. Figure 7 In the figure, the same reference numeral "d2" can be defined as "the width d2 of the portion of the second electrode 220 protruding from the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420" in the cross section.

[0084] Light-emitting diodes (LEDs) can be disposed between the first sub-dike 410 and the second sub-dike 420. Multiple LEDs can have a shape extending in one direction and can be configured between the first sub-dike 410 and the second sub-dike 420 such that their two ends (e.g., opposite ends) face the first sub-dike 410 and the second sub-dike 420 respectively when viewed from above. For example, the multiple LEDs can be configured such that the first end of the LED faces one side of the first sub-dike 410 (e.g., the right side of the first sub-dike 410 when viewed from above), and the second end of the LED faces one side of the second sub-dike 420 (e.g., the left side of the second sub-dike 420 when viewed from above).

[0085] The light-emitting diode ED can be generally positioned at the center between the first sub-bank 410 and the second sub-bank 420 (e.g., substantially equidistant between the first sub-bank 410 and the second sub-bank 420). For example, a third horizontal distance d3 between the first sub-bank 410 and the light-emitting diode ED (see example...) Figure 7 This can be equal to or substantially equal to the fourth horizontal distance d4 between the second sub-dike 420 and the light-emitting diode ED (see example). Figure 7 The third horizontal distance d3 between the first sub-bank 410 and the light-emitting diode ED can be measured as the horizontal distance d3 between the right side of the first sub-bank 410 and the first end of the light-emitting diode ED. The fourth horizontal distance d4 between the second sub-bank 420 and the light-emitting diode ED can be measured as the horizontal distance d4 between the left side of the second sub-bank 420 and the second end of the light-emitting diode ED. However, it will be understood that this disclosure is not limited thereto. Some of the plurality of light-emitting diodes ED can be positioned closer to one of the sub-banks 410 and 420 between the first sub-bank 410 and the second sub-bank 420.

[0086] Multiple light-emitting diodes (LEDs) can be configured between the first sub-dike 410 and the second sub-dike 420 such that the two ends of the LEDs are respectively placed on the first electrode 210 and the second electrode 220. For example, the multiple LEDs can be configured such that the first end of the LED is on the first electrode 210, while the second end of the LED is on the second electrode 220.

[0087] The first electrode 210 may be at least partially superimposed on the first end of the light-emitting diode ED on the third-direction DR3. The width w1 of the region where the first electrode 210 is superimposed on the first end of the light-emitting diode ED on the third-direction DR3 may be equal to the fifth horizontal distance w1 between the right side of the first electrode 210 and the first end of the light-emitting diode ED.

[0088] The second electrode 220 may be at least partially superimposed on the second end of the light-emitting diode ED on the third-direction DR3. The width w2 of the region where the second electrode 220 is superimposed on the second end of the light-emitting diode ED on the third-direction DR3 may be equal to the sixth horizontal distance w2 between the left side of the second electrode 220 and the second end of the light-emitting diode ED.

[0089] The widths w1 and w2 of the two ends of the light-emitting diode ED in the regions on the third-direction DR3 where it overlaps with the first electrode 210 and the second electrode 220, respectively, can be different from each other. For example, the light-emitting diode ED is disposed at the center between the first sub-dike 410 and the second sub-dike 420, which are spaced apart from each other. When the width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 to the region between the first sub-dike 410 and the second sub-dike 420 is different from the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 to the region between the first sub-dike 410 and the second sub-dike 420, the widths w1 and w2 of the two ends of the light-emitting diode ED in the regions on the third-direction DR3 where it overlaps with the first electrode 210 and the second electrode 220, respectively, can be different from each other. For example, the width w1 of the first end of the light-emitting diode ED in the region on the third-direction DR3 where it overlaps with the first electrode 210 can be different from the width w2 of the second end of the light-emitting diode ED in the region on the third-direction DR3 where it overlaps with the second electrode 220. For example, the width w1 of the first end of the light-emitting diode ED in the region where it overlaps with the first electrode 210 on the third-direction DR3 can be greater than the width w2 of the second end of the light-emitting diode ED in the region where it overlaps with the second electrode 220 on the third-direction DR3.

[0090] When the width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 to the region between the first sub-dike 410 and the second sub-dike 420 is different from the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 to the region between the first sub-dike 410 and the second sub-dike 420, the arrangement of the first electrode 210, the second electrode 220 and the light-emitting diode ED can be controlled such that the widths w1 and w2 of the two ends of the light-emitting diode ED at the regions on the third-direction DR3 where they overlap with the first electrode 210 and the second electrode 220 are different from each other.

[0091] Contact electrodes 710 and 720 may include a first contact electrode 710 and a second contact electrode 720. The first contact electrode 710 and the second contact electrode 720 may be spaced apart from each other.

[0092] A first contact electrode 710 may be disposed on the first electrode 210. The first contact electrode 710 may have a shape extending in the second direction DR2. The first contact electrode 710 may contact the first electrode 210 and the first terminal of the light-emitting diode ED. The first contact electrode 710 may contact the first electrode 210 in the area exposed by the first opening OP1 in the auxiliary region SA, and may contact the first terminal of the light-emitting diode ED in the emission region EMA. The first contact electrode 710 may electrically connect the first terminal of the light-emitting diode ED to the first electrode 210.

[0093] The second contact electrode 720 can be disposed on the second electrode 220. The second contact electrode 720 can have a shape extending in the second direction DR2. The second contact electrode 720 can contact the second electrode 220 and the second terminal of the light-emitting diode ED. The second contact electrode 720 can contact the second electrode 220 in the area exposed by the second opening OP2 in the auxiliary region SA, and can contact the second terminal of the light-emitting diode ED in the emission region EMA. The second contact electrode 720 can electrically connect the second terminal of the light-emitting diode ED to the second electrode 220.

[0094] Figure 4 It is along Figure 3 The sectional views taken from lines Q1-Q1', Q2-Q2', and Q3-Q3'. Figure 5 It is along Figure 3 A sectional view taken from line Q4-Q4'.

[0095] Reference Figure 4 The display device 10 may include a substrate SUB, a circuit element layer CCL disposed on the substrate SUB, and a display element layer disposed on the circuit element layer CCL. The display element layer may include a plurality of electrodes 210 and 220, a first dike 400 including a plurality of sub-dikes, a plurality of contact electrodes 710 and 720, a plurality of light-emitting diodes ED, a second dike 600, and a plurality of insulating layers.

[0096] The substrate SUB can be an insulating substrate. The substrate SUB can include insulating materials such as glass, quartz, and polymer resins (or can be made of insulating materials such as glass, quartz, and polymer resins). The substrate SUB can be a rigid substrate or a flexible substrate that can be bent, folded, or rolled up.

[0097] The circuit element layer CCL can be disposed on the substrate SUB. The circuit element layer CCL may include multiple conductive layers, at least one transistor TR, multiple insulating layers, and a first voltage line VL1 and a second voltage line VL2.

[0098] The bottom metal layer 110 may be disposed on the substrate SUB. The bottom metal layer 110 may be a light-shielding layer of the active layer ACT that protects the transistor TR. The bottom metal layer 110 may include a material that blocks (or substantially blocks) light. For example, the bottom metal layer 110 may include an opaque metallic material that blocks light transmission (or may be made of an opaque metallic material that blocks light transmission).

[0099] The bottom metal layer 110 may be disposed at least below the channel region of the active layer ACT of the transistor TR and may at least cover the channel region of the active layer ACT of the transistor TR, and in some embodiments, may cover the entire active layer ACT of the transistor TR. However, it will be understood that this disclosure is not limited thereto. The bottom metal layer 110 may be omitted.

[0100] A buffer layer 161 may be disposed above the bottom metal layer 110. The buffer layer 161 may be configured to cover the entire surface of the substrate SUB on which the bottom metal layer 110 is disposed. The buffer layer 161 can protect multiple transistors from moisture that may permeate through the substrate SUB, which may be susceptible to moisture penetration.

[0101] A semiconductor layer is disposed on the buffer layer 161. The semiconductor layer may include the active layer ACT of the transistor TR. The active layer ACT of the transistor TR may be configured to be stacked with the bottom metal layer 110 as described above.

[0102] The semiconductor layer may include polycrystalline silicon, monocrystalline silicon, oxide semiconductors, etc. According to embodiments of this disclosure, when the semiconductor layer includes polycrystalline silicon, polycrystalline silicon can be formed by crystallizing amorphous silicon. When the semiconductor layer includes polycrystalline silicon, the active layer ACT of the transistor TR may include multiple doped regions doped with impurities and a channel region between them. In another embodiment, the semiconductor layer may include an oxide semiconductor. For example, the oxide semiconductor may be indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), indium gallium zinc tin oxide (IGZTO), etc.

[0103] Gate insulator 162 may be disposed on a semiconductor layer. Gate insulator 162 may serve as the gate insulating layer for each transistor. Gate insulator 162 may include an inorganic material (e.g., silicon oxide (SiO2)). x ), silicon nitride (SiN) x ) and silicon oxynitride (SiO) x N y A plurality of layers consisting of at least one of the following inorganic layers stacked alternately on top of each other (or may consist of layers containing inorganic materials (e.g., silicon oxide (SiO2)). x ), silicon nitride (SiN)x ) and silicon oxynitride (SiO) x N y It consists of multiple layers of inorganic layers that are stacked alternately on top of each other (at least one of the following).

[0104] A first conductive layer may be disposed on the gate insulator 162. The first conductive layer may include the gate electrode GE of the transistor TR. The gate electrode GE of the transistor TR may be configured such that it is superimposed on the channel region of the active layer ACT of the transistor TR in the thickness direction (e.g., the third direction DR3).

[0105] The first interlayer dielectric layer 163 can be disposed on the first conductive layer. The first interlayer dielectric layer 163 can cover the gate electrode GE of the transistor TR. The first interlayer dielectric layer 163 can serve as an insulating layer between the first conductive layer and other layers disposed thereon, and can protect the first conductive layer.

[0106] The second conductive layer may be disposed on the first interlayer dielectric layer 163. The second conductive layer may include the source electrode SD1 and the drain electrode SD2 of the transistor TR. The second conductive layer may also include data lines.

[0107] The source electrode SD1 and drain electrode SD2 of transistor TR can be electrically connected to the two end regions of the active layer ACT of transistor TR respectively through contact openings (e.g., contact holes) penetrating the first interlayer dielectric layer 163 and the gate insulator 162. In addition, the source electrode SD1 can be electrically connected to the bottom metal layer 110 through another contact opening (e.g., another contact hole) penetrating the first interlayer dielectric layer 163, the gate insulator 162 and the buffer layer 161.

[0108] The second interlayer dielectric layer 164 can be disposed on the second conductive layer. The second interlayer dielectric layer 164 can serve as an insulating layer between the second conductive layer and other layers disposed thereon, and can protect the second conductive layer.

[0109] The third conductive layer may be disposed on the second interlayer dielectric layer 164. The third conductive layer may include a first voltage line VL1, a second voltage line VL2, and a first conductive pattern CDP.

[0110] A high-level voltage (e.g., a first power supply voltage) can be applied to the first voltage line VL1 to supply transistor TR, and a low-level voltage (e.g., a second power supply voltage) lower than the high-level voltage supplied to the first voltage line VL1 can be applied to the second voltage line VL2.

[0111] The first voltage line VL1 can be electrically connected to the drain electrode SD2 of the transistor TR through a contact opening (e.g., a contact hole) penetrating the second interlayer dielectric layer 164.

[0112] The second voltage line VL2 can be electrically connected to the second electrode 220 by penetrating the second electrode contact opening (e.g., the second electrode contact hole) CT2 of the via layer 165, which will be described later. A second power supply voltage applied to the second voltage line VL2 can be supplied to the second electrode 220. An alignment signal for aligning the light-emitting diode ED during the manufacturing process of the display device 10 can be applied to the second voltage line VL2.

[0113] The first conductive pattern CDP can be electrically connected to the transistor TR. The first conductive pattern CDP can be electrically connected to the source electrode SD1 of the transistor TR through a contact opening (e.g., a contact hole) penetrating the second interlayer dielectric layer 164. Alternatively, the first conductive pattern CDP can be electrically connected to the first electrode 210 through a first electrode contact opening (e.g., a first electrode contact hole) CT1 penetrating the via layer 165. The transistor TR can transmit the first power supply voltage applied from the first voltage line VL1 to the first electrode 210 via the first conductive pattern CDP.

[0114] Via layer 165 may be disposed on the third conductive layer. Via layer 165 may also be disposed on the second interlayer dielectric layer 164 on which the third conductive layer is disposed. Via layer 165 may comprise an organic insulating material, such as an organic material like polyimide (PI). Via layer 165 may provide a flat surface.

[0115] The buffer layer 161, gate insulator 162, first interlayer dielectric layer 163, and second interlayer dielectric layer 164 may comprise a plurality of inorganic layers stacked alternately on top of each other (or may be composed of a plurality of inorganic layers stacked alternately on top of each other). For example, the buffer layer 161, gate insulator 162, first interlayer dielectric layer 163, and second interlayer dielectric layer 164 may comprise silicon oxide (SiO2). x ), silicon nitride (SiN) x A bilayer consisting of at least one of silicon oxynitride (SiON) and an inorganic layer stacked on top of each other (or may consist of a layer containing silicon oxide (SiO)). x ), silicon nitride (SiN) x A bilayer structure consisting of at least one of silicon oxynitride (SiON) and an inorganic layer stacked on top of each other, or may include silicon oxide (SiO) x ), silicon nitride (SiN) x Multiple layers of inorganic layers stacked on top of each other, including at least one of silicon oxynitride (SiON) and silicon oxynitride (SiO2) (or may consist of layers containing silicon oxynitride (SiO2)). x ), silicon nitride (SiN) x(This is a plurality of layers consisting of at least one inorganic layer selected from silicon oxynitride (SiON) stacked on top of each other). However, it will be understood that this disclosure is not limited thereto. Buffer layer 161, gate insulator 162, first interlayer dielectric layer 163, and second interlayer dielectric layer 164 may comprise a single inorganic layer containing the aforementioned insulating material (or may be composed of a single inorganic layer containing the aforementioned insulating material).

[0116] The first, second, and third conductive layers may comprise one or more layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof (or may consist of one or more layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof). However, it will be understood that this disclosure is not limited thereto.

[0117] The display element layer can be disposed on the via layer 165. Referring to the following text... Figures 3 to 5 Describe the structure of the display element layer set on the circuit element layer CCL.

[0118] The first dam 400 may be disposed on the via layer 165 in the emission region EMA. The first dam 400 may have a shape that protrudes in the thickness direction (e.g., third direction DR3) of the substrate SUB relative to one surface of the via layer 165.

[0119] Each of the first sub-dike 410 and the second sub-dike 420 may be disposed on a surface of the via layer 165. Each of the first sub-dike 410 and the second sub-dike 420 may have a shape that protrudes relative to the surface of the via layer 165 in the thickness direction of the substrate SUB.

[0120] According to embodiments of this disclosure, each of the first sub-dike 410 and the second sub-dike 420 may have a shape protruding from the via layer 165 and may have at least a partially concave curved shape. As used herein, the expression "concave curved shape" may refer to a shape in which the outer surface of an element is recessed and curved toward the inside of the element in cross-section, or a shape in which the slope of the tangent on the outer surface of the element increases along a third direction DR3. Conversely, the expression "convex curved shape" may refer to a shape in which the outer surface of an element protrudes and curves toward the outside of the element in cross-section, or a shape in which the slope of the tangent on the outer surface of the element decreases along a third direction DR3.

[0121] The first sub-dike 410 may have a first region 410A and a second region 410B, which are distinguished by their arrangement with the ends of the light-emitting diode ED and their cross-sectional shapes.

[0122] The first region 410A of the first sub-dam 410 may face the first end of the light-emitting diode ED and may have a concave, curved shape in cross-section. The first region 410A of the first sub-dam 410 may be positioned on the side facing the first end of the light-emitting diode ED (e.g., the right side in the figure). Therefore, the first region 410A of the first sub-dam 410 may be positioned on the side facing the second sub-dam 420. The first region 410A of the first sub-dam 410 may have an inwardly concave and curved shape in cross-section of the first sub-dam 410.

[0123] The second region 410B of the first sub-dike 410 can be located on the opposite side of the side facing the first end of the light-emitting diode ED, and can have a convex curved shape. The second region 410B of the first sub-dike 410 can be located on the opposite side of the side facing the first end of the light-emitting diode ED (e.g., the left side in the figures). The second region 410B of the first sub-dike 410 can face the second dike 600. The second region 410B of the first sub-dike 410 can have a shape that protrudes outwardly and is curved in the cross-section of the first sub-dike 410. Although the second region 410B of the first sub-dike 410 has a convex curved shape in the cross-section in the figures, this disclosure is not limited thereto. For example, the second region 410B of the first sub-dike 410 can have at least partially inclined side surfaces, or can have at least partially concave curved shapes in the cross-section, similar to the first region 410A of the first sub-dike 410.

[0124] The second sub-dike 420 may have a first region 420A and a second region 420B, which are distinguished by their arrangement with the ends of the light-emitting diode ED and their cross-sectional shapes.

[0125] The first region 420A of the second sub-dike 420 may face the second end of the light-emitting diode ED and may have a concave, curved shape in cross-section. The first region 420A of the second sub-dike 420 may be positioned on the side facing the second end of the light-emitting diode ED (e.g., the left side in the figure). Therefore, the first region 420A of the second sub-dike 420 may be positioned on the side facing the first sub-dike 410 and may face the first region 410A of the first sub-dike 410. The first region 420A of the second sub-dike 420 may have an inwardly concave and curved shape in cross-section of the second sub-dike 420.

[0126] The second region 420B of the second sub-dam 420 can be located on the opposite side of the side facing the second end of the light-emitting diode ED, and can have a convex curved shape. The second region 420B of the second sub-dam 420 can be located on the opposite side of the side facing the second end of the light-emitting diode ED (e.g., the right side in the figures). The second region 420B of the second sub-dam 420 can have a shape that protrudes outwardly and is curved in the cross-section of the second sub-dam 420. Although the second region 420B of the second sub-dam 420 has a convex curved shape in the cross-section in the figures, this disclosure is not limited thereto. For example, the second region 420B of the second sub-dam 420 can have at least partially inclined side surfaces, or can have at least partially concave curved shapes in the cross-section, similar to the first region 420A of the second sub-dam 420.

[0127] According to embodiments of this disclosure, the first dike 400 may include, but is not limited to, organic insulating materials such as polyimide (PI).

[0128] The first electrode 210 and the second electrode 220 can be disposed on the first dam 400 and the via layer 165 exposed by the first dam 400. The first electrode 210 and the second electrode 220 can be electrically connected to the circuit element layer CCL disposed below them.

[0129] The first electrode 210 can be connected to the first conductive pattern CDP through the first electrode contact opening CT1 penetrating the via layer 165. For example, the first electrode 210 can contact the first conductive pattern CDP through the first electrode contact opening CT1 penetrating the via layer 165. The first electrode contact opening CT1 can be superimposed on the second dam 600 on the third-direction DR3, but the position of the first electrode contact opening CT1 is not limited to this.

[0130] The second electrode 220 can be connected to the second voltage line VL2 through the second electrode contact opening CT2 penetrating the via layer 165. For example, the second electrode 220 can contact the second voltage line VL2 through the second electrode contact opening CT2 penetrating the via layer 165. The second electrode contact opening CT2 can be spaced apart from the first electrode contact opening CT1 and can be superimposed on the second dam 600 on the third-direction DR3, but the position of the second electrode contact opening CT2 is not limited to this.

[0131] The first electrode 210 can be electrically connected to the transistor TR via the first conductive pattern CDP to receive a first power supply voltage. The second electrode 220 can be electrically connected to the second voltage line VL2 to receive a second power supply voltage. Because the first electrode 210 and the second electrode 220 are respectively disposed in each of the sub-pixels SPX, the light-emitting diodes ED of different sub-pixels SPX can emit light individually.

[0132] The first electrode 210 may be disposed on the first sub-dike 410. The first electrode 210 may be disposed on the first sub-dike 410 to cover the outer surface of the first sub-dike 410. The first electrode 210 may extend outward from the first sub-dike 410 and may be partially disposed between the first sub-dike 410 and the second sub-dike 420 on the surface of the via layer 165 exposed by the first sub-dike 410 and the second sub-dike 420 (e.g., beyond the periphery of the first sub-dike 410 and the second sub-dike 420).

[0133] The first electrode 210 can be disposed on the first sub-dike 410 and the via layer 165. The first electrode 210 can be disposed on the first sub-dike 410 and the via layer 165, and is formed along the surface shape of the first sub-dike 410 and the via layer 165 disposed below it. Therefore, the cross-sectional shape of the surface of the first electrode 210 disposed on the first sub-dike 410 can have a shape consistent with the shape of the outer surface (or surface) of the first sub-dike 410. Additionally, the cross-sectional shape of the surface of the first electrode 210 disposed on the via layer 165 can have a shape consistent with the shape of the surface of the via layer 165. For example, the cross-sectional shape of the surface of the first electrode 210 disposed on the first sub-dike 410 can have a concave curved shape where it overlaps with the first region 410A of the first sub-dike 410 along the third direction DR3, and a convex curved shape where it overlaps with the second region 410B of the first sub-dike 410 along the third direction DR3. Furthermore, the cross-sectional shape of the surface of the first electrode 210 disposed on the via layer 165 may be flat at the point where it overlaps with the via layer 165 along the third direction DR3.

[0134] The second electrode 220 may be disposed on the second sub-dike 420. The second electrode 220 may be disposed on the second sub-dike 420 to cover the outer surface of the second sub-dike 420. The second electrode 220 may extend outward from the second sub-dike 420 and may be partially disposed between the first sub-dike 410 and the second sub-dike 420 on the surface of the via layer 165 exposed by the first sub-dike 410 and the second sub-dike 420 (e.g., beyond the periphery of the first sub-dike 410 and the second sub-dike 420). The first electrode 210 and the second electrode 220 disposed between the first sub-dike 410 and the second sub-dike 420 may be spaced apart from each other on the via layer 165.

[0135] The second electrode 220 can be disposed on the second sub-dike 420 and the via layer 165. The second electrode 220 can be disposed on the second sub-dike 420 and the via layer 165, and formed along the surface shape of the second sub-dike 420 and the via layer 165. Therefore, the cross-sectional shape of the surface of the second electrode 220 disposed on the second sub-dike 420 can have a shape consistent with the shape of the outer surface (or surface) of the second sub-dike 420. Additionally, the cross-sectional shape of the surface of the second electrode 220 disposed on the via layer 165 can have a shape consistent with the shape of the surface of the via layer 165. For example, the cross-sectional shape of the surface of the second electrode 220 disposed on the second sub-dike 420 can have a concave curved shape at its overlap with the first region 420A of the second sub-dike 420 along the third direction DR3, and a convex curved shape at its overlap with the second region 420B of the second sub-dike 420 along the third direction DR3. In addition, the cross-sectional shape of the surface of the second electrode 220 disposed on the via layer 165 can be flat at the point where it overlaps with the via layer 165 along the third direction DR3.

[0136] Each of the first electrode 210 and the second electrode 220 can be electrically connected to the light-emitting diode ED. The first electrode 210 and the second electrode 220 can be connected to the two ends of the light-emitting diode ED via contact electrodes 710 and 720, respectively, and can transmit electrical signals applied from the circuit element layer CCL to the light-emitting diode ED.

[0137] Each of the first electrode 210 and the second electrode 220 may include a conductive material with high reflectivity (e.g., a highly reflective conductive material). For example, the first electrode 210 and the second electrode 220 may include metals (such as silver (Ag), copper (Cu), and aluminum (Al)) as highly reflective materials, or may include alloys containing silver (Ag), aluminum (Al), nickel (Ni), lanthanum (La), etc. The first electrode 210 and the second electrode 220 may reflect light emitted by the light-emitting diode ED and traveling (or propagating) toward the outer surface of the first dam 400 at their respective surfaces, the light then reflecting toward the upper side of each of the sub-pixels SPX. The direction of travel of the light emitted by the light-emitting diode ED will be described in more detail later.

[0138] However, it will be understood that this disclosure is not limited thereto. Each of the first electrode 210 and the second electrode 220 may also include a transparent conductive material. For example, the first electrode 210 and the second electrode 220 may include materials such as ITO, IZO, and ITZO. In some embodiments, the first electrode 210 and the second electrode 220 may have a structure in which one or more layers of transparent conductive material and a metal layer with high reflectivity are stacked, or may include a single layer containing them (or may be composed of a single layer containing them). For example, each of the first electrode 210 and the second electrode 220 may have a stacked structure such as ITO / Ag / ITO, ITO / Ag / IZO, and ITO / Ag / ITZO / IZO.

[0139] A first insulating layer 510 may be disposed on the first electrode 210 and the second electrode 220. The first insulating layer 510 may be disposed on the first electrode 210 and the second electrode 220 to cover them. The first insulating layer 510 can protect the first electrode 210 and the second electrode 220 and insulate them from each other. Furthermore, the first insulating layer 510 can prevent or substantially prevent the light-emitting diode ED disposed thereon from contacting and being damaged by other components.

[0140] The first insulating layer 510 may be disposed on the first electrode 210 and the second electrode 220, and may have a first opening OP1 and a second opening OP2. The first opening OP1 penetrates the first insulating layer 510 in the auxiliary region SA to expose at least a portion of the first electrode 210, and the second opening OP2 penetrates the first insulating layer 510 in the auxiliary region SA to expose at least a portion of the second electrode 220.

[0141] The first opening OP1 exposes a portion of the upper surface of the first electrode 210 in the auxiliary region SA, and the second opening OP2 exposes a portion of the upper surface of the second electrode 220 in the auxiliary region SA. The first electrode 210 and the second electrode 220 can be electrically connected in the auxiliary region SA to the first contact electrode 710 and the second contact electrode 720, which will be described later, respectively, through the first opening OP1 and the second opening OP2.

[0142] The second dike 600 can be disposed on the first insulating layer 510. When viewed from the top, the second dike 600 can be disposed in a grid pattern having portions extending in the first direction DR1 and the second direction DR2.

[0143] As described above, the second dike 600 can be positioned across the boundary of the sub-pixel SPX to distinguish adjacent sub-pixels SPX and to separate the emitting region EMA from the auxiliary region SA. Furthermore, the second dike 600 has a greater height than the first dike 400 to further distinguish the regions. Therefore, in the manufacturing process of the display device 10, during the inkjet printing process for depositing light-emitting diodes ED, it is possible to prevent or substantially prevent ink from mixing into adjacent sub-pixels SPX, where multiple light-emitting diodes ED are dispersed, thus allowing ink to be jetted (e.g., printed or deposited) into the emitting region EMA.

[0144] The light-emitting diodes ED can be disposed on the first insulating layer 510. The light-emitting diodes ED can be spaced apart from each other along the second direction DR2 along which the first electrode 210 and the second electrode 220 extend, and can be aligned substantially parallel to each other.

[0145] A light-emitting diode (LED) can be disposed between the first sub-bank 410 and the second sub-bank 420. A first end of the LED can be spaced apart from and facing the first region 410A of the first sub-bank 410, and a second end of the LED can be spaced apart from and facing the first region 420A of the second sub-bank 420. For example, the outer surfaces of the first and second sub-banks 410 and 420, respectively, which are spaced apart from and facing the two ends of the LED, can have a concave curved shape.

[0146] A light-emitting diode (LED) can be disposed on a first insulating layer 510, with its two ends respectively placed on a first electrode 210 and a second electrode 220. The first electrode 210 and the second electrode 220 can be at least partially stacked on a third-direction DR3 with respect to both ends of the LED. The first electrode 210 can be stacked on the third-direction DR3 with respect to the first end of the LED, and the second electrode 220 can be stacked on the third-direction DR3 with respect to the second end of the LED. At least one of the first electrode 210 and the second electrode 220 can be disposed below the LED to cover the active layer 33 of the LED (see example...). Figure 6 ).

[0147] A light-emitting diode (ED) may include semiconductor layers doped with different conductivity types. The ED may include multiple semiconductor layers and may be aligned such that its first end points to a specific orientation according to the direction of the electric field generated between (or over) the first electrode 210 and the second electrode 220. Additionally, the ED may include an active layer 33 to emit light within a specific wavelength range.

[0148] The second insulating layer 520 may be partially disposed on the light-emitting diode ED. The second insulating layer 520 may be configured to partially surround the outer surface of the light-emitting diode ED (e.g., extend around the outer surface of the light-emitting diode ED), such that the two ends of the light-emitting diode ED are not covered (or are exposed). When viewed from above, the portion of the second insulating layer 520 disposed on the light-emitting diode ED may extend along a first direction DR1 on the first insulating layer 510, thereby forming a linear pattern or an island pattern in each of the sub-pixels SPX. The second insulating layer 520 can protect the light-emitting diode ED and can also fix the light-emitting diode ED during the manufacturing process of the display device 10.

[0149] The material forming the second insulating layer 520 can be disposed between the first electrode 210 and the second electrode 220, and the recessed empty space between the first insulating layer 510 and the light-emitting diode ED can be filled with the material of the second insulating layer 520.

[0150] The first contact electrode 710 may be disposed on the second insulating layer 520. The first contact electrode 710 may be disposed on the first electrode 210. The first contact electrode 710 may contact the first end of the light-emitting diode ED exposed by the second insulating layer 520 and the first electrode 210. The first contact electrode 710 may contact the first electrode 210 exposed by the first opening OP1 formed by the sidewall of the first insulating layer 510 in the auxiliary region SA, and may contact the first end of the light-emitting diode ED exposed by the second insulating layer 520 in the emission region EMA. The first contact electrode 710 may electrically connect the first end of the light-emitting diode ED to the first electrode 210.

[0151] A third insulating layer 530 may be disposed on the first contact electrode 710. The third insulating layer 530 may be configured to completely cover the first contact electrode 710 and may be configured to expose the second end of the light-emitting diode ED such that the light-emitting diode ED, together with the second insulating layer 520, contacts the second contact electrode 720. The third insulating layer 530 provides electrical insulation between the first contact electrode 710 and the second contact electrode 720. Additionally, the third insulating layer 530 may, together with the first insulating layer 510, form a second opening OP2 in the auxiliary region SA to expose the second electrode 220.

[0152] The second contact electrode 720 can be disposed on the third insulating layer 530. The second contact electrode 720 can also be disposed on the second electrode 220. The second contact electrode 720 can contact the second end of the light-emitting diode ED exposed by the second insulating layer 520, the third insulating layer 530, and the second electrode 220. The second contact electrode 720 can contact the second electrode 220 exposed by the second opening OP2 formed using the sidewalls of the first insulating layer 510 and the third insulating layer 530 in the auxiliary region SA, and can contact the second end of the light-emitting diode ED exposed by the second insulating layer 520 and the third insulating layer 530 in the emission region EMA. The second contact electrode 720 can electrically connect the second end of the light-emitting diode ED to the second electrode 220.

[0153] The first contact electrode 710 and the second contact electrode 720 may include conductive materials. For example, the first contact electrode 710 and the second contact electrode 720 may include ITO, IZO, ITZO, aluminum (Al), etc. For example, the first contact electrode 710 and the second contact electrode 720 may include transparent conductive materials. Because the first contact electrode 710 and the second contact electrode 720 include transparent conductive materials, light emitted from both ends of the light-emitting diode ED can be transmitted through the first contact electrode 710 and the second contact electrode 720 to travel toward the first electrode 210 and the second electrode 220.

[0154] A fourth insulating layer 540 may be disposed on the second contact electrode 720. The fourth insulating layer 540 may be disposed entirely on the substrate SUB to protect the components disposed on the substrate SUB from the influence of the external environment.

[0155] Figure 6 This is a view showing a light-emitting element according to an embodiment of the present disclosure.

[0156] Reference Figure 6 A light-emitting diode (LED) is a granular element and may have a rod-shaped or cylindrical shape with a certain (or predetermined) aspect ratio. The length of the LED may be greater than the diameter of the LED, and the aspect ratio may be in the range of, but is not limited to, from about 6:5 to about 100:1.

[0157] Light-emitting diodes (LEDs) can have dimensions ranging from nanometer-scale (from 1 nm to 1 μm) to micrometer-scale (from 1 μm to 1 mm). According to embodiments of this disclosure, both the diameter and length of the LED can be nanometer-scale or micrometer-scale. In some other embodiments, the diameter of the LED can be nanometer-scale, while the length of the LED can be micrometer-scale. In some embodiments, the diameter and / or length of some LEDs can be nanometer-scale, while the diameter and / or length of some other LEDs can be micrometer-scale.

[0158] According to embodiments of this disclosure, the light-emitting diode (ED) can be an inorganic light-emitting diode. An inorganic light-emitting diode may include multiple semiconductor layers. For example, an inorganic light-emitting diode may include a first conductivity type (e.g., n-type) semiconductor layer, a second conductivity type (e.g., p-type) semiconductor layer, and an active semiconductor layer therebetween. The active semiconductor layer may receive holes and electrons from the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, and the holes and electrons arriving at the active semiconductor layer may combine to emit light.

[0159] According to embodiments of this disclosure, the aforementioned semiconductor layers can be stacked sequentially along a direction X, which is the longitudinal direction of the light-emitting diode (ED). For example... Figure 6 As shown, a light-emitting diode (ED) may include a first semiconductor layer 31, an active layer 33, and a second semiconductor layer 32 sequentially stacked in the X direction. The first semiconductor layer 31, the active layer 33, and the second semiconductor layer 32 may be the first conductive semiconductor layer, the active semiconductor layer, and the second conductive semiconductor layer, respectively.

[0160] The first semiconductor layer 31 may be doped with a first conductivity type dopant. The first conductivity type dopant may be Si, Ge, Se, Sn, etc. According to embodiments of this disclosure, the first semiconductor layer 31 may be n-GaN doped with n-type Si. The first semiconductor layer 31 may occupy most of the volume of the light-emitting diode ED.

[0161] The second semiconductor layer 32 may be spaced apart from the first semiconductor layer 31, with the active layer 33 located between them. The second semiconductor layer 32 may be doped with a second conductivity type dopant such as Mg, Zn, Ca, and Ba. According to embodiments of this disclosure, the second semiconductor layer 32 may be p-GaN doped with p-type Mg.

[0162] The active layer 33 may comprise a material having a single quantum well structure or a multiple quantum well structure. As described above, the active layer 33 may emit light in response to an electrical signal applied through the first semiconductor layer 31 and the second semiconductor layer 32 when electron-hole pairs recombine therein.

[0163] In some embodiments, the active layer 33 may have a structure in which semiconductor materials with large band gaps and semiconductor materials with small band gaps are stacked alternately, and the active layer 33 may include other group III to group V semiconductor materials depending on the wavelength range of the emitted light.

[0164] Light emitted from the active layer 33 can exit not only through the two end surfaces of the light-emitting diode ED in the longitudinal direction, but also through the outer peripheral surface (e.g., the outer surface or side surface) of the light-emitting diode ED. For example, the direction of light propagation emitted from the active layer 33 is not limited to one direction.

[0165] The light-emitting diode (ED) may further include a component electrode layer 37 disposed on the second semiconductor layer 32. The component electrode layer 37 may contact the second semiconductor layer 32. The component electrode layer 37 may be an ohmic contact electrode, but is not limited thereto. The component electrode layer 37 may be, for example, a Schottky contact electrode.

[0166] When the two ends of the light-emitting diode ED are electrically connected to the contact electrodes 710 and 720 through which electrical signals are applied to the first semiconductor layer 31 and the second semiconductor layer 32, the element electrode layer 37 can be disposed between the second semiconductor layer 32 and the corresponding contact electrode to reduce the resistance between them. The element electrode layer 37 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). The element electrode layer 37 may include a semiconductor material doped with n-type or p-type impurities.

[0167] The light-emitting diode (ED) may further include an insulating film 38 surrounding the outer peripheral surfaces of the first semiconductor layer 31, the second semiconductor layer 32, the active layer 33, and / or the element electrode layer 37 (e.g., extending around the outer peripheral surfaces of the first semiconductor layer 31, the second semiconductor layer 32, the active layer 33, and / or the element electrode layer 37). The insulating film 38 may be configured to surround at least the outer surface of the active layer 33 and may extend in the direction X along which the ED extends. The insulating film 38 can protect the aforementioned elements. The insulating film 38 may comprise a material with insulating properties (or may be made of a material with insulating properties) and can prevent or substantially prevent electrical short circuits when the active layer 33 contacts the electrodes through which electrical signals are transmitted to the ED. Furthermore, because the insulating film 38 protects the active layer 33 and the outer peripheral surfaces of the first semiconductor layer 31 and the second semiconductor layer 32, it can mitigate or prevent a decrease in luminous efficiency.

[0168] According to embodiments of this disclosure, the active layer 33 of the light-emitting diode (LED) can be offset from the central region of the LED in the direction X along which the LED extends, such that the active layer 33 is positioned closer to the LED on the side in the direction X. As described above, the first semiconductor layer 31 can be formed to occupy most of the LED. For example, the length h2 of the first semiconductor layer 31 in the direction X can be greater than the length h3 of the second semiconductor layer 32 in the direction X, the length h4 of the active layer 33 in the direction X, and the length h5 of the element electrode layer 37 in the direction X. Moreover, the length h2 of the first semiconductor layer 31 in the direction X can be greater than the sum of the length h3 of the second semiconductor layer 32 in the direction X and the length h5 of the element electrode layer 37 in the direction X. In some embodiments, the length h2 of the first semiconductor layer 31 in the direction X can be greater than the sum h6 of the length h3 of the second semiconductor layer 32 in the direction X, the length h4 of the active layer 33 in the direction X, and the length h5 of the element electrode layer 37 in the direction X.

[0169] The length h2 of the first semiconductor layer 31 in direction X can be greater than half the length h1 of the light-emitting diode ED in direction X. Therefore, the active layer 33 disposed between the first semiconductor layer 31 and the second semiconductor layer 32 can be offset from the center of the light-emitting diode ED in direction X, positioning it closer to one side in direction X (e.g., the side where the second semiconductor layer 32 is disposed). Because the active layer 33 is positioned closer to one side of the light-emitting diode ED in the longitudinal direction, the intensity of light emitted from the active layer 33 through the two end surfaces and the outer peripheral surface of the light-emitting diode ED can be greater at the end closer to the active layer 33 than at the opposite end of the light-emitting diode ED. Furthermore, the intensity of light emitted through the outer peripheral surface of the light-emitting diode ED can be greater at the first end of the light-emitting diode ED closer to the active layer 33 than at the second end of the light-emitting diode ED.

[0170] Figure 7 It is shown Figure 4 An enlarged sectional view of region A. Figure 8 yes Figure 7 An enlarged sectional view of a portion of the document.

[0171] Reference Figure 7 and Figure 8 As described above, each of the first sub-dike 410 and the second sub-dike 420 may have a shape protruding from the via layer 165, and at least a portion of the shape of each of the first sub-dike 410 and the second sub-dike 420 facing the light-emitting diode ED may have a concave curved shape.

[0172] The first regions 410A and 420A of the first sub-dike 410 and the second sub-dike 420, respectively facing the two ends of the light-emitting diode ED, can have a concave curved shape in cross-section, while the second regions 410B and 420B of the first sub-dike 410 and the second sub-dike 420 can have a convex curved shape in cross-section. Each of the first sub-dike 410 and the second sub-dike 420 can have a cross-sectional shape in which the tilt angle of its outer surface varies along a third direction DR3. The tilt angle of each of the first sub-dike 410 and the second sub-dike 420 can be measured as the slope of the tangent on its outer surface. Each of the first regions 410A and 420A of the first sub-dike 410 and the second sub-dike 420 can have a cross-sectional shape in which the tilt angle of the outer surface (or surface) increases along a third direction DR3. Each of the second regions 410B and 420B of the first sub-dike 410 and the second sub-dike 420 can have a cross-sectional shape in which the tilt angle of the outer surface (or surface) decreases along a third direction DR3.

[0173] The inclination angle of the outer surface 410S of the first sub-dike 410 can vary along the third direction DR3. For example, the inclination angle of the outer surface 410A_S of the first region 410A of the first sub-dike 410 can increase along the third direction DR3. For example, the first inclination angle θ1a, the second inclination angle θ1b, and the third inclination angle θ1c of the outer surface 410A_S of the first region 410A of the first sub-dike 410 can be different from each other. Furthermore, as... Figure 8 As shown, the first tilt angle θ1a, the second tilt angle θ1b and the third tilt angle θ1c of the outer surface 410A_S of the first region 410A of the first sub-dike 410, which are measured sequentially on the third direction DR3, can increase along the third direction DR3.

[0174] The inclination angle of the outer surface 410B_S of the second region 410B of the first sub-dike 410 can decrease along the third direction DR3. For example, the first inclination angle θ2a, the second inclination angle θ2b, and the third inclination angle θ2c of the outer surface 410B_S of the second region 410B of the first sub-dike 410 can be different from each other. Additionally, as... Figure 8 As shown, the first tilt angle θ2a, the second tilt angle θ2b and the third tilt angle θ2c of the outer surface 410B_S of the second region 410B of the first sub-dike 410, which are measured sequentially on the third direction DR3, can decrease along the third direction DR3.

[0175] It will be understood that the preceding description can be applied equally to the first region 420A and the second region 420B of the second sub-dike 420.

[0176] As described above, the first electrode 210 and the second electrode 220 can be respectively disposed on the first sub-dike 410, the second sub-dike 420, and the via layer 165. The first electrode 210 and the second electrode 220 can be respectively disposed on the first sub-dike 410, the second sub-dike 420, and the via layer 165, and can have a cross-sectional shape consistent with the cross-sectional shape of the surface disposed below the first sub-dike 410, the second sub-dike 420, or the via layer 165. For example, the cross-sectional shape of the surface of the first electrode 210 and the second electrode 220 can be consistent with the shape of the outer surface (or surface) of the first sub-dike 410, the second sub-dike 420, and / or the via layer 165 disposed below them.

[0177] The first electrode 210 may have a first portion 210A disposed on a first region 410A of the first sub-dike 410, a second portion 210B disposed on a second region 410B of the first sub-dike 410, and a third portion 210C disposed on a via layer 165 between the first sub-dike 410 and the second sub-dike 420 (i.e., a third portion 210C extending beyond the first sub-dike 410 from the first portion 210A of the first electrode 210 toward the light-emitting diode ED). Similar to the first electrode 210, the second electrode 220 may have a first portion 220A, a second portion 220B, and a third portion 220C, and therefore its description will be omitted.

[0178] The first portion 210A of the first electrode 210 can be stacked on the third direction DR3 with the first region 410A of the first sub-dike 410. The cross-sectional shape of the surface of the first portion 210A of the first electrode 210 can be consistent with the shape of the outer surface of the first region 410A of the first sub-dike 410. Similar to the first region 410A of the first sub-dike 410, the cross-sectional shape of the surface of the first portion 210A of the first electrode 210 can have a concave curved shape.

[0179] The second portion 210B of the first electrode 210 can be stacked on the third direction DR3 with the second region 410B of the first sub-dike 410. The cross-sectional shape of the surface of the second portion 210B of the first electrode 210 can be consistent with the shape of the outer surface of the second region 410B of the first sub-dike 410. Similar to the second region 410B of the first sub-dike 410, the cross-sectional shape of the surface of the second portion 210B of the first electrode 210 can have a convex curved shape.

[0180] The third portion 210C of the first electrode 210 can be disposed on the via layer 165 between the first sub-dike 410 and the second sub-dike 420. The cross-sectional shape of the surface of the third portion 210C of the first electrode 210 can have a shape corresponding to the shape of the outer surface of the via layer 165. For example, similar to the via layer 165, the surface of the third portion 210C of the first electrode 210 can be flat.

[0181] The tilt angle of the outer surface 210S of the first electrode 210 can vary along the third direction DR3. For example, the tilt angle of the outer surface 210A_S of the first portion 210A of the first electrode 210 can increase along the third direction DR3. For example, the first tilt angle θ3a, the second tilt angle θ3b, and the third tilt angle θ3c of the outer surface 210A_S of the first portion 210A of the first electrode 210 can be different from each other. Furthermore, as... Figure 8 As shown, the first tilt angle θ3a, the second tilt angle θ3b and the third tilt angle θ3c of the outer surface 210A of the first portion 210A of the first electrode 210, which are measured sequentially on the third direction DR3, can increase along the third direction DR3.

[0182] The tilt angle of the outer surface 210B_S of the second portion 210B of the first electrode 210 can decrease along the third direction DR3. For example, the first tilt angle θ4a, the second tilt angle θ4b, and the third tilt angle θ4c of the outer surface 210B_S of the second portion 210B of the first electrode 210 can be different from each other. Additionally, as... Figure 8 As described above, the first tilt angle θ4a, the second tilt angle θ4b, and the third tilt angle θ4c of the outer surface 210B_S of the second portion 210B of the first electrode 210, which are sequentially measured on the third direction DR3, can decrease along the third direction DR3.

[0183] The direction in which the light-emitting diode (ED) extends can be parallel to the upper surface of the substrate SUB. Multiple semiconductor layers included in the ED can be sequentially arranged along a direction parallel to the upper surface of the substrate SUB. For example, the first semiconductor layer 31, the active layer 33, and the second semiconductor layer 32 of the ED can be sequentially arranged parallel to the upper surface of the substrate SUB. The second semiconductor layer 32 can be closer to the first end of the ED than the second end, and the first semiconductor layer 31 can be closer to the second end of the ED than the first end.

[0184] Light generated in (and emitted from) the active layer 33 of the light-emitting diode (LED) can exit through both end surfaces and the outer peripheral surface of the LED. Light exiting through the two end surfaces of the LED can be incident on the first dam 400. In this case, the direction along which the light emitted from the LED travels (e.g., is reflected to travel or propagate) can be determined based on the shape of the outer surface of the first dam 400 facing the LED. For example, a first electrode 210 and a second electrode 220, serving as a reflective layer that reflects the light emitted from the LED toward the display side, are disposed on the first sub-dam 410 and the second sub-dam 420 to reflect (or have) the surface shape of the element disposed below them. Therefore, the direction along which the light emitted from the LED travels can be determined based on the shapes of the outer surfaces of the first sub-dam 410 and the second sub-dam 420, respectively facing the two ends of the LED.

[0185] According to this embodiment, the outer surfaces of the first regions 410A and 420A of the first sub-dike 410 and the second sub-dike 420 facing the two ends of the light-emitting diode ED can each have a concave curved shape. Therefore, the surfaces of the first electrode 210 and the second electrode 220 disposed on the first regions 410A and 420A of the first sub-dike 410 and the second sub-dike 420 can each have a concave curved shape. Because the cross-sectional shape of the surfaces of the first portions 210A and 220A of the first electrode 210 and the second electrode 220 facing the two ends of the light-emitting diode ED is a concave curved shape, the angle of incidence of light emitted from the light-emitting diode ED that is incident on the first portions 210A and 220A of the first electrode 210 and the second electrode 220 can be reduced compared to the angle of incidence of a convex curved shape. Therefore, the amount of light emitted from the light-emitting diode ED and guided toward the display side increases and can be more effectively concentrated. As a result, the luminous efficiency of each sub-pixel SPX can be improved.

[0186] The height hb of the first region 410A of the first sub-dike 410 can be less than the height ha of the first sub-dike 410. Furthermore, in cross-section, the height hb of the first region 410A of the first sub-dike 410 can be greater than the height he from the upper surface of the via layer 165 to the upper surface of the light-emitting diode ED; that is, the height from the surface of the substrate SUB to the top of the first region 410A of the first sub-dike 410 can be greater than the height from the surface of the substrate SUB to the upper surface of the light-emitting diode ED. Because the height hb of the first region 410A of the first sub-dike 410 is greater than the height he from the upper surface of the via layer 165 to the upper surface of the light-emitting diode ED in cross-section, light can still be incident on the first region 410A of the first sub-dike 410 even when the light emitted through the two end surfaces of the light-emitting diode ED has a certain directional angle. Therefore, the efficiency of focusing light emitted from the light-emitting diode ED using the first portion 210A of the first electrode 210 with a concave curved shape can be improved.

[0187] As described above, the first electrode 210 and the second electrode 220 may protrude (or extend beyond) the first sub-dike 410 and the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420, respectively. The width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 into the region between the first sub-dike 410 and the second sub-dike 420 may be greater than the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420. That is, the width d1 of the third portion 210C of the first electrode 210 may be greater than the width d2 of the third portion 220C of the second electrode 220.

[0188] The first electrode 210 can be stacked below the light-emitting diode ED on the third-direction DR3, overlapping with the first end of the light-emitting diode ED, and the second electrode 220 can be stacked below the light-emitting diode ED on the third-direction DR3, overlapping with the second end of the light-emitting diode ED. The width w1 of the area where the first electrode 210 overlaps with the first end of the light-emitting diode ED on the third-direction DR3 can be greater than the width w2 of the area where the second electrode 220 overlaps with the second end of the light-emitting diode ED on the third-direction DR3. For example, the light-emitting diode ED can be located at the center of the area between the first sub-dike 410 and the second sub-dike 420. Therefore, the third horizontal distance d3 between the first sub-dike 410 and the first end of the light-emitting diode ED can be equal to the fourth horizontal distance d4 between the second sub-dike 420 and the second end of the light-emitting diode ED. Although the light-emitting diode ED is generally disposed at the center between the first sub-bank 410 and the second sub-bank 420, the first electrode 210 and the second electrode 220 are formed such that the width d1 of the first electrode 210 protruding from the first sub-bank 410 into the region between the first sub-bank 410 and the second sub-bank 420 is greater than the width d2 of the second electrode 220 protruding from the second sub-bank 420 into the region between the first sub-bank 410 and the second sub-bank 420. Therefore, the width w1 of the first electrode 210 in the region on the third-direction DR3 where it overlaps with the first end of the light-emitting diode ED can be greater than the width w2 of the second electrode 220 in the region on the third-direction DR3 where it overlaps with the second end of the light-emitting diode ED.

[0189] Furthermore, the width w1 of the first electrode 210 at the region where it overlaps with the first end of the light-emitting diode ED on the third-direction DR3 can be greater than the distance h6 from the first end of the light-emitting diode ED to the first semiconductor layer 31. Therefore, the width w1 of the first electrode 210 at the region where it overlaps with the first end of the light-emitting diode ED on the third-direction DR3 is greater than the width w2 of the second electrode 220 at the region where it overlaps with the second end of the light-emitting diode ED on the third-direction DR3, and is also greater than the distance h6 from the first end of the light-emitting diode ED to the first semiconductor layer 31. Therefore, the first electrode 210 can cover the second semiconductor layer 32 and the active layer 33 of the light-emitting diode ED below it (e.g., it can extend entirely below the second semiconductor layer 32 and the active layer 33 of the light-emitting diode ED). Therefore, light emitted from the active layer 33 of the light-emitting diode ED and traveling downwards can be reflected by the first electrode 210 to improve light emission efficiency.

[0190] Figure 9 It is a cross-sectional view showing the direction along which light emitted from the light-emitting diode of the display device according to the embodiment travels (or propagates). Figure 10 It is shown Figure 9 An enlarged sectional view of region B.

[0191] Reference Figure 9 and Figure 10 The path along which light emitted from a light-emitting diode (ED) is transmitted through multiple insulating layers and / or contact electrodes 710 and 720 and then reflected by the first electrode 210 and the second electrode 220 will be described in detail.

[0192] Reference Figure 9 and Figure 10 The first light L1 generated in the active layer 33 of the light-emitting diode ED and emitted through its two end surfaces can be incident on the first regions 410A and 420A of the first sub-dike 410 and the second sub-dike 420. For example, the first light L1a emitted through one end surface of the light-emitting diode ED can be incident on the first region 410A of the first sub-dike 410, and the first light L1b emitted through the opposite end surface of the light-emitting diode ED can be incident on the first region 420A of the second sub-dike 420. The first light L1a incident on the first region 410A of the first sub-dike 410 and the first light L1b incident on the first region 420A of the second sub-dike 420 can be transmitted (e.g., can be transmitted through) the transparent insulating layers 510 and 530 and the first contact electrode 710 and the second contact electrode 720 to be incident on the surfaces of the first electrode 210 and the second electrode 220. The surfaces of the first portions 210A and 220A of the first electrodes 210 and 220, which are disposed on the first regions 410A and 420A of the first sub-dikes 410 and 420A, have a concave curved shape. Therefore, the first incident angle θI1 of the first light L1 can be smaller than the first incident angle when the surfaces of the first and second sub-dikes are set to a convex curved shape. Thus, because the first reflection angle θR1 of the reflected light LR1 has an angle equal to the first incident angle θI1 of the first light L1, the efficiency of focusing the reflected light LR1 can be improved.

[0193] Furthermore, most of the light generated from the active layer 33 of the light-emitting diode (ED) and emitted through its outer peripheral surface can be closer to the first electrode 210. Therefore, among the light emitted through the outer peripheral surface of the ED, the downward-traveling second light L2 can be reflected by the first electrode 210 positioned below the ED. The second light L2 traveling downward from the outer peripheral surface of the ED can be incident on the third portion 210C of the first electrode 210 at a second incident angle θI2, and can be reflected at the surface 210C_S of the third portion 210C of the first electrode 210 at a second reflection angle θR2, thereby incident on the first portion 210A of the first electrode 210 at a third incident angle θI3. Since the reflected light LR2 incident at the third incident angle θI3 is reflected as reflected light LR3, and the third reflection angle θR3 of the reflected light LR3 has an angle equal to the third incident angle θI3 of the reflected light LR2, the efficiency of focusing the reflected light LR3 of the second light L2 can be improved.

[0194] Figure 11 This illustrates a different embodiment. Figure 4 An enlarged sectional view of region A.

[0195] Figure 11 The embodiments shown are similar to Figure 7 The difference in the embodiment shown is that the third insulating layer 530 is omitted.

[0196] For example, the first contact electrode 710 and the second contact electrode 720_1 can be directly disposed on the second insulating layer 520. The first contact electrode 710 and the second contact electrode 720_1 can be spaced apart from each other on the second insulating layer 520 to expose a portion of the second insulating layer 520. The exposed portion of the second insulating layer 520 between the first contact electrode 710 and the second contact electrode 720_1 can contact the fourth insulating layer 540.

[0197] According to this embodiment, even if the third insulating layer 530 is omitted, the second insulating layer 520 still includes insulating material for fixing the light-emitting diode ED. The first contact electrode 710 and the second contact electrode 720_1 can be patterned and formed together (e.g., concurrently or simultaneously) via a single mask process. Therefore, no additional mask process is required to form the first contact electrode 710 and the second contact electrode 720_1, thus improving the efficiency of the manufacturing process of the display device 10. Except for omitting the third insulating layer 530, this embodiment is similar to... Figure 7 The embodiments are the same; therefore, redundant descriptions will be omitted.

[0198] Figures 12 to 19 This is a cross-sectional view illustrating the process steps for manufacturing a display device according to an embodiment of the present disclosure.

[0199] First, refer to Figure 12 Prepare a substrate SUB and form a circuit element layer CCL on the substrate SUB. The circuit element layer CCL may include a buffer layer 161, a bottom metal layer 110, a first conductive layer, a second conductive layer, a third conductive layer, a semiconductor layer, a gate insulator 162, a first interlayer dielectric layer 163, a second interlayer dielectric layer 164, and a via layer 165. (As mentioned above regarding, for example...) Figure 4 As discussed, the first electrode contact opening CT1 and the second electrode contact opening CT2 can be formed through the via layer 165 to expose the first conductive pattern CDP and the second voltage line VL2. The semiconductor layer, multiple conductive layers, and insulating layer can be formed via typical processes known in the art. Therefore, their detailed description will be omitted.

[0200] Subsequently, referring to Figure 13 A material layer 400' for the first dam is formed on the perforated layer 165. The material layer 400' for the first dam can be completely applied to the substrate SUB.

[0201] Subsequently, the material layer 400' is exposed and developed using a photomask MK, so that a first dike 400 including a patterned first sub-dike 410 and a second sub-dike 420 can be formed.

[0202] First, prepare (or arrange) a photomask MK above the substrate SUB.

[0203] A photomask MK may include multiple regions R1, R2, and R3 with different transmittances. The photomask MK may include a first transparent region R1, a second transparent region R2, and a blocking region R3, depending on the transmittance of light. The transmittance of the blocking region R3 may be lower than that of each of the first transparent region R1 and the second transparent region R2. For example, the blocking region R3 may substantially block all light supplied from the outside (e.g., it may have approximately 0% transmittance), the first transparent region R1 may substantially transmit all light supplied from the outside (e.g., it may have approximately 100% transmittance), and the second transparent region R2 may transmit some of the light supplied from the outside (e.g., it may have approximately 20% to 30% transmittance). However, it will be understood that this disclosure is not limited thereto. The blocking region R3 may transmit some of the light with a transmittance significantly lower than that of each of the first transparent region R1 and the second transparent region R2.

[0204] Subsequently, the photomask MK can be placed above the material layer 400', and the exposure process can be performed.

[0205] The photomask MK can be configured such that the light-blocking region R3 corresponds to the region where the first dam 400 is not formed (e.g., aligned over the region where the first dam 400 is not formed), the second light-transmitting region R2 corresponds to the regions where the first regions 410A and 420A of the first dam 400 are formed, and the first light-transmitting region R1 corresponds to the regions where the second regions 410B and 420B of the first dam 400 are formed. For example, the region where the material layer 400' for the first dam is retained and requires a concave curved shape can correspond to the second light-transmitting region R2, the region where the material layer 400' for the first dam is retained but does not require a concave curved shape can correspond to the first light-transmitting region R1, and the region where the material layer 400' for the first dam is removed can correspond to the light-blocking region R3.

[0206] The light-blocking region R3 blocks externally supplied light, preventing it from reaching the material layer 400' superimposed on the area where the first dam 400 should not form. Additionally, the second light-transmitting region R2 allows only a portion of the light to reach the material layer 400' superimposed on the area where the material layer 400' is retained and will form a concave curved shape. Furthermore, the first light-transmitting region R1 allows most of the light to reach the material layer 400' superimposed on the area where the material layer 400' is retained but will not form a concave curved shape. Since the chemical properties of the material layer 400' change depending on whether it is exposed, it is possible to selectively remove some areas of the material layer 400' while retaining others using a developing solution.

[0207] Therefore, as Figure 14 As shown, through exposure and development processes, the material layer 400' corresponding to the light-blocking area R3 can be removed, and second regions 410B and 420B of the first sub-dike 410 and the second sub-dike 420 can be formed in the area corresponding to the first light-transmitting area R1. Furthermore, first regions 410A and 420A of the first sub-dike 410 and the second sub-dike 420 can be formed in the area corresponding to the second light-transmitting area R2.

[0208] Subsequently, referring to Figure 15A first electrode 210 and a second electrode 220 can be formed on the first dam 400. Patterned first electrodes 210 and second electrodes 220 can be formed via a mask process. For example, a material layer for the electrodes is completely deposited on the first dam 400 (and in some embodiments, on the via layer 165). During the deposition process, the material layer for the electrodes can be deposited into the interior of the first electrode contact opening CT1 and the second electrode contact opening CT2 penetrating the via layer 165, and can be connected to the first conductive pattern CDP and the second voltage line VL2 below them. Subsequently, after applying a photoresist layer to the material layer for the electrodes, a photoresist pattern is formed by exposure and development, and then the photoresist pattern is used as an etching mask to etch the material layer for the electrodes. Subsequently, as... Figure 15 As shown, the photoresist pattern is removed by a stripping process or an ashing process to form a patterned first electrode 210 and a second electrode 220.

[0209] As described above, the first electrode 210 and the second electrode 220 can be configured such that the width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 into the region between the first sub-dike 410 and the second sub-dike 420 can be different from the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420. For example, the first electrode 210 and the second electrode 220 can be configured such that the width d1 of the portion of the first electrode 210 extending from the first sub-dike 410 into the region between the first sub-dike 410 and the second sub-dike 420 can be greater than the width d2 of the portion of the second electrode 220 extending from the second sub-dike 420 into the region between the first sub-dike 410 and the second sub-dike 420.

[0210] Subsequently, as Figure 16 As shown, a first insulating layer 510 is formed on the first electrode 210 and the second electrode 220, and a second dam 600 is formed. The first insulating layer 510 can be configured on the substrate SUB to completely cover the first electrode 210 and the second electrode 220, and can be partially patterned during subsequent processes to form, for example... Figure 4 and Figure 5 The first insulating layer 510 shown.

[0211] Subsequently, as Figure 17As shown, a light-emitting diode (LED) is disposed between the first sub-dike 410 and the second sub-dike 420. The LED can be disposed using an inkjet process. For example, ink in which the LEDs are dispersed is sprayed into an emission region EMA separated by the second dike 600, and an alignment signal is applied between the first electrode 210 and the second electrode 220. Then, by using the electric field formed between the first electrode 210 and the second electrode 220, the LED can be aligned so that its two ends are respectively placed on the first electrode 210 and the second electrode 220.

[0212] Subsequently, as Figure 18 As shown, a second insulating layer 520, a first contact electrode 710, and a third insulating layer 530 are formed on the light-emitting diode ED.

[0213] First, it can be formed through the following process. Figure 18 The second insulating layer 520 shown is formed by completely stacking the second insulating material layer on a substrate SUB on which the light-emitting diode ED and the first insulating layer 510 are formed, and removing a portion of the second insulating material layer to expose the first and second ends of the light-emitting diode ED.

[0214] Subsequently, a first contact electrode 710 is formed on the second insulating layer 520. In an embodiment, the first contact electrode 710 can be formed via a mask process. For example, a material layer for the first contact electrode is completely disposed on the substrate SUB. Subsequently, a photoresist layer is applied to the material layer for the first contact electrode, and a photoresist pattern is formed by exposure and development. Then, etching is performed using the photoresist pattern as an etching mask. The material layer for the first contact electrode can be etched entirely by, but not limited to, wet etching. Subsequently, the photoresist pattern can be removed via a stripping process or an ashing process to form the first contact electrode 710 as shown, for example, in Figure 18.

[0215] Subsequently, a third insulating layer 530 is formed on the first contact electrode 710. The patterned third insulating layer 530 can be formed by completely depositing a material layer for the third insulating layer on the substrate SUB and forming an opening on the second electrode 220 for exposing the first insulating layer 510 and the second end of the light-emitting diode ED.

[0216] Subsequently, as Figure 19As shown, a second contact electrode 720 is formed on a third insulating layer 530. In an embodiment, the second contact electrode 720 can be formed via a mask process. For example, a material layer for the second contact electrode is completely disposed on a substrate SUB. Subsequently, a photoresist layer is applied to the material layer for the second contact electrode, and a photoresist pattern is formed by exposure and development. Then, etching is performed using the photoresist pattern as an etching mask. The material layer for the second contact electrode 720 can be etched entirely by, but not limited to, wet etching. Subsequently, the photoresist pattern can be removed via a stripping process or an ashing process to form, for example... Figure 19 The second contact electrode 720 is shown in the figure.

[0217] Subsequently, a fourth insulating layer 540 is completely formed on the substrate SUB, thereby manufacturing, for example... Figure 4 The display device 10 shown is shown.

[0218] Other embodiments of this disclosure will be described below. In the following description, the same or similar elements will be denoted by the same or similar reference numerals, and redundant descriptions may be omitted or briefly described. The description will focus on the differences from the embodiments described above.

[0219] Figure 20 Along another embodiment Figure 3 A cross-sectional view taken from line Q2-Q2'.

[0220] Figure 20 The embodiments shown are similar to Figure 7 The difference in the embodiment shown is that the height hb of the first regions 410A and 420A of the first sub-dike 410_1 and the second sub-dike 420_1 (collectively referred to as the first dike 400_1) is equal to the maximum height ha of the first sub-dike 410_1 and the second sub-dike 420_1.

[0221] According to this embodiment, in the display device 10, the height hb of the first regions 410A and 420A of the first sub-dike 410_1 and the second sub-dike 420_1 is equal to the maximum height ha of the first sub-dike 410_1 and the second sub-dike 420_1. Therefore, the amount of light emitted from the light-emitting diode ED and incident on the first regions 410A and 420A of the first sub-dike 410_1 and the second sub-dike 420_1 can be increased. For example, the amount of light emitted from the light-emitting diode ED and leaking through areas other than the first regions 410A and 420A of the first sub-dike 410_1 and the second sub-dike 420_1 can be reduced. As a result, the amount of light emitted from the light-emitting diode ED and incident on the first regions 410A and 420A of the first sub-dike 410_1 and the second sub-dike 420_1 is increased, thereby further improving the efficiency of focusing the light emitted from the light-emitting diode ED.

[0222] Figure 21 According to another embodiment, along Figure 3 A cross-sectional view taken from line Q2-Q2'.

[0223] Figure 21 The embodiments shown are similar to Figure 20 The difference in the embodiment shown is that the outer surface of the first dike 400_2 facing the second dike 600 may also include a concave curved shape.

[0224] For example, the first sub-dike 410_2 may include a first region 410A1 facing the first end of the light-emitting diode ED and having a concave curved shape, a second region 410A2 facing the second dike 600 and having a concave curved shape, and a third region 410B disposed between the first region 410A1 and the second region 410A2. The third region 410B of the first sub-dike 410_2 may have a convex curved shape or a flat surface.

[0225] Similarly, the second sub-dike 420_2 may include a first region 420A1 facing the second end of the light-emitting diode ED and having a concave curved shape, a second region 420A2 facing the second dike 600 and having a concave curved shape, and a third region 420B disposed between the first region 420A1 and the second region 420A2. The third region 420B of the second sub-dike 420_2 may have a convex curved shape or a flat surface.

[0226] In summarizing the detailed description, those skilled in the art will understand that many variations and modifications can be made to the embodiments without substantially departing from the disclosed principles. Therefore, the disclosed embodiments are used in a general and descriptive sense only and not for limiting purposes.

Claims

1. A display device, the display device comprising: Base; The first dike includes a first sub-dike and a second sub-dike that are spaced apart from each other on the base; The first electrode is located on the first sub-dike; The second electrode is located on the second sub-dike and is spaced apart from the first electrode; as well as The light-emitting element is located between the first sub-dike and the second sub-dike. Each of the first sub-dike and the second sub-dike has a first region, which has a concave curved shape in cross-section and is adjacent to the light-emitting element. The first electrode has a first portion extending toward the light-emitting element beyond the first sub-dike. The second electrode has a first portion extending beyond the second sub-dike toward the light-emitting element, and The width of the first portion of the first electrode is different from the width of the first portion of the second electrode.

2. The display device according to claim 1, wherein, The inclination angle of the outer surface of the first region of the first sub-dike and the inclination angle of the outer surface of the first region of the second sub-dike increase along the thickness direction of the base.

3. The display device according to claim 2, wherein, Each of the first sub-dike and the second sub-dike also has a second region, the inclination angle of the outer surface of the second region decreasing along the thickness direction of the substrate.

4. The display device according to claim 1, wherein, The first electrode is formed on the first sub-dike and along the surface shape of the first sub-dike, and The second electrode is located on the second sub-dike and is formed along the surface shape of the second sub-dike.

5. The display device according to claim 1, wherein, The first electrode also has a second portion on the first region of the first sub-dike. The second electrode further comprises a second portion on the first region of the second sub-dike, and Each of the second portion of the first electrode and the second portion of the second electrode has a concave curved shape in cross-section.

6. The display device according to claim 5, wherein, Each of the first electrode and the second electrode comprises silver, aluminum, or an alloy thereof.

7. The display device according to claim 5, wherein, The second portion of the first electrode and the second portion of the second electrode respectively face the opposite ends of the light-emitting element.

8. The display device according to claim 1, further comprising a via layer, the via layer being on the substrate and having a flat surface. in, The first sub-dike and the second sub-dike are directly on the perforated layer.

9. The display device according to claim 8, wherein, The first electrode also has a second portion, which is located on the first region of the first sub-dike and has a concave curved shape in cross-section. The first portion of the first electrode is on the via layer and is flat.

10. The display device according to claim 9, wherein, The first portion of the first electrode extends from the second portion of the first electrode.

11. The display device according to claim 1, wherein, The height from the surface of the substrate to the top of the first region of the first sub-dike is greater than the height from the surface of the substrate to the upper surface of the light-emitting element.

12. The display device according to claim 1, wherein, The first end of the light-emitting element is superimposed on the first portion of the first electrode in the thickness direction of the substrate. Wherein, the second end of the light-emitting element overlaps with the first portion of the second electrode in the thickness direction of the substrate, and Wherein, the width of the first portion of the first electrode is greater than the width of the first portion of the second electrode.

13. The display device according to claim 12, wherein, The width of the first end of the light-emitting element in the region where it overlaps with the first portion of the first electrode in the thickness direction of the substrate is greater than the width of the second end of the light-emitting element in the region where it overlaps with the first portion of the second electrode in the thickness direction of the substrate.

14. The display device according to claim 13, wherein, The light-emitting element includes: a first semiconductor layer; a second semiconductor layer spaced apart from the first semiconductor layer; and an active layer between the first semiconductor layer and the second semiconductor layer. In this configuration, the second semiconductor layer is closer to the first end of the light-emitting element than to the second end of the light-emitting element. In this configuration, the first semiconductor layer is closer to the second end of the light-emitting element than to the first end of the light-emitting element.

15. The display device according to claim 14, wherein, The active layer is closer to the first end of the light-emitting element relative to the center of the light-emitting element, and The first portion of the first electrode extends beneath the entire second semiconductor layer and the active layer of the light-emitting element.

16. A display device, the display device comprising: Base; A via layer is provided on the substrate. The first sub-dike is located on the perforated layer; The second sub-dike is located on the perforated layer and is spaced apart from the first sub-dike; The first electrode is located on the first sub-dike; The second electrode is located on the second sub-dike; as well as The light-emitting element is located between the first sub-dike and the second sub-dike. Each of the first and second sub-dikes has a first region facing both ends of the light-emitting element and having a concave curved shape in cross-section. The first electrode has: a first portion on the first region of the first sub-dike; and a second portion extending from the first portion of the first electrode toward the light-emitting element. The second electrode has: a first portion on the first region of the second sub-dike; and a second portion extending from the first portion of the second electrode toward the light-emitting element. Wherein, the second portion of the first electrode and the second portion of the second electrode are spaced apart from each other on the via layer, and The width of the second portion of the first electrode is different from the width of the second portion of the second electrode.

17. The display device according to claim 16, wherein, The first electrode is formed on the first sub-dike and the via layer, and is formed along the surface shape of the first sub-dike and the via layer below the first electrode. The second electrode is formed on the second sub-dike and the via layer, and is formed along the surface shape of the second sub-dike and the via layer below the second electrode.

18. The display device according to claim 17, wherein, Each of the first portion of the first electrode and the first portion of the second electrode has a concave curved shape in cross-section, and Each of the second portion of the first electrode and the second portion of the second electrode is flat.

19. The display device according to claim 16, wherein, The light-emitting element includes an active layer. Wherein, the active layer is closer to the first end of the light-emitting element relative to the center of the light-emitting element, and The first end of the light-emitting element faces the first region of the first sub-dike.

20. The display device according to claim 19, wherein, The second portion of the first electrode is stacked with the first end of the light-emitting element in the thickness direction of the substrate. Wherein, the second portion of the second electrode overlaps with the second end of the light-emitting element in the thickness direction of the substrate, and Wherein, the width of the second portion of the first electrode is greater than the width of the second portion of the second electrode.

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