Erbium ion-doped tellurium germanate glass-ceramics, preparation method and application thereof

Abstract

The application provides an erbium ion doped tellurium germanate glass ceramic and a preparation method and application thereof. The erbium ion doped tellurium germanate glass ceramic can emit predetermined color light through first laser and second laser excitation, the first laser wavelength is 850nm or 808nm, and the second laser wavelength is 1550nm. The erbium ion doped tellurium germanate glass ceramic not only can convert and emit light under laser excitation, but also needs to emit predetermined color light under the common irradiation of the first laser and the second laser, that is, the tellurium germanate glass ceramic has good double-frequency conversion light emitting characteristics, double-frequency excitation addressable use in the tellurium germanate glass ceramic body is realized, and thus three-dimensional display is realized. Specifically, the light path design is combined with various high-speed dynamic three-dimensional image functions of computer processing to realize dynamic three-dimensional display through addressing in the glass ceramic of the application.

Description

Technical Field

[0001] This invention relates to the technical field of glass-ceramics, specifically to erbium ion-doped tellurium germanate glass-ceramics, their preparation methods and applications, and more specifically to erbium ion-doped tellurium germanate glass-ceramics, their preparation methods, addressing devices, and methods for addressing using the addressing devices. Background Technology

[0002] Glass, as a commonly used luminescent material, possesses an isotropic refractive index, a wide transparency range, and low propagation loss. Tellurate glass, in particular, has a low melting point (750–800℃), high thermal stability, and low phonon energy (700 cm⁻¹). -1 Due to its high refractive index and high nonlinear refractive index, tellurate glass exhibits high solubility for rare earth ions compared to silicate, borate, and phosphate glasses. Combined with its high refractive index and low phonon energy, this ensures a low absorption coefficient and high emissivity. However, the presence of a single pair of electrons in the TeO2 structure prevents it from forming a glass network on its own. Adding other heavy metal oxides ensures its glass-forming ability. Tellurium germanate glass can be formed by mixing GeO2 and TeO2 while maintaining the excellent properties of rare earth ion-doped tellurate systems. Currently, it is common practice to dope tellurium germanate microcrystals with certain rare earth elements to enable them to convert to light emission under laser excitation. However, this emission is limited to a specific type of laser excitation, thus restricting the application of tellurium germanate glass with convertible light emission. Summary of the Invention

[0003] The present invention aims to at least partially solve one of the technical problems in the related art. Therefore, one object of the present invention is to provide an erbium ion-doped tellurium germanate microcrystalline glass.

[0004] In one aspect, the present invention provides an erbium-doped tellurium germanate microcrystalline glass. According to an embodiment of the present invention, this erbium-doped tellurium germanate microcrystalline glass can emit light of a predetermined color when excited by a first laser and a second laser, wherein the wavelength of the first laser is 850 nm or 808 nm, and the wavelength of the second laser is 1550 nm. Thus, this erbium-doped tellurium germanate microcrystalline glass can not only convert light emission under laser excitation, but also emit light of a predetermined color under the combined irradiation of the first and second lasers. That is, the tellurium germanate microcrystalline glass has excellent dual-frequency conversion light emission characteristics, realizing the application of addressable dual-frequency excitation within the tellurium germanate microcrystalline glass body, thereby achieving three-dimensional stereoscopic display. Specifically: the optical path design combines various high-speed dynamic stereoscopic image functions processed by computer, enabling dynamic three-dimensional display through addressing within the microcrystalline glass of the present invention.

[0005] According to an embodiment of the present invention, the predetermined color light is green light.

[0006] According to an embodiment of the present invention, the erbium-doped tellurium germanate microcrystalline glass comprises TeO2, ZnO, GeO2, and ErF3. Based on the total molar amount of TeO2, ZnO, GeO2, and ErF3, the erbium-doped tellurium germanate microcrystalline glass comprises: 18% to 80% molar percentage of TeO2; 10% to 40% molar percentage of ZnO; 1% to 70% molar percentage of GeO2; and 0.001% to 5% molar percentage of ErF3. Optionally, the erbium-doped tellurium germanate microcrystalline glass further comprises a flux, the mass of which is 5% to 10% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3, wherein the flux comprises at least one of Li2CO3 and Na2CO3.

[0007] According to embodiments of the present invention, based on the total molar amount of TeO2, ZnO, GeO2, and ErF3, the erbium ion-doped tellurium germanate microcrystalline glass comprises: 40%–70% molar percentage of TeO2; 15%–25% molar percentage of ZnO; 8%–40% molar percentage of GeO2; 1%–3% molar percentage of ErF3; and further comprises: Li2CO3 and Na2CO3, wherein the mass of Li2CO3 is 2%–4% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3, and the mass of Na2CO3 is 5%–8% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3.

[0008] In another aspect, the present invention provides a method for preparing the aforementioned erbium-doped tellurium germanate microcrystalline glass. According to an embodiment of the present invention, the method for preparing erbium-doped tellurium germanate microcrystalline glass includes: weighing appropriate amounts of TeO2, ZnO, GeO2, and erbium salt and mixing them uniformly; drying the mixture to obtain a dried mixed raw material; melting the dried mixed raw material to obtain a glass melt; casting the glass melt to obtain a semi-finished product; and subjecting the semi-finished product to a first annealing treatment and a second annealing treatment sequentially to obtain the erbium-doped tellurium germanate microcrystalline glass. Thus, the erbium-doped tellurium germanate microcrystalline glass prepared by the above method can not only convert light emission under laser excitation, but also emits a predetermined color light under the combined irradiation of a first laser and a second laser. That is, the tellurium germanate microcrystalline glass has excellent dual-frequency conversion light emission characteristics, realizing the application of dual-frequency excitation addressable within the tellurium germanate microcrystalline glass body, thereby achieving three-dimensional stereoscopic display. Specifically: The optical path design, combined with various high-speed dynamic stereoscopic image functions processed by computers, enables dynamic three-dimensional display by addressing within the microcrystalline glass of this invention.

[0009] According to an embodiment of the present invention, the method for preparing erbium ion-doped tellurium germanate microcrystalline glass further includes at least one of the following steps: prior to the drying treatment, further comprising: grinding the mixture; and polishing the product after the second annealing treatment.

[0010] According to an embodiment of the present invention, the drying temperature is 100-400°C, and the drying time is 1-5 hours.

[0011] According to an embodiment of the present invention, the temperature of the melting treatment is 780-1100°C, and the melting treatment time is 10-80 minutes.

[0012] According to an embodiment of the present invention, the temperature of the first annealing treatment is 20 to 50°C below the phase transition temperature of the erbium-doped tellurium germanate microcrystalline glass, and the time of the first annealing treatment is 1 to 4 hours; the temperature of the second annealing treatment is greater than or equal to 350°C and less than the crystallization start temperature of the erbium-doped tellurium germanate microcrystalline glass, and the time of the second annealing treatment is 0.5 to 2 hours.

[0013] In another aspect, the present invention provides an addressing device. According to an embodiment of the present invention, the addressing device includes: a first laser light-emitting device; a second laser light-emitting device; and the aforementioned erbium-doped tellurium germanate microcrystalline glass, wherein the addressing point is located inside the erbium-doped tellurium germanate microcrystalline glass. Thus, the addressing device has a simple and uncomplicated structure, is easy to operate, and accurately locates the addressing point, enabling dynamic three-dimensional display. Those skilled in the art will understand that the addressing device possesses all the features and advantages of the aforementioned erbium-doped tellurium germanate microcrystalline glass, which will not be elaborated upon further here.

[0014] In another aspect, the present invention provides a method for addressing using the aforementioned addressing device. According to an embodiment of the present invention, the method for addressing using the aforementioned addressing device includes: emitting a first laser using a first laser light-emitting device, the first laser irradiating an erbium-doped tellurium germanate microcrystalline glass; emitting a second laser using a second laser light-emitting device, the second laser irradiating the erbium-doped tellurium germanate microcrystalline glass; the erbium-doped tellurium germanate microcrystalline glass at the intersection point of the first laser and the second laser emits light of a predetermined color, and the intersection point is the addressing point. Therefore, the addressing method is simple, easy to implement, and has high addressing accuracy and speed. Attached Figure Description

[0015] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0016] Figure 1 This is a flowchart of a method for preparing erbium ion-doped tellurium germanate microcrystalline glass in one embodiment of the present invention;

[0017] Figure 2 This is a schematic diagram of the addressing device in another embodiment of the present invention;

[0018] Figure 3 Er in Embodiment 1 of the present invention 3+ Fluorescence spectra of doped tellurium germanate glass crystals under dual-frequency excitation by the first laser (808 nm) and the second laser (1550 nm);

[0019] Figure 4 Er in Embodiment 1 of the present invention 3+ Fluorescence spectra of doped tellurium germanate microcrystalline glass under dual-frequency excitation by the first laser (850 nm) and the second laser (1550 nm);

[0020] Figure 5 Er in Embodiment 1 of the present invention 3+ Tg-DSC test results for doped tellurium germanate microcrystalline glass;

[0021] Figure 6 Er in Embodiment 2 of the present invention 3+ Fluorescence spectra of doped tellurium germanate microcrystalline glass under dual-frequency excitation by the first laser (850 nm) and the second laser (1550 nm);

[0022] Figure 7 Er in Embodiment 3 of the present invention 3+ Fluorescence spectra of doped tellurium germanate microcrystalline glass under dual-frequency excitation by the first laser (850 nm) and the second laser (1550 nm);

[0023] Figure 8 Er in Embodiment 4 of the present invention 3+ Fluorescence spectra of doped tellurium germanate microcrystalline glass under dual-frequency excitation by the first laser (850 nm) and the second laser (1550 nm);

[0024] Figure 9 Er in Embodiment 5 of the present invention 3+ Fluorescence spectra of doped tellurium germanate microcrystalline glass under dual-frequency excitation by the first laser (850 nm) and the second laser (1550 nm);

[0025] Figure 10 Er in Embodiment 3 of the present invention 3+ The light emission image of a tellurium germanate microcrystalline glass excited by two laser beams at 850 nm and 1550 nm. Detailed Implementation

[0026] The present invention will be explained below with reference to embodiments. Those skilled in the art will understand that the following embodiments are for illustrative purposes only and should not be considered as limiting the scope of the invention. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in the field or according to the product instructions. Reagents or instruments whose manufacturers are not specified are all conventional products that can be obtained commercially.

[0027] The present invention will now be described with reference to specific embodiments. It should be noted that these embodiments are merely descriptive and do not limit the present invention in any way.

[0028] In one aspect of the invention, an erbium-doped tellurium germanate microcrystalline glass is provided. According to an embodiment of the invention, the erbium ion (Er) 3+ Erbium-doped tellurium germanate glass-ceramics can emit light of a predetermined color when excited by a first laser and a second laser. The first laser wavelength is 850 nm or 808 nm, and the second laser wavelength is 1550 nm. Therefore, this erbium-doped tellurium germanate glass-ceramics can not only convert light emission under laser excitation, but also emit light of a predetermined color under the combined irradiation of the first and second lasers. That is, tellurium germanate glass-ceramics have excellent dual-frequency conversion light emission characteristics. Dual-frequency excitation addressable functionality is achieved within the tellurium germanate glass-ceramics, thus realizing three-dimensional stereoscopic display. Specifically, the optical path design, combined with various high-speed dynamic stereoscopic image functions processed by computer, enables dynamic three-dimensional display through addressing within the glass-ceramics of this invention.

[0029] In some embodiments of the present invention, germanium oxide partially replaces tellurium dioxide as a network forgery in tellurium germanate glass-ceramics, which can improve the thermal stability of the glass-ceramics and obtain glass-ceramics with a lighter color; tellurium germanate glass has a lower firing temperature and is safer than silicate glass when casting molten glass; tellurium germanate glass-ceramics can resist Er... 3+ Ions provide lower phonon energies and local field structures, which is beneficial for Er. 3+ Ion dual-frequency excitation, through two-step dual-frequency excitation to achieve addressing, enables dynamic three-dimensional display inside tellurium germanate microcrystalline glass.

[0030] In some embodiments of the present invention, the predetermined color light is green light, that is, the erbium ion-doped tellurium germanate microcrystalline glass can emit green light under the excitation of the first laser and the second laser dual-frequency laser.

[0031] According to embodiments of the present invention, the erbium-doped tellurium germanate microcrystalline glass comprises TeO2, ZnO, GeO2, and ErF3. Based on the total molar amount of TeO2, ZnO, GeO2, and ErF3, the erbium-doped tellurium germanate microcrystalline glass comprises: 18% to 80% (e.g., 18%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%) molar percentage of TeO2; and 10% to 40% (e.g., 10%, 13%, 15%, 18%, 20%, 22%, 25%)... The composition comprises 27%, 30%, 32%, 35%, 38%, and 40% molar percentage of ZnO; 1% to 70% (e.g., 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, and 70%) molar percentage of GeO2; and 0.001% to 5% (e.g., 0.001%, 0.01%, 0.1%, 0.5%, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, and 5.0%) molar percentage of ErF3. Therefore, the erbium-doped tellurium germanate glass-ceramics with the above-mentioned proportions can not only emit high-intensity, predetermined color light under the excitation of the first and second lasers, but also simultaneously ensure the good performance and quality of the tellurium germanate glass-ceramics. Among them, if the content of ErF3 is too high, Er 3+ The excitation activity of the ions begins to quench, leading to a decrease in the intensity of the emitted light. Additionally, zinc oxide can act as a network modifier, promoting the formation of tellurium germanate microcrystals and improving their quality. Furthermore, in some embodiments, the erbium-doped tellurium germanate microcrystal further includes a flux, the mass of which is 5% to 10% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3, wherein the flux includes at least one of Li2CO3 and Na2CO3, thus helping to lower the melting point of the microcrystal.

[0032] According to an embodiment of the present invention, the erbium-doped tellurium germanate microcrystalline glass comprises TeO2, ZnO, GeO2, and ErF3. Based on the total molar amount of TeO2, ZnO, GeO2, and ErF3, the erbium-doped tellurium germanate microcrystalline glass comprises: 40%–70% molar percentage of TeO2; 15%–25% molar percentage of ZnO; 8%–40% molar percentage of GeO2; 1%–3% molar percentage of ErF3; and further comprises Li2CO3 and Na2CO3, wherein the mass of Li2CO3 is 2%–4% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3, and the mass of Na2CO3 is 5%–8% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3. Therefore, the erbium-doped tellurium germanate microcrystalline glass with the above-mentioned proportions can emit a predetermined color light with higher intensity under the excitation of a first laser and a second laser, thereby achieving better and faster addressing.

[0033] In another aspect of the invention, the present invention provides a method for preparing the aforementioned erbium ion-doped tellurium germanate microcrystalline glass. According to an embodiment of the invention, referring to… Figure 1 Methods for preparing erbium ion-doped tellurium germanate microcrystalline glass include:

[0034] S100: Weigh appropriate amounts of TeO2, ZnO, GeO2 and erbium salt respectively and mix them evenly. Dry the mixture to obtain a dried mixed raw material.

[0035] In the above steps, the erbium salt can be erbium trifluoride (ErF3), which has good compatibility and stability with tellurium germanate glass-ceramics. As mentioned earlier, the dry mixed raw materials include: 18%–80% molar percentage of TeO2; 10%–40% molar percentage of ZnO; 1%–70% molar percentage of GeO2; and 0.001%–5% molar percentage of ErF3. Furthermore, in some embodiments, the dry mixed raw materials further include a flux, the mass of which is 5%–10% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3. The flux includes at least one of Li2CO3 and Na2CO3, which helps to lower the melting point of the glass-ceramic.

[0036] In some embodiments of the present invention, the drying temperature is 100–400°C (e.g., 100°C, 150°C, 200°C, 250°C, 300°C, 350°C, 400°C), and the drying time is 1–5 hours. Therefore, the above drying conditions can quickly dry the mixture without causing side reactions or melting of the various raw materials in the mixture at the above temperatures.

[0037] In some embodiments of the present invention, the mixture can be pre-ground before drying to obtain a dry mixed raw material with a smaller particle size, thereby making the various raw materials more uniformly mixed and thus improving the performance and quality of the prepared microcrystalline glass.

[0038] S200: The dried mixed raw materials are melted to obtain molten glass.

[0039] In some embodiments of the present invention, the melting temperature is 780–1100°C (e.g., 780°C, 800°C, 850°C, 900°C, 950°C, 1000°C, 1050°C, 1100°C), and the melting time is 10–80 minutes. Under these conditions, various raw materials in the dry mixed raw materials can be melted quickly without causing side reactions.

[0040] S300: The molten glass is poured into a mold to obtain a semi-finished product.

[0041] In the above steps, molten glass can be poured into a preheated mold to form a shape. There are no special requirements for the specific shape of the mold, and those skilled in the art can choose flexibly according to the actual situation. No restrictions are imposed here.

[0042] S400: The semi-finished product is subjected to a first annealing treatment and a second annealing treatment in sequence to obtain erbium ion-doped tellurium germanate microcrystalline glass.

[0043] In some embodiments of the present invention, the temperature of the first annealing treatment is 20–50°C below the phase transition temperature (Tg / °C) of the erbium-doped tellurium germanate glass-ceramic (e.g., the first annealing treatment temperature is Tg-50°C, Tg-40°C, Tg-30°C, or Tg-20°C), and the duration of the first annealing treatment is 1–4 hours. At the above annealing temperatures, internal stress within the glass-ceramic can be eliminated. The phase transition temperature of the erbium-doped tellurium germanate glass-ceramic is approximately 288°C.

[0044] Furthermore, the temperature of the second annealing treatment is greater than or equal to 350°C and less than the crystallization initiation temperature (Tx / °C) of the erbium-doped tellurium germanate glass-ceramic (e.g., the second annealing treatment temperature is 350°C, 360°C, 370°C, 380°C, 390°C, 400°C, 410°C, or 420°C), and the duration of the second annealing treatment is 0.5 to 2 hours. At the above annealing temperatures, annealing microcrystallization of the glass can be achieved, resulting in tellurium germanate glass-ceramic with superior performance. The crystallization initiation temperature of the erbium-doped tellurium germanate glass-ceramic is approximately 440°C.

[0045] In some specific embodiments, the telluride germanate microcrystalline glass obtained after the second annealing treatment is polished. This removes stains and cracks from the surface of the microcrystalline glass, thereby improving its quality.

[0046] According to embodiments of the present invention, the erbium-doped tellurium germanate microcrystalline glass prepared by the above method can not only convert light emission under laser excitation, but also emit light of a predetermined color under the combined irradiation of a first laser and a second laser. That is, the tellurium germanate microcrystalline glass has excellent dual-frequency conversion light emission characteristics. The dual-frequency excitation addressable function is realized within the tellurium germanate microcrystalline glass, thus achieving three-dimensional stereoscopic display. Specifically, the optical path design, combined with various high-speed dynamic stereoscopic image functions processed by computer, enables dynamic three-dimensional display through addressing within the microcrystalline glass of the present invention.

[0047] In another aspect, the present invention provides an addressing device. According to an embodiment of the invention, referring to... Figure 2 The addressing device includes: a first laser light-emitting device 10; a second laser light-emitting device 20; and the aforementioned erbium-doped tellurium germanate microcrystalline glass 30, with the addressing point 40 located inside the erbium-doped tellurium germanate microcrystalline glass 30. Therefore, this addressing device has a simple and uncomplicated structure, is easy to operate, and accurately locates the addressing point, enabling dynamic three-dimensional display. Those skilled in the art will understand that this addressing device possesses all the features and advantages of the aforementioned erbium-doped tellurium germanate microcrystalline glass, which will not be elaborated upon further here.

[0048] According to an embodiment of the present invention, the addressing method using this addressing device is as follows: a first laser light source 10 emits a first laser S1, which irradiates an erbium-doped tellurium-germanium silicate glass 30; a second laser light source 20 emits a second laser S2, which irradiates the erbium-doped tellurium-germanium silicate glass 30; the erbium-doped tellurium-germanium silicate glass 30 at the intersection of the first laser S1 and the second laser S2 emits light of a predetermined color, and the intersection point is the addressing point 40. The erbium-doped tellurium-germanium silicate glass 30 at the intersection of the first and second lasers emits light under the simultaneous excitation of the first and second lasers, allowing for precise and rapid location of the addressing point.

[0049] The first laser wavelength is 850 nm or 808 nm, and the second laser wavelength is 1550 nm. Under the excitation of the first and second lasers at the aforementioned wavelengths, a predetermined color light with strong intensity can be emitted at the addressing point. In some embodiments, the predetermined color light is green light.

[0050] In another aspect, the present invention provides a method for addressing using the aforementioned addressing device, according to an embodiment of the present invention, referring to... Figure 2The addressing method using the aforementioned addressing device includes: emitting a first laser S1 using a first laser light-emitting device 10, which irradiates the erbium-doped tellurium germanate microcrystalline glass 30; emitting a second laser S2 using a second laser light-emitting device 20, which irradiates the erbium-doped tellurium germanate microcrystalline glass 30; and the erbium-doped tellurium germanate microcrystalline glass 30 at the intersection of the first laser S1 and the second laser S2 emits light of a predetermined color, with the intersection point being the addressing point 40. Therefore, the addressing method is simple, easy to implement, and offers high addressing accuracy and speed.

[0051] The first laser wavelength is 850 nm or 808 nm, and the second laser wavelength is 1550 nm. Under the excitation of the first and second lasers at the aforementioned wavelengths, a predetermined color light with strong intensity can be emitted at the addressing point. In some embodiments, the predetermined color light is green light.

[0052] Example

[0053] Example 1

[0054] According to the molar percentage of the microcrystalline glass composition in Table 1, calculate the weight of each component, weigh each raw material component into an agate mortar, grind thoroughly to make the mixture of each material uniformly mixed and then dry to obtain a dry mixed raw material.

[0055] The above-mentioned dry mixed raw materials were placed into a covered platinum crucible and melted in a box furnace at 850°C for 30 minutes to obtain a uniform glass melt without bubbles.

[0056] The molten glass is poured into a preheated mold to obtain a semi-finished product;

[0057] The semi-finished product is quickly transferred into a muffle furnace with a preheated mold, and undergoes a first annealing treatment and a second annealing treatment in sequence to obtain erbium ion-doped tellurium germanate microcrystalline glass. The temperature of the first annealing treatment is 268°C and the time is 4 hours; the temperature of the second annealing treatment is 380°C and the time is 2 hours.

[0058] The erbium-doped tellurium germanate microcrystalline glass was polished, followed by a two-step dual-frequency excitation test. The test results are attached. Figure 3 and Figure 4 As shown. The obtained erbium-doped tellurium germanate microcrystalline glass was subjected to Tg-DSC testing; the test results can be found in the reference image. Figure 5 , Figure 5 The data shows that the phase transition temperature Tg of the erbium ion-doped tellurium germanate microcrystalline glass is 288℃, and the crystallization initiation temperature Tx is 440℃.

[0059] Figure 3 For Er 3+Fluorescence spectra of doped tellurium germanate microcrystalline glass under dual-frequency excitation by the first laser (850nm) and the second laser (1550nm). It can be seen from the figure that the luminescence intensity is mainly concentrated at 546nm as green light. Figure 3 The paper also shows the fluorescence spectrum curves of the erbium-doped tellurium germanate microcrystalline glass under excitation by the first laser or the second laser only. It can be seen that the erbium-doped tellurium germanate microcrystalline glass of the present invention can emit high-intensity green light only under dual-frequency excitation by the first laser (850nm) and the second laser (1550nm).

[0060] Figure 4 For Er 3+ Fluorescence spectra of doped tellurium germanate microcrystalline glass under dual-frequency excitation by the first laser (808nm) and the second laser (1550nm). It can be seen from the figure that the luminescence intensity is mainly concentrated at 540nm as green light. Figure 4 The paper also shows the fluorescence spectrum curves of the erbium-doped tellurium germanate microcrystalline glass under excitation by the first laser or the second laser. It can be seen that the erbium-doped tellurium germanate microcrystalline glass of the present invention can emit high-intensity green light only under dual-frequency excitation by the first laser (808nm) and the second laser (1550nm).

[0061] Examples 2 to 5

[0062] The difference from Example 1 lies in the different composition ratio of the microcrystalline glass, as detailed in Table 1.

[0063] Table 1

[0064]

[0065] Two-step dual-frequency excitation tests were performed on the microcrystalline glass prepared in Examples 2 to 5. The test results are shown in the appendix. Figures 6 to 9 As shown, by Figures 6 to 9 As can be seen, the microcrystalline glass obtained in Examples 2-5 can emit high-intensity green light when excited by two laser beams at 850nm and 1550nm. The emission image of the microcrystalline glass obtained in Example 3 when excited by two laser beams at 850nm and 1550nm can be found in [reference needed]. Figure 10 ,Depend on Figure 10 As can be seen, the microcrystalline glass of the present invention can emit green light when excited by the first or second laser beams, thus enabling addressing functionality.

[0066] As can be seen from the fluorescence spectra of Examples 1-5, the intensity of the green light emitted by the glass-ceramic gradually increases with the increase of Er ion concentration. The light intensity reaches its maximum when the Er ion concentration increases to approximately 0.6 mol%, and then gradually decreases with further increases in Er ion concentration. This indicates that a higher Er ion concentration results in higher Er ion intensity. 3+ The excitation activity of the ions begins to be quenched.

[0067] The terms "first" and "second" used in this document are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature marked "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0068] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0069] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. An erbium-doped tellurium germanate microcrystalline glass, characterized in that, A predetermined color of light can be emitted by being excited by a first laser and a second laser. The wavelength of the first laser is 850 nm or 808 nm, and the wavelength of the second laser is 1550 nm. The raw materials for the erbium ion-doped tellurium germanate microcrystalline glass are composed of TeO2, ZnO, GeO2, ErF3, Li2CO3 and Na2CO3; Based on the total molar amounts of TeO2, ZnO, GeO2, and ErF3, the contents of TeO2, ZnO, GeO2, and ErF3 are as follows: 65%~70% molar percentage of TeO2 20%~25% molar percentage of ZnO, 8%~10% molar percentage of GeO2, ErF3 at a molar percentage of 0.4% to 0.6%; The mass of Li2CO3 is 2% to 4% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3. The mass of Na2CO3 is 5% to 8% of the sum of the masses of TeO2, ZnO, GeO2, and ErF3.

2. The erbium-doped tellurium germanate microcrystalline glass according to claim 1, characterized in that, The predetermined color light is green light.

3. A method for preparing erbium ion-doped tellurium germanate microcrystalline glass according to any one of claims 1 to 2, characterized in that, include: Weigh out appropriate amounts of each raw material and mix them evenly. Dry the mixture to obtain a dried mixed raw material. The dried mixed raw materials are melted to obtain molten glass; The molten glass is poured and molded to obtain a semi-finished product; The semi-finished product is subjected to a first annealing treatment and a second annealing treatment in sequence to obtain the erbium ion-doped tellurium germanate microcrystalline glass.

4. The method according to claim 3, characterized in that, It also includes at least one of the following steps: Prior to the drying process, the mixture is further subjected to a grinding process. The product after the second annealing treatment is then polished.

5. The method according to claim 3 or 4, characterized in that, The drying process is carried out at a temperature of 100~400℃ for 1~5 hours.

6. The method according to claim 3 or 4, characterized in that, The melting treatment temperature is 780~1100℃, and the melting treatment time is 10~80 minutes.

7. The method according to claim 3 or 4, characterized in that, The temperature of the first annealing treatment is 20~50°C below the phase transition temperature of the erbium ion-doped tellurium germanate microcrystalline glass, and the time of the first annealing treatment is 1~4 hours. The temperature of the second annealing treatment is greater than or equal to 350°C and less than the initial crystallization temperature of the erbium ion-doped tellurium germanate microcrystalline glass, and the time of the second annealing treatment is 0.5 to 2 hours.

8. An addressing device, characterized in that, include: First laser-emitting device; Second laser light-emitting device; The erbium-doped tellurium germanate microcrystalline glass according to any one of claims 1 to 2 has an addressing point located inside the erbium-doped tellurium germanate microcrystalline glass.

9. A method for addressing using the addressing device of claim 8, characterized in that, include: A first laser is emitted using a first laser light-emitting device, and the first laser irradiates erbium ion-doped tellurium germanate microcrystalline glass. A second laser is emitted using a second laser light-emitting device, and the second laser irradiates the erbium ion-doped tellurium germanate microcrystalline glass. The erbium-doped tellurium germanate microcrystalline glass at the intersection of the first laser and the second laser emits light of a predetermined color, and the intersection point is the addressing point.

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