An explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip

Abstract

The present invention claims protection for an explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip, specifically belonging to the technical field of explosive-free electronic detonators; the technical problem to be solved is: to provide an improvement in the hardware structure of an explosive-free electronic detonator controlled by a high-voltage analog circuit; the technical solution adopted to solve the technical problem is: one end of the printed circuit board welded to the plasma ignition device is encapsulated in a card waist through a plastic sealing plug; the detonator metal shell is connected to the charge shell as a whole through the card waist, and a detonator charge structure is arranged inside the charge shell; a high-voltage analog circuit integrated chip, an MCU microprocessor chip and a high-voltage energy storage capacitor are welded on the printed circuit board, and a circuit board control port is provided at the other end of the printed circuit board, and the circuit board control port is externally connected to a two-wire control pin line that is remotely connected to the detonator, and the two-wire control pin line is encapsulated in the card port through a sealing plug; the present invention is applied to explosive-free electronic detonators.

Description

Technical Field

[0001] The present invention claims protection for an explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip, and specifically belongs to the technical field of explosive-free electronic detonators. Background Art

[0002] Existing industrial digital electronic detonators at home and abroad all use a "combustion to detonation" mechanism charge structure detonator, in which the electronic detonator uses a low-voltage analog circuit and an 8-bit MCU digital integrated circuit, and the voltage supplied to the industrial digital electronic detonator by the detonator is ≤25V; therefore, the low-voltage analog circuit and the 8-bit MCU digital circuit in the existing industrial digital electronic detonators at home and abroad can only charge the low-voltage small energy storage capacitor, and the electric energy charged by the low-voltage small energy storage capacitor can only discharge and heat in the electric heating wire type electric ignition head or the semiconductor bridge SCB, igniting the flammable gunpowder wrapped in the heating wire or the semiconductor bridge SCB, and then the flame of the burning gunpowder ignites the explosive (LTNR, PbN6, D DNP, NHN) form the initial detonation wave of the "combustion-to-detonation" mechanism, which stimulates the high explosive to produce a strong blast wave output; therefore, low-voltage analog circuits and 8-bit MCU digital circuits can only be used in "electronic detonators with explosive charge structures" of the "combustion-to-detonation" mechanism. The explosives loaded in this type of electronic detonator have extremely high mechanical sensitivity and are generally nickel hydrazine nitrate or dinitrodiazophenol. Electronic detonators filled with the above-mentioned explosives are highly dangerous products. Electronic detonators with explosive charge structures are extremely prone to explosion accidents during daily production, transportation, storage, and use in blasting projects. In order to avoid the design of detonator structures containing explosives, it is necessary to improve the current electronic detonator structure. Summary of the Invention

[0003] In order to overcome the deficiencies in the prior art, the present invention aims to solve the technical problem of providing an improvement in the hardware structure of an explosive-free electronic detonator controlled by a high-voltage analog circuit.

[0004] In order to solve the above technical problems, the present invention adopts the following technical solution: an explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip, comprising a printed circuit board disposed inside a metal shell of the detonator, a plasma ignition device welded to one end of the printed circuit board, and the end of the printed circuit board welded to the plasma ignition device being encapsulated in a card waist via a plastic sealing plug;

[0005] The metal shell of the detonator is connected to the charge shell as a whole through a clamp, and the charge shell is provided with a detonator charge structure inside;

[0006] A high-voltage analog circuit integrated chip, an MCU microprocessor chip, and a high-voltage energy storage capacitor are welded on the printed circuit board. A circuit board control port is provided at the other end of the printed circuit board. The circuit board control port is externally connected to a two-wire control pin line that is remotely connected to the initiator. The two-wire control pin line is encapsulated in the bayonet through a sealing plug.

[0007] The model of the high-voltage analog circuit integrated chip is CRL-100, and the components used inside include:

[0008] Transient suppressor diode TVS, bridge Z1, diodes D1-D4, Zener diodes W1-W2, voltage modulator Wa, transistors T1-T9, resistors R1-R13;

[0009] The circuit structure inside the high voltage analog circuit integrated chip is as follows:

[0010] The VA port of the high voltage analog circuit integrated chip is connected in parallel to one end of a transient suppression diode TVS and then connected to pin 2 of the bridge Z1;

[0011] The VB port of the high voltage analog circuit integrated chip is connected in parallel to the other end of the transient suppression diode TVS and then connected to the 4th pin of the bridge Z1;

[0012] Pin 1 of the bridge Z1 is connected in parallel to the collector of the transistor T2, one end of the resistor R1, and the collector of the transistor T1, and then connected to the VH port of the high-voltage analog circuit integrated chip. The base of the transistor T1 is connected in parallel to the other end of the resistor R1, and then connected to the cathode of the voltage-stabilizing diode W1.

[0013] The emitter of the transistor T1 is connected in parallel to the anode of the diode D1 and then connected to pin 1 of the voltage modulator Wa. Pin 2 of the voltage modulator Wa is connected to the RX port of the high voltage analog circuit integrated chip. Pin 3 of the voltage modulator Wa is connected to one end of the resistor R3.

[0014] The cathode of the diode D1 is connected in parallel to one end of the resistor R4 and then to the collector of the transistor T3. The base of the transistor T3 is connected in parallel to the other end of the resistor R4 and then to the cathode of the voltage-stabilizing diode W2. The emitter of the transistor T3 is connected in parallel to one end of the resistor R5 and the emitter of the transistor T4 and then to the VCC port of the high-voltage analog circuit integrated chip. The other end of the resistor R5 is connected in parallel to the anode of the diode D2 and then to the DHJP port of the high-voltage analog circuit integrated chip.

[0015] The cathode of the diode D2 is connected to the DHJJ port of the high voltage analog circuit integrated chip;

[0016] The base of the transistor T4 is connected in series with a resistor R7 and then connected to the TX port of the high voltage analog circuit integrated chip;

[0017] The base of the transistor T2 is connected in parallel to the collector of the transistor T4 and then connected to one end of the resistor R6; the emitter of the transistor T2 is connected in parallel to one end of the resistor R2 and then connected to the LB port of the high voltage analog circuit integrated chip;

[0018] The three pins of the bridge Z1 are respectively connected in parallel to the anode of the voltage stabilizing diode W1, the other end of the resistor R2, the other end of the resistor R3, the anode of the voltage stabilizing diode W2, the other end of the resistor R6 and then grounded;

[0019] The CHR port of the high-voltage analog circuit integrated chip is connected to the base of the transistor T5, the collector of the transistor T5 is connected to one end of the resistor R9, the other end of the resistor R9 is connected in parallel to one end of the resistor R8 and then connected to the base of the transistor T8, and the emitter of the transistor T8 is connected in parallel to the other end of the resistor R8 and the cathode of the diode D3 and then connected to the VH port of the high-voltage analog circuit integrated chip;

[0020] The anode of the diode D3 is connected to the collector of the transistor T9, the base of the transistor T9 is connected in parallel to one end of the resistor R13 and then to one end of the resistor R11, the collector of the transistor T8 is connected to one end of the resistor R10, and the other end of the resistor R10 is connected to the anode of the diode D4;

[0021] The DISC port of the high voltage analog circuit integrated chip is connected to the base of the transistor T6, and the collector of the transistor T6 is connected to the other end of the resistor R11;

[0022] The FPK port of the high-voltage analog circuit integrated chip is connected to the base of the transistor T7, the collector of the transistor T7 is connected to one end of the resistor R12, the other end of the resistor R12 is connected in parallel to the cathode of the diode D4, the other end of the resistor R13, and the emitter of the transistor T9, and then connected to the CGV+ port of the high-voltage analog circuit integrated chip;

[0023] The emitter of the transistor T5 is connected in parallel to the emitter of the transistor T6 and the emitter of the transistor T7 and then grounded;

[0024] The CGV+ port of the high voltage analog circuit integrated chip is connected in parallel to the VHin port and then connected to the positive electrode of the high voltage energy storage capacitor;

[0025] The Mout port of the high-voltage analog circuit integrated chip is connected to the plasma ignition device.

[0026] The high voltage analog circuit integrated chip is also provided with a high voltage MOSFET tube PM1;

[0027] The gate of the high-voltage MOSFET tube PM1 is connected to the connection line between the collector of the transistor T7 and the resistor R12;

[0028] The drain of the high-voltage MOSFET tube PM1 is connected to the Mout port of the high-voltage analog circuit integrated chip;

[0029] The source of the high-voltage MOSFET tube PM1 is connected to the VHin port of the high-voltage analog circuit integrated chip.

[0030] The high voltage analog circuit integrated chip is also provided with a high voltage MOSFET tube NM1, a transistor T10, resistors R14-R16, and a diode D5; the resistor R14 is provided on the connection line between the collector of the transistor T7 and the resistor R12;

[0031] The gate of the high-voltage MOSFET tube NM1 is connected in parallel to one end of the resistor R16 and then connected to the cathode of the diode D5. The anode of the diode D5 is connected in parallel to one end of the resistor R15 and then connected to the collector of the transistor T10.

[0032] The base of the transistor T10 is connected to the connection line between the resistor R14 and the resistor R12, and the emitter of the transistor T10 is connected to the CGV+ port of the high voltage analog circuit integrated chip;

[0033] The drain of the high-voltage MOSFET tube NM1 is connected to the VHin port of the high-voltage analog circuit integrated chip;

[0034] The other end of the resistor R15 and the other end of the resistor R16 are both grounded.

[0035] The VCC port of the high voltage analog circuit integrated chip is connected to the VCC port of the MCU microprocessor chip;

[0036] The DISC port, CHR port, FPK port, and DHJP port of the high-voltage analog circuit integrated chip are respectively connected to the corresponding I / O ports of the MCU microprocessor chip;

[0037] The RX port of the high voltage analog circuit integrated chip is connected to the RXD port of the MCU microprocessor chip;

[0038] The TX port of the high voltage analog circuit integrated chip is connected to the TXD port of the MCU microprocessor chip;

[0039] The CGV+ port of the high voltage analog circuit integrated chip is connected to the VHin port.

[0040] The plasma ignition device is specifically an insulating plate, with copper foil printed circuits provided on both the front and back sides of the insulating plate. A pair of copper foils are symmetrically provided on both the front and back sides of the plasma ignition device, and a metal pad through-hole is provided at the center of each copper foil. The metal pad through-holes respectively connect the copper foils provided on the front and back sides facing each other into one body.

[0041] A pair of copper foils on the front of the plasma ignition device are connected by bridge foil lines connected by raised electrodes arranged opposite to each other on the inner sides;

[0042] L-shaped foil electrodes are vertically arranged on the inner sides of a pair of copper foils on the front of the plasma ignition device, and the extended ends of the two foil electrodes are arranged oppositely on both sides of the bridge foil line.

[0043] The printed circuit board is specifically a slender circuit board, the end of the printed circuit board connected to the card waist is a narrow end, and the end of the printed circuit board provided with the high-voltage energy storage capacitor is a wide end;

[0044] The plasma ignition device is welded to the narrow strip end of the printed circuit board so that the front surface of the plasma ignition device contacts the detonator charge structure.

[0045] The front and back surfaces of the insulating plate of the plasma ignition device are specifically made into circuits by etching a vacuum metal film;

[0046] Circuit copper foil is provided on both sides of the printed circuit board.

[0047] The VA and VB ports of the high-voltage analog circuit integrated chip are remotely connected to the initiator through a two-wire system pin, and the input voltage Vab of the VA and VB ports of the high-voltage analog circuit integrated chip is ≤150V.

[0048] The high voltage analog circuit integrated chip may be packaged in a DMP16, SOP16, SSOP16, TSSOP16, or QFN32-16 package.

[0049] The beneficial effects of the present invention over the prior art are as follows: the present invention provides a new type of electronic detonator based on the improvement of the circuit structure of the high-voltage analog circuit integrated chip. This type of electronic detonator is used for electronically controlled blasting based on the mechanism of plasma shock wave conversion to detonation. The present invention specifically provides a high-voltage analog circuit integrated chip for an explosive-free electronic detonator. A high-voltage analog circuit integrated chip (CRL-100), an MCU microprocessor chip, a high-voltage energy storage capacitor, and a plasma ignition device are welded on a PCB printed circuit board in the electronic module. The electronic module controls the instantaneous discharge of the high-voltage capacitor in the plasma ignition device to generate a plasma shock wave that directly excites the high explosive to form a strong detonation wave output. The entire process does not require the provision of explosives in the electronic detonator. The present invention improves the structure of the electronic detonator, which can effectively avoid the risks of electronic detonators loaded with explosives during transportation and use, and can effectively improve the control precision and accuracy of the electronic detonator. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] The present invention will be further described below with reference to the accompanying drawings:

[0051] Figure 1 It is a structural schematic diagram of the electronic detonator of the present invention;

[0052] Figure 2 This is an enlarged structural diagram of the front side of the plasma ignition device of the present invention;

[0053] Figure 3 It is a schematic structural diagram of a printed circuit board of the present invention;

[0054] Figure 4 yes Figure 3 Side view of

[0055] Figure 5 This is a wiring diagram of the high voltage analog circuit integrated chip of the present invention;

[0056] Figure 6 It is a packaging diagram of the high voltage analog circuit integrated chip of the present invention;

[0057] Figure 7 This is a schematic diagram of a P-type circuit in a high-voltage analog circuit integrated chip according to embodiment 1 of the present invention;

[0058] Figure 8 This is a schematic diagram of an N-type circuit in a high-voltage analog circuit integrated chip according to embodiment 2 of the present invention;

[0059] In the figure: 100 is the metal shell of the detonator, 101 is the waist, 102 is the bayonet, 200 is the printed circuit board, 300 is the plasma ignition device, 400 is the detonator charge structure, 501 is the charge shell, 500 is the sealing plug, and 600 is the two-wire leg wire;

[0060] 202 is a high-voltage energy storage capacitor, 21 is a high-voltage analog circuit integrated chip, and 22 is an MCU microprocessor chip. DETAILED DESCRIPTION

[0061] The present invention provides an explosive-free electronic detonator controlled by a high-voltage analog circuit, which mainly relates to an explosive-free electronic detonator with a plasma shock wave to detonation mechanism, and adopts a high-voltage analog circuit integrated chip to achieve control; the purpose of the present invention is to provide a high-voltage resistant analog circuit integrated chip in the electronic module of the explosive-free electronic detonator, the high-voltage resistant analog circuit integrated chip is a chip with a high voltage input of ≤150V; the inside of the high-voltage resistant analog circuit integrated chip is an input voltage of ≤150V, a first-level low voltage ≤24V voltage stabilizing circuit, a second-level low voltage ≤24V voltage stabilizing circuit, and a second-level low voltage ≤24V voltage stabilizing circuit. The four parts of the chip are integrated and packaged into an all-in-one chip, namely, a low-voltage 3.2-4.2V voltage-stabilizing circuit, a voltage and current modulation communication circuit, and a high-voltage ≤150V MOSFET switch control drive circuit. The high-voltage digital integrated chip is mainly used in electronic detonators without explosives, which can generate a strong blast wave by discharging the electric energy stored in a high-voltage energy storage capacitor in a plasma ignition device, and directly stimulate high explosives to form a strong blast wave output. The electronic module circuit in the electronic detonator without explosives is connected to the detonator via a foot line (D-Bus), and the maximum voltage of the detonator power supply is ≤150V.

[0062] In order to achieve the above purpose, the following technical solutions are adopted:

[0063] The present invention provides a high-voltage analog circuit integrated chip, comprising: a first-stage low-voltage ≤24V voltage stabilizing circuit, a second-stage 3.2-4.2V voltage stabilizing circuit, a voltage and current modulation circuit, and a high-voltage MOSFET switch control drive circuit; the power supply voltage Vab of the high-voltage analog circuit integrated chip is a maximum voltage Vab ≤150V provided by an initiator via a field two-wire bus (D-Bus).

[0064] The electronic module in the explosive-free electronic detonator comprises four parts: a high-voltage analog circuit integrated chip, an MCU microprocessor chip, a high-voltage energy storage capacitor, and a plasma ignition device, which are integrated and plastic-sealed to form the electronic module of the explosive-free electronic detonator.

[0065] The electronic detonator without explosive comprises: a metal shell of the detonator 100, a printed circuit board 200, a plasma ignition device 300, a detonator charge structure 400, a clamping waist 101, a bayonet 102, and a two-wire leg wire 600; see the attached Figure 1 As shown;

[0066] The printed circuit board 200 is a double-sided copper foil printed circuit board; a high voltage analog circuit integrated chip 21, an MCU microprocessor chip 22, a high voltage energy storage capacitor 202 are welded on the printed circuit board 200, and a plasma ignition device 300 is welded on one side. Figures 2 to 4 shown.

[0067] Among them, the components set inside the high-voltage analog circuit integrated chip (CRL-100) mainly include: a P-type circuit composed of a transient suppression diode TVS, a bridge Z1, diodes D1-D4, Zener diodes W1-W2, a voltage modulator Wa (RLR-4), transistors T1-T9, a high-voltage P-type MOSFET tube PM1, and resistors R1-R13; or include: an N-type circuit composed of a transient suppression diode TVS, a bridge Z1, diodes D1-D5, Zener diodes W1-W2, a voltage modulator Wa (RLR-4), transistors T1-T10, a high-voltage N-type MOSFET tube NM1, and resistors R1-R16.

[0068] See attached Figure 5 FIG. 1 is a block diagram of a circuit principle of an electronic module of an explosive-free electronic detonator according to an embodiment of the present invention, comprising: a high-voltage analog circuit integrated chip 21 of the present invention, an MCU microprocessor chip 22, a high-voltage energy storage capacitor 202, and a plasma igniter 300; the high-voltage analog circuit integrated chip 21 of the present invention is a dedicated high-voltage analog circuit integrated chip in the electronic module of the explosive-free electronic detonator; the MCU microprocessor chip 22 can be an 8-bit 51 series or RiSC series microprocessor;

[0069] The current and voltage modulation TX and RX ports in the high voltage analog circuit integrated chip 21 are connected to the TXD and RXD serial communication ports of the MCU microprocessor chip 22; the DISC, CHR, FPK, and DHJP ports in the high voltage analog circuit integrated chip 21 are connected to the four input and output I / O ports in the MCU microprocessor chip 22; the 3.2-4.2V low voltage regulated output VCC port in the high voltage analog circuit integrated chip 21 is connected to the power supply VCC port in the MCU microprocessor chip 22; the CGV+ port in the high voltage analog circuit integrated chip 21 is connected to the power supply VCC port in the MCU microprocessor chip 22. The VHin port is connected to the positive electrode of the high-voltage capacitor Cg, and the negative electrode of the high-voltage capacitor Cg is connected to the GND port. One end of the plasma ignition device is connected to the Mout port in the high-voltage analog circuit integrated chip 21, and the other end of the plasma ignition device is connected to the GND port in the high-voltage analog circuit integrated chip 21. The VA and VB ports in the high-voltage analog circuit integrated chip 21 are connected to the two-wire pin interface. The two-wire pin (D-Bus) is connected to the initiator. The maximum voltage Vab provided by the initiator between VA and VB through the two-wire pin is ≤150V.

[0070] Example 1

[0071] See attached Figure 7As shown, the internal P-type circuit schematic diagram of the high-voltage analog circuit integrated chip 21 of Example 1 of the present invention includes: a transient suppression diode TVS, a bridge Z1, diodes D1-D4, a voltage regulator diode W1-W2, a voltage modulator Wa (RLR-4), transistors T1-T9, a high-voltage P-type MOSFET PM1, and resistors R1-R13; the transient suppression diode TVS is connected to the voltage input VA and VB chip ports, and is connected to the input end of the bridge Z1, the output positive electrode of the bridge Z1 is connected to the chip VH port, and the output of the bridge Z1 is connected to the VH port of the chip. The negative electrode is connected to the GND port of the chip; the output positive electrode of the bridge Z1 is connected to the collector of the transistor T1, the base is connected to the cathode of the voltage regulator W1, the resistor R1 is connected between the collector and base of the transistor T1, the anode of the voltage regulator W1 is connected to GND, and the emitter output of the transistor T1 forms a first-level low voltage ≤ 24V voltage regulator circuit; the 1st end of the voltage modulator Wa (RLR-4) is connected to the emitter of the transistor T1, the 2nd end of the voltage modulator Wa (RLR-4) is connected to the RX port of the chip, and the 3rd end of the voltage modulator Wa (RLR-4) is connected to the One end of the resistor R3, the other end of the resistor R3 is connected to the GND port of the chip; the collector and base of the transistor T3 are connected to the resistor R4, the base of the transistor T3 is connected to the cathode of the voltage regulator W2, the anode of the voltage regulator W2 is connected to GND, and the emitter output of the transistor T3 is connected to the VCC port of the chip, and a second-level low voltage 3.2-4.2V voltage regulator circuit is formed; the transistor T2, the transistor T4, the resistor R2, R6, and R7 form a current modulation circuit, the base of the transistor T4 is connected to one end of the resistor R7, and the other end of the resistor R7 is connected to the chip The TX port of the chip, the emitter of the transistor T4 is connected to the VCC terminal, the collector of the transistor T4 is connected to one end of the resistor R6 and the base of the transistor T2, the other end of the resistor R6 is connected to GND, the emitter of the transistor T2 is connected to one end of the resistor R2 and the LB port of the chip, the other end of the resistor R2 is connected to GND, and the collector of the transistor T2 is connected to the positive electrode of the bridge Z1; the emitter of the transistor T3 is connected to one end of the resistor R5, the other end of the resistor R5 is connected to the DHJP port of the chip, and is connected to the DHJJ port of the chip through the diode D2.

[0072] The transistors T5, T8, diode D4, resistors R8, R9, and R10 are interconnected to form a high-voltage capacitor Cg charging control circuit. The base of the transistor T5 is connected to the CHR port of the chip. The positive pole of the internal bridge Z1 of the chip's high-voltage output port VH is connected to the emitter of the transistor T8. The collector of the transistor T8 is connected to the CGV+ port of the chip through the resistor R10 and the diode D4. The resistor R8 is connected between the emitter and base of the transistor T8. The base of the transistor T8 is connected to the collector of the transistor T5 through the resistor R9. The emitter of the transistor T5 is connected to GND. The transistors T6, T9, diode D3, resistors R11, and R13 are interconnected to form a high-voltage capacitor Cg voltage discharge control circuit. The base of the transistor T6 is connected to the DISC port of the chip. The emitter of the transistor T6 is connected to GND. The collector is connected to the base of the transistor T9 through a resistor R11, a resistor R13 is connected between the base and emitter of the transistor T9, the emitter of the transistor T9 is connected to the CGV+ port of the chip, and the collector of the transistor T9 is connected to the positive electrode of the internal bridge Z1 of the chip VH port through a diode D3; the transistor T7, the high-voltage and high-power P-type MOSFET tube PM1, and the resistor R12 are interconnected to form a high-power switch control circuit, the base of the transistor T7 is connected to the FPK port of the chip, the emitter of the transistor T7 is connected to GND, the collector of the transistor T7 is connected to the CGV+ port of the chip through the resistor R12, the S pole of the P-type MOSFET tube PM1 is connected to the VHin port of the chip, the collector of the transistor T7 is connected to the G pole of the P-type MOSFET tube PM1, and the D pole of the P-type MOSFET tube PM1 is connected to the Mout port of the chip.

[0073] Example 2

[0074] See attached Figure 8As shown, the internal N-type circuit schematic diagram of the high voltage analog circuit integrated chip 21 of embodiment 2 of the present invention includes: transient suppression diode TVS, bridge Z1, diodes D1-D5, voltage regulator diodes W1-W2, voltage modulator Wa (RLR-4), transistors T1-T10, high voltage N-type MOSFET tube NM1, and resistors R1-R16; the internal N-type circuit schematic diagram of the high voltage analog circuit integrated chip 21 of embodiment 2 is basically the same as the internal P-type circuit schematic diagram of the high voltage analog circuit integrated chip 21 of embodiment 1, the difference is that the N-type circuit schematic diagram uses a high voltage N-type MOSFET tube NM1 and adds a transistor T10, a diode D 5. Three resistors R14-R16; a resistor R12 is connected between the emitter and base of the transistor T10, the emitter of the transistor T10 is connected to the CGV+ port of the chip, the base of the transistor T10 is connected to the collector of the transistor T7 through the resistor R14, the collector of the transistor T10 is connected to GND through the resistor R15, the collector of the transistor T10 is connected to the G pole of the N-type MOSFET tube NM1 through the diode D5, the G pole of the N-type MOSFET tube NM1 is connected to GND through the resistor R16, the D pole of the N-type MOSFET tube NM1 is connected to the VHin port of the chip, and the S pole of the N-type MOSFET tube NM1 is connected to the Mout port of the chip.

[0075] See attached Figure 6 As shown, it is a packaging diagram of the high voltage analog circuit integrated chip 21 of embodiments 1 and 2 of the present invention, and its packaging form is DMP16; the packaging form of the high voltage analog circuit integrated chip 21 can also be SOP16, SSOP16, TSSOP16, QFN32-16.

[0076] The technical solutions of the present invention are described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the scope of protection of the present invention; the above is only a preferred embodiment of the present invention and is not intended to limit the present invention; for those skilled in the art, the present invention can have various changes and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip, comprising a printed circuit board (200) disposed inside a metal shell (100) of the detonator, wherein a plasma ignition device (300) is welded to one end of the printed circuit board (200), and characterized in that: One end of the printed circuit board (200) welded to the plasma ignition device (300) is sealed in the card waist (101) via a plastic sealing plug; The detonator metal shell (100) is connected to the charge shell (501) as a whole via a clamp (101), and a detonator charge structure (400) is provided inside the charge shell (501); A high-voltage analog circuit integrated chip (21), an MCU microprocessor chip (22), and a high-voltage energy storage capacitor (202) are welded on the printed circuit board (200); a circuit board control port is provided at the other end of the printed circuit board (200); the circuit board control port is externally connected to a two-wire control foot line (600) for remote connection with the detonator; the two-wire control foot line (600) is encapsulated in the bayonet (102) through a sealing plug (500); The model of the high voltage analog circuit integrated chip (21) is CRL-100, and the components used inside include: Transient suppressor diode TVS, bridge Z1, diodes D1-D4, Zener diodes W1-W2, voltage modulator Wa, transistors T1-T9, resistors R1-R13; The circuit structure inside the high voltage analog circuit integrated chip (21) is: The VA port of the high voltage analog circuit integrated chip (21) is connected in parallel to one end of a transient suppression diode TVS and then to pin 2 of the bridge Z1; The VB port of the high voltage analog circuit integrated chip (21) is connected in parallel to the other end of the transient suppression diode TVS and then connected to the 4th pin of the bridge Z1; Pin 1 of the bridge Z1 is connected in parallel to the collector of the transistor T2, one end of the resistor R1, and the collector of the transistor T1, and then connected to the VH port of the high-voltage analog circuit integrated chip (21); the base of the transistor T1 is connected in parallel to the other end of the resistor R1, and then connected to the negative electrode of the voltage-stabilizing diode W1; The emitter of the transistor T1 is connected in parallel to the anode of the diode D1 and then connected to pin 1 of the voltage modulator Wa, the pin 2 of the voltage modulator Wa is connected to the RX port of the high voltage analog circuit integrated chip (21), and the pin 3 of the voltage modulator Wa is connected to one end of the resistor R3; The cathode of the diode D1 is connected in parallel to one end of the resistor R4 and then to the collector of the transistor T3; the base of the transistor T3 is connected in parallel to the other end of the resistor R4 and then to the cathode of the voltage-stabilizing diode W2; the emitter of the transistor T3 is connected in parallel to one end of the resistor R5 and the emitter of the transistor T4 and then to the VCC port of the high-voltage analog circuit integrated chip (21); the other end of the resistor R5 is connected in parallel to the anode of the diode D2 and then to the DHJP port of the high-voltage analog circuit integrated chip (21); The cathode of the diode D2 is connected to the DHJJ port of the high voltage analog circuit integrated chip (21); The base of the transistor T4 is connected in series with a resistor R7 and then connected to the TX port of the high voltage analog circuit integrated chip (21); The base of the transistor T2 is connected in parallel to the collector of the transistor T4 and then connected to one end of the resistor R6; the emitter of the transistor T2 is connected in parallel to one end of the resistor R2 and then connected to the LB port of the high-voltage analog circuit integrated chip (21); The three pins of the bridge Z1 are respectively connected in parallel to the anode of the voltage stabilizing diode W1, the other end of the resistor R2, the other end of the resistor R3, the anode of the voltage stabilizing diode W2, the other end of the resistor R6 and then grounded; The CHR port of the high-voltage analog circuit integrated chip (21) is connected to the base of the transistor T5, the collector of the transistor T5 is connected to one end of the resistor R9, the other end of the resistor R9 is connected in parallel to one end of the resistor R8 and then connected to the base of the transistor T8, and the emitter of the transistor T8 is connected in parallel to the other end of the resistor R8 and the cathode of the diode D3 and then connected to the VH port of the high-voltage analog circuit integrated chip (21); The anode of the diode D3 is connected to the collector of the transistor T9, the base of the transistor T9 is connected in parallel to one end of the resistor R13 and then to one end of the resistor R11, the collector of the transistor T8 is connected to one end of the resistor R10, and the other end of the resistor R10 is connected to the anode of the diode D4; The DISC port of the high-voltage analog circuit integrated chip (21) is connected to the base of the transistor T6, and the collector of the transistor T6 is connected to the other end of the resistor R11; The FPK port of the high-voltage analog circuit integrated chip (21) is connected to the base of the transistor T7, the collector of the transistor T7 is connected to one end of the resistor R12, and the other end of the resistor R12 is connected in parallel to the cathode of the diode D4, the other end of the resistor R13, and the emitter of the transistor T9, and then connected to the CGV+ port of the high-voltage analog circuit integrated chip (21); The emitter of the transistor T5 is connected in parallel to the emitter of the transistor T6 and the emitter of the transistor T7 and then grounded; The CGV+ port of the high-voltage analog circuit integrated chip (21) is connected in parallel to the VHin port and then to the positive electrode of the high-voltage energy storage capacitor (202); The Mout port of the high-voltage analog circuit integrated chip (21) is connected to the plasma ignition device (300).

2. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 1, characterized in that: The high-voltage analog circuit integrated chip (21) is further provided with a high-voltage MOSFET tube PM1; The gate of the high-voltage MOSFET tube PM1 is connected to the connection line between the collector of the transistor T7 and the resistor R12; The drain of the high-voltage MOSFET tube PM1 is connected to the Mout port of the high-voltage analog circuit integrated chip (21); The source of the high-voltage MOSFET tube PM1 is connected to the VHin port of the high-voltage analog circuit integrated chip (21).

3. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 1, characterized in that: The high-voltage analog circuit integrated chip (21) is further provided with a high-voltage MOSFET tube NM1, a transistor T10, resistors R14-R16, and a diode D5; the resistor R14 is provided on the line connecting the collector of the transistor T7 and the resistor R12; The gate of the high-voltage MOSFET tube NM1 is connected in parallel to one end of the resistor R16 and then connected to the cathode of the diode D5. The anode of the diode D5 is connected in parallel to one end of the resistor R15 and then connected to the collector of the transistor T10. The base of the transistor T10 is connected to the connection line between the resistor R14 and the resistor R12, and the emitter of the transistor T10 is connected to the CGV+ port of the high voltage analog circuit integrated chip (21); The drain of the high-voltage MOSFET tube NM1 is connected to the VHin port of the high-voltage analog circuit integrated chip (21); The other end of the resistor R15 and the other end of the resistor R16 are both grounded.

4. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 2 or 3, characterized in that: The VCC port of the high-voltage analog circuit integrated chip (21) is connected to the VCC port of the MCU microprocessor chip (22); The DISC port, CHR port, FPK port, and DHJP port of the high-voltage analog circuit integrated chip (21) are respectively connected to corresponding I / O ports of the MCU microprocessor chip (22); The RX port of the high-voltage analog circuit integrated chip (21) is connected to the RXD port of the MCU microprocessor chip (22); The TX port of the high-voltage analog circuit integrated chip (21) is connected to the TXD port of the MCU microprocessor chip (22); The CGV+ port of the high-voltage analog circuit integrated chip (21) is connected to the VHin port.

5. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 1, characterized in that: The plasma ignition device (300) is specifically an insulating plate, with copper foil printed circuits provided on both the front and back sides of the insulating plate, and a pair of copper foils symmetrically provided on both the front and back sides of the plasma ignition device (300), with a metal pad through-hole provided at the center of each copper foil, and the metal pad through-holes respectively connect the copper foils provided on the front and back sides facing each other into one body; A pair of copper foils on the front of the plasma ignition device (300) are connected via bridge foil lines connected by raised electrodes arranged opposite to each other on the inner sides; L-shaped foil electrodes are vertically arranged on the inner sides of a pair of copper foils on the front of the plasma ignition device (300), and the extended ends of the two foil electrodes are arranged oppositely on both sides of the bridge foil line.

6. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 5, characterized in that: The printed circuit board (200) is specifically a slender circuit board, the end of the printed circuit board (200) connected to the card waist (101) is a narrow end, and the end of the printed circuit board (200) provided with the high-voltage energy storage capacitor (202) is a wide end; The plasma ignition device (300) is welded to the narrow end of the printed circuit board (200), so that the front surface of the plasma ignition device (300) is in contact with the detonator charge structure (400).

7. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 1, characterized in that: The front and back surfaces of the insulating plate of the plasma ignition device (300) are specifically made into circuits by etching a vacuum metal film; Circuit copper foil is provided on both sides of the printed circuit board (200).

8. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 1, characterized in that: The VA and VB ports of the high-voltage analog circuit integrated chip (21) are remotely connected to the initiator via a two-wire foot line (600), and the input voltage Vab of the VA and VB ports of the high-voltage analog circuit integrated chip (21) is ≤150V.

9. The explosive-free electronic detonator controlled by a high-voltage analog circuit integrated chip according to claim 1, characterized in that: The high voltage analog circuit integrated chip (21) is packaged in a form of DMP16, SOP16, SSOP16, TSSOP16, or QFN32-16.

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