Quartz pendulum structure and processing method thereof

Abstract

The application relates to the field of micro-electro-mechanical system micro-processing technology and discloses a quartz pendulum piece structure and a processing method thereof. The quartz pendulum piece structure comprises a cantilever beam, a mass block, a frame and a plurality of bosses. The processing method comprises the following steps: firstly, wet etching is performed on a fused quartz substrate to form a plurality of bosses in regions other than the plurality of bosses; secondly, according to the pattern of the quartz pendulum piece structure, an ultrafast laser cutting process is adopted to process the fused quartz substrate, so as to form a cutting channel penetrating through the fused quartz substrate; thirdly, a fused quartz etching mask layer is prepared on the front and back surfaces of the fused quartz substrate; then, the fused quartz substrate in the cantilever beam region is etched to form the cantilever beam; and finally, the fused quartz substrate is etched by wet etching to separate the mass block and the frame. The quartz pendulum piece structure formed through the processing can not only ensure that the cantilever beam is thin and the side wall is steep, but also can greatly reduce the spacing between the frame and the mass block, so that the processing requirement of the high-depth-width gap between the mass block and the frame can be met.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of micro-electro-mechanical system (MEMS) microfabrication technology, and in particular to a quartz pendulum structure and a processing method thereof. BACKGROUND

[0002] A quartz flexible accelerometer is a high-precision sensor for measuring acceleration and is a key component of modern inertial navigation systems and high-precision measurement systems, and has been widely used in the fields of aerospace, oil exploration, etc. The quartz pendulum is the core part of the quartz flexible accelerometer, and the processing quality of the quartz pendulum will directly affect the performance of the accelerometer. The current processing of the quartz pendulum adopts a single manufacturing method, and the processing process is as follows: generally, carbon dioxide laser cutting is used for forming, then a specific mold is used to etch and thin the flexible beam and process the step under the rubber mask, and finally a metal film is plated on the surface. This method uses a rubber mask, the etching depth of the quartz is large, and there is no etching pinhole on the surface, but the single processing method has low efficiency and poor consistency, and the carbon dioxide laser cutting has large thermal stress and poor processing precision.

[0003] Currently, the MEMS technology has developed rapidly, and it has high processing precision, can be mass-produced, and has good product consistency. CN111847847A discloses a wafer-level quartz pendulum preparation method based on wet etching, which can solve the problems of low production efficiency, low precision and poor quality stability of the existing quartz pendulum to some extent, but this method has the following shortcomings: 1) before etching the flexible beam, the C-shaped groove between the pendulum tongue and the frame is etched to form a deep groove, thereby making the photoetching before etching the flexible beam more difficult; 2) the quartz pendulum manufactured by this method has a large gap between the pendulum tongue and the frame, i.e., the depth-width ratio of the gap is small (<1:1), which cannot meet the processing requirements of a small gap (for example, a gap width < substrate thickness - cantilever beam thickness) between the pendulum tongue and the frame. SUMMARY

[0004] To solve the above technical problems, the present application provides a processing method of a quartz pendulum structure and a quartz pendulum structure obtained by the processing method.

[0005] In one aspect, the present application provides a processing method of a quartz pendulum structure, the quartz pendulum structure comprising a cantilever beam, a mass block, a frame and a plurality of bosses, the plurality of bosses being arranged on the frame, the mass block being connected to the frame through the cantilever beam, and the mass block and the frame having a gap therebetween. The processing method comprises the following steps:

[0006] S01: cleaning a fused quartz substrate and preparing a fused quartz etching mask layer on the front and back surfaces of the fused quartz substrate;

[0007] S02: coating photoresist on the fused quartz etching mask layer, exposing the fused quartz etching mask layer in the area other than the plurality of bosses by photoetching;

[0008] S03: removing the fused quartz etching mask layer in the area other than the plurality of bosses to expose the fused quartz substrate;

[0009] S04: etching the fused quartz substrate in the area other than the plurality of bosses to form the plurality of bosses by using etching solution;

[0010] S05: removing the photoresist and the fused quartz etching mask layer remaining on the fused quartz substrate;

[0011] S06: processing the fused quartz substrate by using ultrafast laser cutting according to the pattern of the quartz pendulum structure to form the through cutting channel on the fused quartz substrate, the cutting channel including the first cutting channel between the mass and the frame;

[0012] S07: cleaning the fused quartz substrate and preparing the fused quartz etching mask layer on the front and back surfaces of the fused quartz substrate;

[0013] S08: coating photoresist on the fused quartz etching mask layer, exposing the fused quartz etching mask layer in the area of the cantilever beam by photoetching;

[0014] S09: removing the fused quartz etching mask layer in the area of the cantilever beam to expose the fused quartz substrate;

[0015] S10: etching the fused quartz substrate in the area of the cantilever beam to form the cantilever beam by using etching solution;

[0016] S11: removing the photoresist and the fused quartz etching mask layer remaining on the fused quartz substrate;

[0017] S12: etching the fused quartz substrate by using etching solution to increase the width of the first cutting channel and separate the mass and the frame.

[0018] Further, the quartz pendulum structure further includes a first through hole arranged in the middle of the cantilever beam; the cutting channel further includes a second cutting channel arranged in the area of the cantilever beam; in step S10, the etching solution is used to etch the fused quartz substrate in the area of the cantilever beam, and the width of the second cutting channel is also increased to separate the fused quartz substrate inside the second cutting channel from the cantilever beam and form the first through hole.

[0019] Further, the quartz pendulum structure further includes a second through hole arranged in the middle of the mass; the cutting channel further includes a third cutting channel arranged in the area of the cantilever beam; in step S12, the etching solution is used to etch the fused quartz substrate, and the width of the third cutting channel is also increased to separate the fused quartz substrate inside the third cutting channel from the mass and form the second through hole.

[0020] Further, the cutting channel further comprises a fourth cutting channel, the fourth cutting channel defining an outer contour of the quartz pendulum structure; in step S12, etching the fused quartz substrate by using the etching solution further causes the width of the fourth cutting channel to increase, and separates the fused quartz substrate from the quartz pendulum structure.

[0021] Further, the width of the cutting channel is less than 5 μm.

[0022] Optionally, the etching solution is a HF solution or an ammonium hydrogen fluoride solution. In step S12, the etching solution is a HF solution with a concentration of 49%, and the fused quartz substrate is etched at an etching temperature of 22℃ for 15-25 minutes. Optionally, the fused quartz etching mask layer is any one of a silicon nitride film, polycrystalline silicon, amorphous silicon, a Cr / Au film, or a Cr / Au / Cr / Au film. Preferably, the thickness of the fused quartz etching mask layer is 0.2-1 μm. Preferably, the thickness of the photoresist is 3-10 μm.

[0023] In another aspect, the present application provides a quartz pendulum structure, which is manufactured by the manufacturing method of the first aspect.

[0024] The features and advantages of the present disclosure include:

[0025] The manufacturing method of the quartz pendulum structure provided by the present application adopts a combined manufacturing method of fusion ultrafast laser processing and wet etching, first etches the fused quartz substrate by wet etching to form a boss, then cuts and processes the fused quartz substrate according to the pattern of the quartz pendulum structure by using an ultrafast laser to form a cutting channel that penetrates through the fused quartz substrate; then prepares a fused quartz etching mask layer on the front and back surfaces of the fused quartz substrate; then performs photoetching on the cantilever beam area and wet etching on the cantilever area to obtain a smooth thin beam (cantilever beam); and finally separates the mass block from the frame. The quartz pendulum structure manufactured by the foregoing manufacturing method can not only ensure that the cantilever beam is thin and the sidewall is steep, but also greatly reduce the distance between the frame and the mass block, and can meet the processing requirements of the high and deep width gap between the mass block and the frame. Moreover, the manufacturing method can save the use of the fused quartz substrate, save costs, and reduce the volume of the quartz pendulum structure. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and for those skilled in the art, other drawings can also be obtained from these drawings without creative labor.

[0027] Figure 1 is a schematic view of the quartz pendulum structure provided by the present application;

[0028] Figures 2A-2Eis a processing flow diagram of the present application.

[0029] Explanation of reference signs:

[0030] 100-quartz pendulum structure, 11-tum, 12-cantilever beam, 13-mass block, 14-frame, 15-gap, 16-first through hole, 17-second through hole;

[0031] 200-fused quartz substrate, 21-first cutting channel, 22-second cutting channel, 23-third cutting channel, 24-fourth cutting channel;

[0032] 300-semi-finished product A structure, 310-recessed area;

[0033] 400-semi-finished product B structure;

[0034] 500-semi-finished product C structure;

[0035] 600-semi-finished product D structure. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present disclosure will be described clearly and completely below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present disclosure.

[0037] Reference Figure 1 The quartz pendulum structure 100 in the quartz flexible accelerometer includes a cantilever beam 12, a mass block 13, a frame 14, and a plurality of tum 11, the plurality of tum 11 is arranged on the frame 14, the mass block 13 is connected with the frame 14 through the cantilever beam 12, and the mass block 13 and the frame 14 have a gap 15 therebetween. The height of the tum 11 defines the size of the capacitive gap of the accelerometer, and the height of the tum 11 protruding from the frame 14 is generally 15-23 μm. The plurality of tum 11 is symmetrically distributed along the pendulum axis of the mass block 13. The shapes of the frame 14 and the mass block 13 can be any shape, which is determined according to the processing requirement. For example, the shape of the frame 14 is a circular ring or substantially a circular ring, and the shape of the mass block 13 is a circle, an ellipse, a sector, or a rectangle, etc. The thickness of the cantilever beam 12 is usually only a few tens of microns, which is much smaller than the thickness of the mass block 13 and the frame 14. The cantilever beam 12 can be constructed as a cantilever straight beam, a folded beam, a spiral beam, etc., without limitation. In terms of quantity, a single or multiple cantilever beams 12 can be arranged to support the mass block 13. In some embodiments, the center of the mass block 13 is provided with a center hole, which is constructed to be symmetrical along the pendulum axis of the mass block 13.

[0038] The following will be described in detail taking the quartz pendulum structure 100 with two cantilever beams 12 and the center of the mass block 13 provided with a center hole as an example. Specifically, referring to Figure 1 The hole provided between the two cantilever beams 12 is a first through hole 16, and the center hole of the mass block 13 is a second through hole 17. The shapes of the first through hole 16 and the second through hole 17 are determined according to the processing requirements and can be round holes, square holes, etc. In the embodiment, the first through hole 16 is a square hole, and the second through hole 17 is a round hole. The two cantilever beams 12 are symmetrically arranged relative to the swing axis of the mass block 13.

[0039] The present application provides a processing method of a quartz pendulum structure, which adopts a composite processing method combining ultrafast laser processing and wet etching. First, a wet etching method is used to form a boss on a fused quartz substrate, and then an ultrafast laser cutting method is used to process the fused quartz substrate according to the pattern of the quartz pendulum structure to form a cutting channel penetrating up and down on the fused quartz substrate. Then, a fused quartz etching mask layer is prepared on the front and back surfaces of the fused quartz substrate. Then, the cantilever beam area is photoetched, and the cantilever area is wet etched to obtain a smooth thin beam (cantilever beam). Finally, the mass block and the frame are separated.

[0040] The thickness of the fused quartz substrate 200 is 400-1000 um, and the size can be 2.5 inches, 8 inches, 12 inches or other sizes. The following will be described in detail taking the fused quartz substrate 200 with a thickness of 400 um as an example. Specifically, referring to Figures 2A-2E The processing method of the quartz pendulum structure provided by the present application comprises the following steps:

[0041] S01: After cleaning the fused quartz substrate 200, a fused quartz etching mask layer is prepared on the front and back surfaces of the fused quartz substrate 200. The fused quartz etching mask layer plays a role of isolation and protection, and the fused quartz covered with the fused quartz etching mask layer can avoid being corroded by the etching liquid. The thickness of the fused quartz etching mask layer 40 is 0.2-1 um, and preferably 0.5 um. The fused quartz etching mask layer can be any one of silicon nitride film, polycrystalline silicon, amorphous silicon, Cr / Au film or Cr / Au / Cr / Au. For example, after cleaning the fused quartz substrate with a mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 4:1, Cr and Au films are sequentially plated on the front and back surfaces of the fused quartz substrate to prepare a Cr / Au film.

[0042] S02: A double-sided photoetching method is used to first coat a photoresist on the fused quartz etching mask layer, then photoetch the area other than the plurality of bosses 11 to expose the fused quartz etching mask layer of the area, and form a first photoetching pattern meeting the processing requirements. The thickness of the photoresist 50 is 3-10 um, and preferably 7 um. For example: after coating a 7 um photoresist on the Cr / Au film, exposing and developing, a part of the photoresist is imidized by ultraviolet light to form a first photoetching pattern meeting the processing requirements.

[0043] S03: Using photoresist as a protective layer, remove the fused quartz etching mask layer in the area other than the plurality of protrusions 11 to expose the fused quartz substrate in the area, forming a first etching pattern area (the area other than the plurality of protrusions 11). Specifically, use the etching solution that can corrode the fused quartz etching mask layer in S01 to remove the fused quartz etching mask layer, for example, when the fused quartz etching mask layer in S01 is Cr / Au film, use gold and chromium etching solution to etch Au film and Cr film in turn, and remove the exposed Cr / Au film after lithography.

[0044] S04: Referring to Figure 2A , use etching solution to etch the fused quartz substrate in the first etching pattern area (the area other than the plurality of protrusions 11), so that the area forms a recessed area 310, and the area not etched by the etching solution forms a plurality of protrusions 11 that meet the processing requirements, obtaining a semi-finished product A structure 300. The etching solution can use HF solution, ammonium hydrogen fluoride solution or etching solution containing HF. For example, use HF solution with a concentration of 49% to etch the exposed fused quartz substrate at an etching temperature of 22°C to form a 20 μm protrusion 11.

[0045] S05: Remove the remaining photoresist and fused quartz etching mask layer on the fused quartz substrate to expose the fused quartz substrate. Specifically, first remove the photoresist on the fused quartz substrate, and then use gold and chromium etching solution to etch Au film and Cr film in turn to expose the entire fused quartz substrate.

[0046] S06: Referring to Figure 2BAccording to the pattern of the quartz pendulum structure, the fused quartz substrate 200 is processed by using the ultrafast laser to form the upper and lower through cutting channels on the fused quartz substrate 200, and a semi-finished product B structure 400 is obtained. The upper and lower through refers to penetrating from the upper surface of the fused quartz substrate 200 to the lower surface of the fused quartz substrate 200; the number and shape of the cutting channels are determined according to the processing requirements. In this embodiment, the cutting channels include a first cutting channel 21, a second cutting channel 22, a third cutting channel 23, and a fourth cutting channel 24. The first cutting channel 21 is generally C-shaped, and is finally used to separate the mass block 13 and the frame 14, release the mass block 13 into a movable structure, and enable the mass block 13 to move relative to the frame 14 under the action of acceleration; the second cutting channel 22 is rectangular, the fused quartz substrate inside the second cutting channel 22 is a region to be removed, and after the fused quartz substrate inside the second cutting channel 22 is removed, a first through hole 16 is formed; the third cutting channel 23 is circular, the fused quartz substrate inside the third cutting channel 23 is a region to be removed, and after the fused quartz substrate inside the third cutting channel 23 is removed, a second through hole 17 is formed; the fourth cutting channel 24 defines the outer contour of the quartz pendulum structure, the fourth cutting channel 24 is circular, and is finally used to separate the quartz pendulum structure 100 and the fused quartz substrate 200. In some embodiments, the two ends of the first cutting channel 21 are also respectively provided with annular cutting channels (for example, triangular annular cutting channels), which are finally used to separate the side surface of the cantilever beam 12 and the frame 14, and are beneficial to the swing of the mass block 13.

[0047] Specifically, in some embodiments, the fused quartz substrate 200 with a thickness of 400 μm is cut by using the ultrafast laser. After cutting, the upper and lower through cutting channels are formed on the fused quartz substrate 200, the cutting gap is small (slit), and the width of the cutting channel is less than 5 μm. The fused quartz substrate 200 is cut by using the ultrafast laser, the cutting efficiency is high, and the width of the cutting channel formed is narrow and the cutting surface is steep. After the upper and lower through cutting channels are formed on the fused quartz substrate 200 by using the ultrafast laser, the fused quartz substrate on both sides of the cutting channel is not completely separated, that is, the inner side region of the cutting channel and the outer side region of the cutting channel are not completely separated, which is beneficial to subsequent overall processing.

[0048] S07: After cleaning the fused quartz substrate 200, a fused quartz etching mask layer is prepared on the front and back surfaces of the fused quartz substrate 200. The specific method of this step can be referred to step S01.

[0049] S08: using double-sided photolithography method, first coating photoresist on the fused quartz etching mask layer, then photolithography cantilever beam 12 and the first through hole 16 area to expose the fused quartz etching mask layer in this area, forming the second lithography pattern in accordance with the processing requirements. The specific method of this step can be referred to step S02. It needs to be added that step S08 and subsequent step S09, step S10, can not be processed in the first through hole 16 area. The first through hole 16 area can be placed in step S12.

[0050] S09: using photoresist as a protective layer, removing the fused quartz etching mask layer of the cantilever beam 12 and the first through hole 16 area to expose the fused quartz substrate in this area, forming a second etching pattern area (cantilever beam 12 and first through hole 16). The specific method of this step can be referred to step S03.

[0051] S10: reference Figure 2C , using etching solution to etch the fused quartz substrate of the second etching pattern area (cantilever beam 12 and first through hole 16) to form the cantilever beam 12 and the first through hole 16 in accordance with the processing requirements, to get the semi-finished product C structure 500. Etching solution can use HF solution, ammonium hydrogen fluoride solution or etching liquid containing HF. Specifically, for example: using 49% concentration of HF solution, under the condition of etching temperature of 22℃, etching the exposed fused quartz substrate, thinning the fused quartz substrate in the cantilever beam 12 area to form a 50um cantilever beam. In this process, the etching solution makes the width of the second cutting channel 22 larger, separates the fused quartz substrate inside the second cutting channel 22 from the cantilever beam 12 outside the second cutting channel 22, and forms the first through hole 16.

[0052] S11: reference Figure 2D , removing the remaining photoresist and fused quartz etching mask layer on the fused quartz substrate 200 to expose the fused quartz substrate, to get semi-finished product D structure 600. Specifically, first remove the photoresist on the fused quartz substrate, then use gold, chromium etching solution to etch Au film, Cr film in turn, to expose the whole fused quartz substrate.

[0053] S12: reference Figure 2EThe etching liquid can be HF solution, ammonium hydrogen fluoride solution or etching liquid containing HF. For example, the inside of the first cutting channel 21 and the fourth cutting channel 24 can be separated from the outside of the fused quartz substrate by using 49% HF solution to etch the fused quartz substrate for 20 minutes at an etching temperature of 22°C. It should be noted that the etching of the third cutting channel 23 and the fourth cutting channel 24 can also be placed in other steps, for example, simultaneously with the step of etching the cantilever beam. The etching of the fourth cutting channel 24 in step S12 is beneficial to the processing of multiple quartz pendulum plate structures 100 on the fused quartz substrate 200.

[0054] The processing method of the quartz pendulum plate structure provided by the application adopts a composite processing method combining ultrafast laser processing and wet etching. The fused quartz substrate is first etched by wet etching to form a boss, then the fused quartz substrate is cut and processed by ultrafast laser cutting according to the pattern of the quartz pendulum plate structure to form a cutting channel that penetrates up and down on the fused quartz substrate, and then the fused quartz substrate is etched by wet etching to form a cantilever beam. Finally, the mass block and the frame are separated, and the quartz pendulum plate structure and the fused quartz substrate are separated.

[0055] The cutting channel formed by cutting the fused quartz substrate by ultrafast laser cutting is a narrow gap with a very small gap and a steep side wall. Under the etching action of the etching liquid, the cutting channel is widened in a short time to separate the fused quartz substrate on both sides of the cutting channel. In addition, although the wet etching process for forming the cantilever beam takes a long time in step S10, the cutting channel is protected by the fused quartz etching mask layer to avoid being etched by the etching liquid during the etching of the cantilever beam. Therefore, the quartz pendulum plate structure processed by the foregoing processing method can not only ensure that the cantilever beam is thin and the side wall is steep, but also can greatly reduce the distance between the frame and the mass block, which can meet the processing requirements of small gap (i.e. the depth-width ratio of the gap is large) between the mass block and the frame, for example, the depth-width ratio of the gap 15 between the mass block 13 and the frame 14 can be greater than 20:1, for example, 22:1, 24:1, etc. Moreover, the use of fused quartz substrate can be saved, the cost can be saved, and the volume of the quartz pendulum plate can be reduced.

[0056] The application further provides a quartz pendulum structure manufactured based on the above processing method, the quartz pendulum structure 100 comprises a cantilever beam 12, a mass block 13, a frame 14, and a plurality of bosses 11, the plurality of bosses 11 are arranged on the frame 14, the mass block 13 is connected with the frame 14 through the cantilever beam 12, and a gap 15 is arranged between the mass block 13 and the frame 14. According to different processing requirements, the quartz pendulum structure with any gap in the range of 1:1-25:1 of the depth-width ratio can be obtained. The depth-width ratio of the gap between the mass block 13 and the frame 14 can be freely selected according to the processing requirements, and the depth-width ratio of the gap can be adjusted by adjusting the etching time of step S12, the longer the etching time of step S12, the smaller the depth-width ratio of the gap.

[0057] The above merely describes several embodiments of the present disclosure, and those skilled in the art can make various modifications or changes to the embodiments of the present disclosure according to the disclosed content of the application without departing from the spirit and scope of the present disclosure.

Claims

1. A method for processing a quartz pendulum structure, the quartz pendulum structure comprising a cantilever beam, a mass block, a frame, and a plurality of bosses, the plurality of bosses being provided on the frame, the mass block being connected with the frame through the cantilever beam, and a gap being provided between the mass block and the frame, characterized in that, The method comprises the following steps: S01: cleaning a fused quartz substrate, and preparing a fused quartz etching mask layer on both sides of the fused quartz substrate; S02: coating a photoresist on the fused quartz etching mask layer, and exposing the fused quartz etching mask layer in a region other than the plurality of bosses by photoetching; S03: removing the fused quartz etching mask layer in the region other than the plurality of bosses to expose the fused quartz substrate; S04: etching the fused quartz substrate in the region other than the plurality of bosses by using an etching solution to form the plurality of bosses; S05: removing the photoresist and the fused quartz etching mask layer remaining on the fused quartz substrate; S06: forming a through cutting channel on the fused quartz substrate by using an ultrafast laser cutting according to a pattern of the quartz pendulum piece structure, the width of the cutting channel is less than 5 μm, and the cutting channel comprises a first cutting channel between the mass block and the frame; S07: cleaning the fused quartz substrate, and preparing a fused quartz etching mask layer on both sides of the fused quartz substrate; S08: coating a photoresist on the fused quartz etching mask layer, and exposing the fused quartz etching mask layer in a cantilever beam region by photoetching; S09: removing the fused quartz etching mask layer in the cantilever beam region to expose the fused quartz substrate; S10: etching the fused quartz substrate in the cantilever beam region by using an etching solution to form the cantilever beam; S11: removing the photoresist and the fused quartz etching mask layer remaining on the fused quartz substrate; S12: etching the fused quartz substrate by using an etching solution to increase the width of the first cutting channel, and separating the mass block and the frame.

2. The method of processing a quartz balance structure according to claim 1, wherein The quartz pendulum piece structure further comprises a first through hole arranged in a middle portion of the cantilever beam, and the cutting channel further comprises a second cutting channel arranged in the cantilever beam region; In step S10, the fused quartz substrate in the cantilever beam region is etched by using the etching solution, the width of the second cutting channel is also increased, the fused quartz substrate inside the second cutting channel is separated from the cantilever beam, and the first through hole is formed.

3. The method of processing a quartz balance structure according to claim 2, wherein The quartz pendulum piece structure further comprises a second through hole arranged in a middle portion of the mass block, and the cutting channel further comprises a third cutting channel arranged in the cantilever beam region; In step S12, the fused quartz substrate is etched by using the etching solution, the width of the third cutting channel is also increased, the fused quartz substrate inside the third cutting channel is separated from the mass block, and the second through hole is formed.

4. The method of processing a quartz balance structure according to claim 3, wherein The cutting channel further comprises a fourth cutting channel, and the fourth cutting channel defines the outer contour of the quartz pendulum piece structure; In step S12, the fused quartz substrate is etched by using the etching solution, the width of the fourth cutting channel is also increased, and the quartz pendulum piece structure is separated from the fused quartz substrate.

5. The method of processing a quartz balance structure according to claim 1, wherein The etching solution is an HF solution or an ammonium hydrogen fluoride solution.

6. The method of processing a quartz balance structure according to claim 5, wherein In step S12, the etching solution is an HF acid solution with a concentration of 49%, the fused quartz substrate is etched at an etching temperature of 22 ℃ for 15-25 minutes.

7. The method of processing a quartz balance structure according to claim 1, wherein The fused quartz etching mask layer is any one of a silicon nitride film, polysilicon, amorphous silicon, a Cr / Au film or a Cr / Au / Cr / Au film, and the thickness of the fused quartz etching mask layer is 0.2-1 μm.

8. The method of processing a quartz balance structure according to claim 1, wherein The thickness of the photoresist is 3-10 μm.

9. A quartz balance structure, characterized by, The processing method is made by any one of claims 1-8.

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