Imide structure photosensitive developing resin, preparation method and application thereof

Abstract

This invention belongs to the field of polymer materials technology, specifically relating to an imide-structured photosensitive developing resin, its preparation method, and its application. The raw material composition, by weight, includes: 2-6 parts polyamine, 6-20 parts dicarboxylic acid anhydride, 1-6 parts unsaturated monocarboxylic acid, 0.02-0.08 parts polymerization inhibitor, 0.02-0.08 parts catalyst, 2-10 parts hydrogen peroxide, 2-6 parts saturated sodium bicarbonate solution, 1-5 parts diethyl ether, 3-10 parts formic acid, 50-70 parts N-methylpyrrolidone, and 2-8 parts anhydrous zinc acetate. In this invention, the polyamine is first reacted with an alicyclic acid anhydride containing double bonds to generate a polyimide structure with double bonds at the end groups. The double bonds are then epoxidized, followed by ring-opening esterification with an unsaturated monocarboxylic acid, and then modified with an anhydride to introduce carboxyl groups, ultimately obtaining the imide-structured photosensitive developing resin. This resin has excellent electrical properties, heat resistance, good dimensional stability, excellent adhesion, and low dielectric constant, making it suitable for preparing IC substrate inks, printed circuit board solder resist inks, or chip photoresists.

Description

Technical Field

[0001] This invention belongs to the field of polymer materials technology, specifically relating to an imide-structured photosensitive developing resin, its preparation method, and its application. Background Technology

[0002] IC carrier board technology originated in Japan in the 1980s and has a history of over 30 years. Initially coexisting with integrated IC packaging technology, it is now the standard for high-end ICs, serving as a precision connection between the core chip and the conventional printed circuit board (PCB). IC carrier boards are made from copper-clad laminates through processes such as photolithography, solder resist photosensitive development, and gold plating, differing from traditional PCB copper-clad laminates in several ways. First, the substrate used in IC carrier copper-clad laminates differs from the epoxy / glass fiber composite material used in traditional copper-clad laminates. Instead, it primarily uses BT resin, ABF insulating film (Ajinomoto Build-up Film), and MIS polymer as the copper-clad laminate (film) substrate. Second, IC carrier board manufacturing begins with a special copper-clad laminate (film), and the subsequent etching and solder resist photosensitive development processes require more precise technical requirements than conventional PCB manufacturing. This means higher etching and solder resist development resolution, with linewidth typically controlled within tens of micrometers. Thirdly, as a permanent, finely protective thin-layer material, solder resist photosensitive developing ink on IC substrates requires stringent heat resistance, resistance to thermal expansion, hardness, scratch resistance, and impact resistance. In some applications, the solder resist layer even needs a low dielectric constant to meet the requirements of high-frequency communication. Fourthly, most post-processing of IC substrates uses chemical gold plating (industrially known as electroless gold plating) rather than electroplating. Electroless gold plating solutions are generally highly acidic or alkaline, which requires the IC substrate solder resist layer to have high resistance to electroless gold plating (i.e., corrosion resistance) to avoid defects such as discoloration, deformation, and easy peeling. Therefore, compared to traditional PCB solder resist inks, IC substrate solder resist inks have more stringent requirements in terms of developing resolution, developing quality, resistance to thermal expansion, and resistance to electroless gold plating. The key technology of IC substrate solder resist inks lies in the photosensitive developing resin and the photoinitiation system. Therefore, it is necessary to improve the relevant performance indicators of the photosensitive developing resin to meet the requirements of IC substrates. Summary of the Invention

[0003] The first objective of this invention is to provide an imide-structured photosensitive developing resin; the second objective of this invention is to provide a method for preparing the photosensitive developing resin; and the third objective of this invention is to provide applications of the photosensitive developing resin.

[0004] According to a first aspect of the present invention, an imide-structured photosensitive developing resin is provided, comprising, by weight, the following raw materials: 2-6 parts of polyamine, 6-20 parts of dicarboxylic anhydride, 1-6 parts of unsaturated monocarboxylic acid, 0.02-0.08 parts of polymerization inhibitor, 0.02-0.08 parts of catalyst, 2-10 parts of hydrogen peroxide, 2-6 parts of saturated sodium bicarbonate solution, 1-5 parts of diethyl ether, 3-10 parts of formic acid, 50-70 parts of N-methylpyrrolidone, and 2-8 parts of anhydrous zinc acetate.

[0005] In some embodiments, the polyamine is selected from one or more of 4,4'-diaminodicyclohexylmethane, 1,4-cyclohexanedimethylamine, 1,3-cyclohexanedimethylamine, 4,4'-(p-dimethylamino)diphenylmethane, isofluranediamine, 1,8-octanediamine, polyoxyethylenediamine, and 2,4,6-triaminopyrimidine. Imide-structured photosensitive developing resins derived from chain polyamines exhibit improved toughness and film-forming properties; imide-structured photosensitive developing resins derived from alicyclic polyamines tend to be more rigid and tough, offering a better balance of properties; imide-structured photosensitive developing resins derived from aromatic polyamines tend to be more rigid and brittle, with less than ideal solubility and film-forming properties. Therefore, a combination of these three is generally required to balance their performance.

[0006] In some embodiments, the dicarboxylic acid anhydride is selected from one or more of tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride.

[0007] In some embodiments, the unsaturated monocarboxylic acid is selected from one or more of acrylic acid, methacrylic acid, and butenoic acid.

[0008] In some embodiments, the polymerization inhibitor is selected from at least one of hydroquinone, p-tert-butylcatechol, and catechol.

[0009] In some embodiments, the catalyst is selected from one or more of benzyltriethylammonium chloride, benzyldiamine, triethylamine, diethylamine, and triphenylphosphine.

[0010] According to a second aspect of the present invention, a method for preparing the above-described imide-structured photosensitive developing resin is provided, comprising the following steps:

[0011] S1. Mix 40-60% of the total amount of dicarboxylic acid anhydride, polyamine, anhydrous zinc acetate, 20-30% of the total amount of polymerization inhibitor, and N-methylpyrrolidone. Heat to 70-80℃ and stir for 0.5-2h in a nitrogen atmosphere, then heat to 140-160℃ and stir continuously for 15-18h. After the reaction is complete, cool the reaction solution to 20-35℃, filter and wash with anhydrous ethanol. Dry the product and grind it to obtain bismaleimide solid powder.

[0012] S2. Mix the bismaleimide solid powder obtained in step S1 with formic acid and stir at 50-60℃ for 1-3 hours. Then add hydrogen peroxide and continue the reaction for 3-5 hours. After the reaction is complete, add saturated sodium bicarbonate solution and diethyl ether to the reaction product, shake evenly and let stand to separate the layers. Separate the organic layer, wash the organic layer with water 2-3 times, remove the diethyl ether by rotary evaporation, add anhydrous magnesium sulfate and dry overnight, then filter to remove magnesium sulfate to obtain the product.

[0013] S3. Mix the product obtained in step S2 with the remaining polymerization inhibitor and catalyst, heat the system to 90-100℃, then add the unsaturated monocarboxylic acid, and after the addition is complete, heat the system to 110-120℃ and continue the reaction for 2-3 hours. After the reaction is complete, lower the temperature of the reaction system to 70-90℃, then add the remaining dicarboxylic acid anhydride and react for 6-8 hours to obtain the final product.

[0014] In step S1, anhydrous zinc acetate is used to adsorb the water generated in the reaction, and N-methylpyrrolidone is used as a solvent.

[0015] In step S1, a staged heating method is adopted to ensure that all reaction materials are mixed evenly at a lower temperature (70-80℃) to avoid localized explosive polymerization during the subsequent high-temperature (140-160℃) reaction.

[0016] In step S2, the main function of formic acid is to provide a weakly acidic environment to enhance the oxidizing power of hydrogen peroxide.

[0017] In step S2, the role of diethyl ether is to provide the organic phase during extraction.

[0018] In step S3, the main reaction raw materials are mixed evenly with the polymerization inhibitor and catalyst, and then the temperature is raised to 90-100℃. At this time, unsaturated monocarboxylic acid is added, which makes it less likely to undergo self-polymerization. After stirring evenly, the temperature is raised to 110-120℃ to further prevent the unsaturated monocarboxylic acid from undergoing explosive polymerization.

[0019] This invention introduces an imide structure into the main photosensitive developing resin, further enhancing the resin's functionality by grafting onto the resulting polyimide. The invention first reacts a polyamine with an alicyclic anhydride containing double bonds to generate a polyimide structure with terminal double bonds. The double bonds are then epoxidized, followed by ring-opening esterification with an unsaturated monocarboxylic acid, and finally modified with an anhydride to introduce carboxyl groups, ultimately obtaining a photosensitive developing resin with an imide structure. This resin exhibits excellent electrical properties, good heat resistance, good dimensional stability, excellent adhesion, and a relatively low dielectric constant.

[0020] When the dicarboxylic acid anhydride is tetrahydrophthalic anhydride, the polyamine is 1,3-cyclohexanedimethylamine, and the unsaturated monocarboxylic acid is acrylic acid, the schematic diagram of the synthetic route of this invention is as follows: Figure 1 As shown.

[0021] In some embodiments, in step S1, the product is dried in a vacuum oven at 50°C for 4-6 hours and then ground to obtain bismaleimide solid powder.

[0022] In some implementations, in step S2, hydrogen peroxide needs to be added slowly, with the addition time controlled at 2-4 hours.

[0023] In some implementations, the stirring speed is 600-800 rpm.

[0024] According to a third aspect of the present invention, the application of the above-described imide-structured photosensitive and developing resin in the preparation of IC substrate solder resist ink, printed circuit board solder resist ink, or chip photoresist is provided.

[0025] According to a fourth aspect of the present invention, a dry film is provided, which is obtained by photocuring or thermal curing with the above-described imide-structured photosensitive developing resin.

[0026] In some embodiments, an imide-structured photosensitive developing resin is printed onto a carrier and baked at 70-80°C for 20-30 minutes to obtain a dry film.

[0027] According to a fifth aspect of the present invention, the application of the above-described dry film in the preparation of IC substrates or printed circuit boards is provided.

[0028] The beneficial effects of this invention include:

[0029] The photosensitive developing resin with an imide structure of the present invention has a low molecular weight. The low molecular weight polyimide oligomer structure can make the cured film obtained after resin curing have a high glass transition temperature and low thermal expansion performance. At the same time, because the large number of imide structures become polyimide cured films after double bond cross-linking and curing, it has excellent heat resistance, thermal expansion resistance and dimensional stability, which can meet the stringent requirements of IC substrate solder resist ink for line width accuracy and thermal deformation resistance. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of the synthesis route in Embodiment 1 of the present invention. Detailed Implementation

[0031] The present invention will now be described in further detail. It is worth noting that the following embodiments are merely for better explanation of the invention and do not limit the scope of protection of the invention. Process steps not disclosed in the embodiments are prior art. Unless otherwise specified, all raw materials are commercially available.

[0032] In the following examples, the stirring speed is 600 rpm.

[0033] Example 1

[0034] The preparation method of the imide-structured photosensitive developing resin in this embodiment includes the following steps:

[0035] (1) 50.00 g tetrahydrophthalic anhydride, 46.74 g 1,3-cyclohexanedimethylamine, 60.30 g anhydrous zinc acetate, 0.16 g hydroquinone, and 1.00 L N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 °C and stirred for half an hour under a nitrogen atmosphere, and then heated to 150 °C and stirred continuously for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed three times with anhydrous ethanol. The product was dried in a vacuum oven at 50 °C for 4 hours and ground to obtain bismaleimide solid powder.

[0036] (2) Add 29.35g of bismaleimide solid powder and 75.85g of formic acid obtained in step (1) to a three-necked flask, stir at 50°C for 2 hours, and then slowly add 48.89g of hydrogen peroxide dropwise over a period of about 3 hours. After the addition is complete, continue the reaction for 5 hours. After the reaction is complete, pour the reaction product into a separatory funnel, add 50g of saturated sodium bicarbonate solution and 25g of diethyl ether, shake well and let stand to separate the layers. After separating the organic layer, wash the organic layer three times with distilled water. Then pour the washed product into a beaker, remove the diethyl ether by rotary evaporation, add 30g of anhydrous magnesium sulfate and dry overnight. After that, filter to remove the magnesium sulfate and obtain the dried product.

[0037] (3) Add 31.32g of the dried product obtained in step (2) to another three-necked flask, then add 0.48g of hydroquinone and 0.32g of benzyltriethylammonium chloride, heat the system to 90℃, then add 28.53g of acrylic acid dropwise to the three-necked flask, and after the addition is complete, heat the system to 110℃ and continue the reaction for 2.5h. After the reaction is complete, lower the temperature of the reaction system to 80℃, then add 60.23g of tetrahydrophthalic anhydride, and react for 6h to obtain the product.

[0038] Example 2

[0039] The preparation method of the imide-structured photosensitive developing resin in this embodiment includes the following steps:

[0040] (1) 50.00 g tetrahydrophthalic anhydride, 46.23 g 1,8-octanediamine, 60.30 g anhydrous zinc acetate, 0.16 g hydroquinone, and 1.00 L N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 °C and stirred for half an hour under a nitrogen atmosphere, and then heated to 150 °C and stirred continuously for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed three times with anhydrous ethanol. The product was dried in a vacuum oven at 50 °C for 4 hours and ground to obtain bismaleimide solid powder.

[0041] (2) Add 29.35g of bismaleimide solid powder and 75.85g of formic acid obtained in step (1) to a three-necked flask, stir at 50°C for 2 hours, and then slowly add 48.89g of hydrogen peroxide dropwise over a period of about 3 hours. After the addition is complete, continue the reaction for 5 hours. After the reaction is complete, pour the reaction product into a separatory funnel, add 50g of saturated sodium bicarbonate solution and 25g of diethyl ether, shake well and let stand to separate the layers. After separating the organic layer, wash the organic layer three times with distilled water. Then pour the washed product into a beaker, remove the diethyl ether by rotary evaporation, add 30g of anhydrous magnesium sulfate and dry overnight. After that, filter to remove the magnesium sulfate and obtain the dried product.

[0042] (3) Add 31.32g of the dried product obtained in step (2) to another three-necked flask, then add 0.48g of hydroquinone and 0.32g of benzyltriethylammonium chloride, heat the system to 90℃, then add 28.53g of acrylic acid dropwise to the three-necked flask, and after the addition is complete, heat the system to 110℃ and continue the reaction for 2.5h. After the reaction is complete, lower the temperature of the reaction system to 80℃, then add 60.23g of tetrahydrophthalic anhydride, and react for 6h to obtain the product.

[0043] Example 3

[0044] The preparation method of the imide-structured photosensitive developing resin in this embodiment includes the following steps:

[0045] (1) 50.00 g tetrahydrophthalic anhydride, 41.23 g polyoxyethylene diamine, 60.30 g anhydrous zinc acetate, 0.16 g hydroquinone and 1.00 L N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 °C and stirred for half an hour in a nitrogen atmosphere, and then heated to 150 °C and stirred continuously for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50 °C for 4 hours and ground to obtain bismaleimide solid powder.

[0046] (2) Add 27.74 g of bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid to a three-necked flask, stir at 50 °C for 2 h, and then slowly add 48.89 g of hydrogen peroxide dropwise over a period of about 3 h. After the addition is complete, continue the reaction for 5 h. After the reaction is complete, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of diethyl ether. Shake well and let stand to separate the layers. After separating the organic layer, wash the organic layer three times with distilled water. Then pour the washed product into a beaker, remove the diethyl ether by rotary evaporation, and then add 30 g of anhydrous magnesium sulfate and dry overnight. After that, filter to remove the magnesium sulfate and obtain the dried product.

[0047] (3) Add 31.32g of the dried product obtained in step (2) to another three-necked flask, then add 0.48g of hydroquinone and 0.32g of benzyltriethylammonium chloride, heat the system to 90℃, then add 28.53g of acrylic acid dropwise to the three-necked flask, and after the addition is complete, heat the system to 110℃ and continue the reaction for 2.5h. After the reaction is complete, lower the temperature of the reaction system to 80℃, then add 60.23g of tetrahydrophthalic anhydride, and react for 6h to obtain the product.

[0048] Example 4

[0049] The preparation method of the imide-structured photosensitive developing resin in this embodiment includes the following steps:

[0050] (1) 50.00 g tetrahydrophthalic anhydride, 23.37 g 1,3-cyclohexanedimethylamine, 20.62 g polyoxyethylene diamine, 60.30 g anhydrous zinc acetate, 0.16 g hydroquinone, and 1.00 L N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 °C and stirred for half an hour under a nitrogen atmosphere, and then heated to 150 °C and stirred continuously for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50 °C for 4 hours and ground to obtain bismaleimide solid powder.

[0051] (2) Add 28.79 g of bismaleimide solid powder and 75.85 g of formic acid obtained in step (1) to a three-necked flask, stir at 50 °C for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise over a period of about 3 h. After the addition is complete, continue the reaction for 5 h. After the reaction is complete, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of diethyl ether. Shake well and let stand to separate the layers. Separate the organic layer and wash the organic layer three times with distilled water. Then pour the washed product into a beaker, remove the diethyl ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight. After that, filter to remove the magnesium sulfate and obtain the dried product.

[0052] (3) Add 31.32g of the dried product obtained in step (2) to another three-necked flask, then add 0.48g of hydroquinone and 0.32g of benzyltriethylammonium chloride, heat the system to 90℃, then add 28.53g of acrylic acid dropwise to the three-necked flask, and after the addition is complete, heat the system to 110℃ and continue the reaction for 2.5h. After the reaction is complete, lower the temperature of the reaction system to 80℃, then add 60.23g of tetrahydrophthalic anhydride, and react for 6h to obtain the product.

[0053] Example 5

[0054] The preparation method of the imide-structured photosensitive developing resin in this embodiment includes the following steps:

[0055] (1) 50.00 g tetrahydrophthalic anhydride, 23.37 g 1,3-cyclohexanedimethylamine, 23.12 g 1,8-octanediamine, 60.30 g anhydrous zinc acetate, 0.16 g hydroquinone, and 1.00 L N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 °C and stirred for half an hour under a nitrogen atmosphere, and then heated to 150 °C and stirred continuously for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered, and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50 °C for 4 hours and ground to obtain bismaleimide solid powder.

[0056] (2) Add 29.78 g of bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid to a three-necked flask, stir at 50 °C for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise over a period of about 3 h. After the addition is complete, continue the reaction for 5 h. After the reaction is complete, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of diethyl ether. Shake well and let stand to separate the layers. Separate the organic layer and wash the organic layer three times with distilled water. Then pour the washed product into a beaker, remove the diethyl ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight. After that, filter to remove the magnesium sulfate and obtain the dried product.

[0057] (3) Add 31.32g of the dried product obtained in step (2) to another three-necked flask, then add 0.48g of hydroquinone and 0.32g of benzyltriethylammonium chloride, heat the system to 90℃, then add 28.53g of acrylic acid dropwise to the three-necked flask, and after the addition is complete, heat the system to 110℃ and continue the reaction for 2.5h. After the reaction is complete, lower the temperature of the reaction system to 80℃, then add 60.23g of tetrahydrophthalic anhydride, and react for 6h to obtain the product.

[0058] The performance of the imide-structured photosensitive and developing resins prepared in Examples 1-5 is tested below. The test methods are as follows:

[0059] (1) Photosensitivity: The imide structure photosensitive developing resin is printed on the copper-clad laminate and baked at 75°C for 20 minutes. A 21-level light gradient ruler is placed above the film layer and exposed and developed under an LED light source exposure machine. The time when 7 grids remain in the film layer is used as the standard.

[0060] (2) Minimum line spacing and line width: Tested according to GB / T 29846-2013 Method for photolithography resist of electroplating for printed circuit boards.

[0061] (3) Etching resistance: The etching resistance is tested according to the method of photo-imaging electroplating resist for printed circuit boards in GB / T 29846-2013. The best is when the pattern is complete after etching, the line edges are neat, and there is no wrinkling, peeling or jagged shape. The good is when there is wrinkling but no peeling, and the poor is when peeling.

[0062] (4) Electroplating resistance: The electroplating resistance is tested according to the method of photo-imaging electroplating resist for printed circuit boards in GB / T 29846-2013. The best is when there is no plating penetration, bubbles or peeling in the pattern after electroplating; the good is when there is plating penetration but no peeling; and the poor is when peeling.

[0063] (5) Removal property: The test sample was placed in a 3 wt% NaOH aqueous solution at 50℃ and the removal property was observed. The best performance was that the film was completely removed without any residue within 60s, the good performance was that the film was completely removed without any residue within 60-120s, and the poor performance was that the film was removed without any residue after 120s.

[0064] The test results are shown in Table 1.

[0065] Table 1 Performance test results of imide-structured photosensitive developing resins in Examples 1-5

[0066]

[0067] As can be seen from Table 1, the imide-structured photosensitive and developing resin of the present invention has excellent properties such as photosensitivity, etching resistance, electroplating resistance, and film removal resistance, and is suitable for use in the preparation of IC substrates.

[0068] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be considered equivalent substitutions and shall be included within the protection scope of the present invention.

Claims

1. An imide-structured photosensitive and developing resin, characterized in that, The preparation method of the imide-structured photosensitive developing resin includes the following steps: S1. Mix 40-60% of the total amount of dicarboxylic acid anhydride, polyamine, anhydrous zinc acetate, 20-30% of the total amount of polymerization inhibitor, and N-methylpyrrolidone. Heat to 70-80℃ and stir for 0.5-2h in a nitrogen atmosphere, then heat to 140-160℃ and stir continuously for 15-18h. After the reaction is complete, cool the reaction solution to 20-35℃, filter and wash with anhydrous ethanol. Dry the product and grind it to obtain bismaleimide solid powder. S2. Mix the bismaleimide solid powder obtained in step S1 with formic acid and stir at 50-60℃ for 1-3 hours. Then add hydrogen peroxide and continue the reaction for 3-5 hours. After the reaction is complete, add saturated sodium bicarbonate solution and diethyl ether to the reaction product, shake evenly and let stand to separate the layers. Separate the organic layer, wash the organic layer with water 2-3 times, remove the diethyl ether by rotary evaporation, add anhydrous magnesium sulfate and dry overnight, then filter to remove magnesium sulfate to obtain the product. S3. Mix the product obtained in step S2 with the remaining polymerization inhibitor and catalyst, heat the system to 90-100℃, then add the unsaturated monocarboxylic acid, and after the addition is complete, heat the system to 110-120℃ and continue the reaction for 2-3 hours. After the reaction is complete, lower the temperature of the reaction system to 70-90℃, then add the remaining dicarboxylic acid anhydride and react for 6-8 hours to obtain the product. The raw materials used, by weight, are as follows: 2-6 parts polyamine, 6-20 parts dicarboxylic anhydride, 1-6 parts unsaturated monocarboxylic acid, 0.02-0.08 parts polymerization inhibitor, 0.02-0.08 parts catalyst, 2-10 parts hydrogen peroxide, 2-6 parts saturated sodium bicarbonate solution, 1-5 parts diethyl ether, 3-10 parts formic acid, 50-70 parts N-methylpyrrolidone, and 2-8 parts anhydrous zinc acetate; The polyamine is selected from one or more of 4,4'-diaminodicyclohexylmethane, 1,4-cyclohexanedimethylamine, 1,3-cyclohexanedimethylamine, 4,4'-(p-dimethylamino)diphenylmethane, isoflurone diamine, 1,8-octanediamine, polyoxyethylene diamine, and 2,4,6-triaminopyrimidine. The dicarboxylic acid anhydride is selected from one or more of tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride; The unsaturated monocarboxylic acid is selected from one or more of acrylic acid, methacrylic acid, and butenoic acid; The catalyst is selected from one or more of benzyltriethylammonium chloride, benzyldiamine, triethylamine, diethylamine, and triphenylphosphine.

2. The imide-structured photosensitive and developing resin according to claim 1, characterized in that, The polymerization inhibitor is selected from at least one of hydroquinone, p-tert-butylcatechol, and catechol.

3. The imide-structured photosensitive developing resin according to claim 1, characterized in that, In step S2, hydrogen peroxide needs to be added slowly, with the addition time controlled at 2-4 hours.

4. The imide-structured photosensitive and developing resin according to claim 1, characterized in that, In step S1, the stirring speed is 600-800 rpm; in step S2, the stirring speed is 600-800 rpm.

5. The application of the imide-structured photosensitive and developing resin according to any one of claims 1-4 in the preparation of IC substrate solder resist ink, printed circuit board solder resist ink or chip photoresist.

6. A dry film, characterized in that, It is obtained by photocuring or thermocuring the imide-structured photosensitive and developing resin according to any one of claims 1-4.

7. The application of the dry film according to claim 6 in the preparation of IC carriers or printed circuit boards.

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