Crucible preparation method, crucible and single crystal furnace

Abstract

The application provides a preparation method of a crucible, the crucible and a single crystal furnace, and relates to the technical field of single crystal silicon preparation. The preparation method of the crucible comprises the following steps: arranging a carbon source on the outer wall of a crucible body; in an oxygen-free environment, the crucible body with the carbon source arranged on the outer wall is heated to a first preset temperature, so that the carbon source on the outer wall of the crucible body reacts with silicon dioxide in the crucible body to generate an isolation layer on the outer wall of the crucible body; the composition of the isolation layer comprises silicon nitride and / or silicon carbide. In the crystal pulling process, the isolation layer can physically isolate the silicon dioxide in the crucible body and the carbon in the crucible help, so that the loss of the crucible help can be avoided, the isolation layer is located on the outer wall of the crucible body, and the good physical isolation effect is continuously maintained. The isolation layer is not easy to fall off, the structure of the isolation layer is more compact and uniform, and the physical isolation effect is better. The isolation layer basically does not react with the crucible help, and the service life of the crucible help is longer.

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