Electro-optical device and electronic apparatus

Abstract

Provided are an electro-optical device and an electronic device, which can suppress display blurring and the like. The electro-optical device includes a substrate, a pixel electrode disposed on the substrate, and a pixel circuit portion disposed between the substrate and the pixel electrode. The pixel circuit portion includes a scan line disposed in a first direction, a data line disposed in a second direction intersecting the first direction, a first constant potential line disposed along the scan line, a second constant potential line disposed along the data line, a transistor disposed corresponding to an intersection position of the scan line and the data line, including a gate electrode electrically connected to the scan line, a source region electrically connected to the data line, and a drain region electrically connected to the pixel electrode, and a connection portion disposed corresponding to the intersection position, electrically connecting the first constant potential line and the second constant potential line.

Description

[0001] This application is a divisional application of the invention patent application entitled "Electro-optical device and electronic device", filed on March 12, 2020, with application number 202010169368.6. Technical Field

[0002] This invention relates to electro-optical devices and electronic devices. Background Technology

[0003] For example, electro-optical devices such as liquid crystal devices used as light valves in projectors are known. The liquid crystal device described in Patent Document 1 includes scan lines, data lines, and pixel electrodes and thin-film transistors provided for each of the multiple pixels. Furthermore, to prevent fluctuations in the drain electrode potential and ensure capacitance retention, this liquid crystal device has shielding layers for the data lines and shielding layers for the scan lines.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2018-40969

[0005] However, in existing LCD devices, the potentials of the two shielding layers fluctuate independently due to the influence of scan lines or data lines, resulting in a varying potential difference between these shielding layers for each pixel. Consequently, the holding capacitance changes for each pixel, potentially leading to display blurring and other operational malfunctions. Summary of the Invention

[0006] One aspect of the present invention is an electro-optic device comprising: a substrate; a pixel electrode disposed on the substrate; and a pixel circuit section disposed between the substrate and the pixel electrode, the pixel circuit section comprising: a scan line disposed along a first direction; a data line disposed along a second direction intersecting the first direction; a first constant potential line disposed along the scan line; a second constant potential line disposed along the data line; a transistor disposed corresponding to the intersection of the scan line and the data line, comprising a gate electrode electrically connected to the scan line, a source region electrically connected to the data line, and a drain region electrically connected to the pixel electrode; and a connection portion disposed corresponding to the intersection position, thereby electrically connecting the first constant potential line and the second constant potential line. Attached Figure Description

[0007] Figure 1 This is a top view of the electro-optical device of this embodiment.

[0008] Figure 2 This is a cross-sectional view of the electro-optical device of this embodiment.

[0009] Figure 3 This is an equivalent circuit diagram showing the electrical structure of the component substrate of this embodiment.

[0010] Figure 4 This is an exploded perspective view showing a portion of the various wirings present in the pixel circuit section of this embodiment.

[0011] Figure 5 This is a top view showing a portion of the pixel circuit section and the pixel electrode of this embodiment.

[0012] Figure 6 This is a schematic cross-sectional view showing a portion of the component substrate of this embodiment.

[0013] Figure 7 This is a cross-sectional view schematically showing a portion of the component substrate of the first modified example.

[0014] Figure 8 This is a cross-sectional view schematically showing a portion of the component substrate of the second modified example.

[0015] Figure 9 This is a three-dimensional view showing a personal computer as an example of an electronic device.

[0016] Figure 10 This is a perspective view showing a smartphone as an example of an electronic device.

[0017] Figure 11 This is a schematic diagram showing a projector as an example of an electronic device.

[0018] Label Explanation

[0019] 2: Component substrate; 4: Opposing substrate; 8: Sealing component; 9: Liquid crystal layer; 11: Scan line driving circuit; 12: Data line driving circuit; 14: External terminal; 15: Wiring; 20: Pixel circuit section; 21: First substrate; 22: Insulator; 23: Transistor; 25: First capacitor; 26: Second capacitor; 28: Pixel electrode; 29: First alignment film; 41: Second substrate; 42: Transmitting layer; 45: Opposing electrode; 46: Second alignment film; 80: Sealing material; 81: Injection port; 100: Electro-optic device ; 221: Insulating layer; 222: Insulating layer; 223: Insulating layer; 224: Insulating layer; 225: Insulating layer; 226: Insulating layer; 227: Insulating layer; 228: Insulating layer; 229: Insulating layer; 231: Semiconductor layer; 231a: Source region; 231b: Drain region; 231c: Channel region; 231d: First LDD region; 231e: Second LDD region; 232: Gate electrode; 233: Gate insulating film; 241: Light shield; 242: Source wiring; 243: Drain wiring; 244: 245: Scan line; 246: First constant potential line; 247: Data line; 248: Connection wiring; 249: Second constant potential line; 251: Electrode; 252: Electrode; 253: Dielectric layer; 256: Storage capacitor; 261: Electrode; 262: Electrode; 263: Dielectric layer; 270: Shielding part; 271: Contact part; 272: Contact part; 273: Contact part; 274: Contact part; 275: Contact part; 276: Contact part; 277: Contact part; 278: Contact part; 279: Contact part; 28 0: Connecting part; 281: Contact part; 282: Contact part; 283: Contact part; 284: Contact part; 2000: Personal computer; 2001: Power switch; 2002: Keyboard; 2010: Main body; 3000: Smartphone; 3001: Operation button; 4000: Projection display device; 4001: Illumination optical system; 4002: Illumination device; 4003: Projection optical system; 4004: Projection surface; A10: Display area; A20: Peripheral area; C1: Intersection position; P: Pixel. Detailed Implementation

[0020] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Note that the dimensions and scales of the parts in the drawings differ appropriately from actual dimensions, and some parts are shown schematically for ease of understanding. Furthermore, unless otherwise specified in the following description, the scope of the present invention is not limited to these embodiments.

[0021] 1. Electro-optical device

[0022] As an example of the electro-optical device of the present invention, an active matrix liquid crystal device will be described.

[0023] 1-1. Basic Structure

[0024] Figure 1 This is a top view of the electro-optical device 100 of this embodiment. Figure 2 This is a cross-sectional view of the electro-optical device 100 of this embodiment. Figure 1 The AA-line sectional view in the diagram. Additionally, for ease of explanation, the following sections will appropriately use the sections from [the diagram]. Figure 1 and Figure 2 The x-axis, y-axis, and z-axis, which are perpendicular to each other, will be used for explanation. Hereinafter, the end of the arrow indicating the direction of each axis will be referred to as the "+ side," and the base side as the "- side." Furthermore, the direction pointed to by the arrow in the x-axis is designated as the +x direction, and the opposite direction of the +x direction is designated as the -x direction. The same applies to the y-axis and z-axis. In this embodiment, the "first direction" is the +y direction, and the "second direction" intersecting the "first direction" is the -x direction. Additionally, the "third direction" where the first substrate 21 overlaps with the pixel electrode 28 (described later) is the -z direction. Viewing from the -z direction will be simply referred to as "top view."

[0025] Figure 1 and Figure 2 The electro-optical device 100 shown is a transmissive liquid crystal device. For example... Figure 2 As shown, the electro-optic device 100 includes: a component substrate 2, which is transparent; a counter substrate 4, which is transparent; a frame-shaped sealing member 8; and a liquid crystal layer 9. The sealing member 8 is disposed between the component substrate 2 and the counter substrate 4. The liquid crystal layer 9 is disposed in the area surrounded by the component substrate 2, the counter substrate 4, and the sealing member 8. Here, the alignment direction of the counter substrate 4, the liquid crystal layer 9, and the component substrate 2 is the -z direction, and the surface of the component substrate 2 is parallel to the xy plane.

[0026] For the electro-optic device 100, light can either enter from the element substrate 2, pass through the liquid crystal layer 9, and exit from the opposing substrate 4, or it can enter from the opposing substrate 4, pass through the liquid crystal layer 9, and exit from the element substrate 2. Furthermore, the light transmitted through the electro-optic device 100 is visible light. In this specification, light transmittance refers to the transmittance of visible light, and preferably, the transmittance of visible light is 50% or more. Additionally, as... Figure 1 As shown, the electro-optical device 100 has a quadrilateral shape when viewed from above, but the top view shape of the electro-optical device 100 is not limited to this, for example, it can also be circular.

[0027] like Figure 1 As shown, the component substrate 2 includes the size of the opposing substrate 4 when viewed from above. Figure 2As shown, the component substrate 2 has a first substrate 21 as a "substrate", a pixel circuit section 20, a plurality of pixel electrodes 28, and a first alignment film 29. The first substrate 21, the pixel circuit section 20, the plurality of pixel electrodes 28, and the first alignment film 29 are arranged in this order. The first alignment film 29 is located on the side closest to the liquid crystal layer 9. The first substrate 21 is made of a flat plate that is both transparent and insulating. The first substrate 21 is made of, for example, glass or quartz. The pixel circuit section 20 has various wirings. The pixel electrodes 28 are transparent and are made of, for example, transparent conductive materials such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The first alignment film 29 aligns the liquid crystal molecules of the liquid crystal layer 9. Examples of structural materials for the first alignment film 29 include, for example, polyimide and silicon oxide. The pixel circuit section 20 will be described in detail later.

[0028] like Figure 2 As shown, the counter substrate 4 has a second substrate 41, a light-transmitting layer 42, a counter electrode 45, and a second alignment film 46. The second substrate 41, light-transmitting layer 42, counter electrode 45, and second alignment film 46 are arranged in this order. The second alignment film 46 is located closest to the liquid crystal layer 9. The second substrate 41 is made of a flat plate having both light transmittance and insulation properties. The second substrate 41 is made of, for example, glass or quartz. The light-transmitting layer 42 is formed of, for example, a silicon-based inorganic material having both light transmittance and insulation properties, such as silicon oxide. The counter electrode 45 is made of, for example, a transparent conductive material such as ITO or IZO. The second alignment film 46 orients the liquid crystal molecules of the liquid crystal layer 9. Examples of structural materials for the second alignment film 46 include, for example, polyimide and silicon oxide.

[0029] The sealing component 8 is formed, for example, using an adhesive containing various curable resins such as epoxy resin. The sealing component 8 is fixed to both the component substrate 2 and the opposing substrate 4. Figure 1 As shown, an injection port 81 for injecting liquid crystal material containing liquid crystal molecules is formed on a part of the sealing member 8, and the injection port 81 is sealed by a sealing material 80 formed using various resin materials.

[0030] Figure 2 The liquid crystal layer 9 shown contains liquid crystal molecules having positive or negative dielectric anisotropy. The liquid crystal layer 9 is held between the element substrate 2 and the opposing substrate 4 in such a manner that the liquid crystal molecules are in contact with both the first alignment film 29 and the second alignment film 46. The orientation of the liquid crystal molecules in the liquid crystal layer 9 changes according to the voltage applied to the liquid crystal layer 9. The liquid crystal layer 9 modulates light according to the applied voltage, thereby enabling grayscale display.

[0031] In addition, such as Figure 1As shown, multiple scan line drive circuits 11 and data line drive circuits 12 are arranged on the side of the component substrate 2 facing the opposing substrate 4. Additionally, multiple external terminals 14 are arranged on the side of the component substrate 2 facing the opposing substrate 4. Lead-wires 15, respectively drawn from the scan line drive circuits 11 and the data line drive circuits 12, are connected to the external terminals 14.

[0032] The electro-optical device 100 of this structure includes: a display area A10 that displays images, etc.; and a peripheral area A20 that surrounds the display area A10 when viewed from above. A plurality of pixels P arranged in a matrix are provided in the display area A10. A scan line driving circuit 11 and a data line driving circuit 12, etc., are disposed in the peripheral area A20. In addition to the plurality of pixels P that participate in the display, the display area A10 may also include dummy pixels that do not participate in the display and are arranged to surround the plurality of pixels P.

[0033] 1-2. Electrical Structure

[0034] Figure 3 This is an equivalent circuit diagram showing the electrical structure of the component substrate 2 in this embodiment. (Example) Figure 3 As shown, the component substrate 2 has n scan lines 244, m data lines 246, and a first constant potential line 245 serving as n capacitor lines. n and m are integers greater than or equal to 2.

[0035] n scan lines 244 extend along the +y direction and are evenly spaced along the -x direction. The scan lines 244 are electrically connected to the gate of transistor 23. Furthermore, the n scan lines 244 are... Figure 1 The scan line drive circuit 11 shown is electrically connected. Scan signals G1, G2, ..., and Gn are provided from the scan line drive circuit 11 to the n scan lines 244 in line order.

[0036] Figure 3 The m data lines 246 shown extend along the -x direction and are evenly spaced along the +y direction. The data lines 246 are electrically connected to the source of the transistor 23. Furthermore, the m data lines 246 are... Figure 1 The data line driver circuit 12 shown is electrically connected. Image signals S1, S2, ..., and Sm are transmitted in parallel from... Figure 1 The data line driver circuit 12 shown provides power to m data lines 246.

[0037] Figure 3The n scan lines 244 and m data lines 246 shown are insulated from each other and appear as a grid when viewed from above. The area surrounded by two adjacent scan lines 244 and two adjacent data lines 246 corresponds to a pixel P. One pixel electrode 28 is provided for each pixel P. One transistor 23 is provided corresponding to one pixel electrode 28. The pixel electrode 28 is electrically connected to the corresponding transistor 23. The transistor 23 controls the switching of its corresponding pixel electrode 28. The transistor 23 is, for example, a TFT that functions as a switching element.

[0038] n first constant potential lines 245 extend along the +y direction and are arranged at equal intervals in the -x direction. Furthermore, the n first constant potential lines 245 are insulated from and formed away from the plurality of data lines 246 and the plurality of scan lines 244. A fixed constant potential, such as a ground potential, is applied to the first constant potential lines 245. Additionally, to prevent leakage of the charge held by the liquid crystal capacitor, a storage capacitor 256 is arranged between the first constant potential lines 245 and the pixel electrode 28. The storage capacitor 256 is a capacitive element used to maintain the potential of the pixel electrode 28 according to the provided image signal Sm.

[0039] When scan signals G1, G2, ..., Gn are activated sequentially and n scan lines 244 are selected sequentially, the transistor 23 connected to the selected scan line 244 becomes on. Thus, image signals S1, S2, ..., Sm, corresponding to the grayscale level to be displayed, are input to the pixel P corresponding to the selected scan line 244 via m data lines 246 and applied to the pixel electrode 28. This, in turn, applies signals to the pixel electrode 28 and... Figure 2 A voltage corresponding to the grayscale to be displayed is applied to the liquid crystal capacitor between the counter electrodes 45 of the counter substrate 4 shown, causing the orientation of the liquid crystal molecules to change according to the applied voltage. Furthermore, the applied voltage is maintained by the storage capacitor 256. By changing the orientation of the liquid crystal molecules in this way, light can be modulated for grayscale display.

[0040] 1-3. Pixel circuit section 20

[0041] Figure 4 This is an exploded perspective view showing a portion of the various wirings present in the pixel circuit section 20 of this embodiment. Figure 4 The diagram illustrates various wiring configurations for one pixel P. For example... Figure 4As shown, the pixel circuit section 20 includes a light-shielding body 241, a transistor 23, a source wiring 242, a drain wiring 243, a scan line 244, a first constant potential line 245, a storage capacitor 256, a data line 246, a connection wiring 247, and a second constant potential line 248. The transistor 23, scan line 244, first constant potential line 245, storage capacitor 256, data line 246, and second constant potential line 248 are arranged in this order from the light-shielding body 241 toward the pixel electrode 28. Furthermore, for each pixel P, a light-shielding body 241, a transistor 23, a source wiring 242, a drain wiring 243, a storage capacitor 256, and a connection wiring 247 are provided. That is, for each pixel electrode 28, a light-shielding body 241, a transistor 23, a source wiring 242, a drain wiring 243, a storage capacitor 256, and a connection wiring 247 are provided.

[0042] Scan lines 244, a first constant potential line 245, a data line 246, and a second constant potential line 248 are configured for all pixels of the plurality of pixels P. The first constant potential line 245 is configured corresponding to the scan line 244. Specifically, the first constant potential line 245 is configured along the +y direction, approximately parallel to the corresponding scan line 244. The first constant potential line 245 overlaps with the corresponding scan line 244 when viewed from above. This first constant potential line 245 functions as a shielding line for the scan line 244. Similarly, the second constant potential line 248 is configured corresponding to the data line 246. Specifically, the second constant potential line 248 is configured along the -x direction, approximately parallel to the corresponding data line 246. The second constant potential line 248 overlaps with the corresponding data line 246 when viewed from above. This second constant potential line 248 functions as a shielding line for the data line 246.

[0043] Figure 5 This is a top view showing a portion of the pixel circuit section 20 and the pixel electrode 28 of this embodiment. Figure 5 As shown, the multiple scan lines 244 and multiple data lines 246 appear as a grid when viewed from above. Similarly, the multiple first constant potential lines 245 and multiple second constant potential lines 248 appear as a grid when viewed from above.

[0044] Pixel electrode 28 overlaps with the area surrounded by two adjacent scan lines 244 and two adjacent data lines 246 when viewed from above. One transistor 23 and one storage capacitor 256 are correspondingly disposed with respect to one pixel electrode 28. The transistor 23 and storage capacitor 256 are configured corresponding to the intersection C1 of the scan lines 244 and data lines 246. Specifically, a portion of each of the transistor 23 and storage capacitor 256 overlaps with the intersection C1. The intersection C1 is the portion where the scan lines 244 and data lines 246 intersect when viewed from above; it is the portion where they overlap.

[0045] In addition, although Figure 5 Although not illustrated, a light-shielding body 241, a source wiring 242, a drain wiring 243, and a connecting wiring 247 are respectively arranged with a pixel electrode 28. In addition, the aforementioned light-shielding body 241, source wiring 242, drain wiring 243, and connecting wiring 247 are respectively configured with the intersection position C1.

[0046] Figure 6 This is a schematic cross-sectional view showing a portion of the component substrate 2 in this embodiment. Additionally, Figure 6 It's an image focusing on 1 pixel P. In Figure 6 In the diagram, various wiring configurations are illustrated for ease of understanding.

[0047] like Figure 6 As shown, the pixel circuit section 20 is disposed between the first substrate 21 and the pixel electrode 28. The light-shielding body 241 of the pixel circuit section 20 is disposed on the first substrate 21. The light-shielding body 241 has light-shielding and conductive properties. Alternatively, the light-shielding body 241 can be disposed within a recess provided in the first substrate 21. For example, this recess can be formed by an inlay method. Furthermore, examples of structural materials for the light-shielding body 241 include metals such as tungsten (W), titanium (Ti), chromium (Cr), iron (Fe), and aluminum (Al), as well as metal nitrides and metal silicides. Among these, tungsten is preferred. Tungsten has excellent heat resistance among various metals and is not prone to a decrease in its OD (Optical Density) value due to heat treatment during manufacturing, for example. Therefore, by including tungsten in the light-shielding body 241, it is possible to effectively prevent light from incident onto the transistor 23.

[0048] The various wirings of the pixel circuit section 20 are arranged on the light-transmitting insulator 22 of the pixel circuit section 20. The insulator 22 covers the light-shielding body 241 and is disposed on the first substrate 21. The insulator 22 has insulating layers 221, 222, 223, 224, 225, 226, 227, 228, and 229. These layers are arranged in this order from the first substrate 21 toward the pixel electrode 28. These layers are respectively composed of, for example, silicon oxide films formed by thermal oxidation or CVD (chemical vapor deposition) methods.

[0049] A semiconductor layer 231 of the transistor 23 is disposed between insulating layers 221 and 222. A gate electrode 232 of the transistor 23 is disposed between insulating layers 222 and 223. A source wiring 242, a drain wiring 243, and a scan line 244 are disposed between insulating layers 223 and 224. A first constant potential line 245 is disposed between insulating layers 224 and 225. A first capacitor 25 of the storage capacitor 256 is disposed between insulating layers 225 and 226. A second capacitor 26 of the storage capacitor 256 is disposed between insulating layers 226 and 227. A data line 246 is disposed between insulating layers 227 and 228. A second constant potential line 248 and a connection wiring 247 are disposed between insulating layers 228 and 229.

[0050] Transistor 23 has a semiconductor layer 231, a gate electrode 232, and a gate insulating film 233. Semiconductor layer 231 has a source region 231a, a drain region 231b, a channel region 231c, a first LDD (Lightly Doped Drain) region 231d, and a second LDD region 231e. Channel region 231c is located between source region 231a and drain region 231b. First LDD region 231d is located between channel region 231c and source region 231a. Second LDD region 231e is located between channel region 231c and drain region 231b. For example, the semiconductor layer 231 is formed by depositing polysilicon, and impurities that improve conductivity are doped in regions other than channel region 231c. The impurity concentration in first LDD region 231d and second LDD region 231e is lower than the impurity concentration in source region 231a and drain region 231b. Alternatively, at least one of the first LDD region 231d and the second LDD region 231e may be omitted, especially the first LDD region 231d.

[0051] The gate electrode 232 overlaps with the channel region 231c of the semiconductor layer 231 when viewed from above. For example, the gate electrode 232 is formed by doping polysilicon with impurities that improve conductivity. Alternatively, the gate electrode 232 can be formed using conductive materials such as metals, metal silicides, and metal compounds. Furthermore, a gate insulating film 233 is situated between the gate electrode 232 and the channel region 231c. The gate insulating film 233 is, for example, made of silicon oxide formed by thermal oxidation or CVD.

[0052] The source region 231a of transistor 23 is connected to source wiring 242 via a contact 271 penetrating insulating layers 222 and 223. Source wiring 242 is connected to data line 246 via a contact 275 penetrating insulating layers 224, 225, 226, and 227. The drain region 231b is connected to drain wiring 243 via a contact 272 penetrating insulating layers 222 and 223. Drain wiring 243 is connected to the second capacitor 26 of storage capacitor 256 via a contact 276 penetrating insulating layers 224, 225, and 226. Gate electrode 232 is connected to scan line 244 via a contact 273 penetrating insulating layer 223. Furthermore, scan line 244 is connected to the light-shielding body 241 via a contact 274 penetrating insulating layers 221, 222, and 223. The light-shielding body 241, together with the gate electrode 232 of the transistor 23, functions as a gate electrode.

[0053] Furthermore, the first constant potential line 245 has a shielding portion 270. The shielding portion 270 functions as a shield to suppress the influence of the leakage electric field from the scan line 244 on the transistor 23 and the drain wiring 243, and as a light-shielding portion of the semiconductor layer 231. Therefore, one end of the shielding portion 270 is connected to the first constant potential line 245, and the portion extending from this end penetrates the insulating layer 224 and is disposed at a midpoint in the thickness direction of the insulating layer 223. In addition, when viewed from above, the shielding portion 270 is disposed at a position overlapping with the second LDD region 231e, and its extended portion extends from the first constant potential line 245 through the space between the scan line 244 and the drain wiring 243, extending to a midpoint in the thickness direction of the insulating layer 223 disposed between the scan line 244 and the second LDD region 231e. Furthermore, the shielding portion 270 is electrically connected to the first constant potential line 245 and is provided with a constant potential from the first constant potential line 245.

[0054] Storage capacitor 256 has a first capacitor 25 and a second capacitor 26. The first capacitor 25 has a pair of electrodes 251 and 252 and a dielectric layer 253. The dielectric layer 253 is disposed between electrodes 251 and 252. Electrode 251 is disposed on insulating layer 225. Electrode 251 is connected to a first constant potential line 245 via a contact portion 277 penetrating insulating layer 225. Electrode 252 is connected to a connection wiring 247 via a contact portion 279 penetrating insulating layers 226, 227, and 228. Connection wiring 247 is connected to a pixel electrode 28 via a contact portion 283 penetrating insulating layer 229.

[0055] On the other hand, the second capacitor 26 has a portion that overlaps with the first capacitor 25 when viewed from above. The second capacitor 26 has a pair of electrodes 261 and 262 and a dielectric layer 263. Electrode 261 corresponds to the "second electrode". Electrode 262 corresponds to the "first electrode". Dielectric layer 263 corresponds to the "dielectric". Dielectric layer 263 is disposed between electrodes 261 and 262. Electrode 261 is disposed on insulating layer 226. Electrode 261 is connected to electrode 252 of the first capacitor 25 via contact portion 278 penetrating insulating layer 226. Electrode 262 is connected to the first constant potential line 245 via contact portion 281 penetrating insulating layers 225 and 226. In addition, electrode 262 is connected to the second constant potential line 248 via contact portion 282 penetrating insulating layers 227 and 228.

[0056] Here, the connection portion 280 is formed by contact portion 281 and contact portion 282. Contact portion 281 is the "first connection portion" that connects the first constant potential line 245 to the electrode 262. Contact portion 282 is the "second connection portion" that connects the second constant potential line 248 to the electrode 262. Furthermore, similar to the first constant potential line 245, a fixed constant potential, such as a ground potential, is applied to the second constant potential line 248. The fixed constant potential provided to the first constant potential line 245 and the fixed constant potential provided to the second constant potential line 248 are the same potential.

[0057] Furthermore, the connection wiring 247 and the second constant potential line 248 are disposed on the same layer, but on a different layer than the data line 246. By not disposing of the data line 246 and the connection wiring 247 on the same layer, coupling between adjacent lines can be suppressed.

[0058] Examples of structural materials used for the source wiring 242, drain wiring 243, scan line 244, first constant potential line 245, data line 246, connection wiring 247, second constant potential line 248, electrode 251, electrode 252, electrode 261, and electrode 262 include metals such as tungsten, titanium, chromium, iron, and aluminum, metal nitrides, and metal silicides. Specifically, for example, the electrodes 251, 252, 261, and 262 of the storage capacitor 256 are each composed of a titanium nitride film. Furthermore, for example, the source wiring 242, drain wiring 243, scan line 244, first constant potential line 245, data line 246, connection wiring 247, and second constant potential line 248 are each composed of a titanium nitride film, an aluminum film, and a stack of titanium nitride films. Since these wirings include an aluminum film, lower resistance can be achieved compared to the case where only a titanium nitride film is used.

[0059] Furthermore, aluminum and tungsten are examples of metals used as structural materials for contacts 271 to 283. Additionally, contact 274 may be integrally formed with scan line 244. The other contacts 271 to 273 and 275 to 283, like contact 274, may be integrally formed with connected wiring, etc. Similarly, shielding 270 may also be integrally formed with the first constant potential line 245.

[0060] As described above, the electro-optic device 100 includes: a first substrate 21; a pixel electrode 28 disposed on the first substrate 21; and a pixel circuit section 20 disposed between the first substrate 21 and the pixel electrode 28. The pixel circuit section 20 includes: a scan line 244 disposed along the +y direction; a data line 246 disposed along the -x direction; a first constant potential line 245 disposed along the scan line 244; a second constant potential line 248 disposed along the data line 246; and a transistor 23 disposed corresponding to the intersection C1 of the scan line 244 and the data line 246. Furthermore, the pixel circuit section 20 includes a connection portion 280 that electrically connects the first constant potential line 245 and the second constant potential line 248. Moreover, the connection portion 280 is disposed corresponding to the intersection C1.

[0061] By having a connection portion 280, the first constant potential line 245 and the second constant potential line 248 are connected at each pixel P. By connecting the first constant potential line 245 and the second constant potential line 248, even if the potentials of the first constant potential line 245 and the second constant potential line 248 are affected by the scan line 244 or the data line 246, the potential difference between the first constant potential line 245 and the second constant potential line 248 can be reduced. Furthermore, by connecting at each pixel P, deviations in the potential difference between the first constant potential line 245 and the second constant potential line 248 between pixels P can be suppressed. In addition, deviations in the potential difference between the first constant potential line 245 and the second constant potential line 248 between pixels P due to the influence of the time constants of the first constant potential line 245 and the second constant potential line 248 can be suppressed. The potential difference deviation between the first constant potential line 245 and the second constant potential line 248 between pixels P can be suppressed, thus suppressing changes in the holding capacitance in the storage capacitor 256 for each pixel P. As a result, operational defects such as display blurring of the electro-optical device 100 can be suppressed. Therefore, even if the number of pixels P is increased to achieve high-resolution display, resulting in a smaller pixel size, operational defects such as display blurring can still be reduced.

[0062] Furthermore, as described above, the storage capacitor 256 has an electrode 262 serving as a "first electrode," an electrode 261 electrically connected to the drain region 231b serving as a "second electrode," and a dielectric layer 263 disposed between the electrodes 262 and 261 serving as a "dielectric." Additionally, the connection portion 280 has a contact portion 281 serving as a "first connection portion" connecting the first constant potential line 245 to the electrode 262, and a contact portion 282 serving as a "second connection portion" connecting the second constant potential line 248 to the electrode 262. Therefore, the first constant potential line 245 and the second constant potential line 248 are electrically connected via the electrode 262 through the contact portions 281 and 282. Thus, the first constant potential line 245 and the second constant potential line 248 can each function as a capacitor line. Furthermore, by connecting the contact portion 281 and the contact portion 282 via the electrode 262, compared to the case where they are not connected via the electrode 262, the degree of freedom in the arrangement and size of the storage capacitor 256, the first constant potential line 245, the second constant potential line 248, the contact portion 281, and the contact portion 282 can be increased.

[0063] Furthermore, as described above, the storage capacitor 256 is disposed within insulating layers 225, 226, and 227, which serve as the layer between the first constant potential line 245 and the second constant potential line 248. Therefore, for example, compared to the case where the storage capacitor 256 is not disposed between the first constant potential line 245 and the second constant potential line 248, it is possible to avoid complicating the electrical connection between the first constant potential line 245 and the second constant potential line 248 and the storage capacitor 256.

[0064] Furthermore, as described above, the storage capacitor 256 has a first capacitor 25 and a second capacitor 26. Therefore, compared to the case where the storage capacitor 256 has only one capacitor, the static capacitance can be made larger. Therefore, the voltage can be properly maintained.

[0065] Furthermore, the electrode 251 of the first capacitor 25 and the electrode 262 of the second capacitor 26 are electrically connected to the first constant potential line 245. Therefore, a constant potential is provided to the electrodes 251 and 262. Moreover, the electrodes 252 and 261, which are electrically connected to the drain region 231b, are disposed between the electrodes 251 and 262. Therefore, electrical interactions between the electrodes 252 and 261 and other wiring such as the data line 246 can be suppressed. Thus, changes in the holding capacitance of the storage capacitor 256 can be suppressed more effectively. Furthermore, by arranging the first capacitor 25 and the second capacitor 26 such that the electrodes 252 and 261 are located between the electrodes 251 and 262, the number of contacts for electrically connecting the storage capacitor 256 to the pixel electrode 28 can be reduced. Similarly, the number of contacts for electrically connecting the storage capacitor 256 to the drain region 231b can be reduced.

[0066] Furthermore, as described above, the first constant potential line 245 and the second constant potential line 248 are electrically connected via the electrode 262 of the second capacitor 26. Therefore, compared to the case where they are electrically connected via the electrode 251 of the first capacitor 25, the degree of freedom in the arrangement and size of the first constant potential line 245, the second constant potential line 248, the contact portion 281, and the contact portion 282 can be increased.

[0067] Furthermore, as described above, the second constant potential line 248 is disposed in insulating layers 228 and 229, which serve as the layer between the data line 246 and the pixel electrode 28. Therefore, electrical interactions such as coupling caused by parasitic capacitance between the data line 246 and the pixel electrode 28 can be suppressed. Thus, potential fluctuations in the pixel electrode 28 due to the influence of the data line 246 can be effectively suppressed. Additionally, the first constant potential line 245 is disposed in insulating layers 224 and 225, which serve as the layer between the scan line 244 and the storage capacitor 256. Therefore, fluctuations in the electrostatic capacitance of the storage capacitor 256 due to the influence of the scan line 244 can be suppressed.

[0068] Furthermore, the first constant potential line 245 overlaps with the scan line 244 when viewed from the -z direction. Therefore, compared to the case where the first constant potential line 245 does not overlap with the scan line 244, the potential variation of the pixel electrode 28 due to the influence of the scan line 244 can be suppressed more effectively. Additionally, the second constant potential line 248 overlaps with the data line 246 when viewed from the -z direction. Therefore, compared to the case where the second constant potential line 248 does not overlap with the data line 246, the electrostatic capacitance variation in the storage capacitor 256 due to the influence of the data line 246 can be suppressed more effectively.

[0069] Furthermore, as described above, the contact portion 274 can be integrally formed with the scan line 244, but it is preferable to form it separately from the scan line 244. In this case, contact holes are drilled in the insulating layers 221, 222, and 223, and the contact portion 274 is formed by embedding tungsten or the like in these contact holes. That is, when the structural material of the contact portion 274 is tungsten, the contact portion 274 is preferably made of a tungsten plug. By making it of a tungsten plug, the thickness of the scan line 244 can be thinner compared to the case where the contact portion 274 is integrally formed with the scan line 244. Therefore, the thickness of the insulator 22 can be thinner, thereby improving the optical properties of the element substrate 2. The other contacts 271 to 273 and 275 to 281 are also the same. In addition, the light shield 241 may not function as a gate electrode. In this case, the light shield 241 can be made of an insulating material.

[0070] 2. Variations

[0071] The methods illustrated above can be varied in many ways. Below, specific variations of each method are illustrated. Any two or more methods selected from the following examples can be appropriately combined without contradiction.

[0072] 2-1. First Variation

[0073] In the described embodiment, the connecting portion 280 is composed of a contact portion 281 and a contact portion 282, but the structure of the connecting portion 280 is not limited to this. Figure 7 This is a schematic cross-sectional view showing a portion of the element substrate 2A in the first modified example. The pixel circuit section 20A of the element substrate 2A has a connection section 280A. The connection section 280A directly connects the first constant potential line 245 and the second constant potential line 248. That is, the connection section 280A allows the first constant potential line 245 and the second constant potential line 248 to be electrically connected without passing through the electrode 262. According to this structure, low resistance can be achieved for the first constant potential line 245 and the second constant potential line 248. Furthermore, as... Figure 7 As shown, the component substrate 2A has a contact portion 284 that electrically connects the second constant potential line 248 to the electrode 262. By providing the contact portion 284, the second constant potential line 248 can be appropriately used as a capacitor line.

[0074] 2-2. Second variation

[0075] Figure 8 This is a schematic cross-sectional view showing a portion of the element substrate 2B in the second modified example. The pixel circuit section 20B of the element substrate 2B has a connection section 280B. The connection section 280B includes a contact section 282B and a contact section 277. The contact section 277 electrically connects the first constant potential line 245 and the second constant potential line 248, and electrically connects the first constant potential line 245 to the electrode 251. The contact section 282B electrically connects the second constant potential line 248 to the electrode 251. Figure 8 In the example shown, contact 277 corresponds to the "first connection" that connects the first constant potential line 245 to the electrode 251. Contact 282B corresponds to the "second connection" that connects the second constant potential line 248 to the electrode 251. In addition, electrode 251 corresponds to the "first electrode", electrode 252 corresponds to the "second electrode", and "dielectric" corresponds to the dielectric layer 253.

[0076] 2-3. Third variation

[0077] In the described embodiment, the connection portion 280 is provided for all pixels P, but it is also possible to provide the connection portion 280 only for a few arbitrary pixels P among all pixels P. However, by providing the connection portion 280 for all pixels P, display blur can be reduced particularly effectively.

[0078] 2-4. Fourth variation

[0079] In the described embodiment, the first capacitor 25 and the second capacitor 26 are disposed in the layer between the first constant potential line 245 and the second constant potential line 248, but the arrangement of the first capacitor 25 and the second capacitor 26 is not limited to this and is arbitrary. For example, the second capacitor 26 may also be disposed in the layer between the second constant potential line 248 and the pixel electrode 28. In addition, the storage capacitor 256 has the first capacitor 25 and the second capacitor 26, but the storage capacitor 256 may also be composed of a single capacitor.

[0080] 2-5. Fifth variation

[0081] In the described embodiment, the first constant potential line 245 and the second constant potential line 248 function as capacitor lines, but it is also possible for both or any one of them to function as capacitor lines. Furthermore, if not both of them function as capacitor lines, additional capacitor lines are required; therefore, it is preferable to have at least one function as a capacitor line. By having at least one function as a capacitor line, the thickness of the component substrate 2 can be reduced compared to having additional capacitor lines, thereby suppressing the degradation of optical properties.

[0082] 2-6. Sixth variation

[0083] In the described embodiment, the first constant potential line 245 is positioned closer to the +z axis than the scan line 244. However, depending on various wiring configurations, the first constant potential line 245 may be positioned closer to the -z axis than the scan line 244. Similarly, in the described embodiment, the second constant potential line 248 is positioned closer to the +z axis than the data line 246. However, depending on various wiring configurations, the second constant potential line 248 may be positioned closer to the -z axis than the data line 246.

[0084] 2-7. Seventh variation

[0085] In the described embodiment, the first constant potential line 245 may also not overlap with the scan line 244 when viewed from above. Similarly, the second constant potential line 248 may also not overlap with the data line 246 when viewed from above.

[0086] 2-8. Eighth variation

[0087] In the described embodiment, the case where the "transistor" is a TFT is used as an example, but the "transistor" is not limited to this. For example, a MOSFET (metal-oxide-semiconductor field-effect transistor) can also be used.

[0088] 3. Electronic devices

[0089] The electro-optical device 100 can be used in various electronic devices.

[0090] Figure 9 This is a perspective view showing a personal computer 2000 as an example of an electronic device. The personal computer 2000 includes: an electro-optical device 100 that displays various images; and a main body 2010 that is equipped with a power switch 2001 and a keyboard 2002.

[0091] Figure 10 This is a perspective view showing a smartphone 3000 as an example of an electronic device. The smartphone 3000 has operation buttons 3001 and an electro-optical device 100 for displaying various images. The content displayed on the electro-optical device 100 changes depending on the operation of the operation buttons 3001.

[0092] Figure 11 This is a schematic diagram showing a projector as an example of an electronic device. The projection display device 4000 is, for example, a three-panel projector. The electro-optical device 1r is an electro-optical device 100 corresponding to the red display color, the electro-optical device 1g is an electro-optical device 100 corresponding to the green display color, and the electro-optical device 1b is an electro-optical device 100 corresponding to the blue display color. That is, the projection display device 4000 has three electro-optical devices 1r, 1g, and 1b, respectively corresponding to the red, green, and blue display colors.

[0093] The illumination optical system 4001 provides the red component *r* from the emitted light from the illumination device 4002 (which serves as a light source) to the electro-optical device 1r, the green component *g* to the electro-optical device 1g, and the blue component *b* to the electro-optical device 1b. Each of the electro-optical devices 1r, 1g, and 1b functions as a light modulator, such as a light valve, to modulate the monochromatic light provided from the illumination optical system 4001 according to the displayed image. The projection optical system 4003 combines the emitted light from each of the electro-optical devices 1r, 1g, and 1b and projects it onto the projection surface 4004.

[0094] The personal computer 2000, smartphone 3000, and projection display device 4000 each have the electro-optical device 100. Because of the electro-optical device 100, the display quality of each of the personal computer 2000, smartphone 3000, and projection display device 4000 can be improved.

[0095] The present invention has been described above based on preferred embodiments, but the present invention is not limited to the described embodiments. Furthermore, the structure of each part of the present invention can be replaced with any structure that performs the same function as the described embodiments, and arbitrary structures can be added.

[0096] Furthermore, the electronic devices employing the electro-optical device of the present invention are not limited to the illustrated devices, but include, for example, PDAs (Personal Digital Assistants), digital still cameras, televisions, video cameras, car navigation systems, in-vehicle displays, electronic notebooks, electronic paper, electronic calculators, word processors, workstations, videophones, and POS (Point of Sale) terminals. Additionally, examples of electronic devices employing the present invention include printers, scanners, copiers, video players, or devices with touch panels.

[0097] Furthermore, while a liquid crystal device has been described as an example of an electro-optical device according to the present invention in the preceding description, the electro-optical device of the present invention is not limited thereto. For example, the electro-optical device of the present invention can also be applied to image sensors, etc. Additionally, for example, display panels having light-emitting elements such as organic EL (electroluminescence), inorganic EL, or light-emitting polymers can also be applied to the present invention in the same manner as the described embodiments. Furthermore, the present invention can also be applied to electrophoretic display panels using microcapsules containing a colored liquid and white particles dispersed in that liquid, in the same manner as the described embodiments.

Claims

1. An electro-optical device, characterized in that, The electro-optical device includes: Scan lines, which are arranged along the first direction; A data cable, which is configured along a second direction that intersects the first direction; A first constant potential line is configured along the scan line; The second constant potential line, which is arranged along the data line, has a protruding portion that protrudes in the direction along the scan line; A storage capacitor includes a first electrode having a protrusion that extends in the direction along the scan line; A first insulating layer having a first contact hole for electrically connecting the first constant potential line to the first electrode; as well as The second insulating layer has a second contact hole for electrically connecting the first electrode to a protruding portion of the second constant potential line. The first contact hole and the second contact hole are located in the region that overlaps with the protruding portion of the first electrode when viewed from above.

2. The electro-optical device according to claim 1, wherein, The storage capacitor includes: A second electrode, which overlaps with the first electrode; and A dielectric material disposed between the first electrode and the second electrode.

3. The electro-optical device according to claim 1, wherein, The storage capacitor is disposed in a layer between the first constant potential line and the second constant potential line.

4. The electro-optical device according to claim 1, wherein, The electro-optical device includes pixel electrodes. The first constant potential line and the second constant potential line are respectively disposed in the layer between the scan line and the pixel electrode.

5. The electro-optical device according to claim 4, wherein, The first constant potential line is disposed in the layer between the scan line and the storage capacitor. The second constant potential line is disposed in the layer between the data line and the pixel electrode.

6. An electro-optical device, characterized in that, The electro-optical device includes: The scan lines and the first constant potential line are arranged along the first direction; The data lines and the second constant potential line are arranged along a second direction that intersects the first direction; A storage capacitor includes a first electrode having a protruding portion projecting in a direction along the first direction; A first insulating layer having a first contact hole for electrically connecting the first constant potential line to the first electrode; as well as The second insulating layer has a second contact hole for electrically connecting the first electrode to a protruding portion of the second constant potential line. The first contact hole and the second contact hole are electrically connected to the protruding portion of the first electrode in the area where they overlap with the protruding portion of the second constant potential line when viewed from above.

7. The electro-optical device according to claim 6, wherein, The storage capacitor includes: A second electrode, which overlaps with the first electrode; and A dielectric material disposed between the first electrode and the second electrode.

8. The electro-optical device according to claim 6, wherein, The storage capacitor is disposed in a layer between the first constant potential line and the second constant potential line.

9. The electro-optical device according to claim 6, wherein, The electro-optical device includes pixel electrodes. The first constant potential line and the second constant potential line are respectively disposed in the layer between the scan line and the pixel electrode.

10. The electro-optical device according to claim 9, wherein, The first constant potential line is disposed in the layer between the scan line and the storage capacitor. The second constant potential line is disposed in the layer between the data line and the pixel electrode.

11. An electronic device, characterized in that, The electronic device comprises the electro-optical device according to any one of claims 1 to 10.

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