Substrate processing apparatus, manufacturing method of semiconductor device and storage medium

Abstract

This invention provides a substrate processing apparatus, a method for manufacturing a semiconductor device, and a storage medium that can suppress the influence between reactors on each process, even when different processes are performed in the presence of reactors. The technology includes: a first container having an inlet / outlet portion capable of moving a substrate in / out and a processing chamber for storing the substrate; a second container adjacent to the first container and communicatively connected to the first container via the inlet / outlet; a cover capable of closing the inlet / outlet; a sealing member disposed between the inlet / outlet portion and the cover; and a control unit capable of controlling the pressure in the first container to be lower than the pressure in the second container while the cover is closed during substrate processing in the processing chamber, and the pressure in the first container to be higher than the pressure in the second container after substrate processing and before the first and second containers are connected.

Description

Technical Field

[0001] This technology relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a storage medium. Background Technology

[0002] One approach to substrate processing apparatus used in the manufacturing process of semiconductor devices is a cluster-type apparatus (e.g., Patent Document 1) arranged around a vacuum transport unit of multiple reactors. Each reactor can perform different processes; for example, one reactor can perform film formation processing, while other reactors can perform modification processing. The substrate that has been processed in the reactors is moved to other reactors via a vacuum transport chamber or transported outside the substrate processing apparatus.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2005 / 112108 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] As mentioned above, there are reactors that perform different treatments, so it is desirable to suppress the effects on each treatment between the reactors.

[0008] This disclosure provides a method to suppress the influence between reactors on each process, even in the presence of reactors performing different processes.

[0009] Solution for solving the problem

[0010] According to one aspect of this disclosure, a technology is provided comprising: a first container having an inlet / outlet portion comprising an inlet / outlet for moving a substrate in / out and a processing chamber for receiving the substrate; a second container adjacent to the first container and communicatively connected to the first container via the inlet / outlet; a cover for closing the inlet / outlet; a sealing member disposed between the inlet / outlet portion and the cover; and a control unit capable of controlling such that, during processing of the substrate in the processing chamber, while the cover closes the inlet / outlet, the pressure inside the first container is lower than the pressure inside the second container, and after processing the substrate and before the first container and the second container are connected, the pressure inside the first container is higher than the pressure inside the second container.

[0011] Invention Effects

[0012] According to this disclosure, even in the presence of reactors performing different treatments, the influence between reactors on each treatment can be suppressed. Attached Figure Description

[0013] Figure 1 This is an explanatory diagram showing a schematic structural example of the substrate processing apparatus of this disclosure.

[0014] Figure 2 This is an explanatory diagram showing a schematic structural example of the substrate processing apparatus of this disclosure.

[0015] Figure 3 This is an explanatory diagram showing a schematic structural example of the reactor of this disclosure.

[0016] Figure 4A It means Figure 3 The diagram illustrates a schematic example of the structure of the first gas supply unit in the reactor shown.

[0017] Figure 4B It means Figure 3 The diagram illustrates a schematic example of the structure of the second gas supply unit in the reactor shown.

[0018] Figure 4C It means Figure 3 The diagram illustrates a schematic example of the inert gas supply unit of the reactor shown.

[0019] Figure 4D It means Figure 3 The diagram illustrates a schematic example of the inert gas supply unit of the reactor shown.

[0020] Figure 5 This is an explanatory diagram showing a schematic structural example of the reactor of this disclosure.

[0021] Figure 6 It means Figure 5 The diagram illustrates a schematic example of the structure of the first gas supply unit in the reactor shown.

[0022] Figure 7 This is an explanatory diagram illustrating the controller of the substrate processing apparatus of this disclosure.

[0023] Figure 8 This is an explanatory diagram illustrating the substrate processing flow of this disclosure.

[0024] Figure 9 This is an explanatory diagram illustrating the substrate processing flow of the implementation method.

[0025] In the picture:

[0026] S—substrate, 100—substrate processing device, 200—reactor, 300—reactor, 400—controller. Detailed Implementation

[0027] The implementation of this solution will now be described with reference to the accompanying drawings.

[0028] Furthermore, the diagrams used in the following explanation are schematic diagrams, and the dimensional relationships and ratios of the elements shown on the diagrams may not be consistent with reality. In addition, the dimensional relationships and ratios of the elements may not be consistent between multiple diagrams.

[0029] (1) Structure of the substrate processing device

[0030] use Figure 1 , Figure 2 The general structure of a substrate processing apparatus according to one embodiment of this solution will be described. Figure 1 This is a cross-sectional view showing a structural example of the substrate processing apparatus of this technology. Figure 2 An example illustrating the structure of the substrate processing apparatus of this technology is: Figure 1 Longitudinal sectional view of α-α.

[0031] Figure 1 and Figure 2 In this embodiment, the substrate processing apparatus 100 of this solution processes the substrate S, which is used as a substrate. It mainly consists of an IO worktable 110, an atmospheric transport chamber 120, a loading and locking chamber 130, a vacuum transport chamber 140, a reactor 200, and a reactor 300. Next, each structure will be described in detail.

[0032] An I / O stage (loading port) 110 is provided near the substrate processing apparatus 100. A plurality of wafer cassettes 111 are mounted on the I / O stage 110. The wafer cassettes 111 are used as carriers for transporting substrates S such as silicon (Si) substrates.

[0033] The IO workbench 110 is adjacent to the atmospheric transfer chamber 120. The atmospheric transfer chamber 120 is connected to the loading and locking chamber 130 (described later) on a side different from the IO workbench 110. An atmospheric transfer robot 122 for transferring the substrate S is installed inside the atmospheric transfer chamber 120.

[0034] An inlet / outlet 128 and a wafer cassette opener 121 are provided on the front side of the housing 127 constituting the atmospheric transport chamber 120 for moving the substrate S into / out of the atmospheric transport chamber 120. An inlet / outlet 129 for moving the substrate S into / out of the loading locking chamber 130 is provided on the rear side of the housing 127 of the atmospheric transport chamber 120. The inlet / outlet 129 is opened / closed by a gate valve 133, thereby enabling the loading and unloading of the substrate S.

[0035] The loading and locking chamber 130 is adjacent to the atmospheric transport chamber 120. A vacuum transport chamber 140, described later, is disposed on a surface of the housing 131 constituting the loading and locking chamber 130 that is different from the atmospheric transport chamber 120. The vacuum transport chamber 140 is connected via a gate valve 134.

[0036] A substrate mounting stage 136 with at least two mounting surfaces 135 for mounting substrates S is provided inside the loading and locking chamber 130. The distance between the mounting surfaces 135 is set according to the distance between the end effectors of the arm of the transport robot 180 described later.

[0037] The substrate processing apparatus 100 includes a vacuum transfer chamber 140, which serves as a transfer space for transferring substrates S under negative pressure. The housing 141 constituting the vacuum transfer chamber 140 is pentagonal in plan view, and a loading and locking chamber 130 and reactors 200 (200a, 200b, and 200c) and reactor 300 for processing the substrates S are connected to each side of the pentagon. A transfer robot 180, serving as a transfer unit for transferring (transferring) the substrates S under negative pressure, is disposed approximately at the center of the vacuum transfer chamber 140 with a flange 144 as its base.

[0038] The transport robot 180, installed within the vacuum transport chamber 140, is configured to maintain the airtightness of the vacuum transport chamber 140 via a lift 145 and a flange 144, and is capable of vertical movement. The two arms 181 of the transport robot 180 are configured to move vertically via the lift 145. Furthermore, Figure 2 For ease of explanation, the end effector of arm 181 is shown in the image, while the robot axis and other structures connected to flange 144 are omitted.

[0039] Reactors 200 (200a, 200b, and 200c) and reactor 300 are connected to the outer periphery of the vacuum transfer chamber 140. The reactors 200 and 300 are arranged radially around the vacuum transfer chamber 140.

[0040] Inlet / outlet ports 148 are provided on the side walls of the housing 141 facing each reactor 200 and the side walls facing each reactor 300, respectively. For example, Figure 2As shown, an inlet / outlet 148a is provided on the wall facing reactor 200a. Furthermore, since reactors 200b and 200c have the same structure as reactor 200a, their description is omitted here. Additionally, for example, an inlet / outlet 148d and a gate valve 149 are provided on the wall facing reactor 300. Each reactor 200 and reactor 300 is connected to the vacuum transfer chamber 140; therefore, each reactor 200 and reactor 300 are also used under vacuum to prevent the atmosphere of the vacuum transfer chamber 140 from flowing into the reactors. When the substrate S is transferred in / out between the vacuum transfer chamber 140 and each reactor, pressure adjustment is further performed through each reactor.

[0041] Next, the conveying robot 180 mounted in the vacuum conveying chamber 140 will be described.

[0042] The transport robot 180 has two arms 181. Each arm 181 has an end effector that carries a substrate S.

[0043] The lifting mechanism 145 controls the lifting and rotation of the arm 181. The arm 181 is capable of rotating and extending about its axis. By rotating and extending, the substrate S is transported into or out of the reactors 200 and 300.

[0044] <Reactor 200 (Batch Unit)>

[0045] Next, use Figure 3 Reactors 200a, 200b, and 200c will be described below. Since reactors 200a, 200b, and 200c have the same structure, they will be described as a single reactor 200. Each reactor 200 is configured to perform multiple processes. Details are described below.

[0046] The housing 201 constituting the reactor 200 has a reaction tube receiving chamber 210 at the top and a transfer chamber 270 at the bottom. The reaction tube receiving chamber 210 mainly houses a heater 211 and an inner reaction tube 222. The transfer chamber 270 is designed to communicate with a vacuum transfer chamber 140. The transfer chamber 270 is provided with inlet / outlet ports 148 (148a, 148b, 148c) for transferring in / out of the substrate S. The inlet / outlet ports 148 are opened and closed by gate valves 149. The heater 211 is disposed separately from the wall of the inner reaction tube 222, which is a wall of a vertically extending processing chamber 222c. The heater 211 is also referred to as a first heater or a wall-side heater.

[0047] The transfer chamber 270 is located at the lower part of the inner reaction tube 222 and is configured to communicate with the inner reaction tube 222. In the transfer chamber 270, the substrate S is placed (mounted) on the substrate support (hereinafter sometimes referred to as the crystal boat) 240 via the transfer inlet / outlet 148 by the transfer robot 180, or the substrate S is removed from the substrate support 240 by the transfer robot 180.

[0048] <Reaction tube>

[0049] Next, the reaction tube housing 210 and the inner reaction tube 222 housed within it will be described. The inner reaction tube 222 includes an outer reaction tube 221 and an inner reaction tube 222. The inner reaction tube 222 is housed inside the outer reaction tube 221. In this embodiment, the outer reaction tube 221 and the inner reaction tube 222 are collectively referred to as the first container.

[0050] The outer reaction tube 221 is located between the inner reaction tube 222 and the heater 211. Figure 3 The configuration separates the atmosphere inside the outer reaction tube 221 from the atmosphere inside the inner reaction tube 222. The space in the outer reaction tube 221 that houses the inner reaction tube 222 is called the inner reaction tube housing chamber 221b. However, the configuration is not limited to this; the atmosphere inside the outer reaction tube 221 and the atmosphere inside the inner reaction tube 222 can also be connected.

[0051] A flange portion 221a is provided below the outer reaction tube 221. The flange portion 221a is fixed to the wall constituting the reaction tube receiving chamber 210. A hole is provided at the center of the flange portion 221a, and the flange portion 222a of the inner reaction tube 222 is inserted and fixed here. The flange portion 221a and the flange portion 222a are collectively referred to as the furnace opening portion 222b.

[0052] The upper part of the inner reaction tube 222 is closed, and a flange portion 222a is provided at the lower part. A furnace opening portion 222b for the substrate support member 240 to pass through is provided at the center of the flange portion 222a. That is, the flange portion 222a is located below the wall constituting the inner reaction tube 222 and extending vertically. The furnace opening portion 222b, through which the substrate support member 240 passes, is therefore also called an inlet / outlet. Furthermore, the flange portion 222a and the furnace opening portion 222b are collectively referred to as the inlet / outlet portion. The furnace opening portion 222b may also be included within the flange portion 222a.

[0053] The inner reaction tube 222 can accommodate the substrate S supported on the substrate support 240. A nozzle 223 serving as a gas supply section is provided in the inner reaction tube 222. The nozzle 223 is configured to extend in the vertical direction that is the arrangement direction of the multiple substrates S. Gas supplied from the nozzle 223 is supplied to each substrate S.

[0054] The nozzles 223 are arranged according to the type of gas; here, as an example, three nozzles 223a, 223b, and 223c are described. Each nozzle 223 is arranged in a manner that does not overlap in the horizontal direction. Furthermore, in Figure 3 For ease of explanation, three nozzles 223 are described, but it is not limited to this, and more than four nozzles may be configured depending on the substrate processing.

[0055] Next, use Figure 4A , Figure 4B , Figure 4C as well as Figure 4D The gas supply section capable of supplying gas to each nozzle 223 will be described. In this embodiment, the first gas supply section and the second gas supply section, which will be described later, will be collectively referred to as the gas supply section.

[0056] First, use Figure 4A The first gas supply unit 224, which supplies gas to the nozzle 223a, will be described. In the gas supply pipe 224a, starting from the upstream direction, a first gas source 224b, a mass flow controller (MFC) 224c (flow control unit), and a valve 224d (on / off valve) are sequentially arranged. The gas supply pipe 224a is configured to communicate with the nozzle 223a.

[0057] The first gas source 224b is a first gas source containing a first element (also called "gas containing the first element"). The gas containing the first element is a type of feed gas, i.e., a process gas. Here, the first element is, for example, silicon (Si). Specifically, it is a chlorosilane feed gas containing Si-Cl bonds, such as hexachlorosilane (Si2Cl6, abbreviated as HCDS), monochlorosilane (SiH3Cl, abbreviated as MCS), dichlorosilane (SiH2Cl2, abbreviated as DCS), trichlorosilane (SiHCl3, abbreviated as TCS), tetrachlorosilane (SiCl4, abbreviated as STC), and octachlorotrisilane (Si3Cl8, abbreviated as OCTS).

[0058] The first gas supply section (also known as the silicon-containing gas supply section) 224 is mainly composed of gas supply pipe 224a, MFC 224c, and valve 224d.

[0059] A gas supply pipe 224e is connected downstream of valve 224d in gas supply pipe 224a. In gas supply pipe 224e, starting from the upstream direction, an inert gas source 224f, an MFC 224g, and a valve 224h are sequentially arranged. An inert gas, such as nitrogen (N2), is supplied from the inert gas source 224f.

[0060] The first inert gas supply unit mainly consists of gas supply pipe 224e, MFC 224g, and valve 224h. The inert gas supplied from inert gas source 224f is used as a carrier gas or dilution gas for the first gas in the substrate processing process. The first inert gas supply unit can also be added to the first gas supply unit.

[0061] Next, use Figure 4B The second gas supply unit 225, which supplies gas to the nozzle 223b, will be described. In the gas supply pipe 225a, from upstream, a second gas source 225b, an MFC 225c, and a valve 225d are sequentially arranged. The gas supply pipe 225a is configured to communicate with the nozzle 223b.

[0062] The second gas source 225b is a second gas source containing a second element (hereinafter also referred to as "second element-containing gas"). The second element-containing gas is a type of process gas. Furthermore, the second element-containing gas can also be considered as a reactant gas or a modifying gas.

[0063] Here, the gas containing the second element contains a second element different from the first element. The second element can be, for example, any one of oxygen (O), nitrogen (N), or carbon (C). In this embodiment, the gas containing the second element is, for example, a nitrogen-containing gas. Specifically, it is a hydrogen nitride gas containing N-H bonds, such as ammonia (NH3), diimine (N2H2), hydrazine (N2H4), or N3H8.

[0064] The second gas supply section (also known as the reaction gas supply section) 225 is mainly composed of gas supply pipe 225a, MFC 225c and valve 225d.

[0065] A gas supply pipe 225e is connected downstream of valve 225d in gas supply pipe 225a. In gas supply pipe 225e, starting from the upstream direction, an inert gas source 225f, an MFC 225g, and a valve 225h are sequentially arranged. Inert gas is supplied from inert gas source 225f.

[0066] The second inert gas supply unit mainly consists of gas supply pipe 225e, MFC 225g, and valve 225h. The inert gas supplied from inert gas source 225f is used as a carrier gas or dilution gas for the second gas in the substrate processing process. The second inert gas supply unit can also be added to the second gas supply unit 225.

[0067] Next, use Figure 4CThe inert gas supply unit 226, which supplies gas to the nozzle 223c, will be described. In the gas supply pipe 226a, from upstream, an inert gas source 226b, an MFC 226c, and a valve 226d are sequentially arranged. The inert gas supplied from the inert gas source 226b is used, for example, as a purifying gas to purify the atmosphere inside the inner reaction tube 222, or as a pressure regulating gas to adjust the pressure of the inner reaction tube 222. The gas supply pipe 226a is configured to communicate with the nozzle 223c.

[0068] The exhaust section 230, which discharges the atmosphere from the inner reaction tube 222, has an exhaust pipe 231 that communicates with the inner reaction tube 222.

[0069] In the exhaust pipe 231, a vacuum pump (not shown) serving as a vacuum exhaust device is connected via a valve 232 (which acts as an on / off valve) and an APC (Auto Pressure Controller) valve 233 (which acts as a pressure regulator). This connection is configured to perform vacuum exhaust, thereby bringing the pressure within the inner reaction tube 222 to a predetermined pressure (vacuum level). A pressure detection unit 234 is provided in the exhaust section 230. The pressure detection unit 234 has the function of detecting the pressure within the inner reaction tube 222. Furthermore, to distinguish it from the exhaust section provided in the transfer chamber 270 described later, it is also referred to as the processing chamber exhaust section.

[0070] The pressure inside the inner reaction tube 222 is adjusted through the cooperation of the gas supply section and the exhaust section described above. When adjusting the pressure, for example, the pressure value detected by the pressure detection section 234 is adjusted to a predetermined value. Since the atmosphere inside the first container can be adjusted in this way through the gas supply section and the exhaust section, in this embodiment, the gas supply section and the exhaust section are collectively referred to as the first atmosphere control section.

[0071] The area within the inner reaction tube 222 that houses the substrate S is called the processing area, and the dividing element constituting the processing area is called the processing chamber 222c. In this embodiment, the processing chamber 222c is constituted by the inner reaction tube 222.

[0072] <Substrate Support (Crystal Boat)>

[0073] The substrate support section is composed of at least a substrate support member 240. The substrate support member 240 transfers the substrate S inside the transfer chamber 270 via the inlet / outlet 148 using a transfer robot 180. Furthermore, the substrate support member 240 transports the transferred substrate S to the interior of the inner reaction tube 222. Then, inside the inner reaction tube 222, processes such as forming a thin film on the surface of the substrate S are performed.

[0074] The substrate support member 240 includes a lifting part 241, which serves as a first driving part for driving the substrate support member 240 in the vertical direction. Figure 3 The diagram shows the substrate support 240 being raised by the lifting part 241 and housed within the inner reaction tube 222. Furthermore, the substrate support 240 includes a rotation drive part 242, which serves as a second drive part for rotating the substrate support 240.

[0075] Each drive unit is connected to the rotation shaft 243 of the support platform 244. Multiple support columns 246 capable of supporting the substrate S are provided on the support platform 244. The support columns 246 support the top plate 249. Figure 3 For ease of explanation, a support column 246 is described. Multiple substrate support mechanisms are arranged at predetermined intervals in the vertical direction on the support column 246, and multiple substrates S are supported by each substrate support mechanism. A heat insulation cover 245 covers the area below the multiple support columns 246. The heat insulation cover 245 suppresses the movement of heat from the substrate processing area towards the vicinity of the furnace opening 222b, thereby achieving homogenization of the substrate processing area.

[0076] The substrate support member 240 supports multiple substrates S, for example, five substrates S, in a vertical direction to form multiple layers via multiple support pillars 246. The top plate 249 and the multiple support pillars 246 are formed of materials such as quartz and SiC. Furthermore, this example shows a substrate support member 240 supporting seven substrates S, but it is not limited to this. For example, the substrate support member 240 may be configured to support approximately 5 to 50 substrates S.

[0077] The substrate support 240 moves vertically between the inner reaction tube 222 and the transfer chamber 270 via the lifting part 241, and is driven in the rotational direction around the center of the substrate S supported by the substrate support 240 via the rotation drive part 242b.

[0078] A cover 247, which seals the furnace opening 222b, is fixed to the rotating shaft 243 via a fixing part 247a. The diameter of the cover 247 is larger than the diameter of the furnace opening 222b. A heater 247b is provided on the cover 247 to heat the cover 247. An O-ring 248, serving as a sealing member, is provided on the flange 222a of the inner reaction tube 222. The heater 247b is an auxiliary structure for ensuring uniform temperature in the vertical direction of the inner reaction tube 222. By turning on the heater 247b, the temperature of the substrate S positioned below the substrate support 240 can be maintained at the same level as the temperature positioned above it. The heater 247b is also referred to as a second heater or a cover-side heater.

[0079] The cover 247 closes the furnace opening 222b, for example, during the processing of the substrate S. When the cover 247 closes the furnace opening 222b, as... Figure 3As shown, the lifting unit 241 raises the cover 247 so that the upper surface of the cover 247 is positioned to abut against the flange 222a. This ensures that the interior of the inner reaction tube 222 remains airtight. Furthermore, as described later, in this design, the pressure inside the transfer chamber 270 is set higher than the pressure inside the processing chamber 222c, causing the O-ring 248 to be flattened and deformed, and pressed against the flange 222a.

[0080] Furthermore, in this design, the O-ring 248 is disposed on the flange portion 222a of the inner reaction tube 222, but it is not limited thereto and can also be disposed on the flange portion 221a of the outer reaction tube 221. In this case, the diameter of the cover 247 is configured to be larger than that of the O-ring 248 disposed on the flange portion 221a of the outer reaction tube 221. Alternatively, the O-ring 248 can be disposed on the cover 247. In this case, when replacing the O-ring 248, each cover 247 can be replaced, thus providing the advantage of easy maintenance.

[0081] <Transfer Room>

[0082] The transfer chamber 270 will be described below. The transfer chamber 270 is located at the lower part of the reaction tube receiving chamber 210. In the transfer chamber 270, substrates S are placed (mounted) on substrate support 240 via inlet / outlet 148 by a transfer robot 180, or substrates S are removed from substrate support 240 by the transfer robot 180. The transfer chamber 270 is also referred to as a second container.

[0083] A hole is provided in the bottom wall of the transfer chamber 270 for the rotating shaft 243 to pass through. Furthermore, an exhaust section 280 is provided in the transfer chamber 270 to discharge the atmosphere inside. The exhaust section 280 is connected to the transfer chamber 270 and has an exhaust pipe 281 communicating with its interior.

[0084] A vacuum pump (not shown) serving as a vacuum exhaust device is connected to the exhaust pipe 281 via valve 282 (which acts as an on / off valve) and APC valve 283. This system is configured to perform vacuum exhaust, bringing the pressure inside the transfer chamber 270 to a predetermined pressure (vacuum level). The exhaust section 280 is also referred to as the transfer chamber exhaust section. A pressure detection section 284 is provided in the exhaust section 280. The pressure detection section 284 has the function of detecting the pressure inside the transfer chamber 270. Thus, the exhaust section 280 can control the atmosphere inside the transfer chamber 270, and is therefore also referred to as the second atmosphere control section.

[0085] It can also be connected to the transfer chamber 270. Figure 4D The inert gas supply unit 271 is shown. (As shown) Figure 4DAs shown, in the gas supply pipe 271a, starting from the upstream direction, an inert gas source 271b, an MFC 271c, and a valve 271d are sequentially arranged. The inert gas supplied from the inert gas source 271b is used, for example, to purify the atmosphere in the transfer chamber 270 or to adjust the pressure. The inert gas supply unit 271 is also referred to as the third gas supply unit. The inert gas supply unit 271 can control the atmosphere in the transfer chamber 270 together with the exhaust unit 280, therefore, the inert gas supply unit 271 can also be included in the second atmosphere control unit.

[0086] <Reactor 300 (Single Plate)>

[0087] Next, use Figure 5 The reactor 300 is described below. For example... Figure 5 As shown, the reactor 300 includes a container 302. Within the container 302 are formed a processing chamber 301 that constitutes a processing space 305 for processing the substrate S; and a transport chamber 306 that has a transport space through which the substrate S passes when being transported to the processing space 305. The container 302 consists of an upper container 302a and a lower container 302b. A partition 308 is provided between the upper container 302a and the lower container 302b. The container 302 is also referred to as a third container.

[0088] A transfer inlet / outlet 148 adjacent to the gate valve 149 is provided on the side of the lower container 302b, and the substrate S moves between the vacuum transfer chamber 140 via the transfer inlet / outlet 148. A plurality of ejector pins 307 are provided at the bottom of the lower container 302b.

[0089] A substrate support portion 310 for supporting the substrate S is disposed in the processing space 305. The substrate support portion 310 has a substrate mounting surface 311 for mounting the substrate S, a substrate mounting stage 312 having the substrate mounting surface 311 on its surface, and a heater 313 serving as a heating portion disposed within the substrate mounting stage 312. Through holes 314 for the ejector pin 307 to pass through are provided at positions on the substrate mounting stage 312 corresponding to the ejector pin 307.

[0090] A power supply cable 322 is connected to the heater 313. The power supply cable 322 is connected to the heater control unit 323. The heater control unit 323 is electrically connected to the controller 400. The controller 400 controls the heater control unit 323 to operate the heater 313.

[0091] The substrate mounting stage 312 is supported by a rotation shaft 317. The rotation shaft 317 passes through the bottom of the container 302 and is connected to the lifting part 318 outside the container 302.

[0092] By operating the lifting unit 318, the rotating shaft 317 and the substrate mounting stage 312 are raised and lowered, and the substrate mounting stage 312 can raise and lower the substrate S placed on the substrate mounting surface 311.

[0093] The processing chamber 301 may be composed of, for example, the plasma generation chamber 330 and the substrate mounting stage 312 described later. Alternatively, the processing chamber 301 may be constructed in any other way as long as it can provide a processing space 305 for processing the substrate S.

[0094] During the transport of substrate S, the substrate mounting stage 312 descends to the transport position P0 opposite the substrate mounting surface 311 and the transport in / outlet 148. During the processing of substrate S, such as... Figure 5 As shown, it rises to make the substrate S a processing position within the processing space 305.

[0095] A plasma generation chamber 330 is provided in the upper part (upstream side) of the processing space 305 to convert gas into a plasma state. A fourth gas supply unit 340 (described later) is connected to the cover 331 of the plasma generation chamber 330 in a manner communicating with a gas inlet 331a provided in the cover 331 of the plasma generation chamber 330. A coil 332 is arranged around the plasma generation chamber 330. Electrodes (not shown) are connected to the coil 332, and by supplying electricity from the electrodes, the gas supplied to the plasma generation chamber 330 is converted into a plasma state.

[0096] Next, the exhaust section 391 will be described. The exhaust pipe 392 communicates with the processing space 305. The exhaust pipe 392 is connected to the upper container 302a in a manner that communicates with the processing space 305. A pressure controller, APC 393, is provided in the exhaust pipe 392 to control the pressure within the processing space 305 to a predetermined level. The APC 393 has a valve core (not shown) capable of adjusting its opening, and adjusts the flow direction of the exhaust pipe 392 according to instructions from the controller 400. A valve 394 is provided downstream of the APC 393 in the exhaust pipe 392. An oil-free pump (not shown) is provided upstream of the exhaust pipe 392. The oil-free pump discharges the atmosphere from the processing space 305 via the exhaust pipe 392.

[0097] Next, use Figure 6 The fourth gas supply unit 340, which supplies gas to the processing chamber 301, will be described.

[0098] In the gas supply pipe 341, starting from the upstream direction, a fourth gas source 342, an MFC 343 serving as a flow controller (flow control unit), and a valve 344 serving as an on / off valve are sequentially arranged. Furthermore, an inert gas supply pipe 345 is connected to the gas supply pipe 341. In the inert gas supply pipe 345, starting from the upstream direction, an inert gas source 346, an MFC 347, and a valve 348 serving as an on / off valve are sequentially arranged.

[0099] The fourth gas source 342 is a third gas source containing a third element (also called a "third element-containing gas"). The third element-containing gas is, for example, a gas that reacts with the film formed on the substrate S. The third gas can also be considered as a modifying gas.

[0100] Here, the third element is, for example, any one of oxygen (O), nitrogen (N), carbon (C), and hydrogen (H). Here, a gas containing the third element is described, for example, as a hydrogen-containing gas. Specifically, hydrogen gas (H2) is used as the hydrogen-containing gas.

[0101] When supplying a third gas to the processing chamber 301, an inert gas, which can be used as a dilution gas or a carrier gas, may also be supplied to the processing chamber 301.

[0102] The fourth gas supply section mainly consists of gas supply pipe 341, MFC 343, and valve 344. Alternatively, an inert gas supply section consisting of inert gas supply pipe 345, MFC 347, and valve 348 can be added to the fourth gas supply section.

[0103] <Controller>

[0104] Next, use Figure 7 The controller 400 is described below.

[0105] The substrate processing apparatus 100 has a controller 400 that controls the operation of each part.

[0106] The controller 400, serving as a control unit (control unit), is configured as a computer including a CPU (Central Processing Unit) 401, RAM (Random Access Memory) 402, a storage unit 403 as a storage device, and an I / O port 404. The RAM 402, storage unit 403, and I / O port 404 are configured to exchange data with the CPU 401 via an internal bus 405. Data reception / transmission within the board processing apparatus 100 is performed via instructions from a receive / transmit instruction unit 406, which functions as a feature of the CPU 401.

[0107] CPU 401 is configured to read and execute control programs from storage unit 403, and to read process recipes from storage unit 403 based on inputs such as operation instructions from input / output device 423. Furthermore, CPU 401 is configured to control, for example, the opening and closing of gate valve 149, the on / off control of each pump, the flow adjustment of MFC, and the opening and closing of valves, in accordance with the content of the read process recipe.

[0108] The storage unit 403 is composed of, for example, a flash memory or an HDD (Hard Disk Drive). The storage unit 403 contains a formula 410, which is composed of a process formula that records the sequence and conditions of substrate processing, and a control program 411 that controls the operation of the substrate processing apparatus.

[0109] Furthermore, the process formula combines the various sequences of the substrate processing steps described later, executed by the time controller 400, in a manner that enables the achievement of predetermined results, and functions as a program. This process formula exists, for example, according to a reactor, and is read out according to each reactor.

[0110] Hereinafter, the process formulation, control program, etc., will be collectively referred to as "program". Furthermore, in this specification, the term "program" may be used in cases where it only includes the process formulation, only includes the control program, or includes both. Additionally, RAM402 is configured as a storage area (working area) for temporarily holding programs, data, etc., read by CPU401.

[0111] I / O port 404 is connected to gate valve 149, pressure regulators, pumps, heater control units, and other structures. Additionally, a network receiver / transmitter 421 connected via a network is provided in the host device 420.

[0112] Furthermore, the controller 400 can be configured to install the program onto a computer or the like using an external storage device 422 storing the aforementioned program, thus constituting the controller 400 of this technology. Examples of external storage devices 422 include hard disks such as hard disks, optical discs such as DVDs, optical disks such as MO drives, and semiconductor memories such as USB flash drives. Furthermore, the method for supplying programs to a computer is not limited to supplying them via the external storage device 422. For example, communication units such as the Internet or dedicated lines can be used to supply programs without using the external storage device 422. Furthermore, the storage unit 403 and the external storage device 422 constitute a computer-readable storage medium. Hereinafter, they will be collectively referred to as storage medium. In this specification, the term storage medium may be used in cases where only the storage unit 403 is included, in cases where only the external storage device 422 is included, or in cases where both are included.

[0113] (2) Substrate processing process

[0114] Next, use Figure 8 The substrate processing steps will be described. As a step of the substrate processing apparatus, the process of processing the substrate S using the substrate processing apparatus 100 with the above-described structure will be described. Furthermore, in the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 400.

[0115] (Substrate moving process S202)

[0116] The substrate moving process S202 will be described. The substrate handling apparatus 100 receives a FOUP containing multiple substrates S from a robot in the factory. An atmospheric transport robot 122 picks up the substrates S from the FOUP and moves them into a loading and locking chamber 130. In the loading and locking chamber 130, the atmosphere is replaced from atmospheric pressure to a pressure equal to that of the vacuum transport chamber 140. Then, a gate valve 134 is opened, and a transport robot 180 picks up the substrates S from the loading and locking chamber 130.

[0117] (Substrate handling process S204)

[0118] The transfer robot 180 moves the substrate S from the vacuum transfer chamber 140 to any reactor 200. At this time, the pressure inside the transfer chamber 270 is set to be equal to or lower than the pressure inside the vacuum transfer chamber 140, so that the atmosphere inside the transfer chamber 270 does not flow into the vacuum transfer chamber 140. Here, for example, the exhaust section 280 is controlled to adjust the pressure inside the transfer chamber 270.

[0119] Next, with the substrate support 240 lowered into the transfer chamber 270, the gate valve 149 of the reactor 200 is opened. At this time, the height of the substrate support 240 is adjusted, for example, so that the uppermost substrate support mechanism in the substrate support 240 and the inlet / outlet 148 are at the same height.

[0120] The transport robot 180 extends its arm 181 to support the substrate on the uppermost substrate support mechanism. Then, it retracts its arm 181 to close the gate valve 149 of the reactor 200.

[0121] After the substrate S is mounted on the substrate support mechanism, the height of the substrate support 240 is adjusted so that the substrate support mechanism below which the substrate is already supported and the loading / unloading outlet 148 are at the same height. On the other hand, the transfer robot 180 is ready to pick up a new substrate S that has been put into the loading locking chamber 130 and move the substrate S into the reactor 200. Then, as described above, the gate valve 149 is opened, and the transfer robot 180 places the substrate S on the substrate support 240.

[0122] This action is repeated a predetermined number of times to load a predetermined number of substrates S onto the substrate support 240. After loading the predetermined number of substrates S, the gate valve 149 is closed, and then the substrate support 240 is raised, as if... Figure 3 The substrate is moved into the inner reaction tube 222 as shown. At this time, the cover 247 and the substrate support 240 rise together, and the O-ring 248 is pressed against the cover 247. Thus, the inner reaction tube 222 is sealed. In addition, the heater 211 is in operation and is maintained at the substrate processing temperature, which will be described later.

[0123] Next, through the cooperation of the inert gas supply unit 226 and the exhaust unit 230, the pressure inside the inner reaction tube 222 is brought to a predetermined pressure. Furthermore, in parallel, the inert gas supply unit 271 and the exhaust unit 280 are controlled to ensure that the pressure inside the transfer chamber 270 is higher than that inside the inner reaction tube 222. In this way, the movement of atmosphere from the inner reaction tube 222 into the transfer chamber 270 can be suppressed.

[0124] (First membrane treatment process S206)

[0125] Next, the first film processing step S206 will be described. The first film processing step S206 is a process of processing the film formed on the substrate S within the reactor 200. After the processing chamber 301, which is formed by the inner reaction tube 222, reaches the desired pressure, the first gas supply unit 224 and the second gas supply unit 225 are controlled to supply a first gas and a second gas into the inner reaction tube 222 to process the substrate S. This processing refers to, for example, reacting the first gas and the second gas to form a predetermined film on the substrate S. In this embodiment, for example, HCDS is supplied as the first gas and NH3 gas is supplied as the second gas to form a silicon nitride (SiN) film. At this time, with the substrate S closed, the inert gas supply unit 271 and the exhaust unit 280 are controlled to maintain a pressure in the transfer chamber 270 that is higher than the pressure in the inner reaction tube 222. In this way, even during processing, movement of the cover 247 can be suppressed. Therefore, the movement of the atmosphere in the inner reaction tube 222 into the transfer chamber 270 can be suppressed.

[0126] In this process, the treatment is carried out, for example, under the following conditions.

[0127] First gas: HCDS

[0128] Gas supply rate for the first gas: 5 sccm ~ 5000 sccm

[0129] Second gas: NH3

[0130] Second gas supply rate: 10 sccm ~ 10000 sccm

[0131] Pressure in the processing chamber: 133 Pa ~ 13332 Pa

[0132] Processing temperature: 300℃~500℃

[0133] After a predetermined time has elapsed, the first gas supply unit 224 and the second gas supply unit 225 are stopped. Further, inert gas is supplied from the inert gas supply unit 226 to exhaust the atmosphere within the processing chamber 301.

[0134] (Substrate removal process S208)

[0135] The substrate removal process S208 will be described. After a predetermined time, the lifting unit 241 lowers the substrate support 240. At the same time, the cover 247 also lowers and separates from the furnace opening 222b. The specific details of the lowering method will be described later. After the substrate support 240 lowers, the substrate is removed using the method opposite to that used for loading the substrate S. At this time, it is desirable to open the gate valve 149 while the substrate support 240 is stopped. This can suppress the formation of turbulence in the atmosphere within the transfer chamber 270 caused by the movement of the substrate support 240. Furthermore, it is desirable that the pressure relationship between each space is: pressure in the inner reaction tube 222 > pressure in the transfer chamber 270 < pressure in the vacuum transfer chamber 140. This can suppress the flow of atmosphere from the inner reaction tube 222 to the vacuum transfer chamber 140. This can suppress contamination within the vacuum transfer chamber 140. Therefore, it is possible to suppress the intrusion of gas used in the inner reaction tube 222 into the reactor 300, and to suppress unexpected reactions in the reactor 300, such as the formation of a membrane on the inner wall of the container.

[0136] (Substrate moving process S210)

[0137] Next, the substrate moving process S210 will be described. A transfer robot 180 carrying a substrate S taken out from the reactor 200 moves the substrate S so that it can move the substrate S into the reactor 300.

[0138] (Substrate handling process S212)

[0139] The substrate loading process S212 will be described. Here, substrate S is loaded into reactor 300. At this time, substrate stage 312 is lowered to the loading position of substrate S, and ejector pin 307 passes through the through hole 314 of substrate stage 312. As a result, ejector pin 307 protrudes a predetermined height from the surface of substrate stage 312. In parallel with these operations, inert gas is supplied from the fourth gas supply unit and the atmosphere in the transport chamber 306 is discharged, so that the pressure is equal to or below that of the adjacent vacuum transport chamber 140.

[0140] Next, the gate valve 149 is opened, connecting the transfer chamber 306 to the adjacent vacuum transfer chamber 140. Then, the transfer robot 180 moves the substrate S from the vacuum transfer chamber 140 into the transfer chamber 306 and places it on the ejector pin 307. After placing the substrate S on the ejector pin 307, the substrate mounting stage 312 is raised, placing the substrate S on the substrate mounting surface 311. Then, as... Figure 5 As shown, the substrate stage 312 is raised to the substrate processing position. When the substrate S is placed on the substrate placement surface 311, power is supplied to the heater 313 and the heater 313 is controlled to bring the surface of the substrate S to a predetermined temperature.

[0141] (Second membrane treatment process S214)

[0142] The second film processing step S214 will be described. Here, for example, the exhaust unit 391 and the fourth gas supply unit 340 are operated. After reaching the desired pressure, the fourth gas supply unit 340 is controlled to supply a third gas to the processing chamber 301 to process the film on the substrate S. The film processing refers to, for example, modifying the film formed in the first film processing step S206 using the third gas. Additionally, in this step, the plasma generation unit 349 may also be operated according to the formula. In this embodiment, H2 gas is supplied to the SiN film formed in the first film processing step S206 to modify the SiN film.

[0143] In this process, the treatment is carried out under conditions such as the following.

[0144] Third gas: H2

[0145] The gas supply rate of the third gas: 10 sccm ~ 500 sccm

[0146] Pressure in the processing chamber: 133 Pa ~ 6666 Pa

[0147] Processing temperature: 100℃~600℃

[0148] After a predetermined time has elapsed, the supply of the third gas from the fourth gas supply unit 340 is stopped. Then, inert gas is supplied from the fourth gas supply unit 340 to purge the atmosphere from the processing chamber 301.

[0149] (Substrate removal process S216)

[0150] The substrate removal process S216 will be described. After the desired processing is performed on the substrate S, the substrate S is removed from the processing chamber 222c in the reverse order of the substrate loading process S212. At this time, the substrate S is supported by the transfer robot 180.

[0151] (Substrate moving process S218)

[0152] The substrate moving process S218 will be described. The transfer robot 180 removes the substrate S from the reactor 300 and further moves it to the loading and locking chamber 130. The substrate S is processed as described above.

[0153] <Details of the descent method in substrate removal process S208>

[0154] Next, details of the method for lowering the substrate support 240 in the substrate removal process S208 will be explained. As described above, in the first film processing process S206 prior to the substrate removal process S208, the pressure inside the transfer chamber 270 is controlled to be higher than the pressure inside the inner reaction tube 222. With this control, the cover 247 is pressed against the furnace opening 222b, thus suppressing leakage of the atmosphere inside the inner reaction tube 222. Therefore, the atmosphere inside the inner reaction tube 222 can be stably controlled.

[0155] However, in this situation, the present inventors have discovered the following problem. Here, the cover 247 is pressed against the furnace opening 222b, causing the O-ring 248 disposed between the cover 247 and the furnace opening 222b to be compressed and deformed. With the O-ring 248 fixed to the furnace opening 222b, the O-ring 248 adheres to the cover 247 in a deformed state. Moreover, the higher the temperature, the stronger the adhesion of the O-ring 248. The O-ring 248 is affected by the heater 211 and the heater 247b, and therefore sometimes adheres firmly. If the cover 247 is lowered while the O-ring 248 is attached to it, the O-ring 248 may break due to the strength of the adhesion, raising concerns about the generation of particles. One objective of this solution is to lower the cover 247 while suppressing the breakage of the O-ring 248.

[0156] Next, use Figure 9 To provide more specific details.

[0157] (Pressure adjustment process S302)

[0158] This process is performed before the substrate support 240 is lowered and before the inner reaction tube 222 and transfer chamber 270 are connected. After the substrate S is processed in the inner reaction tube 222 in the first film processing step S206, the supply of processing gas to the inner reaction tube 222 is stopped. Then, before connecting the inner reaction tube 222 and transfer chamber 270, control is performed to ensure that the pressure in the inner reaction tube 222 is higher than the pressure in the transfer chamber 270. Here, the inert gas supply unit 226, exhaust unit 230, inert gas supply unit 271, and exhaust unit 280 are adjusted. At this time, the pressure can also be adjusted using the pressure detection unit 234 and pressure detection unit 284.

[0159] By controlling the pressure within the inner reaction tube 222 to be higher than the pressure within the transfer chamber 270, the atmosphere within the inner reaction tube 222 can be gently pushed out of the cover 247. At this point, the pressure difference between the inner reaction tube 222 and the transfer chamber 270 is such that the O-ring 248 will not break. Specifically, the pressure difference is in the range of being higher than 0 Pa and lower than 3.0 kPa. Therefore, breakage of the O-ring 248 attached to the cover 247 can be suppressed, and the shape of the O-ring 248 can be restored. Furthermore, at this point, the O-ring 248 is in a state where it does not separate from the cover 247, but rather seals the atmosphere within the inner reaction tube 222.

[0160] When adjusting the pressure difference, the pressure inside the inner reaction tube 222 can be gradually made higher than the pressure in the transfer chamber 270. In this way, no sudden force is applied to the deformed O-ring 248, which can reliably suppress the breakage of the O-ring 248 and restore the shape of the O-ring 248.

[0161] Before or during pressure differential adjustment, the temperature of the O-ring 248 can be lowered by disconnecting the heater 211 or reducing the power, resulting in a second temperature lower than the first temperature during substrate S processing. Lowering the temperature eases the adhesion of the O-ring 248, allowing it to be easily peeled off the cover 247. While the heater 211 has been described as an example, if a heater 247b is included, it can also be disconnected or its power reduced.

[0162] Furthermore, it is desirable that the second temperature be below the heat resistance temperature of the transfer robot 180. As mentioned above, the transfer chamber 270 and the vacuum transfer chamber 140 are set to a vacuum level, resulting in low heat dissipation efficiency from the substrate S. That is, the temperature of the substrate S is difficult to lower. With the heaters 211 and 247b maintaining a high temperature, it is necessary to wait in the transfer chamber 270 to keep the temperature of the substrate S from decreasing, which leads to a significant reduction in transfer throughput. When the substrates S are stacked as in this embodiment, the substrate temperature is even more difficult to lower due to the thermal influence between the substrates S. Therefore, by setting it below the heat resistance temperature of the transfer robot 180, the transfer throughput can be improved. Moreover, it is desirable that the second temperature be at a level that will not adversely affect the temperature sensor 250 disposed on the rotating shaft 243. In addition, the temperature sensor 250 may also be disposed on the lifting section 241.

[0163] Furthermore, the second temperature is, for example, above room temperature (around 25°C) and below 100°C. By setting it within this range, the O-ring 248 can be easily peeled off from the cover 247. Additionally, since it is below the heat resistance temperature of the transfer robot 180, transfer efficiency can be improved. Furthermore, since it is a temperature that will not adversely affect the temperature sensor 250, malfunctions of the temperature sensor 250 or a decrease in processing throughput can be avoided.

[0164] After a predetermined time has elapsed while the pressure inside the inner reaction tube 222 is higher than the pressure inside the transfer chamber 270, the substrate support lowering process S304 begins. This predetermined time is, for example, the time until the deformed O-ring 248 recovers its shape. Furthermore, the pressures inside the inner reaction tube 222 and the transfer chamber 270 can be measured here; if the measured results are within predetermined values, the substrate support lowering process S304 begins.

[0165] (Substrate support member lowering process S304)

[0166] In the pressure adjustment process S302, the pressure inside the inner reaction tube 222 is set to a state higher than the pressure inside the transfer chamber 270. After a predetermined time, in this process, while maintaining pressure control, the lifting unit 241 lowers the substrate support 240. As described above, the predetermined time is, for example, the time until the deformed O-ring 248 recovers its shape. Therefore, during the stage of lowering the substrate support 240, breakage of the O-ring 248 can be suppressed, and the O-ring 248 can be easily peeled off from the cover 247. Therefore, by lowering the substrate support 240 after a predetermined time, the generation of particles caused by breakage of the O-ring 248 can be suppressed, and the substrate support 240 is lowered.

[0167] Here, the control of the inert gas supply section 226, exhaust section 230, and exhaust section 280 can also be maintained at the pressure relationship described above. While maintaining these controls, the atmosphere in the inner reaction tube 222 and the transfer chamber 270 gradually becomes the same pressure, thus preventing abrupt changes. Therefore, turbulence of the atmosphere caused by abrupt pressure changes can be prevented, thereby suppressing the adhesion of particles swirling up with turbulence to the substrate S of the substrate support 240 and the intrusion of particles into the inner reaction tube 222. Furthermore, by setting this relationship, the air flow in the transfer chamber 270 can be controlled to flow towards the exhaust pipe 281. Therefore, it is possible to suppress the backflow of air in the transfer chamber 270 into the inner reaction tube 222 or into the vacuum transfer chamber 140.

[0168] Alternatively, the pressure inside the transfer chamber 270 can be controlled to decrease. That is, the pressure inside the inner reaction tube 222 can be controlled to be higher than the pressure inside the transfer chamber 270. In this case, for example, by maintaining the control of the inert gas supply unit 226, the inert gas supply unit 271, and the exhaust unit 230, the opening of the control valve 282 is increased, thereby increasing the exhaust volume of the exhaust unit 280. By maintaining the control of the inert gas supply unit 226, the inert gas supply unit 271, and the exhaust unit 230, rapid changes in the atmosphere inside the inner reaction tube 222 can be suppressed.

[0169] Furthermore, by making the pressure inside the inner reaction tube 222 higher than the pressure inside the transfer chamber 270, an airflow can be generated from the inside of the inner reaction tube 222 into the transfer chamber 270, thus suppressing the entry of atmosphere from the transfer chamber 270 into the inner reaction tube 222. This keeps the atmosphere inside the inner reaction tube 222 and the transfer chamber 270 clean. Moreover, by changing the control of the exhaust section 280 while maintaining the control of the exhaust section 230, the atmosphere can be discharged from the inner reaction tube 222 without generating turbulence. Therefore, particle diffusion can be suppressed within the inner reaction tube 222. Additionally, by gradually reducing the opening of the valve 282, the atmosphere can be discharged from the transfer chamber 270 without generating turbulence. Turbulence of the atmosphere accompanied by rapid pressure changes can be prevented, and as a result, the adhesion of particles entangled by turbulence to the substrate S of the substrate support 240 and the intrusion of particles into the inner reaction tube 222 can be suppressed.

[0170] Furthermore, the above description describes that after the pressure inside the inner reaction tube 222 is higher than the pressure inside the transfer chamber 270, the lifting unit 241 lowers the substrate support 240 after a predetermined time, but this is not limited to this. For example, the descent of the rotation shaft 243 can also be started based on the detection results of the pressure detection units 234 and 284. For example, the rotation shaft 243 is lowered after the pressure difference between the pressure detection units 234 and 284 reaches a predetermined pressure difference. This predetermined pressure difference is a pressure that will not damage the O-ring 248, for example, higher than 0 kPa and lower than 3.0 kPa.

[0171] (Other implementation methods)

[0172] Furthermore, the example described for substrate processing apparatus 100 is that a total of four reactors 200 and 300 are used, but it is not limited to this. Substrate processing apparatuses that use five or more reactors 200 and 300, for example, a total of eight or more reactors, may also be used.

[0173] Furthermore, for example, in the embodiments described above, the following cases are listed: in the film formation process performed in the substrate processing apparatus, HCDS gas is used as the gas containing the first element (first gas), and NH3 gas is used as the gas containing the second element (second gas) to form a SiN film on the substrate S, but this solution is not limited to this. That is, the processing gas used in the film formation process is not limited to HCDS gas, NH3 gas, etc., and other types of gases can also be used to form other types of thin films. In addition, it is also possible to use three or more processing gases. Furthermore, the first element may not be Si, but various elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), etc. Furthermore, the second element may not be H, but nitrogen (N), etc.

[0174] In addition, as described in the above embodiments, the modification process is described using a gas containing H (a third gas), but it is not limited to this. For example, any one of oxygen (O), nitrogen (N), carbon (C), hydrogen (H) or a combination thereof may be used.

[0175] Furthermore, in the embodiments described above, examples of modification treatment after film formation treatment have been described, but this is not a limitation; film formation treatment may also be performed after modification treatment.

[0176] Furthermore, for example, in the above embodiments, the processing performed as a substrate processing apparatus includes film formation processing and modification processing, but this solution is not limited to these. That is, in addition to the film formation processing and modification processing exemplified in each embodiment, this solution can also be applied to film formation processing and modification processing other than the thin films exemplified in each embodiment. Furthermore, without specifying the specific content of the substrate processing, it can be applied not only to film formation processing and modification processing, but also to other substrate processing such as annealing, diffusion processing, oxidation processing, nitriding processing, and photolithography. Moreover, this solution can also be applied to other substrate processing apparatuses, such as annealing apparatuses, etching apparatuses, oxidation processing apparatuses, nitriding processing apparatuses, exposure apparatuses, coating apparatuses, drying apparatuses, heating apparatuses, plasma-based processing apparatuses, and other substrate processing apparatuses. Furthermore, a portion of the structure of a certain embodiment can be replaced with the structure of another embodiment, and a structure of another embodiment can be added to the structure of a certain embodiment. Additionally, for a portion of the structure of each embodiment, other structures can be added, deleted, or replaced.

Claims

1. A substrate processing apparatus, characterized in that, have: The first container includes an inlet / outlet section that forms an inlet / outlet for moving substrates in / out and a processing chamber for receiving said substrates. The second container is adjacent to the first container and can communicate with the first container via the inlet / outlet; A cover that can close the loading / unloading outlet; A sealing component, disposed between the loading / unloading section and the cover; and The control unit is capable of controlling the pressure in the first container to be lower than the pressure in the second container while the substrate is being processed in the processing chamber, with the inlet / outlet closed by the cover, and the pressure in the first container to be higher than the pressure in the second container after the substrate has been processed and before the first and second containers are connected.

2. The substrate processing apparatus according to claim 1, characterized in that, have: A third container, capable of performing different processes than the first container; and A vacuum transfer chamber, disposed between the second container and the third container, is capable of transferring the substrate. The second container includes: a substrate support portion for supporting the substrate; a rotation shaft for supporting the substrate support portion; and a lifting portion capable of raising and lowering the substrate support portion. The control unit is capable of opening the gate valve located between the second container and the vacuum transfer chamber after the movement of the rotating shaft has stopped.

3. The substrate processing apparatus according to claim 1, characterized in that, It has a heater capable of heating the processing chamber. During the processing of the substrate in the processing chamber, the heater is controlled to reach a first temperature that causes the sealing member to deform. After the substrate is processed and before the first container and the second container are connected, the heater is controlled to reach a second temperature lower than the first temperature.

4. The substrate processing apparatus according to claim 3, characterized in that, The heater includes a wall-side heater disposed separately from the wall of the processing chamber that extends in the vertical direction. The sealing component is disposed below the wall.

5. The substrate processing apparatus according to claim 3, characterized in that, The heater includes a cover-side heater disposed on the cover body.

6. The substrate processing apparatus according to claim 3, characterized in that, The second container includes: a substrate support portion for supporting the substrate; a rotation shaft for supporting the substrate support portion; and a lifting portion capable of raising and lowering the substrate support portion. A sensor is provided on the rotating shaft or the lifting part, and the second temperature is a temperature that will not adversely affect the sensor.

7. The substrate processing apparatus according to claim 3, characterized in that, The second temperature is above room temperature and below 100°C.

8. The substrate processing apparatus according to claim 1, characterized in that, have: A substrate support portion that supports the substrate; A rotating shaft that supports the substrate support portion; A lifting unit, capable of lifting the base plate support unit; and An exhaust pipe is disposed in the second container. Control is performed in parallel with lowering the rotating shaft to prevent the atmosphere in the second container from flowing into the first container.

9. The substrate processing apparatus according to claim 1, characterized in that, have: A substrate support portion that supports the substrate; A rotating shaft that supports the substrate support portion; A lifting unit, capable of lifting the base plate support unit; and An exhaust pipe is disposed in the second container. Control is performed in parallel with lowering the rotating shaft to direct the atmosphere within the second container toward the exhaust pipe.

10. The substrate processing apparatus according to claim 9, characterized in that, A valve is provided in the exhaust pipe. The control is performed in parallel with lowering the rotating shaft to activate the valve.

11. The substrate processing apparatus according to claim 10, characterized in that, The control is performed in parallel with lowering the rotating shaft to gradually reduce the opening of the valve.

12. The substrate processing apparatus according to claim 1, characterized in that, have: A substrate support portion that supports the substrate; A rotating shaft that supports the substrate support portion; and The lifting unit is capable of raising and lowering the base plate support unit. Control is implemented such that, after the substrate is processed and before the first container and the second container are connected, the pressure inside the first container is higher than the pressure inside the second container, and the descent of the rotating shaft begins after the pressure difference between the first container and the second container reaches a predetermined value.

13. The substrate processing apparatus according to claim 12, characterized in that, The predetermined value is set to a value that will prevent the sealing component from breaking.

14. The substrate processing apparatus according to claim 12, characterized in that, The predetermined value is higher than 0 kPa and lower than 3.0 kPa.

15. The substrate processing apparatus according to claim 1, characterized in that, have: A substrate support portion that supports the substrate; A rotating shaft that supports the substrate support portion; and The lifting unit is capable of raising and lowering the base plate support unit. After the substrate is processed and before the first container and the second container are connected, control is performed to make the pressure in the first container higher than the pressure in the second container, and after a predetermined time, control is performed while maintaining this control to make the rotating shaft descend.

16. The substrate processing apparatus according to claim 1, characterized in that, have: A substrate support portion that supports the substrate; A rotating shaft that supports the substrate support portion; A lifting unit, which is capable of lifting the base plate support unit; A first atmosphere control unit is capable of controlling the atmosphere of the first container; as well as The second atmosphere control unit is capable of controlling the atmosphere of the second container. The first atmosphere control unit and the second atmosphere control unit control the first atmosphere control unit after processing the substrate and before connecting the first container and the second container, so that the pressure in the first container is higher than the pressure in the second container. Then, during the descent of the rotating shaft, the control of the first atmosphere control unit is maintained and the control of the second atmosphere control unit is changed.

17. A method for manufacturing a semiconductor device, using a substrate processing apparatus, the substrate processing apparatus comprising: The first container has an inlet / outlet section that forms an inlet / outlet for loading / unloading substrates and a processing chamber for receiving the substrates. The second container is adjacent to the first container and can communicate with the first container via the inlet / outlet; A cover capable of closing the loading / unloading outlet; and A sealing component is disposed between the inlet / outlet portion and the cover. The method for manufacturing the semiconductor device is characterized in that... During the processing of the substrate in the processing chamber, with the inlet / outlet closed by the cover, the pressure inside the first container is lower than the pressure inside the second container. After the substrate is processed and before the first container and the second container are connected, the pressure inside the first container is made higher than the pressure inside the second container.

18. A storage medium, characterized in that, The program stores a procedure that causes the substrate processing apparatus to perform the following steps via a computer: During the processing of the substrate in the processing chamber, with the inlet / outlet closed by the cover, the pressure inside the first container is lower than the pressure inside the second container. as well as After processing the substrate and before connecting the first container and the second container, the pressure inside the first container is made higher than the pressure inside the second container. The substrate processing apparatus includes: The first container includes an inlet / outlet portion that forms the inlet / outlet for loading / unloading the substrate and a processing chamber for receiving the substrate. The second container is adjacent to the first container and is in communication with the first container via the inlet / outlet; The cover is capable of closing the inlet / outlet; and A sealing component is disposed between the loading / unloading section and the cover.

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