Detection device and driving method of detection device

Abstract

The present disclosure provides a detection device including a pixel circuit and a compensation circuit. The pixel circuit includes a first transistor, a second transistor, a third transistor, and a photodiode. The photodiode is coupled between the first transistor and the second transistor. The compensation circuit includes a first terminal and a second terminal. The first terminal of the compensation circuit is coupled to the third transistor. The second terminal of the compensation circuit is coupled to the first transistor.

Description

Technical Field

[0001] This disclosure relates to a detection device and a driving method for the detection device. Background Technology

[0002] When transistors are used in optical sensors, variations in their component characteristics can amplify the error in the output readout signal, easily causing the signal range to exceed the input range of the readout circuit. Therefore, there is a need for electronic devices and driving methods that can reduce the error in the sensing current caused by variations in transistor characteristics. Summary of the Invention

[0003] The detection device disclosed herein includes a pixel circuit and a compensation circuit. The pixel circuit includes a first transistor, a second transistor, a third transistor, and a photodiode. The photodiode is coupled between the first transistor and the second transistor. The compensation circuit includes a first terminal and a second terminal. The first terminal of the compensation circuit is coupled to the third transistor. The second terminal of the compensation circuit is coupled to the first transistor.

[0004] The driving method of the detection device disclosed herein is suitable for driving a detection device. The detection device includes a pixel circuit and a compensation circuit. The pixel circuit includes a first transistor, a second transistor, a third transistor, and a photodiode, wherein the photodiode is coupled between the first transistor and the second transistor, and the compensation circuit is coupled between the third transistor and the first transistor. The driving method of the detection device includes: performing a reset step, wherein during the reset step, the first transistor and the third transistor are turned on, and the voltage at the control terminal of the second transistor is adjusted by the compensation circuit; performing an illumination integration step, wherein during the illumination integration step, the first transistor and the third transistor are not turned on; and performing a readout step, wherein during the readout step, the first transistor is not turned on, and the third transistor is turned on.

[0005] To make the foregoing more understandable, several embodiments, accompanied by accompanying drawings, are described in detail below. Attached Figure Description

[0006] Figure 1 A schematic diagram of a detection device according to an embodiment of the present invention is shown;

[0007] Figure 2 Show Figure 1 A schematic diagram of the voltage signal at each step in the embodiment;

[0008] Figure 3 A schematic diagram of a detection device according to another embodiment of the present invention is shown;

[0009] Figure 4 A schematic diagram of a detection device according to another embodiment of the present invention is shown;

[0010] Figure 5 Show Figure 4 A schematic diagram of the voltage signal at each step in the embodiment;

[0011] Figure 6 A flowchart illustrating the steps of a driving method for a detection device according to an embodiment of the present invention is shown. Detailed Implementation

[0012] This disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of brevity, many of the drawings in this disclosure depict only a portion of the electronic device, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of the components in the drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0013] In the following description and claims, the words “containing” and “including” are open-ended terms and should therefore be interpreted as “containing but not limited to…”.

[0014] It should be understood that although the terms first, second, third… can be used to describe multiple components, the components are not limited to these terms. These terms are used only to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but rather replaced by first, second, third… in the order of the elements declared in the claims. Therefore, in the following description, a first component may be a second component in the claims.

[0015] In some embodiments of this disclosure, terms such as "connection" and "interconnection," unless specifically defined, may refer to two structures being in direct contact, or to two structures not being in direct contact, with other structures disposed between them. Furthermore, these terms regarding engagement and connection may also include situations where both structures are movable or both structures are fixed. In addition, the term "coupled" includes any direct and indirect electrical connection means.

[0016] The electronic devices disclosed herein may include, but are not limited to, display devices, antenna devices, sensing devices, light-emitting devices, or splicing devices. Electronic devices may include bendable or flexible electronic devices. Electronic devices may include electronic components. Electronic devices may include, for example, liquid crystal layers or light-emitting diodes (LEDs). Electronic components may include passive and active components, such as capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, sensors, microelectromechanical systems (MEMS) components, liquid crystal chips, controllers, etc., but are not limited to these. Diodes may include light-emitting diodes or photodiodes. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), sub-millimeter light-emitting diodes (miniLEDs), micro LEDs, quantum dot LEDs, fluorescent, phosphorescent, or other suitable materials, or combinations thereof, but are not limited to these. Sensors may include, for example, capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (FPS), touch sensors, antennas, or pen sensors, but are not limited to these. Controllers may include, for example, timing controllers, voltage converter controllers, etc., where the voltage converter controller includes voltage converter circuitry, but are not limited to these. The following description uses a display device as an example of an electronic device, but this disclosure is not limited thereto.

[0017] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element references are used in the drawings and description to denote the same or similar parts.

[0018] Figure 1 A schematic diagram of a detection device according to an embodiment of the present invention is shown. Figure 2 Show Figure 1 The waveform diagram of the voltage signal at each step in the embodiment is shown below. Please refer to... Figure 1 and Figure 2The detection device 100 includes a pixel circuit 110, a compensation circuit 120, and an output circuit 130. The pixel circuit 110 includes a first transistor T1, a second transistor T2, a third transistor T3, and a photodiode PD. The photodiode PD is coupled between the first transistor T1 and the second transistor T2, and the compensation circuit 120 is coupled between the third transistor T3 and the first transistor T1. The third transistor T3 outputs a sensing current Isen. The compensation circuit 120 includes a first terminal N1 and a second terminal N2. The first terminal N1 of the compensation circuit 120 is coupled to the third transistor T3 and receives the sensing current Isen. The second terminal N2 of the compensation circuit 120 is coupled to the first transistor T1. In the reset step P1, the compensation circuit 120 adjusts the voltage Vg of the control terminal of the second transistor T2 according to the sensing voltage Vsen corresponding to the sensing current Isen.

[0019] Specifically, the first transistor T1 can serve as a reset transistor, including a first terminal, a second terminal, and a control terminal. The first terminal of the first transistor T1 can be coupled to the second terminal N2 of the compensation circuit 120 via signal line 210. The second terminal of the first transistor T1 can, for example, be coupled to the cathode of the photodiode PD and the control terminal of the second transistor T2, but is not limited thereto. In other embodiments (not shown), the second terminal of the first transistor T1 can, for example, be coupled to the anode of the photodiode PD and the control terminal of the second transistor T2, but is not limited thereto. The control terminal of the first transistor T1 can be coupled to a reset signal Vrst. The photodiode PD (e.g., its cathode) can be coupled to the second terminal of the first transistor T1 and the control terminal of the second transistor T2, and the photodiode PD (e.g., its anode) can be coupled to ground voltage or voltage source C2 (e.g., a low voltage, for example, VSS).

[0020] Specifically, the second transistor T2, acting as a driving transistor, includes a first terminal, a second terminal, and a control terminal. The first terminal of the second transistor T2 is coupled to a voltage source C1 (e.g., a high voltage, such as VDD). The second terminal of the second transistor T2 is coupled to the first terminal of the third transistor. The control terminal of the second transistor T2 is coupled to a photodiode (e.g., the cathode) and the second terminal of the first transistor T1. The third transistor T3, acting as a first selection transistor, includes a first terminal, a second terminal, and a control terminal. The first terminal of the third transistor T3 is coupled to the second terminal of the second transistor T2. The second terminal of the third transistor T3 is coupled to the first terminal N1 of the compensation circuit 120 via signal line 220. The control terminal of the third transistor T3 is coupled to a first control signal V1.

[0021] In some embodiments, the compensation circuit 120 may include a current-to-voltage converter 202, a comparator 204, and / or a fifth transistor M1. The current-to-voltage converter 202 may include a first terminal and a second terminal. The first terminal of the current-to-voltage converter 202 may be coupled to a third transistor T3 and receive a sensed current Isen. The current-to-voltage converter 202 may convert the sensed current Isen into a sensed voltage Vsen, which is generated, for example, at the second terminal of the current-to-voltage converter 202.

[0022] In some embodiments, the current-to-voltage converter 202 may include, but is not limited to, an amplifier AMP and / or a resistor R. The amplifier AMP may, for example, have a non-inverting input, an inverting input, and an output. The non-inverting input of the amplifier AMP may be grounded, and the inverting input of the amplifier AMP may serve as the first terminal of the current-to-voltage converter 202. The output of the amplifier AMP may serve as the second terminal of the current-to-voltage converter 202. The resistor R may, for example, be coupled between the inverting input and the output of the amplifier AMP.

[0023] In some embodiments, comparator 204 may include a first input (e.g., an inverting input), a second input (e.g., a non-inverting input), and an output. The first input of comparator 204 may be coupled to the second terminal of current-to-voltage converter 202 to receive a sensed voltage Vsen. The second terminal of comparator 204 may be coupled to a data voltage Vd. Comparator 204 may generate a control signal Vsw at its output based on the sensed voltage Vsen and the data voltage Vd. The control signal Vsw may be used to control the conduction state of the fifth transistor M1.

[0024] In some embodiments, the fifth transistor M1 includes a first terminal, a second terminal, and a control terminal. The first terminal of the fifth transistor M1 can be coupled to the first terminal of the first transistor T1 via signal line 210. The second terminal of the fifth transistor M1 can be coupled to an external voltage source Vramp. The control terminal of the fifth transistor M1 can be coupled to the output terminal of comparator 204. In some embodiments, comparator 204 can output a control signal Vsw based on the sensed voltage Vsen and the data voltage Vd to control the conduction state of the fifth transistor M1. When the fifth transistor M1 is turned on, the voltage Vg of the control terminal of the second transistor can be adjusted by outputting the external voltage source Vramp to the pixel circuit 110, but this is not limited to this.

[0025] Furthermore, the output circuit 130 may include a fourth transistor T4. The fourth transistor T4, serving as a second selection transistor, includes a first terminal, a second terminal, and a control terminal. The first terminal of the fourth transistor T4 may be coupled to the first terminal N1 of the compensation circuit 120. The second terminal of the fourth transistor T4 may serve as an output terminal to output a sensed voltage Vsen corresponding to the sensed current Isen, as the output voltage Vout. In some embodiments, the control terminal of the fourth transistor T4 may be coupled to a second control signal V2.

[0026] In some embodiments, the first transistor T1, the second transistor T2, the third transistor T3, and / or the fourth transistor T4 are, for example, NMOS transistors, and the fifth transistor M1 is, for example, a PMOS transistor, but are not limited thereto. The present invention does not limit the form of the transistors.

[0027] Please refer to this again. Figure 1 and Figure 2 The operation steps of the detection device 100 may include performing a reset step P1, performing an illumination integration step P2, and / or performing a readout step P3. During the reset step P1, the voltage at the control terminal of the second transistor T2 can be adjusted via the compensation circuit 120. Figure 2 The diagram shows the voltage waveforms of the reset signal Vrest, the signal from the external voltage source Vramp, the first control signal V1 (the control signal provided to the third transistor T4), and the second control signal V2 (the control signal provided to the fourth transistor T4) at the different steps described above.

[0028] In some embodiments, during reset step P1, the first transistor T1, the third transistor T3, and the fifth transistor M1 may, for example, be turned on (and enabled), while the fourth transistor T4 is not turned on (and disabled). During reset step P1, the voltage at the control terminal of the second transistor T2 can be adjusted by the compensation circuit 120. During reset step P1, the fifth transistor M1 may, for example, be selectively turned on by outputting a control signal Vsw based on the aforementioned sensed voltage Vsen and data voltage Vd. When the fifth transistor M1 is turned on, the voltage at the control terminal of the second transistor T2 can be adjusted by an external voltage source Vramp. For example, during reset step P1, the voltage Vg at the control terminal of the second transistor T2 may, for example, be modulated by the provided external voltage source Vramp. In detail, the external voltage source Vramp can be, for example, a voltage source with adjustable voltage, which can be gradually modulated from a negative voltage to a high voltage. Therefore, during the reset step P1, and when the fifth transistor M1 is turned on, the voltage Vg at the control terminal of the second transistor T2 can be synchronously modulated according to the received voltage of the external voltage source Vramp, until the sensed voltage Vsen is the same as the given data voltage Vd. At this point, the comparator 204 will output a high-voltage control signal Vsw to de-turn on the fifth transistor M1. When the fifth transistor M1 is not turned on, the external voltage source Vramp will no longer output to the pixel circuit 110 to regulate the voltage Vg at the control terminal of the second transistor. Therefore, at this time, the voltage Vg at the control terminal of the second transistor T2 can correspond to the voltage value of the sensed voltage Vsen, thereby achieving current initialization and completing the reset compensation operation.

[0029] Next, in the illumination integration step P2, the first transistor T1, the third transistor T3, and / or the fourth transistor T4 are, for example, de-conducted. During the illumination integration step P2, when the third transistor T3 is, for example, de-conducted, initialization current is prevented from flowing from the pixel circuit 110 to the compensation circuit 120. Then, in the readout step P3, the first transistor T1 is, for example, de-conducted, while the third transistor T3 and the fourth transistor T4 are, for example, turned on, so that the sensed voltage Vsen can be read from the pixel circuit 110 and output as the output voltage Vout to the next stage circuit.

[0030] In some embodiments, when the fifth transistor M1 is turned on, an external voltage source Vramp can be input to the pixel circuit 110 through the compensation circuit 120. The external voltage source Vramp can be, for example, a triangular wave or other shaped signal waveform, and the present invention is not limited thereto. Therefore, when the second transistor T2 undergoes characteristic variation (e.g., a change in the threshold voltage Vth), the voltage Vg at the control terminal of the second transistor T2 can be adjusted by the external voltage source Vramp to initialize the output current Id of the second transistor T2. Current initialization, for example, refers to adjusting the voltage Vg at the control terminal of the second transistor T2 so that the difference between the voltage Vg and the threshold voltage (Vth) does not change due to the characteristic variation of the second transistor T2. This can reduce the output current Id of the second transistor T2 from being too different due to characteristic variation, thereby reducing the error in the sensing current caused by the characteristic variation of the transistor.

[0031] exist Figure 1 In some embodiments, the detection device 100 may include a pixel circuit 110, a compensation circuit 120, and / or an output circuit 130, but is not limited thereto. In one embodiment, the detection device may include multiple pixel circuits, at least one compensation circuit, and multiple output circuits. That is, multiple pixel circuits may share a single compensation circuit, but is not limited thereto.

[0032] Figure 3 A schematic diagram of a detection device according to another embodiment of the present invention is shown. Please refer to... Figure 1 and Figure 3 The detection device 300 in this embodiment is similar to Figure 1 The main difference between the detection device 100 and the other two is that the detection device 300 includes pixel circuits 110_1 and 110_2, a compensation circuit 120, and / or output circuits 130_1 and 130_2. Pixel circuits 110_1 and 110_2 are, for example, pixel circuits located in the same pixel column. That is, pixel circuits 110_1 and 110_2 can share a compensation circuit 120. In some implementations, the compensation circuit 120 can time-divisionally control the voltage Vg at the control terminal of the second transistor T2 in each pixel circuit to initialize the output current Id of each second transistor T2, reducing the large differences in output current Id caused by characteristic variations of the second transistors T2 in different pixel circuits. Therefore, the detection device 300 can reduce the error in the sensed current caused by characteristic variations of transistors.

[0033] Figure 4 A schematic diagram of a detection device according to another embodiment of the present invention is shown. Figure 5 Show Figure 4 A schematic diagram of the voltage signal waveform in the embodiment. Please refer to... Figure 1 , Figure 4 and Figure 5 The detection device 400 in this embodiment is similar to Figure 1 The main difference between the detection device 100 in the embodiment and the other is, for example, the structure and operation of the compensation circuit.

[0034] Specifically, the detection device 400 includes a pixel circuit 110, a compensation circuit 420, and an output circuit 130. For details on the pixel circuit 110 and the output circuit 130, please refer to... Figure 1 The following describes the compensation circuit 420 in the embodiment. The compensation circuit 420 may include a current mirror circuit 422 and / or at least one amplifier circuit (e.g., amplifier circuit 424, amplifier circuit 426). Amplifier circuit 424 and amplifier circuit 426 may be, for example, common-source amplifiers, but are not limited thereto. Two amplifier circuits (i.e., amplifier circuit 424, amplifier circuit 426) are used as an example here, but the number of amplifier circuits is not intended to limit the invention, and an odd or even number of amplifier circuits may be used as needed.

[0035] The current mirror circuit 422 may include a first terminal and a second terminal. The first terminal of the current mirror circuit 422 may be coupled to a third transistor T3 via a signal line 220 and receive a sensed current Isen. The current mirror circuit 422 generates a mirrored current Im based on the sensed current Isen. Based on the mirrored current Im, a sensed voltage Vsen can be generated at the second terminal of the current mirror circuit 422.

[0036] Amplifier circuit 424 may include a first terminal and a second terminal. Amplifier circuit 426 includes a first terminal and a second terminal. The first terminal of amplifier circuit 424 may be coupled to the second terminal of current mirror circuit 422. The second terminal of amplifier circuit 424 may be coupled to the first terminal of amplifier circuit 426. The second terminal of amplifier circuit 426 may, for example, be coupled to the first transistor T1 via signal line 210. In some embodiments, the sensed voltage Vsen may be generated by amplifier circuits 424 and 426 to produce a control voltage Vo, which is output, for example, from the second terminal N3 of amplifier circuit 426. Therefore, in reset step P1, the voltage Vg of the control terminal of the second transistor T2 in pixel circuit 110 may be controlled by transmitting this control voltage Vo to pixel circuit 110.

[0037] Please refer to this again. Figure 4 and Figure 5 The operation steps of the detection device 400 include a reset step P1, an illumination integration step P2, and / or a readout step P3. Figure 5The diagram shows the voltage waveforms of the reset signal Vrest, the first control signal V1 (provided to the third transistor T4), and the second control signal V2 (provided to the fourth transistor T4) at the different steps described above. In reset step P1, the first transistor T1 and the third transistor T3 are, for example, turned on. When the characteristics of the second transistor T2 change, the output current Id of the second transistor T2 will change. For example, if the threshold voltage drifts positively, the output current Id will decrease. The output current Id can be used as a sensing current Isen and output from the pixel circuit 110 to the compensation circuit 420. In reset step P1, the current mirror circuit 422 can replicate this sensing current Isen and pass it through amplifier circuits 424 and / or 426. After this sensing current Isen passes through an even number of amplifier circuits, for example, the sensing voltage Vsen can be amplified into a control voltage Vo. The control voltage Vo can, for example, increase the voltage Vg at the control terminal of the second transistor T2 to counteract the effect of the threshold voltage drift, but is not limited to this. Therefore, when the characteristics of the second transistor T2 change, the voltage Vg at the control terminal of the second transistor T2 can be adjusted by regulating the voltage Vo, thereby initializing the output current Id of the second transistor T2 and reducing the large difference in the output current Id caused by the characteristic change. Thus, the detection device 400 can reduce the error in the sensed current caused by the characteristic change of the transistor.

[0038] In other embodiments (not shown), the compensation circuit 420 may include a current mirror circuit 422 and a single amplifier circuit. When the characteristics of the second transistor T2 change, during the reset step P1, for example, if the threshold voltage drifts negatively, the output current Id will increase. The output current Id can be used as the sensing current Isen and output from the pixel circuit 110 to the compensation circuit 420. During the reset step P1, the current mirror circuit 422 can replicate the sensing current Isen, and after passing through the single amplifier circuit, it can, for example, reduce the sensing voltage Vsen to the control voltage Vo. The control voltage Vo can, for example, reduce the voltage Vg at the control terminal of the second transistor T2 to counteract the effect of the negative threshold voltage drift, but is not limited thereto. Therefore, when the characteristics of the second transistor T2 change, the voltage Vg at the control terminal of the second transistor T2 can be controlled by the control voltage Vo to initialize the output current Id of the second transistor T2 and reduce the output current Id of the second transistor T2 that is too different due to the characteristic change. In addition, the operation of the detection device 400 in the illumination integration step P2 and the readout step P3 of this embodiment is similar to that of the second transistor T2. Figure 1 The detection device 100 of the embodiment will not be described again here.

[0039] Figure 6 A flowchart illustrating the steps of a driving method for a detection device according to an embodiment of the present invention is provided. Please refer to... Figure 1 , Figure 4 and Figure 6 The driving method of the detection device in this embodiment is at least suitable for Figure 1 , Figure 4 The present invention includes display devices 100 and 400, but is not limited thereto. Figure 1 Taking the detection device 100 as an example, in the reset step P1, the compensation circuit 120 can adjust the voltage Vg at the control terminal of the second transistor T2 according to the sensing voltage Vsen corresponding to the sensing current Isen. In the illumination integration step P2, the pixel circuit 110 can generate the sensing current Isen through the photodiode PD. In the readout step P3, the sensing voltage Vsen corresponding to the sensing current Isen is read from the output circuit 130.

[0040] Furthermore, the driving method of the detection device in this embodiment can be... Figures 1 to 5 Sufficient teachings, suggestions and implementation instructions have been obtained from the embodiments, so they will not be repeated here.

[0041] In summary, in the embodiments of the present invention, when the second transistor experiences characteristic variations, the voltage at the control terminal of the second transistor can be adjusted to initialize the output current of the second transistor, preventing the second transistor from outputting a significantly different output current due to characteristic variations. Current initialization can, for example, be set to a current corresponding to the transistor's sub-threshold region or on-region, but is not limited to these. Therefore, by adjusting the voltage at the control terminal of the second transistor according to the sensing voltage corresponding to the sensing current during the reset step, the compensation circuit can reduce the error in the sensing current caused by transistor characteristic variations in the detection device.

[0042] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them. Although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A detection device, comprising: A pixel circuit includes a first transistor, a second transistor, a third transistor, and a photodiode, wherein the photodiode is coupled between the first transistor and the second transistor; as well as A compensation circuit includes a first terminal and a second terminal, wherein the first terminal of the compensation circuit is coupled to the third transistor, and the second terminal of the compensation circuit is coupled to the first transistor. The compensation circuit includes: A current mirror circuit includes a first terminal and a second terminal, wherein the first terminal of the current mirror circuit is coupled to the third transistor; as well as At least one amplifier circuit includes a first terminal and a second terminal, wherein the first terminal of the at least one amplifier circuit is coupled to the second terminal of the current mirror circuit, and the second terminal of the at least one amplifier circuit is coupled to the first transistor. The first transistor serves as a reset transistor, the second transistor serves as a drive transistor, and the third transistor serves as a select transistor.

2. The detection device according to claim 1, further comprising: The output circuit includes a fourth transistor, wherein the fourth transistor is coupled to the first terminal of the compensation circuit.

3. A driving method for a detection device, adapted to drive the detection device, wherein the detection device includes a pixel circuit and a compensation circuit, and the pixel circuit includes a first transistor, a second transistor, a third transistor, and a photodiode, the photodiode being coupled between the first transistor and the second transistor, and the compensation circuit being coupled between the third transistor and the first transistor, and the driving method for the detection device includes: A reset step is performed, wherein during the reset step, the first transistor and the third transistor are turned on, and the voltage at the control terminal of the second transistor is regulated by the compensation circuit; A light integration step is performed, wherein during the light integration step, the first transistor and the third transistor are not turned on. as well as A readout step is performed, wherein during the readout step, the first transistor is not turned on, and the third transistor is turned on. The compensation circuit includes: A current mirror circuit includes a first terminal and a second terminal, wherein the first terminal of the current mirror circuit is coupled to the third transistor; as well as At least one amplifier circuit includes a first terminal and a second terminal, wherein the first terminal of the at least one amplifier circuit is coupled to the second terminal of the current mirror circuit, and the second terminal of the at least one amplifier circuit is coupled to the first transistor. The first transistor serves as a reset transistor, the second transistor serves as a drive transistor, and the third transistor serves as a select transistor.

4. The driving method of the detection device according to claim 3, wherein the detection device includes an output circuit, the output circuit includes a fourth transistor, the fourth transistor being coupled to the compensation circuit and the third transistor, wherein the fourth transistor is not turned on during the reset step.

5. The driving method of the detection device according to claim 3, wherein the detection device includes an output circuit, the output circuit includes a fourth transistor, the fourth transistor being coupled to the compensation circuit and the third transistor, wherein the fourth transistor is not turned on during the illumination integration step.

6. The driving method of the detection device according to claim 3, wherein the detection device includes an output circuit, the output circuit includes a fourth transistor, the fourth transistor being coupled to the compensation circuit and the third transistor, wherein the fourth transistor is turned on during the readout step.

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