Physical vapor deposition apparatus and method

Abstract

The present disclosure relates to a physical vapor deposition device and method, which comprises a reaction chamber, a first magnetron assembly, a support part and a second magnetron assembly. The top of the reaction chamber is provided with a target material. The first magnetron assembly is arranged on the back of the target material. The second magnetron assembly is arranged on the back of the support part. When the first magnetron assembly works, a magnetic field is generated at the target material, so that the positive ions of the plasma are attracted by the cathode negative electricity, hit the target material, knock out the atoms of the target material, and deposit on the substrate to obtain a film layer. In addition, the magnetic field lines generated by the second magnetron assembly when working are complementary to the magnetic field lines generated by the first magnetron assembly. Not only can the electron collision probability be further increased and the deposition rate be improved, but also the electron distribution trajectory can be changed, so that the magnetic field intensity of each part of the target material is relatively uniform. In this way, the thickness uniformity of each position of the target material is good, thereby the utilization rate of the target material can be improved, the service life of the target material can be prolonged, and the cost can be reduced.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor equipment, and in particular, to a physical vapor deposition device and method. BACKGROUND

[0002] Magnetron sputtering is one of the physical vapor deposition (PVD) and one of the most widely used thin film deposition methods in the field of semiconductor chip manufacturing. Its basic principle is that in a high vacuum, Ar, Kr, Xe and other heavy gas molecules are ionized by an electric field, and the cations are accelerated by the electric field to bombard the target atoms onto the substrate (for example, a wafer) to form a thin film. Magnetron sputtering introduces a magnetic field on the surface of the cathode target, uses the magnetic field to confine charged particles to improve ionization rate (i.e., the density of the plasma) to increase the deposition rate. The target material will be gradually consumed and thinned after being used for a period of time. However, during the gradual consumption and thinning of the target material, uneven thickness defects are prone to occur, and once the thickness of a certain part of the target material decreases to a safety value, it will be scrapped, so that the target material is not fully utilized, the service life is short, and the material cost is high. SUMMARY

[0003] Therefore, it is necessary to overcome the defects of the prior art and provide a physical vapor deposition device and method which can improve the utilization rate of the target material, prolong the service life of the target material, and reduce the cost.

[0004] A physical vapor deposition device, comprising:

[0005] a reaction chamber, a top of the reaction chamber being provided with a target material;

[0006] a first magnetron assembly, the first magnetron assembly being arranged on a back surface of the target material;

[0007] a support portion, the support portion being arranged inside the reaction chamber and being used for supporting a substrate, the support portion being arranged opposite to the target material; and

[0008] a second magnetron assembly, the second magnetron assembly being arranged on a back surface of the support portion.

[0009] In one of the embodiments, the second magnetron assembly comprises a second mounting frame, a plurality of second permanent magnets connected to the second mounting frame, and a second driving mechanism connected to the second mounting frame.

[0010] In one of the embodiments, the second magnetic control assembly comprises a second electric control device and a plurality of second electromagnets; all the second electromagnets are electrically connected with the second electric control device and are arranged at intervals on the back of the support part; the second electric control device is used for controlling the power-on and power-off of each second electromagnet and adjusting the current size of each second electromagnet.

[0011] In one of the embodiments, the second electromagnet comprises a second iron core and a second coil wound outside the second iron core; two ends of the second coil are connected with the second electric control device respectively; the extension direction of the second iron core is perpendicular to the support surface of the support part; the second electric control device comprises a second electric control board, and each second electromagnet is arranged on the second electric control board in an array.

[0012] In one of the embodiments, the number of the second electromagnets is 10-300.

[0013] In one of the embodiments, the physical vapor deposition device further comprises a thickness measurer; the thickness measurer is used for measuring the thickness of the target material, the thickness measurer is signal connected with the second electric control device, and the second electric control device is used for controlling the work of each second electromagnet according to the thickness size sensed by the thickness measurer.

[0014] In one of the embodiments, the physical vapor deposition device further comprises at least one third magnetic control assembly arranged at the side part of the reaction chamber.

[0015] In one of the embodiments, the physical vapor deposition device further comprises a vacuum pump, a direct current power supply and an alternating current power supply; the vacuum pump is connected with the reaction chamber for pumping out the gas inside the reaction chamber; the direct current power supply is electrically connected with the target material, and the alternating current power supply is electrically connected with the second magnetic control assembly.

[0016] A physical vapor deposition method using the physical vapor deposition device, the physical vapor deposition method comprising:

[0017] The magnetic field lines generated when the first magnetic control assembly works are complementary to the magnetic field lines generated when the second magnetic control assembly works.

[0018] In one of the embodiments, the second magnetic control assembly comprises a plurality of second electromagnets, and each second electromagnet is arranged at intervals on the back of the support part; the physical vapor deposition method comprises:

[0019] Obtaining the thickness size of each part of the target material;

[0020] The first part with thickness greater than the preset range on the target material is determined, and the second electromagnet corresponding to the position of the first part is controlled to be powered on, the current size is increased, or the power-on time is increased; and / or, the second part with thickness less than the preset range on the target material is determined, and the second electromagnet corresponding to the position of the second part is controlled to be powered off, the current size is reduced, or the power-on time is reduced.

[0021] The physical vapor deposition device and method described above, when the first magnetron assembly works, a magnetic field is generated at the target material, so that positive ions of the plasma are attracted by the negative cathode, hit the target material, knock out atoms of the target material, and deposit on the substrate to obtain a film layer; in addition, when the second magnetron assembly works, the magnetic field lines generated by the second magnetron assembly are complementary to the magnetic field lines generated by the first magnetron assembly, which not only further increases the collision probability of electrons and improves the deposition rate, but also changes the electron distribution trajectory, so that the magnetic field intensity of each part of the target material is relatively uniform and consistent, so that the thickness uniformity of each position of the target material is good, thereby improving the utilization rate of the target material, prolonging the service life of the target material, and reducing the cost. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 The structure schematic diagram of the physical vapor deposition device of an embodiment of the present application.

[0023] Figure 2 The structure schematic diagram of the first magnetron assembly of an embodiment of the present application.

[0024] Figure 3 The structure schematic diagram of the first magnetron assembly of another embodiment of the present application.

[0025] Figure 4 The structure schematic diagram of the second magnetron assembly of an embodiment of the present application.

[0026] Figure 5 The distribution schematic diagram of each second electromagnet of the second magnetron assembly of an embodiment of the present application.

[0027] Figure 6 The structure schematic diagram of the second electromagnet in the second magnetron assembly of an embodiment of the present application.

[0028] 10, reaction chamber; 20, first magnetron assembly; 21, first mounting bracket; 22, first permanent magnet; 23, first driving mechanism; 24, first electromagnet; 30, support part; 40, second magnetron assembly; 41, second electric control device; 42, second electromagnet; 421, second iron core; 422, second coil; 43, second bracket; 431, second jack; 50, target material; 60, back plate; 70, substrate; 81, vacuum pump; 82, direct current power supply; 83, alternating current power supply; 84, radio frequency power supply matcher. DETAILED DESCRIPTION

[0029] In order to make the above objectives, features and advantages of the present application more clear and comprehensible, specific embodiments of the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a variety of ways beyond the specific embodiments described herein without departing from the scope of the present application, and it is understood that similar improvements can be made by those skilled in the art in light of the foregoing description. Therefore, the present application is not limited to the following disclosed specific embodiments.

[0030] It is noted that the substrate in the present embodiments can be a semiconductor wafer at any stage in the process of forming semiconductor elements, such as integrated circuits or discrete devices, on a substrate. In one embodiment, the substrate includes a very low dielectric constant dielectric layer and a metal layer on a semiconductor substrate. The substrate can be a mask, a semiconductor wafer, or other workpiece known to those skilled in the art of electronic device manufacturing. In at least some embodiments, the substrate includes any material used to manufacture any integrated circuit, passive (e.g., capacitors, inductors) and active (e.g., transistors, photodetectors, lasers, diodes) microelectronic elements. The substrate can include insulating material (e.g., dielectric material) separating such active and passive microelectronic elements from one or more conductive layers formed on top of them. In one embodiment, the substrate is a semiconductor substrate including one or more dielectric layers, such as silicon, gallium nitride, gallium arsenide, silicon dioxide, silicon nitride, sapphire, and other dielectric materials. In one embodiment, the substrate is a wafer stack including one or more layers. The one or more layers can include conductive layers, semiconductor layers, insulating layers, or any combination of the foregoing.

[0031] As described in the background, in the related art, during the gradual thinning process of the target material, the problem of uneven thickness easily occurs. The inventors have found that the cause of this problem is that, in the related art, when the physical vapor deposition device is working, the magnetron assembly on the back side of the target material (i.e., the side of the target material facing away from the substrate) is correspondingly powered on. When the magnetron assembly is working, a magnetic field is generated on the target material, and under the action of the magnetic field force, the positive ions of the plasma are attracted by the negative electrode of the cathode, and bombard the target material in the reaction chamber, knock out atoms from the target material, and deposit on the substrate to obtain a film layer.

[0032] Based on the above reasons, the present application provides a physical vapor deposition device and method, which can improve the utilization rate of the target material, prolong the service life of the target material, and reduce the cost solution.

[0033] Reference is made to Figure 1 , Figure 1A structural schematic diagram of a physical vapor deposition device according to an embodiment of the present application is shown. The physical vapor deposition device according to an embodiment of the present application comprises a reaction chamber 10, a first magnetron assembly 20, a support portion 30, and a second magnetron assembly 40. The reaction chamber 10 is provided with a target material 50 at the top thereof. The first magnetron assembly 20 is arranged at the back of the target material 50. The support portion 30 is arranged inside the reaction chamber 10 and is used for supporting a substrate 70. The support portion 30 is arranged opposite to the target material 50. The second magnetron assembly 40 is arranged at the back of the support portion 30.

[0034] The physical vapor deposition device described above, when the first magnetron assembly 20 is in operation, generates a magnetic field at the target material 50, so that positive ions of plasma are attracted by the cathode negative electricity, and hit the target material 50, and atoms of the target material 50 are ejected and deposited on the substrate 70 to obtain a film layer. In addition, when the second magnetron assembly 40 is in operation, the magnetic field lines generated thereby are complementary to the magnetic field lines generated by the first magnetron assembly 20. Not only can the electron collision probability be further increased and the deposition rate be improved, but also the electron distribution trajectory can be changed, so that the magnetic field intensity of each part of the target material 50 is relatively uniform and consistent. In this way, the thickness uniformity of each position of the target material 50 is good, and thus the utilization rate of the target material 50 can be improved, the service life of the target material 50 can be prolonged, and the cost can be reduced.

[0035] It should be noted that the back of the target material 50 refers to the side of the target material 50 that faces away from the substrate 70. Similarly, the back of the support portion 30 refers to the side of the support portion 30 that faces away from the substrate 70.

[0036] Please refer to Figure 1 and Figure 2 , Figure 2 A structural schematic diagram of the first magnetron assembly 20 according to an embodiment of the present application is shown. In an embodiment, the first magnetron assembly 20 comprises a first mounting frame 21, a plurality of first permanent magnets 22 connected to the first mounting frame 21, and a first driving mechanism 23 connected to the first mounting frame 21. The first driving mechanism 23 is connected to the first mounting frame 21. Optionally, the first driving mechanism 23 comprises but is not limited to a motor, which is used to drive the first mounting frame 21 to rotate. In this way, the plurality of first permanent magnets 22 rotates under the driving force of the first driving mechanism 23, which can improve the distribution of the magnetic field of the plurality of first permanent magnets 22 in the reaction chamber 10, thereby improving the step coverage and making the film deposition on the substrate 70 more uniform.

[0037] Of course, as some optional solutions, the first driving mechanism 23 can also be omitted, and the first mounting frame 21 is fixedly connected to the back of the target material 50. The plurality of first permanent magnets 22 are correspondingly arranged on the back of the target material 50 in a non-rotatable manner.

[0038] Please refer to Figure 1 and Figure 3 ,Figure 3 A structural diagram of a first magnetron assembly 20 of another embodiment of the present application is shown. Figure 3 The form of the magnets shown is different from Figure 2 The first magnetron assembly 20 shown, in one embodiment, comprises a first electric control device (not shown in the figure) and a plurality of first electromagnets 24. All the first electromagnets 24 are electrically connected with the first electric control device and are arranged at intervals on the back of the target material 50.

[0039] In addition, the first electric control device is used to control the power-on and power-off of each first electromagnet 24 and to adjust the current size of each first electromagnet 24. In this way, when performing sputtering deposition work, under the control of the first electric control device, the power-on of the first electromagnets 24 of the first specific array is achieved with time as the horizontal coordinate to achieve the effect of magnetic field movement, so as to achieve the required magnetic field shape of the reaction chamber 10; in addition, the first electric control device can also flexibly adjust the current size of each first electromagnet 24 according to actual needs, so as to meet the requirements of the reaction chamber 10 on the magnetic field strength, so as to realize the deposition of a thin film with good profile on the substrate 70. In addition, the mechanical mechanism of the first magnetron assembly 20 is reduced, greatly reducing the risk of transmission failure and prolonging the service life; in addition, since each first electromagnet 24 works under the control of the first electric control device, the first specific array can be flexibly selected according to actual needs, and the current size of each first electromagnet 24 of the first specific array can be flexibly controlled according to actual needs, so that the magnetic field size of the reaction chamber 10 is controllable and the shape is adjustable, so as to adapt to reaction chambers 10 of various models, have good adaptability, improve the interchangeability between different reaction chambers 10, do not need to be designed separately shape and transmission structure, and at the same time, better profile can be realized through continuous adjustment of the magnetic field shape and size.

[0040] It should be noted that the first specific array refers to a plurality of the first electromagnets 24 in the first magnetron assembly 20. For example, the number of the first electromagnets 24 of the first magnetron assembly 20 is, for example, 100, the number of the first specific array can be selected according to actual needs, for example, 5, 10, 20 or other numbers, and the arrangement position of each first electromagnet 24 of the first specific array is also determined according to actual needs, for example, as shown in Figure 3 Figure 3 The array formed by the combination of the plurality of first electromagnets 24 shown in the figure is the first specific array selected at a certain time point, and of course the selection method of the first electromagnets 24 in the first specific array is not limited to Figure 3 ​In the shown example, other combinations can be selected according to the magnetic field shape, as long as the requirements of the reaction chamber 10 on the magnetic field shape are met. In addition, the current flowing through each of the first electromagnets 24 in the first specific array can be completely the same, not completely the same, or completely different, which can be flexibly selected according to actual needs, and is not limited herein.

[0041] In one embodiment, the first electric control device is internally provided with a control program, and the first electric control device selects the first specific array according to the time point according to the control program, and controls the energization of each of the first electromagnets 24 in the first specific array at a certain time point or a certain time period, for example, 10 seconds, 15 seconds, 30 seconds, 10-15 seconds, or 100-150 seconds during sputtering, and can control the current of each of the first electromagnets 24 in the first specific array.

[0042] In the shown example, other combinations can be selected according to the magnetic field shape, as long as the requirements of the reaction chamber 10 on the magnetic field shape are met. In addition, the current flowing through each of the first electromagnets 24 in the first specific array can be completely the same, not completely the same, or completely different, which can be flexibly selected according to actual needs, and is not limited herein.

[0043] In the shown example, other combinations can be selected according to the magnetic field shape, as long as the requirements of the reaction chamber 10 on the magnetic field shape are met. In addition, the current flowing through each of the first electromagnets 24 in the first specific array can be completely the same, not completely the same, or completely different, which can be flexibly selected according to actual needs, and is not limited herein.

[0044] Specifically, when the control program of the first electric control device can be adjusted, there are many ways to adjust the control program, for example, an interface is provided on the first electric control device, which can be a USB interface or other communication interface, after the interface is connected with an external device, the control program required by actual needs is input into the first electric control device through the interface; for another example, the first electric control device can also be connected with an external device in a wireless manner, which includes but is not limited to Bluetooth, wifi, etc., after the connection with the external device, the control program is input into the first electric control device in a wireless manner, or the parameters of the control program are modified according to actual needs, which includes but is not limited to the composition of the first electromagnets 24 in the first specific array, the current of each of the first electromagnets 24 in the first specific array, and the energization sequence and duration of each of the first specific arrays.

[0045] In one embodiment, the first electromagnet 24 comprises a first core and a first coil wound outside the first core. Two ends of the first coil are connected with the first electric control device respectively. The first core extends in a direction perpendicular to the plate surface of the target 50. The first electric control device comprises a first electric control board. The first electromagnets 24 are arranged in an array on the first electric control board. In this way, the first electric control board can realize electrical connection of the first electromagnets 24 and control of the first electromagnets 24.

[0046] It should be noted that the first electric control device is not limited to the first electric control board, but can be flexibly adjusted and set as other forms of devices according to actual needs, for example, comprising a control chip and a control line electrically connected with the control chip. The control line is electrically connected with the first electromagnets 24 respectively, so as to realize control of the first electromagnets 24.

[0047] In one embodiment, the number of the first electromagnets 24 is 50-1000. Specifically, the number of the first electromagnets 24 is 100, 200, 300, 400, 500, 700 or 1000. In this embodiment, the number of the first electromagnets 24 is selected to be 200-400. In this way, the number of the first electromagnets 24 is appropriate. On the one hand, the number of the first electromagnets 24 is not too small, which can guarantee to meet various requirements of the reaction chamber 10 on the shape and size of the magnetic field, and can better improve the profile retention. On the other hand, the number of the first electromagnets 24 is not too large, so as to avoid the defects of too dense installation of the first electromagnets 24, which leads to high difficulty in installation and high requirements on the size and cost of the first electromagnets 24.

[0048] In one embodiment, the first magnetic control assembly 20 further comprises a first support. The first electromagnets 24 are mounted on the first support. The first support is connected to the back surface of the target 50, and protects the first electromagnets 24. In addition, the first support is provided with a plurality of first insertion holes. The first insertion holes are arranged correspondingly with the first electromagnets 24, and the first electromagnets 24 are arranged correspondingly in the first insertion holes. In this way, the first electromagnets 24 can be quickly mounted in the corresponding first insertion holes.

[0049] In one embodiment, the second magnetron assembly 40 is structurally similar to the first magnetron assembly 20, including a second mounting frame, a plurality of second permanent magnets connected to the second mounting frame, and a second drive mechanism (not shown in the figure) connected to the second mounting frame. The second drive mechanism is connected to the second mounting frame. Thus, on the one hand, the plurality of second permanent magnets rotate under the driving force of the second drive mechanism, which improves the distribution of the magnetic fields of the plurality of second permanent magnets in the reaction chamber 10, thereby improving the deposition uniformity; on the other hand, the magnetic field lines generated by the plurality of second permanent magnets are complementary to the magnetic field lines generated by the first magnetron assembly 20, which not only further increases the probability of electron collisions and improves the deposition rate, but also changes the electron distribution trajectory, making the magnetic field strength of various parts of the target 50 relatively uniform. This results in better thickness uniformity at various locations of the target 50, thereby improving the utilization rate of the target 50, extending the service life of the target 50, and reducing costs.

[0050] Of course, as some alternative solutions, the second drive mechanism can be omitted, and the second mounting bracket can be fixedly connected to the back of the support 30, with a plurality of second permanent magnets correspondingly non-rotatably disposed on the back of the support 30.

[0051] Please see Figure 1 , Figure 4 and Figure 5 , Figure 4 A schematic diagram of the structure of a second magnetic control component 40 according to an embodiment of this application is shown. Figure 5 A schematic diagram showing the distribution of the various second electromagnets 42 in a second magnetic control assembly 40 according to an embodiment of this application is shown. In one embodiment, the second magnetic control assembly 40 includes a second electronic control device 41 and a plurality of second electromagnets 42. All the second electromagnets 42 are electrically connected to the second electronic control device 41 and are arranged at intervals on the back side of the support portion 30.

[0052] Furthermore, the second electronic control device 41 is used to control the energization and de-energization of each second electromagnet 42, and to adjust the current magnitude of each second electromagnet 42. Thus, during sputtering deposition, under the control of the second electronic control device 41, the second electromagnets 42 of the second specific array are energized with time as the horizontal axis to achieve magnetic field movement, ensuring that the magnetic field lines generated by the first magnetic control component 20 at different time points correspond and complement each other. This results in the magnetic field strength at various locations on the target 50 remaining uniform at different time points, leading to better thickness uniformity at various locations on the target 50, thereby improving the utilization rate of the target 50, extending its service life, and reducing costs. Moreover, since each second electromagnet 42 operates under the control of the second electronic control device 41, a suitable second specific array can be flexibly selected according to actual needs, and the current magnitude of each second electromagnet 42 in the second specific array can be flexibly controlled according to actual needs. This allows for adaptation to various types of reaction chambers 10, providing wide adaptability and improving the interchangeability between different reaction chambers 10.

[0053] In addition, by adjusting the current magnitude of each second electromagnet 42, the magnetic field strength near the surface of the substrate 70 can be controlled, the distribution of plasma on the surface of the substrate 70 can be optimized, thereby improving the uniformity of deposition.

[0054] It should be noted that, similar to the first magnetic control component 20, the second specific array refers to multiple of all the second electromagnets 42 in the second magnetic control component 40. For example, the number of second electromagnets 42 in the second magnetic control component 40 is, for example, 100. The number of the second specific array can be selected according to actual needs, for example, 5, 10, 20, or other numbers, and the arrangement position of each second electromagnet 42 in the second specific array is also determined according to actual needs, for example, Figure 5 As shown, Figure 5 The array formed by multiple second electromagnets 42, indicated by filled diagonal lines, is the second specific array selected at a certain point in time. Of course, the selection method of the second electromagnets 42 in this second specific array is not limited to... Figure 5 The example shown can be adapted to other combinations based on the shape of the magnetic field, as long as the requirements of the reaction chamber 10 for the shape of the magnetic field are met. Furthermore, the magnitudes of the currents supplied to each of the second electromagnets 42 in the second specific array can be exactly the same, not exactly the same, or completely different; the specific selection can be made flexibly according to actual needs and is not limited here.

[0055] In one embodiment, the second electric control device 41 is internally provided with a control program, and the second electric control device 41 selects a second specific array according to the time point according to the control program, and controls the respective second electromagnets 42 of the second specific array to be powered at a certain time point or a certain time period, for example, the 10th second, the 15th second, the 30th second, the 10th-15th second, or the 100th-150th second during the sputtering process, and the respective current of the second electromagnets 42 of the second specific array can be controlled.

[0056] Preferably, the respective second electromagnets 42 of the second specific array are powered at a certain time point, and of course, can also be powered at each time point in a certain time period, which is not limited here, and can be flexibly adjusted and set according to actual needs, which is not limited here.

[0057] Preferably, the respective second electromagnets 42 of the second specific array are powered at a certain time point, and of course, can also be powered at each time point in a certain time period, which is not limited here, and can be flexibly adjusted and set according to actual needs, which is not limited here.

[0058] Specifically, when the control program of the second electric control device 41 can be adjusted, there are many ways to adjust the control program of the second electric control device 41, for example, the second electric control device 41 is provided with an interface, and after the interface is connected with an external device, the control program of the actual demand is input into the second electric control device 41 through the interface; for example, the second electric control device 41 can also be connected with an external device in a wireless manner, and the control program is input into the second electric control device 41 in a wireless manner, or the parameters of the control program are modified according to actual needs, which include but are not limited to the composition of the second electromagnets 42 in the second specific array, the current of the respective second electromagnets 42 in the second specific array, and the power-on sequence and power-on time of the respective second specific arrays.

[0059] Please refer to Figure 6In one embodiment, the second electromagnet 42 comprises a second core 421 and a second coil 422 wound outside the second core 421. Two ends of the second coil 422 are connected with the second electric control device 41 respectively. The extending direction of the second core 421 is perpendicular to the supporting surface of the supporting part 30. The second electric control device 41 comprises a second electric control board, and each second electromagnet 42 is arranged on the second electric control board in an array. In this way, the second electric control board can realize electrical connection of each second electromagnet 42 together and control of each second electromagnet 42.

[0060] It should be noted that, similar to the first electric control device, the second electric control device 41 is not limited to be a second electric control board, but can be flexibly adjusted and set to other forms of devices according to actual needs, for example, comprising a control chip and a control line electrically connected with the control chip. By connecting the control line with each second electromagnet 42 respectively, the control of each second electromagnet 42 can be realized.

[0061] In one embodiment, the number of the second electromagnet 42 is 10-300. Specifically, the number of the second electromagnet 42 is 10, 20, 50, 100, 200 or 300. In this embodiment, the number of the second electromagnet 42 is selected to be 20-100. In this way, the number of the second electromagnet 42 is appropriate. On the one hand, the number of the second electromagnet 42 is not too small to ensure that various requirements of the reaction chamber 10 on the shape and size of the magnetic field can be met, and the shape retention can be improved better. On the other hand, the number of the second electromagnet 42 is not too large to avoid the defects of too dense second electromagnet 42, which leads to difficult installation and high requirements on the size and cost of the second electromagnet 42.

[0062] Please refer to Figure 1 and Figure 4 In one embodiment, the second magnetic control assembly 40 further comprises a second bracket 43. Each second electromagnet 42 is installed on the second bracket 43. The second bracket 43 is connected to the back surface of the supporting part 30 to protect each second electromagnet 42. In addition, the second bracket 43 is provided with a plurality of second insertion holes 431, each second insertion hole 431 is provided correspondingly to each second electromagnet 42, and the second electromagnet 42 is arranged correspondingly in the second insertion hole 431. In this way, each second electromagnet 42 can be quickly installed in each corresponding second insertion hole 431.

[0063] In one embodiment, the physical vapor deposition device further comprises a thickness measurer (not shown in the figure). The thickness measurer is used to measure the thickness of the target 50, and is signal connected with the second electric control device 41. The second electric control device 41 is used to control the operation of each second electromagnet 42 according to the thickness sensed by the thickness measurer. In this way, by sensing the thickness of each part of the target 50 through the thickness measurer, the second electromagnet 42 corresponding to the part with larger thickness is controlled to be powered on and the current is increased, and the second electromagnet 42 corresponding to the part with smaller thickness is controlled to be powered off and the current is decreased, so that the part with larger thickness of the target 50 can be etched more, the part with smaller thickness of the target 50 can be etched less or not etched, and thus uniform etching of the target 50 can be ensured through continuous feedback and adjustment.

[0064] Optionally, the thickness measurer includes but is not limited to an eddy current sensor, an optical image sensor, etc.

[0065] Of course, the thickness measurer can not be provided, but the thickness of each part of the target 50 can be determined according to the slicing result of the target 50, and each second electromagnet 42 can be adjusted to work accordingly according to the thickness of each part of the target 50.

[0066] In one embodiment, the physical vapor deposition device further comprises at least one third magnetic control assembly (not shown in the figure) arranged at the side of the reaction chamber 10. In this way, the third magnetic control assembly generates a magnetic field at the side of the reaction chamber 10 when it works, which can further improve the uniformity of film deposition on the substrate 70.

[0067] In one embodiment, the third magnetic control assembly can be arranged as at least one permanent magnet or at least one electromagnet, which can be flexibly adjusted and arranged according to actual needs.

[0068] Please refer to Figure 1 In one embodiment, the physical vapor deposition device further comprises a vacuum pump 81, a direct current power supply 82 and an alternating current power supply 83. The vacuum pump 81 is connected with the reaction chamber 10 and is used to pump out the gas inside the reaction chamber 10; the direct current power supply 82 is electrically connected with the target 50, and the alternating current power supply 83 is electrically connected with the second magnetic control assembly 40.

[0069] In one embodiment, the support part 30 is specifically an electrostatic chuck, which supports and fixes the substrate 70 by electrostatic adsorption.

[0070] Specifically, the physical vapor deposition device further comprises a radio frequency power supply matcher 84. The alternating current power supply 83 is electrically connected with the electrostatic chuck through the radio frequency power supply matcher 84.

[0071] It is noted that the gas inside the reaction chamber 10 includes, but is not limited to, Ar, Kr, Xe. In this embodiment, the metal sputter deposition will be specifically performed with the gas being Ar.

[0072] Furthermore, it is noted that sputtering is a phenomenon in which atoms on the surface of the target 50 are dislodged by energetic ions striking the target 50 and are deposited as a thin film on the surface of the semiconductor workpiece. The target 50 can be subjected to either direct current or radio frequency current. When the current applied is direct current, it is referred to as direct current sputtering (DC sputtering). When the current applied is radio frequency, it is referred to as radio frequency sputtering (RF sputtering). From an economic and efficiency standpoint, argon is the most commonly used gas. When argon is rapidly bombarded by electrons, argon ions are produced. At this point, the number of electrons increases and is simultaneously re-accelerated by an electric field in order to re-engage in ionization reactions. As such, a glow discharge is produced like an avalanche. The argon ions are attracted to the target 50 (negative electrode) and are accelerated to collide with the target 50, dislodging the surface atoms and depositing them on the surface of the semiconductor workpiece.

[0073] During sputtering, positively charged noble gas ions are attracted to the negatively charged target 50. Specifically, a magnetron assembly can be operated to confine electrons above the negatively charged target 50, thereby increasing the efficiency of the initial ionization process and allowing the plasma to be generated at lower pressures. This attraction ultimately causes the positively charged noble gas ions to strike the target 50 at extremely high velocities during the collision cascade. The striking positively charged noble gas ions can have enough force to dislodge and eject (sputter) atoms from the surface of the target 50. The atoms from the target 50 traverse the evacuated reaction chamber 10 and can be precisely deposited on the surface of the substrate as a thin film of the target 50 material in a typical line-of-sight cosine distribution.

[0074] In one embodiment, the physical vapor deposition apparatus includes a controller, such as a central processing unit. The controller can be used to monitor the voltage applied to the target 50 during sputtering. The controller can further detect any voltage instability. For example, the controller can detect voltage instability resulting from an arc within the reaction chamber 10. The controller can also be used to monitor the vacuum level within the reaction chamber 10 to detect any vacuum instability (i.e., pressure change) in the evacuated reaction chamber 10. For example, the controller can be used to detect an increase or decrease in pressure within the reaction chamber 10.

[0075] If the controller detects voltage and / or vacuum instability, the controller can generate an alarm, such as a DC power instability alarm and / or a vacuum deterioration alarm, and immediately stop the sputtering process. Thus, the controller can be used to reduce and / or prevent sputtering of the target 50 material, as discussed in detail below.

[0076] Optionally, the physical vapor deposition device further comprises a backing plate 60. The target 50 can be bonded to the front side of the backing plate 60, i.e. the side of the backing plate 60 opposite the electrostatic chuck, using any suitable bonding method. For example, the target 50 can be diffusion bonded, brazed or welded to the backing plate 60. Other bonding processes are within the scope of the present disclosure. The backing plate 60 can provide mechanical strength, electrical conductivity and thermal conductivity to the target 50. For example, the backing plate 60 can be formed of copper, non-magnetic stainless steel, molybdenum, aluminum, titanium, alloys (including but not limited to aluminum-copper alloys), etc. Other materials suitable for the backing plate 60 are within the scope of the present disclosure. The target 50 can be formed of any sputterable material. For example, the target 50 can be formed of aluminum, copper, cobalt, tantalum, titanium, cobalt, platinum, gold, silver, lead, alloys thereof, etc. Other materials suitable for the target 50 are within the scope of the present disclosure.

[0077] In some embodiments, the backing plate 60 and the target 50 can be formed of different materials. For example, the target 50 can be formed of tantalum, titanium, cobalt, platinum, etc. and the backing plate 60 can be formed of copper, non-magnetic stainless steel, aluminum, etc.

[0078] In one embodiment, a physical vapor deposition method is provided. The physical vapor deposition method employs the physical vapor deposition device of any of the above embodiments. The physical vapor deposition method comprises: causing the magnetic field lines generated by the first magnetron assembly 20 when the first magnetron assembly 20 is in operation to be complementary to the magnetic field lines generated by the second magnetron assembly 40 when the second magnetron assembly 40 is in operation.

[0079] The physical vapor deposition method described above, the magnetic field generated by the first magnetron assembly 20 at the target 50 when the first magnetron assembly 20 is in operation causes positive ions of the plasma to be attracted by the cathode negative electricity, to bombard the target 50, to knock out atoms of the target 50, and to deposit onto the substrate 70 to obtain a film layer. In addition, the magnetic field lines generated by the second magnetron assembly 40 when the second magnetron assembly 40 is in operation are complementary to the magnetic field lines generated by the first magnetron assembly 20, which not only further increases the electron collision probability and improves the deposition rate, but also changes the electron distribution trajectory, so that the magnetic field strength at each part of the target 50 is relatively uniform. In this way, the thickness uniformity of each position of the target 50 is good, which in turn can improve the utilization rate of the target 50, prolong the service life of the target 50, and reduce the cost.

[0080] In one embodiment, the second magnetron assembly 40 comprises a plurality of second electromagnets 42. Each second electromagnet 42 is arranged at the back of the support portion 30 in a spaced manner.

[0081] Optionally, the physical vapor deposition method comprises:

[0082] Step S110, obtaining the thickness of each part of the target 50;

[0083] Step S120, determining the first part on the target 50 whose thickness is greater than a preset range, and controlling the second electromagnet 42 corresponding to the position of the first part to be powered on, to increase the current size or to increase the power-on time.

[0084] The second part with a thickness less than the preset range is determined, and the second electromagnet 42 corresponding to the position of the second part is controlled to be powered off, to have a reduced current size, or to have a reduced energizing time.

[0085] In this way, the first part with a thickness greater than the preset range in the target material 50 can be etched more, and the second part with a thickness less than the preset range in the target material 50 can be etched less or not etched, so that uniform etching of the target material 50 can be ensured through continuous feedback and adjustment.

[0086] It should be noted that the preset range is flexibly adjusted and set according to actual needs, and is not limited herein. As an example, the preset range can be determined according to the average value of the actual thickness of each part of the target material 50, or preset according to a large amount of experimental parameter data and experience summary.

[0087] In the description of the present application, it should be understood that if these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0088] In addition, if these terms "first", "second" appear, these terms are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features limited by "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present application, if the term "a plurality of" appears, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise explicitly specified and limited.

[0089] In the present application, unless otherwise explicitly specified and limited, if the terms "mounting", "connecting", "connecting", "fixing" and the like appear, these terms should be understood in a broad sense. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication or interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0090] In this application, unless otherwise explicitly specified and limited, if there is a description of a first feature "on" or "under" a second feature, etc., it can mean that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature "over", "above" and "on top of" the second feature can be that the first feature is directly above or obliquely above the second feature, or only means that the first feature is horizontally higher than the second feature. The first feature "under", "below" and "underneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or only means that the first feature is horizontally lower than the second feature.

[0091] It should be noted that if an element is referred to as being "fixed" or "attached" to another element, it can be directly on the other element or there can be an intervening element. If an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or intervening elements can be present. If present, the terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions as used herein are for purposes of explanation only and are not intended to be limiting.

[0092] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, but it should be considered that any combination of the technical features is within the scope of the present disclosure, as long as the combination does not result in contradictions.

[0093] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be noted that for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A physical vapor deposition apparatus characterized by comprising: The physical vapor deposition device comprises: a reaction chamber, a top of the reaction chamber being provided with a target material; a first magnetron assembly arranged at a back of the target material, the first magnetron assembly comprising a first mounting frame, a plurality of first permanent magnets connected to the first mounting frame, and a first driving mechanism connected to the first mounting frame, the first driving mechanism being used to drive the first mounting frame to rotate; a support portion arranged inside the reaction chamber and used to support a substrate, the support portion being arranged opposite to the target material; and a second magnetron assembly arranged at a back of the support portion, magnetic field lines generated by the first magnetron assembly when working being complementary to magnetic field lines generated by the second magnetron assembly when working; wherein the second magnetron assembly comprises a second mounting frame and a plurality of second permanent magnets connected to the second mounting frame, the second mounting frame being fixedly connected to the back of the support portion, and the plurality of second permanent magnets being correspondingly arranged at the back of the support portion in a non-rotatable manner.

2. The physical vapor deposition device of claim 1, wherein, The second magnetron assembly comprises a second electric control device and a plurality of second electromagnets, all the second electromagnets being electrically connected to the second electric control device and arranged at the back of the support portion in a spaced manner, the second electric control device being used to control power-on and power-off of each second electromagnet and to adjust current of each second electromagnet.

3. The physical vapor deposition device of claim 2, wherein, The second electromagnet comprises a second iron core and a second coil wound outside the second iron core, two ends of the second coil being respectively connected to the second electric control device, an extension direction of the second iron core being perpendicular to a support surface of the support portion, and the second electric control device comprising a second electric control board, each second electromagnet being arranged on the second electric control board in an array manner.

4. The physical vapor deposition device of claim 2, wherein, The number of the second electromagnets is 10-300.

5. The physical vapor deposition device of claim 2, wherein, The physical vapor deposition device further comprises a thickness measurer, the thickness measurer being used to measure thickness of the target material, the thickness measurer being signal-connected to the second electric control device, and the second electric control device being used to control working of each second electromagnet according to thickness sensed by the thickness measurer.

6. The physical vapor deposition device of claim 1, wherein, The physical vapor deposition device further comprises at least one third magnetron assembly arranged at a side portion of the reaction chamber.

7. The physical vapor deposition device of any of claims 1 to 6, wherein, The physical vapor deposition device further comprises a vacuum pump, a direct-current power supply and an alternating-current power supply, the vacuum pump being connected to the reaction chamber in a communication manner and being used to extract gas inside the reaction chamber to outside, the direct-current power supply being electrically connected to the target material, and the alternating-current power supply being electrically connected to the second magnetron assembly.

8. A physical vapor deposition method characterized by, The physical vapor deposition method comprises: making magnetic field lines generated by the first magnetron assembly when working be complementary to magnetic field lines generated by the second magnetron assembly when working.

9. The physical vapor deposition method according to claim 8, wherein, The second magnetron assembly comprises a plurality of second electromagnets, each second electromagnet being arranged at the back of the support portion in a spaced manner, and the physical vapor deposition method comprises: obtaining thickness of each portion of the target material; The first part with thickness greater than the preset range on the target material is determined, the second electromagnet corresponding to the position of the first part is controlled to be powered on, the current size is increased, or the power-on time is increased; and / or, the second part with thickness less than the preset range on the target material is determined, the second electromagnet corresponding to the position of the second part is controlled to be powered off, the current size is reduced, or the power-on time is reduced.

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