A testing device for optoelectronic chips and a testing method thereof

Abstract

The application provides a photoelectric chip testing device and a testing method thereof. The testing device comprises a testing seat, a probe, a light source and a code disc. The testing seat is used for fixing a testing chip. The probe is arranged in the testing seat and corresponds to a PAD disc of the testing chip and is electrically connected with the PAD disc. The light source is used for providing light to the testing chip and is arranged opposite to a photosensitive area of the testing chip. The code disc is used for adjusting an area of the light of the light source irradiating to the photosensitive area of the testing chip. The code disc is arranged between the testing chip and the light source. The code disc is provided with at least one light transmission area. When the code disc rotates, the light of the light source irradiates to the photosensitive area through the light transmission area. The photoelectric chip testing device and the testing method thereof provided by the application can change the light energy of the light irradiating to the photosensitive area by changing the area of the light of the light source irradiating to the photosensitive area, thereby improving the accuracy of the testing result.

Description

A testing device and method for an optoelectronic chip Technical Field

[0001] This invention relates to the field of optoelectronic testing technology, and in particular to a testing device and method for optoelectronic chips. Background Technology

[0002] An optoelectronic chip is a device that converts light signals into electrical signals. Its basic principle utilizes the photoelectric effect and the properties of semiconductor materials. The photoelectric effect refers to the phenomenon where electrons are generated when light shines on a metal or semiconductor surface. Semiconductor materials, on the other hand, have electrical conductivity and can form electron-hole pairs under certain conditions, thereby generating an electric current.

[0003] The core component of an optoelectronic chip is the photodiode, a device that converts light signals into electrical signals. The structure of a photodiode is similar to that of a regular diode, but its PN junction region is specially treated to make it sensitive to light. When light shines on the PN junction region of the photodiode, electron-hole pairs are generated, thus producing a current. The magnitude of this current is directly proportional to the intensity of the light.

[0004] Optoelectronic chips require testing the photoelectric sensitivity and photoelectric response curve of the photosensitive area. Existing testing equipment, as shown in Figure 1, typically places the test chip 11 face-up on a test socket 12. Probes 13 are positioned within the test socket 12 and connected to the PAD (passivation opening, the chip's pin, encapsulated inside the chip) 111 of the test chip 11 to obtain the photocurrent. A light source 14 is positioned directly above the photosensitive area 112 of the test chip 11. During testing, the area of ​​the photosensitive area 112 illuminated by the light source 14 remains constant. By adjusting the current of the light source 14, the light intensity illuminating the photosensitive area 112 is changed, and the photocurrent of the photosensitive area 112 under different light intensities is obtained. This yields the photoelectric response curve, which is then used to calculate the photoelectric sensitivity. This testing method has the following drawbacks: different LED light sources will result in varying brightness and brightness curves, affecting test accuracy. Especially at low currents, the luminous intensity of the LED light source is non-linear with its current value, leading to inaccuracies in the photoelectric response curve and photoelectric sensitivity test results.

[0005] Therefore, it is necessary to provide a testing device and method for optoelectronic chips to effectively solve the above problems. Summary of the Invention

[0006] This invention provides a testing device and method for optoelectronic chips. By changing the area of ​​light illuminating the photosensitive area, the light energy illuminating the photosensitive area is changed, thereby improving the accuracy of the test results.

[0007] This invention provides a testing apparatus for optoelectronic chips, comprising:

[0008] A test socket is provided to fix a test chip. The test socket is provided with probes, which are correspondingly set with the PAD disk of the test chip and electrically connected to the PAD disk.

[0009] A light source, used to provide light to the test chip, is positioned directly opposite the photosensitive area of ​​the test chip;

[0010] A code disk is used to adjust the area of ​​the photosensitive area of ​​the test chip illuminated by the light from the light source; the code disk is disposed between the test chip and the light source; the code disk is provided with at least one light-transmitting area, and when the code disk rotates, the light from the light source passes through the light-transmitting area and illuminates the photosensitive area.

[0011] Preferably, the code disk is arranged parallel to the test chip, the code disk is circular, the photosensitive area is rectangular, the radius of the code disk is greater than the length of the photosensitive area, the projection of the code disk on the test chip completely covers the photosensitive area, and the photosensitive area is located on one side of the central axis of the code disk and arranged radially.

[0012] Preferably, the light-transmitting area is fan-shaped, and the ring containing the light-transmitting area has the same central axis as the code disk; the radial center line of the light-transmitting area and the center point of the photosensitive area are on the same arc.

[0013] Preferably, there are four light-transmitting areas, namely light-transmitting area A, light-transmitting area B, light-transmitting area C and light-transmitting area D, which are equally spaced. The light-transmitting areas A, B, C and D all have the same central angle. The radial widths of the light-transmitting areas A, B, C and D decrease sequentially.

[0014] Preferably, it further includes a driving component, wherein a rotating hole is provided at the center of the code disk, and the rotating shaft of the driving component is disposed in the rotating hole to drive the code disk to rotate.

[0015] Preferably, the device also includes an oscilloscope, the probe being connected to the oscilloscope to measure and display the photocurrent.

[0016] Based on the same concept, embodiments of the present invention also provide a testing method for an optoelectronic chip, comprising the following steps:

[0017] Install the test chip, probes, test socket, code disk, and light source;

[0018] Connect the probe to the oscilloscope, turn on the light source, start the driver, and drive the code disk to rotate.

[0019] The photocurrent curve is obtained using the oscilloscope, and the photoelectric sensitivity is calculated.

[0020] Preferably, the test base is inverted U-shape, the code disk is circular, the photosensitive area is rectangular, the radius of the code disk is greater than the length of the photosensitive area, and the test method further includes:

[0021] The side of the test chip with the PAD disk is embedded into the test socket;

[0022] The probe is inserted and positioned at the top of the test socket corresponding to the PAD disk, and the probe is electrically connected to the PAD disk;

[0023] Fix the test socket;

[0024] The code disk is positioned below and parallel to the test chip, and the projection of the code disk onto the test chip completely covers the photosensitive area, such that the photosensitive area is located on one side of the central axis of the code disk and is arranged radially.

[0025] The light source is positioned below the code disk and directly opposite the photosensitive area.

[0026] Preferably, the light-transmitting area is fan-shaped, and the ring containing the light-transmitting area has the same central axis as the code disk; the radial centerline of the light-transmitting area and the center point of the photosensitive area are on the same arc; the testing method further includes: the photocurrent is calculated using the following formula:

[0027] I = E * S * η

[0028] Where I is the photocurrent, E is the light intensity of the light source, S is the area of ​​the photosensitive area illuminated by the light, and η is the photoelectric sensitivity;

[0029] During the process from when the photosensitive area begins to enter the light-transmitting area until the entire photosensitive area begins to enter the light-transmitting area, the area of ​​the photosensitive area illuminated by light is calculated using the following formula:

[0030]

[0031] Where S is the area of ​​the photosensitive area illuminated by light; R is the outer diameter of the light-transmitting area; r is the inner diameter of the light-transmitting area; d is the radial illumination width of the photosensitive area; a is the angular velocity of the code disk rotation; and t is the time from when the photosensitive area begins to enter the light-transmitting area.

[0032] During the process from when the photosensitive area begins to enter the light-transmitting area until the entire photosensitive area begins to enter the light-transmitting area, the photoelectric sensitivity is calculated using the following formula:

[0033]

[0034] Where η is the photoelectric sensitivity, I is the photocurrent, E is the light intensity of the light source, R is the outer diameter of the light-transmitting area, r is the inner diameter of the light-transmitting area, d is the radial illumination width of the photosensitive area, a is the angular velocity of the code disk rotation, and t is the time from when the photosensitive area begins to enter the light-transmitting area.

[0035] Preferably, there are four light-transmitting areas, including light-transmitting area A, light-transmitting area B, light-transmitting area C, and light-transmitting area D, which are equally spaced. Each of these areas has the same central angle. The radial widths of the light-transmitting areas A, B, C, and D decrease sequentially. The testing method further includes calculating the corresponding photoelectric sensitivity for each of the light-transmitting areas A, B, C, and D.

[0036] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0037] This invention provides a testing device and method for an optoelectronic chip. A code disk is placed between the test chip and a light source to adjust the area of ​​the photosensitive area of ​​the test chip illuminated by the light from the light source. By changing the area of ​​the light illuminating the photosensitive area, the light energy of the light illuminating the photosensitive area is changed. This avoids the influence of the nonlinearity between current and light intensity on the test results when changing the light intensity of the light source by changing the current of the light source, thus improving the accuracy of the test results.

[0038] Furthermore, multiple light-transmitting zones with different radial widths are set up to increase the dynamic range of light energy reaching the photosensitive area; the photoelectric sensitivity within different dynamic ranges is tested to further improve the accuracy of the test results. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention, but not all embodiments. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 is a schematic diagram of the existing testing device for optoelectronic chips;

[0041] Figure 2 is a schematic diagram of the structure of a testing device for an optoelectronic chip provided in an embodiment of the present invention;

[0042] Figure 3 is a schematic diagram of the encoder structure provided in an embodiment of the present invention;

[0043] Figure 4 is a schematic diagram showing the relative position change of the photosensitive area and the light-transmitting area during the rotation of the code disk according to an embodiment of the present invention.

[0044] In the picture:

[0045] 11. Test chip; 111. PAD disk; 112. Photosensitive area; 12. Test socket; 13. Probe; 14. Light source;

[0046] 21. Test chip; 211. PAD disk; 212. Photosensitive area; 22. Test socket; 23. Probe; 24. Light source; 25. Code disk; 251. Light-transmitting area A; 252. Light-transmitting area B; 253. Light-transmitting area C; 254. Light-transmitting area D; 255. Rotating hole; 26. Light source fixing cover. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0048] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0049] It should be noted that the axial, radial, and circumferential directions mentioned in the embodiments of the present invention refer to the axial, radial, and circumferential directions of the code disk, respectively.

[0050] To address the problems existing in the prior art, this invention provides a testing device and method for optoelectronic chips. By changing the area of ​​light illuminating the photosensitive area, the light energy illuminating the photosensitive area is altered, thereby improving the accuracy of the test results.

[0051] Figure 2 is a schematic diagram of the structure of a testing device for an optoelectronic chip provided in an embodiment of the present invention; Figure 3 is a schematic diagram of the structure of a code disk provided in an embodiment of the present invention; Figure 4 is a schematic diagram of the relative position change between the photosensitive area and the light-transmitting area during the rotation of the code disk provided in an embodiment of the present invention.

[0052] Referring now to Figures 2 to 4, an embodiment of the present invention provides a testing apparatus for an optoelectronic chip, comprising:

[0053] Test socket 22 is used to fix test chip 21. Test socket 22 is provided with probe 23. Probe 23 is set to correspond with PAD disk 211 of test chip 21 and is electrically connected to PAD disk 211.

[0054] Light source 24 is used to provide light to test chip 21. Light source 24 is positioned directly opposite the photosensitive area 212 of test chip 21. Light source 24 is usually an LED light source.

[0055] The code disk 25 is used to adjust the area of ​​the photosensitive area 212 of the test chip 21 illuminated by the light from the light source 24. The code disk 25 is disposed between the test chip 21 and the light source 24. The code disk 25 is provided with at least one light-transmitting area 251, 252, 253, 254. When the code disk 25 rotates, the light from the light source 24 passes through the light-transmitting areas 251, 252, 253, 254 and illuminates the photosensitive area 212.

[0056] In some embodiments, the code disk 25 is arranged parallel to the test chip 21. The code disk 25 is circular, and the photosensitive area 212 is rectangular. The radius of the code disk 25 is greater than the length of the photosensitive area 212. The projection of the code disk 25 onto the test chip 21 completely covers the photosensitive area 212. The photosensitive area 212 is located on one side of the central axis of the code disk 25 and is arranged radially.

[0057] In some embodiments, the light-transmitting areas 251, 252, 253, and 254 are arranged in a fan-shaped annulus, and the annulus containing the light-transmitting areas 251, 252, 253, and 254 has the same central axis as the code disk 25; the radial center lines of the light-transmitting areas 251, 252, 253, and 254 are on the same arc as the center point of the photosensitive area 212, that is...

[0058]

[0059] Where R is the outer diameter of the light-transmitting areas 251, 252, 253, and 254, r is the inner diameter of the light-transmitting areas 251, 252, 253, and 254, R0 is the distance between the midpoint of the outer side of the photosensitive area 212 and the center of the code disk 25, and r0 is the distance between the midpoint of the inner side of the photosensitive area 212 and the center of the code disk 25.

[0060] In one embodiment, there are four light-transmitting areas 251, 252, 253, and 254, which respectively include light-transmitting area A 251, light-transmitting area B 252, light-transmitting area C 253, and light-transmitting area D 254 arranged at equal intervals. Light-transmitting areas A 251, B 252, C 253, and D 254 all have the same central angle. The radial widths of light-transmitting areas A 251, B 252, C 253, and D 254 decrease sequentially.

[0061] The radial center lines of light-transmitting areas A 251, B 252, C 253, and D 254 lie on the same arc as the center point of the photosensitive area 212.

[0062]

[0063] Wherein, R0 is the distance between the midpoint of the outer edge of the photosensitive area 212 and the center of the code disk 25, and r0 is the distance between the midpoint of the inner edge of the photosensitive area 212 and the center of the code disk 25; R A The outer diameter of the light-transmitting area A is 251, r A R is the inner diameter of the light-transmitting area A, which is 251. B The outer diameter of the light-transmitting area B is 252, r B The inner diameter of the light-transmitting area B is 252; R C The outer diameter of the light-transmitting C region is 253, r C The inner diameter of the light-transmitting C zone is 253; R D The outer diameter of the light-transmitting D region is 254, r D The inner diameter of the light-transmitting D zone is 254.

[0064] In some embodiments, a drive unit is also included. A rotating hole 255 is provided at the center of the code disk 25, and the rotating shaft of the drive unit is disposed in the rotating hole 255 to drive the code disk 25 to rotate. The drive unit is typically a motor.

[0065] In some embodiments, an oscilloscope is also included, with probe 23 connected to the oscilloscope to measure the photocurrent and display the waveform of the photocurrent.

[0066] In some embodiments, a light source fixing cover 26 is also included. The light source fixing cover 26 fixes the light source 24 and blocks external light to prevent external light from shining on the photosensitive area 212 and affecting the test results.

[0067] This invention also provides a method for testing an optoelectronic chip, comprising the following steps:

[0068] S1: Install test chip 21, probe 23, test socket 22, code disk 25 and light source 24;

[0069] S11: The test socket 22 is an inverted U-shape; the side of the test chip 21 with the PAD disk 211 is embedded into the test socket 22; a probe 23 is inserted into the top of the test socket 22 corresponding to the PAD disk 211, and the probe 23 is electrically connected to the PAD disk 211; since the probe 23 is located above the test chip 21, it is beneficial for the probe 23 to be electrically connected to the PAD disk 211.

[0070] S12: Fix the test base 22; set the code disk 25 below the test chip 21 and parallel to the test chip 21, the projection of the code disk 25 on the test chip 21 completely covers the photosensitive area 212, so that the photosensitive area 212 is located on one side of the central axis of the code disk 25 and is arranged radially.

[0071] S13: Position the light source 24 below the code disk 25 and directly opposite the photosensitive area 212.

[0072] S2: Connect probe 23 to the oscilloscope, turn on the light source 24, start the driver, and drive the code disk 25 to rotate;

[0073] S3: Obtain the photocurrent curve using an oscilloscope and calculate the photoelectric sensitivity.

[0074] In practical implementation, the photocurrent is calculated using the following formula:

[0075] I = E * S * η

[0076] Where I is the photocurrent, E is the light intensity of the light source 24, S is the area of ​​the photosensitive area 212 illuminated by the light, and η is the photoelectric sensitivity.

[0077] Referring to Figure 4, based on the relative positional relationship between the photosensitive area 212 and the code disk 25, the relative movement process of the photosensitive area 212 and the light-transmitting areas 251, 252, 253, and 254 includes the following three processes:

[0078] As the photosensitive area 212 begins to enter the light-transmitting areas 251, 252, 253, and 254, until all of the photosensitive area 212 is now within the light-transmitting areas 251, 252, 253, and 254, the area of ​​the photosensitive area 212 illuminated by light increases linearly, and the light energy received by the photosensitive area 212 also increases linearly. Consequently, the photocurrent of the test chip 21 increases linearly with the increase in the light-transmitting area of ​​the code disk 25.

[0079] From the moment the photosensitive area 212 begins to enter the light-transmitting areas 251, 252, 253, and 254 until the photosensitive area 212 begins to leave the light-transmitting areas 251, 252, 253, and 254; during this process, the area of ​​light illuminating the photosensitive area 212 no longer increases, the light energy received by the photosensitive area 212 remains constant, and the photocurrent of the test chip 21 remains constant.

[0080] As the photosensitive area 212 begins to leave the light-transmitting areas 251, 252, 253, and 254, until the photosensitive area 212 completely leaves the light-transmitting areas 251, 252, 253, and 254, the area of ​​light illuminating the photosensitive area 212 decreases linearly, and the light energy received by the photosensitive area 212 also decreases linearly. As the light-transmitting area of ​​the code disk 25 decreases, the photocurrent of the test chip 21 will decrease linearly.

[0081] Therefore, it is relatively easy to distinguish the above three processes from the photocurrent curve displayed on the oscilloscope.

[0082] Since there are four light-transmitting areas 251, 252, 253, and 254, which include light-transmitting area A 251, light-transmitting area B 252, light-transmitting area C 253, and light-transmitting area D 254 arranged at equal intervals, the radial widths of light-transmitting area A 251, light-transmitting area B 252, light-transmitting area C 253, and light-transmitting area D 254 decrease sequentially.

[0083] The radial width of the light-transmitting area A 251 and the light-transmitting area B 252 is greater than the radial length of the photosensitive area 212. Taking the photosensitive area 212 entering the light-transmitting area A 251 as an example, the process of the photosensitive area 212 entering the light-transmitting area B 252 is similar to that of entering the light-transmitting area A 251, and will not be described again.

[0084] During the process from when the photosensitive area 212 begins to enter the light-transmitting area A 251 until the entire photosensitive area 212 enters the light-transmitting area A 251, the area of ​​the photosensitive area 212 illuminated by light is calculated using the following formula:

[0085]

[0086] Where S is the area of ​​the photosensitive area 212 illuminated by light; R0 is the distance between the midpoint of the outer side of the photosensitive area 212 and the center of the code disk 25; r0 is the distance between the midpoint of the inner side of the photosensitive area 212 and the center of the code disk 25; d0 is the radial length of the photosensitive area 212; a is the angular velocity of the code disk 25; and t is the time from when the photosensitive area 212 begins to enter the light-transmitting area A 251.

[0087] Therefore, during this period, the photoelectric sensitivity is calculated using the following formula:

[0088]

[0089] Where η is the photoelectric sensitivity, I is the photocurrent, E is the light intensity of the light source 24, R0 is the distance between the midpoint of the outer side of the photosensitive area 212 and the center of the code disk 25, r0 is the distance between the midpoint of the inner side of the photosensitive area 212 and the center of the code disk 25, d0 is the radial length of the photosensitive area 212, a is the angular velocity of the code disk 25, and t is the time from when the photosensitive area 212 begins to enter the light-transmitting area A 251.

[0090] The radial widths of the light-transmitting C region 253 and the light-transmitting D region 254 are smaller than the radial length of the photosensitive region 212. Taking the photosensitive region 212 entering the light-transmitting C region 253 as an example, the process of the photosensitive region 212 entering the light-transmitting D region 254 is similar to that of entering the light-transmitting A region 251, and will not be described in detail here.

[0091] During the process from when the photosensitive area 212 begins to enter the light-transmitting area C 253 until the entire photosensitive area 212 enters the light-transmitting area C 253, the area of ​​the photosensitive area 212 illuminated by light is calculated using the following formula:

[0092]

[0093] Where S is the area of ​​the photosensitive area 212 illuminated by light; R C The outer diameter of the light-transmitting C region is 253, r C The inner diameter of the light-transmitting area C is 253, d C denoted as radial width of the light-transmitting C area 253, a as angular velocity of the code disk 25, and t as the time from which the photosensitive area 212 begins to enter the light-transmitting C area 253.

[0094] Therefore, during this period, the photoelectric sensitivity is calculated using the following formula:

[0095]

[0096] Where η is the photoelectric sensitivity, I is the photocurrent, E is the light intensity of the light source 24, and R C The outer diameter of the light-transmitting C region is 253, r C The inner diameter of the light-transmitting area C is 253, d C denoted as radial width of the light-transmitting C area 253, a as angular velocity of the code disk 25, and t as the time from which the photosensitive area 212 begins to enter the light-transmitting C area 253.

[0097] Multiple light-transmitting areas 251, 252, 253, and 254 with different radial widths are set up to increase the dynamic range of light energy illuminating the photosensitive area 212; the photoelectric sensitivity within different dynamic ranges is tested to further improve the accuracy of the test results.

[0098] The radial center lines of light-transmitting areas A 251, B 252, C 253, and D 254 lie on the same arc as the center point of the photosensitive area 212.

[0099]

[0100] It reduces measurement errors caused by repeatedly measuring the inner and outer diameters of the light-transmitting areas 251, 252, 253, and 254, and simplifies the calculation process.

[0101] In summary, the optoelectronic chip testing device and method provided by the embodiments of the present invention include a code disk 25 disposed between the test chip 21 and the light source 24 to adjust the area of ​​the photosensitive area 212 of the test chip 21 illuminated by the light from the light source 24; by changing the area of ​​the light from the light source 24 illuminating the photosensitive area 212, the light energy of the light illuminating the photosensitive area 212 is changed, avoiding the influence of the nonlinearity between current and light intensity on the test results when the light intensity of the light source 24 is changed by changing the current of the light source 24, thereby improving the accuracy of the test results.

[0102] Furthermore, in this embodiment of the invention, multiple light-transmitting areas 251, 252, 253, and 254 with different radial widths are provided to increase the dynamic range of light energy irradiating the photosensitive area 212; the photoelectric sensitivity within different dynamic ranges is tested to further improve the accuracy of the test results.

[0103] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A testing device for an optoelectronic chip, characterized in that, include: The test socket is used to fix the test chip. A probe is disposed in the test socket and is correspondingly positioned to and electrically connected to the PAD disk of the test chip. A light source is used to provide light to the test chip and is positioned directly opposite the photosensitive area of ​​the test chip. A code disk is used to adjust the area of ​​the photosensitive area of ​​the test chip illuminated by the light from the light source. The code disk is disposed between the test chip and the light source. The code disk has at least one light-transmitting area, through which the light from the light source illuminates the photosensitive area when the code disk rotates. The testing method includes the following steps: installing the test chip, probe, test socket, code disk, and light source; connecting the probe to an oscilloscope, turning on the light source, starting the driver, and rotating the code disk; acquiring the photocurrent curve using the oscilloscope and calculating the photoelectric sensitivity; the light-transmitting area is fan-shaped, and the ring containing the light-transmitting area has the same central axis as the code disk. The radial centerline of the light-transmitting area and the center point of the photosensitive area lie on the same arc; the test method further includes: the photocurrent is calculated using the following formula: in, Photocurrent, The light intensity of the light source is... The area of ​​the photosensitive area illuminated by light. For photoelectric sensitivity; the area of ​​the photosensitive area illuminated by light during the process from when the photosensitive area begins to enter the light-transmitting area until the entire photosensitive area begins to enter the light-transmitting area is calculated using the following formula: in, The area of ​​the photosensitive area illuminated by light; The outer diameter of the light-transmitting area is [missing information]. The inner diameter of the light-transmitting area is [missing information]. The radial irradiation width of the photosensitive area. The angular velocity of the encoder disk rotation. The time elapsed from when the photosensitive area begins to enter the light-transmitting area; during the period from when the photosensitive area begins to enter the light-transmitting area until the entire photosensitive area begins to enter the light-transmitting area, the photoelectric sensitivity is calculated using the following formula: in, For photoelectric sensitivity, Photocurrent, The light intensity of the light source is... The outer diameter of the light-transmitting area is [missing information]. The inner diameter of the light-transmitting area is [missing information]. The radial irradiation width of the photosensitive area. The angular velocity of the encoder disk rotation. The time elapsed since the photosensitive area began to enter the light-transmitting area.

2. The testing apparatus for optoelectronic chips according to claim 1, characterized in that, The code disk is arranged parallel to the test chip. The code disk is circular, and the photosensitive area is rectangular. The radius of the code disk is greater than the length of the photosensitive area. The projection of the code disk onto the test chip completely covers the photosensitive area. The photosensitive area is located on one side of the central axis of the code disk and is arranged radially.

3. The testing apparatus for optoelectronic chips according to claim 1, characterized in that, The light-transmitting area is fan-shaped, and the ring containing the light-transmitting area has the same central axis as the code disk; the radial center line of the light-transmitting area and the center point of the photosensitive area are on the same arc.

4. The testing apparatus for optoelectronic chips according to claim 3, characterized in that, The light-transmitting area consists of four zones, namely, a light-transmitting area A, a light-transmitting area B, a light-transmitting area C, and a light-transmitting area D, which are equally spaced. Each of the light-transmitting areas A, B, C, and D has the same central angle. The radial width of each of the light-transmitting areas A, B, C, and D decreases sequentially.

5. The testing apparatus for optoelectronic chips according to claim 1, characterized in that, It also includes a driving component, wherein a rotating hole is provided at the center of the code disk, and the rotating shaft of the driving component is disposed in the rotating hole to drive the code disk to rotate.

6. The testing apparatus for optoelectronic chips according to claim 1, characterized in that, It also includes an oscilloscope, to which the probe is connected to measure and display the photocurrent.

7. A testing method for an optoelectronic chip, characterized in that, The testing apparatus as described in any one of claims 1-6 includes the following steps: the test base is inverted U-shape, the code disk is circular, the photosensitive area is rectangular, the radius of the code disk is greater than the length of the photosensitive area, and the testing method further includes: embedding one side of the test chip with the PAD disk into the test base; inserting the probe into the top of the test base corresponding to the PAD disk and electrically connecting the probe to the PAD disk; fixing the test base; placing the code disk below the test chip and parallel to the test chip, the projection of the code disk on the test chip completely covering the photosensitive area, such that the photosensitive area is located on one side of the central axis of the code disk and arranged radially; and placing the light source below the code disk and directly facing the photosensitive area.

8. The testing method for an optoelectronic chip according to claim 7, characterized in that, The light-transmitting area comprises four regions: a light-transmitting area A, a light-transmitting area B, a light-transmitting area C, and a light-transmitting area D, which are equally spaced. Each of these regions has the same central angle. The radial widths of the light-transmitting areas A, B, C, and D decrease sequentially. The testing method further includes calculating the corresponding photoelectric sensitivity for each of the light-transmitting areas A, B, C, and D.

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