An efficient rectification device for hydrofluoric acid at semiconductor and electronic grades

Abstract

The present invention discloses an efficient rectification device for hydrofluoric acid at the semiconductor grade and electronic grade, which relates to the technical field of hydrofluoric acid preparation. The device includes a tower body, and further includes a lifting plate disposed at the top of the inner cavity of the tower body; a lifting mechanism disposed between the lifting plate and the tower body for driving the lifting plate to move up and down in the tower body; and a rotating ring disposed at the bottom of the lifting plate. In the present invention, the lifting mechanism and the rotating mechanism drive an industrial camera and a thickness gauge to move in a spiral line on the inner wall of the tower body to detect the inner wall of the tower body after each preparation. If it is found during the detection that the purity of the hydrofluoric acid at the semiconductor grade and electronic grade prepared is unqualified, a targeted impurity detection is carried out on the material of the inner wall of the tower body, and it is not necessary to extract and then analyze the impurities first, so that the problem that the purity of the hydrofluoric acid at the semiconductor grade and electronic grade prepared is unqualified due to the corrosion of the inner wall of the tower body can be discovered in time.

Description

Technical Field

[0001] The present invention relates to the technical field of hydrofluoric acid preparation, and particularly relates to a high-efficiency rectification device for semiconductor-grade and electronic-grade hydrofluoric acid. Background Art

[0002] Rectification is a commonly used physical separation technology, widely applied in fields such as chemical industry, pharmaceuticals, petroleum, and food, for separating different volatile components in liquid mixtures. It achieves separation by utilizing the boiling point differences of different substances, heating the mixture to vaporize it, and then condensing the vapor back into liquid.

[0003] The basic principle of rectification is to achieve separation based on the boiling point differences of different components by using heating and cooling. During the rectification process, the mixture is first heated to convert the volatile components into vapor, and then cooled to turn the vapor back into liquid, thereby separating different components.

[0004] Semiconductor-grade and electronic-grade hydrofluoric acid are high-purity hydrofluoric acids used in the semiconductor and electronics industries, with relatively high quality requirements, and their uses and application fields are somewhat different;

[0005] Semiconductor-grade hydrofluoric acid is a high-purity hydrofluoric acid used in the semiconductor manufacturing process. During semiconductor manufacturing, hydrofluoric acid is commonly used in process steps such as etching, cleaning, and removing surface impurities. The purity requirements for hydrofluoric acid are extremely high, usually reaching the ppb (one in a billion) or even ppq (one in a trillion) level of purity to ensure the quality and performance of semiconductor products;

[0006] Electronic-grade hydrofluoric acid is a high-purity hydrofluoric acid used in the manufacturing process of the electronics industry. The electronics industry includes fields such as integrated circuits, optoelectronic devices, and liquid crystal displays. The purity requirements for hydrofluoric acid are also very high, usually reaching the ppb (one in a billion) or higher level of purity to meet the requirements of high-purity chemicals for electronic products.

[0007] Semiconductor-grade and electronic-grade hydrofluoric acid usually requires strict production processes and quality control, including using high-purity raw materials, adopting special production equipment and processes, and conducting strict quality inspections and controls to ensure that it meets the specific needs of the semiconductor and electronics industries and does not introduce any undesirable impurities during the manufacturing process. Such high-purity hydrofluoric acid plays an important role in ensuring the performance and reliability of semiconductor and electronic products.

[0008] The prior art has the following deficiencies: The corrosion of the inner wall of the rectification column will have a serious impact on the preparation of semiconductor-grade and electronic-grade hydrofluoric acid. Since semiconductor-grade and electronic-grade hydrofluoric acid has a very low tolerance for impurities, even a small amount of impurities will have a negative impact on the performance of semiconductor devices. Therefore, the corrosion of the inner wall of the rectification column will lead to impurity contamination, reduce the purity and quality of the product, and thus affect the performance of semiconductor devices. In the actual preparation of semiconductor-grade and electronic-grade hydrofluoric acid, the prior art cannot detect the corrosion of the inner wall of the rectification column in time. When it is found that the purity of the prepared semiconductor-grade and electronic-grade hydrofluoric acid is unqualified, it is only after extracting and analyzing the impurities that it can be found that the inner wall of the rectification column is corroded, and the efficiency of problem discovery is low, which will seriously hinder the efficient preparation of semiconductor-grade and electronic-grade hydrofluoric acid.

[0009] The above information disclosed in the background art section is only used to enhance the understanding of the background of the present disclosure, and thus it may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0010] The purpose of the present invention is to provide a high-efficiency rectification device for semiconductor-grade and electronic-grade hydrofluoric acid, through which, to solve the problems in the above background art.

[0011] To achieve the above purpose, the present invention provides the following technical solution: A high-efficiency rectification device for semiconductor-grade and electronic-grade hydrofluoric acid, including a tower body, and further including

[0012] A lifting plate, arranged at the top of the inner cavity of the tower body;

[0013] A lifting mechanism, arranged between the lifting plate and the tower body, for driving the lifting plate to move up and down in the tower body;

[0014] A rotating ring, arranged at the bottom of the lifting plate;

[0015] An industrial camera and a thickness gauge, installed on one side of the rotating ring close to the inner wall of the tower body;

[0016] A rotating mechanism, for driving the rotating ring to rotate, so that the industrial camera and the thickness gauge move in a spiral line with the rotation of the rotating ring and the lifting of the lifting plate. The industrial camera rotates to obtain the change information of the corrosion area on the inner wall of the tower body, transmits the information to the thickness gauge, and measures the depth change information of the corrosion area through the thickness gauge;

[0017] The central processing unit obtains the change information of the corrosion area on the inner wall of the tower and the depth change information of the corrosion area, obtains the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, and the increment of the maximum opening area of the corrosion areas through the change information of the corrosion areas, obtains the increment of the average depth of the corrosion areas and the increment of the maximum depth of the corrosion areas through the depth change information of the corrosion areas. After obtaining, a data analysis model is established to generate an influence coefficient, and the inner wall of the tower is monitored through the influence coefficient.

[0018] Preferably, the lifting mechanism includes a first motor installed at the top of the tower, a lead screw threadedly connected to both sides of the lifting plate, and a transmission mechanism connected between the output shaft of the first motor and the lead screw;

[0019] The transmission mechanism includes a sprocket connected to the outside of the output shaft of the first motor and the top of the lead screw, and a chain connected between the sprockets.

[0020] Preferably, a feed inlet and a solenoid valve are provided at the top of the tower. The solenoid valve is arranged inside the feed inlet. A packing layer is provided at the top of the tower. An electric heating coil is arranged at the bottom of the inner cavity of the tower. A reminder is arranged outside the tower. A condenser tube penetrates through one side of the top of the tower.

[0021] Preferably, the end of the output shaft of the first motor is drivingly connected to a stirring shaft, and a plurality of stirring blades are uniformly arranged on the outside of the stirring shaft from top to bottom.

[0022] Preferably, after obtaining the change information of the corrosion area on the inner wall of the tower and the depth change information of the corrosion area, the change information of the corrosion area on the inner wall of the tower and the depth change information of the corrosion area are transmitted to the central processing unit through an industrial camera and a thickness gauge, and the central processing unit further processes the change information of the corrosion area and the depth change information of the corrosion area. The further processing process is as follows:

[0023] The inner wall of the tower is divided into n identical areas, and the divided areas are labeled as M1. The change information of the corrosion area and the depth change information of the corrosion area after running for T time in M1 are obtained. The increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, and the increment of the maximum opening area of the corrosion areas are obtained through the change information of the corrosion areas. The increment of the average depth of the corrosion areas and the increment of the maximum depth of the corrosion areas are obtained through the depth change information of the corrosion areas. After obtaining, the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas are respectively labeled as SLi, PJMi, ZDMi, PJSi, and ZDSi. Then, a data analysis model is established through the central processing unit to generate an influence coefficient. The formula is as follows:

[0024]

[0025] In the formula, PGZ is the influence coefficient, and α, β, γ, δ, and θ are the preset proportionality coefficients of the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas, respectively, and α, β, γ, δ, and θ are all greater than or equal to 0.

[0026] Preferably, after the hydrofluoric acid at the semiconductor grade and the electronic grade is prepared, the influence coefficient PGZ of the inner wall of the tower is compared with the threshold value SS1. If the influence coefficient PGZ of the inner wall of the tower is greater than the threshold value SS1, the central processing unit will send a signal to the reminder, and an early warning reminder will be issued through the reminder to prompt the staff that the inner wall of the tower is severely corroded. If the influence coefficient PGZ of the inner wall of the tower is less than or equal to the threshold value SS1, the central processing unit will send a signal to the reminder, and no early warning reminder will be issued through the reminder.

[0027] Preferably, the information of the corrosion areas and the depth information of the corrosion areas in the inner wall area M1 of the tower are obtained through the central processing unit. The number of corrosion areas, the average opening area of the corrosion areas, and the maximum opening area of the corrosion areas are obtained through the information of the corrosion areas. The average depth and the maximum depth of the corrosion areas are obtained through the depth information of the corrosion areas. After obtaining, the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas are respectively calibrated as SLi′, PJMi′, ZDMi′, PJSi′, and ZDSi′, a data analysis model is established, an evaluation coefficient is generated, and the corrosion condition of the inner wall of the tower is evaluated through the evaluation coefficient. The formula is as follows:

[0028]

[0029] In the formula, PJXi is the evaluation coefficient, and a1, a2, a3, a4, and a5 are the preset proportionality coefficients of the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas, respectively, and a1, a2, a3, a4, and a5 are all greater than 0.

[0030] Preferably, the evaluation coefficient PJXi generated from the corrosion condition of the inner wall of the tower is compared with the threshold value SS2. If the evaluation coefficient PJXi of the inner wall of the tower is greater than the threshold value SS2, the central processor will send a signal to the reminder, issue a warning reminder through the reminder, generate a scanned spiral line through the central processor and display it on the display screen of the central processor, determine the actual position of the area M1 where the reminder is issued on the inner wall of the tower through the formed spiral line and display it. If the evaluation coefficient PJXi of the inner wall of the tower is less than or equal to the threshold value SS2, indicating that the area M1 is not severely corroded, the central processor will send a signal to the reminder and will not issue a warning reminder through the reminder.

[0031] In the above technical solution, the technical effects and advantages provided by the present invention are as follows:

[0032] 1. The present invention drives the industrial camera and the thickness gauge to move in a spiral line on the inner wall of the tower through the lifting mechanism and the rotating mechanism, and detects the inner wall of the tower after each preparation is completed. By establishing a data analysis model for the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas, an influence coefficient is generated, and the influence coefficient is compared with the threshold value to detect the corrosion condition of the inner wall of the tower. When the influence coefficient of the inner wall of the tower is greater than the threshold value, a warning reminder is issued through the reminder to prompt the staff that the inner wall of the tower is severely corroded. If it is found during the detection that the purity of the semiconductor-grade and electronic-grade hydrofluoric acid prepared is unqualified, a targeted impurity detection is carried out on the material of the inner wall of the tower. Without the need to extract and analyze the impurities first, the problem that the purity of the semiconductor-grade and electronic-grade hydrofluoric acid prepared is unqualified due to the corrosion of the inner wall of the tower can be discovered in time.

[0033] 2. The present invention detects the inner wall of the tower after each preparation. By establishing a data analysis model based on the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas, an evaluation coefficient is generated. The evaluation coefficient generated from the corrosion condition of the inner wall of the tower is compared with a threshold value. If the evaluation coefficient of the inner wall of the tower is greater than the threshold value, the central processor sends a signal to the prompt device, and a warning prompt is issued through the prompt device to notify the staff that the inner wall of the tower is severely corroded. When the prompt person receives the signal of severe corrosion of the inner wall of the tower, a scanned spiral line is generated by the central processor and displayed on the display screen of the central processor. The actual position of the area M1 where the prompt is issued on the inner wall of the tower is determined and displayed through the scanned spiral line, so as to facilitate the staff to promptly repair the severely corroded area, effectively prevent the tower body from leaking or bursting due to severe corrosion of the inner wall of the tower, improve the safety of the preparation process of semiconductor-grade and electronic-grade hydrofluoric acid. Secondly, the severely corroded area can be accurately discovered and located for precise repair, improving the repair efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments recorded in the present invention, and those of ordinary skill in the art can also obtain other drawings based on these drawings.

[0035] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0036] Figure 2 For the present invention Figure 1 Enlarged view of part A.

[0037] Figure 3 It is a top view of the transmission mechanism of the present invention.

[0038] Figure 4 It is a top view of the driving gear, internal gear ring, and rotating ring of the present invention.

[0039] Figure 5 It is a schematic diagram of the circuit module of the present invention.

[0040] Figure 6 It is a usage scenario diagram of the present invention.

[0041] Figure 7 It is a schematic diagram of the spiral scanning of the industrial camera and thickness gauge of the present invention.

[0042] Description of the reference numerals:

[0043] 1. Tower body; 2. Lifting plate; 3. Lifting mechanism; 31. First motor; 32. Lead screw; 33. Transmission mechanism; 331. Sprocket; 332. Chain; 4. Rotating ring; 5. Industrial camera; 6. Thickness gauge; 7. Rotating mechanism; 71. Second motor; 72. Driving gear; 73. Internal gear ring; 8. Central processing unit; 9. Stirring shaft; 10. Stirring blade; 11. Condensing pipe; 12. Packing layer; 13. Electric heating coil; 14. Prompting member. Detailed implementation mode

[0044] Example embodiments will now be described more fully with reference to the accompanying drawings.

[0045] Embodiment 1

[0046] The present invention provides a highly efficient rectification device for hydrofluoric acid at the semiconductor grade and electronic grade as shown in Figures 1 to 7 the drawings, which includes a tower body 1, and further includes a lifting plate 2 disposed at the top of the inner cavity of the tower body 1; a lifting mechanism 3 disposed between the lifting plate 2 and the tower body 1 for driving the lifting plate 2 to move up and down in the tower body 1; a rotating ring 4 disposed at the bottom of the lifting plate 2; an industrial camera 5 and a thickness gauge 6 installed on one side of the rotating ring 4 close to the inner wall of the tower body 1; a rotating mechanism 7 for driving the rotating ring 4 to rotate, so that the industrial camera 5 and the thickness gauge 6 perform spiral movement along with the rotation of the rotating ring 4 and the lifting of the lifting plate 2, and the industrial camera 5 rotates to obtain the change information of the corrosion area on the inner wall of the tower body 1, and transmits the information to the thickness gauge 6, and the thickness gauge 6 measures the depth change information of the corrosion area;

[0047] The lifting mechanism 3 includes a first motor 31 installed at the top of the tower body 1, a lead screw 32 threadedly connected to both sides of the lifting plate 2, and a transmission mechanism 33 connected between the output shaft of the first motor 31 and the lead screw 32; the transmission mechanism 33 includes a sprocket 331 connected to the outside of the output shaft of the first motor 31 and the top of the lead screw 32, and a chain 332 connected between the sprockets 331;

[0048] The rotating mechanism 7 includes a second motor 71 connected to one side of the top of the lifting plate 2, a driving gear 72 connected to the end of the output shaft of the second motor 71, and an internal gear ring 73 connected to the inside of the rotating ring 4, and the driving gear 72 meshes with the internal gear ring 73;

[0049] A feed inlet and a solenoid valve are provided at the top of the tower body 1, the solenoid valve is disposed inside the feed inlet, a packing layer 12 is provided at the top of the tower body 1, an electric heating coil 13 is disposed at the bottom of the inner cavity of the tower body 1, a prompting member 14 is provided outside the tower body 1, and a condensing pipe 11 penetrates through one side of the top of the tower body 1;

[0050] The end of the output shaft of the first motor 31 is drivingly connected to a stirring shaft 9, and a plurality of stirring blades 10 are uniformly arranged on the outside of the stirring shaft 9 from top to bottom;

[0051] Specific implementation method: During actual use, open the solenoid valve at the top feed inlet of the tower body 1, and add the raw materials for preparing semiconductor-grade and electronic-grade hydrofluoric acid through the feed inlet. When the feeding is completed, close the feed inlet, connect the electric heating coil 13 at the bottom of the tower body 1, and heat the bottom of the tower body 1 through the electric heating coil 13, so that steam flows out from the condenser tube 11. Condense the steam through the condenser tube 11, and collect the semiconductor-grade and electronic-grade hydrofluoric acid, thereby realizing the preparation of semiconductor-grade and electronic-grade hydrofluoric acid. A packing layer 12 is provided at the top of the tower body 1. The packing layer 12 is composed of ultra-pure PFA, injection molding, or ultra-pure PFA plates filled and pressed into a mesh-like and small-hole-containing packing to form a regular packing. Compared with the ultra-pure PFA Pall rings in the prior art, it does not require multi-stage rectification to achieve the effect, can greatly increase the specific surface area, and thus improve the separation efficiency. After the preparation is completed, the central processor 8 controls the synchronous operation of the first motor 31 and the second motor 71. Under the action of the chain 332, the first motor 31 drives the two side lead screws 32 to rotate synchronously, and the rotating lead screws 32 drive the lifting plate 2 to move up and down in a screw drive manner. When the first motor 31 operates, it can drive the stirring shaft 9 and the stirring blades 10 to rotate. Through the rotating stirring blades 10, the raw materials for preparing semiconductor-grade and electronic-grade hydrofluoric acid can be agitated, so that the raw materials for semiconductor-grade and electronic-grade hydrofluoric acid are evenly heated, and the evaporation effect of the raw materials for preparing semiconductor-grade and electronic-grade hydrofluoric acid is improved. When the second motor 71 operates, it drives the driving gear 72 to rotate. Since the driving gear 72 meshes with the internal gear ring 73, the rotating ring 4 can be driven through the driving gear 72, and the industrial camera 5 and the thickness gauge 6 are driven to rotate through the rotating ring 4. Thus, the industrial camera 5 and the thickness gauge 6 can rotate and move up and down at the same time, so that the industrial camera 5 and the thickness gauge 6 move in a spiral line inside the tower body 1. The industrial camera 5 rotates to obtain the change information of the corrosion area on the inner wall of the tower body 1. When the industrial camera 5 obtains the information that there is corrosion on the inner wall of the tower body 1, the information is transmitted to the thickness gauge 6, and the thickness gauge 6 measures the depth change information of the corrosion area, thereby realizing the detection of the inner wall of the tower body 1 after the preparation is completed and timely understanding the situation of the inner wall of the tower body 1;

[0052] The industrial camera 5 can measure the opening area of the corrosion area by taking images of the inner wall of the distillation column and using image processing algorithms. The specific steps are as follows:

[0053] A. Use the industrial camera 5 to take images of the inner wall of the distillation column;

[0054] B. Preprocess the image, including operations such as denoising and enhancing contrast, to improve the accuracy of subsequent analysis;

[0055] C. Use image processing algorithms to segment the corrosion area and separate the corrosion area from the entire image;

[0056] D. Perform morphological processing on the isolated corrosion areas, such as dilation and erosion operations, to fill in discontinuous areas and smooth the edges;

[0057] E. Calculate the opening area of the corrosion areas by methods such as the contour area method and edge detection algorithms;

[0058] The thickness gauge 6 is an instrument used to measure the thickness of materials and is used to measure the corrosion depth of the inner wall of the hydrofluoric acid rectification device. The thickness gauge 6 usually uses technologies such as ultrasonic waves or rays to calculate the corrosion depth by measuring the propagation time from the surface to the bottom or the attenuation degree of the transmitted rays;

[0059] The central processing unit 8 obtains the change information of the corrosion areas on the inner wall of the tower body 1 and the depth change information of the corrosion areas. From the change information of the corrosion areas, it obtains the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, and the increment of the maximum opening area of the corrosion areas. From the depth change information of the corrosion areas, it obtains the increment of the average depth of the corrosion areas and the increment of the maximum depth of the corrosion areas. After obtaining them, it establishes a data analysis model, generates influence coefficients, and monitors the inner wall of the tower body 1 through the influence coefficients;

[0060] Specific implementation method: After obtaining the change information of the corrosion areas on the inner wall of the tower body 1 and the depth change information of the corrosion areas, the industrial camera 5 and the thickness gauge 6 transmit the change information of the corrosion areas on the inner wall of the tower body 1 and the depth change information of the corrosion areas to the central processing unit 8. The central processing unit 8 further processes the change information of the corrosion areas and the depth change information of the corrosion areas. The further processing process is as follows:

[0061] Divide the inner wall of the tower body 1 into n identical areas, label the divided areas as M1, obtain the change information of the corrosion areas and the depth change information of the corrosion areas within M1 after running for T time. From the change information of the corrosion areas, obtain the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, and the increment of the maximum opening area of the corrosion areas. From the depth change information of the corrosion areas, obtain the increment of the average depth of the corrosion areas and the increment of the maximum depth of the corrosion areas. After obtaining them, label the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas as SLi, PJMi, ZDMi, PJSi, and ZDSi respectively. Then, through the central processing unit 8, establish a data analysis model and generate influence coefficients. The formula is as follows:

[0062]

[0063] In the formula, PGZ is the influence coefficient, and α, β, γ, δ, and θ are the preset proportionality coefficients of the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas, respectively, and α, β, γ, δ, and θ are all greater than or equal to 0;

[0064] It can be seen from the formula that the more the increment of the number of corrosion areas on the inner wall of the tower body 1, the larger the increment of the average opening area of the corrosion areas, the larger the increment of the maximum opening area of the corrosion areas, the larger the increment of the average depth of the corrosion areas, and the larger the increment of the maximum depth of the corrosion areas. That is, the larger the value of the influence coefficient PGZ, the more serious the corrosion of the area M1, and vice versa, it indicates that the corrosion of the area M1 is less serious;

[0065] After the semiconductor-grade and electronic-grade hydrofluoric acid are prepared, the influence coefficient PGZ of the inner wall of the tower body 1 is compared with the threshold value SS1. If the influence coefficient PGZ of the inner wall of the tower body 1 is greater than the threshold value SS1, indicating that the area M1 is severely corroded, the central processing unit 8 will send a signal to the prompt 14, and an early warning prompt will be issued through the prompt 14 to prompt the staff that the inner wall of the tower body 1 is severely corroded. When the prompt personnel receive the signal that the inner wall of the tower body 1 is severely corroded, if it is found during the detection that the purity of the prepared semiconductor-grade and electronic-grade hydrofluoric acid is unqualified, a targeted impurity detection is carried out on the material of the inner wall of the tower body 1. Without the need to extract and analyze the impurities first, the problem that the purity of the semiconductor-grade and electronic-grade hydrofluoric acid prepared due to the corrosion of the inner wall of the tower body 1 can be found in time. If the influence coefficient PGZ of the inner wall of the tower body 1 is less than or equal to the threshold value SS1, indicating that the area M1 is not severely corroded, the central processing unit 8 will send a signal to the prompt 14, and no early warning prompt will be issued through the prompt 14;

[0066] In the present invention, the lifting mechanism 3 and the rotating mechanism 7 are used to drive the industrial camera 5 and the thickness gauge 6 to move in a spiral line on the inner wall of the tower body 1, and the inner wall of the tower body 1 after each preparation is detected. By establishing a data analysis model for the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas, an influence coefficient is generated. The influence coefficient is compared with the threshold value to detect the corrosion condition of the inner wall of the tower body 1. When the influence coefficient of the inner wall of the tower body 1 is greater than the threshold value, an early warning prompt is issued through the prompt 14 to prompt the staff that the inner wall of the tower body 1 is severely corroded. If it is found during the detection that the purity of the prepared semiconductor-grade and electronic-grade hydrofluoric acid is unqualified, a targeted impurity detection is carried out on the material of the inner wall of the tower body 1. Without the need to extract and analyze the impurities first, the problem that the purity of the semiconductor-grade and electronic-grade hydrofluoric acid prepared due to the corrosion of the inner wall of the tower body 1 can be found in time;

[0067] Embodiment 2

[0068] In the actual preparation of semiconductor-grade and electronic-grade hydrofluoric acid, the area M1 is detected each time the preparation is completed. Information on the corrosion area and the depth information of the corrosion area in the inner wall area M1 of the tower body 1 are obtained through the central processor 8. The number of corrosion areas, the average opening area of the corrosion areas, and the maximum opening area of the corrosion areas are obtained from the information on the corrosion areas. The average depth and the maximum depth of the corrosion areas are obtained from the depth information of the corrosion areas. After obtaining them, the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas are respectively designated as SLi′, PJMi′, ZDMi′, PJSi′, and ZDSi′. A data analysis model is established to generate an evaluation coefficient, and the corrosion condition of the inner wall of the tower body 1 is evaluated through the evaluation coefficient. The basis formula is:

[0069]

[0070] In the formula, PJXi is the evaluation coefficient, and a1, a2, a3, a4, and a5 are respectively the preset proportionality coefficients of the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas, and a1, a2, a3, a4, and a5 are all greater than 0;

[0071] It can be seen from the formula that the more the number of corrosion areas on the inner wall of the tower body 1, the larger the average opening area of the corrosion areas, the larger the maximum opening area of the corrosion areas, the larger the average depth of the corrosion areas, and the larger the maximum depth of the corrosion areas, that is, the larger the performance value of the evaluation coefficient PJXi, indicating that the area M1 is more severely corroded. On the contrary, it indicates that the area M1 is less severely corroded;

[0072] The evaluation coefficient PJXi generated from the corrosion condition of the inner wall of the tower body 1 is compared with the threshold value SS2. If the evaluation coefficient PJXi of the inner wall of the tower body 1 is greater than the threshold value SS2, indicating that the area M1 is severely corroded, the central processor 8 will send a signal to the prompt 14, and an early warning prompt will be issued through the prompt 14 to prompt the staff that the inner wall of the tower body 1 is severely corroded. The spiral line generated by scanning through the central processor 8 is displayed on the display screen of the central processor 8. The actual position of the area M1 where the prompt is issued on the inner wall of the tower body 1 is determined through the scanned spiral line and displayed, so as to facilitate the staff to timely repair the severely corroded area, effectively prevent the tower body 1 from leaking or bursting due to severe corrosion of the inner wall of the tower body 1, and improve the safety of the preparation process of semiconductor-grade and electronic-grade hydrofluoric acid. If the evaluation coefficient PJXi of the inner wall of the tower body 1 is less than or equal to the threshold value SS2, indicating that the area M1 is not severely corroded, the central processor 8 will send a signal to the prompt 14, and no early warning prompt will be issued through the prompt 14;

[0073] After the inner wall of the tower body 1 is detected after each preparation, a data analysis model is established by using the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas to generate an evaluation coefficient. The evaluation coefficient generated from the corrosion condition of the inner wall of the tower body 1 is compared with a threshold value. If the evaluation coefficient of the inner wall of the tower body 1 is greater than the threshold value, the central processor 8 will send a signal to the reminder 14, and a warning reminder will be issued through the reminder 14 to prompt the staff that the inner wall of the tower body 1 is severely corroded. When the reminder receives the signal that the inner wall of the tower body 1 is severely corroded, a scanned spiral line is generated by the central processor 8 and displayed on the display screen of the central processor 8. The actual position of the area M1 where the reminder is issued is determined through the scanned spiral line and displayed, so as to facilitate the staff to timely repair the severely corroded area, effectively prevent the tower body 1 from leaking or bursting due to severe corrosion of the inner wall of the tower body 1, improve the safety of the preparation process of semiconductor-grade and electronic-grade hydrofluoric acid. Secondly, the position of the severely corroded area can be accurately found and located for precise repair, improving the repair efficiency.

[0074] The above formulas are all dimensionless and take their numerical values for calculation. The formulas are obtained by collecting a large amount of data and performing software simulation to obtain a formula closest to the actual situation. The preset parameters in the formulas are set by those skilled in the art according to the actual situation.

[0075] The above embodiments can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, the processes or functions described in the embodiments of the present application are generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center in a wired or wireless (such as infrared, wireless, microwave, etc.) manner. The computer-readable storage medium can be any available medium that the computer can access or a data storage device such as a server or data center that includes one or more collections of available media. The available media can be magnetic media (such as floppy disks, hard disks, magnetic tapes), optical media (such as DVDs), or semiconductor media. The semiconductor media can be a solid-state drive.

[0076] It should be understood that the term "and / or" in this text is merely a description of the association relationship between associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Here, A and B can be singular or plural. Additionally, in this text, the character " / " generally represents an "or" relationship between the associated objects before and after, but it may also represent an "and / or" relationship, and specific understanding can be referred to the context before and after.

[0077] In this application, "at least one" means one or more, and "a plurality" means two or more. "At least one of the following" or its similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b, or c can represent: a, b, c, a - b, a - c, b - c, or a - b - c, where a, b, and c can be single or multiple.

[0078] It should be understood that in various embodiments of this application, the magnitudes of the serial numbers of the above processes do not mean the sequence of execution. The execution sequence of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of this application.

[0079] Those of ordinary skill in the art can realize that the units and algorithm steps of each example described in combination with the embodiments disclosed in this text can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of this application.

[0080] In several embodiments provided in this application, it should be understood that the disclosed systems and methods can be implemented in other ways. For example, the above-described embodiments are merely illustrative. For example, the division of the units is only a logical function division, and there can be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed coupling or direct coupling or communication connection between each other can be an indirect coupling or communication connection through some interfaces, devices or units, and can be in an electrical, mechanical or other form.

[0081] The unit described as a separation component may or may not be physically separated. The component shown as a unit may or may not be a physical unit, that is, it may be located in one place or may be distributed over multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0082] In addition, each functional unit in various embodiments of the present application may be integrated in a processing unit, may exist separately as individual physical units, or two or more units may be integrated in one unit.

[0083] As described above, only the specific implementation manners of the present application are provided, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed in the present application can easily think of changes or substitutions, which should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An efficient rectification device for hydrofluoric acid at semiconductor grade and electronic grade, comprising a tower body (1), characterized in that: It also includes a lifting plate (2) arranged at the top inside the tower body (1); a lifting mechanism (3) arranged between the lifting plate (2) and the tower body (1) for driving the lifting plate (2) to move up and down inside the tower body (1); a rotating ring (4) arranged at the bottom of the lifting plate (2); an industrial camera (5) and a thickness gauge (6) installed on one side of the rotating ring (4) close to the inner wall of the tower body (1); a rotating mechanism (7) for driving the rotating ring (4) to rotate, so that the industrial camera (5) and the thickness gauge (6) perform spiral movement along with the rotation of the rotating ring (4) and the lifting of the lifting plate (2). The industrial camera (5) rotates to obtain the change information of the corrosion area on the inner wall of the tower body (1), transmits the information to the thickness gauge (6), and measures the depth change information of the corrosion area through the thickness gauge (6); a central processor (8) that obtains the change information of the corrosion area on the inner wall of the tower body (1) and the depth change information of the corrosion area, obtains the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, and the increment of the maximum opening area of the corrosion areas through the change information of the corrosion areas, obtains the increment of the average depth of the corrosion areas and the increment of the maximum depth of the corrosion areas through the depth change information of the corrosion areas. After obtaining, a data analysis model is established to generate an influence coefficient, and the inner wall of the tower body (1) is monitored through the influence coefficient; Among them, after obtaining the change information of the corrosion area on the inner wall of the tower body (1) and the depth change information of the corrosion area, the change information of the corrosion area on the inner wall of the tower body (1) and the depth change information of the corrosion area are transmitted to the central processor (8) through the industrial camera (5) and the thickness gauge (6). The central processor (8) further processes the change information of the corrosion area and the depth change information of the corrosion area. The further processing process is as follows: the inner wall of the tower body (1) is divided into n identical areas, and the divided areas are labeled as M1. The change information of the corrosion area and the depth change information of the corrosion area after operating for T time in M1 are obtained. The increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, and the increment of the maximum opening area of the corrosion areas are obtained through the change information of the corrosion areas. The increment of the average depth of the corrosion areas and the increment of the maximum depth of the corrosion areas are obtained through the depth change information of the corrosion areas. After obtaining, the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas are respectively labeled as SLi, PJMi, ZDMi, PJSi, and ZDSi. Then, a data analysis model is established through the central processor (8) to generate an influence coefficient. The formula is as follows: ； wherein, PGZ is the influence coefficient, , , , , are respectively the preset proportionality coefficients of the increment of the number of corrosion areas, the increment of the average opening area of the corrosion areas, the increment of the maximum opening area of the corrosion areas, the increment of the average depth of the corrosion areas, and the increment of the maximum depth of the corrosion areas, and , , , , are all greater than or equal to 0.

2. The high-efficiency rectification device for hydrofluoric acid at semiconductor grade and electronic grade according to claim 1, wherein: The lifting mechanism (3) includes a first motor (31) installed at the top of the tower body (1), lead screws (32) threadedly connected to both sides of the lifting plate (2), and a transmission mechanism (33) connected between the output shaft of the first motor (31) and the lead screws (32); The transmission mechanism (33) includes a sprocket (331) connected to the outside of the output shaft of the first motor (31) and the top of the lead screw (32), and a chain (332) connected between the sprockets (331).

3. The high-efficiency rectification device for hydrofluoric acid used in semiconductor grade and electronic grade according to claim 1, wherein: The rotating mechanism (7) includes a second motor (71) connected to one side of the top of the lifting plate (2), a driving gear (72) connected to the end of the output shaft of the second motor (71), and an internal gear ring (73) connected to the inside of the rotating ring (4). The driving gear (72) meshes with the internal gear ring (73).

4. The high-efficiency rectification device for hydrofluoric acid used in semiconductor grade and electronic grade according to claim 1, wherein: A feed inlet and a solenoid valve are provided at the top of the tower body (1). The solenoid valve is arranged inside the feed inlet. A packing layer (12) is provided at the top of the tower body (1). An electric heating coil (13) is arranged at the bottom of the inner cavity of the tower body (1). A reminder (14) is arranged outside the tower body (1). A condensing pipe (11) penetrates through one side of the top of the tower body (1).

5. An efficient rectification device for hydrofluoric acid at semiconductor grade and electronic grade according to claim 2, characterized in that: The end of the output shaft of the first motor (31) is drivingly connected to a stirring shaft (9). A plurality of stirring blades (10) are uniformly arranged on the outside of the stirring shaft (9) from top to bottom.

6. The highly efficient rectification device for hydrofluoric acid used in semiconductor grade and electronic grade according to claim 5, wherein: After the semiconductor-grade and electronic-grade hydrofluoric acid are prepared, the influence coefficient PGZ of the inner wall of the tower body (1) is compared with the threshold value SS1. If the influence coefficient PGZ of the inner wall of the tower body (1) is greater than the threshold value SS1, the central processor (8) sends a signal to the reminder (14) to issue a warning reminder through the reminder (14), prompting the staff that the inner wall of the tower body (1) is severely corroded. If the influence coefficient PGZ of the inner wall of the tower body (1) is less than or equal to the threshold value SS1, the central processor (8) sends a signal to the reminder (14) and does not issue a warning reminder through the reminder (14).

7. An efficient rectification device for hydrofluoric acid used in semiconductor grade and electronic grade, characterized in that: Obtain information on the corrosion area and the depth information of the corrosion area in the inner wall area M1 of the tower body (1) through the central processing unit (8). Obtain the number of corrosion areas, the average opening area of the corrosion areas, and the maximum opening area of the corrosion areas from the information on the corrosion areas. Obtain the average depth and the maximum depth of the corrosion areas from the depth information of the corrosion areas. After obtaining, label the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas as 、 、 、 、 respectively, establish a data analysis model, generate an evaluation coefficient, and evaluate the corrosion condition of the inner wall of the tower body (1) through the evaluation coefficient. The formula is as follows: ； In the formula, PJXi is the evaluation coefficient, are respectively the preset proportionality coefficients of the number of corrosion areas, the average opening area of the corrosion areas, the maximum opening area of the corrosion areas, the average depth of the corrosion areas, and the maximum depth of the corrosion areas, and are all greater than 0.

8. An efficient rectification device for hydrofluoric acid at semiconductor and electronic grades according to claim 7, characterized in that: The evaluation coefficient PJXi generated from the corrosion condition of the inner wall of the tower body (1) is compared with the threshold value SS2. If the evaluation coefficient PJXi of the inner wall of the tower body (1) is greater than the threshold value SS2, the central processor (8) sends a signal to the reminder (14) to issue a warning reminder through the reminder (14). The central processor (8) generates a scanned spiral line and displays it on the display screen of the central processor (8). The actual position of the area M1 where the reminder is issued on the inner wall of the tower body (1) is determined through the scanned spiral line and displayed. If the evaluation coefficient PJXi of the inner wall of the tower body (1) is less than or equal to the threshold value SS2, indicating that the area M1 is not severely corroded, the central processor (8) sends a signal to the reminder (14) and does not issue a warning reminder through the reminder (14).

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