Furnace tube apparatus and method of cleaning components thereof

Abstract

The present disclosure relates to a furnace tube device and a cleaning assembly and method thereof. The cleaning assembly of the furnace tube device comprises a cleaning pipe, a first pressure adjusting structure and a controller. The cleaning pipe is used to communicate with a reaction chamber of the furnace tube device to introduce a cleaning gas into the reaction chamber. The first pressure adjusting structure is connected with the cleaning pipe, and is used to adjust the gas pressure introduced into the reaction chamber by the cleaning pipe. The controller is electrically connected with the first pressure adjusting structure, and is used to control the first pressure adjusting structure to alternately and reciprocally operate at a first preset gas pressure and a second preset gas pressure. The first preset gas pressure is greater than the second preset gas pressure. In this way, when the first pressure adjusting structure alternately and reciprocally operates at the first preset gas pressure and the second preset gas pressure, a better cleaning effect of the furnace tube device can be achieved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor equipment technology, and in particular to a furnace tube device and its cleaning components and methods. Background Technology

[0002] Semiconductor manufacturing processes mainly involve multiple photolithography, etching, and film deposition processes to stack semiconductor devices with specific structures on a substrate surface. Among these, film deposition processes commonly employ thermal oxidation and chemical vapor deposition (CVD) to form various thin films. Thermal oxidation, primarily the furnace-tube thermal oxidation method, involves introducing reactive gases into a high-temperature furnace tube, causing a chemical reaction between the reactive gases and the semiconductor wafer within the furnace, depositing a thin film on the wafer surface. This process is used to grow Si3N4, SiO2, SiON, or polycrystalline silicon, and in recent years, it has also been used to grow metal layers, ferroelectric materials, barrier layers, high-dielectric-constant materials, and low-dielectric-constant materials.

[0003] The furnace tubes used in the thermal oxidation process generally come in various forms, including horizontal, vertical, and barrel-type. Taking a vertical deposition furnace tube as an example, multiple wafers are typically placed inside the furnace tube, and reactive gases such as SiH2Cl2 (also known as DCS gas), NH3, oxygen, and nitrogen are introduced to grow a dielectric film on the wafer surface at a high temperature. In this process, taking the reaction of DCS gas with NH3 to obtain a silicon nitride film as an example, white ammonium salt and other byproduct particles that easily condense will form on the inner wall of the tube and at the gas inlet.

[0004] With the market's enthusiasm for small and lightweight electronic products, semiconductor chips also need to be gradually reduced in size. This requires fewer and better quality by-product particles in the chip manufacturing process. In particular, some processes that produce a lot of by-product particles, such as furnace tube processes, if there are many by-product particles on the tube walls and gas pipelines and they cannot be cleaned well, they will enter the furnace tube along with the reaction gas in the next process and adhere to the substrate surface, thus affecting the quality of the thin film deposited on the substrate surface. Summary of the Invention

[0005] Therefore, it is necessary to overcome the shortcomings of the existing technology and provide a furnace tube device and its cleaning components and methods, which can effectively remove by-product particles and improve the quality of the film layer deposited on the substrate surface.

[0006] A cleaning assembly for a furnace tube device, the cleaning assembly comprising:

[0007] A cleaning pipeline is provided for connecting to the reaction chamber of the furnace tube equipment to introduce cleaning gas into the reaction chamber.

[0008] A first pressure adjustment structure, connected to the cleaning pipeline, is used to adjust the gas pressure supplied through the cleaning pipeline into the reaction chamber; and

[0009] The controller is electrically connected to the first pressure adjustment structure. The controller is used to control the first pressure adjustment structure to operate alternately according to a first preset air pressure and a second preset air pressure, wherein the first preset air pressure is greater than the second preset air pressure.

[0010] In one embodiment, the cleaning pipeline is used to communicate with a cleaning gas source, and the first pressure adjustment structure includes a first pressure adjustment valve and / or a first pressure pump connected to the cleaning pipeline; or, the first pressure adjustment structure includes a first gas storage container connected to the cleaning pipeline and a first pressure adjustment valve and / or a first pressure pump disposed on the first gas storage container, wherein the first gas storage container is used to store cleaning gas.

[0011] A furnace tube apparatus includes the aforementioned cleaning component, and further includes a tube shell forming a reaction chamber, a reaction gas pipeline extending through the tube shell into the interior of the reaction chamber, and a suction pump communicating with the reaction chamber; the cleaning pipeline is communicating with the reaction chamber, and the suction pump is electrically connected to the controller; at least one reaction gas pipeline is provided, and the reaction gas pipeline is also used to simultaneously introduce a protective gas while the cleaning gas from the cleaning pipeline is introduced into the interior of the reaction chamber. In one embodiment,

[0012] The furnace tube equipment also includes a second pressure adjustment structure for adjusting the pressure of the protective gas. The second pressure adjustment structure is connected to the reaction gas pipeline and is also electrically connected to the controller.

[0013] In one embodiment, the reaction gas pipeline includes a first reaction gas pipeline configured in a curved shape. The first reaction gas pipeline includes a vertical pipe section disposed inside the reaction chamber and a horizontal pipe section extending through the pipe shell into the reaction chamber. The vertical pipe section is connected to the horizontal pipe section. The vertical pipe section is provided with a plurality of first air holes arranged along its extension direction. Several first air holes near the docking position of the horizontal pipe section and the vertical pipe section are each configured as guide holes. The guide holes are used to guide clean gas to the docking position of the horizontal pipe section and the vertical pipe section.

[0014] In one embodiment, the guide hole includes an oblique hole disposed on the vertical pipe section, the central axis of the oblique hole being set at an acute angle to the central axis of the vertical pipe section; and / or, the guide hole includes an arc-shaped hole disposed on the wall of the vertical pipe section; and / or, the inner wall of the vertical pipe section is provided with a guide portion corresponding to and communicating with the guide hole, the guide portion including an arc-shaped segment and / or a straight segment set at an acute angle to the central axis of the vertical pipe section.

[0015] In one embodiment, the controller is further configured to simultaneously control the suction pump to operate at a first working power when controlling the first pressure adjustment structure to operate at a first preset air pressure; and to simultaneously control the suction pump to operate at a second working power when controlling the first pressure adjustment structure to operate at a second preset air pressure; wherein the second working power is greater than the first working power.

[0016] A method for cleaning the furnace tube equipment, the cleaning method comprising the following steps:

[0017] Cleaning gas is alternately introduced into the reaction chamber through a cleaning pipeline at a first preset pressure and a second preset pressure. Simultaneously, protective gas is introduced into the reaction gas pipeline from the input end, and the gas inside the reaction chamber is extracted outward by a suction pump.

[0018] In one embodiment,

[0019] The step of introducing protective gas from the input end of the reaction gas pipeline into the interior of the reaction gas pipeline includes: when cleaning gas is introduced into the interior of the reaction chamber at a first preset pressure, protective gas is introduced into the interior of the reaction gas pipeline from the input end of the reaction gas pipeline at a third preset pressure; when cleaning gas is introduced into the interior of the reaction chamber at a second preset pressure, protective gas is introduced into the interior of the reaction gas pipeline from the input end of the reaction gas pipeline at a fourth preset pressure; wherein, the third preset pressure is less than the fourth preset pressure;

[0020] And / or, the step of extracting the gas inside the reaction chamber outward by means of a suction pump includes the following steps: when clean gas is introduced into the reaction chamber at a first preset pressure, the suction pump is controlled to operate at a first working power; when clean gas is introduced into the reaction chamber at a second preset pressure, the suction pump is controlled to operate at a second working power; wherein, the second working power is greater than the first working power.

[0021] In one embodiment, the first preset pressure is 5 tor-10 tor, and the second preset pressure is 0 tor-6 tor.

[0022] In the aforementioned furnace tube equipment and its cleaning components and methods, when the reaction gas pipeline is configured in a curved shape, when the controller controls the first pressure adjustment structure to operate at a first preset gas pressure, that is, the cleaning gas of the cleaning pipeline is introduced into the reaction chamber at the first preset gas pressure, the pressure of the first preset gas pressure is high enough to allow the cleaning gas to enter the curved part of the reaction gas pipeline and clean the by-product particles at the curved part of the reaction gas pipeline; when the controller controls the first pressure adjustment structure to operate at a second preset gas pressure, that is, the cleaning gas of the cleaning pipeline is introduced into the reaction chamber at the second preset gas pressure, the pressure of the second preset gas pressure is relatively low, the cleaning gas does not reach the curved part of the reaction gas pipeline, and under the suction force of the suction pump of the furnace tube equipment, the by-product particles at the curved part of the reaction gas pipeline can be discharged. Similarly, for a linear reaction gas pipeline, the cleaning gas at the first preset pressure can enter the bottom of the pipeline to clean the byproduct particles at the bottom. When the cleaning gas at the second preset pressure is introduced into the linear reaction gas pipeline, the byproduct particles at the bottom of the pipeline are removed by the suction force of the furnace tube equipment's suction pump. Therefore, by alternating operation of the first pressure adjustment structure with the first and second preset pressures, a good cleaning effect on the furnace tube equipment can be achieved. Attached Figure Description

[0023] Figure 1 This is a structural diagram of a furnace tube device according to an embodiment of this application.

[0024] Figure 2 This is a graph showing the change in the pressure of the cleaning gas introduced into the cleaning pipeline of the cleaning component of the furnace tube equipment according to an embodiment of this application over time.

[0025] Figure 3 This is a schematic diagram showing the state in which protective gas and clean gas at a first preset pressure are introduced into the first reaction gas pipeline of a furnace tube device according to an embodiment of this application.

[0026] Figure 4 This is a schematic diagram showing the state in which protective gas and clean gas at a second preset pressure are introduced into the first reaction gas pipeline of a furnace tube device according to an embodiment of this application.

[0027] Figure 5 for Figure 4 The diagram shows a cross-sectional view of one embodiment of the structure at circle A.

[0028] Figure 6 for Figure 4 A cross-sectional view of another embodiment of the structure shown at circle A.

[0029] 10. Cleaning component; 11. Cleaning pipeline; 12. First pressure adjustment structure; 20. Pipe shell; 21. Reaction chamber; 30. Reaction gas pipeline; 31. First reaction gas pipeline; 311. Vertical pipe section; 312. Horizontal pipe section; 313. Bending section; 314. First vent; 315. Guide section; 32. Second reaction gas pipeline; 40. Suction pump; 50. Second pressure adjustment structure; P1. First preset gas pressure; P2. Second preset gas pressure; 60. Crystal boat; 70. Cleaning gas; 80. Protective gas. Detailed Implementation

[0030] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0031] It should be noted that the substrate in this embodiment can be a semiconductor wafer at any stage of the process of forming semiconductor elements, such as integrated circuits or discrete devices, on a substrate. In one embodiment, the substrate comprises a dielectric layer with an extremely low dielectric constant and a metal layer on the semiconductor substrate. The substrate can be a photomask, a semiconductor wafer, or other workpiece known to those skilled in the art of electronic component manufacturing. In at least some embodiments, the substrate comprises any material used to manufacture any integrated circuit, passive (e.g., capacitor, inductor), and active (e.g., transistor, photodetector, laser, diode) microelectronic components. The substrate may comprise an insulating material (e.g., a dielectric material) separating such active and passive microelectronic components from one or more conductive layers formed on top of them. In one embodiment, the substrate is a semiconductor substrate comprising one or more dielectric layers, such as silicon, gallium nitride, gallium arsenide, silicon dioxide, silicon nitride, sapphire, and other dielectric materials. In one embodiment, the substrate comprises a stack of wafers comprising one or more layers. A wafer with one or more layers may contain a conductive layer, a semiconductor layer, an insulating layer, or any combination of the foregoing.

[0032] As described in the background section, the manufacturing process of related technologies generates a significant amount of byproduct particles from gas pipelines. Although cleaning measures are implemented, such as introducing cleaning gas into the furnace tubes through cleaning pipelines and maintaining it at constant pressure for a certain period to clean the inner walls of the furnace tubes, as well as the DCS and NH3 pipelines, the process also involves simultaneously introducing N2 gas into the bottom of the DCS and NH3 pipelines during the cleaning process to minimize the impact of corrosive gases on downstream pipelines.

[0033] However, the inventors discovered that if the flow rate of N2 is too high during the cleaning process, and the bottom pores are small, the cleaning gas diffuses slowly and cannot diffuse to the bends in the reaction gas pipeline. This results in a small number of byproduct particles remaining in the bends of the DCS pipeline and at the bottom of the NH3 pipeline, meaning that the cleaning cannot be completely completed. When DCS gas is introduced into the subsequent process reaction, the byproduct particles in the bends will be blown out into the furnace tube, thus affecting the film forming quality on the substrate surface.

[0034] For the reasons mentioned above, this application provides a furnace tube device and its cleaning components and method, which can effectively remove by-product particles and improve the quality of the film deposited on the substrate surface.

[0035] It should be noted that the reaction gas pipeline in this embodiment includes, but is not limited to, DCS gas pipelines, ammonia pipelines, etc. Furthermore, the reaction gas pipeline may be configured in a curved or straight shape, for example. When the reaction gas pipeline is curved, byproduct particles generated during the process tend to accumulate at the curved portion of the pipeline; when the reaction gas pipeline is straight, byproduct particles generated during the process tend to accumulate at the bottom of the pipeline. In this embodiment, the DCS gas pipeline is configured in a curved shape, for example, and is defined as the first reaction gas pipeline; the ammonia pipeline is not selected to be curved, but is configured in a straight shape, for example, and is defined as the second reaction gas pipeline, but this is not a limitation.

[0036] See Figures 1 to 4 , Figure 1 A structural diagram of a furnace tube device according to an embodiment of this application is shown. Figure 2 The diagram shows the pressure of the cleaning gas 70 introduced into the cleaning pipeline 11 of the cleaning assembly 10 of the furnace tube equipment according to an embodiment of this application as a function of time. Figure 3 This diagram illustrates the state in which protective gas 80 and clean gas 70 at a first preset pressure P1 are introduced into the first reaction gas pipeline 31 of a furnace tube device according to an embodiment of this application. Figure 4This diagram illustrates the state of a protective gas 80 and a cleaning gas 70 at a second preset pressure P2 flowing through a first reaction gas pipeline 31 of a furnace tube apparatus according to an embodiment of this application. An embodiment of this application provides a cleaning assembly 10 for a furnace tube apparatus, comprising: a cleaning pipeline 11, a first pressure adjustment structure 12, and a controller (not shown). The cleaning pipeline 11 is connected to the reaction chamber 21 of the furnace tube apparatus to introduce the cleaning gas 70 into the reaction chamber 21. The first pressure adjustment structure 12 is connected to the cleaning pipeline 11 and is used to adjust the gas pressure flowing into the reaction chamber 21 from the cleaning pipeline 11. The controller is electrically connected to the first pressure adjustment structure 12 and is used to control the first pressure adjustment structure 12 to alternately operate according to a first preset pressure P1 and a second preset pressure P2, wherein the first preset pressure P1 is greater than the second preset pressure P2.

[0037] It should be noted that alternating reciprocating operation means, for example, that the first pressure adjustment structure 12 first operates according to the first preset air pressure P1, then operates according to the second preset air pressure P2, then operates according to the first preset air pressure P1, then operates according to the second preset air pressure P2, and so on in a cycle.

[0038] Furthermore, the specific values ​​of the first preset gas pressure P1 and the second preset gas pressure P2 can be flexibly adjusted and set according to the actual furnace tube equipment. As long as the clean gas 70 with the first preset gas pressure P1 is introduced into the furnace tube equipment, the clean gas 70 can enter the bend 313 of the reaction gas pipeline 30, and the clean gas 70 with the second preset gas pressure P2 is introduced into the furnace tube equipment, the clean gas 70 cannot enter the bend 313 of the reaction gas pipeline 30 because the gas pressure is not high enough. Specifically, the critical pressure at which the clean gas 70 can enter the bend 313 of the reaction gas pipeline 30 can be determined, for example, through extensive experimental research or by mathematical calculation based on a model. Based on the critical pressure, a first preset pressure P1 and a second preset pressure P2 are obtained. The first preset pressure P1 is, for example, set to 105% to 150% of the critical pressure, meaning that the first preset pressure P1 is greater than the critical pressure. This allows the clean gas 70 to enter the bend 313 of the reaction gas pipeline 30, while preventing the first preset pressure P1 from being too high and causing corrosion of the reaction gas pipeline. The input terminal of the reaction gas pipeline 30; the second preset gas pressure P2 is set, for example, to 50%-90% of the critical gas pressure. That is, if the second preset gas pressure P2 is less than the critical gas pressure, the cleaning gas 70 will not enter the bend 313 of the reaction gas pipeline 30. Under the suction force of the suction pump 40 of the furnace tube equipment, the by-product particles at the bend 313 of the reaction gas pipeline 30 will be discharged, thus achieving a cleaning effect. In addition, the first preset gas pressure P1 will not be too low, so that the cleaning gas 70 enters the reaction gas pipeline 30 to a sufficiently large depth, ensuring that the cleaning area of ​​the reaction gas pipeline 30 is not too small. It can be seen that by adopting a dynamic pressure control method, it is beneficial for the cleaning gas 70 to enter the depth of the reaction gas pipeline 30, achieving a better cleaning effect.

[0039] Regarding the aforementioned furnace tube equipment cleaning component 10, when the reaction gas pipeline 30 is configured in a curved shape, when the controller controls the first pressure adjustment structure 12 to operate at the first preset gas pressure P1, that is, the cleaning gas 70 of the cleaning pipeline 11 is introduced into the reaction chamber 21 at the first preset gas pressure P1. The pressure of the first preset gas pressure P1 is high enough to allow the cleaning gas 70 to enter the curved part 313 of the reaction gas pipeline 30 and clean the by-product particles at the curved part 313 of the reaction gas pipeline 30. When the controller controls the first pressure adjustment structure 12 to operate at the second preset gas pressure P2, that is, the cleaning gas 70 of the cleaning pipeline 11 is introduced into the reaction chamber 21 at the second preset gas pressure P2, the pressure of the second preset gas pressure P2 is relatively low, and the cleaning gas 70 does not reach the curved part 313 of the reaction gas pipeline 30. Under the suction force of the furnace tube equipment's suction pump 40, the by-product particles at the curved part 313 of the reaction gas pipeline 30 can be discharged. Similarly, for the reaction gas pipeline 30 to be arranged in a straight line, the cleaning gas 70 at the first preset pressure P1 can enter the bottom of the reaction gas pipeline 30 to clean the by-product particles at the bottom of the reaction gas pipeline 30; when the cleaning gas 70 at the second preset pressure P2 is introduced into the straight reaction gas pipeline 30, the by-product particles at the bottom of the reaction gas pipeline 30 can be discharged under the suction force of the suction pump 40 of the furnace tube equipment. It can be seen that when the first pressure adjustment structure 12 runs alternately according to the first preset pressure P1 and the second preset pressure P2, a good cleaning effect on the furnace tube equipment can be achieved.

[0040] In one embodiment, the cleaning line 11 is used to communicate with a source of cleaning gas 70. The first pressure regulating structure 12 includes a first pressure regulating valve and / or a first pressure pump connected to the cleaning line 11.

[0041] Of course, in another embodiment, the first pressure adjustment structure 12 includes a first gas storage container connected to the cleaning pipeline 11 and a first gas pressure adjustment valve and / or a first gas pressure pump disposed on the first gas storage container, the first gas storage container being used to store cleaning gas 70.

[0042] In some embodiments, the cleaning gas 70 includes, but is not limited to, fluorine-containing gases such as hydrogen fluoride and fluorine gas, which can effectively remove by-product particles accumulated on the pipe wall and in the gas channel, reducing the impact of by-product particles on the quality of products in the next process.

[0043] Please see Figure 1In one embodiment, a furnace tube device includes a cleaning component 10 as described in any of the above embodiments, a tube shell 20 forming a reaction chamber 21, a reaction gas pipeline 30 extending through the tube shell 20 into the interior of the reaction chamber 21, and a suction pump 40 communicating with the reaction chamber 21. The cleaning pipeline 11 is connected to the reaction chamber 21, and the suction pump 40 is electrically connected to a controller.

[0044] In the aforementioned furnace tube equipment, regarding the curved configuration of the reaction gas pipeline 30, when the controller controls the first pressure adjustment structure 12 to operate at the first preset pressure P1, that is, the cleaning gas 70 of the cleaning pipeline 11 is introduced into the reaction chamber 21 at the first preset pressure P1. The pressure of the first preset pressure P1 is high enough to allow the cleaning gas 70 to enter the curved portion 313 of the reaction gas pipeline 30 and clean the by-product particles at the curved portion 313 of the reaction gas pipeline 30. When the controller controls the first pressure adjustment structure 12 to operate at the second preset pressure P2, that is, the cleaning gas 70 of the cleaning pipeline 11 is introduced into the reaction chamber 21 at the second preset pressure P2, the pressure of the second preset pressure P2 is relatively low, and the cleaning gas 70 does not reach the curved portion 313 of the reaction gas pipeline 30. Under the suction force of the suction pump 40 of the furnace tube equipment, the by-product particles at the curved portion 313 of the reaction gas pipeline 30 can be discharged. Similarly, for the reaction gas pipeline 30 to be arranged in a straight line, the cleaning gas 70 at the first preset pressure P1 can enter the bottom of the reaction gas pipeline 30 to clean the by-product particles at the bottom of the reaction gas pipeline 30; when the cleaning gas 70 at the second preset pressure P2 is introduced into the straight reaction gas pipeline 30, the by-product particles at the bottom of the reaction gas pipeline 30 can be discharged under the suction force of the suction pump 40 of the furnace tube equipment. It can be seen that when the first pressure adjustment structure 12 runs alternately according to the first preset pressure P1 and the second preset pressure P2, a good cleaning effect on the furnace tube equipment can be achieved.

[0045] Please see Figures 1 to 4 In one embodiment, at least one reaction gas line 30 is provided. The reaction gas line 30 is also used to introduce a protective gas 80 simultaneously with the introduction of the cleaning gas 70 from the cleaning line 11 into the reaction chamber 21. Thus, while the cleaning line 11 introduces the cleaning gas 70 into the reaction chamber 21, the protective gas 80 is introduced into the input end of the reaction gas line 30. The protective gas 80 introduced into the reaction gas line 30 flows in the opposite direction to the flow of the cleaning gas 70 entering the reaction gas line 30 from its output end, thereby blocking the flow and protecting the input end of the reaction gas line 30 from corrosion caused by the cleaning gas 70 entering the input end.

[0046] Optionally, the protective gas 80 may be any gas that does not chemically react with the clean gas 70, including but not limited to inert gases such as nitrogen, helium, neon, and xenon.

[0047] Specifically, the input end of the reaction gas pipeline 30 is connected not only to the reaction gas source but also to the protective gas source 80. A first control valve is provided at the input end of the reaction gas pipeline 30. This first control valve is used to control the connection between the reaction gas pipeline 30 and the reaction gas source or the protective gas source 80. Optionally, the first control valve may include, but is not limited to, a multi-way control valve. Specifically, a controller is electrically connected to the first control valve, and the controller is used to control the operation of the first control valve.

[0048] During the reaction process, a first control valve connects the reaction gas pipeline 30 to a reaction gas source, which then flows into the reaction chamber 21 via the reaction gas pipeline 30, thereby depositing a film layer on the substrate surface. In the cleaning step, the first control valve connects the reaction gas pipeline 30 to a protective gas source 80, which then flows into the reaction gas pipeline 30, thus protecting the input end of the reaction gas pipeline 30.

[0049] Please see Figure 1 In one embodiment, the furnace tube equipment further includes a second pressure adjustment structure 50 for adjusting the pressure of the protective gas 80. The second pressure adjustment structure 50 is connected to the reaction gas pipeline 30 and is also electrically connected to the controller. Thus, the controller coordinates the operation of the first pressure adjustment structure 12 and the second pressure adjustment structure 50, enabling precise control of the protective gas 80 pressure, thereby improving the cleaning effect on the reaction gas pipeline 30.

[0050] Please see Figures 1 to 4 Specifically, when the controller controls the first pressure adjustment structure 12 to operate at a first preset pressure P1, it also simultaneously controls the second pressure adjustment structure 50 to operate at a third preset pressure; when the controller controls the first pressure adjustment structure 12 to operate at a second preset pressure P2, it also simultaneously controls the second pressure adjustment structure 50 to operate at a fourth preset pressure. The third preset pressure is lower than the fourth preset pressure. This improves the cleaning effect on the reaction gas pipeline 30.

[0051] Similar to the first pressure regulating structure 12, the second pressure regulating structure 50 may optionally include a second pressure regulating valve and / or a second pressure pump connected to the reaction gas pipeline 30; or, the second pressure regulating structure 50 may include a second gas storage container connected to the reaction gas pipeline 30 and a second pressure regulating valve and / or a second pressure pump disposed on the second gas storage container, the second gas storage container being used to store the reaction gas.

[0052] Please see Figure 1 In one embodiment, the reaction gas pipeline 30 includes a first reaction gas pipeline 31 configured in a curved shape. The first reaction gas pipeline 31 includes a vertical pipe section 311 disposed inside the reaction chamber 21 and a horizontal pipe section 312 extending through the shell 20 into the reaction chamber 21. The vertical pipe section 311 is connected to the horizontal pipe section 312. The vertical pipe section 311 is provided with a plurality of first air holes 314 arranged along its extension direction. Several first air holes 314 near the docking position of the horizontal pipe section 312 and the vertical pipe section 311 are each configured as guide holes. The guide holes are used to guide the cleaning gas 70 to the docking position of the horizontal pipe section 312 and the vertical pipe section 311. Thus, during the cleaning process of the furnace tube equipment, when the cleaning gas 70 enters the first reaction gas pipeline 31 through the guide hole, it is beneficial to guide the cleaning gas 70 to the docking position of the horizontal pipe section 312 and the vertical pipe section 311, that is, the bending part 313 of the first reaction gas pipeline 31, thereby improving the cleaning effect on the bending part 313.

[0053] As some alternative solutions, instead of simply designating several first air holes 314 near the junction of the horizontal pipe section 312 and the vertical pipe section 311 as guide holes, the remaining first air holes 314 on the vertical pipe section 311 can also be flexibly adjusted and set as guide holes according to actual needs. This allows the cleaning gas to be guided and diffused towards the junction of the horizontal pipe section 312 and the vertical pipe section 311, entering deep into the bend, thereby improving the cleaning effect on the bend 313. Of course, the remaining first air holes 314 on the vertical pipe section 311 can also be opened perpendicular to the central axis of the vertical pipe section 311.

[0054] Please see Figure 5 , Figure 5 It shows Figure 4The diagram shows a cross-sectional view of an embodiment at circle A. In one embodiment, the guide hole includes an oblique hole disposed on the vertical pipe section 311, with the central axis O of the oblique hole forming an acute angle with the central axis Z of the vertical pipe section 311. The angle formed by the central axis O of the oblique hole and the central axis Z of the vertical pipe section 311 is defined as α, which is, for example, from 15° to 75°, including but not limited to 15°, 20°, 30°, 45°, 50°, 60°, 65°, 70°, and 75°, or may be set to a value other than 15° to 75° according to actual needs.

[0055] In another embodiment, the guide hole may also be an arc-shaped hole disposed on the wall of the vertical pipe section 311, or a combination of an arc-shaped hole and an oblique hole.

[0056] Please see Figure 6 , Figure 6 It shows Figure 4 The diagram shows a cross-sectional view of another embodiment of the structure at circle A. In yet another embodiment, the inner wall of the vertical pipe section 311 is provided with a guide portion 315 that communicates with the guide hole. The guide portion 315 includes an arc-shaped section and / or a straight section that forms an acute angle with the central axis Z of the vertical pipe section 311. Thus, under the guidance of the guide portion 315, the cleaning gas 70 diffuses along the downwardly curved or inclined guide portion 315, and under its own gravity, it is advantageous to introduce the cleaning gas 70 into the curved portion 313, into the depth of the first reaction gas pipeline 31, for better removal of by-products.

[0057] Of course, in some alternative solutions, the central axis O of the first vent 314 is, for example, perpendicular to the central axis of the vertical pipe section 311.

[0058] Please see Figure 3 or Figure 4 In one embodiment, to improve the uniformity of gas flow from the first reaction gas pipeline 31 into the reaction chamber 21 during the reaction process, the diameter of the first gas hole 314 decreases from the top to the bottom of the vertical pipe section 311. This ensures that the gas flow from the first reaction gas pipeline 31 into the reaction chamber 21 is uniform along the vertical direction, which is beneficial for the uniformity of substrate deposition at different heights on the crystal boat 60. Of course, the diameter of each first gas hole 314 can remain constant, increase, or be configured in other structural forms from the top to the bottom of the vertical pipe section 311. The specific configuration can be flexibly adjusted and configured according to actual needs and is not limited here.

[0059] Please see Figure 1In one embodiment, the reaction gas pipeline 30 includes at least one second reaction gas pipeline 32 arranged in a straight line. The second reaction gas pipeline 32 penetrates the bottom wall of the housing 20 and is vertically arranged inside the reaction chamber 21. The reaction gas is delivered upward from the bottom of the second reaction gas pipeline 32 and enters the reaction chamber 21 through a plurality of second gas holes opened on the side wall of the second reaction gas pipeline 32.

[0060] Please see Figure 1 In one embodiment, the controller is further configured to simultaneously control the suction pump 40 to operate at a first working power when the first pressure adjustment structure 12 is operating at a first preset gas pressure P1; and simultaneously control the suction pump 40 to operate at a second working power when the first pressure adjustment structure 12 is operating at a second preset gas pressure P2. The second working power is greater than the first working power. Thus, when cleaning gas 70 at the second preset gas pressure P2 is introduced into the furnace tube equipment, the cleaning gas 70 cannot enter the bend 313 of the reaction gas pipeline 30 due to insufficient pressure. The suction pump 40 operates at the relatively higher second working power, which facilitates the discharge of by-product particles at the bend 313 of the reaction gas pipeline 30, resulting in a more significant cleaning effect.

[0061] Please see Figures 1 to 4 In one embodiment, a cleaning method for a furnace tube device according to any of the above embodiments includes the following steps:

[0062] Cleaning gas 70 is alternately introduced into the reaction chamber 21 through the cleaning pipeline 11 at a first preset pressure P1 and a second preset pressure P2 (e.g., ...). Figure 2 As shown), protective gas 80 is simultaneously introduced into the reaction gas pipeline 30 from the input end of the reaction gas pipeline 30, and the gas inside the reaction chamber 21 is extracted outward by the suction pump 40.

[0063] The above-mentioned cleaning method can achieve a good cleaning effect on the furnace tube equipment when the first pressure adjustment structure 12 runs alternately according to the first preset air pressure P1 and the second preset air pressure P2.

[0064] In one embodiment, the step of introducing protective gas 80 from the inlet of reaction gas line 30 into the interior of reaction gas line 30 includes:

[0065] When the cleaning gas 70 is introduced into the reaction chamber 21 at a first preset pressure P1, the protective gas 80 is introduced into the reaction gas pipeline 30 from the inlet end of the reaction gas pipeline 30 at a third preset pressure; when the cleaning gas 70 is introduced into the reaction chamber 21 at a second preset pressure P2, the protective gas 80 is introduced into the reaction gas pipeline 30 from the inlet end of the reaction gas pipeline 30 at a fourth preset pressure; wherein the third preset pressure is lower than the fourth preset pressure. This improves the cleaning effect on the bottom of the reaction gas pipeline 30.

[0066] In one embodiment, the first preset gas pressure P1 is, but is not limited to, 5 tor to 10 tor, and the second preset gas pressure P2 is, but is not limited to, 0 tor to 6 tor. Thus, when the cleaning pipeline 11 introduces the cleaning gas 70 into the reaction chamber 21 according to the first preset gas pressure P1, a pressure of, for example, 5 tor to 10 tor is sufficient; similarly, when the cleaning pipeline 11 introduces the cleaning gas 70 into the reaction chamber 21 according to the second preset gas pressure P2, a pressure of, for example, 0 tor to 6 tor is sufficient, thereby achieving a good cleaning effect on the reaction gas pipeline 30. Of course, in specific implementations, the specific settings of the first preset gas pressure P1 and the second preset gas pressure P2 can be flexibly adjusted and set according to the critical gas pressure in the actual furnace tube equipment that allows the cleaning gas 70 to enter the bend 313 of the reaction gas pipeline 30.

[0067] The first stage is defined as the phase in which cleaning gas 70 is introduced into the reaction chamber 21 through cleaning pipeline 11 at a first preset pressure P1, and the second stage is defined as the phase in which cleaning gas 70 is introduced into the reaction chamber 21 through cleaning pipeline 11 at a second preset pressure P2. During the actual cleaning process, the first and second stages will alternate. It should be noted that the first preset pressure P1 in each of the first stages only needs to meet its respective set range; it can be completely consistent or completely different. Similarly, the second preset pressure P2 in each of the second stages only needs to meet its respective set range; it can be completely consistent or completely different.

[0068] In one embodiment, the process of extracting gas from the reaction chamber 21 using a suction pump 40 includes the following steps:

[0069] When the cleaning gas 70 is introduced into the reaction chamber 21 at a first preset pressure P1, the suction pump 40 is controlled to operate at a first working power; when the cleaning gas 70 is introduced into the reaction chamber 21 at a second preset pressure P2, the suction pump 40 is controlled to operate at a second working power; wherein the second working power is greater than the first working power. Thus, when the cleaning gas 70 at the second preset pressure P2 is introduced into the furnace tube equipment, the cleaning gas 70 cannot enter the bend 313 of the reaction gas pipeline 30 due to insufficient pressure. The suction pump 40 operates at the relatively higher second working power, which facilitates the discharge of by-product particles at the bend 313 of the reaction gas pipeline 30, resulting in a more significant cleaning effect.

[0070] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0071] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0072] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0073] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0074] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0075] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0076] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A cleaning component for furnace tube equipment, characterized in that, The cleaning components for the furnace tube equipment include: A cleaning pipeline is provided for connecting to the reaction chamber of the furnace tube equipment to introduce cleaning gas into the reaction chamber. A first pressure adjustment structure, connected to the cleaning pipeline, is used to adjust the gas pressure supplied through the cleaning pipeline into the reaction chamber; and The controller is electrically connected to the first pressure adjustment structure and is used to control the first pressure adjustment structure to operate alternately according to a first preset air pressure and a second preset air pressure, wherein the first preset air pressure is greater than the second preset air pressure. The cleaning pipeline is used to connect to a clean gas source, and the first pressure adjustment structure includes a first pressure adjustment valve and / or a first pressure pump connected to the cleaning pipeline; or, the first pressure adjustment structure includes a first gas storage container connected to the cleaning pipeline and a first pressure adjustment valve and / or a first pressure pump disposed on the first gas storage container, wherein the first gas storage container is used to store clean gas.

2. A furnace tube device, characterized in that, The furnace tube equipment includes the cleaning assembly as described in claim 1, and further includes a shell forming a reaction chamber, a reaction gas pipeline extending through the shell into the interior of the reaction chamber, and a suction pump communicating with the reaction chamber; the cleaning pipeline is communicating with the reaction chamber, and the suction pump is electrically connected to the controller; at least one reaction gas pipeline is provided, and the reaction gas pipeline is also used to introduce a protective gas while the cleaning gas from the cleaning pipeline is introduced into the interior of the reaction chamber.

3. The furnace tube equipment according to claim 2, characterized in that, The furnace tube equipment also includes a second pressure adjustment structure for adjusting the pressure of the protective gas. The second pressure adjustment structure is connected to the reaction gas pipeline and is also electrically connected to the controller.

4. The furnace tube equipment according to claim 2, characterized in that, The reaction gas pipeline includes a first reaction gas pipeline configured in a curved shape. The first reaction gas pipeline includes a vertical pipe section located inside the reaction chamber and a horizontal pipe section extending through the pipe shell into the reaction chamber. The vertical pipe section is connected to the horizontal pipe section. The vertical pipe section is provided with a plurality of first air holes arranged along its extension direction. Several first air holes near the docking position of the horizontal pipe section and the vertical pipe section are each configured as guide holes. The guide holes are used to guide the clean gas to the docking position of the horizontal pipe section and the vertical pipe section.

5. The furnace tube equipment according to claim 4, characterized in that, The guide hole includes an oblique hole disposed on the vertical pipe section, the central axis of the oblique hole being set at an acute angle to the central axis of the vertical pipe section; and / or, the guide hole includes an arc-shaped hole disposed on the wall of the vertical pipe section; and / or, the inner wall of the vertical pipe section is provided with a guide portion corresponding to and communicating with the guide hole, the guide portion including an arc-shaped segment and / or a straight segment set at an acute angle to the central axis of the vertical pipe section.

6. The furnace tube equipment according to claim 2, characterized in that, The controller is also configured to simultaneously control the suction pump to operate at a first working power when controlling the first pressure adjustment structure to operate at a first preset air pressure; and to simultaneously control the suction pump to operate at a second working power when controlling the first pressure adjustment structure to operate at a second preset air pressure; wherein the second working power is greater than the first working power.

7. A method for cleaning furnace tube equipment as described in any one of claims 2 to 6, characterized in that, The cleaning method includes the following steps: Cleaning gas is alternately introduced into the reaction chamber through a cleaning pipeline at a first preset pressure and a second preset pressure. Simultaneously, protective gas is introduced into the reaction gas pipeline from the input end, and the gas inside the reaction chamber is extracted outward by a suction pump.

8. The cleaning method for furnace tube equipment according to claim 7, characterized in that, The step of introducing protective gas from the input end of the reaction gas pipeline into the interior of the reaction gas pipeline includes: when cleaning gas is introduced into the interior of the reaction chamber at a first preset pressure, protective gas is introduced into the interior of the reaction gas pipeline from the input end of the reaction gas pipeline at a third preset pressure; when cleaning gas is introduced into the interior of the reaction chamber at a second preset pressure, protective gas is introduced into the interior of the reaction gas pipeline from the input end of the reaction gas pipeline at a fourth preset pressure; wherein, the third preset pressure is less than the fourth preset pressure; And / or, the step of extracting the gas inside the reaction chamber outward by means of a suction pump includes the following steps: when clean gas is introduced into the reaction chamber at a first preset pressure, the suction pump is controlled to operate at a first working power; when clean gas is introduced into the reaction chamber at a second preset pressure, the suction pump is controlled to operate at a second working power; wherein, the second working power is greater than the first working power.

9. The cleaning method for furnace tube equipment according to claim 7, characterized in that, The first preset air pressure is 5 tor-10 tor, and the second preset air pressure is 0 tor-6 tor.

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