LED lamp bead device and production process thereof

Abstract

The present invention belongs to the technical field of infrared light sources, and in particular relates to an LED lamp bead device, comprising a support frame, a reflective cavity opened from an outer wall of one side of the support frame and extending a certain length into the interior thereof, a lead frame fixedly wound around the outside of the support frame and partially opposite to the reflective cavity, at least one chip unit fixedly packaged on a side of the lead frame facing the reflective cavity, and a light-transmitting sealant filled into the reflective cavity and covering the chip unit and part of the lead frame, wherein the chip unit is used to emit light into the reflective cavity and emit it after reflection, and after transmitting electrical energy through the lead frame, the chip unit emits light into the reflective cavity, and the lead frame blocks the chip unit facing the reflective cavity, making it impossible to observe the position of the chip unit from the outside, thereby eliminating the influence of the red exposure phenomenon of the LED's 850nm infrared light source and reducing failure caused by damage or avoidance when observing the infrared tube at close range.

Description

Technical Field

[0001] The present invention belongs to the technical field of infrared light sources, and in particular relates to an LED lamp bead device and a production process thereof. Background Art

[0002] Infrared night vision means that in the night vision state, the digital camera will emit infrared light that is invisible to the naked eye to illuminate the object being photographed. When the infrared filter is turned off, what we see is the image formed by the reflection of infrared light, rather than the image formed by the reflection of visible light. That is, images that are invisible to the naked eye in dark environments can be captured at this time. In the past, infrared lights were rarely used in television monitoring system projects. The role of infrared in night monitoring is more prominent. It is not only used in important departments such as vaults, oil depots, armories, libraries, cultural relics departments, prisons, etc., but also in general monitoring systems. Even residential area television monitoring projects also use infrared cameras.

[0003] Currently, infrared emitting tubes with wavelengths of 810nm to 960nm in the security market are more suitable for use in infrared cameras. In addition, infrared cameras using 850nm wavelengths have better sensitivity than 940nm wavelengths and a longer transmission distance. Therefore, 850nm infrared tubes with a slight red exposure are more suitable for use in long-range infrared cameras and have become the mainstream. However, due to the slight red exposure, infrared emitting tubes with a wavelength of 850nm are easily discovered at close range and can be destroyed or rendered ineffective by evasion. Therefore, how to eliminate the red exposure phenomenon of the 850nm infrared light source of LEDs and thus improve concealment has become an urgent problem to be solved. Summary of the Invention

[0004] The purpose of the present invention is to provide an LED lamp bead device and its production process, aiming to solve the problem in the prior art about how to eliminate the influence of the red exposure phenomenon of the 850nm infrared light source of the LED, thereby improving the concealment.

[0005] The present invention is implemented as follows: an LED lamp bead device includes: a support frame, a reflective cavity opened from the outer wall of one side of the support frame and extending a certain length into the interior thereof, a lead bracket fixedly wound around the outside of the support frame and opposite to the reflective cavity, at least one chip unit fixedly packaged on the side of the lead bracket facing the reflective cavity, and a light-transmitting sealant filled in the reflective cavity and covering the chip unit and part of the lead bracket, wherein the chip unit is used to emit light into the reflective cavity and emit it after reflection.

[0006] An LED lamp bead device of the present invention utilizes a reflective cavity opened on one side of a support frame and can cooperate with a lead bracket to encapsulate a chip unit on the side of the lead bracket facing the reflective cavity, and the reflective cavity is filled with a transparent sealant to fix the chip unit and the lead bracket. After transmitting electrical energy through the lead bracket, the chip unit emits light into the reflective cavity, and after reflection, it is emitted from the reflective cavity. Since the chip unit is arranged facing the reflective cavity, the lead bracket can block it, so the position of the chip unit cannot be observed from the outside, avoiding the red light head emitting from the front to be exposed, thereby eliminating the impact of the red light exposure phenomenon of the LED 850nm infrared light source, reducing the failure caused by damage or avoidance when observing the infrared tube at close range, and improving the concealment of the infrared light source.

[0007] Preferably, the lead frame includes: a positive conductive frame and a negative conductive frame fixedly packaged on the outside of the support frame and not connected to each other, the end of the positive conductive frame is provided with a welding wire area facing the reflective cavity, the end of the negative conductive frame is provided with a solid crystal area facing the reflective cavity, and the chip unit is installed between the welding wire area and the solid crystal area.

[0008] Preferably, the wafer unit comprises: a light emitting chip fixedly attached to the die-bonding area and a gold wire connected between the light emitting chip and the wire bonding area.

[0009] Preferably, the outer wall of the support frame is provided with two mounting grooves symmetrically distributed on both sides of the reflective cavity, and the positive conductive frame and the negative conductive frame are fixedly packaged in the two mounting grooves respectively.

[0010] Preferably, the mounting groove includes: a top groove connected to the reflective cavity port, a side groove opened on the outer wall of the support frame and connected to the top groove, and a pin port provided on the side of the support frame away from the reflective cavity port and vertically connected to the side groove.

[0011] Preferably, the positive conductive frame includes: a top edge portion, a side edge portion and a pin portion that are fixedly connected and sequentially wound around the top edge groove, the side edge groove and the pin opening, a portion of the top edge portion is fixed inside the top edge groove, and the remaining portion is passed through the inside of the reflective cavity, and the welding wire area is arranged on the side of the top edge portion facing the reflective cavity; the negative conductive frame includes the same structure as the positive conductive frame, except that it also includes a mounting portion arranged at one end of the top edge portion away from the side edge portion, and the solid crystal area is arranged on the side of the mounting portion facing the reflective cavity.

[0012] Preferably, the light-transmitting sealant is filled in the reflective cavity and covers the light-emitting chip, and the top surface of the light-transmitting sealant is lower than the end of the reflective cavity.

[0013] Preferably, the inner side wall of the reflective cavity is set as a plane wall, and the inner wall of the reflective cavity away from the port end is set as an arc wall connected to the plane wall, the surface layers of the plane wall and the arc wall are both electroplated nickel alloy layers, and the solid crystal area and the welding wire area are both arranged facing the arc wall.

[0014] The present invention also provides a production process for an LED lamp bead device, comprising:

[0015] S1: bonding the light-emitting chip to the die-bonding area of ​​the negative electrode conductive frame and performing a baking and curing process;

[0016] S2: welding the light-emitting chip cured by baking in step S1 to the bonding area of ​​the positive electrode conductive frame through gold wire, and performing bubble prevention and baking curing on the light-emitting chip;

[0017] S3: Place the positive and negative conductive frames upside down in the top grooves on both sides of the reflective cavity in the positive and negative directions, so that the light-emitting chip and the bonding area face the curved wall.

[0018] S4: performing bubble prevention treatment on the positive electrode conductive frame and the negative electrode conductive frame placed in step S3 to ensure that both are fixed to the top edge groove;

[0019] S5: preparing liquid sealing glue, injecting the prepared sealing glue into the reflective cavity, and performing baking and curing treatment;

[0020] S6: The positive conductive frame and the negative conductive frame are respectively subjected to two 90° stamping and bending processes to obtain side portions and pin portions, and the formed side portions and pin portions are respectively fixed to the side grooves and the pin openings to obtain LED lamp bead devices.

[0021] The present invention provides a production process for LED lamp bead devices, which includes bonding a light-emitting chip to a solidification area of ​​a negative conductive frame, performing a baking and curing treatment, and welding the positive guide frame with a gold wire, thereby achieving fixed installation of the light-emitting chip; then, the positive conductive frame and the negative conductive frame are inverted inside the top edge grooves on both sides, so that the light-emitting chip and the welding wire area both face the arc-shaped wall of the reflective cavity, thereby achieving concealed installation of the light-emitting chip; then, the positive conductive frame and the negative conductive frame are sealed with glue and bent into shape, so that the pins and side edges are conveniently energized to the top edge and the light-emitting chip, which can play an aesthetic and fool-proof role, and facilitates the rapid production of LED lamp bead devices.

[0022] Preferably, step S5 specifically includes the following steps:

[0023] S51: Place silicone or epoxy resin into the container;

[0024] S52: Mixing and stirring the silica gel or epoxy resin in step S51 to obtain a mixed sealing glue;

[0025] S53: injecting the mixed sealing compound stirred in step S52 into the interior of the reflective cavity until the sealing compound covers the light-emitting chip and the top surface is lower than the end of the reflective cavity;

[0026] S54: baking the sealant poured in step S53 at 150° C. for 3 hours until the sealant is solidified.

[0027] Compared with the prior art, the beneficial effects of the present invention are: the reflective cavity opened on one side of the support frame can be cooperated with the lead bracket to encapsulate the chip unit on the side of the lead bracket facing the reflective cavity, and the reflective cavity is filled with a transparent sealant to fix the chip unit and the lead bracket. After the chip unit transmits electric energy through the lead bracket, it emits light into the reflective cavity, and after reflection, it is emitted from the reflective cavity. Since the chip unit is arranged facing the reflective cavity, the lead bracket can block it, so the position of the chip unit cannot be observed from the outside, avoiding the red exposure head of the front light emitting from the front to be exposed, thereby eliminating the impact of the red exposure phenomenon of the LED's 850nm infrared light source, reducing the failure caused by damage or avoidance when observing the infrared tube at close range, and improving the concealment of the infrared light source. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A three-dimensional structural diagram of an LED lamp bead device provided by the present invention;

[0029] Figure 2 A three-dimensional structural diagram of a lead frame of an LED lamp bead device provided by the present invention;

[0030] Figure 3 A bottom view of the connection between the positive conductive frame and the negative conductive frame of an LED lamp bead device provided by the present invention;

[0031] Figure 4 A three-dimensional structural diagram of the support frame of an LED lamp bead device provided by the present invention after removing the lead bracket and the light-transmitting sealant;

[0032] Figure 5 A bottom view of a support frame for an LED lamp bead device provided by the present invention;

[0033] Figure 6 A side cross-sectional view of an LED lamp bead device provided by the present invention after removing the light-transmitting sealant.

[0034] In the accompanying drawings: 1 support frame, 2 reflective cavity, 21 plane wall, 22 curved wall, 3 lead bracket, 31 positive conductive frame, 311 top edge, 312 side, 313 pin, 32 negative conductive frame, 321 mounting portion, 33 wire bonding area, 34 solid crystal area, 4 chip unit, 41 light-emitting chip, 42 gold wire, 5 light-transmitting sealant, 6 mounting groove, 61 top groove, 62 side groove, 63 pin opening, 7 notch groove, 8 insulation layer. DETAILED DESCRIPTION

[0035] To make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the specific technical solutions of the present application will be further described in detail below in conjunction with the drawings in the embodiments of the present application. The following embodiments are used to illustrate the present application but are not intended to limit the scope of the present application.

[0036] In the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of this application, unless otherwise specified, "multiple" means two or more.

[0037] In addition, in the embodiments of the present application, directional terms such as "up", "down", "left" and "right" are defined relative to the orientation of the components in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they may change accordingly according to changes in the orientation of the components in the drawings.

[0038] In the embodiments of the present application, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integrated connection; it can be a direct connection or an indirect connection through an intermediate medium.

[0039] In the embodiments of the present application, the terms "comprises," "comprising," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0040] In the embodiments of this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be interpreted as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0041] Example 1

[0042] like Figure 1-Figure 3 As shown, it is a structural diagram of an LED lamp bead device and its production process provided by the present invention, including: a support frame 1, a reflective cavity 2 opened from the outer wall of one side of the support frame 1 to the inside thereof and extending a certain length, a lead bracket 3 fixedly wound around the outside of the support frame 1 and partially opposite to the reflective cavity 2, at least one chip unit 4 fixedly packaged on the side of the lead bracket 3 facing the reflective cavity 2, and a light-transmitting sealing glue 5 filled in the reflective cavity 2 and covering the chip unit 4 and part of the lead bracket 3, the chip unit 4 is used to emit light into the reflective cavity 2 and emit it after reflection.

[0043] In actual application, this embodiment utilizes the reflective cavity 2 opened on one side of the support frame 1 to cooperate with the lead bracket 3, so that the chip unit 4 is encapsulated on the side of the lead bracket 3 facing the reflective cavity 2, and the reflective cavity 2 is filled with a transparent sealant 5 to fix the chip unit 4 and the lead bracket 3. After transmitting electric energy through the lead bracket 3, the chip unit 4 emits light into the reflective cavity 2, and after reflection, it is emitted from the reflective cavity 2. Since the chip unit 4 is arranged facing the reflective cavity 2, the lead bracket 3 can block it, so the position of the chip unit 4 cannot be observed from the outside, avoiding the red exposure head of the front light being exposed, thereby eliminating the influence of the red exposure phenomenon of the LED's 850nm infrared light source, reducing the failure caused by damage or avoidance when observing the infrared tube at close range, and improving the concealment of the infrared light source.

[0044] It should be noted that, due to the concealed installation of the chip unit 4, the chip unit 4 can emit light into the reflective cavity 2 and then reflect it out, and the light-transmitting sealant 5 can ensure the light-transmitting effect, thereby reducing the risk of the infrared tube being damaged.

[0045] Specifically, if Figure 2 and Figure 3 As shown, the lead frame 3 includes: a positive conductive frame 31 and a negative conductive frame 32 fixedly packaged on the outside of the support frame 1 and not connected to each other, a wire bonding area 33 facing the reflective cavity 2 is provided at the end of the positive conductive frame 31, and a solid crystal area 34 facing the reflective cavity 2 is provided at the end of the negative conductive frame 32, and the chip unit 4 is installed between the wire bonding area 33 and the solid crystal area 34.

[0046] It can be seen that the welding wire area 33 provided at the end of the positive conductive frame 31 and the solid crystal area 34 provided at the end of the negative conductive frame 32 are used to facilitate the fixation and installation of the chip unit 4. The non-connected positive conductive frame 31 and negative conductive frame 32 can be connected to the positive and negative poles of the external power supply respectively, thereby realizing the power supply of the chip unit 4.

[0047] Furthermore, the wafer unit 4 includes a light emitting chip 41 fixedly attached to the die-bonding area 34 and a gold wire 42 connected between the light emitting chip 41 and the wire bonding area 33 .

[0048] It should be noted that, by using the light-emitting chip 41 fixed to the die-bonding area 34 and the gold wire 42 connected between the light-emitting chip 41 and the wire bonding area 33, the light-emitting chip 41 can emit light toward the reflective cavity 2 when power is turned on, and the light is reflected out through the reflective cavity 2.

[0049] In actual operation of this embodiment, at least one chip unit 4 can be set as one group or multiple groups, and a single or multiple light-emitting chips 41 of different sizes can be installed. As long as it can meet different degrees of lighting needs, this embodiment does not make specific limitations here.

[0050] Example 2

[0051] like Figure 4 and Figure 5 As shown, based on Example 1, the outer wall of the support frame 1 is provided with two mounting grooves 6 symmetrically distributed on both sides of the reflective cavity 2, and the positive conductive frame 31 and the negative conductive frame 32 are fixedly packaged inside the two mounting grooves 6 respectively.

[0052] In actual application, this embodiment utilizes two mounting grooves 6 symmetrically arranged on the outer wall of the support frame 1 to facilitate mounting the positive conductive frame 31 and the negative conductive frame 32 on both sides of the reflective cavity 2, thereby achieving their fixation and providing a structural basis for the hidden installation of the chip unit 4.

[0053] Furthermore, the mounting groove 6 includes: a top groove 61 connected to the end of the reflective cavity 2, a side groove 62 opened on the outer wall of the support frame 1 and connected to the top groove 61, and a pin port 63 provided on the side of the support frame 1 away from the end of the reflective cavity 2 and vertically connected to the side groove 62.

[0054] Furthermore, if Figure 2As shown, the positive conductive frame 31 includes: a top edge portion 311, a side edge portion 312 and a pin portion 313 that are fixedly connected and sequentially wound in the top edge groove 61, the side edge groove 62 and the pin opening 63, a portion of the top edge portion 311 is fixed inside the top edge groove 61, and the remaining portion is connected to the inside of the reflective cavity 2, and the welding wire area 33 is arranged on the side of the top edge portion 311 facing the reflective cavity 2; the negative conductive frame 32 includes the same structure as the positive conductive frame 31, except that it also includes a mounting portion 321 arranged at one end of the top edge portion 311 away from the side edge portion 312, and the solid crystal area 34 is arranged on the side of the mounting portion 321 facing the reflective cavity 2.

[0055] It can be known that the top edge groove 61 opened on the outer wall of the support frame 1 and connected to both sides of the port of the reflective cavity 2 can be used to fix the top edge 311 of the positive conductive frame 31 and the negative conductive frame 32, and the side edge 312 and the pin portion 313 on the side of the support frame 1 can be fixed with the side edge 312 and the pin portion 313 of the positive conductive frame 31 and the negative conductive frame 32 in sequence. The installation groove 6 can provide an installation basis for the positive conductive frame 31 and the negative conductive frame 32, and play a role in aesthetics and foolproofing.

[0056] It should be noted that the lead bracket 3 in this embodiment can be fixed by means of the mounting groove 6 in this embodiment, which not only ensures stable installation, but also improves the aesthetics of the lamp bead device. Of course, the lead bracket 3 can also be directly welded to the outside of the support frame 1. As long as the hidden installation of the chip unit 4 can be achieved, the installation method of this embodiment is not a restrictive regulation.

[0057] Exemplarily, both the positive conductive frame 31 and the negative conductive frame 32 can be PLCC, that is, a plastic chip carrier with leads or an EMC bracket; the solid crystal area 34 can be a circular area set on the mounting portion 321, and the wire bonding area can be a conductive area set on the top edge 311 of the positive conductive frame 31. The size range of the light-emitting chip 41 can be 0-50 mil; the thickness of the positive conductive frame 31 and the negative conductive frame 32 can be 0.25-0.3 mm; the surface of the positive conductive frame 31 and the negative conductive frame 32 is electroplated with nickel alloy, and the thickness range is 20-80 um.

[0058] Exemplarily, the support frame 1 can be injection molded from ABS, and of course can also be molded from other materials and forms; the light-transmitting sealant 5 can be silicone, epoxy resin, or a mixture of the two; this embodiment is not specifically limited here.

[0059] Example 3

[0060] like Figure 6As shown, based on Example 1 and Example 2, the inner wall of the reflective cavity 2 is set as a plane wall 21, and the inner wall of the reflective cavity 2 away from the end of the port is set as an arc wall 22 connected to the plane wall 21, the surface layers of the plane wall 21 and the arc wall 22 are both electroplated nickel alloy layers, and the solid crystal area 34 and the welding wire area 33 are both arranged facing the arc wall 22.

[0061] Specifically, by setting the inner wall of the reflective cavity 2 as a plane wall 21 and the inner wall of the end away from the port as an arc wall 22, the light emitted by the light-emitting chip 41 can be reflected, so that the light is emitted through the port of the reflective cavity 2, and the surface layer adopts an electroplated nickel alloy layer, which can better reflect the light.

[0062] It can be seen that the surface of the reflective cavity 2 is made of an electro-nickel alloy layer, has no blind spots or protrusions, a smooth and shiny surface, no sharp edges, no nodules at right angles, and no discoloration or dark areas.

[0063] Furthermore, the light-transmitting sealant 5 is filled in the reflective cavity 2 and covers the light-emitting chip 41 , and the top surface of the light-transmitting sealant 5 is lower than the end of the reflective cavity 2 .

[0064] It can be seen that the light-transmitting sealant 5 filled in the reflective cavity 2 can fix the lead frame 3 and the light-emitting chip 41, and can also assist in light transmission, ensuring that the light-emitting chip 41 emits light into the reflective cavity 2 and then reflects it out.

[0065] Furthermore, if Figure 5 As shown, a notch 7 is provided at one corner of the support frame 1 where the negative electrode conductive frame 32 is installed, serving as a negative electrode mark to facilitate installation of the wafer unit 4 and to facilitate users to know the position of the negative electrode.

[0066] In actual operation of this embodiment, an insulating layer 8 is provided on the side of the support frame 1 away from the port of the reflective cavity 2, and the insulating layer 8 is provided between the two pin openings 63, thereby preventing the two pin portions 313 of the positive conductive frame 31 and the negative conductive frame 32 from contacting each other; and during use, the two pin portions 313 are energized, so that the circuit of the chip unit 4 connected between the positive conductive frame 31 and the negative conductive frame 32 is turned on, thereby achieving continuous luminescence.

[0067] Example 4

[0068] This embodiment is an embodiment of a production process for LED lamp beads, including:

[0069] S1: bonding the light emitting chip 41 to the crystal bonding area 34 of the negative electrode conductive frame 32 and performing a baking and curing process;

[0070] S2: welding the light emitting chip 41 cured by baking in step S1 to the bonding area 33 of the positive electrode conductive frame 31 through the gold wire 42, and performing bubble prevention and baking curing on the light emitting chip 41;

[0071] S3: Place the positive conductive frame 31 and the negative conductive frame 32 upside down in the top groove 61 on both sides of the reflective cavity 2 in the positive and negative directions, so that the light emitting chip 41 and the bonding area 33 face the arc wall 22;

[0072] S4: performing bubble prevention treatment on the positive electrode conductive frame 31 and the negative electrode conductive frame 32 placed in step S3 to ensure that both are fixed to the top edge groove 61;

[0073] S5: preparing liquid sealing glue, injecting the prepared sealing glue into the reflective cavity 2, and performing baking and curing treatment;

[0074] S6: The positive conductive frame 31 and the negative conductive frame 32 are respectively subjected to two 90° stamping and bending processes to obtain the side portion 312 and the pin portion 313, and the formed side portion 312 and the pin portion 313 are respectively fixed to the side groove 62 and the pin opening 63 to obtain the LED lamp bead device.

[0075] It can be seen that the light-emitting chip 41 is bonded to the solid crystal area 34 of the negative conductive frame 32 and is baked and cured, and is welded to the positive guide frame through the gold wire 42, so as to achieve the fixation and conduction of the light-emitting chip 41; then the positive conductive frame 31 and the negative conductive frame 32 are turned upside down inside the top edge groove 61 on both sides, so that the light-emitting chip 41 and the welding wire area 33 are facing the arc wall 22 of the reflective cavity 2, thereby achieving the concealed installation of the light-emitting chip 41, and then the positive conductive frame 31 and the negative conductive frame 32 are sealed with glue and bent into shape, and the pin portion 313 and the side portion 312 are convenient for powering the top edge portion 311 and the light-emitting chip 41, which can play a role in aesthetics and fool-proofing, and facilitate the rapid production of LED lamp bead devices.

[0076] In the actual operation of this embodiment, in step S1 and step S2, the temperature and time of the baking and curing treatment are respectively 150° C. for 1.5 h and 150° C. for 0.5 h.

[0077] In step S2 , the foolproofing treatment of the light emitting chip 41 is generally made of silicone or epoxy resin, but other materials may also be used, which is not specifically limited in this embodiment.

[0078] In step S4, the positive electrode conductive frame 31 and the negative electrode conductive frame 32 are subjected to bubble prevention treatment, specifically including: using silicone and epoxy resin to fill the top edge portion 311 and the top edge groove 61 respectively, and baking and curing them at a temperature of 150° C. for 3 hours.

[0079] Furthermore, step S5 specifically includes the following steps:

[0080] S51: Place silicone or epoxy resin into the container;

[0081] S52: Mixing and stirring the silica gel or epoxy resin in step S51 to obtain a mixed sealing glue;

[0082] S53: injecting the mixed sealing compound stirred in step S52 into the interior of the reflective cavity 2 until the sealing compound covers the light emitting chip 41 and the top surface is lower than the end of the reflective cavity 2;

[0083] S54: baking the sealant poured in step S53 at 150° C. for 3 hours until the sealant is solidified.

[0084] It should be noted that in step S52, the mixing and stirring time can be set to 15 minutes, and the rotation speed can be increased from low speed to high speed, for example, from 800rpm to 2500rpm, and the above two sealing glues are mixed and stirred under the condition of a vacuum degree of 0.5MPA; the sealing glue adopts a high refractive index organic liquid potting glue with high light transmittance, excellent flow performance, and is more convenient to operate.

[0085] In actual operation of this embodiment, in step S6, the positive electrode conductive frame 31 and the negative electrode conductive frame 32 are respectively subjected to two 90° stamping and bending processes, specifically including: after the potting glue molding step is completed, during the first bending process, the edge of the fixed top edge 311 is bent 90° to obtain the side edge 312, and then the side edge 312 is bent 90° again to obtain the pin portion 313.

[0086] The above embodiment of the present invention provides an LED lamp bead device and its production process, which utilizes a reflective cavity 2 opened on one side of the support frame 1 to cooperate with the lead bracket 3, so that the chip unit 4 is encapsulated on the side of the lead bracket 3 facing the reflective cavity 2, and the reflective cavity 2 is filled with a transparent sealant 5 to fix the chip unit 4 and the lead bracket 3. After transmitting electric energy through the lead bracket 3, the chip unit 4 emits light into the reflective cavity 2, and after reflection, it is emitted from the reflective cavity 2. Since the chip unit 4 is arranged facing the reflective cavity 2, the lead bracket 3 can block it, so the position of the chip unit 4 cannot be observed from the outside, avoiding the red exposure head of the front light emitting from the front to be exposed, thereby eliminating the impact of the red exposure phenomenon of the LED's 850nm infrared light source, reducing the failure caused by damage or avoidance when observing the infrared tube at close range, and improving the concealment of the infrared light source.

[0087] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An LED lamp bead device, characterized in that: include: A support frame (1), a reflective cavity (2) extending from an outer wall of one side of the support frame (1) to the inside thereof, a lead frame (3) fixedly arranged around the outside of the support frame (1) and partially opposite to the reflective cavity (2), at least one chip unit (4) fixedly packaged on the side of the lead frame (3) facing the reflective cavity (2), and a light-transmitting sealant (5) filled in the reflective cavity (2) and covering the chip unit (4) and a portion of the lead frame (3), wherein the chip unit (4) is used to Light is emitted into the interior of the reflective cavity (2) and is emitted after being reflected; the lead frame (3) comprises: a positive conductive frame (31) and a negative conductive frame (32) fixedly packaged on the outside of the support frame (1) and not in contact with each other, the end of the positive conductive frame (31) is provided with a welding wire area (33) facing the reflective cavity (2), the end of the negative conductive frame (32) is provided with a solid crystal area (34) facing the reflective cavity (2), and the chip unit (4) is installed between the welding wire area (33) and the solid crystal area (34).

2. The LED lamp bead device according to claim 1, characterized in that: The chip unit (4) comprises: a light-emitting chip (41) fixedly attached to the crystal-fixing area (34) and a gold wire (42) connected between the light-emitting chip (41) and the wire bonding area (33).

3. The LED lamp bead device according to claim 1, characterized in that: The outer wall of the support frame (1) is provided with two mounting grooves (6) symmetrically distributed on both sides of the reflective cavity (2); the positive electrode conductive frame (31) and the negative electrode conductive frame (32) are respectively fixedly packaged inside the two mounting grooves (6).

4. The LED lamp bead device according to claim 3, characterized in that: The mounting groove (6) comprises: a top groove (61) connected to the end of the reflective cavity (2), a side groove (62) opened on the outer side wall of the support frame (1) and connected to the top groove (61), and a pin hole (63) provided on the side of the support frame (1) away from the end of the reflective cavity (2) and vertically connected to the side groove (62).

5. The LED lamp bead device according to claim 4, characterized in that: The positive conductive frame (31) comprises: a top edge portion (311), a side edge portion (312) and a pin portion (313) fixedly connected and sequentially wound around the top edge groove (61), the side edge groove (62) and the pin opening (63); a portion of the top edge portion (311) is fixed inside the top edge groove (61), and the remaining portion is passed through the inside of the reflective cavity (2); the welding wire area (33) is arranged on the side of the top edge portion (311) facing the reflective cavity (2); the negative conductive frame (32) comprises the same structure as the positive conductive frame (31), except that it further comprises a mounting portion (321) arranged at one end of the top edge portion (311) away from the side edge portion (312); and the solid crystal area (34) is arranged on the side of the mounting portion (321) facing the reflective cavity (2).

6. The LED lamp bead device according to claim 2, characterized in that: The light-transmitting sealant (5) is filled inside the reflective cavity (2) and covers the light-emitting chip (41), and the top surface of the light-transmitting sealant (5) is lower than the end of the reflective cavity (2).

7. The LED lamp bead device according to any one of claims 2 to 6, characterized in that: The inner side wall of the reflective cavity (2) is configured as a plane wall (21), and the inner wall of the reflective cavity (2) at one end away from the port is configured as an arcuate wall (22) connected to the plane wall (21). The surface layers of the plane wall (21) and the arcuate wall (22) are both electroplated nickel alloy layers, and the crystal fixing area (34) and the wire bonding area (33) are both arranged facing the arcuate wall (22).

8. A production process for the LED lamp bead device according to any one of claims 1 to 7, characterized in that: include: S1: bonding the light-emitting chip (41) to the crystal-bonding region (34) of the negative electrode conductive frame (32), and performing a baking and curing process; S2: welding the light-emitting chip (41) that has been cured by baking in step S1 to the bonding area (33) of the positive electrode conductive frame (31) through a gold wire (42), and performing bubble prevention and baking curing treatment on the light-emitting chip (41); S3: Place the positive conductive frame (31) and the negative conductive frame (32) upside down in the top edge grooves (61) on both sides of the reflective cavity (2) in the positive and negative directions, so that the light-emitting chip (41) and the bonding wire area (33) face the arc wall (22); S4: performing bubble prevention treatment on the positive electrode conductive frame (31) and the negative electrode conductive frame (32) placed in step S3, so that both are fixed to the top edge groove (61); S5: preparing liquid sealing glue, injecting the prepared sealing glue into the reflective cavity (2), and performing baking and curing treatment; S6: The positive electrode conductive frame (31) and the negative electrode conductive frame (32) are respectively subjected to two 90° stamping and bending processes to obtain side portions (312) and pin portions (313), and the formed side portions (312) and pin portions (313) are respectively fixed to the side grooves (62) and the pin openings (63) to obtain LED lamp bead devices.

9. The production process of the LED lamp bead device according to claim 8, characterized in that: Step S5 specifically includes the following steps: S51: Place silicone or epoxy resin into the container; S52: Mixing and stirring the silica gel or epoxy resin in step S51 to obtain a mixed sealing glue; S53: injecting the mixed sealing glue stirred in step S52 into the interior of the reflective cavity (2) until the sealing glue covers the light-emitting chip (41) and the top surface is lower than the port of the reflective cavity (2); S54: baking the sealant poured in step S53 at 150° C. for 3 hours until the sealant is solidified.

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