A laser cell and a method of manufacturing the same
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHONGQING UNIV
- Filing Date
- 2023-07-31
- Publication Date
- 2026-06-19
AI Technical Summary
In the existing technology, laser cells have low power conversion efficiency, are complex to manufacture and have high costs, and there is a lack of research results on the preparation of laser cells using metal halide perovskites.
A laser cell structure consisting of a transparent substrate, a transparent conductive electrode, a first carrier transport layer, a metal halide perovskite photosensitive layer, a second carrier transport layer, and a metal electrode is adopted. The metal halide perovskite photosensitive layer is prepared by solution method, and the thickness and defects are optimized by gradient annealing crystallization process. The cell performance is improved by combining different carrier transport layers.
This improved the power conversion efficiency of the laser cell, broadened its response range, and reduced manufacturing costs.
Smart Images
Figure CN116887604B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of battery technology, specifically relating to laser batteries and their preparation methods. Background Technology
[0002] Wireless power transmission utilizes electromagnetic beams for long-distance energy transfer, and it is bound to demonstrate unique advantages in near-Earth space and even outer space. Traditional wireless power transmission technologies are inefficient due to their large divergence angles, while laser wireless power transmission, with its precise long-distance wireless power transmission, has irreplaceable advantages. Its energy output end is a laser, and its input end is a laser battery.
[0003] A laser power converter, similar to a solar cell, is a device that converts transmitted laser light into electrical energy. Metal halide perovskites have become a promising solar cell technology with a solar energy conversion efficiency of up to 25%. However, there are currently no research reports on the preparation of laser power converters using metal halide perovskites. Summary of the Invention
[0004] To address the problems existing in the prior art, the technical problem to be solved by this invention is to provide a laser battery that can improve power conversion efficiency, expand the laser wavelength range, and is simple to manufacture while reducing the cost of the laser battery. This invention also provides a method for preparing a laser battery.
[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:
[0006] The laser battery provided by the present invention includes a transparent substrate, a transparent conductive electrode, a first carrier transport layer, a metal halide perovskite photosensitive layer, a second carrier transport layer and a metal electrode stacked from bottom to top; the first carrier transport layer and the second carrier transport layer are electron transport layers or hole transport layers, and the carriers of the first carrier transport layer and the second carrier transport layer are different.
[0007] The metal halide perovskite photosensitive layer has a perovskite structure and the chemical formula MA. x Cs y FA 1-x-y Pb(Cl a Br b I 1-a-b The polycrystalline thin film is 3, where MA, Cs, and FA correspond to methylamine, cesium, and formamidinium, respectively; Pb is lead; Cl, Br, and I correspond to chlorine, bromine, and iodine, respectively; and 0≤x, y, 1-xy≤1, 0≤a, b, 1-ab≤1. The thickness of the polycrystalline thin film is 100-1500 nanometers. As the thickness increases, the short-circuit current density of the laser cell usually shows a trend of first increasing and then decreasing.
[0008] The transparent conductive electrode is one of indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) thin film.
[0009] The electron transport layer is tin oxide (SnO2), titanium oxide (TiO2), zinc oxide (ZnO), niobium oxide (Nb2O5), or C. 60 One type of thin film has a thickness of 10 to 200 nanometers. Different electron transport layers have corresponding optimal thicknesses. Generally, as the thickness increases, the ability of the layer to extract charge carriers first increases and then decreases, ultimately affecting the short-circuit current density and fill factor of the battery.
[0010] The hole transport layer is composed of spiro-OMeTAD, PTAA, MeO-2PACz, and nickel oxide (NiO). x It is one of the vanadium pentoxide (V2O5) thin films with a thickness of 5 to 400 nanometers. Different hole transport layers have corresponding optimal thicknesses. Generally, as the thickness increases, the ability of the layer to extract charge carriers first increases and then decreases, ultimately affecting the short-circuit current density and fill factor of the battery.
[0011] The metal electrode is one of Ag, Al, Cu or Au, and has a thickness of 50 to 400 nanometers.
[0012] The present invention provides a method for preparing a laser cell, comprising the following steps:
[0013] Step 1: Fabricate the first carrier transport layer on the transparent conductive electrode;
[0014] Step 2: Spin-coat a metal halide perovskite precursor solution onto the first carrier transport layer, induce film formation using antisolvent, and then perform a gradient annealing crystallization process to obtain a metal halide perovskite photosensitive layer with a thickness of 100-1500 nanometers.
[0015] The metal halide perovskite described has a perovskite structure and the chemical formula MA. x Cs y FA 1-x-y Pb(Cl a Br b I 1-a-b )3, where MA, Cs, and FA correspond to methylamine, cesium, and formamidinium, respectively; Pb is lead; Cl, Br, and I correspond to chlorine, bromine, and iodine, respectively; and 0 ≤ x, y, 1-xy ≤ 1, 0 ≤ a, b, 1-ab ≤ 1;
[0016] Step 3: Prepare a second carrier transport layer on the metal halide perovskite photosensitive layer;
[0017] Step 4: Deposit metal onto the second carrier transport layer to obtain a metal electrode.
[0018] The process also includes step 5: irradiating the laser cell with a laser, reading the current density-voltage (JV) characteristic curve of the laser cell using a digital source meter to obtain its output performance; the laser wavelength is selected from 355 to 805 nm, the laser frequency is from steady state to 25 MHz, and its power density is from 0.01 to 10 W / cm². 2 It can be adjusted.
[0019] In step 2, the gradient annealing crystallization process of metal halide perovskite is as follows:
[0020] First, heat at a low temperature of 40-80℃ for 20-600 seconds, then increase the temperature to 100-250℃ and heat for 5-60 minutes. This "gradient annealing crystallization" method refines the annealing temperature and time according to the different compositions of the perovskite.
[0021] In step 2, after gradient annealing and crystallization of the metal halide perovskite, it is treated with tert-butylaniline salt to passivate defects in the photosensitive layer and improve its optical and electrical properties. The tert-butylaniline salt is one of Tbbai (4-tert-butylaniline iodide), tBBABr (4-tert-butylaniline bromide), or tBBACl (4-tert-butylaniline chloride), with a concentration of 1-12 mg / mL, isopropanol as the solvent, treatment for 3-15 s, followed by annealing at 60-160 °C for 5-20 minutes.
[0022] The technical effects of this invention are:
[0023] The power conversion efficiency of laser cells has been improved, and the response range of laser cells has been broadened; the laser cells prepared based on the solution method have reduced the manufacturing cost of laser cells. Attached Figure Description
[0024] The accompanying drawings of this invention are described below:
[0025] Figure 1 This is a schematic diagram of the laser battery structure of the present invention;
[0026] Figure 2 The current density-voltage (JV) curve of the laser cell in Example 1 is shown.
[0027] Figure 3 This is a current density-voltage (JV) curve of the laser cell in Example 2;
[0028] Figure 4 This is a current density-voltage (JV) curve of the laser cell in Example 3;
[0029] Figure 5 This is a current density-voltage (JV) curve of the laser cell in Example 4;
[0030] Figure 6 This is a current density-voltage (JV) curve of the laser cell in Example 5.
[0031] In the figure, 1 is a transparent substrate; 2 is a transparent conductive electrode; 3 is a first carrier transport layer; 4 is a metal halide perovskite photosensitive layer; 5 is a second carrier transport layer; and 6 is a metal electrode. Detailed Implementation
[0032] The present invention will be further described below with reference to the accompanying drawings and embodiments:
[0033] To clearly describe the invention, this patent application uses the directional terms "upper" and "lower" for distinction. The terms "upper" and "lower" are determined based on the arrangement of the above figures. When the actual use direction of the invention changes, the terminology of the orientation will change accordingly, and this should not be regarded as a limitation on the scope of patent protection.
[0034] like Figure 1 As shown, the laser battery of the present invention includes, from bottom to top, a transparent substrate 1, a transparent conductive electrode 2, a first carrier transport layer 3, a metal halide perovskite photosensitive layer 4, a second carrier transport layer 5, and a metal electrode 6; the first carrier transport layer 3 and the second carrier transport layer 5 are electron transport layers or hole transport layers, and the carriers of the first carrier transport layer 3 and the second carrier transport layer 5 are different.
[0035] The transparent substrate 1 is one of rigid glass, flexible PET (polyethylene terephthalate), or flexible PEN (polyethylene terephthalate). The transparent substrate 1 and the transparent conductive electrode 2 are commercially available integrated products that can be purchased directly.
[0036] Example 1: Method for fabricating a laser cell with FAPbI3 (i.e., x and y are both 0, and a and b are both 0) as the photosensitive layer.
[0037] Step 1: Prepare a SnO2 thin film with a thickness of 30 nm on a clean transparent conductive electrode ITO, and anneal it at 150 °C for 30 minutes to obtain the first carrier transport layer 3, which is the electron transport layer.
[0038] Step 2: Spin-coat the metal halide perovskite precursor solution onto the first carrier transport layer 3, induce film formation using antisolvent, and then proceed with a gradient annealing crystallization process to obtain the metal halide perovskite photosensitive layer 4.
[0039] In this embodiment, FAPbI3 is used as the metal halide perovskite component, where FA is formamidinium, Pb is lead, and I is iodine. Specifically, a 1.6M (M = mol / L) FAPbI3 perovskite precursor solution is prepared under a nitrogen atmosphere according to the chemical composition and stoichiometric ratio. The solvents are N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) in a volume ratio of 4:1. 25 mol% (mol% refers to the molar percentage relative to FAPbI3; for example, 25 mol% of 1.6M is 0.4M) of methylamine chloride (MACl) is introduced into the precursor. After stirring at room temperature for 2 hours, the solution is filtered and set aside. In dry air, the FAPbI3 perovskite precursor solution is spin-coated onto the first carrier transport layer 3. Film formation is induced by the antisolvent chlorobenzene. The film is annealed at 55°C for 2 minutes, then at 150°C for 10 minutes to allow FAPbI3 to crystallize. After cooling, the FAPbI3 perovskite polycrystalline film was treated with a 6 mg / mL tBBAI isopropanol solution for 10 seconds, followed by annealing at 120 °C for 5 minutes to finally obtain the FAPbI3 photosensitive layer 4 with a thickness of 600 nm.
[0040] Step 3: On the FAPbI3 photosensitive layer 4, a spiro-OMeTAD thin film with a thickness of 400 nanometers is prepared by spin coating to obtain the second carrier transport layer 5, which is a hole transport layer.
[0041] Spiro-OMeTAD is 2,2′,7,7′-tetra(N,N-di-p-methoxyphenylamine))9,9′-spirodifluorene, a commercially available product.
[0042] Step 4: Vacuum thermally evaporate 80 nanometers of Au onto the second carrier transport layer 5 to obtain the metal electrode 6.
[0043] Laser battery performance test:
[0044] An 805nm steady-state laser was selected, and its power and the spot area incident on the laser cell were adjusted to achieve an incident power density of 50mW / cm². 2 Under these conditions, the current density-voltage (JV) characteristic curve of the laser cell was measured using a Keithley 2450 digital source meter.
[0045] like Figure 2 As shown, the laser battery with FAPbI3 as the photosensitive layer provided in this embodiment achieves a wavelength of 805 nm and an incident power density of 50 mW / cm². 2 The current density-voltage (JV) curve under laser irradiation shows that the measured short-circuit current density of the device is 31.51 mA / cm². 2 The open-circuit voltage is 1.068V, the fill factor is 66.069%, and the power conversion efficiency is 44.47%.
[0046] Power conversion efficiency = short-circuit current density × open-circuit voltage × fill factor ÷ incident power density.
[0047] Example 2: Method for fabricating a laser cell with MAPbBr3 (i.e., y and 1-xy are 0, and a and 1-ab are 0) as the photosensitive layer
[0048] Step 1: Prepare NiO on a clean, transparent conductive electrode ITO using a spin-coating method. x Thin film (NiO) x The mixture of NiO and Ni2O3 is 50 nanometers thick and annealed at 200°C for 45 minutes to obtain the first carrier transport layer 3, which is a hole transport layer.
[0049] Step 2: Spin-coat the metal halide perovskite precursor solution onto the first carrier transport layer 3, induce film formation using antisolvent, and then proceed with a gradient annealing crystallization process to obtain the metal halide perovskite photosensitive layer 4.
[0050] In this embodiment, MAPbBr3 is used as the perovskite component, where MA is methylamine, Pb is lead, and Br is bromine. Specifically, a 1.0 M MAPbBr3 perovskite precursor solution is prepared under a nitrogen atmosphere according to the chemical composition and stoichiometric ratio. The solvent is DMF:DMSO at a volume ratio of 4:1. After stirring at room temperature for 2 hours, the solution is filtered for later use. In dry air, the MAPbBr3 perovskite precursor solution is spin-coated onto the first carrier transport layer 3. Film formation is induced using the antisolvent chlorobenzene. The film is annealed at 70°C for 10 minutes, then at 120°C for 20 minutes to crystallize the perovskite. After cooling, the perovskite polycrystalline film is treated with an 8 mg / mL tBBABr isopropanol solution for 5 seconds, followed by annealing at 100°C for 10 minutes, finally obtaining a MAPbBr3 photosensitive layer 4 with a thickness of 300 nm.
[0051] Step 3: Prepare a 10 nm thick fullerene C on the MAPbBr3 photosensitive layer 4 by vapor deposition. 60 A thin film and a 5-nanometer-thick bathocuproine (BCP) layer were used to obtain the second carrier transport layer 5, which is an electron transport layer.
[0052] Step 4: Vacuum thermally deposit 120 nm of Cu on the second carrier transport layer 5 to obtain the metal electrode 6.
[0053] Laser battery performance test:
[0054] A 465nm laser with a frequency of 25MHz was selected, and its power and the spot area incident on the laser cell were adjusted to achieve an incident power density of 10W / cm².2 Under these conditions, the current density-voltage (JV) characteristic curve of the laser cell was measured using a Keithley 2450 digital source meter.
[0055] like Figure 3 As shown, the laser cell with MAPbBr3 as the photosensitive layer provided in this embodiment operates at a wavelength of 465 nm, a frequency of 25 MHz, and an incident power density of 10 W / cm². 2 The current density-voltage (JV) curve under laser irradiation shows that the measured short-circuit current density of the device is 1963.22 mA / cm². 2 The open-circuit voltage is 1.116V, the fill factor is 79.02%, and the power conversion efficiency is 17.3%.
[0056] Example 3: Preparation method of laser cell with CsPbCl3 (i.e., x and 1-xy are 0, and b and 1-ab are 0) as photosensitive layer
[0057] Step 1: Prepare a TiO2 thin film with a thickness of 200 nm on a clean transparent conductive electrode FTO, and anneal it at 450 °C for 60 minutes to obtain the first carrier transport layer 3, which is the electron transport layer.
[0058] Step 2: Spin-coat the metal halide perovskite precursor solution onto the first carrier transport layer 3, induce film formation using antisolvent, and then proceed with a gradient annealing crystallization process to obtain the metal halide perovskite photosensitive layer 4.
[0059] In this embodiment, CsPbCl3 is used as the perovskite component, where Cs is cesium, Pb is lead, and Cl is chlorine. Specifically, a 0.4 M CsPbCl3 perovskite precursor solution is prepared under a nitrogen atmosphere according to the chemical composition and its stoichiometric ratio. The solvent is 2-ME:DMF:DMSO (2-ME is 2-methoxyethanol), with a volume ratio of 5:4:1. 1 mol% (relative to the molar fraction of CsPbCl3) of hydrochloric acid is introduced into the precursor. After stirring at room temperature for 2 hours, the solution is filtered and set aside. In dry air, the CsPbCl3 perovskite precursor solution is spin-coated onto the first carrier transport layer 3. Film formation is induced using the antisolvent diethyl ether. The film is annealed at 80°C for 2 minutes, then at 200°C for 30 minutes to allow the perovskite to crystallize. After cooling, the perovskite polycrystalline film was treated with a 12 mg / mL tBBACl isopropanol solution on the CsPbCl3 film for 3 seconds, followed by annealing at 160 °C for 5 minutes, finally obtaining CsPbCl3 photosensitive layer 4 with a thickness of 100 nm.
[0060] Step 3: On the CsPbCl3 photosensitive layer 4, a PTAA film with a thickness of 80 nanometers is prepared by spin coating to obtain the second carrier transport layer 5, which is a hole transport layer.
[0061] PTAA is Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], a commercially available product.
[0062] Step 4: Vacuum thermally evaporate 50 nanometers of Au onto the second carrier transport layer 5 to obtain the metal electrode 6.
[0063] Laser battery performance test:
[0064] A 355nm laser was selected, and its frequency was adjusted to 1kHz. Simultaneously, its power and the spot size incident on the laser cell were adjusted to achieve an incident power density of 200mW / cm². 2 Under these conditions, the current density-voltage (JV) characteristic curve of the laser cell was measured using a Keithley 2450 digital source meter.
[0065] like Figure 4 As shown, the laser cell using CsPbCl3 perovskite as the photosensitive layer provided in this embodiment operates at a wavelength of 355 nm, a frequency of 1 kHz, and an incident power density of 200 mW / cm². 2 The current density-voltage (JV) curve under laser irradiation shows that the measured short-circuit current density of the device is 31.45 mA / cm². 2 The open-circuit voltage is 1.103V, the fill factor is 69.191%, and the power conversion efficiency is 12%.
[0066] The low power conversion efficiency is mainly related to the composition of the perovskite. In the perovskite field, the quality of CsPbCl3 (all-chlorinated perovskite) films is difficult to control. Compared with iodine or bromine perovskites, it is much worse, so the efficiency is relatively low.
[0067] Example 4, using Cs 0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 )3. Preparation method of laser cell with photosensitive layer
[0068] Step 1: On a clean, transparent conductive electrode ITO, a MeO-2PACz (i.e., [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid, commercially available product) thin film with a thickness of 5 nm is prepared by spin coating. The film is then annealed at 100 °C for 20 minutes to obtain the first carrier transport layer 3, which is a hole transport layer.
[0069] Step 2: Spin-coat the metal halide perovskite precursor solution onto the first carrier transport layer 3, induce film formation using antisolvent, and then proceed with a gradient annealing crystallization process to obtain the metal halide perovskite photosensitive layer 4.
[0070] In this embodiment, Cs is used 0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 )3 is used as a perovskite component, in which Cs is cesium, MA is methylamine, FA is formamidinium, Pb is lead, Br is bromine, and I is iodine. The specific method is as follows: 2.2M Cs is prepared under a nitrogen atmosphere according to the chemical composition and its stoichiometric ratio. 0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 3) A perovskite precursor solution was prepared using 2-ME as the solvent, and 2 mol% MACl was introduced into the precursor. The solution was stirred at 70°C for 2 hours and then filtered for later use. Cs was then spin-coated onto the first carrier transport layer 3 in dry air. 0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 3) A perovskite precursor solution was used to induce film formation using the antisolvent ethyl acetate. The film was annealed at 40°C for 20 seconds, followed by annealing at 100°C for 60 minutes to crystallize the perovskite. After cooling, it was subjected to Cs... 0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 )3. The perovskite polycrystalline film was treated with a 1 mg / mL tBBAI isopropanol solution for 3 seconds, followed by annealing at 60 °C for 5 minutes to finally obtain Cs 0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 )3 Photosensitive layer 4, with a thickness of 1500 nanometers.
[0071] A thickness of 1500 nanometers is actually the strongest light absorption, but the generated charge carriers are too far away from a certain transport layer and cannot be extracted to the electrode in time. They can only recombine and cannot form an effective current. Therefore, the short-circuit current density of the battery will be low in the end.
[0072] Step 3, in Cs0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 A ZnO thin film with a thickness of 40 nanometers was prepared on the photosensitive layer 4 by spin coating, and the second carrier transport layer 5 was obtained as the electron transport layer.
[0073] Step 4: Vacuum thermally deposit 0.6 nm of LiF and 400 nm of Al on the second carrier transport layer 5 to obtain the metal electrode 6.
[0074] Laser battery performance test:
[0075] A 662nm laser was selected, its frequency was adjusted to 100Hz, and its power and the spot area incident on the laser cell were also adjusted to achieve an incident power density of 10mW / cm². 2 Under these conditions, the current density-voltage (JV) characteristic curve of the laser cell was measured using a Keithley 2450 digital source meter.
[0076] like Figure 5 As shown, this embodiment provides the use of Cs 0.05 MA 0.1 FA 0.85 Pb(Cl 0.02 Br 0.08 I 0.9 )3. A laser cell with perovskite as the photosensitive layer at a wavelength of 662nm, a frequency of 100Hz, and an incident power density of 10mW / cm² 2 The current density-voltage (JV) curve under laser irradiation shows that the measured short-circuit current density of the device is 9.27 mA / cm². 2 The open-circuit voltage is 1.034V, the fill factor is 60.01%, and the power conversion efficiency is 57.5%.
[0077] Example 5: Using CsPbBr 0.5 I 2.5 Method for fabricating a laser cell with a photosensitive layer (i.e., x and 1-xy are both 0, and a is 0) as the photosensitive layer.
[0078] Step 1: On a clean, transparent conductive electrode FTO, a 100-nanometer-thick Nb2O5 thin film is prepared by magnetron sputtering without annealing to obtain the first carrier transport layer 3, which is the electron transport layer.
[0079] Step 2: Spin-coat the metal halide perovskite precursor solution onto the first carrier transport layer 3, induce film formation using antisolvent, and then proceed with a gradient annealing crystallization process to obtain the metal halide perovskite photosensitive layer 4.
[0080] In this embodiment, CsPbBr is used. 0.5 I 2.5 As a perovskite component, Cs represents cesium, Pb represents lead, Br represents bromine, and I represents iodine. The specific method is as follows: 0.6 M of CsPbBr is prepared under a nitrogen atmosphere according to the chemical composition and its stoichiometric ratio. 0.5 I 2.5 A perovskite precursor solution was prepared using 2-ME:DMSO in a volume ratio of 8:1, with 5 mol% CsCl introduced into the precursor. After stirring at room temperature for 2 hours, the solution was filtered for later use. CsPbBr was then spin-coated onto the first carrier transport layer 3 in dry air. 0.5 I 2.5 A perovskite precursor solution was used to induce film formation using toluene as an antisolvent. The film was annealed at 80°C for 5 minutes, followed by annealing at 250°C for 30 minutes to crystallize the perovskite. After cooling, it was then subjected to CsPbBr... 0.5 I 2.5 The perovskite polycrystalline film was treated with a 10 mg / mL tBBACl isopropanol solution for 15 seconds, followed by annealing at 100 °C for 20 minutes to finally obtain CsPbBr. 0.5 I 2.5 Photosensitive layer 4 has a thickness of 180 nanometers.
[0081] Step 3, in CsPbBr 0.5 I 2.5 A V2O5 thin film with a thickness of 40 nanometers was prepared on the photosensitive layer 4 by spin coating, resulting in the second carrier transport layer 5, which is a hole transport layer.
[0082] Step 4: Vacuum thermally deposit 10 nm of MoO3 and 200 nm of Ag on the second carrier transport layer 5 to obtain the metal electrode 6.
[0083] Laser battery performance test:
[0084] A 520nm laser with a frequency of 100kHz was selected, and its power and the spot size incident on the laser cell were adjusted to achieve an incident power density of 100mW / cm². 2 Under these conditions, the current density-voltage (JV) characteristic curve of the laser cell was measured using a Keithley 2450 digital source meter.
[0085] like Figure 6 As shown, this embodiment provides the use of CsPbBr 0.5 I 2.5 A laser cell using perovskite as the photosensitive layer operates at a wavelength of 520 nm, a frequency of 100 kHz, and an incident power density of 100 mW / cm². 2 The current density-voltage (JV) curve under steady-state laser irradiation shows that the measured short-circuit current density of the device is 31.98 mA / cm².2 The open-circuit voltage is 1.101V, the fill factor is 72.388%, and the power conversion efficiency is 25.49%.
[0086] Since metal halide perovskites have a higher absorption coefficient near their bandgap than silicon and GaAs photosensitive layers, they are highly advantageous for laser cells. They allow for the selection of laser wavelengths closer to the bandgap, further reducing thermal losses without sacrificing light absorption, thus improving power conversion efficiency. In addition, the continuously tunable bandgap of perovskites (1.2–2.9 eV) allows laser cells to operate at different laser wavelengths, greatly expanding the application range of laser cells. Furthermore, the solution-based fabrication process reduces the cost of manufacturing laser cells.
Claims
1. A laser battery, comprising, from bottom to top, a transparent substrate (1), a transparent conductive electrode (2), a first carrier transport layer (3), a metal halide perovskite photosensitive layer (4), a second carrier transport layer (5), and a metal electrode (6); wherein the first carrier transport layer (3) and the second carrier transport layer (5) are electron transport layers or hole transport layers, and the carriers of the first carrier transport layer (3) and the second carrier transport layer (5) are different; characterized in that: The metal halide perovskite photosensitive layer (4) has a perovskite structure and the chemical formula MA. x Cs y FA 1-x-y Pb(Cl a Br b I 1-a-b The polycrystalline thin film is 3, where MA, Cs, and FA correspond to methylamine, cesium, and formamidinium, respectively; Pb is lead; Cl, Br, and I correspond to chlorine, bromine, and iodine, respectively; and 0≤x, y, 1-xy≤1, 0≤a, b, 1-ab≤1, and the thickness of the polycrystalline thin film is 100-1500 nanometers.
2. The laser battery according to claim 1, characterized in that: The transparent substrate (1) is one of rigid glass, flexible PET or flexible PEN.
3. The laser cell of claim 2, wherein: The transparent conductive electrode is either an ITO or an FTO thin film.
4. The laser cell of claim 3, wherein: The electron transport layer is SnO2, TiO2, ZnO, Nb2O5, C 60 Or one of the BCP films, with a thickness of 10–200 nanometers; The hole transport layer is one of spiro-OMeTAD, PTAA, MeO-2PACz, NiO x or V2O5 thin film, thickness of 5-400 nanometers.
5. The laser cell of claim 4, wherein: The metal electrode (6) is one of Ag, Al, Cu or Au, and has a thickness of 50 to 400 nanometers.
6. A method of fabricating a laser cell, characterized by, Includes the following steps: Step 1: Prepare the first carrier transport layer (3) on the transparent conductive electrode (2); Step 2: Spin-coat a metal halide perovskite precursor solution onto the first carrier transport layer (3), induce film formation using antisolvent, and then undergo gradient annealing crystallization process to obtain a metal halide perovskite photosensitive layer (4) with a thickness of 100-1500 nanometers. The metal halide perovskite described has a perovskite structure and the chemical formula MA. x Cs y FA 1-x-y Pb(Cl a Br b I 1-a-b )3, where MA, Cs, and FA correspond to methylamine, cesium, and formamidinium, respectively; Pb is lead; Cl, Br, and I correspond to chlorine, bromine, and iodine, respectively; and 0 ≤ x, y, 1-xy ≤ 1, 0 ≤ a, b, 1-ab ≤ 1; Step 3: Prepare a second carrier transport layer (5) on the metal halide perovskite photosensitive layer (4); Step 4: Deposit metal onto the second carrier transport layer (5) to obtain a metal electrode (6).
7. The method of claim 6, wherein the laser cell is prepared by: The process also includes step 5: irradiating the laser cell with a laser, reading the current density-voltage (JV) characteristic curve of the laser cell using a digital source meter, and obtaining its output performance; the laser wavelength is selected from 355 to 805 nm, the laser frequency is from steady state to 25 MHz, and its power density is 0.01 to 10 W / cm². 2 .
8. The method of claim 6 or 7, wherein the laser cell is prepared by the steps of: In step 2, the gradient annealing crystallization process of metal halide perovskite is as follows: first, heating at a low temperature of 40-80℃ for 20-600 seconds, followed by increasing the temperature to 100-250℃ and heating for 5-60 minutes. 9. The method of claim 8, wherein the laser cell is prepared by the steps of: In step 2, after gradient annealing and crystallization of the metal halide perovskite, it is treated with tert-butyl aniline salt, which is one of tBBAI, tBBABr or tBBACl, with a concentration of 1-12 mg / mL, isopropanol as the solvent, for 3-15 s, followed by annealing at a temperature of 60-160 °C for 5-20 minutes.