Use of valinomycin, perovskite solar cell and method for preparing the same

Abstract

The application discloses application of valinomycin, a perovskite solar cell and a preparation method thereof, and belongs to the technical field of perovskite solar cells, and overcomes the defects that a passivation material has poor passivation durability and poor conversion efficiency improvement effect on a perovskite solar cell in the prior art. The application discloses application of valinomycin in passivation of a perovskite active layer of a perovskite solar cell. The application can obtain a high-efficiency and stable perovskite solar cell.

Description

Technical Field

[0001] This invention belongs to the field of perovskite solar cell technology, specifically relating to the application of valinemycin, perovskite solar cells and their preparation methods. Background Technology

[0002] To address energy challenges, developing new, highly efficient, and low-cost solar cells is an environmentally friendly, feasible, and effective solution. Perovskite solar cells, due to their high energy conversion efficiency and rapid development, have demonstrated enormous potential in the photovoltaic field.

[0003] Numerous recombination processes occur in perovskite solar cells, including radiative and non-radiative recombination. Non-radiative recombination includes Auger recombination, defect-assisted recombination, electron-phonon interactions, and carrier-carrier scattering, among which defect-assisted recombination is the dominant recombination loss mechanism. Defect-assisted recombination can be suppressed through appropriate defect passivation. Therefore, researchers have focused on minimizing non-radiative recombination losses by improving perovskite film quality, reducing grain boundaries, and passivating defects on the perovskite film surface or in the bulk.

[0004] Due to the high-temperature annealing and rapid crystallization processes involved in the fabrication of perovskite solar cells, and the volatile nature of the organic components in the perovskite active layer, the defects in the perovskite active layer of perovskite solar cells are mainly concentrated at the upper interface. Most existing upper interface passivation layer materials contain only a single functional group, and the passivation layer materials themselves have poor stability, resulting in poor efficiency improvement of perovskite solar cells and an inability to provide effective and long-term passivation. Summary of the Invention

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the defects of the existing technology, such as poor effect of passivation materials on improving the conversion efficiency of perovskite solar cells and poor passivation durability, thereby providing the application of valinemycin, perovskite solar cells and their preparation methods.

[0006] To this end, the present invention provides the following technical solution.

[0007] In a first aspect, this invention discloses the application of valinemycin in the passivation of the perovskite active layer of perovskite solar cells. For example, the application of valinemycin in the interface passivation of the perovskite active layer.

[0008] Secondly, the present invention discloses a perovskite solar cell, comprising a conductive substrate, an anode transport layer, a perovskite active layer, a passivation layer, a cathode transport layer and a metal electrode arranged sequentially, wherein the passivation layer material is valinemycin.

[0009] Furthermore, at least one of the following conditions must be met:

[0010] (1) The conductive substrate includes a substrate and a conductive layer; preferably, the conductive layer is ITO or FTO;

[0011] (2) The perovskite active layer material is ABX3; wherein, A is CH3NH3. + HC(NH2)2 + CH3(CH2) n ·NH3 + C6H5(CH2) m ·NH3 + Cs + 、Rb + One or more of the following, where n and m are integers from 1 to 3; B is Pb 2+ Sn 2+ Cu 2+ One or more of them, where X is I - ,Br - Cl - One or more of the following;

[0012] (3) The cathode transport layer material includes C 60 And at least one of BCP, preferably, the cathode transport layer comprises a C layer with a thickness of 25-30 nm. 60 And a BCP with a thickness of 6-8 nm; the BCP is 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline;

[0013] (4) The thickness of the metal electrode is 80-100 nm;

[0014] (5) The metal electrode is made of at least one of silver, gold, and copper.

[0015] Thirdly, this invention discloses a method for preparing a perovskite solar cell, comprising the following steps:

[0016] Step 1: Prepare an anode transport layer on a conductive substrate;

[0017] Step 2: Prepare a perovskite active layer on the anode transport layer;

[0018] Step 3: Prepare a passivation layer on the perovskite active layer;

[0019] Step 4: Prepare a cathode transport layer on the passivation layer;

[0020] Step 5: Fabricate a metal electrode on the cathode transport layer.

[0021] Furthermore, at least one of the following conditions must be met:

[0022] (1) Step 1 includes: coating the anodic transport layer solution onto a conductive substrate, annealing, and obtaining the anodic transport layer;

[0023] (2) Step 2 includes: spin-coating the perovskite precursor solution onto the anode transport layer, annealing, and obtaining the perovskite active layer;

[0024] (3) Step 3 includes: coating the perovskite active layer with a valine solution and annealing it to obtain a passivation layer.

[0025] (4) Step 4 includes: depositing the cathode transport layer material onto the passivation layer by vacuum evaporation to obtain the cathode transport layer;

[0026] (5) Step 5 includes: preparing a metal electrode on the cathode transport layer by thermal evaporation.

[0027] Furthermore, in step 3, the concentration of the valproic acid solution is 0.05–1.5 mg / ml, preferably 0.1–1 mg / ml.

[0028] Furthermore, in step 3, the annealing conditions are annealing at 90–120°C for 5–10 minutes;

[0029] Furthermore, in step 1, the anolyte transport layer solution is an ethanol solution of MeO-2PACz; MeO-2PACz is [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid.

[0030] Preferably, the annealing conditions in step 1 are annealing at 90–120°C for 10–20 min.

[0031] Furthermore, step 2 also includes adding an antisolvent during the spin-coating process of the perovskite precursor solution;

[0032] Furthermore, the antisolvent is at least one of chlorobenzene and ethyl acetate, preferably chlorobenzene;

[0033] Preferably, the antisolvent is added dropwise during the spin-coating process of the perovskite precursor solution at the 20th to 30th second.

[0034] Preferably, the annealing conditions in step 2 are annealing at 90–150°C for 20–30 minutes.

[0035] The anolyte transport layer solution is an ethanol solution of MeO-2PACz.

[0036] The technical solution of this invention has the following advantages:

[0037] 1. This invention discloses the application of valamicin in the passivation of the perovskite active layer of perovskite solar cells. Valamicin, as a passivation material, possesses abundant functional groups. Valamicin can passivate positively charged defects through coordination with uncoordinated B-site metal cations in the perovskite active layer via polydentate ligands (-C=O and -O-). The -NH- in valamicin can form hydrogen bonds with halide anions to passivate negatively charged defects. Valamicin can simultaneously passivate two different types of charge defects, achieving a better passivation effect. Furthermore, the valamicin molecule has a cyclic structure, and two or more valamicin molecules can spontaneously form complex, organized aggregates through hydrogen bond interactions, i.e., forming supramolecular materials, which is more conducive to intermolecular stacking and thus facilitates charge transport. Moreover, valamicin can form intermolecular hydrogen bonds, exhibiting good chemical stability, which can improve the durability of the passivation effect. This simultaneously increases the open-circuit voltage and fill factor of the perovskite solar cell, resulting in a highly efficient and stable perovskite solar cell.

[0038] Experimental results show that by selecting valine as the passivation layer material for the perovskite layer, this invention can passivate defects in the perovskite active layer and reduce non-radiative recombination of the perovskite layer; it can also improve the durability of the passivation effect, thereby improving the efficiency and stability of perovskite solar cells.

[0039] 2. Step 3 of the method for preparing the perovskite solar cell provided by the present invention includes: coating the perovskite active layer with a 0.1-1 mg / ml valinomycin solution to obtain a passivation layer. Perovskite solar cells prepared with valinomycin solution within this concentration range show a higher improvement in conversion efficiency. Attached Figure Description

[0040] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0041] Figure 1 The diagram shows the device structure of the perovskite solar cell provided in Embodiments 1-7 of the present invention.

[0042] Figure 2 Comparative Example 1, with a strength of 100 mW / cm 2 Current density versus voltage (JV) curves under illumination;

[0043] Figure 3 Comparative Example 2, with a strength of 100 mW / cm 2 Current density versus voltage (JV) curves under illumination;

[0044] Figure 4 Example 1 is based on a strength of 100 mW / cm. 2 Current density versus voltage (JV) curves under illumination;

[0045] Figure 5 Example 2 is based on a strength of 100 mW / cm. 2 Current density versus voltage (JV) curves under illumination;

[0046] Figure 6 Example 3 was performed at a strength of 100 mW / cm. 2 Current density versus voltage (JV) curves under illumination;

[0047] Figure 7 Example 4 shows a strength of 100 mW / cm 2 Current density versus voltage (JV) curves under illumination;

[0048] Figure 8 Example 5 shows a strength of 100 mW / cm. 2 Current density versus voltage (JV) curves under illumination;

[0049] Figure 9 Example 6 was performed at a strength of 100 mW / cm. 2 Current density versus voltage (JV) curves under illumination;

[0050] Figure 10 Example 7 was performed at a strength of 100 mW / cm. 2 Current density versus voltage (JV) curves under illumination;

[0051] Figure 11 Storage stability test curves of perovskite solar cells prepared in Example 2 and Comparative Example 1 in air atmosphere.

[0052] Figure label:

[0053] 1-Substrate; 2-Conductive layer; 3-Anode transport layer; 4-Perovskite active layer; 5-Passivation layer; 6-Cathode transport layer; 7-Metal electrode; 8-Incident light. Detailed Implementation

[0054] The following embodiments are provided to better understand the present invention and are not limited to the preferred embodiments described. They do not constitute a limitation on the content and scope of protection of the present invention. Any product that is the same as or similar to the present invention, derived by any person under the guidance of the present invention or by combining the features of the present invention with other prior art, falls within the protection scope of the present invention.

[0055] For experiments not specifically described in the examples, the procedures or conditions should be followed according to the conventional experimental procedures described in the literature in this field. Reagents or instruments whose manufacturers are not specified are all commercially available conventional reagent products.

[0056] Example 1

[0057] This embodiment provides a method for fabricating a perovskite solar cell, including the following steps:

[0058] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0059] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0060] 3. Deposition of the perovskite active layer on the anolyte transport layer using a one-step method: First, 60 μL of a perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, and 656.9 mg PbI2 dissolved in a mixed solution of 200 μL DMSO and 800 μL DMMF, with a volume ratio of 1:4) was spin-coated onto the anolyte transport layer at 3000 rpm. At the 25th second of the spin-coating process, 150 μL of the antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 100 °C for 20 minutes to obtain the perovskite active layer.

[0061] 4. A passivation layer solution, consisting of 0.1 mg / ml valproic acid solution and isopropanol (IPA), is spin-coated onto the perovskite active layer at a speed of 3000 rpm. The passivation layer is then annealed at 100°C for 5 min to obtain the passivation layer.

[0062] 5. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is performed on the prepared passivation layer to deposit a 30nm layer of C. 60 A cathode transport layer was fabricated using an 8nm BCP.

[0063] 6. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0064] Example 2

[0065] This embodiment provides a method for fabricating a perovskite solar cell, including the following steps:

[0066] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0067] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0068] 3. Deposition of perovskite active layer on anolyte transport layer in one step: First, 60 μL of perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, 656.9 mg PbI2 dissolved in a mixed solution of 200 μL LDMSO + 800 μL LDMMF) was spin-coated onto anolyte transport layer at 3000 rpm. At the 25th second of spin-coating, 150 μL of antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 100 °C for 20 minutes to obtain perovskite active layer.

[0069] 4. A passivation layer solution, consisting of 0.5 mg / ml valproic acid solution and isopropanol (IPA), is spin-coated onto the perovskite active layer at 3000 rpm. The passivation layer is then annealed at 100°C for 5 min to obtain the passivation layer.

[0070] 5. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is performed on the prepared passivation layer to deposit a 30nm layer of C. 60 A cathode transport layer was fabricated using an 8nm BCP.

[0071] 6. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0072] Example 3

[0073] This embodiment provides a method for fabricating a perovskite solar cell, including the following steps:

[0074] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0075] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0076] 3. Deposition of perovskite active layer on anolyte transport layer in one step: First, 60 μL of perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, 656.9 mg PbI2 dissolved in a mixed solution of 200 μL LDMSO + 800 μL LDMMF) was spin-coated onto anolyte transport layer at 3000 rpm. At the 25th second of spin-coating, 150 μL of antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 100 °C for 20 minutes to obtain perovskite active layer.

[0077] 4. A passivation layer solution, consisting of 1 mg / ml valproic acid solution and isopropanol (IPA), is spin-coated onto the perovskite active layer at a speed of 3000 rpm. The passivation layer is then annealed at 100°C for 5 min to obtain the passivation layer.

[0078] 5. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is performed on the prepared passivation layer to deposit a 30nm layer of C. 60 A cathode transport layer was fabricated using an 8nm BCP.

[0079] 6. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0080] Example 4

[0081] This embodiment provides a method for fabricating a perovskite solar cell, including the following steps:

[0082] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0083] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0084] 3. Deposition of perovskite active layer on anolyte transport layer in one step: First, 60 μL of perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, 656.9 mg PbI2 dissolved in a mixed solution of 200 μL LDMSO + 800 μL LDMMF) was spin-coated onto anolyte transport layer at 3000 rpm. At the 25th second of spin-coating, 150 μL of antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 100 °C for 20 minutes to obtain perovskite active layer.

[0085] 4. A passivation layer solution, consisting of 0.05 mg / ml valproic acid solution and isopropanol (IPA), is spin-coated onto the perovskite active layer at 3000 rpm. The passivation layer is then annealed at 100°C for 5 min to obtain the passivation layer.

[0086] 5. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is performed on the prepared passivation layer to deposit a 30nm layer of C. 60 A cathode transport layer was fabricated using an 8nm BCP.

[0087] 6. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0088] Example 5

[0089] This embodiment provides a method for fabricating a perovskite solar cell, including the following steps:

[0090] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0091] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0092] 3. Deposition of perovskite active layer on anolyte transport layer in one step: First, 60 μL of perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, 656.9 mg PbI2 dissolved in a mixed solution of 200 μL LDMSO + 800 μL LDMMF) was spin-coated onto anolyte transport layer at 3000 rpm. At the 25th second of spin-coating, 150 μL of antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 100 °C for 20 minutes to obtain perovskite active layer.

[0093] 4. A passivation layer solution, consisting of 1.5 mg / ml valproic acid solution and isopropanol (IPA), is spin-coated onto the perovskite active layer at a speed of 3000 rpm. The passivation layer is then annealed at 100°C for 5 min to obtain the passivation layer.

[0094] 5. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is performed on the prepared passivation layer to deposit a 30nm layer of C. 60 A cathode transport layer was fabricated using an 8nm BCP.

[0095] 6. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0096] Example 6

[0097] This embodiment provides a method for fabricating a perovskite solar cell, including the following steps:

[0098] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0099] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0100] 3. Deposition of perovskite active layer on anolyte transport layer in one step: First, 60 μL of perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, 656.9 mg PbI2 dissolved in a mixed solution of 200 μL LDMSO + 800 μL LDMMF) was spin-coated onto anolyte transport layer at 3000 rpm. At the 25th second of spin-coating, 150 μL of antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 100 °C for 30 minutes to obtain perovskite active layer.

[0101] 4. A passivation layer solution, consisting of 0.5 mg / ml valproic acid solution and isopropanol (IPA), is spin-coated onto the perovskite active layer at 3000 rpm. The passivation layer is then annealed at 100°C for 5 min to obtain the passivation layer.

[0102] 5. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is performed on the prepared passivation layer to deposit a 30nm layer of C. 60 A cathode transport layer was fabricated using an 8nm BCP.

[0103] 6. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0104] Example 7

[0105] This embodiment provides a method for fabricating a perovskite solar cell, including the following steps:

[0106] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0107] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0108] 3. Deposition of perovskite active layer on anolyte transport layer in one step: First, 60 μL of perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, 656.9 mg PbI2 dissolved in a mixed solution of 200 μL LDMSO + 800 μL LDMMF) was spin-coated onto anolyte transport layer at 3000 rpm. At the 25th second of spin-coating, 150 μL of antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 90 °C for 20 minutes to obtain perovskite active layer.

[0109] 4. A passivation layer solution, consisting of 0.5 mg / ml valproic acid solution and isopropanol (IPA), is spin-coated onto the perovskite active layer at 3000 rpm. The passivation layer is then annealed at 100°C for 5 min to obtain the passivation layer.

[0110] 5. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is performed on the prepared passivation layer to deposit a 30nm layer of C. 60 A cathode transport layer was fabricated using an 8nm BCP.

[0111] 6. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0112] Comparative Example 1

[0113] This comparative example provides a method for preparing a perovskite solar cell, including the following steps:

[0114] 1. Cleaning of ITO glass substrate: Clean the ITO glass substrate with detergent, water, deionized water, acetone and isopropanol respectively by ultrasonic cleaning for 15 minutes each. Dry the cleaned ITO glass substrate in an oven at 150℃ for 5 minutes, and then treat it with ultraviolet ozone (UVO) for 15 minutes.

[0115] 2. Preparation of an anode transport layer on an ITO glass substrate: An ethanol solution of MeO-2PACz was spin-coated onto an ITO glass substrate at a speed of 3000 rpm, and then placed on a hot plate and annealed at 100°C for 10 minutes to prepare the anode transport layer.

[0116] 3. Deposition of the perovskite active layer on the anolyte transport layer using a one-step method: First, 60 μL of a perovskite precursor solution (19.5 mg CsI, 219.5 mg FAI, 27.5 mg PbBr2, 15.9 mg RbI, 8.4 mg MABr, and 656.9 mg PbI2 dissolved in a mixed solution of 200 μL LDMSO and 800 μL LDMMF) was spin-coated onto the anolyte transport layer at 3000 rpm. At the 25th second of the spin-coating process, 150 μL of the antisolvent chlorobenzene was added dropwise, and spin-coating continued for another 15 seconds. Then, the mixture was annealed at 100 °C for 20 minutes to obtain the perovskite active layer.

[0117] 4. Deposit the cathode transport layer using vacuum evaporation: Vacuum evaporation is used to deposit a 30nm layer of C onto the prepared perovskite active layer. 60 A cathode transport layer was prepared using an 8nm BCP.

[0118] 5. An Ag electrode with a thickness of 100 nm was prepared by thermal evaporation to obtain a perovskite solar cell.

[0119] Comparative Example 2

[0120] This comparative example is basically the same as Example 7, except that no passivation layer is provided.

[0121] The perovskite solar cell structures prepared in Examples 1-7 are as follows: Figure 1 As shown, it includes a substrate 1, a conductive layer 2, an anode transport layer 3, a perovskite active layer 4, a passivation layer 5, a cathode transport layer 6, and a metal electrode 7 arranged sequentially.

[0122] Test case

[0123] (1) The photoelectric performance of the perovskite solar cells prepared in Examples 1-7 and Comparative Examples 1 and 2 was tested. - The V-curve was obtained using a solar simulator (SS-F5-3A, EnliTech) at 100mW / cm. -2 The test was conducted under AM 1.5G irradiation, and the incident direction of incident light 8 during the test was as follows: Figure 1 As shown, the test results are as follows: Figures 2-10 As shown in Table 1.

[0124] Table 1 shows the performance of perovskite solar cells obtained from the examples and comparative examples.

[0125]

[0126]

[0127] In Table 1, V OC - Open circuit voltage, FF - Fill factor, PCE - Conversion efficiency.

[0128] As shown in Table 1, the conversion efficiency of the perovskite solar cells of the present invention is significantly improved compared with the comparative examples. The perovskite solar cells obtained by preparing the passivation layer with 0.1-1 mg / ml valamicin solution show an even greater improvement in conversion efficiency.

[0129] (2) Storage stability of the unencapsulated perovskite solar cells prepared in Example 2 and Comparative Example 1 in air atmosphere was tested at room temperature and 25±5% humidity. The test results are as follows: Figure 11 As shown.

[0130] Depend on Figure 11 It can be seen that after 1000 hours of storage, the efficiency of Comparative Example 1 decreased to about 40% of the original efficiency, while Example 2 still maintained about 90% of the initial efficiency. The perovskite solar cell prepared by this invention has significantly improved stability.

[0131] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. Application of valinemycin in the perovskite active layer interface passivation layer material of perovskite solar cells.

2. A perovskite solar cell, characterized in that, It includes a conductive substrate, an anode transport layer, a perovskite active layer, a passivation layer, a cathode transport layer, and a metal electrode arranged sequentially, wherein the passivation layer material is valinemycin.

3. The perovskite solar cell according to claim 2, characterized in that, The conductive substrate includes a substrate and a conductive layer.

4. The perovskite solar cell according to claim 3, characterized in that, The conductive layer is ITO or FTO.

5. The perovskite solar cell according to claim 2, characterized in that, The perovskite active layer material is ABX3; Where A is CH3NH3 + HC(NH2)2 + CH3(CH2) n ·NH3 + C6H5(CH2) m ·NH3 + Cs + 、Rb + One or more of the following, where n and m are integers from 1 to 3; B is Pb 2+ Sn 2+ Cu 2+ One or more of them, where X is I - ,Br - Cl - One or more of them.

6. The perovskite solar cell according to claim 2, characterized in that, The cathode transport layer material includes C. 60 and at least one of BCP.

7. The perovskite solar cell according to claim 6, characterized in that, The cathode transport layer comprises a C layer with a thickness of 25-30 nm. 60 And BCP with a thickness of 6~8 nm.

8. The perovskite solar cell according to claim 2, characterized in that, The thickness of the metal electrode is 80~100nm; And / or, the metal electrode is made of at least one of silver, gold, and copper.

9. A method for preparing a perovskite solar cell according to any one of claims 2-8, characterized in that, Includes the following steps: Step 1: Prepare an anode transport layer on a conductive substrate; Step 2: Prepare a perovskite active layer on the anode transport layer; Step 3: Prepare a passivation layer on the perovskite active layer; Step 4: Prepare a cathode transport layer on the passivation layer; Step 5: Fabricate a metal electrode on the cathode transport layer.

10. The method for preparing a perovskite solar cell according to claim 9, characterized in that, Step 1 includes: coating the anodic transport layer solution onto a conductive substrate, annealing, and obtaining the anodic transport layer.

11. The method for preparing a perovskite solar cell according to claim 10, characterized in that, In step 1, the anolyte transport layer solution is an ethanol solution of MeO-2PACz.

12. The method for preparing a perovskite solar cell according to claim 10, characterized in that, The annealing conditions in step 1 are annealing at 90~120℃ for 10~20 minutes.

13. The method for preparing a perovskite solar cell according to claim 9, characterized in that, Step 2 includes: spin-coating the perovskite precursor solution onto the anode transport layer, annealing, and obtaining the perovskite active layer.

14. The method for preparing a perovskite solar cell according to claim 13, characterized in that, Step 2 also includes adding an anti-solvent during the spin coating process of the perovskite precursor solution.

15. The method for preparing a perovskite solar cell according to claim 14, characterized in that, The antisolvent is at least one of chlorobenzene and ethyl acetate.

16. The method for preparing a perovskite solar cell according to claim 15, characterized in that, The antisolvent is chlorobenzene.

17. The method for preparing a perovskite solar cell according to claim 14, characterized in that, The antisolvent is added dropwise during the spin-coating process of the perovskite precursor solution at 20-30 seconds.

18. The method for preparing a perovskite solar cell according to claim 13, characterized in that, The annealing conditions in step 2 are annealing at 90~150 ℃ for 20~30 minutes.

19. The method for preparing a perovskite solar cell according to claim 9, characterized in that, Step 3 includes: coating the perovskite active layer with a valine solution, annealing it, and obtaining a passivation layer.

20. The method for preparing a perovskite solar cell according to claim 19, characterized in that, In step 3, the concentration of the valproic acid solution is 0.05~1.5 mg / ml.

21. The method for preparing a perovskite solar cell according to claim 20, characterized in that, In step 3, the concentration of the valproic acid solution is 0.1~1 mg / ml.

22. The method for preparing a perovskite solar cell according to claim 19, characterized in that, In step 3, the annealing conditions are annealing at 90~120℃ for 5~10 min.

23. The method for preparing a perovskite solar cell according to claim 9, characterized in that, Step 4 includes: depositing the cathode transport layer material onto the passivation layer using vacuum evaporation to obtain the cathode transport layer.

24. The method for preparing a perovskite solar cell according to claim 9, characterized in that, Step 5 includes: preparing a metal electrode on the cathode transport layer using a thermal evaporation method.

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