Two-photon writing power compensation template construction method and writing power adjustment method

Abstract

The present application relates to a two-photon writing power compensation template construction method and a writing power adjustment method, comprising: irradiating a laser with a set power P0 to a photoresist to generate an Airy disk in a standard direct writing field of view, obtaining the length l of the Airy disk to determine the etching depth b0 of the photoresist in the standard direct writing field of view; determining the etching volume V0 of the corresponding photoresist in the standard direct writing field of view based on b0; obtaining the standard fluorescence intensity F0 emitted by the photoresist with an etching volume V0 in the standard direct writing field of view; determining Ω based on F0=ΩV0, Ω being the fluorescence intensity emitted by unit volume of photoresist; segmenting the sample direct writing field of view to obtain at least two sample field of view partitions, obtaining the area S of the nth sample field of view partition n , the laser set power P n , and the actual fluorescence intensity F n '; determining the actual writing power P n ' of the nth sample field of view partition based on Ω, S n , and F n '; determining the compensation coefficient Ψ n of the nth sample field of view partition based on P n ' and P n '; constructing a writing power compensation template based on the compensation coefficients of all sample field of view partitions.

Description

Technical Field

[0001] This invention relates to the field of laser direct writing, and in particular to a method for constructing a two-photon writing power compensation template and a method for adjusting the writing power. Background Technology

[0002] Laser direct writing technology is a flexible photolithography technique that uses digital masking to directly expose photoresist on a substrate material and obtain the desired pattern through development. It has advantages such as high resolution and large processing area, and is therefore widely used in the field of micro and nano fabrication.

[0003] Due to aberrations in optical components, uneven transmittance (or reflectance), and assembly errors in mechanical components, direct-write processes exhibit uneven field of view and poor processing quality. One specific manifestation of this is the difference between the laser's output power and the actual lithography power received at the lithography location. This leads to a significant discrepancy between the actual lithography effect and the expected result, thus affecting the lithography quality. Summary of the Invention

[0004] Therefore, it is necessary to provide a two-photon writing power compensation template construction method and a writing power adjustment method to address the problem of poor photolithography quality.

[0005] A two-photon writing power compensation template construction method includes:

[0006] Obtain the beam waist radius w0 of the laser;

[0007] Obtain the current set power P0 and wavelength λ0 of the laser, and determine the current exposure depth b0 of the photoresist in the standard direct-write field of view based at least on λ0, w0 and P0;

[0008] Based on b0, determine the current exposure volume V0 of the photoresist in the standard direct-write field of view;

[0009] Obtain the standard fluorescence intensity F0 emitted by the photoresist with a current exposure volume of V0 in the standard direct-write field of view;

[0010] Ω is determined based on F0 = ΩV0, where Ω is the fluorescence intensity emitted per unit volume of photoresist;

[0011] The sample direct-write field of view is segmented to obtain at least two sample field of view partitions, and the area S of the nth sample field of view partition is obtained. n Laser setting power P n Laser wavelength λ n And the actual fluorescence intensity is F n ';

[0012] At least based on Ω, S n , λ n and F n'Determine the actual writing power P of the nth sample field of view partition n ';

[0013] Based on P n 'and P n Determine the compensation coefficient Ψ for the nth sample field of view partition. n ;

[0014] A writing power compensation template is constructed based on the compensation coefficients of all sample field-of-view partitions.

[0015] Each of the sample field-of-view partitions is a single pixel.

[0016] The standard fluorescence intensity F0 of this invention is the average fluorescence intensity of a single pixel in the standard direct-write field of view, or the fluorescence intensity of the pixel at the center of the standard direct-write field of view.

[0017] This invention F n '=ΩS n b n , Where P th b is the exposure threshold power of the photoresist. n The actual exposure depth of the nth sample field of view.

[0018] This invention gradually increases the laser power at a single pixel, with the laser power corresponding to the initial polymerization of the photoresist being P. th .

[0019] This invention 5mW≤P n ≤19mW.

[0020] This invention

[0021] The photoresist of the present invention contains 0.1-10 wt% of a photoinitiator, wherein the photoinitiator comprises at least one of 7-diethylamino-3-thiophenecarboxycoumarin, 2-isopropylthioxanthonone, 4-isopropylthioxanthonone, tetraethylmichalcosone, and Irgacure 369.

[0022] The size of a single pixel in this invention is 100nm × 100nm.

[0023] The writing power adjustment method includes:

[0024] Determine the target direct-write field of view, which has the same specifications as the sample direct-write field of view;

[0025] The target direct-write field of view is segmented to obtain target field of view partitions that correspond one-to-one with the sample field of view partitions;

[0026] Determine the target writing power corresponding to each target field of view partition;

[0027] A writing power compensation template was obtained by constructing a two-photon writing power compensation template.

[0028] Based on the writing power compensation template and the target writing power corresponding to each target field of view partition, the laser setting power of each target field of view partition is determined.

[0029] The beneficial effects of this invention are as follows:

[0030] This invention utilizes a standard direct-write field of view to determine the fluorescence intensity of the photoresist under unit volume conditions, thereby obtaining the photoresist's fluorescent material characteristics. Based on this, the sample direct-write field of view is segmented to obtain the actual fluorescence intensity of each sample field of view segment. Using the fluorescence intensity per unit volume of photoresist as a fluorescence characteristic parameter, the actual writing power of each sample field of view segment is obtained. By comparing the difference between the actual writing power and the laser setting power of each sample field of view segment, a compensation coefficient for each sample field of view segment is determined. Subsequently, when setting the power for a target direct-write field of view, the laser setting power for each target field of view segment can be adjusted based on the compensation coefficient of each sample field of view segment to ensure that the actual writing power of each target field of view segment meets expectations, thereby effectively reducing writing errors. Attached Figure Description

[0031] Figure 1 The fluorescence image of the target direct-write field of view of the first system in Embodiment 2 of the present invention (without using a power compensation template);

[0032] Figure 2 The fluorescence image (using a power-compensated template) of the target direct-write field of view of the first system in Embodiment 2 of the present invention is shown.

[0033] Figure 3 The fluorescence image of the target direct-write field of view of the second system in Embodiment 2 of the present invention (without using a power compensation template);

[0034] Figure 4 The fluorescence image (using a power-compensated template) of the target direct-write field of view of the second system in Embodiment 2 of the present invention is shown.

[0035] Figure 5 The fluorescence image of the target direct-write field of view of the third system in Embodiment 2 of the present invention (without using a power compensation template);

[0036] Figure 6 The fluorescence image (using a power-compensated template) of the target direct-write field of view of the third system in Embodiment 2 of the present invention is shown.

[0037] Figure 7 The fluorescence image of the target direct-write field of view of the fourth system in Embodiment 2 of the present invention (without using a power compensation template);

[0038] Figure 8 This is a fluorescence image of the target direct-write field of view of the fourth system in Embodiment 2 of the present invention (using a power-compensated template). Detailed Implementation

[0039] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0040] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0041] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0042] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0043] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0044] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0045] Example 1:

[0046] This embodiment provides a method for constructing a two-photon writing power compensation template, which specifically includes the following steps:

[0047] Step S1: Apply photoresist to the surface of a glass substrate and then place it in a two-photon direct-write module.

[0048] The photoresist in this embodiment comprises dicyclopentenyl methacrylate, o-phenylphenol polyoxyethylene ether acrylate, and 7-diethylamino-3-thiophenecarboxycoumarin. 7-Diethylamino-3-thiophenecarboxycoumarin serves as the photoinitiator. In some other embodiments, the photoinitiator may be a mixture of at least one or more of 7-diethylamino-3-thiophenecarboxycoumarin, 2-isopropylthioxanthone, 4-isopropylthioxanthone, tetraethylmichalcohexone, and Irgacure 369. The photoinitiator comprises 0.1-10% of the total mass fraction of the photoresist.

[0049] Step S2: After the photoresist and the two-photon direct writing module (the two-photon direct writing module mainly includes a femtosecond laser, an acousto-optic modulator, a scanning galvanometer, a writing objective, a piezoelectric platform, and a displacement platform, the femtosecond laser provides the direct writing laser, the acousto-optic modulator controls the power of the direct writing laser, and different morphologies of the writing structure are achieved by modulating the rotation direction of the scanning galvanometer, the piezoelectric platform focuses the direct writing laser onto the substrate material, and the displacement platform is used to support the substrate material and realize its horizontal movement) are focused, the first rectangular structure is written according to the drawing. The first rectangular structure corresponds to the standard direct writing field of view.

[0050] After writing, soak in propylene glycol methyl ether acetate (PGMEA) for 8 minutes, then soak in isopropanol (IPA) solution for 2 minutes to remove excess PGMEA, and finally dry with a nitrogen gun.

[0051] The standard direct-write field of view has a size of 5μm × 5μm. The writing process is performed pixel by pixel, with each pixel measuring 100nm × 100nm. The writing speed is 100mm / s, and the writing process is performed pixel by pixel sequentially. In some other embodiments, multiple pixels can be written simultaneously.

[0052] In this embodiment, the writing power corresponding to each pixel in the standard direct writing field is the same, for example, fixed at 19mW. In other embodiments, the laser setting power in the two-photon direct writing module starts from 10mW and gradually increases to 30mW in 1mW increments, so that the writing power corresponding to different pixels in the standard direct writing field is not completely different.

[0053] In this embodiment, the laser wavelength for each pixel during exposure in the standard direct-write field of view is the same, λ0. However, in some other embodiments, the laser wavelengths for different pixels during exposure may be different.

[0054] For a single pixel, the applied laser power starts from 0 or a low value and gradually increases. The laser power at which the photoresist begins to polymerize at that pixel is the exposure threshold power P of the photoresist. th It is understandable that the exposure threshold power P th The specific value is the inherent property value of the photoresist.

[0055] The beam waist radius w0 of the laser can be obtained by using a beam quality analyzer.

[0056] During the above writing process, the two-photon direct writing module uses a set power P0 (P0≥P th Exposure is achieved by irradiating each pixel of the photoresist with a laser of wavelength λ0. This allows for the determination of w0 and p. th P0 and λ0 are used to obtain the exposure depth b0 of the photoresist at each pixel. Specifically,

[0057] Step S3: Assuming that there are M pixels in the standard direct-write field of view with a laser setting power of P0, then m pixels can be selected to calculate the exposure volume V0 of the photoresist corresponding to the m pixels.

[0058] Specifically, in this embodiment, the area S0 of a single pixel is 100nm × 100nm, therefore the exposure volume at a single pixel is equal to S0 × b0. Depending on the value of m of the number of pixels with laser power set to P0, the corresponding exposure volume V0 of the photoresist will also change. Specifically, the exposure volume V0 of the photoresist can satisfy V0 = m × S0 × b0. If only one pixel with laser power set to P0 is selected, then V0 = S0 × b0.

[0059] Step S4: For the selected pixels, obtain their standard fluorescence intensity F0.

[0060] This embodiment takes the case of m=1 as an example, that is, only one pixel is selected out of M pixels, and V0=S0×b0.

[0061] For the selected pixel, the corresponding laser power setting is P0. Theoretically, the actual writing power for this pixel should also be P0. The standard fluorescence intensity F0 is the fluorescence intensity that this pixel should emit when the actual writing power is equal to P0. At the same time, the exposure depth b0 is also obtained under the default condition that the laser power setting is P0 and the actual writing power are equal.

[0062] However, when the pixel is close to the edge of the standard direct writing field of view, the edge effect may cause a deviation between the laser setting power and the actual writing power corresponding to the pixel, which in turn causes a deviation between the actual fluorescence intensity of the pixel and the standard fluorescence intensity F0.

[0063] There are two solutions to this problem. First, the selected pixel should be located at the center of the standard direct-write field of view, and the laser setting power corresponding to the selected pixel should be P0. In this case, the difference between the actual writing power of the selected pixel and the laser setting power is very small and can be approximately equal to P0. Therefore, the actual fluorescence intensity of the selected pixel is approximately equal to the standard fluorescence intensity F0. Second, detect the fluorescence intensity of all corresponding pixels (a total of M) with laser setting power of P0 and wavelength of λ0, and then calculate the average value. When this average value is used as the specific value of the standard fluorescence intensity F0 of the selected pixel, the influence of edge effect can be eliminated or reduced by calculating the average value. Accordingly, the actual writing power corresponding to this average value is approximately equal to the laser setting power P0.

[0064] The specific fluorescence detection process is as follows: The first rectangular structure is developed, and an image is formed using a fluorescence imaging module (which mainly includes an excitation laser, an excitation filter, a beam splitter, an objective lens, a fluorescence filter, and a detector. The excitation filter selects the excitation light to illuminate the sample, blocking other wavelengths of light; the light passing through the excitation filter passes through the beam splitter (whose function is to reflect the excitation light and transmit fluorescence), and after reflection, it is focused by the objective lens to illuminate the sample, exciting the corresponding fluorescence, which is collected by the objective lens, passes through the beam splitter, reaches the fluorescence filter, and is finally received by the detector) to obtain the fluorescence intensity corresponding to each pixel. The fluorescence detection process uses a Leica DM4M microscope with a 50x objective lens, an exposure time of 4 seconds, and a gamma setting of 0.21.

[0065] Step S5: In this embodiment, V0 = S0 × b0, which is the photoresist exposure volume corresponding to a single pixel, and F0 corresponds to the fluorescence intensity of a single pixel. Accordingly, Ω can be determined by the relationship F0 = ΩV0, where Ω is the fluorescence intensity emitted by a unit volume of photoresist. It can be understood that Ω is the inherent fluorescence characteristic value of the photoresist.

[0066] Step S6: Repeat steps S1 and S2, using photoresist of the same material (ensuring Ω and P). th A second rectangular structure is constructed (keeping the first and second rectangular structures unchanged), corresponding to the sample direct-write field of view. The specifications of the first and second rectangular structures can be the same or different; typically, the second rectangular structure is much larger than the first. For example, in this embodiment, the second rectangular structure has dimensions of 50μm × 50μm, and the corresponding sample direct-write field of view is generally much larger than the standard direct-write field of view. However, in this embodiment, the sample direct-write field of view is still written pixel by pixel. In other embodiments, multiple pixels can be written simultaneously. Since the laser remains unchanged, the pixel size specifications in the standard direct-write field of view and the sample direct-write field of view are usually consistent. It is easy to see that because the second rectangular structure is larger, the differences between its different pixels are also greater, and for a single pixel, the difference between its set laser power and the actual writing power is also greater.

[0067] The sample direct-write field of view is divided into at least two sample field of view partitions, each consisting of at least one pixel. When a sample field of view partition contains at least two pixels, the laser setting power corresponding to all pixels in that sample field of view partition should be consistent.

[0068] Obtain the area S of the nth sample field of view partition. n Laser wavelength λ n Laser setting power P nAnd the actual fluorescence intensity is F n '. It is easy to understand that S n It equals the product of the area S0 of a single pixel and the number of pixels contained in the nth sample field of view. Laser setting power P n It is equal to the product of the laser setting power corresponding to a single pixel in the nth sample field of view and the number of pixels. F n This is equal to the sum of the fluorescence intensities of all pixels in the nth sample field of view. The actual writing power P of the nth sample field of view is... n Due to factors such as the edge effect and the memory effect, P n 'Generally not equal to P' n It may be more than P n Larger, or possibly smaller than P n .

[0069] For two pixels, if their corresponding laser setting power is the same, their corresponding actual writing power will generally also be the same, and their corresponding exposure depths will be similar. However, considering that different pixels have different positions in the sample direct-write field of view, even if their corresponding laser setting power is the same, the actual exposure depth and actual writing power of these pixels may still differ. To eliminate this difference, in this embodiment, each sample field of view partition contains only one pixel, and the smallest writing unit pixel is used as the sample field of view partition. Therefore, the area S of each sample field of view partition is... n All equal to S0, laser set power P n And the actual fluorescence intensity is F n Each corresponds to only one pixel.

[0070] Step S7: F n 'Corresponds to the actual fluorescence intensity of a single pixel. Since the area of ​​a single pixel is fixed, therefore F n 'Related to the actual depth of the pixel inscription. That is, the Ω and S values ​​corresponding to the photoresist.' n and F n All have been obtained, based on F n '=ΩS n b n The actual exposure depth b of the nth sample field of view can be calculated. n .

[0071] Actual exposure depth b n Related to the actual writing power at the pixel, to be determined. n After the numerical solution is completed, according to The actual writing power P of the nth sample field of view can be obtained by solving. n '。 It can be seen that F n 'Gradually increasing, corresponding to P' n 'Also gradually increasing, and Fn 'and P n 'This represents a non-linear relationship.

[0072] Step S8: Via P n 'and P n Obtain the compensation coefficient Ψ for the nth sample field of view partition. n .

[0073] In this embodiment Ψ corresponding to all sample field of view partitions n Once all the solutions are obtained, a writing power compensation template can be constructed for the sample direct writing field of view. The writing power compensation template records the compensation coefficient corresponding to each pixel.

[0074] For the nth sample field of view partition, the current laser setting power P n The value is x, and the actual writing power P n The value is y, and the target inscribed power value is equal to x. However, due to various reasons, x ≠ y at this time.

[0075] In order to make P n When the value of ' changes to x, P needs to be adjusted. n The value changes. Understandably, at this time... P n The value is adjusted from x to That is, P n numerical changes Times, corresponding to P n The value of ' has also changed. Times, actual writing power P n The value also changes from y to x.

[0076] Therefore, the laser power P is set. n The set value is determined by the compensation coefficient Ψ n The magnification ensures that the actual writing power of the final sample field of view partition remains consistent with the target writing power.

[0077] Example 2:

[0078] This embodiment provides a method for adjusting the writing power, including:

[0079] Step A1: Determine the target direct-write field of view. The target direct-write field of view and the sample direct-write field of view have the same specifications.

[0080] Step A2: Segment the target direct-write field of view to obtain target field of view partitions that correspond one-to-one with the sample field of view partitions. Accordingly, in this embodiment, each target field of view partition is composed of a single pixel.

[0081] Step A3: Determine the target writing power corresponding to each target field of view partition;

[0082] Step A4: Obtain the writing power compensation template using the two-photon writing power compensation template construction method in Example 1;

[0083] Step A5: Multiply the target writing power corresponding to each target field of view partition by the compensation coefficient corresponding to the writing power compensation template to determine the laser setting power corresponding to each target field of view partition. This is used to carry out the writing process of the target direct writing field of view, so as to satisfy that the actual writing power of each target field of view partition is equal to the target writing power.

[0084] See Figure 1-2 To verify the advantages of the writing power adjustment method, the first system was written with a target writing power of 5mW per pixel and a wavelength of 780nm, both with and without a power compensation template. It can be seen that with the power compensation template, the boundaries of the first system are clearer and more distinct, indicating that the actual writing power of each pixel is more in line with the requirements after using the power compensation template.

[0085] See Figure 3-4 With a target writing power of 5mW per pixel and a wavelength of 532nm, the second system was written using and without a power compensation template. The second system using the power compensation template exhibited a clearer and more distinct boundary.

[0086] See Figure 5-6 With a target writing power of 19mW per pixel and a wavelength of 780nm, the third system was written using and without a power compensation template. The third system using the power compensation template has a clearer and more distinct boundary.

[0087] See Figure 7-8 With a target writing power of 19mW per pixel and a wavelength of 532nm, the fourth system was written using and without a power compensation template. The fourth system using the power compensation template has a clearer and more distinct boundary.

[0088] This fully demonstrates that the power compensation template can effectively modify the actual writing power at the pixel under different laser wavelengths and power conditions, making it more versatile.

[0089] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0090] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A method for constructing a two-photon writing power compensation template, characterized in that, include: Obtain the beam waist radius w0 of the laser; Obtain the current set power P0 and wavelength λ0 of the laser, and determine the current exposure depth b0 of the photoresist in the standard direct-write field of view based at least on λ0, w0 and P0; Based on b0, determine the current exposure volume V0 of the photoresist in the standard direct-write field of view; Obtain the standard fluorescence intensity F0 emitted by the photoresist with a current exposure volume of V0 in the standard direct-write field of view; Ω is determined based on F0 = ΩV0, where Ω is the fluorescence intensity emitted per unit volume of photoresist; The sample direct-write field of view is segmented to obtain at least two sample field of view partitions, and the area S of the nth sample field of view partition is obtained. n Laser setting power P n Laser wavelength λ n And the actual fluorescence intensity is F n '; At least based on Ω, S n , λ n and F n 'Determine the actual writing power P of the nth sample field of view partition n '; Based on P n 'and P n Determine the compensation coefficient Ψ for the nth sample field of view partition. n ; A writing power compensation template is constructed based on the compensation coefficients of all sample field-of-view partitions.

2. The method for constructing a two-photon writing power compensation template according to claim 1, characterized in that, Each of the sample field-of-view partitions is a single pixel.

3. The method for constructing a two-photon writing power compensation template according to claim 2, characterized in that, The standard fluorescence intensity F0 is the average fluorescence intensity of a single pixel in the standard direct-write field of view, or the fluorescence intensity of the pixel at the center of the standard direct-write field of view.

4. The method for constructing a two-photon writing power compensation template according to claim 3, characterized in that, F n '=ΩS n b n , Where P th b is the exposure threshold power of the photoresist. n The actual exposure depth of the nth sample field of view.

5. The method for constructing a two-photon writing power compensation template according to claim 4, characterized in that, The laser power is gradually increased at each individual pixel, with the laser power corresponding to the initial laser power at which the photoresist polymerization begins being P. th .

6. The method for constructing a two-photon writing power compensation template according to claim 1, characterized in that, 5mW≤P n ≤19mW。 7. The method for constructing a two-photon writing power compensation template according to claim 1, characterized in that, 8. The method for constructing a two-photon writing power compensation template according to claim 1, characterized in that, The photoresist contains 0.1-10 wt% of a photoinitiator, which contains at least one of 7-diethylamino-3-thiophenecarboxycoumarin, 2-isopropylthioxanthonone, 4-isopropylthioxanthonone, tetraethylmiel's ketone, and Irgacure 369.

9. The method for constructing a two-photon writing power compensation template according to claim 1, characterized in that, The size of a single pixel is 100nm × 100nm.

10. A method for adjusting writing power, characterized in that, include: Determine the target direct-write field of view, which has the same specifications as the sample direct-write field of view; The target direct-write field of view is segmented to obtain target field of view partitions that correspond one-to-one with the sample field of view partitions; Determine the target writing power corresponding to each target field of view partition; The writing power compensation template is obtained by the two-photon writing power compensation template construction method as described in any one of claims 1-9; Based on the writing power compensation template and the target writing power corresponding to each target field of view partition, the laser setting power of each target field of view partition is determined.

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