Display device

Abstract

A display device includes a resin substrate layer (10), a thin film transistor layer provided on the resin substrate layer (10) and sequentially stacked with a gate insulating film (13), an interlayer insulating film (15, 20), and a planarization film (22a), and a light emitting element layer provided on the thin film transistor layer and sequentially stacked with a plurality of first electrodes, a shared edge cover (32a), a plurality of light emitting functional layers (33), and a shared second electrode (34) corresponding to a plurality of sub-pixels constituting a display region. A through hole is provided in an island-shaped non-display region (N) inside the display region, and a first light shielding film (31b) is provided in the non-display region (N) at a peripheral edge portion of the planarization film (22a) in a manner to cover a side wall of the peripheral edge portion.

Description

TECHNICAL FIELD

[0001] The present application relates to a display device. BACKGROUND

[0002] In recent years, as a display device that replaces a liquid crystal display device, an organic EL display device of a self-light-emitting type using an organic electroluminescence (hereinafter also referred to as EL) element has been attracting attention. In this case, the organic EL element, for example, includes a first electrode provided on a planarization film of a TFT layer in which thin film transistors (hereinafter also referred to as "TFTs") are arranged, an organic EL layer provided on the first electrode, and a second electrode provided on the organic EL layer. In the organic EL display device, a configuration in which an island-shaped non-display region in which a through-hole penetrating in a thickness direction is provided is provided in the inside of a display region in which image display is performed, for example, in order to provide an electronic element such as a camera, a fingerprint sensor, and the like has been proposed (for example, refer to Patent Document 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2019-35950 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] However, in the organic EL display device in which the through-hole is provided in the non-display region in the inside of the display region, since the peripheral edge of the through-hole is close to the display region, a structure in which light from the outside easily enters the display region through the through-hole and the (transparent) planarization film is formed. In this case, the TFT for driving the organic EL element is provided in each sub-pixel constituting the display region, and thus the characteristics of the TFT can be reduced due to light incident to the TFT. In addition, in recent years, although an organic EL display device having a hybrid structure in which a TFT using polycrystal silicon and a TFT using an oxide semiconductor are provided in each sub-pixel has been proposed, the TFT using the oxide semiconductor has a light-resistant property compared to the TFT using the polycrystal silicon.

[0008] The present application has been achieved in view of the above point, and an object thereof is to suppress reduction in characteristics of a TFT caused by light incident from a through-hole provided in a non-display region in the inside of a display region.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] To achieve the above object, a display device according to the present application is characterized by comprising: a resin substrate layer; a thin film transistor layer provided on the resin substrate layer, sequentially stacked with an interlayer insulating film composed of an inorganic insulating film and a planarization film composed of an organic insulating film; and a light emitting element layer provided on the thin film transistor layer, sequentially stacked with a plurality of first electrodes, a shared edge cover, a plurality of light emitting functional layers, and a shared second electrode corresponding to a plurality of sub-pixels constituting a display region, the thin film transistor layer comprising a thin film transistor provided for each of the sub-pixels on the resin substrate layer side of the planarization film, an island-shaped non-display region provided inside the display region, a through-hole penetrating in a thickness direction of the resin substrate layer provided in the non-display region, and a first light shielding film provided in a peripheral portion of the planarization film in the non-display region in a manner to cover a side wall of the peripheral portion.

[0011] Effects of the Invention

[0012] According to the present application, a decrease in TFT characteristics caused by light incident from a through-hole of a non-display region provided inside a display region can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 is a plan view showing an outline structure of an organic EL display device according to a first embodiment of the present application.

[0014] Figure 2 is a plan view of a display region of an organic EL display device according to the first embodiment of the present application.

[0015] Figure 3 is a cross-sectional view of a display region of an organic EL display device according to the first embodiment of the present application.

[0016] Figure 4 is an equivalent circuit diagram showing a pixel circuit of an organic EL display device according to the first embodiment of the present application.

[0017] Figure 5 is a cross-sectional view showing an organic EL layer constituting an organic EL display device according to the first embodiment of the present application.

[0018] Figure 6 is a plan view of a non-display region of an organic EL display device according to the first embodiment of the present application.

[0019] Figure 7 is a cross-sectional view of a non-display region of an organic EL display device along a line VII-VII in Figure 6 .

[0020] Figure 8is a cross-sectional view of a non-display region in a modification of the organic EL display device according to the first embodiment of the present invention, and is a view corresponding to Figure 7

[0021] Figure 9 is a cross-sectional view of a non-display region of the organic EL display device according to the second embodiment of the present invention, and is a view corresponding to Figure 7

[0022] Figure 10 is a cross-sectional view of a display region of the organic EL display device according to the third embodiment of the present invention, and is a view corresponding to Figure 3

[0023] Figure 11 is a cross-sectional view of a non-display region of the organic EL display device according to the third embodiment of the present invention, and is a view corresponding to Figure 7 DETAILED DESCRIPTION

[0024] Hereinafter, the embodiments of the present invention will be described in detail based on the drawings. Furthermore, the present invention is not limited to the following embodiments.

[0025] FIRST EMBODIMENT

[0026] Figures 1-8 A first embodiment of a display device according to the present invention is described. Furthermore, in each of the following embodiments, an organic EL display device having an organic EL element layer is exemplified as a display device having a light emitting element layer. Herein, Figure 1 is a plan view showing the schematic structure of an organic EL display device 50a according to the present embodiment. In addition, Figure 2 and Figure 3 are a plan view and a cross-sectional view of a display region D of the organic EL display device 50a. In addition, Figure 4 is an equivalent circuit diagram showing a pixel circuit of the organic EL display device 50a. In addition, Figure 5 is a cross-sectional view showing an organic EL layer 33 constituting the organic EL display device 50a. In addition, Figure 6 is a plan view of a non-display region N of the organic EL display device 50a. In addition, Figure 7 is a cross-sectional view of the non-display region N of the organic EL display device 50a along the line VII-VII in Figure 6 In addition, Figure 8 is a cross-sectional view of the non-display region N in an organic EL display device 50aa of a modification of the organic EL display device 50a, and is a view corresponding to Figure 7

[0027] As shown in Figure 1 ​​​​​As shown, the organic EL display device 50a includes, for example, a rectangular display area D for displaying images and a frame area F provided in a frame shape around the display area D. In this embodiment, a rectangular display area D is illustrated, but the rectangle also includes a generally rectangular shape having arc-shaped sides, arc-shaped corners, or a shape with a notch on a portion of the side.

[0028] like Figure 2 As shown in FIG. 1 , in the display area D, a plurality of sub-pixels P are arranged in a matrix. Figure 2 As shown, for example, a sub-pixel P having a red light-emitting region Er for displaying red, a sub-pixel P having a green light-emitting region Eg for displaying green, and a sub-pixel P having a blue light-emitting region Eb for displaying blue are arranged adjacent to each other. In addition, in the display area D, for example, three adjacent sub-pixels P having a red light-emitting region Er, a green light-emitting region Eg, and a blue light-emitting region Eb constitute one pixel. In addition, as shown Figure 1 As shown in FIG. 1 , an island-shaped non-display area N is provided inside the display area D. Figure 1 As shown, in the non-display area N, a through hole H is provided that penetrates the resin substrate layer 10 in the thickness direction, which will be described later, in order to arrange electronic components 60 such as a camera, a fingerprint sensor, or a face recognition sensor on the back side.

[0029] In the border area F Figure 1 The terminal portion T is arranged to extend in one direction (the X direction in the figure) at the middle and lower end. Figure 1 As shown, between the display area D and the terminal portion T, the X direction in the figure is used as the bending axis, and a bending portion B that can be bent into 180 degrees (U shape) is provided in a manner extending in one direction (X direction in the figure). Figure 1 As shown, on the planarization film 22a described later, a groove G having a substantially C-shape when viewed from above is provided so as to penetrate the planarization film 22a. Figure 1 As shown, the groove G is provided in a substantially C-shape so as to be open on the terminal portion T side in a plan view.

[0030] In addition, if Figure 3 As shown, the organic EL display device 50a includes a resin substrate layer 10, a TFT layer 30a provided on the resin substrate layer 10, an organic EL element layer 40 provided as a light-emitting element layer on the TFT layer 30a, and a sealing film 45 provided in a manner covering the organic EL element layer 40.

[0031] The resin substrate layer 10 is made of, for example, a polyimide resin. Figure 6 As shown in FIG. 1 , the first recess Ca and the plurality of second recesses Cb are concentrically arranged in an annular shape so as to surround the through hole H. Figure 7 As shown, the first recessed portion Ca and each second recessed portion Cb are provided in an inverted tapered shape whose width narrows toward the opening so as to reach the upper layer portion of the resin substrate layer 10 .

[0032] like Figure 3 As shown, the TFT layer 30a includes a base coat film 11 provided on the resin substrate layer 10, and an initialization TFT 9a (see FIG. 1 ) provided in each sub-pixel P on the base coat film 11. Figure 4 ), compensation TFT9b (refer to Figure 4 ), TFT9c for writing (refer to Figure 4 ), driving TFT9d, power supply TFT9e (refer to Figure 4 ), light emission control TFT9f, anode discharge TFT9g and capacitor 9h, and a planarization film 22a provided on each TFT9a to 9g and capacitor 9h. Figure 2 As shown in FIG. 1 , a plurality of gate lines 14g are provided on the TFT layer 30a so as to extend parallel to each other in the X direction in the figure. Figure 2 As shown, a plurality of light emission control lines 14e are provided on the TFT layer 30a so as to extend parallel to each other in the X direction in the figure. Figure 2 As shown, a plurality of second initialization power supply lines 19i are provided on the TFT layer 30a so as to extend parallel to each other in the X direction in the figure. Figure 2 As shown, each light emitting control line 14e is arranged adjacent to each gate line 14g and each second initialization power supply line 19i. Figure 2 As shown in FIG. 1 , a plurality of source lines 21h are provided on the TFT layer 30a so as to extend parallel to each other in the Y direction in the figure. Figure 2 As shown in FIG. 1 , a plurality of power supply lines 21i are provided on the TFT layer 30a so as to extend parallel to each other in the Y direction in the figure. Figure 2 As shown, each power supply line 21i is provided adjacent to each source line 21h.

[0033] The write TFT 9c, the drive TFT 9d, the power supply TFT 9e, and the light emission control TFT 9f are provided, for example, as first TFTs having a first semiconductor layer formed of polycrystalline silicon such as LTPS (Low Temperature Poly Silicon), and include a gate electrode, a first terminal electrode, and a second terminal electrode. The initialization TFT 9a, the compensation TFT 9b, and the anode discharge TFT 9g are provided, for example, as second TFTs having a second semiconductor layer formed of an oxide semiconductor such as In-Ga-Zn-O, and include a gate electrode, a third terminal electrode, and a fourth terminal electrode. Here, the In-Ga-Zn-O oxide semiconductor is a ternary oxide of In (indium), Ga (gallium), and Zn (zinc), and the proportions (composition ratios) of In, Ga, and Zn are not particularly limited. In addition, the In-Ga-Zn-O semiconductor can be amorphous or crystalline. Further, as the crystalline In-Ga-Zn-O semiconductor, a crystalline In-Ga-Zn-O semiconductor in which the c-axis is aligned substantially perpendicular to the layer plane is preferable. In addition, instead of the In-Ga-Zn-O semiconductor, another oxide semiconductor can be contained. As the other oxide semiconductor, for example, an In-Sn-Zn-O semiconductor (for example, In2O3-SnO2-ZnO; InSnZnO) can be included. Here, the In-Sn-Zn-O semiconductor is a ternary oxide of In (indium), Sn (tin), and Zn (zinc). In addition, as the other oxide semiconductor, an In-Al-Zn-O semiconductor, an In-Al-Sn-Zn-O semiconductor, a Zn-O semiconductor, an In-Zn-O semiconductor, a Zn-Ti-O semiconductor, a Cd-Ge-O semiconductor, a Cd-Pb-O semiconductor, CdO (cadmium oxide), a Mg-Zn-O semiconductor, an In-Ga-Sn-O semiconductor, an In-Ga-O semiconductor, a Zr-In-Zn-O semiconductor, a Hf-In-Zn-O semiconductor, an Al-Ga-Zn-O semiconductor, a Ga-Zn-O semiconductor, an In-Ga-Zn-Sn-O semiconductor, InGaO3(ZnO)5, magnesium zinc oxide (Mg x Zn 1-x O), cadmium zinc oxide (Cd x Zn 1-x O), and the like can be included. Further, as the Zn-O semiconductor, a semiconductor in an amorphous (non-crystalline) state of ZnO to which one or more of Group 1 elements, Group 13 elements, Group 14 elements, Group 15 elements, Group 17 elements, and the like are added as impurity elements, a semiconductor in a polycrystalline state, a semiconductor in a microcrystalline state in which an amorphous state and a polycrystalline state coexist, or a semiconductor to which no impurity element is added can be used.

[0034] As shown in FIG. 9A, the initialization TFT 9a in each sub-pixel P has its gate electrode electrically connected to the gate line 14g(n-1) of the preceding stage (n-1 stage), its third terminal electrode electrically connected to the lower conductive layer 16c of the capacitor 9h and the gate electrode of the drive TFT 9d described later, and its fourth terminal electrode electrically connected to the power supply line 21i. Further, in the equivalent circuit diagram of FIG. 9A, the first and second terminal electrodes of the first TFT (the write-in TFT 9c, the drive TFT 9d, the power supply TFT 9e, and the light emission control TFT 9f) are indicated by the round numbers 1 and 2, and the third and fourth terminal electrodes of the second TFT (the initialization TFT 9a, the compensation TFT 9b, and the anode discharge TFT 9g) are indicated by the round numbers 3 and 4. Figure 4 Figure 4 Figure 4 Figure 4

[0035] As shown in FIG. 9B, the compensation TFT 9b in each sub-pixel P has its gate electrode electrically connected to the gate line 14g(n) of the present stage (n stage), its third terminal electrode electrically connected to the gate electrode of the drive TFT 9d, and its fourth terminal electrode electrically connected to the first terminal electrode of the drive TFT 9d. Figure 4

[0036] As shown in FIG. 9C, the write-in TFT 9c in each sub-pixel P has its gate electrode electrically connected to the gate line 14g(n) of the present stage (n stage), its first terminal electrode electrically connected to the corresponding source line 21h, and its second terminal electrode electrically connected to the second terminal electrode of the drive TFT 9d. Figure 4

[0037] As shown in FIG. 9D, the drive TFT 9d in each sub-pixel P has its gate electrode 14b (see FIG. 9E) electrically connected to the third terminal electrodes of the initialization TFT 9a and the compensation TFT 9b, its first terminal electrode 21e (see FIG. 9F) electrically connected to the fourth terminal electrode of the compensation TFT 9b and the second terminal electrodes of the power supply TFT 9e, and its second terminal electrode 21g (see FIG. 9G) electrically connected to the second terminal electrodes of the light emission control TFT 9f and the anode discharge TFT 9g. Figure 4 Figure 3 Figure 3 Figure 3 ​​​​​​​​​) is electrically connected to the second terminal electrode of the writing TFT 9c and the first terminal electrode of the light emission control TFT 9f. Here, the driving TFT 9d is configured to control the current of the organic EL element 35. Figure 3 As shown, the driving TFT 9d includes a first semiconductor layer 12b provided on a base coat film 11, a first gate insulating film 13 provided on the first semiconductor layer 12b, a gate electrode 14b provided on the first gate insulating film 13, a first interlayer insulating film 15 and a second interlayer insulating film 20 provided so as to cover the gate electrode 14b, and a first terminal electrode 21e and a second terminal electrode 21g provided on the second interlayer insulating film 20 in a manner separated from each other. Here, the first semiconductor layer 12b includes a first conductor region and a second conductor region provided in a manner separated from each other, and a channel region defined between the first conductor region and the second conductor region. And, as shown in FIG. Figure 3 As shown, the first terminal electrode 21e and the second terminal electrode 21g are electrically connected to the first conductor region and the second conductor region of the first semiconductor layer 12b respectively via two contact holes formed in the stacked film of the first gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 20.

[0038] like Figure 4 As shown, in each sub-pixel P, the power supply TFT9e has a gate electrode electrically connected to the light-emitting control line 14e of this level (n level), a first terminal electrode electrically connected to the power line 21i, and a second terminal electrode electrically connected to the first terminal electrode of the driving TFT9d.

[0039] like Figure 4 As shown, the light emission control TFT 9f is provided in each sub-pixel P, and its gate electrode 14a (see Figure 3 ) is electrically connected to the light emitting control line 14e of the current level (n level), and its first terminal electrode 21a (refer to Figure 3 ) is electrically connected to the second terminal electrode of the driving TFT 9d, and the second terminal electrode 21c (refer to Figure 3 ) is electrically connected to the first electrode 31a of the organic EL element 35 described later. Figure 3As shown, the light emission control TFT 9f has: the first semiconductor layer 12a provided on the base coat film 11, the first gate insulating film 13 provided on the first semiconductor layer 12a, the gate electrode 14a provided on the first gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 20 provided in a manner of covering the gate electrode 14a, and the first terminal electrode 21a and the second terminal electrode 21b (21c) provided on the second interlayer insulating film 20 in a manner of being separated from each other. Here, the first semiconductor layer 12a has the first conductor region and the second conductor region provided in a manner of being separated from each other, and the channel region defined between the first conductor region and the second conductor region. Also, as shown, Figure 3 , the first terminal electrode 21a and the second terminal electrode 21b are electrically connected to the first conductor region and the second conductor region of the first semiconductor layer 12a, respectively, through two contact holes formed in the laminated film of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20. Also, as shown, Figure 3 , the second terminal electrode 21c is electrically connected to the second conductor region of the first semiconductor layer 12a via a contact hole formed in the laminated film of the first gate insulating film 13 and the first interlayer insulating film 15, the relay electrode 16a, and a contact hole formed in the second interlayer insulating film 20.

[0040] As shown, Figure 4 , the anode discharge TFT 9g has, in each of the sub-pixels P, the gate electrode 19a (see Figure 3 ) electrically connected to the gate line 14g (n) of the present stage (n-th stage), the third terminal electrode 21c (see Figure 3 ) electrically connected to the first electrode 31a of the organic EL element 35, and the fourth terminal electrode 21d (see Figure 3 ) electrically connected to the second initialization power supply line 19i. In addition, the third terminal electrode 21c of the anode discharge TFT 9g is shared with the second terminal electrode 21c of the light emission control TFT 9f. Also, as shown, Figure 3 , the anode discharge TFT 9g has: the second semiconductor layer 17a provided on the first interlayer insulating film 15, the second gate insulating film 18a provided on the second semiconductor layer 17a, the gate electrode 19a provided on the second gate insulating film 18a, the second interlayer insulating film 20 provided in a manner of covering the gate electrode 19a, and the third terminal electrode 21c and the fourth terminal electrode 21d provided on the second interlayer insulating film 20 in a manner of being separated from each other. Here, as shown, Figure 3 , the second semiconductor layer 17a has the third conductor region and the fourth conductor region provided in a manner of being separated from each other, and the channel region provided between the third conductor region and the fourth conductor region. Also, as shown, Figure 3As shown, the third terminal electrode 21c is electrically connected to the third conductor region of the second semiconductor layer 17a via the contact hole formed in the second interlayer insulating film 20 and the relay electrode 16a. In addition, as shown, the fourth terminal electrode 21d is electrically connected to the fourth conductor region of the second semiconductor layer 17a via the contact hole formed in the second interlayer insulating film 20 and the relay electrode 16b. Figure 4 As shown, the fourth terminal electrode 21d is electrically connected to the fourth conductor region of the second semiconductor layer 17a via the contact hole formed in the second interlayer insulating film 20 and the relay electrode 16b.

[0041] Further, in the present embodiment, the pixel circuit is exemplified in which, as the first TFT having the first semiconductor layer formed of polycrystal silicon, the write-in TFT 9c, the drive TFT 9d, the power supply TFT 9e, and the light emission control TFT 9f are provided, and as the second TFT having the second semiconductor layer formed of an oxide semiconductor, the initialization TFT 9a, the compensation TFT 9b, and the anode discharge TFT 9g are provided, but all the TFTs of the pixel circuit, i.e., the initialization TFT 9a, the compensation TFT 9b, the write-in TFT 9c, the drive TFT 9d, the power supply TFT 9e, the light emission control TFT 9f, and the anode discharge TFT 9g can be constituted by the TFTs having the semiconductor layer formed of an oxide semiconductor.

[0042] As shown, the capacitor 9h is electrically connected to the gate electrode 14b (see Figure 3 ) of the drive TFT 9d, the third terminal electrode of the initialization TFT 9a, and the third terminal electrode of the compensation TFT 9b in each sub-pixel P at the lower portion thereof, and is electrically connected to the third terminal electrode of the anode discharge TFT 9g, the second terminal electrode of the light emission control TFT 9f, and the first electrode 31a of the organic EL element 35 at the upper portion thereof. Figure 3 Figure 3 Figure 3 Figure 4 As shown, the capacitor 9h has the lower portion conductive layer 16c formed of the same material as the relay electrodes 16a and 16b at the same layer, the second gate insulating film 18b provided on the lower portion conductive layer 16c, and the upper portion conductive layer 19b provided on the second gate insulating film 18b and formed of the same material as the gate electrode 19a at the same layer.

[0043] The planarization film 22a has a flat surface in the display region D and is constituted by, for example, an organic resin material such as a polyimide resin, an acrylic resin, or the like, or an organic insulating film such as a SOG (Spin On Glass) material of a polysiloxane system.

[0044] ​​​The organic EL element layer 40 has a plurality of first electrodes 31a, a common edge cover 32a, a plurality of organic EL layers 33, and a common second electrode 34, which are provided in order corresponding to the plurality of sub-pixels P. Here, in each sub-pixel P, the first electrode 31a, the organic EL layer 33, and the second electrode 34 constitute an organic EL element 35 (see FIG. 2). Figure 5

[0045] The first electrode 31a is electrically connected to the second terminal electrode 21c of the light emission control TFT 9f of each sub-pixel P via a contact hole formed in the planarization film 22a. In addition, the first electrode 31a has a function of injecting holes (holes) into the organic EL layer 33. In addition, in order to improve the efficiency of injecting holes into the organic EL layer 33, it is more preferable that the first electrode 31a be formed of a material having a large work function. Here, as a material constituting the first electrode 31a, for example, a metal material such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), tin (Sn), or the like can be listed. In addition, the material constituting the first electrode 31a may, for example, be an alloy such as astatine (At) / astatine oxide (AtO2), or the like. Furthermore, the material constituting the first electrode 31a may, for example, be a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like. In addition, the first electrode 31a can be formed by laminating a plurality of layers composed of the above-described materials. Furthermore, as a compound material having a large work function, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or the like can be listed. In addition, the film thickness of the first electrode 31a is, for example, about 160 nm, and is preferably 150 nm or more and 300 nm or less.

[0046] The edge cover 32a is provided in common to all of the sub-pixels P in a lattice shape, and is composed of, for example, an organic resin material such as a polyimide resin, an acrylic resin, or the like, or a SOG material of a polysiloxane system, or the like.

[0047] The organic EL layer 33 is provided as a light emission functional layer, and is shown to have a hole injection layer 1, a hole transport layer 2, a light emission layer 3, an electron transport layer 4, and an electron injection layer 5, which are laminated in order on the first electrode 31a. Figure 3

[0048] ​​The hole injection layer 1, also called an anode buffer layer, has a function of bringing the energy level of the first electrode 31a close to that of the organic EL layer 33, and improving the hole injection efficiency from the first electrode 31a to the organic EL layer 33. Here, as a material constituting the hole injection layer 1, for example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyaromatic hydrocarbon derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, styrene derivatives, and the like can be listed.

[0049] The hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 31a to the organic EL layer 33. Here, as a material constituting the hole transport layer 2, for example, porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, styrene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide, and the like can be listed.

[0050] The light emitting layer 3 is a region in which holes and electrons are injected from the first electrode 31a and the second electrode 34, respectively, and the holes and the electrons recombine, when a voltage is applied to the first electrode 31a and the second electrode 34. Here, the light emitting layer 3 is formed of a material having high light emitting efficiency. Also, as a material constituting the light emitting layer 3, for example, metallo-oxo compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenyl ethylene derivatives, vinyl propionone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, distyrylbenzene derivatives, tristyrylbenzene derivatives, xanthene derivatives, perylene derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, acridine derivatives, phenoxazone, quinacridone derivatives, perylene, poly-p-phenylenevinylene, polysilane, and the like can be listed.

[0051] The electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3. Here, as a material constituting the electron transport layer 4, for example, as an organic compound, oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinone dimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silane derivatives, metal oxide compounds, and the like can be listed.

[0052] The electron injection layer 5 has the function of bringing the energy levels of the second electrode 34 and the organic EL layer 33 closer together, thereby improving the efficiency of electron injection from the second electrode 34 to the organic EL layer 33. This function can reduce the driving voltage of the organic EL element 35. The electron injection layer 5 is also called a cathode buffer layer. Examples of materials constituting the electron injection layer 5 include inorganic alkaline compounds such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), aluminum oxide (Al2O3), and strontium oxide (SrO).

[0053] like Figure 3 As shown, the second electrode 34 is commonly provided on all sub-pixels P in a manner covering each organic EL layer 33 and the edge cover 32a. Furthermore, the second electrode 34 has the function of injecting electrons into the organic EL layer 33. Furthermore, in order to improve the efficiency of injecting electrons into the organic EL layer 33, the second electrode 34 is preferably formed of a material with a low work function. Examples of materials constituting the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). Alternatively, the second electrode 34 may be formed of, for example, an alloy of magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatine oxide (AtO2), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). Alternatively, the second electrode 34 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Furthermore, the second electrode 34 may be formed by stacking multiple layers of the above materials. In addition, as materials with a small work function, for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc.

[0054] like Figure 7 and Figure 1As shown, the sealing film 45 has: the first inorganic sealing film 41, the organic sealing film 42, and the second inorganic sealing film 43, which are provided to cover the second electrode 34 and are sequentially stacked on the second electrode 34, and has a function of protecting the organic EL layer 33 of the organic EL element 35 from moisture, oxygen, and the like. Here, the first inorganic sealing film 41 and the second inorganic sealing film 43 are, for example, composed of an inorganic insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like. In addition, the organic sealing film 42 is, for example, composed of an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, a polyamide resin, or the like.

[0055] In addition, as shown in FIG. 1, the organic EL display device 50a has the first frame wiring 21j provided in the frame region F in a frame shape on the inner side of the trench G, and the both end portions of the portion of the opening of the trench G extend to the terminal portion T. Here, the first frame wiring 21j is connected to the power supply line 21i on the display region D side of the frame region F and inputs a high power supply voltage (ELVDD) to the terminal portion T. Figure 1 In addition, as shown in FIG. 1, the organic EL display device 50a has the second frame wiring 21k provided in the frame region F in a frame shape on the outer side of the trench G, and the both end portions thereof extend to the terminal portion T. Here, the second frame wiring 21k is electrically connected to the second electrode 34 on the display region D side of the frame region F and inputs a low power supply voltage (ELVSS) to the terminal portion T.

[0056] Figure 1 In addition, as shown in FIG. 1, the organic EL display device 50a has the first frame wiring 21j provided in the frame region F in a frame shape on the inner side of the trench G, and the both end portions of the portion of the opening of the trench G extend to the terminal portion T. Here, the first frame wiring 21j is connected to the power supply line 21i on the display region D side of the frame region F and inputs a high power supply voltage (ELVDD) to the terminal portion T.

[0057] In addition, as shown in FIG. 1, the organic EL display device 50a has the second frame wiring 21k provided in the frame region F in a frame shape on the outer side of the trench G, and the both end portions thereof extend to the terminal portion T. Here, the second frame wiring 21k is electrically connected to the second electrode 34 on the display region D side of the frame region F and inputs a low power supply voltage (ELVSS) to the terminal portion T. Figure 7 In addition, as shown in FIG. 1, the organic EL display device 50a has the second frame wiring 21k provided in the frame region F in a frame shape on the outer side of the trench G, and the both end portions thereof extend to the terminal portion T. Here, the second frame wiring 21k is electrically connected to the second electrode 34 on the display region D side of the frame region F and inputs a low power supply voltage (ELVSS) to the terminal portion T.

[0058] Figure 7 In addition, as shown in FIG. 1, the organic EL display device 50a has the first frame wiring 21j provided in the frame region F in a frame shape on the inner side of the trench G, and the both end portions of the portion of the opening of the trench G extend to the terminal portion T. Here, the first frame wiring 21j is connected to the power supply line 21i on the display region D side of the frame region F and inputs a high power supply voltage (ELVDD) to the terminal portion T. Figure 7 ​​As shown, it is covered by the edge cover 32a. Figure 6 As shown, a plurality of first routing wirings 14n and a plurality of second routing wirings 21n are provided on the resin substrate layer 10 side of the first light shielding film 31b, bypassing the through-holes H. Furthermore, the first routing wirings 14n and the second routing wirings 21n are electrically connected to display wiring (gate lines 14g, light emission control lines 14e, second initialization power supply lines 19i, source lines 21h, power supply lines 21i, etc.) extending to portions corresponding to the through-holes H.

[0059] In addition, if Figure 7 and Figure 7 As shown, the organic EL display device 50a includes an inner barrier wall Wc in the non-display area N. The inner barrier wall Wc is provided in an annular shape so as to surround the through hole H and overlap the inner peripheral end of the organic sealing film 42. Figure 6 As shown, the inner blocking wall Wc includes: a first resin layer 22b, which is formed on the same layer with the same material as the planarizing film 22a; a second shading film 31c, which is arranged in a manner covering the first resin layer 22b; and a second resin layer 32b, which is arranged in a manner covering the second shading film 31c and is formed on the same layer with the same material as the edge cover 32a.

[0060] In addition, if Figure 7 as well as Figure 7 As shown, the organic EL display device 50a includes a first recess Ca in the non-display region N. The first recess Ca is provided in an annular shape concentrically on the outside of the inner barrier wall Wc so as to surround the through hole H. Figure 6 As shown, the first recess Ca is provided between the first light-shielding film 31b and the second light-shielding film 31c. The base coat film 11, first gate insulating film 13, first interlayer insulating film 15, and second interlayer insulating film 20 extend like an eaves, reaching the upper portion of the resin substrate layer 10. The width of the film tapers toward the opening (upward in the figure). Furthermore, the organic EL layer 33 and the second electrode 34 are separated and formed on the display area D side and the through-hole H side, respectively, by the first recess Ca and the second recess Cb, described later.

[0061] In addition, if Figure 7 as well as Figure 7 As shown, the organic EL display device 50a includes a plurality of second recesses Cb provided concentrically in an annular shape on the inner side of the inner barrier wall Wc so as to surround the through hole H in the non-display area N. Figure 6 As shown, the second concave portion Cb is provided between the light shielding film 31c and the through hole H (refer to Figure 7The base coating film 11, the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20 protrude in a roof shape so as to reach the upper layer portion of the resin substrate layer 10, and are tapered in a reverse conical shape in which the width toward the opening (upper side in the drawing) is narrow.

[0062] In the organic EL display device 50a configured as described above, in each sub-pixel P, first, when the emission control line 14e is selected to be in an inactive state, the organic EL element 35 becomes in a non-emission state. In this non-emission state, the gate line 14g(n-1) of the preceding stage is selected, and a gate signal is input to the initialization TFT 9a via the gate line 14g(n-1), whereby the initialization TFT 9a becomes in an on state, and at the same time, the high power supply voltage ELVDD of the power supply line 21i is applied to the capacitor 9h, and the drive TFT 9d becomes in an on state. Thus, the charge of the capacitor 9h is discharged, and the voltage applied to the gate electrode of the drive TFT 9d is initialized. Next, by selecting the gate line 14(n) of the present stage to be in an active state, the compensation TFT 9b and the write TFT 9c become in an on state, and a prescribed voltage corresponding to the source signal transmitted via the corresponding source line 21h is written to the capacitor 9h via the drive TFT 9d in a diode connection state, and the anode discharge TFT 9g becomes in an on state, and an initialization signal is applied to the first electrode 31a of the organic EL element 35 via the second initialization power supply line 19i, whereby the charge accumulated in the first electrode 31a is reset. Thereafter, the emission control line 14e is selected, and the power supply TFT 9e and the emission control TFT 9f become in an on state, and a drive current corresponding to the voltage applied to the gate electrode of the drive TFT 9d is supplied to the organic EL element 35 from the power supply line 21i. In this way, in the organic EL display device 50a, in each sub-pixel P, the organic EL element 35 emits light with a luminance corresponding to the drive current, and image display is performed. In addition, the organic EL display device 50a is provided with the first light shielding film 31b and the second light shielding film 31c in the non-display region N in a manner so as to surround the through hole H, and thus the light L from the outside incident from the through hole H is interrupted by the first light shielding film 31b and the second light shielding film 31c, and as shown in FIG. 1, a configuration is obtained in which the light L from the outside is difficult to be incident to the display region D. Figure 8

[0063] In addition, in the present embodiment, the organic EL display device 50a in which the first light shielding film 31b is provided at the peripheral end portion of the planarization film 22a is exemplified, but the organic EL display device 50aa in which the inner first light shielding film 31ba and the outer first light shielding film 31bb are provided at the peripheral end portion of the planarization film 22a can also be used. Specifically, in the organic EL display device 50aa, in the non-display region N, as shown in FIG. 6, the inner first light shielding film 31ba and the outer first light shielding film 31bb are provided at the peripheral end portion of the planarization film 22a, and the through hole H is formed in the planarization film 22a so as to be surrounded by the inner first light shielding film 31ba and the outer first light shielding film 31bb. Figure 9 ​As shown, the inner side groove Gi is formed in the planarization film 22a in a manner that penetrates the planarization film 22a and surrounds the through-hole H, the inner side first light shielding film 31ba is provided in a manner that covers the side wall of the peripheral edge portion of the planarization film 22a, and the outer side first light shielding film 31bb is provided in a manner that covers the inner side groove Gi. According to the organic EL display device 50aa, since the inner side groove Gi is formed in the planarization film 22a, a structure in which light L from the outside that is incident from the through-hole H is more difficult to be incident can be adopted, and moisture can be inhibited from intruding into the display region D via the planarization film 22a, and deterioration of the organic EL layer 33 of the organic EL element 35 can be inhibited.

[0064] Next, the manufacturing method of the organic EL display device 50a of the present embodiment will be described. Here, the manufacturing method of the organic EL display device 50a of the present embodiment includes a TFT layer forming step, an organic EL element layer forming step, a sealing film forming step, and a through-hole forming step.

[0065] <TFT layer forming step>

[0066] First, a silicon oxide film (thickness: about 250 nm) and a silicon nitride film (thickness: about 100 nm) are sequentially formed on the resin substrate layer 10 formed on the glass substrate by, for example, a plasma CVD (Chemical Vapor Deposition) method, thereby forming a base coating film 11.

[0067] Next, an amorphous silicon film (thickness: about 50 nm) is formed on the substrate surface on which the base coating film 11 is formed by a plasma CVD method, and the amorphous silicon film is crystallized by laser annealing or the like to form a polysilicon film, and the polysilicon film is patterned to form a first semiconductor layer 12a and the like.

[0068] Further, after the first gate insulating film 13 is formed by, for example, a plasma CVD method by forming a silicon oxide film (about 100 nm) on the substrate surface on which the first semiconductor layer 12a is formed, and a metal film such as a molybdenum film (thickness: about 100 nm) is formed by, for example, a sputtering method, the metal film is patterned to form a gate electrode 14a and the like.

[0069] After that, after the first interlayer insulating film 15 is formed by, for example, a plasma CVD method by forming a silicon oxide film (about 100 nm) on the substrate surface on which the gate electrode 14a and the like are formed, and a metal film such as a molybdenum film (thickness: about 100 nm) is formed by, for example, a sputtering method, the metal film is patterned to form a relay electrode 16a and the like.

[0070] Next, on the substrate surface on which the relay electrode 16a and the like are formed, a semiconductor film of InGaZnO4or the like (thickness of about 30 nm) is formed by, for example, a sputtering method, and annealing treatment is performed, and then the semiconductor film is patterned to form the second semiconductor layer 17a.

[0071] Further, on the substrate surface on which the second semiconductor layer 17a is formed, a silicon oxide film (thickness of about 300 nm) is formed by, for example, a plasma CVD method, and then a metal film of a molybdenum film (thickness of about 100 nm) or the like is formed by a sputtering method, and the second gate insulating film 18a and the gate electrode 19a and the like are formed by patterning the stacked film.

[0072] Subsequently, a silicon oxide film (about 150 nm) is formed on the substrate surface on which the second gate insulating film 18a and the gate electrode 19a and the like are formed by, for example, a plasma CVD method, and thus the second interlayer insulating film 20 is formed.

[0073] Next, after a contact hole is appropriately formed in the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20, a metal stacked film is formed by, for example, a sputtering method, in which a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 400 nm), and a titanium film (thickness of about 50 nm) and the like are sequentially formed, and then the metal stacked film is patterned to form the first terminal electrode 21a and the second terminal electrode 21b and the like.

[0074] Further, on the substrate surface on which the first terminal electrode 21a and the second terminal electrode 21b and the like are formed, a photosensitive resin film of a polyimide-based (thickness of about 2 μm) is applied by, for example, a slit coating method or the like, and then a planarization film 22a is formed by performing pre-baking, exposure, development, and post-baking on the applied film.

[0075] As described above, the TFT layer 30a can be formed.

[0076]

[0077] ​On the planarization film 24 of the TFT layer 30a formed in the TFT layer forming step described above, a first electrode 31a, an edge cover 32a, an organic EL layer 33 (a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, an electron injection layer 5), and a second electrode 34 are formed using a known method, and an organic EL element layer 40 is formed. Here, before the organic EL layer 33 is formed, in the non-display region N, a resist pattern of a prescribed shape is formed, and after the laminated inorganic insulating film of the base coat film 11, the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20 exposed from the resist pattern is etched, the resin substrate layer 10 exposed from the laminated inorganic insulating film is ashed, and thus a first recessed portion Ca and a second recessed portion Cb are formed.

[0078] <Sealing film forming step>

[0079] On the organic EL element layer 40 formed by the organic EL element layer forming step described above, a sealing film 45 (a first inorganic sealing film 41, an organic sealing film 42, a second inorganic sealing film 43) is formed using a known method. After that, a protective sheet (not shown) is attached to the surface of the substrate on which the sealing film 45 is formed, and laser light is irradiated from the glass substrate side of the resin substrate layer 10, and thus the glass substrate is peeled from the lower surface of the resin substrate layer 10, and further, a protective sheet (not shown) is attached to the lower surface of the resin substrate layer 10 from which the glass substrate has been peeled.

[0080] <Through-hole forming step>

[0081] In the non-display region N of the resin substrate layer 10 from which the glass substrate has been peeled by the sealing film forming step described above, a through-hole H is formed, for example, by irradiating laser light while scanning the laser light in a ring shape. After that, when the organic EL display device 50a on which the through-hole H is formed is fixed, for example, to the inside of a housing, an electronic element 60 such as a camera or a fingerprint sensor is disposed on the back surface side of the through-hole H.

[0082] As described above, the organic EL display device 50a of the present embodiment can be manufactured.

[0083] As described above, according to the organic EL display device 50a of the present embodiment, since the first light shielding film 31b is provided in the non-display region N in a manner of surrounding the side wall of the through-hole H and covering the peripheral end portion of the planarization film 22a, the light L from the outside incident from the through-hole H can be blocked by the first light shielding film 31b. Thus, the light L from the outside is less likely to be incident to the display region D, and thus the light L from the outside can be less likely to reach the TFTs 9a to 9g of each sub-pixel P provided in the display region D. Therefore, the decrease in the TFT characteristics caused by the light L incident from the through-hole H of the non-display region N provided inside the display region D can be suppressed. In addition, the TFTs 9a to 9g of each sub-pixel P provided in the display region D include the second TFTs (initialization TFT 9a, compensation TFT 9b, anode discharge TFT 9g) using the oxide semiconductor which is not resistant to light, in addition to the first TFTs (writing TFT 9c, driving TFT 9d, power supply TFT 9e, light emission control TFT 9f) using polycrystalline silicon, and thus the decrease in the TFT characteristics caused by the light L incident from the through-hole H can be particularly suppressed.

[0084] In addition, according to the organic EL display device 50a of the present embodiment, since the second light shielding film 31c is provided in the non-display region N in a manner of surrounding the through-hole H and covering the first resin layer 22b, the light L from the outside incident from the through-hole H can be blocked by the second light shielding film 31c. Thus, the light L from the outside is less likely to be incident to the display region D, and thus the light L from the outside can be less likely to reach the TFTs 9a to 9g of each sub-pixel P provided in the display region D. Therefore, the decrease in the TFT characteristics caused by the light L incident from the through-hole H of the non-display region N provided inside the display region D can be further suppressed.

[0085] In addition, according to the organic EL display device 50a of the present embodiment, since the first light shielding film 31b and the second light shielding film 31c are covered by the edge cover 32a and the second resin layer 32b, the characteristics of the first light shielding film 31b and the second light shielding film 31c can be suppressed from being deteriorated.

[0086] <Second Embodiment>

[0087] Figure 9 A second embodiment of a display device to which the present application is applied will be described. Here, Figure 7 is a cross-sectional view of a non-display region N of an organic EL display device 50b of the present embodiment, and is a view corresponding to Figure 1 described in the above first embodiment. Further, in each of the following embodiments, the same parts as Figure 8 Figure 9 the same parts as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0088] In the first embodiment described above, the organic EL display device 50a in which the peripheral end surface of the base coating film 11 is formed flush with the peripheral end surfaces of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20 in the non-display region N was exemplified, but in the present embodiment, the organic EL display device 50b in which the peripheral end surface of the base coating film 11 protrudes beyond the peripheral end surfaces of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20 in the non-display region N is exemplified.

[0089] The organic EL display device 50b has a display region D in which an island-shaped non-display region N is provided inside and a frame region F provided around the display region D, like the organic EL display device 50a of the first embodiment described above.

[0090] In addition, the organic EL display device 50b has a resin substrate layer 10, a TFT layer 30a provided on the resin substrate layer 10, an organic EL element layer 40 provided on the TFT layer 30a, and a sealing film 45 provided so as to cover the organic EL element layer 40, like the organic EL display device 50a of the first embodiment described above. In the organic EL display device 50b, the structures of the display region D and the frame region F are substantially the same as those of the organic EL display device 50a of the first embodiment described above.

[0091] In addition, the organic EL display device 50b has a resin substrate layer 10, a TFT layer 30a provided on the resin substrate layer 10, an organic EL element layer 40 provided on the TFT layer 30a, and a sealing film 45 provided so as to cover the organic EL element layer 40, like the organic EL display device 50a of the first embodiment described above. In the organic EL display device 50b, the structures of the display region D and the frame region F are substantially the same as those of the organic EL display device 50a of the first embodiment described above. Figure 9 As shown in FIG. 6, the organic EL display device 50b has a first light-blocking film 31b provided in the non-display region N so as to surround the side wall of the peripheral end portion of the planarization film 22a in a ring shape. In the organic EL display device 50b, the first light-blocking film 31b is provided so as to cover the side wall of the peripheral edge portion of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20, like the organic EL display device 50a of the first embodiment described above. Figure 9 As shown in FIG. 6, the organic EL display device 50b has a first light-blocking film 31b provided in the non-display region N so as to surround the side wall of the peripheral end portion of the planarization film 22a in a ring shape. In the organic EL display device 50b, the first light-blocking film 31b is provided so as to cover the side wall of the peripheral edge portion of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20, like the organic EL display device 50a of the first embodiment described above.

[0092] In addition, the organic EL display device 50b has a resin substrate layer 10, a TFT layer 30a provided on the resin substrate layer 10, an organic EL element layer 40 provided on the TFT layer 30a, and a sealing film 45 provided so as to cover the organic EL element layer 40, like the organic EL display device 50a of the first embodiment described above. In the organic EL display device 50b, the structures of the display region D and the frame region F are substantially the same as those of the organic EL display device 50a of the first embodiment described above. Figure 9 As shown in FIG. 6, the organic EL display device 50b has a first light-blocking film 31b provided in the non-display region N so as to surround the side wall of the peripheral end portion of the planarization film 22a in a ring shape. In the organic EL display device 50b, the first light-blocking film 31b is provided so as to cover the side wall of the peripheral edge portion of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20, like the organic EL display device 50a of the first embodiment described above. Figure 9 As shown in FIG. 6, the organic EL display device 50b has a first light-blocking film 31b provided in the non-display region N so as to surround the side wall of the peripheral end portion of the planarization film 22a in a ring shape. In the organic EL display device 50b, the first light-blocking film 31b is provided so as to cover the side wall of the peripheral edge portion of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20, like the organic EL display device 50a of the first embodiment described above. Figure 9As shown, a base inorganic layer MM is provided on the resin substrate layer 10 side of the inner side barrier wall Wc. Further, as shown in Figure 9 As shown, the base inorganic layer MM has: a base inorganic lower layer 13a formed in the same layer as the first gate insulating film 13 by the same material as the first gate insulating film 13, which is sequentially stacked on the base coating film 11; a base inorganic middle layer 15a formed in the same layer as the first interlayer insulating film 15 by the same material as the first interlayer insulating film 15; and a base inorganic upper layer 20a formed in the same layer as the second interlayer insulating film 20 by the same material as the second interlayer insulating film 20. Further, as shown in Figure 9 As shown, the second light shielding film 31c is provided so as to cover the side walls of the peripheral edge portions of the through hole H side (right side in the drawing) and the display region D side (left side in the drawing) on the base inorganic layer MM.

[0093] Further, the organic EL display device 50b has, in the non-display region N, the first recessed portion Ca provided in a ring shape concentrically on the outside of the inner side barrier wall Wc so as to surround the through hole H, similarly to the organic EL display device 50a of the first embodiment. Here, as shown in Figure 9 As shown, the first recessed portion Ca is provided between the first light shielding film 31b and the second light shielding film 31c, and the base coating film 11 is in a roof shape protruding so as to reach the upper layer portion of the resin substrate layer 10, and is in an inverted taper shape in which the width is narrowed toward the opening (upper side in the drawing).

[0094] Further, the organic EL display device 50b has, in the non-display region N, a plurality of second recessed portions Cb provided in a ring shape concentrically on the inside of the inner side barrier wall Wc so as to surround the through hole H, similarly to the organic EL display device 50a of the first embodiment. Here, as shown in Figure 6 As shown, the second recessed portion Cb is provided between the second light shielding film 31c and the through hole H (see Figure 9 ), and the base coating film 11 is in a roof shape protruding so as to reach the upper layer portion of the resin substrate layer 10, and is in an inverted taper shape in which the width is narrowed toward the opening (upper side in the drawing).

[0095] In the organic EL display device 50b configured as described above, similarly to the organic EL display device 50a of the first embodiment, in each sub-pixel P, the organic EL element 35 emits light with a luminance corresponding to a driving current, and image display is performed. Further, the organic EL display device 50b has the first light shielding film 31b and the second light shielding film 31c provided so as to surround the through hole H in the non-display region N, and thus the light L from the outside incident from the through hole H is interrupted by the first light shielding film 31b and the second light shielding film 31c, as shown in Figure 10 As shown, the structure in which it is difficult for the light L from the outside to be incident on the display region D is obtained.

[0096] The organic EL display device 50b of this embodiment can be manufactured by also locally etching the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20 of the non-display region N in the TFT layer formation step in the manufacturing method of the organic EL display device 50a of the first embodiment when forming the contact hole thereon.

[0097] As described above, according to the organic EL display device 50b of this embodiment, the first light shielding film 31b is provided in the non-display region N so as to surround the through hole H and cover the side wall of the peripheral end portion of the planarization film 22a, and thus the light L from the outside incident from the through hole H can be blocked by the first light shielding film 31b. Thus, the light L from the outside is less likely to be incident on the display region D, and thus the light L from the outside is less likely to reach the TFTs 9a to 9g of each sub-pixel P provided in the display region D. Therefore, the reduction in the characteristics of the TFTs caused by the light L incident from the through hole H of the non-display region N provided inside the display region D can be suppressed.

[0098] In addition, according to the organic EL display device 50b of this embodiment, the second light shielding film 31c is provided in the non-display region N so as to surround the through hole H and cover the first resin layer 22b, and thus the light L from the outside incident from the through hole H can be blocked by the second light shielding film 31c. Thus, the light L from the outside is less likely to be incident on the display region D, and thus the light L from the outside is less likely to reach the TFTs 9a to 9g of each sub-pixel P provided in the display region D. Therefore, the reduction in the characteristics of the TFTs caused by the light L incident from the through hole H of the non-display region N provided inside the display region D can be further suppressed.

[0099] In addition, according to the organic EL display device 50b of this embodiment, since the first light shielding film 31b and the second light shielding film 31c are covered by the edge cover 32a and the second resin layer 32b, the characteristics of the first light shielding film 31b and the second light shielding film 31c can be suppressed from being deteriorated.

[0100] In addition, according to the organic EL display device 50b of this embodiment, since the first light shielding film 31b is provided in a stepped shape so as to cover the side wall of the peripheral edge portion of the first gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 20, the light shielding effect in the lateral direction by the first light shielding film 31b can be improved.

[0101] Further, according to the organic EL display device 50b of the present embodiment, the second light-shielding film 31c is provided in a stepped shape so as to cover the side walls of the peripheral edge portions of the through holes H and the display region D side on the base inorganic layer MM, and thus the light-shielding effect of the second light-shielding film 31c in the lateral direction can be improved.

[0102] "Third Embodiment"

[0103] Figure 11 and Figure 10 A second embodiment of a display device to which the present application is applied will be described. Here, Figure 3 is a cross-sectional view of a display region D of an organic EL display device 50c of the present embodiment, and is a view corresponding to Figure 11 described in the above first embodiment. Further, Figure 7 is a cross-sectional view of a non-display region N of the organic EL display device 50c, and is a view corresponding to Figure 10 described in the above first embodiment.

[0104] In the above first embodiment, the organic EL display device 50a in which the first light-shielding film 31b and the second light-shielding film 31c are formed in the same layer by the same material as the first electrode 31a of the organic EL element layer 40 was exemplified, but in the present embodiment, the organic EL display device 50c in which the first light-shielding film 23b and the second light-shielding film 23c are formed in the same layer by the same material as the relay wiring layer 23a of the TFT layer 30c is exemplified.

[0105] The organic EL display device 50c has a display region D in which an island-shaped non-display region N is provided inside and a frame region F provided around the display region D, similarly to the organic EL display device 50a of the above first embodiment.

[0106] Further, as shown in Figure 10 , the organic EL display device 50c has: a resin substrate layer 10; a TFT layer 30c provided on the resin substrate layer 10; an organic EL element layer 40 provided on the TFT layer 30c; and a sealing film 45 provided so as to cover the organic EL element layer 40.

[0107] As shown in Figure 4 , the TFT layer 30c has: a base coating film 11 provided on the resin substrate layer 10; an initialization TFT 9a (see Figure 4 ), a compensation TFT 9b (see Figure 4 ), a writing TFT 9c (see Figure 4 ), a driving TFT 9d, and a power supply TFT 9e (see Figure 11), light emission control TFT9f, anode discharge TFT9g and capacitor 9h; a first planarization film 22a provided on each TFT9a to 9g and capacitor 9h; a relay wiring layer 23a provided on the first planarization film 22a; a second planarization film 24 provided on the relay wiring layer 23a. Figure 11 As shown, the relay wiring layer 23a is configured to electrically connect the second terminal electrode 21c of the light emission control TFT 9f to the first electrode 31a of the organic EL element 35. Furthermore, the second planarizing film 24 has a flat surface in the display area D and is formed of an organic resin material such as a polyimide resin or acrylic resin, or an organic insulating film such as a polysiloxane-based SOG material. Similarly to the TFT layer 30a of the first embodiment, the TFT layer 30c is provided with a plurality of gate lines 14g, a plurality of light emission control lines 14e, a plurality of second initialization power supply lines 19i, a plurality of source lines 21h, and a plurality of power supply lines 21i.

[0108] The structure of the frame region F of the organic EL display device 50 c is substantially the same as the structure of the frame region F of the organic EL display device 50 a according to the first embodiment.

[0109] In addition, if Figure 11 As shown, the organic EL display device 50c includes a first light shielding film 23b provided in a ring shape so as to cover the sidewall of the peripheral end of the planarization film 22a in the non-display area N. Here, the first light shielding film 23b is formed of the same material as the relay wiring layer 23a and is formed in the same layer.

[0110] In addition, the organic EL display device 50c is similar to the organic EL display device 50a of the first embodiment. Figure 11 As shown, in the non-display area N, an inner barrier wall Wc is provided in an annular shape so as to surround the through hole H and overlap the inner peripheral end of the organic sealing film 42. Figure 11 As shown, the inner blocking wall Wc includes: a first resin layer 22b, which is formed on the same layer by the same material as the planarizing film 22a; a second shading film 23c, which is arranged in a manner covering the first resin layer 22b and is formed on the same layer by the same material as the relay wiring layer 23a; and a second resin layer 32b, which is arranged in a manner covering the second shading film 23c and is formed on the same layer by the same material as the edge cover 32a.

[0111] In addition, the organic EL display device 50c is similar to the organic EL display device 50a of the first embodiment. Figure 11 As shown, in the non-display area N, a first recessed portion Ca is provided in an annular shape concentrically provided on the outside of the inner barrier wall Wc so as to surround the through hole H.

[0112] In addition, the organic EL display device 50c is configured in the same manner as the organic EL display device 50a of the first embodiment, as shown in FIG. 1, and has the first light-shielding film 23b and the second light-shielding film 23c provided in the non-display region N in a manner of surrounding the through-hole H. Figure 11 As shown in FIG. 1, the organic EL display device 50c has the second light-shielding film 23c provided in the non-display region N in a manner of surrounding the through-hole H.

[0113] In the organic EL display device 50c configured as described above, in the same manner as the organic EL display device 50a of the first embodiment, in each sub-pixel P, the organic EL element 35 emits light with a luminance corresponding to a driving current, and image display is performed. In addition, the organic EL display device 50c has the first light-shielding film 23b and the second light-shielding film 23c provided in the non-display region N in a manner of surrounding the through-hole H, and thus the light L from the outside incident from the through-hole H is blocked by the first light-shielding film 23b and the second light-shielding film 23c, as shown in FIG. 1, and the structure in which the light L from the outside is difficult to be incident to the display region D is obtained. ​ In addition, the organic EL display device 50c is configured in the same manner as the organic EL display device 50a of the first embodiment, as shown in FIG. 1, and has the first light-shielding film 23b and the second light-shielding film 23c provided in the non-display region N in a manner of surrounding the through-hole H.

[0114] The organic EL display device 50c of the present embodiment can be manufactured by, in the TFT layer forming step in the manufacturing method of the organic EL display device 50a of the first embodiment, after the (first) planarization film 22a is formed, forming a metal laminated film on the substrate surface on which the first planarization film 22a is formed, for example, by sequentially forming a titanium film, an aluminum film, and a titanium film, and the like by a sputtering method, and then patterning the metal laminated film to form the relay wiring layer 23a and the like, and then, on the substrate surface on which the relay wiring layer 23a and the like are formed, applying a photosensitive resin film of a polyimide-based material by a slit coating method or the like, and then performing pre-baking, exposure, development, and post-baking on the applied film, thereby forming the second planarization film 24.

[0115] As described above, according to the organic EL display device 50c of the present embodiment, since the first light-shielding film 23b is provided in the non-display region N in a manner of surrounding the through-hole H and covering the side wall of the peripheral end portion of the planarization film 22a, the light L from the outside incident from the through-hole H can be blocked by the first light-shielding film 23b. Thus, the light L from the outside is difficult to be incident to the display region D, and thus the light L from the outside can be made difficult to reach the TFTs 9a to 9g of each sub-pixel P provided in the display region D. Therefore, it is possible to suppress the reduction in the characteristics of the TFTs caused by the light L incident from the through-hole H of the non-display region N provided inside the display region D.

[0116] Furthermore, according to the organic EL display device 50c of this embodiment, since the second light-shielding film 23c is provided in the non-display region N so as to surround the through-hole H and cover the first resin layer 22b, the second light-shielding film 23c can block external light L incident through the through-hole H. This makes it difficult for the external light L to enter the display region D, and thus can prevent the external light L from reaching the TFTs 9a to 9g of the sub-pixels P provided in the display region D. Consequently, it is possible to further suppress degradation of TFT characteristics caused by light L incident from the through-hole H in the non-display region N provided within the display region D.

[0117] Furthermore, according to the organic EL display device 50c of this embodiment, since the first and second light shielding films 23b and 23c are covered with the second planarizing film 24 and the second resin layer 32b, degradation of the characteristics of the first and second light shielding films 23b and 23c can be suppressed.

[0118] Furthermore, according to the organic EL display device 50c of this embodiment, since the first light-shielding film 23b and the second light-shielding film 23c are thicker than the first electrode 31a, the light-shielding effect can be further improved compared to the first light-shielding film 31b and the second light-shielding film 31c of the organic EL display device 50a of the first embodiment described above. Furthermore, the first light-shielding film 31b and the second light-shielding film 31c of the organic EL display device 50a of the first embodiment described above can be respectively arranged on top of the first light-shielding film 23b and the second light-shielding film 23c of the organic EL display device 50c of this embodiment to further improve the light-shielding effect.

[0119] Other Implementation Methods

[0120] Furthermore, in the above-described embodiments, the organic EL display devices 50a, 50b, and 50c are exemplified. However, the present invention may also have a structure combining the constituent elements of the organic EL display devices 50a, 50b, and 50c of the respective embodiments.

[0121] In the above embodiments, an organic EL layer having a five-layer stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is exemplified. However, the organic EL layer may also have a three-layer stacked structure of, for example, a hole injection layer serving as a hole transport layer, a light-emitting layer, and an electron transport layer serving as an electron injection layer.

[0122] In addition, in the above embodiments, an organic EL display device with the first electrode as the anode and the second electrode as the cathode is illustrated, but the present invention can also be applied to an organic EL display device in which the stacked structure of the organic EL layer is reversed and the first electrode is the cathode and the second electrode is the anode.

[0123] In addition, in each of the above embodiments, an organic EL display device is exemplified as the display device, but the present application can be applied to a display device having a plurality of light emitting elements driven by a current, for example, a display device having a QLED (Quantum-dot Light Emitting Diode) which is a light emitting element using a quantum dot containing layer.

[0124] Industrial Applicability

[0125] As described above, the present application is useful for a flexible display device.

[0126] Explanation of Reference Signs

[0127] Ca first recess

[0128] Cb second recess

[0129] D display region

[0130] Gi inner side groove

[0131] H through hole

[0132] M base inorganic layer M

[0133] N non-display region

[0134] P sub-pixel

[0135] Wa first outer side barrier wall

[0136] Wb second outer side barrier wall

[0137] Wc inner side barrier wall

[0138] 9a initialization TFT (second thin film transistor)

[0139] 9b compensation TFT (second thin film transistor)

[0140] 9c writing TFT (first thin film transistor)

[0141] 9d driving TFT (first thin film transistor)

[0142] 9e power supply TFT (first thin film transistor)

[0143] 9f light emission control TFT (first thin film transistor)

[0144] 9g anode discharge TFT (second thin film transistor)

[0145] 10 resin substrate layer

[0146] 13 first gate insulating film

[0147] 15 first interlayer insulating film

[0148] 20 second interlayer insulating film

[0149] 22a (first) planarizing film

[0150] 22b first resin layer

[0151] 23a relay wiring layer

[0152] 30a, 30c TFT layer (thin film transistor layer)

[0153] 31a first electrode

[0154] 31b first light shielding film

[0155] 31ba inner first light shielding film

[0156] 31bb outer first light shielding film

[0157] 31c second light shielding film

[0158] 32a edge cover

[0159] 32b second resin layer

[0160] 33 organic EL layer (organic electroluminescent layer, light-emitting functional layer)

[0161] 35 organic EL element layer (light-emitting element layer)

[0162] 41 first inorganic sealing film

[0163] 42 organic sealing film

[0164] 43 second inorganic sealing film

[0165] 45 sealing film

[0166] 50a, 50aa, 50b, 50c organic EL display device

[0167] 60 electronic element

Claims

1. A display device, characterized by comprising: Possessing: a resin substrate layer; a thin film transistor layer provided on the resin substrate layer, sequentially laminating a gate insulating film composed of an inorganic insulating film and an interlayer insulating film, and a planarization film composed of an organic insulating film; and a light emitting element layer provided on the thin film transistor layer, sequentially laminating a plurality of first electrodes, a shared edge cover, a plurality of light emitting functional layers, and a shared second electrode corresponding to a plurality of subpixels constituting a display region; the thin film transistor layer possesses a thin film transistor provided for each of the subpixels on the resin substrate layer side of the planarization film, an island-shaped non-display region is provided inside the display region, a through hole penetrating in the thickness direction of the resin substrate layer is provided in the non-display region, a first light shielding film is provided in the non-display region at the peripheral edge portion of the planarization film in a manner to cover the side wall of the peripheral edge portion; the first light shielding film is covered by the edge cover.

2. The display device according to claim 1, wherein The first light shielding film is provided to cover the side wall of the peripheral edge portion of the gate insulating film and the interlayer insulating film.

3. The display device according to claim 1 or 2, wherein The first light shielding film is formed as the same layer from the same material as the respective first electrodes.

4. The display device according to claim 1 or 2, wherein the thin film transistor layer possesses a wiring layer on the light emitting element layer side of the planarization film, the first light shielding film is formed as the same layer from the same material as the wiring layer.

5. The display device according to claim 1, wherein Possessing: a sealing film provided in a manner to cover the light emitting element layer, and sequentially laminating a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film; an outer side barrier wall provided in a frame region around the display region in a manner to surround the display region, and overlapping with the outer peripheral end portion of the organic sealing film; and an inner side barrier wall provided in the non-display region in a manner to surround the through hole, and overlapping with the inner peripheral end portion of the organic sealing film, the inner side barrier wall possesses a first resin layer formed as the same layer from the same material as the planarization film, a second light shielding film is provided on the first resin layer in a manner to cover the first resin layer.

6. The display device according to claim 5, wherein The second light shielding film is formed as the same layer from the same material as the edge cover.

7. The display device according to claim 5, wherein A base inorganic layer is provided on the resin substrate layer side of the first resin layer, formed as the same layer from the same material as the gate insulating film and the interlayer insulating film, the second light shielding film is provided in a manner to cover the side wall of the peripheral edge portion of the through hole side and the display region side in the base inorganic layer.

8. The display device according to claim 5, wherein The second light shielding film is formed as the same layer from the same material as the respective first electrodes.

9. The display device according to claim 5, wherein the thin film transistor layer possesses a wiring layer on the light emitting element layer side of the planarization film, the second light shielding film is formed as the same layer from the same material as the wiring layer.

10. The display device according to claim 5, wherein A first recess is provided between the first light shielding film and the second light shielding film in a manner to surround the through hole and reach the upper layer portion of the resin substrate layer, in a manner to narrow toward the opening width of an inverted taper shape.

11. The display device according to any one of claims 5 to 10, wherein A second recess is provided in a manner of narrowing toward an opening width in a reverse tapered shape between the second light-shielding film and the through-hole, and reaching an upper layer portion of the resin substrate layer.

12. The display device according to claim 1, wherein The thin film transistor includes a first thin film transistor and a second thin film transistor, The first thin film transistor includes a first semiconductor layer formed of polycrystal silicon, The second thin film transistor includes a second semiconductor layer formed of oxide semiconductor.

13. The display device of claim 1, wherein, The thin film transistor includes a thin film transistor including a semiconductor layer formed of oxide semiconductor.

14. The display device of claim 1, wherein Each of the first electrodes has a film thickness of 150 nm or more.

15. The display device of claim 1, wherein, In the non-display region, an inner groove is formed on the planarization film in a manner of penetrating the planarization film and surrounding the through-hole, The first light-shielding film includes an inner first light-shielding film provided in a manner of covering a side wall of a peripheral portion of the planarization film, and an outer first light-shielding film provided in a manner of covering the inner groove.

16. The display device of claim 1, wherein An electronic component is provided in the through-hole.

17. The display device of claim 16, wherein, The electronic component is a camera or a fingerprint sensor.

18. The display device of claim 1, wherein, Each of the light-emitting functional layers is an organic electroluminescent layer.

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