A single-carrier photodiode wafer structure

Abstract

The application discloses a single-carrier photodiode wafer structure, which comprises a first contact layer, a barrier layer, an absorption layer, a first interval layer, a second interval layer, a third interval layer, a collection layer, a sub-collection layer, a first stop layer, a second contact layer, a second stop layer and a substrate arranged in sequence from top to bottom; the substrate is made of indium phosphide-based silicon material; the first contact layer, the barrier layer, the absorption layer, the first interval layer, the second interval layer and the third interval layer are doped with zinc material; the collection layer, the sub-collection layer, the first stop layer, the second contact layer and the stop layer are doped with selenium material; the doping concentration of the selenium material is 8E15-8E19 / cm ‑3 The selenium is used to replace silicon, and high doping is carried out on a plurality of semiconductor wafer layers, so that the difficulty of single-carrier photodiode wafer manufacturing process is reduced, the cost is lowered, and efficient, fast and low-cost sources are provided for large-scale industrial application of the single-carrier photodiode.

Description

Technical Field

[0001] This invention relates to the field of communication-related terahertz chip technology, and more particularly to a single-row carrier photodiode wafer structure. Background Technology

[0002] High-power, high-bandwidth single-row carrier photodiodes are one of the core components in terahertz communication systems. Single-row carrier photodiodes have attracted considerable attention due to their excellent saturation performance and high-speed capabilities.

[0003] The wafer structure of a single-row carrier photodiode includes an upper contact layer, barrier layer, transition layer, absorber layer, cliff layer, collector layer, and lower contact layer, typically achieved through a single-stage epitaxy using metal-organic vapor deposition (MOCVD). The composition and doping of each layer in a single-row carrier photodiode significantly impact its performance. High-performance single-row carrier detectors can be obtained by designing and optimizing the epitaxial structures (including the absorber, barrier, cliff, and collector layers). Currently, most designs focus on improving the thickness and materials of the absorber, cliff, and collector layers. However, the semiconductor material structure of single-row carrier photodiodes is extremely complex, and the use of group III-IV materials leads to high processing costs and significant fabrication difficulties.

[0004] To address the aforementioned issues, it is necessary to improve the existing single-row carrier photodiodes. Summary of the Invention

[0005] This invention overcomes the shortcomings of the prior art and provides a single-row carrier photodiode wafer structure. This invention uses selenium to replace silicon and performs high doping on five semiconductor wafer layers: a collection layer, a sub-collection layer, a first stop layer, a second contact layer, and a second stop layer. This reduces the difficulty of fabricating single-row carrier photodiode wafers and lowers costs. It also solves the problems of high process costs and difficult processing caused by using III-IV group materials.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows: a single-row carrier photodiode wafer structure, characterized in that it comprises, from top to bottom, a first contact layer, a barrier layer, an absorption layer, a first spacer layer, a second spacer layer, a third spacer layer, a collection layer, a sub-collection layer, a first stop layer, a second contact layer, a second stop layer, and a substrate. The substrate is indium phosphide-based silicon material; the first contact layer, the barrier layer, the absorption layer, the first spacer layer, the second spacer layer, and the third spacer layer are doped with zinc material; The collecting layer, the sub-collecting layer, the first stopping layer, the second contact layer, and the second stopping layer are doped with selenium material; the doping concentration of the selenium material is 8E15 to 8E19. .

[0007] In a preferred embodiment of the present invention, the doping concentration of the selenium material in the collecting layer, the sub-collecting layer, the first stopping layer and the second contact layer increases sequentially.

[0008] In a preferred embodiment of the present invention, the doping concentration of the selenium material in the collecting layer is 8E15 to 8E16. The doping concentration of the selenium material in the sub-collector layer is 8E16 to 8E17. The doping concentration of the selenium material in the first stop layer and the second stop layer is 8E17 to 8E18. The doping concentration of the selenium material in the second contact layer is 8E18 to 8E19. .

[0009] In a preferred embodiment of the present invention, the thicknesses of the first stop layer and the second stop layer are equal to the doping concentration of the selenium material.

[0010] In a preferred embodiment of the present invention, the first contact layer, the absorption layer, the first spacer layer, the second spacer layer, the third spacer layer, the first stop layer, and the second stop layer are all InGaAs layers, and the barrier layer, the collection layer, the sub-collection layer, the second contact layer, and the substrate are all InP layers.

[0011] In a preferred embodiment of the present invention, the doping concentration of the zinc material in the first contact layer is 1E19 to 2E19. The doping concentration of the zinc material in the barrier layer is 1E19 to 2E19. The doping concentration of the zinc material in the absorption layer is 1E18 to 4E18. The doping concentration of the zinc material in the first spacer layer is 1E17 to 3E18. The doping concentration of the zinc material in the second spacer layer is 1E15 to 4E15. The doping concentration of the zinc material in the third spacer layer is 1E17 to 3E18. .

[0012] In a preferred embodiment of the present invention, the thicknesses of the first spacer layer, the second spacer layer, and the third spacer layer are 100–200 mm. .

[0013] In a preferred embodiment of the present invention, the thickness of the second contact layer is greater than that of the first contact layer.

[0014] In a preferred embodiment of the present invention, the doping concentration of the zinc material in the first contact layer and the barrier layer is equal.

[0015] In a preferred embodiment of the present invention, the semiconductor type of each layer is n+ type, n type, p type or p+ type.

[0016] In a preferred embodiment of the present invention, the elemental composition ratio of each layer can be adjusted according to changes in the process line.

[0017] This invention addresses the shortcomings of the prior art and has the following beneficial effects: This invention utilizes selenium to replace silicon and performs high doping on five semiconductor wafer layers: a collection layer, a sub-collection layer, a first stop layer, a second contact layer, and a second stop layer. This reduces the difficulty of fabricating single-row carrier photodiode wafers and lowers costs. It solves the problems of high process costs and difficult processing caused by using III-IV group materials, providing an efficient, fast, and low-cost source for the large-scale industrial application of single-row carrier photodiodes. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Figure 1 This is a schematic diagram of a single-row carrier photodiode wafer structure according to a preferred embodiment of the present invention; In the figure: 1. First contact layer; 2. Barrier layer; 3. Absorber layer; 4. First spacer layer; 5. Second spacer layer; 6. Third spacer layer; 7. Collector layer; 8. Subcollector layer; 9. First stop layer; 10. Second contact layer; 11. Second stop layer; 12. Substrate. Detailed Implementation

[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein. Therefore, the scope of protection of the invention is not limited to the specific embodiments disclosed below.

[0021] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the scope of protection of this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Those skilled in the art can understand the specific meaning of the above terms in this application through specific circumstances.

[0022] like Figure 1 The diagram shows a schematic of a single-row carrier photodiode wafer structure according to the present invention. The single-row carrier photodiode wafer structure includes, from top to bottom, a first contact layer 1, a barrier layer 2, an absorption layer 3, a first spacer layer 4, a second spacer layer 5, a third spacer layer 6, a collection layer 7, a sub-collection layer 8, a first stop layer 9, a second contact layer 10, a second stop layer 11, and a substrate 12.

[0023] The substrate 12 is made of indium phosphide-based silicon. The first contact layer 1, the absorber layer 3, the first spacer layer 4, the second spacer layer 5, the third spacer layer 6, the first stop layer 9, and the second stop layer 11 are all P-type doped InGaAs layers, while the barrier layer 2, the collector layer 7, the sub-collector layer 8, the second contact layer 10, and the substrate 12 are all N-type doped InP layers.

[0024] The thicknesses of the first spacer layer 4, the second spacer layer 5, and the third spacer layer 6 are 100–200 mm. .

[0025] The first contact layer 1, barrier layer 2, absorber layer 3, first spacer layer 4, second spacer layer 5, and third spacer layer 6 are doped with zinc. The zinc doping concentration in the first contact layer 1 is 1E19 to 2E19. The zinc doping concentration in barrier layer 2 is 1E19 to 2E19. The zinc doping concentration in the absorption layer 3 is 1E18 to 4E18. The zinc doping concentration in the first spacer layer 4 is 1E17 to 3E18. The zinc doping concentration in the second spacer layer 5 is 1E15 to 4E15. The zinc doping concentration in the third spacer layer 6 is 1E17 to 3E18. .

[0026] Collector layer 7, sub-collector layer 8, first stop layer 9, second contact layer 10, and second stop layer are highly doped with selenium material; the doping concentration of selenium material is 8E15 to 8E19. The doping concentrations of the collecting layer 7, sub-collecting layer 8, first stop layer 9, and second contact layer 10 increase sequentially. The zinc doping concentrations in the first contact layer 1 and barrier layer 2 are equal. The thickness and doping concentration of the first stop layer 9 and second stop layer 11 are both equal.

[0027] This invention utilizes selenium to replace silicon and performs high doping on five semiconductor wafer layers: a collector layer 7, a sub-collector layer 8, a first stop layer 9, a second contact layer 10, and a second stop layer. This solves the problems of high process cost and difficult processing caused by using III-IV group materials.

[0028] The selenium doping concentration in the collection layer 7 is 8E15 to 8E16. The selenium doping concentration in sub-collector layer 8 is 8E16–8E17. The selenium doping concentration in the first stop layer 9 and the second stop layer 11 is 8E17 to 8E18. The selenium doping concentration in the second contact layer 10 is 8E18 to 8E19. .

[0029] The second contact layer 10 has a greater thickness than the first contact layer 1.

[0030] The elemental composition ratio of each layer can be adjusted according to changes in the process line. The semiconductor type of each layer is n+, n-type, p-type, or p+-type. Optionally, the semiconductor type of each layer can be determined based on simulation results.

[0031] Preferably, the first contact layer 1 is an InGaAs layer with a thickness of 500 nm. The zinc doping concentration is 1E19. .

[0032] Preferably, the barrier layer 2 is an InP layer with a thickness of 200 μm. The zinc doping concentration is 1E19. .

[0033] Preferably, the absorber layer 3 is an InGaAs layer with a thickness of 2000 nm. The zinc doping concentration is 3E18. .

[0034] Preferably, the first spacer layer 4 is an InGaAs layer with a thickness of 100 μm. The zinc doping concentration is 1E18. .

[0035] Preferably, the second spacer layer 5 is an InGaAs layer with a thickness of 130 nm. The zinc doping concentration is 3E15. .

[0036] Preferably, the third spacer layer 6 is an InGaAs layer with a thickness of 100 μm. The zinc doping concentration is 1E18. .

[0037] Preferably, the collection layer 7 is an InP layer with a thickness of 3000 μm. The selenium doping concentration is 8E15. .

[0038] Preferably, the sub-collection layer 8 is an InP layer with a thickness of 500 μm. The selenium doping concentration is 8E17. .

[0039] Preferably, the first stop layer 9 is an InGaAs layer with a thickness of 200 nm. The selenium doping concentration is 8E18. .

[0040] Preferably, the second contact layer 10 is an InP layer with a thickness of 500 μm. The selenium doping concentration is 8E19. .

[0041] Preferably, the second stop layer 11 is an InGaAs layer with a thickness of 200 nm. The selenium doping concentration is 8E18. .

[0042] Based on the preferred embodiments of the present invention described above, those skilled in the art can make various changes and modifications without departing from the inventive concept. The technical scope of this invention is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A single-row carrier photodiode wafer structure, characterized in that, It includes, from top to bottom, a first contact layer, a barrier layer, an absorption layer, a first spacer layer, a second spacer layer, a third spacer layer, a collection layer, a sub-collection layer, a first stop layer, a second contact layer, a second stop layer, and a substrate; The substrate is indium phosphide-based silicon material; the first contact layer, the barrier layer, the absorption layer, the first spacer layer, the second spacer layer, and the third spacer layer are doped with zinc material; The collecting layer, the sub-collecting layer, the first stopping layer, the second contact layer, and the second stopping layer are doped with selenium material; the doping concentration of the selenium material is 8E15 to 8E19. ; The doping concentration of the selenium material in the collecting layer, the sub-collecting layer, the first stopping layer, and the second contact layer increases sequentially. The doping concentration of the selenium material in the collection layer is 8E15 to 8E16. The doping concentration of the selenium material in the sub-collector layer is 8E16 to 8E17. The doping concentration of the selenium material in the first stop layer and the second stop layer is 8E17 to 8E18. The doping concentration of the selenium material in the second contact layer is 8E18 to 8E19. ; The first contact layer, the absorption layer, the first spacer layer, the second spacer layer, the third spacer layer, the first stop layer, and the second stop layer are all InGaAs layers, and the barrier layer, the collection layer, the sub-collection layer, the second contact layer, and the substrate are all InP layers.

2. The single-row carrier photodiode wafer structure according to claim 1, characterized in that: The thicknesses of the first stop layer and the second stop layer are equal to the doping concentration of the selenium material.

3. The single-row carrier photodiode wafer structure according to claim 1, characterized in that: The doping concentration of the zinc material in the first contact layer is 1E19 to 2E19. The doping concentration of the zinc material in the barrier layer is 1E19 to 2E19. The doping concentration of the zinc material in the absorption layer is 1E18 to 4E18. The doping concentration of the zinc material in the first spacer layer is 1E17 to 3E18. The doping concentration of the zinc material in the second spacer layer is 1E15 to 4E15. The doping concentration of the zinc material in the third spacer layer is 1E17 to 3E18. .

4. The single-row carrier photodiode wafer structure according to claim 1, characterized in that: The thicknesses of the first spacer layer, the second spacer layer, and the third spacer layer are 100–200 mm. .

5. The single-row carrier photodiode wafer structure according to claim 1, characterized in that: The second contact layer is thicker than the first contact layer.

6. The single-row carrier photodiode wafer structure according to claim 1, characterized in that: The zinc material has the same doping concentration in the first contact layer and the barrier layer.

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