Method and apparatus for fabricating silicon heterojunction photovoltaic modules

Abstract

The disclosure provides a preparation method and device of a silicon heterojunction photovoltaic module, and relates to the technical field of photovoltaic cells. The method comprises: pretreating a silicon heterojunction cell to generate a laminate; processing the laminate based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed module; transferring the to-be-processed module to an EL detection station and switching a current power supply to a target stabilized power supply; adjusting preset software parameters and performing electrical injection processing on the to-be-processed module to generate a target photovoltaic module. Thus, while the open-circuit voltage and the fill factor of the cell are improved, the short-circuit current is not reduced, thereby keeping the current of the cell string in the module substantially unchanged, maintaining the consistency of the current characteristics of the cell during sorting, maximizing the improvement of the output power, and fully utilizing the existing EL detection equipment. Only a stabilized power supply needs to be added to meet the equipment investment of the electrical injection processing process, thereby realizing the improvement of the module output.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of photovoltaic cells, and particularly relates to a preparation method and device of a silicon heterojunction photovoltaic module. BACKGROUND

[0002] In the prior art, after the preparation of the metal electrode of the silicon heterojunction solar cell, light injection treatment is performed, and the cell efficiency is obviously improved, mainly in the improvement of open-circuit voltage and fill factor. The mechanism is that the Fermi level changes under the action of temperature and light intensity, hydrogen atoms migrate under the action of an electric field and combine with defects on the surface and interface of the cell, so that the density of recombination centers in the cell is reduced, and the passivation effect of the cell is improved.

[0003] However, the process temperature during module preparation, especially during lamination, can reach above 140 DEG C, which will cause a certain degree of reset loss of the performance gain accumulated by the light injection treatment of the cell, and cannot effectively improve the power of the module. SUMMARY

[0004] The present disclosure aims to at least partially solve one of the technical problems in the related art.

[0005] According to a first aspect of the present disclosure, a preparation method of a silicon heterojunction photovoltaic module is provided, comprising:

[0006] preprocessing a silicon heterojunction cell to generate a laminated part;

[0007] processing the laminated part based on a processing strategy corresponding to the type of the laminated part to generate a to-be-processed module;

[0008] transferring the to-be-processed module to an EL detection station and switching a current power supply to a target stabilized power supply;

[0009] adjusting preset software parameters and performing electrical injection treatment on the to-be-processed module to generate a target photovoltaic module.

[0010] According to a second aspect of the present disclosure, a preparation device of a silicon heterojunction photovoltaic module is provided, comprising:

[0011] a first generating module configured to preprocess a silicon heterojunction cell to generate a laminated part;

[0012] a second generating module configured to process the laminated part based on a processing strategy corresponding to the type of the laminated part to generate a to-be-processed module;

[0013] a switching module configured to transfer the to-be-processed module to an EL detection station and switch a current power supply to a target stabilized power supply;

[0014] The third generating module is configured to adjust preset software parameters and perform electrical injection processing on the to-be-processed component to generate a target photovoltaic component.

[0015] The preparation method and device of the silicon heterojunction photovoltaic component provided by the present disclosure have the following beneficial effects:

[0016] In the embodiments of the present disclosure, the silicon heterojunction cell is first pretreated to generate a laminate, then the laminate is processed based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed component, then the to-be-processed component is transferred to an EL detection station and the current power supply is switched to a target stabilized power supply, and finally the preset software parameters are adjusted and electrical injection processing is performed on the to-be-processed component to generate a target photovoltaic component. Thus, by performing electrical injection on the cell, the open-circuit voltage and the fill factor of the cell can be improved without causing a decrease in the short-circuit current, thereby maintaining the current of the cell string in the component substantially unchanged, maintaining the consistency of the current characteristics of the cell during sorting, and maximizing the improvement of the output power. Since only the current power supply needs to be switched to the target stabilized power supply when the to-be-processed component is transferred to the EL detection station for electrical injection processing, the remaining hardware and software devices other than the power supply can be normally used. That is, the electrical injection processing procedure can fully utilize the existing EL detection equipment, and only a stabilized power supply needs to be added to meet the equipment investment of the electrical injection processing procedure, thereby realizing the improvement of the component output, which is low in cost and easy to promote and utilize.

[0017] Additional aspects and advantages of the present disclosure will be made apparent from the following description, which, taken together with the accompanying drawings, describes and illustrates a few embodiments of the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above and / or additional aspects and advantages of the present disclosure will become apparent and be readily appreciated from the following description, taken together with the accompanying drawings, of the embodiments of the present disclosure, wherein:

[0019] Figure 1 A flowchart of a preparation method of a silicon heterojunction photovoltaic component provided by a first embodiment of the present disclosure;

[0020] Figure 2 A flowchart of a preparation method of a silicon heterojunction photovoltaic component provided by a second embodiment of the present disclosure;

[0021] Figure 3 A block diagram of a preparation device of a silicon heterojunction photovoltaic component provided by a third embodiment of the present disclosure;

[0022] Figure 4 A block diagram of an exemplary computer device suitable for implementing embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0023] Embodiments of the present disclosure are described below in detail, examples of which are shown in the accompanying drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by reference to the drawings are exemplary and are intended to explain the present disclosure, and cannot be understood as a limitation of the present disclosure.

[0024] A method and device for manufacturing a silicon heterojunction photovoltaic module are described below with reference to the accompanying drawings.

[0025] Figure 1 A flowchart of the method for manufacturing a silicon heterojunction photovoltaic module according to the present disclosure.

[0026] It should be noted that the subject of the method for manufacturing a silicon heterojunction photovoltaic module according to the present embodiment is a device for manufacturing a silicon heterojunction photovoltaic module, and the method for manufacturing a silicon heterojunction photovoltaic module according to the present disclosure will be described below with the device for manufacturing a silicon heterojunction photovoltaic module as the subject, which is not limited.

[0027] As shown in Figure 1 The method for manufacturing a silicon heterojunction photovoltaic module can include the following steps:

[0028] Step 101, pretreating a silicon heterojunction cell to generate a laminate.

[0029] Specifically, in the present disclosure, the silicon heterojunction cell is an N-type cell using a phosphorus-doped silicon wafer.

[0030] Optionally, the silicon heterojunction cell can be subjected to single welding, series welding, lamination, lamination, and cooling treatment to generate a laminate.

[0031] For example, when laminating, the laid cell can be placed in a laminator, the air in the module is extracted by vacuumizing, then heated to melt EVA, and the cell, glass and back plate are bonded together, and finally the module is cooled and taken out.

[0032] The lamination temperature and lamination time are determined according to the properties of EVA. When using fast curing EVA, the lamination cycle time is about 25 minutes, and the curing temperature is 150°C, which is not limited.

[0033] Step 102, processing the laminate based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed module.

[0034] It should be noted that the corresponding process for different types of laminates can also be different, and therefore the present disclosure has respectively formulated corresponding processing strategies for different types of laminates.

[0035] Therefore, different types of laminates require different automated mechanical equipment. For example, when processing A-type laminates, the frame can be connected by a frame assembling machine, and for B-type laminates, no frame connection is required.

[0036] Optionally, when the type of the laminate is the first type, the laminate can be framed, wired, and cured to generate a to-be-processed assembly.

[0037] Alternatively, when the type of the laminate is the second type, the laminate can be wired and cured to generate a to-be-processed assembly.

[0038] The first type can be an aluminum frame assembly, and the second type can be a frameless type, which is not limited here.

[0039] For example, if the current laminate is an aluminum frame assembly, the laminate of this type can be framed, wired, and cured to generate a to-be-processed assembly. If the current laminate is a frameless assembly, the laminate of this type can be wired and cured to generate a to-be-processed assembly.

[0040] Specifically, when curing, the laminate can be cured by a curing machine.

[0041] Step 103: The to-be-processed assembly is transferred to an EL detection station, and the current power supply is switched to a target regulated power supply.

[0042] The EL (Electroluminescent) detection station is also called an EL detection machine. In this disclosure, when performing conventional EL detection on the to-be-processed assembly, the current self-provided power supply and EL detection equipment, such as a platform, a probe, a pneumatic valve, an electrical control mechanism, and system software, are used.

[0043] When performing electrical injection processing on the to-be-processed assembly, the current power supply needs to be switched to a standby regulated power supply. The standby power supply II is connected in parallel with the original power supply I, and the voltage and current range are 60V and 15A, respectively. It should be noted that the power supplies I and II independently provide input current for the assembly in EL detection mode and electrical injection mode, respectively. That is, the station only uses the current source II when the assembly is being processed by electrical injection, and in addition, the EL detection involved in other steps is connected to the current source I.

[0044] Step 104: Adjust the preset software parameters, and perform electrical injection processing on the to-be-processed assembly to generate a target photovoltaic assembly.

[0045] The preset software parameters are also called electrical injection parameters.

[0046] It should be noted that after the to-be-processed component is loaded to the EL detection station, the positive and negative electrodes of the to-be-processed component are connected with the EL probe to form a current loop. The electro-injection treatment is performed in three stages: in the first stage, the current is set to 3-5 A, and the injection time is 5-30 s; in the second stage, the current is set to 5-9 A, and the injection time is 150-300 s; and in the third stage, the current is set to 9-12 A, and the injection time is 30-60 s. In each stage, the corresponding electro-injection parameters need to be set.

[0047] Specifically, the set of electro-injection parameters of each stage described above constitutes a recipe (process recipe / parameters) of the electro-injection treatment step.

[0048] The target photovoltaic module is the photovoltaic module that is currently prepared.

[0049] It should be noted that after the target photovoltaic module is generated, component testing needs to be performed, and then the output power of the cell can be calibrated to test the output characteristics and determine the quality grade of the photovoltaic module.

[0050] In the embodiments of the present disclosure, the silicon heterojunction cell is first pretreated to generate a laminate, then the laminate is processed based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed component, then the to-be-processed component is transferred to an EL detection station, the current power supply is switched to a target stabilized power supply, finally the preset software parameters are adjusted, and the to-be-processed component is subjected to electro-injection treatment to generate a target photovoltaic module. Thus, by electro-injection of the cell, the open-circuit voltage and the fill factor of the cell can be improved without causing a decrease in the short-circuit current, thereby maintaining the current of the cell string in the module substantially unchanged, maintaining the consistency of the current characteristics of the cell during cell sorting, restoring the power loss, and improving the output of the module. Since only the current power supply needs to be switched to a target stabilized power supply when the to-be-processed component is transferred to the EL detection station for electro-injection treatment, the remaining hardware and software devices other than the power supply can be normally used. That is, the electro-injection treatment process can fully utilize the existing EL detection equipment, and only a stabilized power supply needs to be added to meet the equipment investment of the electro-injection treatment process, thereby realizing the improvement of the output of the module, which is low in cost and easy to promote and utilize.

[0051] Figure 2 A flowchart of the method for preparing a silicon heterojunction photovoltaic module provided in the embodiments of the present disclosure.

[0052] As shown in Figure 2 The method for preparing a silicon heterojunction photovoltaic module can include the following steps:

[0053] In step 201, a silicon heterojunction cell is pretreated to generate a laminate.

[0054] In step 202, the laminated component is processed based on a processing strategy corresponding to the type of the laminated component to generate a to-be-processed component.

[0055] It should be noted that the specific implementation of steps 201 and 202 can refer to the above embodiments, which will not be described here.

[0056] In step 203, the current power supply is switched to a target regulated power supply, and the to-be-processed component is moved to an EL detection station so that the positive and negative electrodes of the to-be-processed component are in contact with detection probes respectively to form a current loop.

[0057] The target regulated power supply can be a pre-prepared regulated power supply for power supply for the electro-injection process.

[0058] It should be noted that after the to-be-processed component is moved to the EL detection station, the electro-injection process can be performed on the to-be-processed component, and the software parameters can be adjusted.

[0059] When the electro-injection is performed, the positive and negative electrodes of the to-be-processed component need to be in contact with the detection probes respectively to form a current loop.

[0060] In step 204, a forward bias is applied to the to-be-processed component, and the to-be-processed component is subjected to segmented electro-injection based on preset electro-injection parameters, wherein the current and time of each stage of electro-injection are different.

[0061] It should be noted that after the to-be-processed component is loaded to the EL detection station, the positive and negative electrodes of the to-be-processed component are connected to the EL probes to form a current loop. The electro-injection process is divided into three stages: in the first stage, the current is set to 3-5 A, and the injection time is 5-30 s; in the second stage, the current is set to 5-9 A, and the injection time is 150-300 s; in the third stage, the current is set to 9-12 A, and the injection time is 30-60 s. Each stage needs to set corresponding electro-injection parameters.

[0062] The injection temperature of each stage can be room temperature.

[0063] Thus, under the setting of certain electro-injection parameters, the hydrogen atom content of the surface and interface of the thin film in the battery can be changed, the passivation effect can be improved, the battery performance can be improved, and finally the output of the component can be increased.

[0064] In step 205, the target photovoltaic component is subjected to appearance detection, EL detection, and IV detection.

[0065] Optionally, after the target photovoltaic component is generated, the target photovoltaic component can be tested. When the EL detection is performed, the power supply needs to be switched to the original power supply.

[0066] It should be noted that after the target photovoltaic module is generated, module testing needs to be performed, and then the output power of the cell can be calibrated to test the output characteristics, and then the quality grade of the photovoltaic module is determined.

[0067] In the embodiment of the present disclosure, first, the silicon heterojunction cell is pretreated to generate a laminate, then the laminate is processed based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed module, then the current power supply is switched to a target stabilized power supply, and the to-be-processed module is moved to an EL detection station to make the positive and negative electrodes of the to-be-processed module contact with detection probes to form a current loop, then a forward bias is applied to the to-be-processed module, and the to-be-processed module is subjected to segmented electro-injection based on preset electro-injection parameters, wherein the current and time of each stage of electro-injection are different, and finally the target photovoltaic module is subjected to appearance detection, EL detection, and IV detection. Thus, by presetting the electro-injection parameters, the to-be-processed module is controlled in segments, the influencing factors of electro-injection type hydrogen passivation can be controlled, and the power conversion efficiency of the silicon solar cell is further improved. In addition, since the electro-injection processing procedure fully utilizes the EL detection equipment configured in the existing module production line, including its platform, probe, electrical, control mechanism and system software, only a little investment and simple process adjustment are needed to realize the improvement of the module output, which is very suitable for industrialization and popularization and application.

[0068] Figure 3 is a structural schematic diagram of a preparation device of a silicon heterojunction photovoltaic module according to a third embodiment of the present disclosure.

[0069] As shown in Figure 3 the preparation device 300 of the silicon heterojunction photovoltaic module can include a first generation module 310, a second generation module 320, a switching module 330, and a third generation module 340.

[0070] The first generation module 310 is configured to pretreat a silicon heterojunction cell to generate a laminate.

[0071] The second generation module 320 is configured to process the laminate based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed module.

[0072] The switching module 330 is configured to move the to-be-processed module to an EL detection station and switch the current power supply to a target stabilized power supply.

[0073] The third generation module 340 is configured to adjust preset software parameters and perform electro-injection processing on the to-be-processed module to generate a target photovoltaic module.

[0074] Optionally, the second generating module is specifically configured to:

[0075] In a case where the type of the laminate is the first type, the laminate is subjected to frame connection, wire connection and curing treatment to generate a to-be-processed assembly;

[0076] Alternatively,

[0077] In a case where the type of the laminate is the second type, the laminate is subjected to wire connection and curing treatment to generate a to-be-processed assembly.

[0078] Optionally, the switching module is specifically configured to:

[0079] Switch the current power supply to the target stabilized power supply, and move the to-be-processed assembly to an EL detection station, so that the positive electrode and the negative electrode of the assembly are respectively in contact with detection probes to form a current loop.

[0080] Optionally, the third generating module is specifically configured to:

[0081] Apply a forward bias to the to-be-processed assembly, and perform segmented electrical injection on the to-be-processed assembly based on preset electrical injection parameters, wherein the current and the time of electrical injection at each stage are different.

[0082] Optionally, the third generating module is further configured to:

[0083] Perform appearance detection, EL detection and IV detection on the target photovoltaic assembly.

[0084] In the embodiments of the present disclosure, first, a silicon heterojunction cell is pretreated to generate a laminate, then the laminate is processed based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed assembly, after that, the to-be-processed assembly is transferred to an EL detection station and the current power supply is switched to a target stabilized power supply, finally, preset software parameters are adjusted and electrical injection processing is performed on the to-be-processed assembly to generate a target photovoltaic assembly. Thus, by performing electrical injection on the cell, the open-circuit voltage and the fill factor of the cell can be improved without causing a decrease in the short-circuit current, so that the current of the cell string in the assembly remains basically unchanged, the consistency of the current characteristics of the cell during sorting is maintained, and the output power is maximized. Since only the current power supply needs to be switched to the target stabilized power supply when the to-be-processed assembly is moved to the EL detection station for electrical injection processing, the remaining hardware and software devices other than the power supply can be normally used. That is to say, the electrical injection processing procedure can fully utilize the existing EL detection equipment, and only a stabilized power supply needs to be added to meet the equipment investment of the electrical injection processing procedure, thereby realizing the improvement of the output of the assembly, which is low in cost and easy to promote and utilize.

[0085] Figure 4 A block diagram of an exemplary computer device suitable for implementing embodiments of the present disclosure is shown. Figure 4 The computer device 12 shown is merely an example and should not be construed as limiting the functionality and scope of the embodiments disclosed herein.

[0086] like Figure 4 As shown, the computer device 12 is represented in the form of a general-purpose computing device. The components of the computer device 12 may include, but are not limited to: one or more processors or processing units 16, system memory 28, and a bus 18 connecting different system components (including system memory 28 and processing unit 16).

[0087] Bus 18 represents one or more of several bus architectures, including a memory bus or memory controller, a peripheral bus, a graphics acceleration port, a processor, or a local bus using any of the various bus architectures. Examples of these architectures include, but are not limited to, the Industry Standard Architecture (ISA) bus, the Micro Channel Architecture (MAC) bus, the Enhanced ISA bus, the Video Electronics Standards Association (VESA) local bus, and the Peripheral Component Interconnect (PCI) bus.

[0088] Computer device 12 typically includes a variety of computer system readable media. These media can be any available media that can be accessed by computer device 12, including volatile and non-volatile media, removable and non-removable media.

[0089] Memory 28 may include computer system readable media in the form of volatile memory, such as Random Access Memory (RAM) 30 and / or cache memory 32. Computer device 12 may further include other removable / non-removable, volatile / non-volatile computer system storage media. By way of example only, storage system 34 may be used to read and write non-removable, non-volatile magnetic media (…). Figure 4 Not shown; usually referred to as a "hard drive"). Although Figure 4A disk drive, a floppy disk drive, a CD-ROM drive, a DVD-ROM drive, or other removable media drive, can be provided for reading from and writing to a removable n onvolatile magnetic disk (e.g., a "floppy disk"), and to a removable nonvolatile optical disk (e.g., a CD ROM, a DVD ROM, or another optical medium). In such instances, each drive can be connected to the bus 18 by one or more data media interfaces. The memory 28 can include at least one program product having a set (e.g., at least one) of program modules that are configured to carry out the functions of embodiments of the disclosure.

[0090] Program / utility 40, having a set (at least one) of program modules 42, can be stored in memory 28 by way of example, and can include an operating system, one or more application programs, other program modules, and program data, each of which or a combination thereof, can include implementation of a networking environment. Program modules 42 generally carry out the functions and / or methodologies of embodiments of the disclosure as described herein.

[0091] Computer device 12 can also communicate with one or more external devices 14 such as a keyboard or a pointing device, display 24, etc.; one or more devices that enable a user to interact with computer device 12; and / or one or more devices that enable computer device 12 to communicate with one or more other computing devices. Such communication can be via input / output (I / O) interfaces 22. Further, computer device 12 can communicate with one or more networks (such as a local area network (LAN), a wide area network (WAN), and / or the Internet) through network adapter 20. As depicted, network adapter 20 communicates with the other components of computer device 12 via bus 18. It should be appreciated that although not shown, other hardware and / or software modules could be used in conjunction with computer device 12. Such as, but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data archival storage systems, etc.

[0092] Processing unit 16 can execute a program from programs stored in system memory 28, to perform various functions and data processing, such as implementing the methods described in the foregoing embodiments.

[0093] It should be understood that various parts of the present disclosure can be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, a plurality of steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. As such, if implemented in hardware and in another embodiment, any of the following technologies or their combinations can be implemented: discrete logic circuitry having logic gates for implementing logical functions on data signals, application specific integrated circuits (ASICs) having appropriate combinational logic gates, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), and the like.

[0094] Those skilled in the art of the present technology can understand that all or part of the steps carried out by the above-mentioned embodiments can be completed by a program instructing the relevant hardware, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one of the steps of the method embodiments or a combination thereof.

[0095] In the embodiments of the present disclosure, the silicon heterojunction cell is first pretreated to generate a laminate, then the laminate is processed based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed assembly, then the to-be-processed assembly is transferred to an EL detection station, and the current power supply is switched to a target stabilized power supply, finally the preset software parameters are adjusted, and the to-be-processed assembly is subjected to electrical injection processing to generate a target photovoltaic assembly. Thus, by electrical injection of the cell, the open-circuit voltage and the fill factor of the cell can be improved without causing a decrease in the short-circuit current, thereby maintaining the current of the cell string in the assembly substantially unchanged, maintaining the consistency of the current characteristics of the cell during sorting, and maximizing the improvement of the output power. Since only the current power supply needs to be switched to the target stabilized power supply when the to-be-processed assembly is moved to the EL detection station for electrical injection processing, and the remaining hardware and software devices other than the power supply can be normally used. That is, the electrical injection processing procedure can fully utilize the existing EL detection equipment, and only a stabilized power supply needs to be added to meet the equipment investment of the electrical injection processing procedure, thereby realizing the improvement of the output of the assembly, which is low in cost and easy to promote and utilize.

[0096] In addition, each functional unit in the various embodiments of the present disclosure can be integrated in one processing module, or each unit can be physically present separately, or two or more units can be integrated in one module. The integrated module can be implemented in the form of hardware or in the form of a software functional module. When the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0097] The storage medium mentioned above can be a read-only memory, a magnetic disk or an optical disk, etc. Although the embodiments of the present disclosure have been shown and described above, it is understood that the above-mentioned embodiments are exemplary and cannot be understood as limiting the present disclosure, and those of ordinary skill in the art can make changes, modifications, replacements and variations to the above-mentioned embodiments within the scope of the present disclosure.

Claims

1. A method of fabricating a silicon heterojunction photovoltaic module, characterized by, The method comprises the following steps: preprocessing a silicon heterojunction cell to generate a laminate; processing the laminate based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed assembly, including: in the case where the type of the laminate is a first type, performing frame connection, wire connection, and curing treatment on the laminate to generate a to-be-processed assembly; or, in the case where the type of the laminate is a second type, performing wire connection and curing treatment on the laminate to generate a to-be-processed assembly; transferring the to-be-processed assembly to an EL detection station and switching a current power supply to a target stabilized power supply, including: switching the current power supply to the target stabilized power supply and moving the to-be-processed assembly to the EL detection station to enable the positive electrode and the negative electrode of the to-be-processed assembly to be in contact with detection probes respectively to form a current loop; adjusting preset software parameters and performing electrical injection treatment on the to-be-processed assembly, including: applying a forward bias to the to-be-processed assembly and performing segmented electrical injection on the to-be-processed assembly based on preset electrical injection parameters, wherein the current and the time of each stage of electrical injection are different to generate a target photovoltaic assembly.

2. The method of claim 1, wherein, After the target photovoltaic assembly is generated, the method further comprises the following steps: performing appearance detection, EL detection, and IV detection on the target photovoltaic assembly.

3. An apparatus for preparing a silicon heterojunction photovoltaic module, characterized by, The method according to any one of the preceding claims 1-2, comprising: a first generating module configured to preprocess a silicon heterojunction cell to generate a laminate; a second generating module configured to process the laminate based on a processing strategy corresponding to the type of the laminate to generate a to-be-processed assembly; a switching module configured to transfer the to-be-processed assembly to an EL detection station and switch a current power supply to a target stabilized power supply; a third generating module configured to adjust preset software parameters and perform electrical injection treatment on the to-be-processed assembly to generate a target photovoltaic assembly.

4. The apparatus of claim 3, wherein, The second generating module is specifically configured to: in the case where the type of the laminate is a first type, perform frame connection, wire connection, and curing treatment on the laminate to generate a to-be-processed assembly; or, in the case where the type of the laminate is a second type, perform wire connection and curing treatment on the laminate to generate a to-be-processed assembly. The switching module is specifically configured to:

5. The apparatus of claim 3, wherein, switch the current power supply to the target stabilized power supply and move the to-be-processed assembly to the EL detection station to enable the positive electrode and the negative electrode of the assembly to be in contact with detection probes respectively to form a current loop. The third generating module is specifically configured to:

6. The apparatus of claim 3, wherein, apply a forward bias to the to-be-processed assembly and perform segmented electrical injection on the to-be-processed assembly based on preset electrical injection parameters, wherein the current and the time of each stage of electrical injection are different. The third generating module is further configured to:

7. The apparatus of claim 3, wherein, perform appearance detection, EL detection, and IV detection on the target photovoltaic assembly. ​

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