An industrial nitrogen-oxygen sensor ceramic chip

Abstract

This invention relates to an industrial nitrogen and oxygen sensor ceramic chip, comprising a seventh, sixth, fifth, fourth, third, second, and first film strips stacked sequentially from bottom to top. This invention isolates the first chamber of the ceramic chip from the second and third chambers during normal operation using the low-temperature insulation properties of the YSZ film strips, reducing interference from the first chamber to the second and third chambers. Furthermore, this invention utilizes the high insulation properties of the Al2O3 insulating protective layer to isolate the Nernst cell working unit from the measurement working unit of the industrial nitrogen and oxygen sensor ceramic chip, reducing interference from the Nernst cell working unit to the measurement working unit. Simultaneously, this invention employs a dense Al2O3 film strip (i.e., the sixth film strip) between the heating electrode and each working chamber as an isolation layer, thereby improving the measurement accuracy of the industrial nitrogen and oxygen sensor ceramic chip.

Description

Technical Field

[0001] This invention relates to the field of nitrogen and oxygen sensor technology, and more specifically to an industrial nitrogen and oxygen sensor ceramic chip. Background Technology

[0002] Industrial nitrogen and oxygen sensors typically use optical nitrogen and oxygen sensors. However, due to the relatively high cost of optical nitrogen and oxygen sensors, in order to reduce the cost of use, industrial nitrogen and oxygen sensors are gradually starting to use cheaper electrochemical nitrogen and oxygen sensors.

[0003] Traditional electrochemical nitrogen and oxygen sensors use YSZ (8% mol Y₂O₃-stabilized ZrO₂) films as the substrate material for their core components, ceramic chips. However, using YSZ films has limitations. The normal operating temperature of industrial nitrogen and oxygen sensor ceramic chips is approximately 800℃. While YSZ films exhibit good oxygen ion conductivity at this temperature, the pumping currents in different chambers of the industrial nitrogen and oxygen sensor chip can easily interfere with each other during normal operation. Furthermore, the large current at the heating electrodes can interfere with the pumping currents in the first, second, and third chambers, thus affecting the measurement accuracy and resulting in poor accuracy when testing in low-concentration nitrogen and oxygen atmospheres. Summary of the Invention

[0004] To address the aforementioned problems in the prior art, this invention provides an industrial nitrogen and oxygen sensor ceramic chip. The technical problem to be solved by this invention is achieved through the following technical solution:

[0005] One embodiment of the present invention provides an industrial nitrogen and oxygen sensor ceramic chip, the ceramic chip comprising a seventh membrane strip, a sixth membrane strip, a fifth membrane strip, a fourth membrane strip, a third membrane strip, a second membrane strip, and a first membrane strip stacked sequentially from bottom to top, wherein a cavity-shaped reference gas channel is provided between the third and fifth membrane strips and on one side of the fourth membrane strip, wherein:

[0006] A heating electrode is disposed between the sixth film strip and the seventh film strip. The heating electrode includes a first heating region electrode, a second heating region electrode, and a third heating region electrode connected in sequence. The heating temperature of the first heating region electrode and the third heating region electrode is higher than that of the second heating region electrode. The first heating region electrode is used to heat a first high-temperature region, the third heating region electrode is used to heat a second high-temperature region, and the second heating region electrode is used to heat a low-temperature region located between the first high-temperature region and the second high-temperature region.

[0007] A first diffusion barrier, a first chamber, a second diffusion barrier, a second chamber, a third diffusion barrier, a third chamber, and a second membrane strip are sequentially disposed between the first membrane strip and the third membrane strip. A first inner electrode is disposed in the first chamber, a third inner electrode and a fourth inner electrode are disposed in the second chamber, and a fifth inner electrode is disposed in the third chamber.

[0008] Furthermore, the first chamber is located within the first high-temperature zone, the second chamber and the third chamber are located within the second high-temperature zone, and a portion of the second diffusion barrier between the first chamber and the second chamber is located within the low-temperature zone.

[0009] In one embodiment of the present invention, the ceramic chip further includes an external electrode and an external electrode protective layer, wherein:

[0010] The external electrode is disposed on the first membrane strip;

[0011] The outer electrode protective layer covers the outer electrode.

[0012] In one embodiment of the present invention, the ceramic chip further includes a sixth internal electrode, which is disposed between the fourth membrane strip, the reference gas channel and the fifth membrane strip.

[0013] In one embodiment of the present invention, the ceramic chip further includes a thermal stress diffusion hole, which extends through the fifth film strip and the sixth film strip to the upper surface of the heating electrode, and the thermal stress diffusion hole is also connected to the reference gas channel.

[0014] In one embodiment of the present invention, the first membrane strip, the second membrane strip, the third membrane strip, the fourth membrane strip, the fifth membrane strip and the seventh membrane strip are YSZ membrane strips, and the sixth membrane strip is an Al2O3 membrane strip.

[0015] In one embodiment of the present invention, the ceramic chip further includes an insulating protective layer disposed between the second diffusion barrier, the third diffusion barrier, the second film strip, and the third film strip, wherein the insulating protective layer comprises an alumina insulating film strip or is formed by printing an alumina insulating paste.

[0016] In one embodiment of the present invention, the ceramic chip further includes a second inner electrode disposed within the first cavity;

[0017] The first inner electrode and the second inner electrode are connected by leads. The first inner electrode, the second inner electrode, the first membrane strip, and the outer electrode form a main oxygen pumping unit. The main oxygen pumping unit is used to pump oxygen from the first chamber to the outside of the ceramic chip, thereby adjusting the oxygen concentration in the first chamber.

[0018] In one embodiment of the present invention, the first membrane strip, the third membrane strip, the fourth membrane strip, the fifth membrane strip and the seventh membrane strip are YSZ membrane strips, and the second membrane strip and the sixth membrane strip are Al2O3 membrane strips.

[0019] In one embodiment of the present invention, the first membrane strip, the third inner electrode, and the outer electrode form a secondary oxygen pumping unit, which is used to pump oxygen in the second chamber to the outside of the ceramic chip, thereby adjusting the oxygen concentration in the second chamber.

[0020] The first membrane strip, together with the fifth inner electrode and the outer electrode, forms a measurement working unit, which is used to measure the oxygen concentration in the third chamber.

[0021] The third membrane strip, the fourth membrane strip, the fourth inner electrode, and the sixth inner electrode form a Nernst cell working unit, which is used to monitor the oxygen concentration in the second chamber.

[0022] The fifth internal electrode is used to catalytically decompose NO in the third chamber into N2 and O2.

[0023] In one embodiment of the present invention, the first heating region electrode includes two symmetrically arranged and interconnected first heating region sub-electrodes, the second heating region electrode includes two symmetrically arranged second heating region sub-electrodes, and the third heating region electrode includes two symmetrically arranged third heating region sub-electrodes. One end of each of the two second heating region sub-electrodes is connected to one of the two first heating region sub-electrodes, and the other end of each of the two second heating region sub-electrodes is connected to one of the two third heating region sub-electrodes, wherein:

[0024] The first heating region sub-electrode and the third heating region sub-electrode each include a plurality of U-shaped electrodes connected in sequence. The second heating region sub-electrode is a strip electrode. The line width of the first heating region sub-electrode and the third heating region sub-electrode is smaller than the line width of the second heating region sub-electrode.

[0025] In one embodiment of the present invention,

[0026] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0027] 1. This invention sets two high-temperature zones on the heating electrode of the ceramic chip for an industrial nitrogen and oxygen sensor. The first chamber of the ceramic chip is placed in the first high-temperature zone, and the second and third chambers are placed in the second high-temperature zone. A low-temperature zone is provided between the two high-temperature zones. This allows the first chamber of the ceramic chip to be isolated from the second and third chambers of the ceramic chip during normal operation by utilizing the low-temperature insulation properties of the YSZ film tape, thereby reducing the interference of the first chamber on the second and third chambers.

[0028] 2. In this invention, a dense Al2O3 film strip (i.e., the sixth film strip 6) is disposed between the heating electrode of the ceramic chip and each working chamber as an isolation layer, preventing the formation of an oxygen ion transport circuit between the heating electrode and the working chamber. This achieves isolation and insulation between the heating electrode and the working chamber of the industrial nitrogen-oxygen sensor ceramic chip, reducing the interference of the large current of the heating electrode on the oxygen pumping current of the first, second, and third chambers of the ceramic chip during operation, thereby improving the measurement accuracy of the industrial nitrogen-oxygen sensor ceramic chip.

[0029] 3. This invention utilizes the high insulation properties of the insulating protective layer of Al2O3 material to isolate the Nernst cell working unit of the industrial nitrogen and oxygen sensor ceramic chip from the measurement working unit, thereby reducing the interference of the ceramic chip Nernst cell working unit on the measurement working unit and improving the measurement accuracy of the industrial nitrogen and oxygen sensor ceramic chip.

[0030] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0031] Figure 1 This is a cross-sectional schematic diagram of an industrial nitrogen and oxygen sensor ceramic chip provided in an embodiment of the present invention;

[0032] Figure 2 This is a cross-sectional schematic diagram of another industrial nitrogen and oxygen sensor ceramic chip provided in an embodiment of the present invention;

[0033] Figure 3 This is a planar schematic diagram of a heating electrode provided in an embodiment of the present invention.

[0034] Icon description:

[0035] First membrane strip-1, second membrane strip-2, third membrane strip-3, fourth membrane strip-4, fifth membrane strip-5, sixth membrane strip-6, seventh membrane strip-7, insulating protective layer-8, external electrode-11, first internal electrode-12, second internal electrode-13, third internal electrode-14, fourth internal electrode-15, fifth internal electrode-16, sixth internal electrode-17, heating electrode-18, control electrodes-19, 20, external electrode protective layer-21, first diffusion barrier-22, second diffusion barrier-23, third diffusion barrier-24, first chamber-25, second chamber-26, third chamber-27, reference gas channel-28. Detailed Implementation

[0036] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0037] It should be noted that in this embodiment, "up," "down," "left," and "right" refer to the positional relationship of the ceramic chip when it is in the illustrated state, "length" refers to the horizontal dimension of the ceramic chip when it is in the illustrated state, and "thickness" refers to the vertical dimension of the ceramic chip when it is in the illustrated state.

[0038] Example 1

[0039] Traditional industrial nitrogen and oxygen sensor ceramic chips use YSZ film strips as the substrate. YSZ film strips possess excellent oxygen ion transport capabilities at high temperatures. Once the ceramic chip reaches its normal operating temperature of approximately 800℃, an oxygen ion transport circuit is formed between the electrodes and the YSZ film strip under voltage, generating an oxygen pumping current. In the structure of traditional industrial nitrogen and oxygen sensor ceramic chips, the heating electrode has only one high-temperature zone, and all chambers of the ceramic chip are located within the same high-temperature zone. This causes the oxygen pumping currents in different chambers of the ceramic chip to interfere with each other, thus affecting the measurement accuracy of the industrial nitrogen and oxygen sensor ceramic chip.

[0040] Based on the above issues, please refer to Figure 1 , Figure 2 and Figure 3 , Figure 1 This is a cross-sectional schematic diagram of an industrial nitrogen and oxygen sensor ceramic chip provided in an embodiment of the present invention. Figure 2 This is a cross-sectional schematic diagram of another industrial nitrogen and oxygen sensor ceramic chip provided in an embodiment of the present invention. Figure 3This is a planar schematic diagram of a heating electrode provided in an embodiment of the present invention. The present invention provides an industrial nitrogen and oxygen sensor ceramic chip, which includes a seventh membrane strip 7, a sixth membrane strip 6, a fifth membrane strip 5, a fourth membrane strip 4, a third membrane strip 3, a second membrane strip 2, and a first membrane strip 1 stacked sequentially from bottom to top. A cavity-shaped reference gas channel 28 is provided between the third membrane strip 3 and the fifth membrane strip 5, and on one side of the fourth membrane strip 4. This reference gas channel 28 is connected to external air, wherein:

[0041] A heating electrode 18 is provided between the sixth film strip 6 and the seventh film strip 7. The heating electrode 18 includes a first heating region electrode, a second heating region electrode and a third heating region electrode connected in sequence. The heating temperature of the first heating region electrode and the third heating region electrode is greater than that of the second heating region electrode. The first heating region electrode is used to heat the first high temperature region, the third heating region electrode is used to heat the second high temperature region, and the second heating region electrode is used to heat the low temperature region located between the first high temperature region and the second high temperature region.

[0042] A first diffusion barrier 22, a first chamber 25, a second diffusion barrier 23, a second chamber 26, a third diffusion barrier 24, a third chamber 27, and a second membrane strip 2 are sequentially arranged between the first membrane strip 1 and the third membrane strip 3. A first internal electrode 12 is arranged in the first chamber 25, a third internal electrode 14 and a fourth internal electrode 15 are arranged in the second chamber 26, and a fifth internal electrode 16 is arranged in the third chamber 27.

[0043] Furthermore, the first chamber 25 is located in the first high-temperature zone, the second chamber 26 and the third chamber 27 are located in the second high-temperature zone, and the portion of the second diffusion barrier 23 between the first chamber 25 and the second chamber 26 is located in the low-temperature zone.

[0044] The industrial nitrogen-oxygen sensor ceramic chip provided by this invention designs a first heating region electrode, a second heating region electrode, and a third heating region electrode connected sequentially at the heating electrode. This allows the first and third heating region electrodes to correspond to two high-temperature zones, and the second heating region electrode to correspond to a low-temperature zone between the two high-temperature zones. This places the first chamber of the ceramic chip within the first high-temperature zone heated by the heating electrodes, and the second and third chambers within the second high-temperature zone heated by the heating electrodes. A low-temperature zone is provided between the first and second high-temperature zones between the heating electrodes. During normal operation of the industrial nitrogen-oxygen sensor ceramic chip, the oxygen ion transport capability of the YSZ film strip in this low-temperature zone is very poor and can be considered as insulation. In this ceramic chip structure, the first chamber of the ceramic chip is isolated from the second and third chambers during normal operation by the low-temperature insulation properties of the YSZ film strip, reducing the interference of the first chamber on the second and third chambers.

[0045] Preferably, the heating temperature of the electrode in the second heating region is below 400°C. Since the temperature in the low-temperature region is below 400°C, the YSZ film strip in that region is also below 400°C, resulting in very poor oxygen ion transport capability; it can be considered an insulator.

[0046] Preferably, the distance between the first high-temperature zone and the second high-temperature zone is 5-50mm, which ensures that there is sufficient distance between the two high-temperature zones, so that the first chamber can be isolated from the second and third chambers by utilizing the low-temperature insulation properties of the YSZ film tape during normal operation.

[0047] Optionally, the first diffusion barrier 22, the second diffusion barrier 23, and the third diffusion barrier 24 are porous bodies formed of alumina, with a thickness ranging from 30 μm to 250 μm and a porosity of 30% to 60%.

[0048] In this embodiment, the ceramic chip further includes an external electrode 11 and an external electrode protective layer 21, wherein:

[0049] The external electrode 11 is disposed on the first membrane strip 1;

[0050] The outer electrode protective layer 21 covers the outer electrode 11.

[0051] Optionally, the outer electrode protective layer 21 has a porous structure, preferably a porous alumina layer, with a thickness of 20μm-100μm and a porosity of 10%-30%.

[0052] In this embodiment, the ceramic chip also includes a sixth internal electrode 17, which is disposed between the fourth membrane strip 4, the reference gas channel 28 and the fifth membrane strip 5.

[0053] In this embodiment, the ceramic chip also includes a thermal stress diffusion hole, which extends through the fifth film strip 5 and the sixth film strip 6 to the upper surface of the heating electrode 18. The thermal stress diffusion hole is also connected to the reference gas channel 28. The function of the thermal stress diffusion hole is to diffuse the thermal stress of the heating electrode into the reference gas channel.

[0054] In this embodiment, please refer to Figure 3 The first heating region electrode includes two symmetrically arranged and interconnected first heating region sub-electrodes; the second heating region electrode includes two symmetrically arranged second heating region sub-electrodes; and the third heating region electrode includes two symmetrically arranged third heating region sub-electrodes. One end of each of the two second heating region sub-electrodes is connected to one of the two first heating region sub-electrodes, and the other end of each of the two second heating region sub-electrodes is connected to one of the two third heating region sub-electrodes, wherein:

[0055] The first heating region sub-electrode and the third heating region sub-electrode include multiple U-shaped electrodes connected in sequence. The second heating region sub-electrode is a strip electrode. The line width d1 of the first heating region sub-electrode and the line width d3 of the third heating region sub-electrode are both smaller than the line width d2 of the second heating region sub-electrode. As a result, the heating of the first heating region electrode and the third heating region electrode is uniform, and the heating temperature is higher than that of the second heating region electrode.

[0056] In this embodiment, the ceramic chip further includes eight control electrodes, four of which are disposed on the first film strip, such as... Figure 1 and Figure 2 The control electrode 19 is located in the middle, and the other four control electrodes are disposed below the seventh membrane strip 7, such as... Figure 1 and Figure 2 The control electrode 20 in the middle, the four control electrodes above the first membrane strip 1 are connected in sequence to the first inner electrode 12, the third inner electrode 14, the outer electrode, and the inner electrode 16, and the control electrode below the seventh membrane strip 7 is connected in sequence to the inner electrode 17, the heating positive electrode, the heating negative electrode, and the temperature measuring electrode.

[0057] In this embodiment, the first inner electrode 12, the first membrane strip 1, and the outer electrode 11 form a main oxygen pumping unit. This unit pumps oxygen from the first chamber 25 to the outside of the ceramic chip, thereby adjusting the oxygen concentration within the first chamber 25. The first membrane strip 1, the third inner electrode 14, and the outer electrode 11 form a secondary oxygen pumping unit. This unit pumps oxygen from the second chamber 26 to the outside of the ceramic chip, thereby adjusting the oxygen concentration within the second chamber 26. During operation of the industrial nitrogen-oxygen sensor ceramic chip, the first membrane strip 1, the first inner electrode 12, and the outer electrode 11 form an oxygen ion transport circuit. O2 in the first chamber 25 gains electrons on the surface of the first inner electrode 12 to form O2. 2- Then O 2- O2 is generated by the oxygen ion transport circuit migrating to the external electrode 11 and releasing electrons. The main pump oxygen unit pumps the oxygen in the first chamber 25 to the outside of the chip, thereby regulating the oxygen concentration in the first chamber 25. When the industrial nitrogen and oxygen sensor ceramic chip is working, an oxygen ion transport circuit is formed between the first membrane strip 1, the third inner electrode 14, and the external electrode 11. O2 in the second chamber 26 gains electrons on the surface of the third inner electrode 14 to form O2. 2- Then O 2- The oxygen ions migrate through the oxygen ion transport circuit to the external electrode 11, where they release electrons and become O2. The auxiliary pump oxygen working unit pumps the oxygen in the second chamber 26 to the outside of the chip, thereby regulating the oxygen concentration in the second chamber 26.

[0058] The third membrane strip 3, the fourth membrane strip 4, the fourth inner electrode 15, and the sixth inner electrode 17 form a Nernst cell working unit, which is used to monitor the oxygen concentration in the second chamber 26.

[0059] The fifth internal electrode 16 is used to catalytically decompose NO in the third chamber 27 into N2 and O2.

[0060] The first membrane strip 1, together with the fifth inner electrode 16 and the outer electrode 11, forms a measurement working unit, which is used to measure the oxygen concentration in the third chamber 27. When the industrial nitrogen-oxygen sensor ceramic chip is in operation, the first membrane strip 1, the fifth inner electrode 16, and the outer electrode 11 form an oxygen ion transport circuit. O2 in the third chamber 27 gains electrons on the surface of the fifth inner electrode 16 to form O2 ions. 2- The oxygen ions migrate through the oxygen ion transport circuit to the external electrode 11, releasing electrons and becoming O2. 2- The current generated by directional migration in the first membrane belt 1 is called the oxygen pumping current. The oxygen pumping current corresponds uniquely to the oxygen partial pressure of the gas to be measured. The measurement unit can calculate the concentration of O2 decomposed in the third chamber 27 by measuring the oxygen pumping current in the third chamber. The concentration of nitrogen oxides in the gas to be measured can be calculated by measuring the concentration of oxygen decomposed in the third chamber 27.

[0061] This invention sets two high-temperature zones on the heating electrode of an industrial nitrogen and oxygen sensor ceramic chip. The first chamber of the ceramic chip is placed in the first high-temperature zone, and the second and third chambers are placed in the second high-temperature zone. A low-temperature zone is provided between the two high-temperature zones. This allows the first chamber of the ceramic chip to be isolated from the second and third chambers of the ceramic chip during normal operation by utilizing the low-temperature insulation properties of the YSZ film tape, thereby reducing the interference of the first chamber on the second and third chambers.

[0062] Example 2

[0063] Based on Example 1, please refer to Figure 1 The first film strip 1, the second film strip 2, the third film strip 3, the fourth film strip 4, the fifth film strip 5 and the seventh film strip 7 of the industrial nitrogen and oxygen sensor ceramic chip provided in this embodiment of the invention are YSZ film strips, and the sixth film strip 6 is an Al2O3 film strip.

[0064] In this embodiment, the ceramic chip also includes a second internal electrode 13 disposed in the first chamber 25; the first internal electrode 12 and the second internal electrode 13 are connected by leads, and the first internal electrode 12, the second internal electrode 13, the first membrane strip 1 and the external electrode 11 form a main oxygen pumping unit, which is used to pump oxygen in the first chamber 25 to the outside of the ceramic chip, thereby adjusting the oxygen concentration in the first chamber 25.

[0065] Optionally, the thickness of the Al2O3 film can range from 50 μm to 250 μm.

[0066] Optionally, the thickness of the YSZ membrane strip is 50μm to 250μm.

[0067] In this embodiment, the ceramic chip further includes an insulating protective layer 8, which is disposed between the second diffusion barrier 23, the third diffusion barrier 24, the second film strip 2, and the third film strip 3.

[0068] Optionally, the main component of the insulating protective layer 8 is Al2O3, which can be achieved by printing Al2O3 paste or stacking Al2O3 film tape.

[0069] Furthermore, the thickness of the insulating protective layer 8 ranges from 10 μm to 50 μm.

[0070] This invention utilizes the high insulation properties of the insulating protective layer of Al2O3 material to isolate the Nernst cell working unit of the industrial nitrogen and oxygen sensor ceramic chip from the measurement working unit, thereby reducing the interference of the ceramic chip Nernst cell working unit on the measurement working unit and improving the measurement accuracy of the industrial nitrogen and oxygen sensor ceramic chip.

[0071] Traditional industrial nitrogen-oxygen sensor ceramic chips use YSZ film strips as the substrate. During normal operation, the YSZ film strips exhibit good oxygen ion transport capabilities. Under normal operating conditions, the heating electrode current is between 0.1A and 1A, the oxygen pumping current in the first chamber is between 1mA and 10mA, and the oxygen pumping currents in the second and third chambers are both between 1μA and 10μA. The high current of the heating electrode in traditional industrial nitrogen-oxygen sensor ceramic chips interferes with the oxygen pumping currents in each chamber, affecting the final measurement accuracy. This invention incorporates a dense Al2O3 film strip (i.e., the sixth film strip 6) between the heating electrode and each working chamber as an isolation layer, preventing the formation of an oxygen ion transport loop between the heating electrode and the working chambers. This achieves the isolation and insulation between the heating electrode and the working chamber of the industrial nitrogen and oxygen sensor ceramic chip of the present invention, reduces the interference of the large current of the heating electrode on the oxygen pumping current of the first, second and third chambers of the ceramic chip during operation, and thus improves the measurement accuracy of the industrial nitrogen and oxygen sensor ceramic chip.

[0072] Example 3

[0073] Based on Example 1, please refer to Figure 2The first film strip 1, the third film strip 3, the fourth film strip 4, the fifth film strip 5 and the seventh film strip 7 of the industrial nitrogen and oxygen sensor ceramic chip provided in this embodiment of the invention are YSZ film strips, and the second film strip 2 and the sixth film strip 6 are Al2O3 film strips.

[0074] Optionally, the thickness of the Al2O3 film can range from 50 μm to 250 μm.

[0075] Optionally, the thickness of the YSZ membrane strip is 50μm to 250μm.

[0076] This invention utilizes the high insulation properties of the second film strip 2 (Al2O3 film strip) to isolate the Nernst cell working unit of the industrial nitrogen and oxygen sensor ceramic chip from the measurement working unit, thereby reducing the interference of the ceramic chip Nernst cell working unit on the measurement working unit and improving the measurement accuracy of the industrial nitrogen and oxygen sensor ceramic chip.

[0077] This invention employs a dense Al2O3 film strip (i.e., the sixth film strip 6) as an isolation layer between the ceramic chip heating electrode and each working chamber, preventing the formation of an oxygen ion transport circuit between the ceramic chip heating electrode and the working chamber. This achieves complete isolation and insulation between the heating electrode and the working chamber of the industrial nitrogen-oxygen sensor ceramic chip, reducing the interference of the large current from the heating electrode during operation on the oxygen pumping current of the first, second, and third chambers of the ceramic chip, thereby improving the measurement accuracy of the industrial nitrogen-oxygen sensor ceramic chip.

[0078] In the description of this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0079] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0080] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, disclosure, and appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0081] In the description of this invention, terms such as "connection" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The orientations or positional relationships indicated by terms such as "up," "down," "left," and "right" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0082] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, any modifications made without departing from the inventive concept should be considered within the scope of protection of the present invention.

Claims

1. An industrial nitrogen and oxygen sensor ceramic chip, characterized in that, The ceramic chip includes a seventh membrane strip (7), a sixth membrane strip (6), a fifth membrane strip (5), a fourth membrane strip (4), a third membrane strip (3), a second membrane strip (2), and a first membrane strip (1) stacked sequentially from bottom to top. A cavity-shaped reference gas channel (28) is provided between the third membrane strip (3) and the fifth membrane strip (5), and on one side of the fourth membrane strip (4). A heating electrode (18) is provided between the sixth film strip (6) and the seventh film strip (7). The heating electrode (18) includes a first heating region electrode, a second heating region electrode and a third heating region electrode connected in sequence. The heating temperature of the first heating region electrode and the third heating region electrode is greater than that of the second heating region electrode. The first heating region electrode is used to heat the first high temperature region, the third heating region electrode is used to heat the second high temperature region, and the second heating region electrode is used to heat the low temperature region between the first high temperature region and the second high temperature region. A first diffusion barrier (22), a first chamber (25), a second diffusion barrier (23), a second chamber (26), a third diffusion barrier (24), a third chamber (27), and a second membrane strip (2) are sequentially arranged between the first membrane strip (1) and the third membrane strip (3). A first internal electrode (12) is arranged in the first chamber (25), a third internal electrode (14) and a fourth internal electrode (15) are arranged in the second chamber (26), and a fifth internal electrode (16) is arranged in the third chamber (27). Furthermore, the first chamber (25) is located within the first high-temperature zone, the second chamber (26) and the third chamber (27) are located within the second high-temperature zone, and a portion of the second diffusion barrier (23) between the first chamber (25) and the second chamber (26) is located within the low-temperature zone; The ceramic chip further includes an external electrode (11) and an external electrode protective layer (21), wherein: the external electrode (11) is disposed on the first film strip (1); and the external electrode protective layer (21) covers the external electrode (11); The ceramic chip also includes a second inner electrode (13) disposed in the first chamber (25); the first inner electrode (12) and the second inner electrode (13) are connected by leads, and the first inner electrode (12), the second inner electrode (13), the first membrane strip (1) and the outer electrode (11) form a main oxygen pumping unit, which is used to pump oxygen in the first chamber (25) to the outside of the ceramic chip, thereby adjusting the oxygen concentration in the first chamber (25); The first membrane strip (1), together with the third inner electrode (14) and the outer electrode (11), forms a secondary oxygen pumping unit. The secondary oxygen pumping unit is used to pump oxygen from the second chamber (26) to the outside of the ceramic chip, thereby adjusting the oxygen concentration in the second chamber (26). The first membrane strip (1) and the third membrane strip (3) are YSZ membrane strips; the first membrane strip (1) and the third membrane strip (3) corresponding to the low temperature zone are insulated, so that electrical isolation is formed between the first chamber (25) and the second chamber (26).

2. The industrial nitrogen and oxygen sensor ceramic chip according to claim 1, characterized in that, The ceramic chip also includes a sixth internal electrode (17), which is disposed between the fourth membrane strip (4), the reference gas channel (28), and the fifth membrane strip (5).

3. The industrial nitrogen and oxygen sensor ceramic chip according to claim 2, characterized in that, The ceramic chip also includes a thermal stress diffusion hole, which extends through the fifth film strip (5) and the sixth film strip (6) to the upper surface of the heating electrode (18), and the thermal stress diffusion hole is also connected to the reference gas channel (28).

4. The industrial nitrogen and oxygen sensor ceramic chip according to claim 1, characterized in that, The first membrane strip (1), the second membrane strip (2), the third membrane strip (3), the fourth membrane strip (4), the fifth membrane strip (5) and the seventh membrane strip (7) are YSZ membrane strips, and the sixth membrane strip (6) is an Al2O3 membrane strip.

5. The industrial nitrogen and oxygen sensor ceramic chip according to claim 4, characterized in that, The ceramic chip also includes an insulating protective layer (8), which is disposed between the second diffusion barrier (23), the third diffusion barrier (24), the second film strip (2), and the third film strip (3). The insulating protective layer (8) includes an alumina insulating film strip or is formed by printing alumina insulating paste.

6. The industrial nitrogen and oxygen sensor ceramic chip according to claim 1, characterized in that, The fourth membrane strip (4), the fifth membrane strip (5) and the seventh membrane strip (7) are YSZ membrane strips, and the second membrane strip (2) and the sixth membrane strip (6) are Al2O3 membrane strips.

7. The industrial nitrogen and oxygen sensor ceramic chip according to claim 2, characterized in that, The first membrane strip (1), together with the fifth inner electrode (16) and the outer electrode (11), forms a measurement working unit, which is used to measure the oxygen concentration in the third chamber (27); The third membrane strip (3), the fourth membrane strip (4), the fourth inner electrode (15), and the sixth inner electrode (17) form a Nernst cell working unit, which is used to monitor the oxygen concentration in the second chamber (26). The fifth internal electrode (16) is used to catalytically decompose NO in the third chamber (27) into N2 and O2.

8. The industrial nitrogen and oxygen sensor ceramic chip according to claim 1, characterized in that, The first heating region electrode includes two symmetrically arranged and interconnected first heating region sub-electrodes; the second heating region electrode includes two symmetrically arranged second heating region sub-electrodes; and the third heating region electrode includes two symmetrically arranged third heating region sub-electrodes. One end of each of the two second heating region sub-electrodes is connected to one of the two first heating region sub-electrodes, and the other end of each of the two second heating region sub-electrodes is connected to one of the two third heating region sub-electrodes, wherein: The first heating region sub-electrode and the third heating region sub-electrode each include a plurality of U-shaped electrodes connected in sequence. The second heating region sub-electrode is a strip electrode. The line width of the first heating region sub-electrode and the third heating region sub-electrode is smaller than the line width of the second heating region sub-electrode.

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