A kind of semiconductor gas sensor electrical performance detection tool, system and method

Abstract

The application discloses a kind of semiconductor gas sensor electrical performance detection tool, system and method, including substrate and be located on substrate single-chip microcomputer control module and multiple rows of test unit, each row of test unit is equipped with power management module, first, second, third operational amplifier module, channel gating module and multiple test jacks, in each row of test unit, power management module is respectively powered for first, second, third operational amplifier module, channel gating module and multiple test jacks, single-chip microcomputer control module is connected with host computer module communication, single-chip microcomputer control module is used to collect the heat source voltage, aging voltage and load voltage value of each semiconductor gas sensor inserted into test jack, and the collected data is transmitted to host computer, host computer is used to issue acquisition instruction to single-chip microcomputer control module, the batch detection of multiple semiconductor gas sensors to be measured can be realized by the application, and the detection efficiency of semiconductor gas sensor is greatly improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electrical performance detection of semiconductor gas sensors, and particularly relates to a kind of electrical performance detection tool, system and method of semiconductor gas sensor. BACKGROUND

[0002] As shown in Figure 1 The electrical performance test mode of the prior art semiconductor gas sensor is composed of a voltage stabilizing power supply 2, an impedance analyzer 3 and a semiconductor gas sensor 1 to be tested. The voltage stabilizing power supply 2 is connected to the 1 and 4 pin ends of the semiconductor gas sensor 1 to provide the required heat source voltage for the semiconductor gas sensor 1, and continuously heats the internal heat source resistor R H The impedance analyzer 3 is connected to the 2 and 3 pin ends. After the heat source resistor R H is continuously heated for 3 minutes, the impedance analyzer 3 is used to measure the impedance value between the internal resistor Rs between the 2 and 3 pin ends, and record it. When other semiconductor gas sensors 1 need to be replaced, the above steps can be repeated.

[0003] The electrical performance test mode of the prior art semiconductor gas sensor 1 has low detection efficiency, and only one sample can be detected at a time, which cannot meet the demand of batch sample detection at a time, and has low detection efficiency. At the same time, the prior art electrical performance test mode also has low automation degree, and needs to frequently replace samples for testing with the help of manual work, and manually records the test data, which is time-consuming and laborious. Since it needs to use an impedance analyzer 3, it will increase the detection cost, and has strong restriction on enterprises and units with limited funds. Therefore, there is an urgent need for an electrical performance detection tool and system for semiconductor gas sensors. SUMMARY

[0004] In view of the deficiencies in the prior art, the present application provides an electrical performance detection tool, system and method for semiconductor gas sensors.

[0005] The present application discloses an electrical performance detection tool for semiconductor gas sensors, which comprises a substrate, a single-chip microcomputer control module and a plurality of test units are arranged on the substrate. Each test unit is provided with a power management module, a first operational amplifier module, a second operational amplifier module, a third operational amplifier module, a channel gating module and a plurality of test jacks for inserting semiconductor gas sensors.

[0006] In each row of the test unit, the power management module respectively supplies power to the first operational amplifier module, the second operational amplifier module, the third operational amplifier module, the channel gating module, the heat source voltage pin end of the plurality of test jacks, and the aging voltage pin end of the plurality of test jacks; the heat source voltage pin end of the plurality of test jacks is connected to the input end of the first operational amplifier module in parallel; the aging voltage pin end of the plurality of test jacks is connected to the input end of the second operational amplifier module in parallel; the output end of the first operational amplifier module, the output end of the second operational amplifier module, and the load voltage pin end of each test jack are respectively connected to the input end of the channel gating module; the gating control end of the channel gating module is connected to the single-chip microcomputer control module.

[0007] The output end of the channel gating module is connected to the input end of the third operational amplifier module, and the output end of the third operational amplifier module is connected to the single-chip microcomputer control module; the single-chip microcomputer control module is used to collect the heat source voltage, the aging voltage, and the load voltage of the semiconductor gas sensor inserted into each test jack.

[0008] As a further improvement of the present application, in each row of the test unit, the heat source voltage pin end, the aging voltage pin end, the load voltage pin end, and the GND end on each test jack correspond one-to-one to the pins of the semiconductor gas sensor.

[0009] Each test jack is provided with one LED indicator lamp for prompting whether the semiconductor gas sensor is inserted into the test jack.

[0010] As a further improvement of the present application, the first operational amplifier module includes an operational amplifier U1, and the second operational amplifier module includes an operational amplifier U2.

[0011] The heat source voltage pin end of the plurality of test jacks is connected to the positive input end of the operational amplifier U1 in parallel, and the inverting input end of the operational amplifier U1 is connected to the output end of the operational amplifier U1 in parallel and then connected to the input end of the channel gating module.

[0012] The aging voltage pin end of the plurality of test jacks is connected to the positive input end of the operational amplifier U2 in parallel, and the inverting input end of the operational amplifier U2 is connected to the output end of the operational amplifier U2 in parallel and then connected to the input end of the channel gating module.

[0013] As a further improvement of the present application, the third operational amplifier module includes an operational amplifier U3 and an operational amplifier U4.

[0014] The output end of the channel gating module is electrically connected with the non-inverting input end of the operational amplifier U3, the inverting input end of the operational amplifier U3 is connected in parallel with the output end of the operational amplifier U3 and then is electrically connected with the non-inverting input end of the operational amplifier U4, and the inverting input end of the operational amplifier U4 is connected in parallel with the output end of the operational amplifier U4 and then is electrically connected with the single-chip microcomputer control module.

[0015] As a further improvement of the present application, in each row of the test unit, the channel gating module comprises at least one CD4067 switch chip.

[0016] The gating control pin of the CD4067 switch chip is electrically connected with the single-chip microcomputer control module, the I0-I15 input pins of the CD4067 switch chip are respectively electrically connected with the corresponding load voltage pin end, the output end of the operational amplifier U1 and the output end of the operational amplifier U2, and the common output end of the CD4067 switch chip is electrically connected with the non-inverting input end of the operational amplifier U3.

[0017] When two CD4067 switch chips are connected in series, the common output end of one CD4067 switch chip is electrically connected with one of the I0-I15 input ends of the other CD4067 switch chip.

[0018] As a further improvement of the present application, a voltage stabilizing power supply is further included.

[0019] The voltage stabilizing power supply is used for supplying power for the single-chip microcomputer control module and the power management module in each row of the test unit.

[0020] The application discloses a semiconductor gas sensor electrical performance detection system, which comprises the semiconductor gas sensor electrical performance detection tool and further comprises:

[0021] An upper computer module is in communication connection with the single-chip microcomputer control module, and is used for issuing a collection instruction to the single-chip microcomputer control module and performing data processing on original AD values of the heat source voltage, the aging voltage and the load voltage collected by the single-chip microcomputer control module.

[0022] A data display module is in communication connection with the upper computer module, and is used for displaying the heat source voltage, the aging voltage, the load voltage and the internal resistance Rs value of the semiconductor gas sensor to be measured processed by the upper computer module.

[0023] A data storage module is in communication connection with the upper computer module, and is used for storing the values collected by the upper computer module and the data processing results.

[0024] A man-machine interaction module, which is in communication connection with the host computer module, is used for parameter configuration input and button control.

[0025] The application discloses a kind of semiconductor gas sensor electrical performance detection method, applied to the semiconductor gas sensor electrical performance detection system described above, comprising:

[0026] The semiconductor gas sensor is inserted into the test jack corresponding to the substrate;

[0027] The host computer module issues parameter acquisition instructions to the single-chip microcomputer control module according to the preset test jack station number, detection time interval and detection times;

[0028] The single-chip microcomputer control module receives the above-mentioned parameter acquisition instructions, and controls the channel gating module to connect the aging voltage, load voltage and heat source voltage pin end corresponding to the test jack;

[0029] The single-chip microcomputer control module obtains the original AD value of the aging voltage, load voltage and heat source voltage of the semiconductor gas sensor in the test jack, and sends the obtained original AD value to the host computer module;

[0030] The host computer module calculates the heat source voltage, aging voltage, load voltage and internal resistance Rs value of the semiconductor gas sensor to be tested according to the above-mentioned original AD value, and displays the calculation result externally through the data display module, completing the detection of the semiconductor gas sensor to be tested.

[0031] As a further improvement of the application, the single-chip microcomputer control module sends the obtained original AD value to the host computer module, specifically comprising:

[0032] The single-chip microcomputer control module converts the analog voltage signal of the heat source voltage, aging voltage and load voltage of the semiconductor gas sensor collected by the internal ADC acquisition function into a digital voltage signal, and encapsulates the converted digital voltage signal into a corresponding AD voltage acquisition data packet according to the agreed protocol format;

[0033] The single-chip microcomputer control module transmits the encapsulated AD voltage acquisition data packet to the host computer module.

[0034] As a further improvement of the application, it further comprises:

[0035] After detection, the host computer module can also export an Excel format detection report;

[0036] The detection report includes test times, test jack station number, heat source voltage, aging voltage, load voltage and internal resistance Rs value.

[0037] Compared with the prior art, the present application has the following advantages:

[0038] The present application can realize batch detection of multiple semiconductor gas sensors, greatly improving the detection efficiency of semiconductor gas sensors, by setting a substrate provided with a single-chip microcomputer control module and multiple rows of test units, each row of test units being provided with a power management module, a first operational amplifier module, a second operational amplifier module, a third operational amplifier module, a channel gating module and multiple test jacks for inserting semiconductor gas sensors.

[0039] The present application can improve the degree of automation of semiconductor gas sensor detection, greatly reduce the investment in labor costs, and also improve the accuracy of detection data, by setting a detection tool and communicating the detection tool with an upper computer.

[0040] The present application can realize detection of the heat source voltage, aging voltage, load voltage and internal resistance Rs value of the semiconductor gas sensor to be tested by the single-chip microcomputer control module and the upper computer module, greatly reducing the test cost compared with the traditional test method requiring the use of an impedance analyzer, and meeting the use requirements of enterprises and units with limited funds. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 A semiconductor gas sensor detection diagram in the prior art;

[0042] Figure 2 A structure diagram of a semiconductor gas sensor electrical performance detection tool disclosed in an embodiment of the present application;

[0043] Figure 3 A substrate, test unit and test jack structure diagram of a semiconductor gas sensor electrical performance detection tool disclosed in an embodiment of the present application;

[0044] Figure 4 A test jack structure diagram of a semiconductor gas sensor electrical performance detection tool disclosed in an embodiment of the present application;

[0045] Figure 5 A typical application circuit diagram of a semiconductor gas sensor of a semiconductor gas sensor electrical performance detection tool disclosed in an embodiment of the present application;

[0046] Figure 6The AD acquisition circuit module schematic view of the test jack numbered 1-5 in the first test unit of the semiconductor gas sensor electrical performance detection tool disclosed by an embodiment of the present application is shown in the figure.

[0047] Figure 7 The first, second and third operational amplification module structure schematic view of the semiconductor gas sensor electrical performance detection tool disclosed by an embodiment of the present application is shown in the figure.

[0048] Figure 8 The channel gating module structure schematic view of the semiconductor gas sensor electrical performance detection tool disclosed by an embodiment of the present application is shown in the figure.

[0049] Figure 9 The system composition block diagram of the semiconductor gas sensor electrical performance detection system disclosed by an embodiment of the present application is shown in the figure.

[0050] Figure 10 The connection schematic view of the host computer module, data storage module, data processing module and data display module of the semiconductor gas sensor electrical performance detection system disclosed by an embodiment of the present application is shown in the figure.

[0051] Figure 11 The "detection execution management" interface schematic view of the host computer software in the host computer module of the semiconductor gas sensor electrical performance detection system disclosed by an embodiment of the present application is shown in the figure.

[0052] Figure 12 The "detection result management" interface schematic view of the host computer software in the host computer module of the semiconductor gas sensor electrical performance detection system disclosed by an embodiment of the present application is shown in the figure.

[0053] In the figure:

[0054] 1, semiconductor gas sensor; 2, voltage stabilizing power supply; 3, impedance analyzer; 4, substrate; 41, test unit; 411, test jack; 412, channel gating module; 413, operational amplification module; 4131, first operational amplification module; 4132, second operational amplification module; 4133, third operational amplification module; 414, power management module; 415, LED indicator; 416, AD acquisition circuit module; 5, single-chip microcomputer control module; 6, serial communication module; 7, host computer module; 8, human-computer interaction module; 9, data storage module; 100, data processing module; 200, data display module; 301, first CD4067 switch chip; 302, second CD4067 switch chip. DETAILED DESCRIPTION

[0055] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0056] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0057] In the description of the present invention, it should also be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0058] The present invention is described in further detail below with reference to the accompanying drawings:

[0059] like Figures 2-8 As shown, the present invention discloses a semiconductor gas sensor electrical performance testing tool, including a substrate 4, on which is disposed a single-chip microcomputer control module 5, a serial communication module 6, and multiple rows of test units 41. Each row of test units 41 is provided with a power management module 414, an operational amplifier module 413, a channel selection module 412, and multiple test sockets 411 for inserting semiconductor gas sensors. The structure and circuit composition of each row of test units 41 are the same. Only the composition of one test unit 41 is described here.

[0060] In each row of test units 41, the operational amplifier module 413 includes a first operational amplifier module 4131, a second operational amplifier module 4132, and a third operational amplifier module 4133. The power management module 414 supplies power to the first operational amplifier module 4131, the second operational amplifier module 4132, the third operational amplifier module 4133, the channel gating module 412, the hot source voltage pin ends of the plurality of test jacks 41, and the aging voltage pin ends of the plurality of test jacks 41. The hot source voltage pin ends of the plurality of test jacks 41 are connected in parallel to the input end of the first operational amplifier module 4131. The aging voltage pin ends of the plurality of test jacks 41 are connected in parallel to the input end of the second operational amplifier module 4132. The output end of the first operational amplifier module 4131, the output end of the second operational amplifier module 4132, and the load voltage pin end of each test jack 41 are respectively connected to the input end of the channel gating module 412. The gating control end of the channel gating module 412 is connected to the single-chip microcomputer control module 5. The output end of the channel gating module 412 is connected to the input end of the third operational amplifier module 4133. The output end of the third operational amplifier module 4133 is connected to the single-chip microcomputer control module 5. The single-chip microcomputer control module 5 is used to collect the hot source voltage, the aging voltage, and the load voltage of the semiconductor gas sensor 1 inserted into each test jack 411.

[0061] In this embodiment, by arranging the substrate 41, the single-chip microcomputer control module 5 and the plurality of rows of test units 41 are arranged on the substrate 41. Each row of test units 41 is provided with the power management module 414, the operational amplifier module 413, the channel gating module 412, and the plurality of test jacks 411 for inserting the semiconductor gas sensor 1. Batch detection of the plurality of semiconductor gas sensors 1 can be realized, and the detection efficiency of the semiconductor gas sensor 1 is greatly improved.

[0062] Specifically,

[0063] As shown in Figures 3-4 In the above embodiment, preferably, in each row of test units 41, each test jack 411 is circularly arranged. The hot source voltage pin end, the aging voltage pin end, the load voltage pin end, and the GND end of each test jack 411 correspond to the pins of the semiconductor gas sensor 1 one by one. A polarity mark is arranged on each test jack 411 to avoid reverse insertion of the semiconductor gas sensor 1. Each test jack 411 is provided with one LED indicator for prompting whether the semiconductor gas sensor is inserted into the test jack 411. When the semiconductor gas sensor 1 is inserted into the test jack 411, the LED indicator is lit. When the semiconductor gas sensor 1 in the test jack 411 is pulled out, the LED indicator is extinguished.

[0064] In the above embodiment, preferably, the substrate 1 is divided into 8 independent test units 41, each test unit 41 has 27 test sockets 411, each test socket 411 corresponds to a semiconductor gas sensor 1, and the substrate 1 can support a maximum of 216 semiconductor gas sensor 1 samples for simultaneous monitoring.

[0065] like Figure 5 As shown in the figure, it is a typical application circuit diagram of the semiconductor gas sensor 1, where V A Represents the aging voltage; V H represents the heat source voltage; R H is the thermal source resistance at both ends of pins 1 and 4 of the semiconductor gas sensor 1; Rs is the internal resistance of the sensor. The resistance value of Rs will change with the different characteristics of the surrounding gas, that is, the resistance value of Rs is the value that needs to be calculated; R L is the load resistance; V L is the load voltage.

[0066] In the above embodiment, preferably, the load voltage of the semiconductor gas sensor 1 in each test socket 411 is collected by the AD acquisition circuit module 416 and then electrically connected to the input end of the channel selection module 412. Specifically, Figure 6 As shown, this embodiment selects Figure 3 Take the test jacks 1 to 5 of the first unit on the far right of the figure as an example. Figure 6 As shown in (a), pin 1 of the semiconductor gas sensor 1 inserted into the test socket 411 numbered 1 is connected to the heat source voltage Signal_5V_1, pin 3 of the semiconductor gas sensor 1 is connected to the aging voltage Signal_5V_11, and pin 2 of the semiconductor gas sensor 1 outputs the load voltage Signal1_0. Pin 2 of the semiconductor gas sensor 1 is also connected in parallel with pin 1 of the semiconductor gas sensor 1 and then connected to GND. A capacitor C114 is also connected in series between pin 1 of the semiconductor gas sensor 1 and pin 4 of the semiconductor gas sensor 1. The pin wiring method of the semiconductor gas sensor 1 disclosed in Figures (b), (c), (d), and (e) is consistent with that in Figure (a). , which will not be elaborated here, that is, in this embodiment, pin 4 of the semiconductor gas sensor 1 inserted into each test socket 411 is connected in parallel to the heat source voltage Signal_5V_1, and pin 3 is connected in parallel to the aging voltage Signal_5V_11. Pin 2 of the semiconductor gas sensor 1 inserted into each test socket 411 outputs load voltages Signal1_0, Signal1_1, Signal1_2, Signal1_3, and Signal1_4 respectively. In this embodiment, the aging voltage Signal_5V_11 and the heat source voltage Signal_5V_1 are both provided by the power management module 414 in the same test unit 41.

[0067] As Figure 7 shown in the above embodiment, preferably, the first operational amplification module 4131 comprises an operational amplifier U1, and the second operational amplification module 4132 comprises an operational amplifier U2; wherein the heat source voltage pin ends of the plurality of test jacks 411 are connected in parallel to one end of a resistor R72, the other end of the resistor R72 is connected in parallel to a resistor R74, and the resistor R74 is connected to a positive input terminal of the operational amplifier U1; the other end of the resistor R74 is connected to GND. The inverting input terminal of the operational amplifier U1 is connected in parallel to the output terminal of the operational amplifier U1, and the output terminal of the operational amplifier U1 is connected to an input terminal of the channel gating module 412. The aging voltage pin ends of the plurality of test jacks 411 are connected in parallel to one end of a resistor R73, the other end of the resistor R73 is connected in parallel to a resistor R76, and the resistor R76 is connected to a positive input terminal of the operational amplifier U2; the other end of the resistor R76 is connected to GND. The inverting input terminal of the operational amplifier U2 is connected in parallel to the output terminal of the operational amplifier U2, and the output terminal of the operational amplifier U2 is connected to the input terminal of the channel gating module 412.

[0068] In the above embodiment, preferably, the third operational amplification module comprises an operational amplifier U3 and an operational amplifier U4; an output terminal of the channel gating module is connected to one end of a resistor R82, the other end of the resistor R82 is connected in parallel to one end of a capacitor C118, and the capacitor C118 is connected to a positive input terminal of the operational amplifier U3; the other end of the capacitor C118 is connected to GND. The inverting input terminal of the operational amplifier U3 is connected in parallel to the output terminal of the operational amplifier U3, and the output terminal of the operational amplifier U3 is connected to one end of a resistor R83; the other end of the resistor R83 is connected in parallel to one end of a resistor R84, and the resistor R84 is connected to a positive input terminal of the operational amplifier U4; the other end of the resistor R84 is connected to GND. The inverting input terminal of the operational amplifier U4 is connected in parallel to the output terminal of the operational amplifier U4, and the output terminal of the operational amplifier U4 is connected to the single-chip microcomputer control module 5.

[0069] As Figure 8 shown in the above embodiment, within each row of test units 41, the channel gating module 412 comprises at least one CD4067 switch chip; a gating control pin of the CD4067 switch chip is connected to the single-chip microcomputer control module 5, I0-I15 input pins of the CD4067 switch chip are respectively connected to corresponding load voltage pin ends, output terminals of the operational amplifier U1, and output terminals of the operational amplifier U2, and a common output terminal of the CD4067 switch chip is connected to a positive input terminal of the operational amplifier U3.

[0070] In the above embodiment, preferably, the channel gating module 412 in the present embodiment comprises a first CD4067 switch chip 301 and a second CD4067 switch chip 302; specifically, the common output end of the first CD4067 switch chip 301 is connected with the I0 end of the second CD4067 switch chip 302, and the common output end of the second CD4067 switch chip 302 is electrically connected with the positive input end of the operational amplifier U3 as an output end; the gating control pin of the first CD4067 switch chip 301 and the gating control pin of the second CD4067 switch chip 302 are respectively connected with the GPIO pin of the single-chip microcomputer control module 5, and the single-chip microcomputer control module 5 realizes the gating of the I0-I15 input pins of the first CD4067 switch chip 301 and the second CD4067 switch chip 302 through different high and low level combination logics. The channel gating module 412 in the present embodiment can realize the gating of 27 paths of load voltages, 1 path of heat source voltages and 1 path of aging voltages in each test unit 41. The INHIBIT pin of the first CD4067 switch chip 301 and the INHIBIT pin of the second CD4067 switch chip 302 are enable pins, and the low level is effective.

[0071] As shown in Figures 6-8 In the above embodiment, the trends of the heat source voltage, the aging voltage and the load voltage signals are as follows:

[0072] The heat source voltage Signal_5V_1 and the aging voltage Signal_5V_11 of the semiconductor gas sensor 1 in the test jack 411 in the same test unit 41 are respectively completed with first-order operational amplification after passing through the operational amplifier U1 and the operational amplifier U2, and the amplification factor is 0.5 times, and then enter the channel gating module 412, and after being gated, enter the second-order operational amplifiers U3 and U4, and the amplification factor is 0.6 times, and finally enter the AD sampling IO port of the single-chip microcomputer control module 5 to complete the AD value sampling of the heat source voltage and the aging voltage, and the final amplification factor is 0.3 times.

[0073] The load voltages Signal1_0, Signal1_1, Signal1_2, Signal1_3 and Signal1_4 numbered 1-5 in the same test unit 41 first respectively enter the channel gating module 412, and after being gated, enter the operational amplifiers U3 and U4, and the amplification factor is 0.6 times, and finally enter the AD sampling IO port of the single-chip microcomputer control module 5 to complete the AD value sampling of the load voltages.

[0074] In the above embodiment, preferably, a voltage stabilizing power supply 2 is further included, and the voltage stabilizing power supply 2 is used to supply power for the single-chip microcomputer control module 5 and the power management module 414 in each row of test units 41.

[0075] As shown in Figures 9-10As shown, the application discloses a kind of semiconductor gas sensor electrical performance detection tool, including the semiconductor gas sensor electrical performance detection tool of preceding, still include:

[0076] Host computer module 7, host computer module 7 is connected with single-chip microcomputer control module 5 by serial communication module 6, host computer module 7 is used to issue acquisition instruction to single-chip microcomputer control module 5 and the original AD value of heat source voltage, aging voltage and load voltage collected by single-chip microcomputer control module 5 is calculated and data processing;

[0077] Data processing module 100, data processing module 100 is connected with host computer module 7, data processing module 100 is used to calculate and data process the original AD value of heat source voltage, aging voltage and load voltage collected by single-chip microcomputer control module 5;

[0078] Data display module 200, data display module 200 is connected with host computer module 7, data display module 200 is used to show the heat source voltage, aging voltage, load voltage and internal resistance Rs value of the semiconductor gas sensor 1 to be measured after host computer module 7 processing;

[0079] Data storage module 9, data storage module 9 is connected with host computer module 7, data storage module 9 is used to store the data processing result and the value collected by host computer module 7, and support data report online viewing and data report offline export.

[0080] Man-machine interaction module 8, man-machine interaction module 8 is connected with host computer module 7, man-machine interaction module 8 is used for parameter configuration input and button control.

[0081] In the above embodiment, preferably, host computer module 7 includes host computer software, the "detection execution management" interface of host computer software is as shown in Figure 11 It includes the data group window corresponding to each test jack 41 in each test unit 41, each data group window includes the station number, heat source voltage, aging voltage, load voltage, internal resistance Rs value and report name of test jack 41, component model, type, test interval time, test times of semiconductor gas sensor 1 to be measured and the like.

[0082] In the above embodiment, preferably, the "detection result management" interface of host computer software is as shown in Figure 11 It includes the detection report in Excel format, and the specific content includes report number, test times, station number of test jack 411, heat source supply voltage, aging supply voltage, load supply voltage and internal resistance Rs value.

[0083] The application further discloses a semiconductor gas sensor electrical performance detection method applied to the semiconductor gas sensor electrical performance detection system.

[0084] 1, the semiconductor gas sensor 1 is inserted into the test jack 411 corresponding to the substrate 4;

[0085] Specifically, the semiconductor gas sensor 1 to be detected is inserted into the test jack 411 of the corresponding test unit 41 of the substrate 4, and the voltage and current are provided for the single-chip microcomputer control module 5 and the plurality of test units 41 by the voltage stabilizing power supply 2, so as to ensure that the modules of the test units 41 are normally started and worked;

[0086] 2, the host computer module 7 sends a parameter acquisition instruction to the single-chip microcomputer control module 5 according to the preset test jack 411 station number, detection time interval and detection times;

[0087] 3, the single-chip microcomputer control module 5 receives the parameter acquisition instruction, and controls the channel gating module 412 to connect the aging voltage, load voltage and heat source voltage pin ends of the corresponding test jack 411;

[0088] 4, the single-chip microcomputer control module 5 acquires the original AD values of the aging voltage, load voltage and heat source voltage of the semiconductor gas sensor 1 in the corresponding test jack 411, and sends the acquired original AD values to the host computer module 7;

[0089] Specifically,

[0090] The single-chip microcomputer control module 5 controls the channel gating module 412 through the high and low levels of the GPIO, and opens the channel corresponding to the AD voltage to be collected; the voltage of the heat source voltage pin of the semiconductor gas sensor 1 to be detected is amplified by the first operational amplifier module 4131, then enters the channel gating module 412, then passes through the third operational amplifier module 4133, and then enters the IO interface corresponding to the ADC processing of the single-chip microcomputer control module 5; the voltage of the aging voltage pin of the semiconductor gas sensor 1 to be detected is amplified by the second operational amplifier module 4132, then enters the channel gating module 412, then passes through the third operational amplifier module 4133, and then enters the IO interface corresponding to the ADC processing of the single-chip microcomputer control module 5; the load voltage pin of the semiconductor gas sensor 1 to be detected passes through the channel gating module 412, then is amplified by the third operational amplifier module 4133, and then enters the IO interface corresponding to the ADC processing of the single-chip microcomputer control module 5;

[0091] The single-chip microcomputer control module 5 acquires the original AD parameter value of the semiconductor gas sensor 1 to be detected, converts the analog voltage signals of the heat source voltage, the aging voltage and the load voltage of the semiconductor gas sensor 1 collected by the internal ADC collection function of the single-chip microcomputer control module 5 into digital voltage signals, and encapsulates the converted digital voltage signals into corresponding AD voltage collection data packets according to a predetermined protocol format;

[0092] The single-chip microcomputer control module 5 transmits the encapsulated AD voltage collection data packets to the host computer module 7 through the serial communication module 6.

[0093] 5、The host computer module 7 calculates the heat source voltage, the aging voltage, the load voltage and the internal resistance Rs value of the semiconductor gas sensor 1 to be detected according to the original AD value, and displays the calculation results through the data display module 200, thereby completing the detection of the semiconductor gas sensor 1 to be detected.

[0094] Specifically includes:

[0095] After the host computer software of the host computer module 7 receives the response data packet sent by the single-chip microcomputer control module 5, the original AD collection value is processed, and after the data processing is completed, the corresponding heat source voltage, aging voltage, load voltage and internal resistance Rs value are displayed on the software interface, at this time, the electrical performance detection of the semiconductor gas sensor 1 is completed.

[0096] Further, in the above embodiment, the host computer module 7 processes the original AD collection value, and the data processing algorithm specifically includes:

[0097] 1), Voltage AD value conversion formula:

[0098]

[0099] In the formula, Y is the voltage value to be solved; X is the original AD value returned by the single-chip microcomputer control module 5, which is hexadecimal and needs to be converted to decimal for calculation; n is the binary bit number of AD conversion; V REF is the AD conversion reference voltage; B is the amplification multiple of the corresponding operational amplifier circuit module; C is the voltage correction value;

[0100] 2), In the above formula, the calculation formula of the voltage correction value C is:

[0101] C=P-Q

[0102] In the formula, P is the actual voltage value (i.e. measured value) measured by using a standard voltage detection instrument, and Q is the AD conversion voltage value (i.e. calculated value) calculated by formula (1) when C=0;

[0103] 3), Sensor internal resistance Rs calculation formula:

[0104]

[0105] Where V A is the aging voltage, V L is the load voltage, R L is the load resistance, R s is the internal resistance of the sensor (refer to Figure 5 Typical application circuit diagram of semiconductor gas sensor 1 in

[0106] Also includes:

[0107] After the test is completed, the host computer module 7 can also export the test report in Excel format, which includes the test number, test jack station number, heat source voltage, aging voltage, load voltage and internal resistance Rs value (such as Figure 12 shown).

[0108] In the above embodiment, before starting the test, the reset and self-test functions of the test tool are also included, specifically including:

[0109] Reset the detection tool by clicking the "Reset" button to make the single-chip control module 5 perform a reset operation, and control the channel selection module 412 and each test jack 411 to restore to the initial state;

[0110] Detect the self-test function of the tooling. By clicking the "Self-test" button, the host computer module 7 controls the single-chip control module 5 to calculate the original AD value of the aging voltage and heat source voltage of the semiconductor gas sensor 1 pin. The values ​​are calculated by the host computer module 7 and displayed on the software interface of the host computer. When the measured aging voltage and heat source voltage are between 4.8-5.2V, it is judged to be passed. Otherwise, the self-test fails and the test of the test jack of the corresponding station number is terminated.

[0111] In the above embodiment, the "reset" button and the "self-test" button can be set as physical buttons separately, or can be implemented by setting virtual buttons on the interface of the host computer software.

[0112] In one embodiment, the Figaro TGS2619 gas sensor is used as the test object, referring to Figure 5 As shown, the load resistor R L The resistance is 1KΩ; the heat source voltage V H and aging voltage V A The reference voltage of ADC is 3.3V, that is, V REF is 3.3V; the binary bit of AD conversion is 12 bits, that is, n is 12; the first operational amplifier module and the second operational amplifier module are in the heat source voltage V H and aging voltage VA The amplification factor of the voltage AD is 0.3, and the load voltage V L The amplification factor B of the voltage AD is 0.6. At this time, the voltage AD value conversion formula is changed to:

[0113]

[0114] In the above embodiment, the determination method of the voltage correction value C in the data processing algorithm is:

[0115] A plug-in resistor with a resistance of 1KΩ is selected, i.e. Rs is 1KΩ, and Rs is inserted into the terminals of pins 2 and 3 as shown in the figure: Figure 5

[0116] Run the upper computer software, enter the voltage correction value determination mode (i.e. let C=0), and detect, record the heat source voltage, aging voltage and load voltage of the test jack of each station number displayed on the software interface, and make a good record.

[0117] Use a digital multimeter to measure the heat source voltage, aging voltage and load voltage of the test jack of each station number, and make a good record.

[0118] Use the calculation formula of the voltage correction value C to subtract the actual measurement value of the heat source voltage, aging voltage and load voltage of the test jack of each station number from the calculated value in step 2, i.e. to obtain the voltage correction value C of each station number, and import the voltage correction value C into the upper computer software in the form of a list. Thus, the determination of the voltage correction value C is completed.

[0119] The above is only a preferred embodiment of the present application and is not used to limit the present application. For those skilled in the art, the present application can have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.​

Claims

1. A semiconductor gas sensor electrical property detection tool, characterized by, The invention comprises a substrate on which a single-chip microcomputer control module and multiple rows of test units are provided, wherein each row of the test units is provided with a power management module, a first operational amplifier module, a second operational amplifier module, a third operational amplifier module, a channel selection module, and multiple test jacks for inserting semiconductor gas sensors; In each row of the test units, the power management module supplies power to the first operational amplifier module, the second operational amplifier module, the third operational amplifier module, the channel selection module, the heat source voltage pin ends of the plurality of test jacks, and the aging voltage pin ends of the plurality of test jacks respectively; the heat source voltage pin ends of the plurality of test jacks are electrically connected to the input end of the first operational amplifier module after being connected in parallel, and the aging voltage pin ends of the plurality of test jacks are electrically connected to the input end of the second operational amplifier module after being connected in parallel, the output end of the first operational amplifier module, the output end of the second operational amplifier module, and the load voltage pin end of each test jack are respectively connected to the input end of the channel selection module, and the selection control end of the channel selection module is electrically connected to the single-chip control module; The output end of the channel selection module is connected to the input end of the third operational amplifier module, and the output end of the third operational amplifier module is electrically connected to the single-chip control module, and the single-chip control module is used to collect the heat source voltage, aging voltage and load voltage values ​​of each semiconductor gas sensor inserted into the test jack; In each row of the test units, the heat source voltage pin, the aging voltage pin, the load voltage pin, and the GND pin on each test socket correspond one-to-one to the pins of the semiconductor gas sensor; each test socket is equipped with an LED indicator light for indicating whether the semiconductor gas sensor is inserted into the test socket; The first operational amplifier module includes an operational amplifier U1, and the second operational amplifier module includes an operational amplifier U2; The heat source voltage pins of the plurality of test jacks are connected in parallel and electrically connected to the non-inverting input of the operational amplifier U1, and the inverting input of the operational amplifier U1 is connected in parallel with the output of the operational amplifier U1 and electrically connected to the input of the channel selection module; The aging voltage pins of the plurality of test jacks are connected in parallel and electrically connected to the non-inverting input of the operational amplifier U2; the inverting input of the operational amplifier U2 is connected in parallel to the output of the operational amplifier U2 and electrically connected to the input of the channel selection module; The third operational amplifier module includes an operational amplifier U3, an operational amplifier U4; The output end of the channel selection module is electrically connected to the non-inverting input end of the operational amplifier U3, the inverting input end of the operational amplifier U3 is connected in parallel with the output end of the operational amplifier U3 and then electrically connected to the non-inverting input end of the operational amplifier U4, and the inverting input end of the operational amplifier U4 is connected in parallel with the output end of the operational amplifier U4 and then electrically connected to the single-chip control module.

2. The semiconductor gas sensor electrical performance detection tool of claim 1, wherein, In each row of the test units, the channel gating module includes at least one CD4067 switch chip; The strobe control pin of the CD4067 switch chip is electrically connected to the single-chip control module, the I0-I15 input pins of the CD4067 switch chip are electrically connected to the corresponding load voltage pin, the output end of the operational amplifier U1 and the output end of the operational amplifier U2, respectively, and the common output end of the CD4067 switch chip is electrically connected to the non-inverting input end of the operational amplifier U3; When two CD4067 switch chips are connected in series, the common output terminal of one of the CD4067 switch chips is electrically connected to one of the I0-I15 input terminals of the other CD4067 switch chip.

3. The semiconductor gas sensor electrical performance detection tool of claim 1, wherein, Also includes a regulated power supply; The voltage-stabilized power supply is used to supply power to the single-chip microcomputer control module and the power management module in each row of the test units.

4. A system for detecting electrical properties of a semiconductor gas sensor, comprising the tool for detecting electrical properties of a semiconductor gas sensor according to any one of claims 1 to 3, characterized in that Also includes: A host computer module, the host computer module is in communication with the single-chip control module, the host computer module is used to send acquisition instructions to the single-chip control module and perform data processing on the original AD values ​​of the heat source voltage, aging voltage and load voltage collected by the single-chip control module; A data display module, the data display module is communicatively connected to the host computer module, and the data display module is used to display the heat source voltage, aging voltage, load voltage and internal resistance Rs value of the semiconductor gas sensor to be tested after being processed by the host computer module; A data storage module, the data storage module is communicatively connected to the host computer module, and the data storage module is used to store the values ​​and data processing results collected by the host computer module; A human-computer interaction module is communicatively connected to the host computer module and is used for parameter configuration input and button control.

5. A method for detecting electrical properties of a semiconductor gas sensor, applied to the system for detecting electrical properties of a semiconductor gas sensor according to claim 4, characterized in that, include: Inserting the semiconductor gas sensor into the corresponding test hole of the substrate; The host computer module sends parameter collection instructions to the single chip control module according to the preset test socket station number, detection time interval and detection number; The single chip control module receives the parameter acquisition instruction and controls the channel selection module to connect the aging voltage, load voltage and heat source voltage pins corresponding to the test jack; The single chip control module obtains the original AD values ​​of the aging voltage, load voltage and heat source voltage of the semiconductor gas sensor in the corresponding test socket, and sends the obtained original AD values ​​to the host computer module; The host computer module calculates the heat source voltage, aging voltage, load voltage and internal resistance Rs value of the semiconductor gas sensor to be tested based on the above-mentioned original AD value, and displays the calculation results through the data display module to complete the detection of the semiconductor gas sensor to be tested.

6. The method according to claim 5, wherein The single chip control module sends the acquired original AD value to the host computer module, specifically including: The single-chip microcomputer control module converts the analog voltage signals of the heat source voltage, the aging voltage and the load voltage of the semiconductor gas sensor collected by the internal ADC collection function into digital voltage signals, and encapsulates the converted digital voltage signals into corresponding AD voltage collection data packets according to a predetermined protocol format. The single-chip microcomputer control module transmits the encapsulated AD voltage collection data packets to the upper computer module.

7. The method according to claim 5, wherein Further comprising: After the detection is completed, the upper computer module can also export an Excel format detection report. The detection report includes the test times, the test jack station number, the heat source voltage, the aging voltage, the load voltage and the internal resistance Rs value.

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