Method for preparing high-purity copper target material with strong texture
High-purity copper sputtering targets with strong texture were prepared by annealing, cold rolling, quenching and polishing. This method solved the problems of complexity, large grain size and low main texture of existing methods, and achieved high sputtering rate and uniform thin film effect, which is convenient for industrial production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHENGZHOU UNIV
- Filing Date
- 2023-09-13
- Publication Date
- 2026-06-12
AI Technical Summary
Existing methods for preparing high-purity copper sputtering targets are complex and have large grain sizes and low proportions of main texture, making it difficult to meet the semiconductor industry's requirements for high sputtering rates and uniform thin films.
High-purity single-crystal copper blocks are prepared by annealing polycrystalline copper blocks, and then cold-rolled to control grain orientation. Combined with quenching and polishing, a highly textured high-purity copper target material is prepared. The amount of thinning by cold rolling and the quenching temperature are controlled to regulate the grain size and the proportion of the main texture.
It has achieved high-purity copper targets with grain size less than 30μm and main texture ratio of more than 50%, which improves the magnetron sputtering film formation rate and film quality, simplifies the process flow, and facilitates industrial production.
Smart Images
Figure BDA0004447024710000091
Abstract
Description
Technical Field
[0001] This application belongs to the field of magnetron sputtering target preparation technology, specifically relating to a method for preparing a highly textured high-purity copper target. Background Technology
[0002] Magnetron sputtering is one of the main technologies for preparing thin film materials. It utilizes ions generated by an ion source, which are accelerated and focused in a vacuum to form a high-speed ion beam that bombards a solid surface. The high-speed ions and the atoms on the solid surface exchange kinetic energy, causing the atoms on the solid surface to leave the solid and deposit on the substrate surface. The bombarded solid is the target material.
[0003] Sputtering targets are an extremely important key material for manufacturing semiconductor chips. The internal structure of the sputtering target plays an important role in the sputtering rate and the uniformity of the deposited film.
[0004] Copper, as a common metallic material, has good resistance to electromigration and electrical conductivity. High-purity copper, especially with a purity of 6N or higher, exhibits even superior performance. High-purity copper sputtering targets can be used in the semiconductor chip and flat panel display industries.
[0005] Patent CN114892135A discloses a high-purity copper target material and its preparation method and application. The high-purity copper ingot is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, static pressing and cold rolling in sequence to obtain a high-purity copper target material that is not fully recrystallized (recrystallization degree is 20-40%). However, the process of this invention is relatively complicated.
[0006] Patent CN103510055B discloses a method for preparing a high-purity copper sputtering target, comprising: preheating, forging, heat treatment, rolling, and further heat treatment to obtain a copper target blank, and finally machining the copper target blank to form a high-purity copper target. Although the high-purity copper target prepared by this method has a better sputtering direction, the grain size is relatively large, approaching 100 μm.
[0007] Patent CN101509125B discloses a method for preparing copper sputtering targets, in which molten copper is dripped onto a cold plate to cool and form copper grains, and then the copper is hot-pressed into copper sputtering targets. This method is complex and costly.
[0008] Patent CN110578126B discloses a method for preparing high-purity copper sputtering targets of various specifications, including the following steps: preheating, hot rolling, and machining. The high-purity copper sputtering targets prepared by this method have large grains, with an average grain size ≤80μm and a low proportion of main texture.
[0009] Patent CN113817995A discloses a high-purity copper target material and its preparation method, which involves sequentially forging, stretching, first heat treatment, rolling, and second heat treatment of a copper target billet. While the copper target material preparation method provided by this invention can meet the requirements of industries such as semiconductors, the resulting copper target material has a grain size ≥50μm and a low proportion of main texture.
[0010] Therefore, there is an urgent need for a method to prepare a target material that is simple to process, has a high proportion of main texture, and has a small grain size. Summary of the Invention
[0011] In view of this, some embodiments disclose a method for preparing a highly textured high-purity copper target, including:
[0012] High-purity single-crystal copper blocks are prepared by annealing polycrystalline copper blocks;
[0013] High-purity single-crystal copper blocks are cold-rolled with the cold rolling direction parallel to the rolling surface. The cold rolling thinning amount is 80% to 98%, and the deformation amount per pass is 5% to 20%.
[0014] The high-purity single-crystal copper block after cold rolling is quenched and then polished to obtain a highly textured high-purity copper target. The grain size in the highly textured high-purity copper target is less than 30 μm, and the main texture accounts for more than 50% of the target.
[0015] Some embodiments disclose a method for preparing highly textured high-purity copper targets, wherein the cold rolling is unidirectional cold rolling or cross cold rolling.
[0016] Some embodiments disclose a method for preparing highly textured high-purity copper targets, wherein the cold rolling temperature is less than or equal to 80°C.
[0017] Some embodiments disclose a method for preparing highly textured high-purity copper targets, wherein the cold rolling thinning amount is 90% to 95% and the pressing deformation amount per pass is 10% to 15%.
[0018] Some embodiments disclose a method for preparing highly textured high-purity copper targets, wherein the quenching temperature is 100℃~600℃ and the quenching holding time is 2min~60min.
[0019] Some embodiments disclose a method for preparing highly textured high-purity copper targets, wherein the quenching temperature is 100℃~300℃ and the quenching holding time is 2min~20min.
[0020] Some embodiments disclose methods for preparing highly textured high-purity copper targets, wherein polishing processes include mechanical polishing and electrolytic polishing.
[0021] Some embodiments disclose methods for preparing highly textured high-purity copper targets, including:
[0022] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The dimensions of the obtained high-purity single-crystal copper blocks were 30mm × 30mm × 50mm, wherein the grain orientation of one 30mm × 50mm plane was {100}. <001> ;
[0023] A 30mm × 50mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 90%, the pressing deformation amount per pass is 5%, and the cold rolling temperature is less than 50℃;
[0024] The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 400℃ for 15 minutes.
[0025] The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 25.3 μm, and the main texture accounts for 56% of the target.
[0026] Some embodiments disclose methods for preparing highly textured high-purity copper targets, including:
[0027] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm, wherein the grain orientation of one 40mm × 40mm plane was {110}. <001> ;
[0028] A 40mm × 40mm plane with a {110} crystal orientation of a high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 80%, the pressing deformation amount per pass is 10%, and the cold rolling temperature is less than 50℃;
[0029] The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 500℃ for 10 minutes.
[0030] The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 27.2 μm, and the main texture accounts for 52% of the target.
[0031] Some embodiments disclose methods for preparing highly textured high-purity copper targets, including:
[0032] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm, wherein the grain orientation of one 40mm × 40mm plane was {100}. <001> ;
[0033] A 40mm × 40mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 95%, the pressing deformation amount per pass is 10%, and the cold rolling temperature is less than 50℃;
[0034] The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 300℃ for 20 minutes.
[0035] The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 29.3 μm, and the main texture accounts for 62% of the target.
[0036] This invention discloses a method for preparing highly textured high-purity copper sputtering targets. The method involves annealing polycrystalline copper blocks to prepare high-purity single-crystal copper blocks, and then controlling the cold rolling and quenching conditions to regulate the texture and grain size of the high-purity single-crystal copper blocks. The resulting highly textured high-purity copper sputtering target has a small grain size and a high proportion of main texture. The highly textured high-purity copper sputtering target disclosed in this invention exhibits a high magnetron sputtering film deposition rate, good film quality, and uniform thickness distribution. This method solves the problem of uncontrollable texture orientation during polycrystalline copper rolling, is simple to operate, has a short process, and is easily scalable for industrial production. Detailed Implementation
[0037] The term "embodiment" used herein, as an example, is not necessarily to be construed as superior to or better than other embodiments. Performance testing in the embodiments of this application, unless otherwise specified, employs conventional testing methods in the art. It should be understood that the terminology used in this application is merely for describing particular implementations and is not intended to limit the scope of this disclosure.
[0038] Unless otherwise stated, the technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; other experimental methods and technical means not specifically mentioned in this application refer to experimental methods and technical means commonly used by one of ordinary skill in the art.
[0039] The terms “basic” and “approximately” used in this document are to describe small fluctuations. For example, they can mean less than or equal to ±5%, such as less than or equal to ±2%, such as less than or equal to ±1%, such as less than or equal to ±0.5%, such as less than or equal to ±0.2%, such as less than or equal to ±0.1%, such as less than or equal to ±0.05%. Numerical data presented or expressed in range format in this document are used for convenience and brevity only, and should therefore be flexibly interpreted to include not only the explicitly listed values that define the range, but also all independent values or subranges contained within that range. For example, a numerical range of “1–5%” should be interpreted to include not only the explicitly listed values from 1% to 5%, but also the independent values and subranges within the indicated range. Thus, this numerical range includes independent values such as 2%, 3.5%, and 4%, and subranges such as 1%–3%, 2%–4%, and 3%–5%, etc. This principle also applies to ranges that list only one value. Furthermore, this interpretation applies regardless of the width of the range or the characteristics described.
[0040] In this document, including in the claims, conjunctions such as "comprising," "including," "with," "having," "containing," "involving," and "accommodating" are understood to be open-ended, meaning "including but not limited to." Only the conjunctions "consisting of" and "composed of" are closed conjunctions.
[0041] To better illustrate the content of this application, numerous specific details are provided in the following detailed embodiments. Those skilled in the art should understand that this application can be implemented even without certain specific details. In the embodiments, some methods, means, instruments, and devices well-known to those skilled in the art are not described in detail in order to highlight the main points of this application.
[0042] Without conflict, the technical features disclosed in the embodiments of this application can be combined arbitrarily, and the resulting technical solution belongs to the content disclosed in the embodiments of this application.
[0043] In some embodiments, the preparation method of highly textured high-purity copper target material includes:
[0044] High-purity single-crystal copper blocks are prepared by annealing polycrystalline copper blocks; generally, the purity of the high-purity single-crystal copper obtained is 99.995% to 99.99995%, and the crystal plane index of the rolled surface of the high-purity single-crystal copper block is (001) and (110).
[0045] High-purity single-crystal copper blocks undergo cold rolling with the rolling direction parallel to the rolling surface. The cold rolling thinning amount is 80%–98%, and the deformation per pass is 5%–20%. After cold rolling, the grain orientation of the high-purity single-crystal copper block changes, with most grains concentrated in a certain orientation, known as preferred orientation or texture. The ratio of the number of grains with preferred orientation to the total number of grains is called the main texture ratio. The number of grains with preferred orientation in the high-purity single-crystal copper block varies with different cold rolling thinning amounts. In addition, during target sputtering, atoms on the target surface tend to be preferentially sputtered along the direction of the closest atomic packing. Therefore, by controlling the cold rolling thinning amount and adjusting the grain orientation in the high-purity single-crystal copper block, the main texture ratio in the target can be increased, thereby improving the sputtering rate and film quality of the target.
[0046] High-purity single-crystal copper blocks that have undergone cold rolling are quenched and then polished to obtain highly textured high-purity copper sputtering targets. The grain size of the highly textured high-purity copper sputtering targets is less than 30 μm, and the proportion of the main texture in the highly textured high-purity copper sputtering targets is greater than 50%. The quenching process can make the grain size of the obtained highly textured high-purity copper sputtering targets smaller. The grain boundary area of the highly textured high-purity copper sputtering targets with smaller grain size is larger, resulting in a faster sputtering rate.
[0047] In some implementations, cold rolling is unidirectional cold rolling or cross cold rolling. In some embodiments, unidirectional cold rolling is used, where the cold rolling direction is singular.
[0048] In some implementations, the cold rolling temperature is less than or equal to 80°C.
[0049] In some embodiments, the cold rolling thinning amount is 90% to 95%, and the compression deformation per pass is 10% to 15%.
[0050] In some implementations, the quenching temperature is 100℃ to 600℃, and the quenching holding time is 2 min to 60 min.
[0051] In some embodiments, the quenching temperature is 100℃~300℃, and the quenching holding time is 2min~20min.
[0052] In some implementations, the polishing process includes mechanical polishing and electrolytic polishing.
[0053] In some embodiments, the high-purity single-crystal copper block after quenching is mechanically polished to a surface roughness of 0.8 μm, and then electropolished in a phosphoric acid solution.
[0054] In some embodiments, the preparation method of the strongly textured high-purity copper target includes:
[0055] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The dimensions of the obtained high-purity single-crystal copper blocks were 30mm × 30mm × 50mm, wherein the grain orientation of one 30mm × 50mm plane was {100}. <001> ;
[0056] A 30mm × 50mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 90%, the pressing deformation amount per pass is 5%, and the cold rolling temperature is less than 50℃;
[0057] The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 400℃ for 15 minutes.
[0058] The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 25.3 μm, and the main texture accounts for 56% of the target.
[0059] In some embodiments, the preparation method of the strongly textured high-purity copper target includes:
[0060] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm, wherein the grain orientation of one 40mm × 40mm plane was {110}. <001> ;
[0061] A 40mm × 40mm plane with a {110} crystal orientation of a high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 80%, the pressing deformation amount per pass is 10%, and the cold rolling temperature is less than 50℃;
[0062] The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 500℃ for 10 minutes.
[0063] The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 27.2 μm, and the main texture accounts for 52% of the target.
[0064] In some embodiments, the preparation method of the strongly textured high-purity copper target includes:
[0065] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm, wherein the grain orientation of one 40mm × 40mm plane was {100}. <001> ;
[0066] A 40mm × 40mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 95%, the pressing deformation amount per pass is 10%, and the cold rolling temperature is less than 50℃;
[0067] The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 300℃ for 20 minutes.
[0068] The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 29.3 μm, and the main texture accounts for 62% of the target.
[0069] The technical details are further illustrated below with reference to the embodiments.
[0070] Example 1
[0071] The method for preparing a highly textured, high-purity copper target disclosed in Example 1 includes:
[0072] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 30mm × 30mm × 50mm and a purity of 99.9999%. The grain orientation of one 30mm × 50mm plane was {100}. <001> Where {100} represents the orientation of the crystal plane, <001> It indicates the rolling direction, and the normal of the crystal plane is perpendicular to it;
[0073] A 30mm × 50mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 90%, the pressing deformation per pass is 5%, the temperature is kept below 50℃ during the cold rolling process, and the heat preservation method is water cooling;
[0074] The box furnace is heated to 400°C at a heating rate of 10°C / min. The cold-rolled high-purity single-crystal copper block is placed in the box furnace and held for 15 minutes. Then it is quenched in ice water.
[0075] The quenched high-purity single-crystal copper block was mechanically polished to a surface roughness of 0.8 μm, then placed in a phosphoric acid solution for electrolytic polishing, washed, and dried to obtain a highly textured high-purity copper target.
[0076] The highly textured high-purity copper target material prepared in Example 1 was tested. Grain size was observed using a metallographic microscope, grain orientation was tested using EBSD, and grain size and the proportion of the main texture were statistically analyzed using Aztec. The test results are shown in Table 1. The results show that after rolling a 30mm × 50mm plane of high-purity single-crystal copper block, the grain size in the highly textured high-purity copper target material is 25.3μm, and the main texture orientation of the corresponding plane of the highly textured high-purity copper target material is {133}. <323> Having {133} <323> The proportion of oriented grains is 56%, indicating that the main texture accounts for 56% of the strong textured high-purity copper target material obtained in Example 1.
[0077] Example 2
[0078] The method for preparing a highly textured high-purity copper target disclosed in Example 2 includes:
[0079] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm and a purity of 99.99995%. The grain orientation of one 40mm × 40mm plane was {110}. <001> Where {110} represents the orientation of the crystal plane, <001> It indicates the rolling direction, and the normal of the crystal plane is perpendicular to it;
[0080] A 40mm × 40mm plane with a {110} crystal orientation of a high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 80%, the pressing deformation amount per pass is 10%, the temperature is kept below 50℃ during the cold rolling process, and the heat preservation method is water cooling;
[0081] The box furnace is heated to 500°C at a heating rate of 10°C / min. The cold-rolled high-purity single-crystal copper block is placed in the box furnace and held for 10 minutes. Then it is quenched in ice water.
[0082] The quenched high-purity single-crystal copper block was mechanically polished to a surface roughness of 0.8 μm, then placed in a phosphoric acid solution for electrolytic polishing, washed, and dried to obtain a highly textured high-purity copper target.
[0083] The highly textured high-purity copper target material prepared in Example 2 was tested. Grain size was observed using a metallographic microscope, grain orientation was tested using EBSD, and grain size and the proportion of the main texture were statistically analyzed using Aztec. The test results are shown in Table 1. The results show that after rolling a 40mm × 40mm plane of high-purity single-crystal copper block, the grain size in the resulting highly textured high-purity copper target material is 27.2 μm, and the main texture orientation of the corresponding plane is {112}. <512> Having {112} <512> The proportion of oriented grains is 52%, indicating that the main texture accounts for 52% of the strong textured high-purity copper target material obtained in Example 2.
[0084] Example 3
[0085] The method for preparing a highly textured high-purity copper target disclosed in Example 3 includes:
[0086] High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm and a purity of 99.9999%. The grain orientation of one 40mm × 40mm plane was {100}. <001> Where {100} represents the orientation of the crystal plane, <001> It indicates the rolling direction, and the normal of the crystal plane is perpendicular to it;
[0087] A 40mm × 40mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 95%, the pressing deformation amount per pass is 10%, the temperature is kept below 50℃ during the cold rolling process, and the heat preservation method is water cooling;
[0088] The box furnace is heated to 300°C at a heating rate of 10°C / min. The cold-rolled high-purity single-crystal copper block is placed in the box furnace and held for 20 minutes. Then it is quenched in ice water.
[0089] The quenched high-purity single-crystal copper block was mechanically polished to a surface roughness of 0.8 μm, then placed in a phosphoric acid solution for electrolytic polishing, washed, and dried to obtain a highly textured high-purity copper target.
[0090] The highly textured high-purity copper target material prepared in Example 3 was tested. Grain size was observed using a metallographic microscope, grain orientation was tested using EBSD, and grain size and the proportion of the main texture were statistically analyzed using Aztec. The test results are shown in Table 1. The results show that after rolling a 40mm × 40mm plane of high-purity single-crystal copper block, the grain size in the highly textured high-purity copper target material is 29.3 μm, and the main texture orientation of the corresponding plane of the highly textured high-purity copper target material is {110}. <123> Having {110} <123> The proportion of oriented grains is 62%, indicating that the main texture accounts for 62% of the strong textured high-purity copper target material obtained in Example 2.
[0091] The highly textured high-purity copper targets prepared in Examples 1 to 3 were tested. The grain size was observed by metallographic microscope, the grain orientation was tested by EBSD, and the grain size and main texture ratio were statistically analyzed by Aztec. The test results are shown in Table 1.
[0092] Table 1. Test results of the strongly textured high-purity copper sputtering targets prepared in Examples 1-3
[0093]
[0094] As shown in Table 1, the grain size of the highly textured high-purity copper target material prepared by the embodiments of the present invention is less than 30 μm, and the main texture accounts for more than 50%.
[0095] This invention discloses a method for preparing highly textured high-purity copper sputtering targets. The method involves annealing polycrystalline copper blocks to prepare high-purity single-crystal copper blocks, and then controlling the cold rolling and quenching conditions to regulate the texture and grain size of the high-purity single-crystal copper blocks. The resulting highly textured high-purity copper sputtering target has a small grain size and a high proportion of main texture. The highly textured high-purity copper sputtering target disclosed in this invention exhibits a high magnetron sputtering film deposition rate, good film quality, and uniform thickness distribution. This method solves the problem of uncontrollable texture orientation during polycrystalline copper rolling, is simple to operate, has a short process, and is easily scalable for industrial production.
[0096] The technical solutions and technical details disclosed in the embodiments of this application are merely illustrative of the inventive concept of this application and do not constitute a limitation on the technical solutions of this application. Any conventional changes, substitutions or combinations made to the technical details disclosed in this application have the same inventive concept as this application and are within the protection scope of the claims of this application.
Claims
1. A method for preparing highly textured high-purity copper target material, characterized in that, include: High-purity single-crystal copper blocks are prepared by annealing polycrystalline copper blocks; wherein the grain orientation of one plane of the high-purity single-crystal copper block is {100}. <001> Or {110} <001> ; High-purity single-crystal copper blocks undergo cold rolling; wherein the cold rolling plane is {100} or {110}, and the cold rolling direction is parallel to... <001> The cold rolling thinning amount is 80% to 98%, and the pressing deformation per pass is 5% to 20%; the cold rolling temperature is less than or equal to 80°C. High-purity single-crystal copper blocks that have undergone cold rolling are quenched and then polished to obtain highly textured high-purity copper targets. The quenching temperature is 100℃~600℃ and the quenching holding time is 2min~60min. The grain size in the highly textured high-purity copper targets is less than 30μm and the proportion of the main texture in the highly textured high-purity copper targets is greater than 50%.
2. The method for preparing a highly textured high-purity copper target according to claim 1, characterized in that, The cold rolling is either unidirectional cold rolling or cross cold rolling.
3. The method for preparing a highly textured high-purity copper target according to claim 1, characterized in that, The cold rolling thinning amount is 90% to 95%, and the pressing deformation amount per pass is 10% to 15%.
4. The method for preparing a highly textured high-purity copper target according to claim 1, characterized in that, The quenching temperature is 100℃~300℃, and the quenching holding time is 2min~20min.
5. The method for preparing a highly textured high-purity copper target according to claim 1, characterized in that, The polishing process includes mechanical polishing and electrolytic polishing.
6. The method for preparing a highly textured high-purity copper target according to claim 1, characterized in that, include: High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The dimensions of the obtained high-purity single-crystal copper blocks were 30mm × 30mm × 50mm, wherein the grain orientation of one 30mm × 50mm plane was {100}. <001> ; A 30mm × 50mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 90%, the pressing deformation amount per pass is 5%, and the cold rolling temperature is less than 50℃; The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 400℃ for 15 minutes. The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 25.3 μm, and the main texture accounts for 56% of the target.
7. The method for preparing a highly textured high-purity copper target according to claim 1, characterized in that, include: High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm, wherein the grain orientation of one 40mm × 40mm plane was {110}. <001> ; A 40mm × 40mm plane with a {110} crystal orientation of a high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 80%, the pressing deformation amount per pass is 10%, and the cold rolling temperature is less than 50℃; The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 500℃ for 10 minutes. The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 27.2 μm, and the main texture accounts for 52% of the target.
8. The method for preparing a highly textured high-purity copper target according to claim 1, characterized in that, include: High-purity single-crystal copper blocks were prepared by annealing polycrystalline copper blocks. The resulting high-purity single-crystal copper blocks had dimensions of 40mm × 40mm × 40mm, wherein the grain orientation of one 40mm × 40mm plane was {100}. <001> ; A 40mm × 40mm plane with a crystal orientation of {100} of high-purity single-crystal copper block is cold-rolled, with the cold-rolling direction parallel to the plane. <001> The cold rolling thinning amount is 95%, the pressing deformation amount per pass is 10%, and the cold rolling temperature is less than 50℃; The high-purity single-crystal copper block after cold rolling is quenched at a temperature of 300℃ for 20 minutes. The high-purity single-crystal copper block after quenching is polished to obtain a highly textured high-purity copper target. The grain size of the highly textured high-purity copper target is 29.3 μm, and the main texture accounts for 62% of the target.