A semiconductor laser wafer expansion machine and its usage method

Abstract

This invention discloses a semiconductor laser wafer expansion machine and its usage method. The expansion machine includes a main body, a fixed support, and a robotic arm. The robotic arm is vertically movable on the main body via the fixed support. A camera module is installed within the robotic arm, which moves to a first preset position to monitor the bonding effect between the wafer core unit and the expansion film. A vertically movable heating array module is installed within the main body, which moves to contact the expansion film for selective heating of unbonded areas, achieving complete bonding between the wafer core unit and the expansion film. This invention utilizes a camera module to observe the bonding between the expansion film and the core unit, and uses the heating array module within the main body to heat unbonded areas, ensuring complete bonding between the wafer core unit and the expansion film during the expansion process, thus guaranteeing the performance of the newly formed wafer disk.

Description

Technical Field

[0001] This invention relates to the field of wafer expander technology, and in particular to a semiconductor laser wafer expander and its usage method. Background Technology

[0002] Die expanders are widely used in the die expansion process of LED, small-to-medium power transistors, backlights, LEDs, integrated circuits, and some special semiconductor devices. They uniformly separate closely packed LED chips, allowing for better implantation into the workpiece. Utilizing the heat-induced plasticity of the LED film, a dual-cylinder control system evenly expands a single LED chip outwards, achieving the desired chip spacing before automatic shaping, resulting in a taut and deformation-free film. Featuring a constant temperature design and simple operation, it is an essential piece of LED packaging equipment.

[0003] However, current wafer expanders on the market have complex structures and limited functions. They can only perform wafer expander operations and cannot identify the bonding status between the wafer surface core unit and the expander film during the wafer expander process. When the bonding between the wafer surface core unit and the expander film is not complete, it will seriously affect the performance of the newly formed wafer disk, and may even render the wafer disk unusable.

[0004] Therefore, overcoming the shortcomings of the existing technology is an urgent problem to be solved in this technical field. Summary of the Invention

[0005] The technical problem to be solved by the present invention is how to ensure that the core unit on the wafer surface and the expansion film are completely bonded during the expansion process, thereby ensuring the performance of the new wafer disk formed by expansion.

[0006] The present invention adopts the following technical solution:

[0007] In a first aspect, the present invention proposes a semiconductor laser wafer expansion machine, including an expansion machine body, a fixed support and a robotic arm, wherein the robotic arm is mounted on the expansion machine body in a way that allows it to move up and down via the fixed support;

[0008] The robotic arm is equipped with a camera module, which is moved to a first preset position by the robotic arm to monitor the bonding effect between the wafer surface core unit and the die expansion film.

[0009] The main body of the die expander is equipped with a heating array module that can move up and down. The heating array module moves to fit with the die expander film so as to selectively heat the unfitted parts of the die expander film, thereby achieving complete bonding between the wafer surface core unit and the die expander film.

[0010] Preferably, the main body of the crystal expansion machine includes: a crystal expansion device and a control box;

[0011] The control box is provided with a hole that matches the crystal expansion device, and the hole penetrates the upper surface of the control box; the crystal expansion device is movable up and down and is installed in the hole of the control box. The crystal expansion device is moved up and down until it is on the same plane as the hole opening, so that the heating array module can heat the crystal expansion film placed on the upper surface of the control box.

[0012] Preferably, the die expansion device includes: a die expansion top plate, a heating array module, a die expansion inner ring, a lifting mechanism, and a cutting toothed ring, specifically:

[0013] The heating array module is located inside the expansion plate and is used to heat the expansion film that has not been effectively bonded.

[0014] The inner diameter of the expansion inner ring is equal to the radius of the expansion top plate. The expansion inner ring is sleeved on the expansion top plate, and the expansion inner ring and the upper surface of the expansion top plate are always on the same plane.

[0015] The cutting toothed ring is coaxially arranged with the expansion top plate. The inner diameter of the cutting toothed ring is greater than the outer diameter of the expansion inner ring by a first preset length. Furthermore, the cutting edge of the cutting toothed ring is always on the same plane as the upper surface of the expansion inner ring.

[0016] The lifting mechanism is connected to the lower surface of the expansion plate and is used to adjust the position of the expansion plate.

[0017] Preferably, the robotic arm includes: a pressure ring, a camera module, an expansion ring, an electro-hydraulic rod, and an outer ring pressure plate;

[0018] The pressure ring is movable up and down and connected to an electro-hydraulic rod. The electro-hydraulic rod drives the pressure ring to move until it abuts against the expanding film, so as to fix the expanding film.

[0019] The outer ring pressing plate is movable up and down and connected to the electric hydraulic rod. The lower surface of the outer ring pressing plate is provided with a mounting groove that is adapted to the expansion outer ring. The electric hydraulic rod drives the expansion outer ring installed in the mounting groove of the outer ring pressing plate to move until it engages with the expansion inner ring, so as to complete the expansion.

[0020] The camera module is located inside the outer ring pressure plate and is used to monitor the bonding effect between the wafer surface core unit and the expansion film.

[0021] Preferably, it also includes an ion fan, which is disposed on the upper surface of the control box, and the air outlet of the ion fan is aligned with the center of the crystal expansion film placed on the upper surface of the control box.

[0022] Preferably, the control box contains a control unit, and the lifting mechanism, camera module, heating array module, and electro-hydraulic rod are electrically connected to the control unit.

[0023] Preferably, the first preset length is greater than or equal to the thickness of the outer ring of the expanded crystal.

[0024] In a second aspect, based on the semiconductor laser wafer expander of the first aspect, the present invention proposes a method of using the semiconductor laser wafer expander, comprising: manually placing the expander inner ring into the expander device and placing the expander film in the expander film placement area on the upper surface of the control box;

[0025] After the expansion film is placed, the expansion outer ring is placed into the outer ring pressing plate. Then, the control unit controls the electric hydraulic rod to drive the pressing ring downward until it contacts the expansion film and presses the expansion film.

[0026] After the pressure film is pressed and the expanding film is tightened, the control unit controls the expanding device to move to the same plane as the upper surface of the control box and to abut against the expanding film.

[0027] Then, the camera module observes the bonding between the die-expanding film and the wafer surface core unit in the area. Based on the bonding situation, the control unit controls the heating array module to selectively heat and bridge the local area in the area, so as to achieve complete bonding between the die-expanding film and the wafer surface core unit in the area.

[0028] After the die-expanding film in the region is fully bonded to the core unit on the wafer surface, the control unit controls the electric hydraulic rod to drive the outer ring pressure plate downward, so that the outer die-expanding ring and the inner die-expanding ring are engaged to form a new wafer disk.

[0029] Preferably, the control unit controls the heating array module to selectively heat and seal within the area based on the adhesion condition, specifically including:

[0030] When there is a local area where there is no effective adhesion, the control unit controls the heating array module to heat and close the area where there is no effective adhesion, and to close the other areas without heating.

[0031] When the entire area is effectively bonded, the control unit controls the heating array module to not heat up.

[0032] Preferably, when there are areas that are not effectively bonded, the shortest dividing line is drawn using the area that is not effectively bonded as the point, and then the heating array module is controlled by the control unit to heat the area located on the dividing line, thereby creating a stretching effect to both sides, and finally achieving bonding of the unbonded areas.

[0033] This invention uses an electric hydraulic rod on a robotic arm to drive a pressure ring to press the expansion film tightly. Then, a control unit controls a lifting mechanism to move the expansion device to contact the expansion film. A camera module on the robotic arm observes the adhesion between the expansion film and the wafer surface core unit. A heating array module installed on the expansion device heats and repairs areas that are not effectively adhered. Once the expansion film and surface core unit are fully adhered throughout the expansion area, the expansion process begins. This invention solves the problem that incomplete adhesion between the expansion film and surface core unit during the expansion process can lead to performance degradation or failure in localized areas of the expansion film. Attached Figure Description

[0034] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments of the present invention will be briefly described below. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0035] Figure 1 This is a schematic diagram of the overall structure connection of a semiconductor laser wafer expansion machine provided in an embodiment of the present invention;

[0036] Figure 2 This is a schematic diagram of the structure of a control box for a semiconductor laser wafer expansion machine provided in an embodiment of the present invention;

[0037] Figure 3 This is a top view schematic diagram of the wafer expansion device of a semiconductor laser wafer expansion machine provided in an embodiment of the present invention;

[0038] Figure 4 This is a schematic diagram of the planar structure connection of the wafer expansion device of a semiconductor laser wafer expansion machine provided in an embodiment of the present invention;

[0039] Figure 5 This is a schematic diagram showing the structural connection of the camera module, the outer expansion ring, and the outer ring pressure plate of a semiconductor laser wafer expansion machine according to an embodiment of the present invention;

[0040] Figure 6 This is a schematic diagram of the ion fan installation position structure of a semiconductor laser wafer expansion machine provided in an embodiment of the present invention;

[0041] Figure 7 This is a circuit control schematic diagram of a semiconductor laser wafer expander control unit provided in an embodiment of the present invention;

[0042] Figure 8 This is a flowchart illustrating the usage method of a semiconductor laser wafer expander provided in an embodiment of the present invention;

[0043] Figure 9 This is a schematic diagram of a method for heating and bridging areas where the die-expanding film and the wafer surface core unit are not effectively bonded, provided by an embodiment of the present invention;

[0044] Figure 10 This is a schematic diagram of the internal structure of the heating array of a semiconductor laser wafer expansion machine provided in an embodiment of the present invention. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0046] In the description of this invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and do not require that this invention must be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0047] Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0048] Example 1:

[0049] Embodiment 1 of the present invention provides a semiconductor laser wafer expansion machine, including a wafer expansion machine body 1, a fixed support 2 and a robotic arm 3, wherein the robotic arm 3 is mounted on the wafer expansion machine body 1 and can be moved up and down via the fixed support 2;

[0050] The robotic arm 3 is equipped with a camera module 32. The camera module 32 is moved to a first preset position by the robotic arm 3 to monitor the bonding effect between the wafer surface core unit and the die expansion film.

[0051] The main body 1 of the die expander is provided with a heating array module 112 that can move up and down. The heating array module 112 moves to fit with the die expander film so as to selectively heat the unfit parts of the die expander film and achieve complete bonding between the wafer surface core unit and the die expander film.

[0052] like Figure 1 As shown, in order to display the complete diagram of the die expander, Figure 1The camera module 32 and heating array module 112 are not explicitly shown; their corresponding structures will be detailed in the subsequent structural description. Compared to existing technologies, this invention utilizes a camera module 32 mounted on the robotic arm 3 of the die expander. The robotic arm 3 moves up and down, moving the camera module 32 to the appropriate position. The camera module 32 observes the adhesion between the die expander film and the surface core unit. The heating array module 112, located within the die expander body 1, heats and seals any areas that are not effectively adhered. Based on feedback from the camera module 32, die expansion is performed only after the die expander film and surface core unit are fully and effectively adhered throughout the entire die expander area. By using the heating array module 112 to heat and seal areas that are not effectively adhered, this invention ensures complete adhesion between the wafer surface core unit and the die expander film during the die expander process, thereby guaranteeing the performance of the newly formed wafer disk.

[0053] To demonstrate the complete solution of the present invention, the specific details of the present invention will be described in detail below. Furthermore, the main body 1 of the crystal expansion machine includes: a crystal expansion device 11 and a control box 12.

[0054] The control box 12 is provided with a hole 121 that matches the die expansion device 11, and the hole 121 penetrates the upper surface of the control box 12; the die expansion device 11 is movable up and down and is disposed in the hole 121 of the control box 12. The die expansion device 11 is moved up and down until it is on the same plane as the opening of the hole 121, so that the heating array module 112 can heat the die expansion film placed on the upper surface of the control box 12.

[0055] like Figure 2 As shown, the main body 1 of the die expander of the present invention adopts a box structure, and the die expander device 11 is set inside the control box 12. Furthermore, a heating array module 112 is provided inside the die expander device 11. After the die expander device 11 moves up and down to abut against the die expander film, the areas where the die expander film and the surface core unit are not effectively bonded can be heated and sealed. It is worth noting that the present invention requires the heating array module 112 inside the die expander device 11 to heat and seal the die expander area; therefore, the position of the die expander device 11 should be coaxially aligned with the pressure ring 31.

[0056] Furthermore, the die expansion device 11 includes: a die expansion top plate 111, a heating array module 112, a die expansion inner ring 113, a lifting mechanism 114, and a cutting toothed ring 115, specifically:

[0057] The heating array module 112 is disposed inside the expansion top plate 111 and is used to heat the expansion film that is not effectively bonded.

[0058] The inner diameter of the inner ring 113 is equal to the radius of the top plate 111. The inner ring 113 is sleeved on the top plate 111, and the inner ring 113 and the upper surface of the top plate 111 are always on the same plane.

[0059] The cutting toothed ring 115 is coaxially arranged with the expansion top plate 111. The inner diameter of the cutting toothed ring 115 is greater than the outer diameter of the expansion inner ring 113 by a first preset length. Furthermore, the cutting edge of the cutting toothed ring 115 is always in the same plane as the upper surface of the expansion inner ring 113.

[0060] The lifting mechanism 114 is connected to the lower surface of the expansion plate 111 and is used to adjust the position of the expansion plate 111.

[0061] like Figure 3 and Figure 4 As shown, the die expansion process of this invention is actually the process of fastening the die expansion film with the surface core unit attached between the die expansion inner ring 113 and the die expansion outer ring 33. This process requires ensuring that the surface core unit and the die expansion film are completely attached, and the die expansion film in the generated new wafer disk needs to be spread out flat. After the die expansion is completed, a cutting tool is needed to cut off the excess die expansion film. In this invention, the pressure film ring 31 and the outer ring pressure film disk 35 are moved by the electric hydraulic rod 34 respectively. The pressure film ring 31 moves to abut against and press the die expansion film, avoiding the result of wrinkles and unevenness in the newly formed wafer disk caused by the internal stress of the die expansion film during the heating process. The new wafer disk of this invention is annular, and the corresponding cutting tooth ring 115 corresponds to the new wafer disk, making the outer cut of the manufactured new wafer disk more neat. The control unit 122 controls the lifting mechanism 114 to move the expansion plate 111 up and down, so that the expansion plate 111 moves to abut against the expansion film (actually, the expansion inner ring 113 inside the expansion plate 111 abuts against the expansion film). At this time, the cutting tooth ring 115 also abuts against the expansion film. Through the snapping process of the expansion outer ring 33, the expansion film moves downward and squeezes the expansion film, so that the expansion film and the cutting tooth ring 115 form an interaction force, thereby realizing the cutting tooth ring 115 cutting the expansion film. When the expansion tooth ring of the present invention cuts the expansion film, it does not require a motor to drive the cutting. The robotic arm 3 drives the expansion outer ring 33 to generate an interaction force between the expansion film and the expansion tooth ring to cut the expansion film. It is worth noting that, in order to make the inner ring 113 of the present invention fit onto the top plate 111 of the die expansion and always be in the same plane with the upper surface of the top plate 111, the present invention can provide a hook or support structure on the arc-shaped side of the top plate 111, or the back of the cutting tooth ring 115 (the end corresponding to the cutting edge) can be connected to the lower surface of the top plate 111 of the die expansion to form an insertable slot structure to support the inner ring 113 of the die expansion.

[0062] In addition, the present invention provides a heating array module 112 in the die expansion device 11. The control unit 122 can control the heating array module 112 to selectively heat the local area of ​​the die expansion film. The heating array module 112 heats and bridges the area where the die expansion film is not effectively attached to the wafer surface core unit. The wafer surface core unit is effectively attached to the die expansion film by heating, thus ensuring the performance of the fabricated wafer disk.

[0063] Furthermore, such as Figure 5 As shown, the robotic arm 3 includes: a pressure film ring 31, a camera module 32, an expansion outer ring 33, an electric hydraulic rod 34, and an outer ring pressure film plate 35;

[0064] The pressure ring 31 is movable up and down and connected to the electric hydraulic rod 34. The electric hydraulic rod 34 drives the pressure ring 31 to move until it abuts against the expansion film, so as to fix the expansion film.

[0065] The outer ring pressing plate 35 is movable up and down and connected to the electric hydraulic rod 34. The lower surface of the outer ring pressing plate 35 is provided with an installation groove that is adapted to the expansion outer ring 33. The electric hydraulic rod 34 drives the expansion outer ring 33 installed in the installation groove of the outer ring pressing plate 35 to move until it engages with the expansion inner ring 113, so as to complete the expansion.

[0066] The camera module 32 is located inside the outer ring pressure plate 35 and is used to monitor the bonding effect between the wafer surface core unit and the expansion film.

[0067] Furthermore, the first preset length is greater than or equal to the thickness of the outer ring 33 of the expanded crystal.

[0068] In this process, after the heating array module 112 heats and closes the unattached area, the camera module 32 on the robotic arm 3 is controlled by the control unit 122 to observe the closure. Once the wafer surface core unit and the wafer expansion film in the wafer expansion area are effectively attached, the electric hydraulic rod 34 of the robotic arm 3 drives the outer wafer expansion ring 33, which is installed in the mounting groove of the outer ring pressure plate 35, to move and engage with the inner wafer expansion ring 113 to form a new wafer disk. It is worth noting that the first preset length in this invention actually refers to an annular slot structure formed between the cutting tooth ring 115 and the inner wafer expansion ring 113, so that the outer wafer expansion ring 33 can be inserted into the slot structure after moving (achieving the engagement of the inner wafer expansion ring 113 and the outer wafer expansion ring 33). After the outer wafer expansion ring 33 and the inner wafer expansion ring 113 are engaged, the wafer expansion film between the inner wafer expansion ring 113 and the cutting tooth ring 115 will be sandwiched between the outer wafer expansion ring 33 and the inner wafer expansion ring 113. In the actual manufacturing process, the first preset length of the present invention is equal to the sum of the thickness of the expanded crystal film and the thickness of the expanded crystal outer ring 33.

[0069] Furthermore, such as Figure 6 As shown, to remove static electricity from the wafer disk formed during the manufacturing process, the present invention also includes an ion fan 4. The ion fan 4 is disposed on the upper surface of the control box 12, and the air outlet of the ion fan 4 is aligned with the center of the die-expanding film placed on the upper surface of the control box 12. The ion fan 4 can reduce the damage of static electricity to the wafer surface core units during the manufacturing process. It is worth noting that in the actual manufacturing process, a die-expanding film placement area is provided on the upper surface of the control box 12, and the center of the die-expanding film placement area is coaxially arranged with the center of the die-expanding device 11. The die-expanding area of ​​the newly formed wafer disk is actually the internal coverage area where the inner diameter of the die-expanding inner ring 113 abuts against the die-expanding film.

[0070] Furthermore, such as Figure 7 As shown, the control box 12 is equipped with a control unit 122, and the lifting mechanism 114, camera module 32, heating array module 112 and electric hydraulic rod 34 are electrically connected to the control unit 122.

[0071] This invention utilizes a control unit 122 within the control box 12. This control unit 122, based on feedback information from the camera module 32 and the heating array module 112, controls the electro-hydraulic rod 34 within the robotic arm 3 and the lifting mechanism 114 within the die expansion device 11 to move the corresponding structures up and down, thereby realizing the die expansion process of this invention. Notably, the control unit 122 can also statistically analyze the areas heated by the historical heating array module 112, further identifying unstable factors during wafer fabrication and providing feedback. Then, it conducts troubleshooting experiments on these factors, adjusting the die expansion device 11 to make the die expansion machine of this invention more stable.

[0072] This invention uses a camera module 32 to observe the bonding status of the wafer surface core unit with the expansion film. Then, a lifting mechanism 114 moves the expansion top plate 111 to contact the expansion film. The heating array module 112 set in the expansion top plate 111 selectively heats the expansion film, so that the expansion film is not heated and bonded to the wafer surface core unit area. This ensures the performance of the new wafer disk formed during the expansion process of this invention, and eliminates the need for a re-inspection process of the new wafer disk performance after expansion.

[0073] Example 2:

[0074] Based on the semiconductor laser wafer expander of Example 1, this invention also proposes a method for using the semiconductor laser wafer expander, such as... Figure 8 As shown, it includes:

[0075] Step 201: Manually place the inner ring 113 of the expansion device 11 into the expansion device 11, and place the expansion film in the expansion film placement area on the upper surface of the control box 12.

[0076] In this invention, the inner diameter of the inner expansion ring 113 is equal to the radius of the expansion top plate 111, and the inner expansion ring 113 is coaxially sleeved on the expansion top plate 111; after the expansion film of this invention is placed in the expansion film placement area, the expansion film should cover the holes 121 on the upper surface of the control box 12, so that the new wafer disk formed by the up and down movement of the expansion device 11 is covered with the expansion film.

[0077] Step 202: After the expansion film is placed, the expansion outer ring 33 is placed into the outer ring pressing plate 35. Then, the control unit 122 controls the electric hydraulic rod 34 to drive the pressing ring 31 downward to contact the expansion film and press the expansion film.

[0078] In this invention, after the expansion film is placed in the expansion film placement area, it needs to be pressed firmly to ensure that the expansion film is laid out flat. In this embodiment, a pressing ring 31 is used to press the expansion film placed in the expansion film placement area, ensuring that the expansion film in the new wafer disk formed by the expansion machine does not wrinkle. It is worth noting that, theoretically, the inner diameter of the pressing ring 31 should be greater than or equal to the outer diameter of the expansion outer ring 33 in order to move the expansion inner ring 113 through the electro-hydraulic rod 34 and realize the engagement of the expansion outer ring 33 and the expansion inner ring 113. Considering the smoothness of the production process, in this embodiment, the inner diameter of the pressing ring 31 is set to be greater than or equal to the outer diameter of the outer ring pressing disk 35. The electro-hydraulic rod 34 moves the expansion outer ring 33 in the outer ring pressing disk 35 to engage with the expansion inner ring 113, thus completing the expansion.

[0079] Step 203: After the pressure film is pressed and the expansion film is tightened, the control unit 122 controls the expansion device 11 to move to the same plane as the upper surface of the control box 12 and to abut against the expansion film.

[0080] This invention requires heating to close the unbonded areas, enabling effective bonding through heating. The corresponding heating array module 112 needs to be in direct or indirect contact with the expanding film (direct contact results in direct heating, indirect contact results in heating via heat transfer). The control unit 122 controls the lifting mechanism 114 within the expanding device 11 to move the expanding top plate 111 to contact the expanding film. The heating array module 112 within the expanding top plate 111 then heats the unbonded areas. Figure 9 As shown, the heating array module 112 of the present invention can selectively heat each heating distribution point in the area. That is to say, each heating distribution point is actually an independent heater. The selective heating purpose of the heating array module 112 of the present invention is achieved by controlling the switch of each heating distribution point through the control unit 122.

[0081] Step 204: Then, the camera module 32 observes the bonding between the expansion film and the wafer surface core unit in the area. The control unit 122 controls the heating array module 112 to selectively heat and bridge the local area in the area according to the bonding condition, so as to achieve complete bonding between the expansion film and the wafer surface core unit in the area.

[0082] When the heating array module 112 heats the unbonded area, the camera module 32 monitors and provides feedback on the bonding status of the heating and bonding process. When the camera module 32 detects that the surface core unit and the expansion film in the area are completely bonded, the heating array module 112 stops working and completes the heating and bonding operation.

[0083] Step 205: After the expansion film in the waiting area is fully bonded to the core unit on the wafer surface, the control unit 122 controls the electric hydraulic rod 34 to drive the outer ring pressure plate 35 downward, so that the expansion outer ring 33 and the expansion inner ring 113 are engaged to form a new wafer disk.

[0084] Specifically, when ensuring complete adhesion between the surface core unit and the expansion film within the region, the expansion outer ring 33 is engaged with the expansion inner ring 113 via the electro-hydraulic rod 34, forming a new wafer disk. It is worth noting that both the electro-hydraulic rod 34 and the lifting mechanism 114 are equipped with motors, which provide power for the movement of the electro-hydraulic rod 34 and the lifting mechanism 114.

[0085] Furthermore, the control unit 122 controls the heating array module 112 to selectively heat and seal within the area based on the adhesion condition, specifically including:

[0086] When there is a local area that is not effectively bonded, the control unit 122 controls the heating array module 112 to heat and seal the area that is not effectively bonded, and to seal the other areas without heating.

[0087] When the entire area is effectively bonded, the control unit 122 controls the heating array module 112 to stop heating.

[0088] The present invention monitors the unattached areas through the camera module 32 and feeds the feedback to the control unit 122. The control unit 122 controls the heating array module 112 to heat and close the unattached areas according to the feedback information. The areas that are effectively attached are not heated.

[0089] In addition, the present invention also has a preferred embodiment: when there is a local area that is not effectively bonded, the shortest dividing line is drawn using the area that is not effectively bonded as the point, and then the control unit 122 controls the heating array module 112 to heat the area located on the dividing line, thereby creating a stretching effect to both sides, and finally achieving bonding of the unbonded areas. Figure 9 As shown in the figure, the fitting line represents the shortest dividing line. The heating array module 112 is controlled by the control unit 122 to heat the area on the fitting line, so as to finally complete the bonding of the unbonded areas.

[0090] Compared to existing technologies, the robotic arm 3 of this invention identifies areas where the die-expanding film and the wafer surface core unit are not effectively bonded, and feeds back the acquired area location to the control unit 122. The control unit 122 regulates the corresponding lifting mechanism 114 to raise and lower the die-expanding top plate 111, and uses the heating array module 112 set in the die-expanding top plate 111 to heat and bridge the unbonded areas, ensuring that the die-expanding film and the wafer surface core unit in the die-expanding area can be completely bonded, thus ensuring the performance of the formed new wafer disk. In addition, this invention can also statistically analyze the areas heated by the historical heating array module 112, further analyze the unstable factors in the wafer fabrication process, and provide feedback; then, troubleshooting experiments are conducted on the factors, and the die-expanding device 11 of this invention is adjusted to make the die-expanding machine of this invention more stable.

[0091] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A semiconductor laser wafer expanding machine, characterized by, Including the main body of the crystal expansion machine (1), the fixed support (2) and the mechanical arm (3), the mechanical arm (3) is movably arranged on the main body of the crystal expansion machine (1) through the fixed support (2); The camera module (32) is arranged in the mechanical arm (3), and the camera module (32) is moved to the first preset position through the mechanical arm (3), so as to monitor the fitting effect of the wafer surface core unit and the crystal expansion film; The heating array module (112) movably arranged in the main body of the crystal expansion machine (1) is moved to be fitted with the crystal expansion film, so as to selectively heat the non-fitting part of the crystal expansion film, so as to realize the complete fitting of the wafer surface core unit and the crystal expansion film; The main body of the crystal expansion machine (1) comprises a crystal expansion device (11) and a control box (12); the control box (12) is provided with a hole (121) matched with the crystal expansion device (11), and the hole (121) penetrates the upper surface of the control box (12), and the crystal expansion device (11) moves up and down to be in the same plane with the hole (121); the crystal expansion device (11) comprises a crystal expansion inner ring (113); the control box (12) is provided with a control unit (122); The mechanical arm (3) comprises a film pressing ring (31), a camera module (32), a crystal expansion outer ring (33), an electric hydraulic rod (34) and an outer ring film pressing disc (35); the film pressing ring (31) is movably connected with the electric hydraulic rod (34), and the electric hydraulic rod (34) drives the film pressing ring (31) to move to abut against the crystal expansion film; the outer ring film pressing disc (35) is movably connected with the electric hydraulic rod (34), and the lower surface of the outer ring film pressing disc (35) is provided with a mounting groove matched with the crystal expansion outer ring (33); the electric hydraulic rod (34) drives the crystal expansion outer ring (33) mounted in the mounting groove of the outer ring film pressing disc (35) to move to be buckled with the crystal expansion inner ring (113), so as to complete the crystal expansion; the camera module (32) is arranged in the outer ring film pressing disc (35) and is used for monitoring the fitting effect of the wafer surface core unit and the crystal expansion film; Wherein, the fitting condition of the crystal expansion film and the wafer surface core unit in the observation area of the camera module (32) is observed, the control unit (122) controls the heating array module (112) to selectively heat the local area according to the fitting condition, and after the crystal expansion film and the wafer surface core unit in the area are completely fitted, the control unit (122) controls the electric hydraulic rod (34) to drive the outer ring film pressing disc (35) to move downward, so that the crystal expansion outer ring (33) is buckled with the crystal expansion inner ring (113), and a new wafer disc is formed.

2. The semiconductor laser wafer expanding machine according to claim 1, wherein, The crystal expansion device (11) comprises a crystal expansion top plate (111), a heating array module (112), a lifting mechanism (114) and a film cutting tooth ring (115), specifically: The heating array module (112) is arranged in the crystal expansion top plate (111) and is used for heating the crystal expansion film which is not effectively fitted; The inner diameter of the crystal expansion inner ring (113) is equal to the radius of the crystal expansion top plate (111), the crystal expansion inner ring (113) is sleeved on the crystal expansion top plate (111), and the crystal expansion inner ring (113) is always in the same plane as the upper surface of the crystal expansion top plate (111); The film cutting tooth ring (115) is coaxially arranged with the crystal expansion top plate (111), the inner diameter of the film cutting tooth ring (115) is greater than the outer diameter of the crystal expansion inner ring (113) by a first preset length, and the cutting edge of the film cutting tooth ring (115) is always in the same plane as the upper surface of the crystal expansion inner ring (113); The lifting mechanism (114) is connected with the lower surface of the crystal expansion top plate (111) and is used for adjusting the position of the crystal expansion top plate (111).

3. The semiconductor laser wafer expanding machine according to claim 1, wherein Further comprising an ion fan (4), the ion fan (4) is arranged on the upper surface of the control box (12), and the air outlet of the ion fan (4) is aligned with the center position of the crystal expansion film placed on the upper surface of the control box (12).

4. The semiconductor laser wafer expanding machine according to claim 2, wherein The lifting mechanism (114), the camera module (32), the heating array module (112) and the electric hydraulic rod (34) are respectively electrically connected with the control unit (122).

5. The semiconductor laser wafer expanding machine according to claim 2, wherein The first preset length is greater than or equal to the thickness of the crystal expansion outer ring (33).

6. A method of using a semiconductor laser wafer spreading machine, characterized by, The method is applied to the semiconductor laser wafer crystal expansion machine of any one of claims 1-5, comprising: Manually place the crystal expansion inner ring (113) into the crystal expansion device (11), and place the crystal expansion film in the crystal expansion film placement area on the upper surface of the control box (12); After the crystal expansion film is placed, place the crystal expansion outer ring (33) into the outer ring film pressing disc (35), and then control the electric hydraulic rod (34) to drive the film pressing ring (31) to move downward to abut against the crystal expansion film and press the crystal expansion film tightly by controlling the control unit (122); After the film pressing ring presses the crystal expansion film tightly, the control unit (122) controls the crystal expansion device (11) to move to the same plane as the upper surface of the control box (12) and abut against the crystal expansion film; Then observe the adhesion of the crystal expansion film and the wafer surface core unit in the observation area by the camera module (32), and control the heating array module (112) to selectively heat and heal the local area according to the adhesion by the control unit (122), so as to realize the complete adhesion of the crystal expansion film and the wafer surface core unit in the area; After the crystal expansion film and the wafer surface core unit in the area are completely adhered, the control unit (122) controls the electric hydraulic rod (34) to drive the outer ring film pressing disc (35) to move downward, so that the crystal expansion outer ring (33) is buckled with the crystal expansion inner ring (113) to form a new wafer disc.

7. The method of claim 6, wherein the method further comprises: The control unit (122) controls the heating array module (112) to selectively heat and heal the local area according to the adhesion, specifically comprising: When there is no effective adhesion in the local area, the control unit (122) controls the heating array module (112) to heat and heal the area without effective adhesion, and does not heat and heal other areas; When all the areas are effectively adhered, the control unit (122) controls the heating array module (112) not to heat.

8. The method of claim 6, wherein the method further comprises: Also included is that when there is a local no effective fit, the shortest dividing line is made with the area of no effective fit as a point, and then the control unit (122) controls the heating array module (112) to heat the area located on the dividing line, thereby forming the effect of stretching to both sides, and finally realizing the complete fit of the unattached area.

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