Directed friction device, method of building nanochannel, method of directed growth of nanowire array, and nanowire array and applications

Abstract

The application provides a directional rubbing device, a method for constructing a nanochannel, a method for directional growth of a nanowire array, and the nanowire array and application. The directional rubbing device can quickly form a nanoscale channel array with a certain orientation on an amorphous substrate, the area of the constructed channel array is controllable, and the width, density and depth of the channel can be controlled by adjusting the mesh number of the sandpaper and the number of the pressing blocks of the rubbing device; then the amorphous substrate is subjected to hydrophobic modification, and a MPc nanowire array with good distribution uniformity, good orientation and good stability can be grown on the substrate with the directional rubbing nanochannel array by using a PVD method; and the obtained nanowire array can be applied to an organic field effect transistor and a photodetector product.

Description

Technical Field

[0001] This invention relates to the field of semiconductor nanomaterial growth, specifically to a directional friction device, a method for constructing nanochannels, a method for directional growth of nanoarrays, and the nanoarrays and their applications. Background Technology

[0002] Oriented nanowires refer to nanowires that have a specific orientation on a planar or three-dimensional substrate, forming an ordered nanowire structure, using different methods and mechanisms. Because of their high morphological uniformity, positional accuracy, and spatial arrangement, oriented nanowires can be used to fabricate high-performance electronic, optoelectronic, and sensing devices.

[0003] Directional nanowire fabrication methods include top-down and bottom-up methods. The top-down method refers to starting from large-scale materials and creating the desired nanowire structure through cutting, etching, and carving. The bottom-up method refers to starting from atoms or molecules and constructing the desired nanowire structure through growth, deposition, and assembly. Vapor deposition is one of the commonly used methods for preparing nanowires. Nanowires grown by this method have high purity, high crystal quality, and other characteristics. Furthermore, the morphology, size, and quantity of nanowires can be controlled by changing parameters. Commonly used vapor deposition nanowire directional growth methods include: (1) Lattice epitaxial growth based on the gas-liquid-solid (VLS) mechanism, which utilizes the lattice orientation of the crystal substrate itself to achieve directional epitaxial growth of homogeneous or heterogeneous nanowires. (2) Trench confinement growth based on the VLS mechanism, which uses high-precision photolithography or electron beam etching to prepare micro-nano holes or trenches on the substrate surface, allowing nanowires to grow in a confined plane along the trench. These methods largely rely on the relationship between the crystal structure of the nanowires and the substrate. In the absence of a single-crystal substrate, the nanowires are typically grown and then assembled, a process that is not only more complex but also more prone to damaging the nanowires. Therefore, guided growth of nanowires on amorphous substrates presents a significant challenge. Common existing fabrication methods include:

[0004] (1) Patent document CN 113894018 A discloses a method of using a flexible PI film as a substrate to grow nanowires by hot embossing. The M-side sapphire surface after high-temperature annealing has a nanoscale channel array. It is used as a template and hot embossing is used to completely replicate the nanochannels onto the flexible PI substrate. Then, nanowires are grown on the substrate by PVD.

[0005] However, the hot embossing method is only applicable to flexible substrates and can only transfer sapphire channel arrays to flexible substrates but not to rigid substrates; the channel arrays constructed by the hot embossing method have relatively uniform sizes and cannot construct channel arrays of different widths or densities; the hot embossing method is time-consuming and the quality of the constructed channel array depends on the channel quality after sapphire annealing.

[0006] (2) Patent document CN 105470390 B discloses the construction of a nanowire field-effect transistor array using adhesive tape as a substrate. A PDMS template is prepared with grating assistance, and the nanowire array is prepared by PVD. The nanowire array is transferred to a sacrificial substrate with a sacrificial layer and gate, source, and drain electrodes deposited on the sacrificial layer using adhesive tape. Due to the greater adhesion between the adhesive tape and the sacrificial layer, the sacrificial layer separates from the sacrificial substrate. The adhesive tape is then immersed in an etching solution to remove the sacrificial layer, resulting in a nanowire field-effect transistor array based on adhesive tape.

[0007] This method is time-consuming, mainly due to the evaporation of the sacrificial layer; using tape to transfer the nanowires from the substrate can easily damage the nanowires, making them more prone to breakage and contamination; the tape itself has adhesive properties, making it more susceptible to contamination from the external environment; and the transfer of electrodes can easily lead to poor contact between the nanowires and the electrodes, affecting the performance of the field-effect transistor.

[0008] (3) In the literature [J].Acs Nano, 2019, 13(5): 5572-5582, amorphous SiO2 was used as the substrate to fabricate channel-grown nanowires by electron beam lithography: a layer of PMMA electron beam resist was spin-coated on SiO2 / Si, and after designing the pattern by electron beam lithography, the SiO2 was etched away in BOE, so that channel structures of different shapes and sizes could be prepared, including straight lines, sawtooth, sine waves and spirals, etc., and then nanowires of various materials were grown by PVD.

[0009] This method requires the use of electron beam lithography equipment, making the experiments complex, costly, and time-consuming. Although electron beam lithography can achieve extremely high resolution, its exposure speed is slow, resulting in low production efficiency. Furthermore, it is difficult to achieve high-precision alignment and overlay, making it unsuitable for large-scale manufacturing.

[0010] (4) Meanwhile, the literature in (3) also disclosed the method of fabricating channel-grown nanowires by nanoimprint lithography: first, a nanoimprint lithography template is fabricated using electron beam lithography, PMMA is spin-coated on the substrate, the nanoimprint template is placed face down on the PMMA layer and heated, and the pattern on the template can be transferred to the PMMA layer. SiO2 is etched away in a buffer oxide etching solution, and channel structures of different shapes and sizes can be prepared. Then, nanowires of various materials are grown using PVD.

[0011] This method uses instruments such as nanoimprint lithography, making the experiment complex, costly, and time-consuming. Moreover, the preparation of templates in nanoimprint lithography also requires the use of photolithography, electron beam exposure, and reactive ion etching techniques. Although the resolution is high, the process is complex, the template cost is high, and reactive ion etching causes significant damage and contamination to the surface, resulting in many defects in the prepared array patterns.

[0012] (5) In the literature [J]. Advanced Functional Materials, 2021, 31(47), quartz glass was used as the substrate to grow nanowires by using a polishing machine: the amorphous substrate was polished by a polishing machine and a polishing cloth with diamond nanoparticles to construct a scratched channel with a certain curvature, and then nanowires were grown by PVD.

[0013] This method uses polishing cloth with diamond particles to form channels, but it is time-consuming. The constructed channel array has curvature, and the grown nanocrystals also have curvature, resulting in a more complex crystal structure and defects. This may lead to problems such as increased resistance, reduced current density, or obstructed electron transport, thus affecting the electrical performance of the nanowires. Moreover, the curvature of the nanowires may pose certain difficulties when assembling with other materials or devices, requiring special techniques and methods to achieve effective contact and connection.

[0014] It is evident that existing methods all have various defects, such as complex processes, high costs, poor precision consistency, and poor nanowire quality, thus requiring urgent improvement. Summary of the Invention

[0015] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention proposes a method for rapidly constructing nanoscale channel arrays on the surface of amorphous substrates and for realizing the directional growth of nanowires.

[0016] One aspect of the present invention provides a directional friction device, comprising a main body and a plurality of pressure blocks. The main body is a hollow cavity, including a base and an outer wall extending upward around the base. The base is provided with a groove, the lower part of the outer wall is provided with an opening, and the upper part of the outer wall is provided with a slot. The pressure blocks are provided with buckles. The pressure blocks can be placed in the cavity of the main body by the cooperation of the buckles and the slots, and the bottom of the pressure blocks is close to the groove of the base.

[0017] By placing the substrate in the groove, placing the sandpaper on top of the substrate, and applying pressure with the pressure block, the sandpaper can be tightly adhered to the substrate. When the sandpaper is removed through the opening, grooves can be formed on the surface of the substrate through friction.

[0018] Preferably, the main body is cylindrical, and the main body of the pressure block is cylindrical.

[0019] A second aspect of the present invention provides a method for constructing nanochannels, the method being implemented using the aforementioned directional friction device, comprising the following steps:

[0020] 1) Place the amorphous substrate in the groove of the device and cover its upper surface with sandpaper;

[0021] 2) Place at least one pressure block inside the cavity of the main body, press the pressure blocks together, and press the lower surface of the lowest pressure block against the sandpaper;

[0022] 3) Quickly pull the sandpaper out through the opening to leave scratches on the surface of the amorphous substrate, forming nanochannels.

[0023] Using this device can better fix the substrate and prevent channel crossing caused by substrate sliding during friction, which would ultimately affect the growth direction of nanowires. By controlling the number of pressure blocks and changing the grit of the sandpaper, nanoscale channel arrays with different depths, widths, and densities and with a single orientation can be quickly constructed.

[0024] Preferably, the sandpaper has a mesh size of 5000-7000.

[0025] Preferably, the back of the amorphous substrate is covered with an anti-slip sticker.

[0026] A third aspect of the present invention also provides a method for directional growth of nanowire arrays, comprising the steps of:

[0027] 1) Nanochannels are constructed on an amorphous substrate using the method described above;

[0028] 2) Perform surface hydrophobic treatment on the amorphous substrate with nanochannels;

[0029] 3) A nanoarray is grown on the surface of a hydrophobically treated amorphous substrate by vapor deposition. Preferably, the nanoarray is an MPc (phthalocyanine metal complex) nanoarray, wherein M is Cu, Fe, Ni, Zn or Co.

[0030] In some embodiments, the amorphous substrate is an amorphous glass slide.

[0031] In some embodiments, in step 2), the hydrophobic modification treatment is achieved by immersing the amorphous glass slide treated by the plasma cleaner in an OTS solution. Octadecyltrichlorosilane (OTS) reacts with hydroxide ions (-OH) to generate polyoctadecylsiloxane (PODS), which can effectively reduce the surface energy of the glass slide substrate and significantly improve the affinity between the substrate surface and the organic molecular nanowires, thereby enabling the organic molecules to preferentially nucleate at the channels and eventually grow in an orderly manner along the channel direction. Preferably, the plasma cleaner treatment time is 160s, the power is 70w, the OTS solution is a 0.1% V / V OTS / n-hexane solution, and the immersion time is 2h.

[0032] In vapor deposition, the higher the temperature of the source heating zone, the greater the evaporation of the source material and the greater the density of the nanowire in-plane array; the lower the temperature of the substrate heating zone, the lower the substrate temperature, the greater the amount of organic molecules deposited on the substrate, and the greater the density of the nanowire in-plane array; by keeping the nitrogen flow rate constant, the density of the nanowire in-plane array can be controlled by adjusting the distance between the evaporation source and the substrate.

[0033] In some embodiments, step 3) is performed in a dual-temperature zone tube furnace; the distance between the source heating zone and the substrate heating zone is 16-18 cm, the temperature of the source heating zone is 440-460 °C, the temperature of the substrate heating zone is 240 °C, the carrier gas is N2, the volumetric flow rate is 100 sccm, the pressure is 14 mbar, and the growth time is 135 min.

[0034] In a fourth aspect, the present invention also provides an MPc nanoarray prepared by the above-described method for directional growth of nanoarrays.

[0035] A fifth aspect of the present invention also provides the application of the aforementioned MPc nanoarray in organic semiconductor photodetectors and field-effect transistor products.

[0036] Compared to existing methods, this invention designs a directional friction device that enables the rapid formation of a nanoscale channel array with specific orientation on a substrate. The area of ​​the constructed channel array is controllable and can be used for large-scale manufacturing. Furthermore, the width, density, and depth of the channels can be controlled by adjusting the mesh size of the sandpaper and the number of pressure blocks. Subsequently, the amorphous substrate is hydrophobically modified, and an MPC nanoarray with good uniformity, orientation, and stability can be grown on the substrate with the directional friction nanochannel array using a PVD method. The resulting nanoarray can be applied to organic field-effect transistors and photodetectors, and it is compatible with existing micro / nano fabrication processes, which is beneficial for the large-scale production and on-chip integration of semiconductor micro / nano devices. Attached Figure Description

[0037] Figure 1This is a structural diagram of the directional friction device in Example 1;

[0038] Figure 2 This is a flowchart of the nanoarray growth process according to an embodiment of the present invention;

[0039] Figure 3 This is a schematic diagram of the dual-temperature tube furnace structure used in the PVD method of this invention.

[0040] Figure 4 These are groove images on the surface of a glass slide substrate after directional rubbing, according to an embodiment of the present invention. The left image is an optical microscope image magnified 50 times, and the right image is a scanning electron microscope image magnified 5000 times.

[0041] Figure 5 These are atomic force microscopy images of a glass slide substrate after directional rubbing according to an embodiment of the present invention. The left image is an atomic force microscopy microstructure of the channel array on the surface of the glass slide after directional rubbing, and the right image is a channel depth distribution along the line in the left image.

[0042] Figure 6 These are optical microscope images of CuPc nanowires from Example 2 and Comparative Example 1, where the left image is an optical microscope image of CuPc nanowires grown on a glass slide substrate without directional rubbing treatment in Comparative Example 1, and the right image is an optical microscope image of CuPc nanowires from Example 2.

[0043] Figure 7 These are optical microscope images of CuPc nanowires from Example 3;

[0044] Figure 8 These are scanning electron microscope images of CuPc nanowires from Example 3;

[0045] Figure 9 These are optical microscope images of the NiPc nanowires from Example 4;

[0046] Figure 10 These are optical microscope images of the CoPc nanowires from Example 5;

[0047] Figure 11 These are optical microscope images of ZnPc nanowires from Example 6;

[0048] Figure 12 This is an optical microscope image of the FePc nanowires in Example 7. Detailed Implementation

[0049] In the description of this invention, unless otherwise explicitly defined, terms such as heating, cleaning, and weighing should be interpreted broadly. Those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0050] In the description of this invention, references to terms such as "some embodiments" and "examples" indicate that the specific methods or materials described in connection with that embodiment or example are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the specific methods and materials described may be combined in any suitable manner in one or more embodiments or examples.

[0051] The directional friction device of the present invention includes a main body and several pressure blocks. The main body is a hollow cavity, including a base and an outer wall extending upward around the base. The base is provided with a groove, the lower part of the outer wall is provided with an opening, and the upper part of the outer wall is provided with a slot. The pressure blocks are provided with buckles. The pressure blocks can be placed in the cavity of the main body by the cooperation of the buckles and the slots, and the bottom of the pressure blocks is close to the groove of the base. In this way, the substrate is placed in the groove, the sandpaper is placed on the substrate, and the pressure blocks apply pressure, which can make the sandpaper and the substrate stick tightly together. When the sandpaper is removed, grooves can be formed on the surface of the substrate by friction.

[0052] The grooves are primarily for securing the substrate to be rubbed to create the grooves, while the openings at the bottom of the outer wall facilitate the placement and removal of the substrate and sandpaper. Applying pressure to the substrate with the pressure block allows for directional rubbing to form grooves on the substrate surface when the sandpaper is quickly removed. When the pressure block is placed inside the main body, the centers of the grooves and the pressure block are both located on the central axis of the main body, resulting in more even pressure application.

[0053] The shape of the groove can be set according to the shape of the base. The main cavity can be cylindrical, square, etc., and the shape of the pressure block can be designed according to the shape of the cavity. The slot is mainly for easy placement and removal of the pressure block. The size of the opening should be suitable for operation. Preferably, the main body is cylindrical, and the main body of the pressure block is cylindrical.

[0054] The method for constructing nanochannels in this invention is mainly based on a directional friction device and includes the following steps:

[0055] 1) Place the amorphous substrate in the groove of the device and cover its upper surface with sandpaper;

[0056] 2) Place at least one pressure block inside the cavity of the main body, press the pressure blocks together, and press the lower surface of the lowest pressure block against the sandpaper;

[0057] 3) Quickly pull the sandpaper out through the opening to leave scratches on the surface of the amorphous substrate, forming nanochannels.

[0058] Using this device can better fix the substrate and prevent channel crossing caused by substrate sliding during friction, which would ultimately affect the growth direction of nanowires. By controlling the number of pressure blocks and changing the grit of the sandpaper, nanoscale channel arrays with different depths, widths, and densities and with a single orientation can be quickly constructed.

[0059] In the embodiments of the present invention, the amorphous substrate refers to a solid material substrate without a crystal structure, whose atoms or molecules do not have a regular geometric arrangement or periodicity, such as amorphous glass slides.

[0060] Preferably, the sandpaper has a mesh size of 5000-7000, which can yield a nanowire array with a more suitable width.

[0061] Preferably, the back of the amorphous substrate is covered with an anti-slip sticker to prevent the substrate from moving during the removal of the sandpaper, thus avoiding the intersection of the grooves.

[0062] The method for directional growth of nanowire arrays of the present invention is mainly based on the above-mentioned method for constructing nanochannels, further combined with hydrophobic modification of the substrate surface, and includes the following steps:

[0063] 1) Nanochannels are constructed on an amorphous substrate using the method described above;

[0064] 2) Perform surface hydrophobic treatment on the amorphous substrate with nanochannels;

[0065] 3) A nanoarray is grown on the surface of a hydrophobically treated amorphous substrate using vapor deposition. The nanoarray is an MPc nanoarray, where M is Cu, Fe, Zn, Ni or Co.

[0066] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to specific embodiments and accompanying drawings, but this does not constitute a limitation on the scope of protection of the present invention.

[0067] Unless otherwise specified, all reagents used in the following examples are commercially available; and all methods used in the following examples are conventional methods.

[0068] The experimental instruments used in the following examples are: a TF1200-60 tube furnace from Shanghai Weixing Furnace Industry Co., Ltd.; quartz tubes with outer diameter, inner diameter, and length of 35mm, 29mm, and 1500mm, respectively; a D08-4E flow display and a D07-19B mass flow controller from Beijing Qixing Huachuang Flowmeter Co., Ltd.; a ME103E / 02 electronic balance from Mettler Toledo Instruments (Shanghai) Co., Ltd.; and a BILON6-180 ultrasonic cleaner from Shanghai Bilang Instrument Manufacturing Co., Ltd.

[0069] Example 1: Directional Friction Device

[0070] like Figure 1 As shown, an embodiment of the directional friction device of the present invention includes a main body 1 and several pressure blocks 2. The main body 1 is a cylindrical cavity, comprising a circular base 11 and an outer wall 12 extending upward around the base. The base has a square groove 13. The lower part of the outer wall has an opening 15, and the upper two sides of the outer wall have slots 14. The pressure blocks 2 are cylindrical in shape and have buckles 21 on both sides. By engaging the buckles with the slots 14, the pressure blocks 2 can be fixed in the cavity of the main body. The pressure blocks 2 are made of iron.

[0071] Place the substrate in the groove 13, place the sandpaper on the substrate, and apply pressure with the pressure block 2. This will make the sandpaper adhere tightly to the substrate. When the sandpaper is removed through the opening 15, grooves can be formed on the surface of the substrate through friction.

[0072] Example 2

[0073] like Figure 2 As shown, a method for directional growth of nanowire arrays includes the following steps:

[0074] 1. Constructing an amorphous glass substrate with nanochannels

[0075] 1.1 Use a diamond pen to cut the amorphous glass slide into 1.5×1.5cm pieces. 2 The shape is placed in the middle of the friction device of Example 1, at a depth of 1.5 × 1.5 cm. 2 Place 6000-grit sandpaper on the glass slide in the groove, and finally place the pressure block to apply pressure.

[0076] 1.2 After quickly removing the sandpaper, take out the glass slide substrate to obtain an amorphous glass slide substrate with nanochannels.

[0077] Figure 4 These are images of the grooves on the surface of a glass slide substrate after directional rubbing. The left image is an optical microscope image magnified 50 times, and the right image is a scanning electron microscope image magnified 5000 times. Figure 5 These are atomic force microscopy (AFM) images of the glass slide substrate surface after directional rubbing. The left image shows the AFM microstructure of the channel array on the glass slide surface after directional rubbing, while the right image shows the channel depth distribution along the line in the left image. It can be seen that this directional rubbing device can rapidly form parallel nanochannels on the surface of an amorphous glass slide, with a channel height of 2-8 nm.

[0078] 2. Hydrophobic modification

[0079] 2.1 Clean the glass slides after directional rubbing treatment in an ultrasonic cleaner in the order of acetone, alcohol, deionized water and alcohol for 10 minutes each, and then dry them with a nitrogen gun.

[0080] 2.2 Place the glass slide substrate into a culture dish and then place it in a plasma cleaner for 160 seconds.

[0081] 2.3 The glass slide substrates treated by the plasma cleaner were placed in a solution containing 10 μl OTS and 10 ml n-hexane for hydrophobic treatment for 2 hours.

[0082] 2.4 After removing the slide substrate from the OTS solution, rinse it in the following order: acetone, alcohol, deionized water, and alcohol, and then dry it with a nitrogen gun.

[0083] 3PVD-grown nanowire array

[0084] 3.1 such as Figure 3 As shown, 6 mg of CuPc powder was placed in a quartz boat and placed in the source heating zone and the substrate heating zone of a dual-temperature zone tube furnace, respectively, with a distance of 18 cm between them.

[0085] 3.2 After locking the air inlet and outlet of the tubular furnace with enamel rings at both ends, turn on the air pump to evacuate the air. When the air pressure inside the tubular furnace reaches 6 mbar, nitrogen is introduced for flushing. Repeat this process twice.

[0086] 3.3 Set the flow meter to a flow rate of 100 sccm and the gas pressure to 14 mbar. Set the source heating zone temperature of the dual-temperature tube furnace to 440℃, the substrate heating zone temperature to 240℃, and the growth time to 135 minutes to begin growing nanowires.

[0087] 3.4 After growth, the nanowires were cooled to room temperature in a nitrogen atmosphere and removed, resulting in a parallel array of CuPc nanowires on a glass slide substrate. The optical microscope image is shown below. Figure 6 As shown in the middle right figure.

[0088] Example 3

[0089] The only difference from Example 2 is that in step 3, the distance between the source heating area and the base heating area is 16cm; otherwise, it is the same as Example 1.

[0090] The obtained CuPc nanowire optical microscope images are as follows: Figure 7 As shown, the scanning electron microscope image is as follows: Figure 8 As shown. (Through) Figure 6 and Figure 7 The comparison shows that the distance between the source heating region and the substrate heating region is smaller, that is, the distance between the source material and the glass slide substrate is smaller, resulting in denser nanowires.

[0091] Example 4

[0092] Steps 1 and 2 are the same as in Example 1.

[0093] Step 33: PVD growth of nanowire arrays

[0094] 3.1 Take 6 mg of NiPc powder and place it in a quartz boat. Place it and the hydrophobically treated substrate in the source heating zone and the substrate heating zone of a dual-temperature zone tube furnace, respectively. The distance between the two is 18 cm.

[0095] 3.2 After locking the air inlet and outlet of the tubular furnace with enamel rings at both ends, turn on the air pump to evacuate the air. When the air pressure inside the tubular furnace reaches 6 mbar, nitrogen is introduced for flushing. Repeat this process twice.

[0096] 3.3 Set the flow meter to a flow rate of 100 sccm and the gas pressure to 14 mbar. Set the source heating zone temperature of the dual-temperature tube furnace to 440℃, the substrate heating zone temperature to 240℃, and the growth time to 135 minutes to begin growing nanowires.

[0097] 3.4 After growth, the nanowires were cooled to room temperature in a nitrogen atmosphere and removed, resulting in a parallel array of NiPc nanowires on a glass slide substrate. The optical microscope image is shown below. Figure 9 As shown.

[0098] Example 5

[0099] Steps 1 and 2 are the same as in Example 1.

[0100] Step 33: PVD growth of nanowire arrays

[0101] 3.1 Take 6 mg of CoPc powder and place it in a quartz boat. Place it and the hydrophobically treated substrate in the source heating zone and the substrate heating zone of a dual-temperature zone tube furnace, respectively. The distance between the two is 18 cm.

[0102] 3.2 After locking the air inlet and outlet of the tubular furnace with enamel rings at both ends, turn on the air pump to evacuate the air. When the air pressure inside the tubular furnace reaches 6 mbar, nitrogen is introduced for flushing. Repeat this process twice.

[0103] 3.3 Set the flow meter to a flow rate of 100 sccm and the gas pressure to 14 mbar. Set the source heating zone temperature of the dual-temperature tube furnace to 450℃, the substrate heating zone temperature to 240℃, and the growth time to 135 minutes to begin growing nanowires.

[0104] 3.4 After growth, the nanowires were cooled to room temperature in a nitrogen atmosphere and removed, resulting in a parallel array of CoPc nanowires on a glass slide substrate. The optical microscope image is shown below. Figure 10 As shown.

[0105] Example 6

[0106] Steps 1 and 2 are the same as in Example 1.

[0107] Step 33: PVD growth of nanowire arrays

[0108] 3.1 Take 6 mg of ZnPc powder and place it in a quartz boat. Place it and the hydrophobically treated substrate in the source heating zone and the substrate heating zone of a dual-temperature zone tube furnace, respectively. The distance between the two is 18 cm.

[0109] 3.2 After locking the air inlet and outlet of the tubular furnace with enamel rings at both ends, turn on the air pump to evacuate the air. When the air pressure inside the tubular furnace reaches 6 mbar, nitrogen is introduced for flushing. Repeat this process twice.

[0110] 3.3 Set the flow meter to a flow rate of 100 sccm and the gas pressure to 14 mbar. Set the source heating zone temperature of the dual-temperature tube furnace to 460℃, the substrate heating zone temperature to 240℃, and the growth time to 135 minutes to begin growing nanowires.

[0111] 3.4 After growth, the nanowires were cooled to room temperature in a nitrogen atmosphere and removed, resulting in a parallel array of ZnPc nanowires on a glass slide substrate. The optical microscope image is shown below. Figure 11 As shown.

[0112] Example 7

[0113] Steps 1 and 2 are the same as in Example 1.

[0114] Step 33: PVD growth of nanowire arrays

[0115] 3.1 Take 6 mg of FePc powder and place it in a quartz boat. Place it and the hydrophobically treated substrate in the source heating zone and the substrate heating zone of a dual-temperature zone tube furnace, respectively. The distance between the two is 18 cm.

[0116] 3.2 After locking the air inlet and outlet of the tubular furnace with enamel rings at both ends, turn on the air pump to evacuate the air. When the air pressure inside the tubular furnace reaches 6 mbar, nitrogen is introduced for flushing. Repeat this process twice.

[0117] 3.3 Set the flow meter to a flow rate of 100 sccm and the gas pressure to 14 mbar. Set the source heating zone temperature of the dual-temperature tube furnace to 450℃, the substrate heating zone temperature to 240℃, and the growth time to 135 minutes to begin growing nanowires.

[0118] 3.4 After growth, the nanowires were cooled to room temperature in a nitrogen atmosphere and removed, resulting in a parallel array of FePc nanowires on a glass slide substrate. The optical microscope image is shown below. Figure 12 As shown.

[0119] Comparative Example 1

[0120] The difference from Example 2 is that step 1 is missing, but the rest are the same.

[0121] Optical microscopy images of CuPc nanowires grown on un-directionally rubbed glass slides are shown below. Figure 6 As shown in the left image, by comparing it with Example 2 in the right image, it can be seen that only on the substrate treated with directional friction can parallel and ordered nanowire arrays be obtained, while the nanowire arrays grown on the substrate without directional friction treatment are disordered.

[0122] In summary, it can be seen that the directional friction device designed in this invention can rapidly form a nanoscale channel array with a certain orientation on an amorphous substrate. The area of ​​the constructed channel array is controllable, and the width, density, and depth of the channels can be controlled by adjusting the mesh size of the sandpaper and the number of pressure blocks of the friction device. Furthermore, the amorphous substrate can be hydrophobically modified, and an MPC nanoarray with good uniformity, good orientation, and good stability can be grown on the substrate with the directional friction nanochannel array using the PVD method. Moreover, by adjusting the PVD parameters, a denser and more regular nanoarray can be obtained. The obtained nanoarray can be applied to organic field-effect transistors and photodetector products, and the nanoarray is compatible with existing micro-nano fabrication processes, which is beneficial for the large-scale production and on-chip integration of semiconductor micro-nano devices.

[0123] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be noted that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for constructing nanochannels, characterized in that, The method is implemented using a directional friction device, which includes a main body and several pressure blocks. The main body is a hollow cavity, including a base and an outer wall extending upward around the base. The base has a groove, the lower part of the outer wall has an opening, and the upper part of the outer wall has a slot. The pressure blocks have buckles. The pressure blocks can be placed in the cavity of the main body through the cooperation of the buckles and the slots, and the bottom of the pressure blocks is close to the groove of the base. The method includes the following steps. 1) Place the amorphous substrate in the groove of the device and cover its upper surface with sandpaper; 2) Place at least one pressure block inside the cavity of the main body, press the pressure blocks together, and press the lower surface of the lowest pressure block against the sandpaper; 3) Quickly pull the sandpaper out through the opening to leave scratches on the surface of the amorphous substrate, forming nanochannels.

2. The method for constructing nanochannels according to claim 1, characterized in that, The main body of the friction device is cylindrical, and the main body of the pressure block is cylindrical.

3. The method for constructing nanochannels according to claim 1, characterized in that, The sandpaper has a mesh size of 5000-7000.

4. A method for directional growth of nanowire arrays, characterized in that, Including the following steps: 1) Constructing nanochannels on an amorphous substrate using the method described in any one of claims 1-3; 2) Perform surface hydrophobic treatment on the amorphous substrate with nanochannels; 3) A nanoarray is grown on the surface of a hydrophobically treated amorphous substrate using vapor deposition. The nanoarray is an MPc nanoarray, where M is Cu, Fe, Ni, Zn or Co.

5. The method for directional growth of nanowire arrays according to claim 4, characterized in that, The amorphous substrate is an amorphous glass slide.

6. The method for directional growth of nanowire arrays according to claim 5, characterized in that, In step 2), the hydrophobic modification treatment is achieved by immersing the amorphous glass slide, which has been treated by a plasma cleaner, in an OTS solution.

7. The method for directional growth of nanowire arrays according to claim 6, characterized in that, The plasma cleaner has a processing time of 160 seconds and a power of 70W. The OTS solution is a 0.1% V / V OTS / n-hexane solution, and the soaking time is 2 hours.

8. The method for directional growth of nanowire arrays according to claim 5, characterized in that, Step 3) is carried out in a dual-temperature zone tubular furnace; the distance between the source heating zone and the substrate heating zone is 16-18 cm, the temperature of the source heating zone is 440-460 ℃, the temperature of the substrate heating zone is 240 ℃, the carrier gas is N2, the volumetric flow rate is 100 sccm, the pressure is 14 mbar, and the growth time is 135 min.

9. An MPc nanoarray prepared by the method of directional growth of nanoarrays as described in any one of claims 4-8.

10. The application of the MPc nanoarray as described in claim 9 in organic semiconductor photodetectors and field-effect transistor products.

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