An active on-chip double-to-single conversion circuit P-waveband signal transmission method

Abstract

The application discloses a kind of active chip in dual-to-single circuit P wave band signal transmission method, comprising: obtaining P wave band signal transmission state data;Bias voltage data is obtained, combined with P wave band signal transmission common-mode noise, even harmonic, electrostatic leakage data, generates different bias voltage measurement, the bias influence optimization result of dividing resistance value;P wave band signal unit time signal loss value is obtained, combined with P wave band signal transmission common-mode noise, even harmonic, electrostatic leakage data, power voltage, the bias influence optimization of dividing resistance value is carried out to different P wave band signal unit time signal loss calculation model, generates different P wave band signal unit time signal loss calculation model power voltage, the bias influence optimization of dividing resistance value, combined with different P wave band signal unit time signal loss calculation model power voltage, the bias influence optimization of dividing resistance value is carried out circuit adjustment control, solves the technical problem of low transmission efficiency of P wave band signal.

Description

Technical Field

[0001] This invention relates to the field of P-band signal transmission in circuits, and more particularly to an active on-chip dual-to-single circuit P-band signal transmission method. Background Technology

[0002] As a crucial direction for the miniaturization of phased array radar and military communication transceivers, designing RF chips from the system level down has become an inevitable requirement. Guided by the principles of "electronic chipification and RF integration," an architecture based on microsystem technology was established. By incorporating modular, multi-functional chips designed with system specifications in mind, redundancy in specifications and performance design can be avoided in modular integration using discrete devices and single-function chips. This maximizes system advantages at the chip level, reduces integration complexity, and provides effective support for integrated RF systems combining communication, radar, and electronic warfare.

[0003] CMOS technology has garnered increasing attention in the field of radio frequency (RF) chips due to its high integration with digital circuits and relatively low cost after mass production. The P-band can be used directly as an RF frequency and also as an intermediate frequency in high-frequency superheterodyne transceivers. Practical system applications have a significant demand for P-band RF transceiver chips, demonstrating their versatility. Therefore, research on P-band RF transceiver chips has broad application prospects and high research value. The quality of P-band signal transmission is directly related to the generation of the P-band signal. However, the control of the transmission environment still mainly relies on the experience of the operators. This method of controlling the transmission environment of P-band signals can lead to inaccuracies and affect the transmission of P-band signals. Furthermore, the transmission environment data required for P-band signal transmission changes in real time, and existing experience-based environmental control methods cannot accurately grasp the crop's transmission period, resulting in a lag in the control of the crop's transmission environment.

[0004] Therefore, there is an urgent need for a more intelligent and scientific way to transmit P-band signals and improve the transmission efficiency of P-band signals. Summary of the Invention

[0005] This application provides an active on-chip dual-to-single circuit P-band signal transmission method, aiming to solve the technical problems of low power supply voltage and voltage divider resistor value transmission efficiency of P-band signals in the prior art.

[0006] In view of the above problems, this application provides an active on-chip dual-to-single circuit P-band signal transmission method.

[0007] The initial aspect disclosed in this application provides an active on-chip dual-to-single circuit P-band signal transmission method, wherein the method includes: when a preset transmission node is met, acquiring P-band signal transmission status data through a local oscillator single-to-dual amplifier, wherein the P-band signal transmission status data includes P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data; acquiring bias voltage data; and using the bias voltage data and the P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data, optimizing the bias effects of different bias voltages on power supply voltage and voltage divider resistor values, generating an optimized result for different bias voltage measurement and voltage divider resistor value bias effects. The process involves: obtaining the unit-time signal loss value of the P-band signal; using the unit-time signal loss value of the P-band signal and the data on common-mode noise, even harmonics, and electrostatic leakage of the P-band signal transmission, optimizing the power supply voltage and voltage divider resistor value bias effects on different P-band signal unit-time signal loss calculation models, and generating optimization results for the power supply voltage and voltage divider resistor value bias effects on different P-band signal unit-time signal loss calculation models; and performing circuit adjustment and control based on the optimization results of the different bias voltage measurements and voltage divider resistor value bias effects on the different P-band signal unit-time signal loss calculation models.

[0008] Another aspect of this application discloses an active on-chip dual-to-single circuit P-band signal transmission method, wherein the method comprises: a P-band signal transmission data acquisition module, used to acquire P-band signal transmission status data through a local oscillator single-to-dual amplifier when a preset transmission node is met, wherein the P-band signal transmission status data includes P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data; a bias voltage data acquisition module, used to acquire bias voltage data; and an initial bias influence optimization module, used to optimize the bias influence of power supply voltage and voltage divider resistor values ​​for different bias voltages using the bias voltage data and the P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data, generating different bias voltage measurement and voltage divider resistor value bias influence. The system includes: a signal loss value acquisition module for acquiring the unit-time signal loss value of the P-band signal; an updated bias influence optimization module for optimizing the power supply voltage and voltage divider resistor values ​​of different P-band signal unit-time signal loss calculation models using the unit-time signal loss value of the P-band signal and the common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal transmission; and a circuit adjustment control module for performing circuit adjustment control based on the optimized results of the different bias voltage measurements and voltage divider resistor values ​​and the optimized results of the different P-band signal unit-time signal loss calculation models.

[0009] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0010] By employing a method that, when a preset transmission node is met, single-to-dual local oscillator amplifiers are used to acquire P-band signal transmission status data; bias voltage data is acquired; based on the bias voltage data and P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data, the influence of power supply voltage and voltage divider resistor values ​​on bias is optimized for different bias voltages, generating measurement results for different bias voltages and optimization results for the influence of voltage divider resistor values ​​on bias; the signal loss value per unit time of the P-band signal is acquired; based on the signal loss value per unit time of the P-band signal and the P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data, the signal loss per unit time of different P-band signals is calculated. The model optimizes the effects of power supply voltage and voltage divider resistor values ​​bias, generating optimization results for power supply voltage and voltage divider resistor values ​​bias in different P-band signal unit time signal loss calculation models. Combining these optimization results with circuit adjustment control, the model achieves the technical effect of improving the transmission efficiency of P-band signals by optimizing the bias voltage and voltage divider resistor values ​​bias in the P-band signal unit time signal loss calculation model, based on common-mode noise, even harmonics, and electrostatic leakage in radio frequency P-band signal transmission. Attached Figure Description

[0011] Figure 1 This is a flowchart of the method of the present invention;

[0012] Figure 2 This is a diagram showing the composition of the method operation module of the present invention. Detailed Implementation

[0013] This application provides an active on-chip dual-to-single circuit P-band signal transmission method, which solves the technical problem of low transmission efficiency of P-band signal power supply voltage and voltage divider resistor value. It achieves the technical effect of optimizing the bias voltage and the bias effect of voltage divider resistor value bias on the calculation model of P-band signal unit time signal loss per unit time based on common mode noise, even harmonics and electrostatic leakage in radio frequency P-band signal transmission, thereby improving the transmission efficiency of P-band signal power supply voltage and voltage divider resistor value.

[0014] Figure 1 As shown, this application embodiment provides an active on-chip dual-to-single-circuit P-band signal transmission method, wherein the method includes:

[0015] T1. When the preset transmission node is met, the P-band signal transmission status data is obtained through a local oscillator single-to-dual amplifier. The P-band signal transmission status data includes P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data.

[0016] T2. Obtain bias voltage data;

[0017] Specifically, in an RF environment, the circuit adjustment and control method for frequency conversion is implemented. When a preset transmission node is met (the preset transmission node includes a bias voltage point and an impedance generation time point, wherein the bias voltage point corresponds to the impedance generation time point, and the preset transmission node is met: the current time point is between any set of bias voltage points and impedance generation time points), the P-band signal transmission status data is obtained through a local oscillator single-to-dual amplifier. The P-band signal transmission status data includes P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data (removing the relevant data of empty capacitors confirms the P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data; limiting note: there is no situation where the P-band signal voltage divider resistor for transmission efficiency is changed between a set of bias voltage points and impedance generation time points; if it is necessary to change the P-band signal voltage divider resistor for transmission efficiency, it must be performed after power is off); different bias voltages exist inside the RF, and bias voltage data is obtained. The bias voltage data includes the spatial voltage divider resistor values ​​of different bias voltages inside the RF, providing data support for the transmission of RF parasitic capacitance of P-band signals.

[0018] T3. Using the bias voltage data and the common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal transmission, optimize the bias effects of power supply voltage and voltage divider resistor values ​​for different bias voltages, and generate optimization results for the bias effects of different bias voltage measurement and voltage divider resistor values.

[0019] Based on the bias voltage data, the radio frequency is divided to obtain different negative temperature slopes, wherein the different negative temperature slopes correspond to the bias voltage data;

[0020] Based on the different negative temperature slopes, the transmission progress of common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal is analyzed to obtain the transmission progress results of common-mode noise, even harmonics, and electrostatic leakage of the P-band signal.

[0021] The transmission efficiency of the P-band signal is evaluated by statistically analyzing the common-mode noise, even harmonics, and electrostatic leakage transmission progress results, and the distribution area of ​​the P-band signal with different transmission efficiencies is obtained.

[0022] Based on the distribution areas of P-band signals with different transmission efficiencies, the influence of power supply voltage and voltage divider resistor values ​​on the bias effects of different bias voltages is optimized, generating the optimized results of the bias effects of different bias voltage measurements and voltage divider resistor values.

[0023] Specifically, different bias voltages are adjusted, and the bias voltage data and the common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal transmission are used to optimize the bias effects of different bias voltages on power supply voltage and voltage divider resistor values. The optimization results of the bias effects of different bias voltage measurement and voltage divider resistor values ​​are generated. Specifically, the radio frequency is divided according to the clear and loud coverage range of the bias voltage, with the bias voltage data as the center, and different negative temperature slopes are obtained. The different negative temperature slopes correspond to the bias voltage data.

[0024] Within the same radio frequency unit, the transmission progress of the P-band signal is analyzed for common-mode noise, even harmonics, and electrostatic leakage. The transmission progress is analyzed from bottom to top according to the different negative temperature slopes (the transmission progress is measured in P-band signals with each stagnant transmission efficiency as the smallest unit), and the transmission progress results of the P-band signal for common-mode noise, even harmonics, and electrostatic leakage are obtained.

[0025] The transmission efficiency of the P-band signal is evaluated by statistically analyzing the transmission progress results of common-mode noise, even harmonics, and electrostatic leakage. The distribution areas of P-band signals with different transmission efficiencies are obtained (the distribution areas of P-band signals with different transmission efficiencies correspond to the transmission progress results of common-mode noise, even harmonics, and electrostatic leakage of the P-band signal). This provides technical support for optimizing the bias effects of power supply voltage and voltage divider resistor values ​​under different bias voltages.

[0026] Set the frequency band required for radio frequency parasitic capacitance resonance per unit time;

[0027] Based on the distribution areas of P-band signals with different transmission efficiencies and the bias voltage data, obtain different P-band signal spacing data;

[0028] Input the different P-band signal spacing data into the frequency band required for the unit time of the radio frequency parasitic capacitance resonance to obtain different radio frequency parasitic capacitance resonance change values.

[0029] Based on the different RF parasitic capacitance resonance variation values ​​and the optimal range of RF parasitic capacitance resonance, the bias effects of power supply voltage and voltage divider resistor values ​​on the different bias voltages are optimized, generating the optimization results of the different bias voltage measurement and voltage divider resistor value bias effects.

[0030] Specifically, to ensure that the range of influence on P-band signal spacing fully covers all P-band signals of varying transmission efficiencies in the radio frequency (RF) spectrum, the influence of power supply voltage and voltage divider resistor values ​​on different bias voltages is optimized based on the distribution areas of P-band signals with different transmission efficiencies. This generates optimization results for the different bias voltage measurements and voltage divider resistor values. Specifically, based on the characteristics of the bias voltage, the operator sets the frequency band required for RF parasitic capacitance resonance per unit time; calculates the relative P-band signal spacing between the distribution areas of P-band signals with different transmission efficiencies and the bias voltage data, obtaining different P-band signal spacing data. This P-band signal spacing data represents the relative P-band signal spacing between the receiving voltage divider resistor and the sound source voltage divider resistor; using this different P-band signal spacing data as limiting data, it is sequentially input into the frequency band required for RF parasitic capacitance resonance per unit time to obtain different RF parasitic capacitance resonance variation values. These different RF parasitic capacitance resonance variation values ​​correspond to the different P-band signal spacing data.

[0031] Based on the different RF parasitic capacitance resonance variation values ​​and the optimal range of RF parasitic capacitance resonance (which includes the lower limit and upper limit of the RF parasitic capacitance resonance of the bias voltage), the percentage of each different RF parasitic capacitance resonance variation value within the optimal range of the RF parasitic capacitance resonance is determined. The bias effects of the power supply voltage and voltage divider resistor values ​​are then optimized according to these percentages, generating the optimization results for the bias effects of different bias voltages and voltage divider resistor values. These optimization results correspond to the different bias voltages. The number of rotations of the RF parasitic capacitance resonance adjustment knob can be used to provide support for high-efficiency optimization of the bias effects of power supply voltage and voltage divider resistor values ​​for different bias voltages.

[0032] T4. Obtain the signal loss value per unit time for the P-band signal;

[0033] T5. Using the signal loss value per unit time of the P-band signal and the common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal transmission, optimize the power supply voltage and voltage divider resistor value bias effects on the signal loss calculation model per unit time of different P-band signals, and generate the optimization results of the power supply voltage and voltage divider resistor value bias effects on the signal loss calculation model per unit time of different P-band signals.

[0034] Based on the signal loss value per unit time of the P-band signal, the radio frequency is divided to obtain different negative temperature slopes;

[0035] Based on the different negative temperature slopes, the transmission progress of the P-band signal transmission common mode noise, even harmonics, and electrostatic leakage data is analyzed to obtain the P-band signal transmission progress results with different negative temperature slopes and transmission efficiency.

[0036] Based on the transmission progress results of P-band signals with different negative temperature slopes, the power supply voltage and voltage divider resistor value bias effects are optimized for the signal loss calculation models per unit time of different P-band signals, generating the optimization results of the power supply voltage and voltage divider resistor value bias effects for the signal loss calculation models per unit time of different P-band signals.

[0037] Specifically, different P-band signal loss per unit time calculation models exist within the radio frequency (RF) unit. The RF unit time signal loss value is obtained, including the spatial voltage divider resistance values ​​of the different P-band signal loss per unit time calculation models, providing data support for P-band signal transmission. Using the P-band signal loss per unit time value and data on common-mode noise, even harmonics, and electrostatic leakage in P-band signal transmission, the RF unit time signal loss calculation models are optimized for the influence of power supply voltage and voltage divider resistance value bias. This generates optimization results for the influence of power supply voltage and voltage divider resistance value bias on the different P-band signal loss per unit time calculation models. Specifically, this includes dividing the RF frequency according to the clearly identifiable coverage area based on the P-band signal loss per unit time value, using the P-band signal loss per unit time value as the center, and obtaining different negative temperature slopes, which correspond to the P-band signal loss per unit time value.

[0038] Within the same radio frequency unit, the transmission progress of the P-band signal is analyzed for common-mode noise, even harmonics, and electrostatic leakage data. The transmission progress is analyzed from bottom to top according to different negative temperature slopes to obtain the P-band signal transmission progress results with different negative temperature slopes (the P-band signal transmission progress results with different negative temperature slopes include the P-band signal loss with different negative temperature slopes).

[0039] Based on the transmission progress results of P-band signals with different negative temperature slopes, the power supply voltage and voltage divider resistor value bias effects are optimized for the unit time signal loss calculation models of different P-band signals. This generates optimization results for the power supply voltage and voltage divider resistor value bias effects of the unit time signal loss calculation models of different P-band signals. These optimization results can be optimization results for the unit time signal loss speed bias effect, brightness bias effect, or color contrast bias effect of the P-band signal. This provides technical support for optimizing the power supply voltage and voltage divider resistor value bias effects of the unit time signal loss calculation models of different P-band signals.

[0040] Obtain the power supply voltage and voltage divider resistor value of the P-band signal signal loss per unit time, wherein the power supply voltage and voltage divider resistor value of the P-band signal signal loss per unit time include the output impedance calculation signal;

[0041] Based on the transmission efficiency of P-band signals with different negative temperature slopes, the signal loss calculation models per unit time of P-band signals with different preset output impedances are selected from the different P-band signal unit time signal loss calculation models.

[0042] Based on the statistical calculation model of the signal loss per unit time of the P-band signal with different preset output impedance values, the optimization results of the power supply voltage and voltage divider resistor value bias of the calculation model of the signal loss per unit time of the P-band signal are generated.

[0043] Specifically, generally speaking, in areas where there are no P-band signals of varying transmission efficiency, there is no need to calculate the output impedance of the P-band signal unit-time signal loss model. In areas where there are P-band signals of varying transmission efficiency, output impedance statistics are used. This is the result of optimizing the power supply voltage and voltage divider resistor bias effects of the unit-time signal loss calculation model for different P-band signals. To ensure that the negative temperature slope fully covers the fall-off capacitance of all P-band signals of varying transmission efficiency in the radio frequency, based on the transmission progress results of the P-band signals of varying transmission efficiency at different negative temperature slopes, the power supply voltage and voltage divider resistor bias effects of the unit-time signal loss calculation model for different P-band signals are optimized. This generates the optimized results of the power supply voltage and voltage divider resistor bias effects of the unit-time signal loss calculation model for different P-band signals, which also includes:

[0044] When the different P-band signal unit time signal loss calculation models are powered on (powered on and the P-band signal unit time signal loss calculation model can operate normally; if the P-band signal unit time signal loss calculation model fails, after the P-band signal stops transmitting at a certain efficiency level, a capacitor replacement prompt should be issued at the initial time; after the P-band signal stops transmitting at a certain efficiency level and no capacitor replacement prompt is received, the capacitor state is changed from idle to a state where the P-band signal stops transmitting at a certain efficiency level), the power supply voltage and voltage divider resistor value of the P-band signal unit time signal loss are obtained. The power supply voltage and voltage divider resistor value of the P-band signal unit time signal loss include the output impedance calculation signal.

[0045] Based on the transmission efficiency of P-band signals at different negative temperature slopes and the transmission progress results, different P-band signal loss calculation models per unit time are selected from the different P-band signal unit time signal loss calculation models. These models with different preset output impedances are the P-band signal unit time signal loss calculation models that receive the output impedance calculation signal. Based on the output impedance calculation signal, after statistically analyzing the different preset output impedance models for P-band signal unit time signal loss calculation, the optimization results of the power supply voltage and voltage divider resistor bias effects of the different P-band signal unit time signal loss calculation models are generated. The optimization results of the power supply voltage and voltage divider resistor value bias effects in the power loss calculation model can be the optimization results of the signal loss speed bias effect, brightness bias effect, and color contrast bias effect of P-band signals per unit time. (That is, it is necessary to first output the signal loss calculation model of P-band signals per unit time within the statistical limit of the output impedance, and then optimize the power supply voltage and voltage divider resistor value bias effects according to the different P-band signals per unit time signal loss calculation models. If there is no P-band signal with transmission efficiency, it is not necessary to output the P-band signal per unit time signal loss calculation model with statistical output impedance.) This reduces unnecessary P-band signal per unit time signal loss costs.

[0046] T6. Based on the optimization results of the bias effect of different bias voltage measurement and voltage divider resistor values, and the optimization results of the bias effect of power supply voltage and voltage divider resistor values ​​in the calculation model of signal loss per unit time for different P-band signals, the circuit is adjusted and controlled.

[0047] When circuit adjustment control fails to be performed using the optimization results of the bias effect of different bias voltage measurement, voltage divider resistor value bias, and the power supply voltage and voltage divider resistor value bias effect optimization results of the different P-band signal unit time signal loss calculation models, the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model are obtained.

[0048] The calculation models for the control failure bias voltage and the unit time signal loss of the control failure P-band signal are recalculated.

[0049] When recalculation fails, a frequency conversion transmission abnormality signal is generated;

[0050] The frequency conversion transmission abnormality signal is sent to the frequency conversion terminal.

[0051] Specifically, based on the optimization results of the bias effects of different bias voltage measurements, voltage divider resistor values, and the optimization results of the bias effects of different P-band signal unit-time signal loss calculation models, the circuit adjustment control is performed on the bias voltage and the P-band signal unit-time signal loss calculation model within the radio frequency, providing support for circuit adjustment control. This also includes: when circuit adjustment control fails based on the optimization results of the bias effects of different bias voltage measurements, voltage divider resistor values, and the optimization results of the bias effects of different P-band signal unit-time signal loss calculation models, the following steps are taken: First, the control failure bias voltage and the control failure P-band signal unit-time signal loss calculation model are obtained. Then, the control failure bias voltage and the control failure P-band signal unit-time signal loss calculation model are recalculated. If the recalculation is repeated twice and fails, a frequency conversion transmission abnormality signal is generated (the frequency conversion transmission abnormality signal includes a P-band signal unit-time signal loss calculation model fault and a bias voltage fault). Finally, the frequency conversion transmission abnormality signal is sent to the frequency conversion terminal to provide timely support for relevant technical personnel to perform method operation and maintenance.

[0052] When recalculation fails, the frequency conversion negative temperature slope is obtained based on the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model.

[0053] The voltage divider resistor variation is indicated based on the frequency conversion negative temperature slope to measure the transmission efficiency of the P-band signal.

[0054] Specifically, if the loop is recalculated twice and fails again, it indicates a potential fault in the P-band signal unit-time signal loss calculation model or bias voltage. Based on the control failure bias voltage and the control failure P-band signal unit-time signal loss calculation model, a frequency conversion negative temperature slope is obtained. This frequency conversion negative temperature slope indicates the area where P-band signal unit-time signal loss service and RF parasitic capacitance irrigation service cannot be provided. Based on the frequency conversion negative temperature slope, a voltage divider resistor change prompt is issued for P-band signals with varying transmission efficiency (a capacitor replacement prompt should be issued for P-band signals with stagnant transmission efficiency at the initial time), providing technical support to ensure P-band signal unit-time signal loss service and RF parasitic capacitance irrigation service.

[0055] In summary, the active on-chip dual-to-single-circuit P-band signal transmission method provided in this application has the following technical effects:

[0056] 1. Acquire P-band signal transmission status data; acquire bias voltage data, and combine it with P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data to optimize the bias effects of power supply voltage and voltage divider resistor values ​​for different bias voltages, generating optimized results for different bias voltage measurement and voltage divider resistor value bias effects; acquire P-band signal unit-time signal loss value, and combine it with P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data to optimize the power supply voltage and voltage divider resistor value bias effects for different P-band signal unit-time signal loss calculation models, generating optimized results for different P-band signal unit-time signal loss calculation models. This application provides an active on-chip dual-to-single circuit P-band signal transmission method. It optimizes the bias voltage and voltage divider resistor values ​​in the power supply voltage and voltage loss calculation model for different P-band signals, and then adjusts and controls the circuit accordingly. This method achieves the technical effect of improving the transmission efficiency of P-band signals by optimizing the bias voltage and voltage divider resistor values ​​in the calculation model of P-band signal unit-time signal loss based on common-mode noise, even harmonics, and electrostatic leakage during P-band signal transmission.

[0057] 2. By acquiring the power supply voltage and voltage divider resistor values ​​for the unit time signal loss of P-band signals; and by selecting different P-band signal unit time signal loss calculation models from different P-band signal unit time signal loss calculation models based on the transmission efficiency of P-band signals at different negative temperature slopes, statistically analyzing the P-band signal unit time signal loss calculation models with different preset output impedance values, and generating different P-band signal unit time signal loss calculation models, the bias effect of power supply voltage and voltage divider resistor values ​​is optimized, thereby reducing unnecessary P-band signal unit time signal loss costs.

[0058] Based on the same inventive concept as the active on-chip dual-to-single-circuit P-band signal transmission method in the foregoing embodiments, such as Figure 2 As shown, this application embodiment provides an active on-chip dual-to-single-circuit P-band signal transmission method, wherein the method includes the following steps:

[0059] The P-band signal transmission data acquisition module is used to acquire P-band signal transmission status data through a local oscillator single-to-dual amplifier when a preset transmission node is met. The P-band signal transmission status data includes P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data.

[0060] Bias voltage data acquisition module, used to acquire bias voltage data;

[0061] The initial bias effect optimization module is used to optimize the bias effect of different bias voltages by using the bias voltage data and the common-mode noise, even harmonics and electrostatic leakage data of the P-band signal transmission, and to generate the bias effect optimization results of different bias voltage measurement and voltage divider resistance values.

[0062] The signal loss value acquisition module is used to acquire the signal loss value per unit time of the P-band signal;

[0063] The offset impact optimization module is updated to utilize the unit time signal loss value of the P-band signal and the common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal transmission to optimize the offset impact of power supply voltage and voltage divider resistor values ​​on different P-band signal unit time signal loss calculation models, and generate the power supply voltage and voltage divider resistor value offset impact optimization results for different P-band signal unit time signal loss calculation models.

[0064] The circuit adjustment control module is used to perform circuit adjustment control based on the optimization results of the bias effect of different bias voltage measurements and voltage divider resistor values, and the optimization results of the bias effect of power supply voltage and voltage divider resistor values ​​in the calculation model of signal loss per unit time for different P-band signals.

[0065] Furthermore, the method operation includes:

[0066] The initial negative temperature slope acquisition module is used to divide the radio frequency according to the bias voltage data and acquire different negative temperature slopes, wherein the different negative temperature slopes correspond to the bias voltage data;

[0067] The initial transmission progress analysis module is used to analyze the transmission progress of the P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data based on the different negative temperature slopes, and to obtain the transmission progress results of the P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage.

[0068] The transmission efficiency evaluation module is used to statistically evaluate the transmission efficiency of the P-band signal by analyzing the common-mode noise, even harmonics, and electrostatic leakage transmission progress results, and to obtain the distribution area of ​​the P-band signal with different transmission efficiencies.

[0069] The final bias influence optimization module is used to optimize the bias influence of power supply voltage and voltage divider resistor value on different bias voltages according to the distribution area of ​​P-band signals with different transmission efficiencies, and generate the optimization results of the bias influence of different bias voltage measurement and voltage divider resistor value.

[0070] Furthermore, the method operation includes:

[0071] The resonant frequency band setting module is used to set the frequency band required for RF parasitic capacitance resonance per unit time.

[0072] The P-band signal spacing data acquisition module is used to acquire different P-band signal spacing data based on the distribution areas of P-band signals with different transmission efficiencies and the bias voltage data.

[0073] The radio frequency parasitic capacitance resonance change value acquisition module is used to input the different P-band signal spacing data into the frequency band required for the radio frequency parasitic capacitance resonance per unit time, and acquire different radio frequency parasitic capacitance resonance change values.

[0074] Furthermore, the method operation includes:

[0075] The dynamic negative temperature slope acquisition module is used to divide the radio frequency based on the signal loss value per unit time of the P-band signal and acquire different negative temperature slopes.

[0076] The dynamic transmission progress analysis module is used to analyze the transmission progress of common-mode noise, even-order harmonics, and electrostatic leakage data of the P-band signal based on different negative temperature slopes, and obtain the transmission progress results of the P-band signal with different transmission efficiencies at different negative temperature slopes; based on the transmission progress results of the P-band signal with different transmission efficiencies at different negative temperature slopes, the module optimizes the power supply voltage and voltage divider resistor value bias effects of the unit time signal loss calculation model of the different P-band signals, and generates the optimization results of the power supply voltage and voltage divider resistor value bias effects of the unit time signal loss calculation model of the different P-band signals.

[0077] Furthermore, the method operation includes:

[0078] A module for acquiring the power supply voltage and voltage divider resistance values ​​of P-band signal unit-time signal loss is used to acquire the power supply voltage and voltage divider resistance values ​​of P-band signal unit-time signal loss, wherein the power supply voltage and voltage divider resistance values ​​of P-band signal unit-time signal loss include the output impedance calculation signal; a model calculation module is used to select different preset output impedance values ​​from the different P-band signal unit-time signal loss calculation models based on the P-band signal transmission progress results with different negative temperature slope transmission efficiencies; a signal loss calculation module is used to generate the power supply voltage and voltage divider resistance value bias influence optimization results of the different P-band signal unit-time signal loss calculation models based on the different preset output impedance values.

[0079] Furthermore, the method operation includes:

[0080] The control failure method operation acquisition module is used to acquire the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model when the circuit adjustment control fails due to the optimization results of the bias effect of the different bias voltage measurement, the bias effect of the voltage divider resistor value and the optimization results of the bias effect of the power supply voltage and the bias effect of the different P-band signal unit time signal loss calculation model.

[0081] The recalculation module is used to recalculate the control failure bias voltage and the unit time signal loss calculation model of the control failure P-band signal; the frequency conversion transmission abnormal signal generation module is used to generate a frequency conversion transmission abnormal signal when the recalculation fails; the frequency conversion transmission abnormal signal sending module is used to send the frequency conversion transmission abnormal signal to the frequency conversion terminal.

[0082] Furthermore, the method operation includes:

[0083] The variable frequency negative temperature slope acquisition module is used to acquire the variable frequency negative temperature slope based on the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model when recalculation fails.

[0084] The voltage divider resistor variation prompt module is used to provide a voltage divider resistor variation prompt based on the frequency conversion negative temperature slope for the transmission efficiency of the P-band signal.

[0085] Furthermore, it is obvious that those skilled in the art can make various modifications and variations to this application without departing from the scope of this application. Thus, if such modifications and variations fall within the scope of this application and its equivalents, this application intends to include such modifications and variations.

[0086] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various equivalent changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A method for active on-chip dual-to-single-circuit P-band signal transmission, characterized in that, include: The P-band signal transmission status data is obtained by using a local oscillator single-to-dual amplifier. The P-band signal transmission status data includes P-band signal transmission common-mode noise, even harmonics, and electrostatic leakage data. Obtain bias voltage data; using the bias voltage data and the common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal transmission, optimize the bias effect of power supply voltage and voltage divider resistor values ​​for different bias voltages, and generate optimization results of the bias effect of different bias voltage measurement and voltage divider resistor values. Obtain the signal loss value per unit time of the P-band signal; using the signal loss value per unit time of the P-band signal and the common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal transmission, optimize the power supply voltage and voltage divider resistor value bias effects on different P-band signal unit time signal loss calculation models, and generate optimization results of the power supply voltage and voltage divider resistor value bias effects on different P-band signal unit time signal loss calculation models; Based on the optimization results of the bias effect of different bias voltage measurements and voltage divider resistor values, and the optimization results of the bias effect of power supply voltage and voltage divider resistor values ​​in the calculation model of signal loss per unit time for different P-band signals, the circuit is adjusted and controlled.

2. The active on-chip dual-to-single-circuit P-band signal transmission method as described in claim 1, characterized in that, Using the bias voltage data and the common-mode noise, even-order harmonics, and electrostatic leakage data of the P-band signal transmission, the effects of different bias voltages on power supply voltage and voltage divider resistor values ​​are optimized, generating optimized results for different bias voltage metering and voltage divider resistor value bias effects, including: Based on the bias voltage data, the radio frequency is divided to obtain different negative temperature slopes, wherein the different negative temperature slopes correspond to the bias voltage data; Based on the different negative temperature slopes, the transmission progress of common-mode noise, even harmonics, and electrostatic leakage data of the P-band signal is analyzed to obtain the transmission progress results of common-mode noise, even harmonics, and electrostatic leakage of the P-band signal. The transmission efficiency is evaluated by statistically analyzing the common-mode noise, even harmonics, and electrostatic leakage transmission progress results of the P-band signal transmission, and the distribution areas of P-band signals with different transmission efficiencies are obtained. Based on the distribution areas of P-band signals with different transmission efficiencies, the bias effects of power supply voltage and voltage divider resistor values ​​are optimized for different bias voltages, and the optimization results of the bias effects of different bias voltages and voltage divider resistor values ​​are generated.

3. The active on-chip dual-to-single-circuit P-band signal transmission method as described in claim 2, characterized in that, Based on the distribution areas of P-band signals with different transmission efficiencies, the effects of power supply voltage and voltage divider resistor values ​​on the bias effects of different bias voltages are optimized, generating the optimized results of the metering of different bias voltages and the effects of voltage divider resistor values ​​on the bias effects, including: Set the frequency band required for radio frequency parasitic capacitance resonance per unit time; obtain different P-band signal spacing data based on the distribution areas of P-band signals with different transmission efficiencies and the bias voltage data; The different P-band signal spacing data are input into the frequency band required for the unit time of the radio frequency parasitic capacitance resonance to obtain different radio frequency parasitic capacitance resonance variation values; based on the different radio frequency parasitic capacitance resonance variation values ​​and the optimal range value of the radio frequency parasitic capacitance resonance, the bias effects of the power supply voltage and voltage divider resistor value are optimized for the different bias voltages, and the optimization results of the bias effects of the different bias voltage measurement and voltage divider resistor value are generated.

4. The active on-chip dual-to-single-circuit P-band signal transmission method as described in claim 1, characterized in that, Using the unit-time signal loss value of the P-band signal and the common-mode noise, even-order harmonics, and electrostatic leakage data of the P-band signal transmission, the influence of power supply voltage and voltage divider resistor value bias is optimized on different P-band signal unit-time signal loss calculation models. The optimized results of the power supply voltage and voltage divider resistor value bias influence on different P-band signal unit-time signal loss calculation models are generated, including: Based on the signal loss value per unit time of the P-band signal, the radio frequency is divided to obtain different negative temperature slopes; based on the different negative temperature slopes, the transmission progress of the P-band signal common mode noise, even harmonics, and electrostatic leakage data is analyzed to obtain the transmission progress results of the P-band signal with different negative temperature slopes. Based on the transmission progress results of P-band signals with different negative temperature slopes, the power supply voltage and voltage divider resistor value bias effects are optimized for the signal loss calculation models per unit time of different P-band signals, generating the optimization results of the power supply voltage and voltage divider resistor value bias effects for the signal loss calculation models per unit time of different P-band signals.

5. The active on-chip dual-to-single-circuit P-band signal transmission method as described in claim 4, characterized in that, Based on the transmission progress results of P-band signals with different negative temperature slopes, the signal loss calculation models per unit time for different P-band signals are optimized for the influence of power supply voltage and voltage divider resistor bias. This generates the optimized results for the influence of power supply voltage and voltage divider resistor bias on the signal loss calculation models per unit time for different P-band signals, including: Obtain the power supply voltage and voltage divider resistance value of the P-band signal unit time signal loss, wherein the power supply voltage and voltage divider resistance value of the P-band signal unit time signal loss include the output impedance calculation signal; based on the P-band signal transmission progress results of different negative temperature slope transmission efficiencies, select different preset output impedance values ​​from the different P-band signal unit time signal loss calculation models to statistically analyze the P-band signal unit time signal loss calculation models. Based on the statistical calculation model of the signal loss per unit time of the P-band signal with different preset output impedance values, the optimization results of the power supply voltage and voltage divider resistor value bias of the calculation model of the signal loss per unit time of the P-band signal are generated.

6. The active on-chip dual-to-single-circuit P-band signal transmission method as described in claim 1, characterized in that, Also includes: When circuit adjustment control fails to be performed using the optimization results of the bias effect of different bias voltage measurement, voltage divider resistor value bias, and the power supply voltage and voltage divider resistor value bias effect optimization results of the different P-band signal unit time signal loss calculation models, the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model are obtained. The calculation models for the control failure bias voltage and the unit-time signal loss of the control failure P-band signal are recalculated. When recalculation fails, a frequency conversion transmission abnormality signal is generated; The frequency conversion transmission abnormality signal is sent to the frequency conversion terminal.

7. The active on-chip dual-to-single-circuit P-band signal transmission method as described in claim 6, characterized in that, Also includes: When recalculation fails, the frequency conversion negative temperature slope is obtained based on the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model; the voltage divider resistor change is indicated for the transmission efficiency of the P-band signal based on the frequency conversion negative temperature slope.

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